CN1396659A - 包括纳米管电子源的数据存储装置 - Google Patents

包括纳米管电子源的数据存储装置 Download PDF

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CN1396659A
CN1396659A CN02141131A CN02141131A CN1396659A CN 1396659 A CN1396659 A CN 1396659A CN 02141131 A CN02141131 A CN 02141131A CN 02141131 A CN02141131 A CN 02141131A CN 1396659 A CN1396659 A CN 1396659A
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J·H·尼克尔
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HP Inc
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Abstract

数据存储装置(110)包括相变存储层(112)和作为电子源的纳米管(212)的阵列(114)。

Description

包括纳米管电子源的数据存储装置
技术领域
本发明总的涉及电子源。本发明还涉及数据存储装置。
背景技术
几十年来研究人员一直致力于数据存储装置如磁硬驱动器、光驱动器和半导体随机存取存储器的存储密度提高和存储成本降低。然而，由于传统技术似乎是正接近对存储密度的基本限制，要增加存储密度变得更加困难。例如，基于传统磁记录的信息存储正很快接近基本物理限制如超顺磁性限制，在这种限制之下磁位在室温时是不稳定的。
不用面对这些基本限制的存储装置正被研究。例如Gibson等在美国专利5,557,596中所描述的就是这样一种信息存储装置。该装置包括具有电子发射表面的多电子源，该电子发射表面最接近存储介质。在写操作期间，电子源用相对高强度的电子束轰击存储介质。在读操作期间，电子源用相对低强度的电子束轰击存储介质。
这种装置中的存储位的尺寸可以通过降低电子束的直径而得到减小。存储位的尺寸的减小增加存储密度和容量，并且降低存储成本。
在这种装置中“Spindt”发射器可用来产生聚焦的电子束。Spindt发射器为圆锥形状，并在其锥尖发射电子束。该锥尖加工得尽可能尖以减小工作电压并获得小的电子束直径。
然而，Spindt发射器引起一些问题。一个问题是Spindt发射器对冲击敏感。Spindt发射器的尖端离存储介质仅仅只有几个纳米。如果一个尖端同存储介质接触，它将被损坏。另一个问题是Spindt发射器发射的电子束的方向性。有时电子束可以从圆锥的侧面而不是从尖端离开的。还有一个问题是由于比功函数大的能量引起的材料从尖端的损失。材料的损失会降低尖端的有效性。
发明内容
按照本发明的一个方面，数据存储装置包括作为电子源的纳米管。本发明的其它方面和优点将通过接下来的祥述，连同附图，举例阐述本发明的原理而变得清晰。
附图说明
图1是数据存储装置的图解。
图2和图3是存储装置的纳米管阵列的图解。
具体实施方式
如用于说明的附图所示，本发明体现在超高密度数据存储装置中。该数据存储装置包括存储介质和作为电子源的纳米管阵列。比Spindt发射器更稳定，如果该纳米管同存储介质接触它们不会被损坏。此外，该纳米管比Spindt发射器有更高的电子束方向性。更高的方向性将导致电子束具有增加的聚焦和准确性，这使位尺寸得以减小。位尺寸减小将增加存储密度和降低存储成本。更高的方向性也允许纳米管的尖端离存储介质的距离更大。纳米管同Spindt发射器比较有更低的材料转移率。更低的转移率增加了电子源的有效寿命。
参考图1，数据存储装置110的存储介质112包括一个存储层。存储层可以用相变材料制造，如基于硫族化合物的相变材料。通过施加具有适当功率幅度与时间关系的聚焦辐射，存储层的局部区域能在至少两种状态之间实现可逆性转变。例如，局部区域可以在非晶态和晶态之间转变，或者它们可以在不同的晶态之间转变。通过用足以融化相变材料的高强度能量束加热一个区域，然后迅速减少能量束强度急冷该区域，该区域的状态可以从晶态转变成非晶态。急冷相变材料致使它在没有时间成核和生长晶粒的情况下迅速冷却到非晶态。通过用能量束在足以允许晶粒成核和生长的温度加热相变材料，一个区域的状态可以从非晶态转变成晶态。不同的状态代表不同的逻辑值。
