CN100428421C - 一种干法去除硅化物形成过程中多余金属的方法 - Google Patents
一种干法去除硅化物形成过程中多余金属的方法 Download PDFInfo
- Publication number
- CN100428421C CN100428421C CNB021121516A CN02112151A CN100428421C CN 100428421 C CN100428421 C CN 100428421C CN B021121516 A CNB021121516 A CN B021121516A CN 02112151 A CN02112151 A CN 02112151A CN 100428421 C CN100428421 C CN 100428421C
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- silicide
- metal
- etching
- plasma
- forming process
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- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CNB021121516A CN100428421C (zh) | 2002-06-20 | 2002-06-20 | 一种干法去除硅化物形成过程中多余金属的方法 |
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CNB021121516A CN100428421C (zh) | 2002-06-20 | 2002-06-20 | 一种干法去除硅化物形成过程中多余金属的方法 |
Publications (2)
Publication Number | Publication Date |
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CN1396635A CN1396635A (zh) | 2003-02-12 |
CN100428421C true CN100428421C (zh) | 2008-10-22 |
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CNB021121516A Expired - Fee Related CN100428421C (zh) | 2002-06-20 | 2002-06-20 | 一种干法去除硅化物形成过程中多余金属的方法 |
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Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN100466199C (zh) * | 2006-08-07 | 2009-03-04 | 联华电子股份有限公司 | 清除残余金属的方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5234847A (en) * | 1990-04-02 | 1993-08-10 | National Semiconductor Corporation | Method of fabricating a BiCMOS device having closely spaced contacts |
US5419805A (en) * | 1992-03-18 | 1995-05-30 | Northern Telecom Limited | Selective etching of refractory metal nitrides |
CN1155160A (zh) * | 1995-09-28 | 1997-07-23 | 日本电气株式会社 | 制备自对准硅化物结构半导体器件的方法 |
US5953633A (en) * | 1997-07-11 | 1999-09-14 | Utek Semiconductor Corp. | Method for manufacturing self-aligned titanium salicide using two two-step rapid thermal annealing steps |
-
2002
- 2002-06-20 CN CNB021121516A patent/CN100428421C/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5234847A (en) * | 1990-04-02 | 1993-08-10 | National Semiconductor Corporation | Method of fabricating a BiCMOS device having closely spaced contacts |
US5419805A (en) * | 1992-03-18 | 1995-05-30 | Northern Telecom Limited | Selective etching of refractory metal nitrides |
CN1155160A (zh) * | 1995-09-28 | 1997-07-23 | 日本电气株式会社 | 制备自对准硅化物结构半导体器件的方法 |
US5953633A (en) * | 1997-07-11 | 1999-09-14 | Utek Semiconductor Corp. | Method for manufacturing self-aligned titanium salicide using two two-step rapid thermal annealing steps |
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Publication number | Publication date |
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CN1396635A (zh) | 2003-02-12 |
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PB01 | Publication | ||
C10 | Entry into substantive examination | ||
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ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG (GROUP) CO., LTD.; APPLICANT Free format text: FORMER OWNER: SHANGHAI HUAHONG (GROUP) CO., LTD. Effective date: 20060901 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20060901 Address after: 201203 No. 177 blue wave road, Zhangjiang hi tech park, Shanghai, Pudong New Area Applicant after: Shanghai Huahong (Group) Co., Ltd. Co-applicant after: Shanghai integrated circuit research and Development Center Co., Ltd. Address before: 18, Huaihai Road, Shanghai, No. 200020, building 918 Applicant before: Shanghai Huahong (Group) Co., Ltd. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081022 Termination date: 20140620 |
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EXPY | Termination of patent right or utility model |