CN1396659A - 包括纳米管电子源的数据存储装置 - Google Patents

包括纳米管电子源的数据存储装置 Download PDF

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Publication number
CN1396659A
CN1396659A CN02141131A CN02141131A CN1396659A CN 1396659 A CN1396659 A CN 1396659A CN 02141131 A CN02141131 A CN 02141131A CN 02141131 A CN02141131 A CN 02141131A CN 1396659 A CN1396659 A CN 1396659A
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CN
China
Prior art keywords
nanotube
storage device
data storage
electron source
array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN02141131A
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English (en)
Chinese (zh)
Inventor
J·H·尼克尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of CN1396659A publication Critical patent/CN1396659A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B20/00—Signal processing not specific to the method of recording or reproducing; Circuits therefor
    • G11B20/10—Digital recording or reproducing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1409—Heads
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1418—Disposition or mounting of heads or record carriers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/943—Information storage or retrieval using nanostructure

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Semiconductor Memories (AREA)
  • Carbon And Carbon Compounds (AREA)
CN02141131A 2001-07-06 2002-07-05 包括纳米管电子源的数据存储装置 Pending CN1396659A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/900,662 US6928042B2 (en) 2001-07-06 2001-07-06 Data storage device including nanotube electron sources
US09/900662 2001-07-06

Publications (1)

Publication Number Publication Date
CN1396659A true CN1396659A (zh) 2003-02-12

Family

ID=25412893

Family Applications (1)

Application Number Title Priority Date Filing Date
CN02141131A Pending CN1396659A (zh) 2001-07-06 2002-07-05 包括纳米管电子源的数据存储装置

Country Status (4)

Country Link
US (2) US6928042B2 (enExample)
EP (1) EP1274092A3 (enExample)
JP (1) JP2003094400A (enExample)
CN (1) CN1396659A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
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CN1300839C (zh) * 2004-08-06 2007-02-14 中国科学院上海微系统与信息技术研究所 一种纳电子相变存储器的制备方法

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US20020138301A1 (en) * 2001-03-22 2002-09-26 Thanos Karras Integration of a portal into an application service provider data archive and/or web based viewer
US6985377B2 (en) 2002-10-15 2006-01-10 Nanochip, Inc. Phase change media for high density data storage
US7233517B2 (en) 2002-10-15 2007-06-19 Nanochip, Inc. Atomic probes and media for high density data storage
US6982898B2 (en) 2002-10-15 2006-01-03 Nanochip, Inc. Molecular memory integrated circuit utilizing non-vibrating cantilevers
WO2004075171A2 (en) * 2003-02-14 2004-09-02 Oakley William S Data recording using carbon nanotube electron sources
WO2005013033A2 (en) * 2003-07-03 2005-02-10 William Oakley Array of cnt heads
US8305861B2 (en) * 2003-07-03 2012-11-06 Oakley William S Adaptive read and read-after-write for carbon nanotube recorders
FR2862156B1 (fr) * 2003-11-06 2007-01-05 Commissariat Energie Atomique Dispositif d'enregistrement de donnees a micro-pointes conductrices et procede de fabrication d'un tel dispositif
US20050243660A1 (en) * 2004-04-16 2005-11-03 Rust Thomas F Methods for erasing bit cells in a high density data storage device
US7379412B2 (en) 2004-04-16 2008-05-27 Nanochip, Inc. Methods for writing and reading highly resolved domains for high density data storage
US7301887B2 (en) 2004-04-16 2007-11-27 Nanochip, Inc. Methods for erasing bit cells in a high density data storage device
US20050232061A1 (en) 2004-04-16 2005-10-20 Rust Thomas F Systems for writing and reading highly resolved domains for high density data storage
US7620632B2 (en) * 2004-06-30 2009-11-17 Skyler Technology, Inc. Method and/or system for performing tree matching
WO2006034398A2 (en) * 2004-09-21 2006-03-30 The Johns Hopkins University Controlled transport and assembly of nanostructures
KR20070050107A (ko) 2004-09-27 2007-05-14 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 상변화 물질을 포함하는 나노와이어 전기 소자
US7190539B1 (en) 2004-12-29 2007-03-13 Storage Technology Corporation Magnetic recorder having carbon nanotubes embedded in anodic alumina for emitting electron beams to perform heat-assisted magnetic recording
US7463573B2 (en) * 2005-06-24 2008-12-09 Nanochip, Inc. Patterned media for a high density data storage device
US20070041237A1 (en) * 2005-07-08 2007-02-22 Nanochip, Inc. Media for writing highly resolved domains
US7367119B2 (en) * 2005-06-24 2008-05-06 Nanochip, Inc. Method for forming a reinforced tip for a probe storage device
US20060291271A1 (en) * 2005-06-24 2006-12-28 Nanochip, Inc. High density data storage devices having servo indicia formed in a patterned media
US20070008867A1 (en) * 2005-07-08 2007-01-11 Nanochip, Inc. High density data storage devices with a lubricant layer comprised of a field of polymer chains
US20070008865A1 (en) * 2005-07-08 2007-01-11 Nanochip, Inc. High density data storage devices with polarity-dependent memory switching media
US7309630B2 (en) * 2005-07-08 2007-12-18 Nanochip, Inc. Method for forming patterned media for a high density data storage device
US20070008866A1 (en) * 2005-07-08 2007-01-11 Nanochip, Inc. Methods for writing and reading in a polarity-dependent memory switch media
US7420199B2 (en) * 2005-07-14 2008-09-02 Infineon Technologies Ag Resistivity changing memory cell having nanowire electrode
CA2621397A1 (en) 2005-09-06 2007-03-15 Nantero, Inc. Method and system of using nanotube fabrics as joule heating elements for memories and other applications
US20080001075A1 (en) * 2006-06-15 2008-01-03 Nanochip, Inc. Memory stage for a probe storage device
US20080175033A1 (en) * 2007-01-19 2008-07-24 Nanochip, Inc. Method and system for improving domain stability in a ferroelectric media
US20080233672A1 (en) * 2007-03-20 2008-09-25 Nanochip, Inc. Method of integrating mems structures and cmos structures using oxide fusion bonding
CN101504948B (zh) * 2008-02-05 2011-04-06 财团法人工业技术研究院 中空尖笔状结构与包含其的装置及其制造方法
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US10225082B2 (en) 2016-07-26 2019-03-05 International Business Machines Corporation Carbon nanotube physical entropy source

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US6498349B1 (en) * 1997-02-05 2002-12-24 Ut-Battelle Electrostatically focused addressable field emission array chips (AFEA's) for high-speed massively parallel maskless digital E-beam direct write lithography and scanning electron microscopy
US5986381A (en) 1997-03-14 1999-11-16 Hewlett-Packard Company Electrostatic actuator with spatially alternating voltage patterns
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JP3902883B2 (ja) 1998-03-27 2007-04-11 キヤノン株式会社 ナノ構造体及びその製造方法
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1300839C (zh) * 2004-08-06 2007-02-14 中国科学院上海微系统与信息技术研究所 一种纳电子相变存储器的制备方法

Also Published As

Publication number Publication date
US7295503B2 (en) 2007-11-13
US6928042B2 (en) 2005-08-09
JP2003094400A (ja) 2003-04-03
EP1274092A2 (en) 2003-01-08
US20050218322A1 (en) 2005-10-06
EP1274092A3 (en) 2003-10-15
US20030007443A1 (en) 2003-01-09

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