CN1390676A - 一种去除硅化物形成过程中多余金属的方法 - Google Patents
一种去除硅化物形成过程中多余金属的方法 Download PDFInfo
- Publication number
- CN1390676A CN1390676A CN 02136121 CN02136121A CN1390676A CN 1390676 A CN1390676 A CN 1390676A CN 02136121 CN02136121 CN 02136121 CN 02136121 A CN02136121 A CN 02136121A CN 1390676 A CN1390676 A CN 1390676A
- Authority
- CN
- China
- Prior art keywords
- ozone
- silicide
- apm
- spm
- hydrogen peroxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB021361215A CN1326638C (zh) | 2002-07-19 | 2002-07-19 | 一种去除硅化物形成过程中多余金属的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB021361215A CN1326638C (zh) | 2002-07-19 | 2002-07-19 | 一种去除硅化物形成过程中多余金属的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1390676A true CN1390676A (zh) | 2003-01-15 |
CN1326638C CN1326638C (zh) | 2007-07-18 |
Family
ID=4748509
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB021361215A Expired - Fee Related CN1326638C (zh) | 2002-07-19 | 2002-07-19 | 一种去除硅化物形成过程中多余金属的方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN1326638C (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100466199C (zh) * | 2006-08-07 | 2009-03-04 | 联华电子股份有限公司 | 清除残余金属的方法 |
CN102403211A (zh) * | 2010-09-17 | 2012-04-04 | 中芯国际集成电路制造(上海)有限公司 | 制备金属硅化物的方法 |
CN105632924A (zh) * | 2014-10-30 | 2016-06-01 | 中芯国际集成电路制造(上海)有限公司 | 一种用于制造半导体器件的方法 |
CN107871651A (zh) * | 2016-09-26 | 2018-04-03 | 东莞新科技术研究开发有限公司 | 金属硅化物的清洗方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1052569C (zh) * | 1992-08-27 | 2000-05-17 | 株式会社半导体能源研究所 | 制造半导体器件的方法 |
JP3575859B2 (ja) * | 1995-03-10 | 2004-10-13 | 株式会社東芝 | 半導体基板の表面処理方法及び表面処理装置 |
JP2000502212A (ja) * | 1995-12-15 | 2000-02-22 | ワトキンズ―ジョンソン カンパニー | 金属汚染物質を減らした絶縁膜の形成方法 |
US6630074B1 (en) * | 1997-04-04 | 2003-10-07 | International Business Machines Corporation | Etching composition and use thereof |
EP1100630B1 (en) * | 1998-04-16 | 2004-02-18 | Semitool, Inc. | Process and apparatus for treating a workpiece such as a semiconductor wafer |
-
2002
- 2002-07-19 CN CNB021361215A patent/CN1326638C/zh not_active Expired - Fee Related
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100466199C (zh) * | 2006-08-07 | 2009-03-04 | 联华电子股份有限公司 | 清除残余金属的方法 |
CN102403211A (zh) * | 2010-09-17 | 2012-04-04 | 中芯国际集成电路制造(上海)有限公司 | 制备金属硅化物的方法 |
CN105632924A (zh) * | 2014-10-30 | 2016-06-01 | 中芯国际集成电路制造(上海)有限公司 | 一种用于制造半导体器件的方法 |
CN105632924B (zh) * | 2014-10-30 | 2019-01-22 | 中芯国际集成电路制造(上海)有限公司 | 一种用于制造半导体器件的方法 |
CN107871651A (zh) * | 2016-09-26 | 2018-04-03 | 东莞新科技术研究开发有限公司 | 金属硅化物的清洗方法 |
Also Published As
Publication number | Publication date |
---|---|
CN1326638C (zh) | 2007-07-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100505168C (zh) | 半导体器件中金属硅化物的单向扩散 | |
US7649263B2 (en) | Semiconductor device | |
CN101024882A (zh) | 硅表面清洁溶液以及用其制造半导体器件的方法 | |
CN102543672A (zh) | 去除自然氧化硅层和形成自对准硅化物的方法 | |
CN101724847A (zh) | 金属残留物的清洗方法 | |
CN101211781A (zh) | 自对准金属硅化物的制造方法 | |
US20140073130A1 (en) | Forming nickel-platinum alloy self-aligned silicide contacts | |
CN105575790A (zh) | 镍金属硅化物的制备方法 | |
US6251779B1 (en) | Method of forming a self-aligned silicide on a semiconductor wafer | |
CN1326638C (zh) | 一种去除硅化物形成过程中多余金属的方法 | |
CN101459071B (zh) | 去除硅衬底表面氧化硅层及形成接触孔的方法 | |
JP3492973B2 (ja) | 半導体装置の製造方法 | |
US7306681B2 (en) | Method of cleaning a semiconductor substrate | |
JP4101901B2 (ja) | 半導体装置の製造方法 | |
CN105990341A (zh) | 半导体结构及其形成方法 | |
CN100428421C (zh) | 一种干法去除硅化物形成过程中多余金属的方法 | |
CN1259695C (zh) | 使用高电阻硅化物靶材生长硅化物的工艺 | |
CN100466199C (zh) | 清除残余金属的方法 | |
KR101019710B1 (ko) | 반도체 소자의 제조방법 | |
JPS6276560A (ja) | 半導体装置の製造方法 | |
CN100416778C (zh) | 超大规模集成电路难熔金属硅化物的形成方法 | |
US20050142826A1 (en) | Method for forming silicide film in semiconductor device | |
JP2833530B2 (ja) | 半導体装置の製造方法 | |
US7595264B2 (en) | Fabrication method of semiconductor device | |
TW469569B (en) | Method for manufacturing low-resistance polysilicon/metal gate structure |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG (GROUP) CO., LTD.; APPLICANT Free format text: FORMER OWNER: SHANGHAI HUAHONG (GROUP) CO., LTD. Effective date: 20060901 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20060901 Address after: 201203 No. 177 blue wave road, Zhangjiang hi tech park, Shanghai, Pudong New Area Applicant after: Shanghai Huahong (Group) Co., Ltd. Co-applicant after: Shanghai integrated circuit research and Development Center Co., Ltd. Address before: 18, Huaihai Road, Shanghai, No. 200020, building 918 Applicant before: Shanghai Huahong (Group) Co., Ltd. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070718 Termination date: 20140719 |
|
EXPY | Termination of patent right or utility model |