存储装置110还包括用作电子源的纳米管(例如：碳纳米管，氮化硼纳米管)阵列114。每个纳米管发射具有适当功率幅度与时间关系的电子束使局部存储区域在非晶态和晶态之间或者在不同的晶态之间转变。纳米管的尖端离存储层最近。电子光学可用来将电子束聚焦到存储介质112上。
纳米管电子源阵列114可以相对于存储介质112安置。因此，每个纳米管尖端可以安置在局部存储区域上方。在替换方案中，可以使用微动器(micromover)(未示出)在读写操作期间沿着存储层表面扫描纳米管阵列114。示范性微动器在受让人的美国专利5,986,381中有描述。
纳米管的稳定性和高方向性允许纳米管尖端和相变层表面之间的距离、相变层表面的平直度等有宽松的公差。
现在参考图2，它示出了纳米管212的阵列114。纳米管212可以是单壁或双壁的，并且它们由其直径、长度、传导率和空间螺旋特征或扭曲状态决定。纳米管212优选是细长的，因为更高的长度直径比提供更好的方向性。纳米管212可以有大于10∶1的长度直径比。例如，碳纳米管是长和薄的碳管的与呋(fullenrene)有关的结构。该碳纳米管紧密地键合，导致存储介质112的相变层具有低的材料转移率。
纳米管212在衬底214上形成。光刻技术或者其它的掩模技术可被用来规定纳米管212在衬底214生长的地方。虽然只有10个纳米管212的单列显示在图2中，但是阵列114可以有任意多的行和列。阵列114可以包括成百或成千的纳米管212。纳米管212之间的间距部分取决于是否使用微动器从存储层表面的一边到另一边扫描阵列114。
在硅衬底上制造碳纳米管114的非光刻技术在Nilsson等的“扫描已形成图案的碳纳米管的场致发射(Scanning field emission frompatterned carbon nanotube films)”，Applied Physics Letters，2000年4月，第76卷，第15期，中有描述。催化剂墨汁在硅衬底的同质氧化物上“印制”成图案，碳纳米管得以生长。
此外参考图3，用于寻址纳米管212的字和位线216和218也形成在衬底214上。纳米管212在读写操作期间可以同时地或者用多路复用的方式被寻址。为在一读或写操作期间选择一纳米管产生电子束，在所选择的纳米管212和存储介质112之间产生电压。字和位线216和218被用来将电压施加到所选择的纳米管212上。参考电位被施加到存储介质112，致使被选择的纳米管212变成阴极，存储介质112变成阳极。纳米管212的传导性可被改变并且电位能够变化，以获得具有所期望的振幅与时间关系的电子束。纳米管212不需要超高真空产生电子束。
除了使用纳米管而非Spindt发射器以外，读写操作可以如Gibson等在美国专利5,557,596中所描述的那样执行。
纳米管电子源不限于用在数据存储装置中。例如，在平版印刷应用中纳米管电子源可以用作电子发射器。
尽管本发明的一个具体实施例已得到描述和阐释，但本发明并不局限于所描述和阐释部分的具体形式或布置。而且，本发明将根据下面的权利要求进行解释。

Claims (8)

1.数据存储装置(110)，包括作为电子源的纳米管(212)的阵列(114)。
2.权利要求1的装置，其中该纳米管(212)是基于碳的。
3.权利要求1的装置，其中该纳米管(212)是基于氮化硼的。
4.权利要求1的装置，进一步包括最接近电子源尖端的相变存储层(112)。
5.权利要求1的装置，其中每个纳米管(212)是细长的。
6.权利要求5的装置，其中该纳米管(212)具有大于10∶1的长度直径比。
7.权利要求1的装置，进一步包括用于寻址纳米管(212)的字和位线(216，218)。
8.权利要求1的装置，进一步包括用于定位阵列的微动器。
CN02141131A 2001-07-06 2002-07-05 包括纳米管电子源的数据存储装置 Pending CN1396659A (zh)

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US09/900,662 US6928042B2 (en) 2001-07-06 2001-07-06 Data storage device including nanotube electron sources

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