CN1384980A - 差动放大器输入端防静电放电保护电路 - Google Patents
差动放大器输入端防静电放电保护电路 Download PDFInfo
- Publication number
- CN1384980A CN1384980A CN00815006.0A CN00815006A CN1384980A CN 1384980 A CN1384980 A CN 1384980A CN 00815006 A CN00815006 A CN 00815006A CN 1384980 A CN1384980 A CN 1384980A
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- CN
- China
- Prior art keywords
- circuit
- pin
- virtual earth
- diode
- earth node
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000001681 protective effect Effects 0.000 claims description 55
- 238000000034 method Methods 0.000 claims description 9
- 230000003068 static effect Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 230000003071 parasitic effect Effects 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/372—Noise reduction and elimination in amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/444—Diode used as protection means in an amplifier, e.g. as a limiter or as a switch
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Amplifiers (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
Description
插针之间的静电放电 | 放电通道 | |
+ve | -ve | |
IP | IPB | 二极管30+42 |
IP | VEE | 二极管30+52R |
VEE | IP | 二极管52+32 |
IP | VCC | 二极管30+50 |
VCC | IP | 二极管32+50R |
Claims (22)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16180199P | 1999-10-27 | 1999-10-27 | |
US60/161,801 | 1999-10-27 | ||
US09/541,872 US6400541B1 (en) | 1999-10-27 | 2000-04-03 | Circuit for protection of differential inputs against electrostatic discharge |
US09/541,872 | 2000-04-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1384980A true CN1384980A (zh) | 2002-12-11 |
CN1175491C CN1175491C (zh) | 2004-11-10 |
Family
ID=26858126
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB008150060A Expired - Lifetime CN1175491C (zh) | 1999-10-27 | 2000-10-11 | 差动放大器输入端防静电放电保护电路 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6400541B1 (zh) |
EP (1) | EP1236229B1 (zh) |
CN (1) | CN1175491C (zh) |
DE (1) | DE60040300D1 (zh) |
WO (1) | WO2001031708A1 (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100449749C (zh) * | 2005-12-20 | 2009-01-07 | 联咏科技股份有限公司 | 具有静电放电保护电路的差动输入输出级 |
CN1985370B (zh) * | 2004-07-13 | 2010-09-08 | Nxp股份有限公司 | 包含esd器件的电子器件 |
CN102255626A (zh) * | 2011-06-30 | 2011-11-23 | 清华大学 | 一种基于π型网络带有静电放电保护的毫米波频段接收机 |
US8179645B2 (en) | 2008-01-31 | 2012-05-15 | Realtek Semiconductor Corp. | Network communication processing apparatus with ESD protection |
CN101764397B (zh) * | 2008-12-24 | 2013-06-05 | 美格纳半导体有限会社 | 静电放电保护电路 |
CN103855703A (zh) * | 2012-12-06 | 2014-06-11 | Nxp股份有限公司 | Esd保护 |
CN107769757A (zh) * | 2017-10-10 | 2018-03-06 | 西安微电子技术研究所 | 一种比较器抗静电电路及其工作方法 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4037029B2 (ja) * | 2000-02-21 | 2008-01-23 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
KR20020085101A (ko) * | 2001-05-04 | 2002-11-16 | 삼성전자 주식회사 | 다이오드를 이용한 정전기적 방전으로부터의 보호 회로 |
US6738248B1 (en) * | 2002-10-28 | 2004-05-18 | Lsi Logic Corporation | ESD protection circuit for low amplitude signals |
TWI268657B (en) * | 2003-03-27 | 2006-12-11 | Realtek Semiconductor Corp | Variable gain amplifier |
US7026839B1 (en) | 2003-06-26 | 2006-04-11 | Marvell International Ltd. | Circuits, architectures, systems and methods for overvoltage protection |
JP4114751B2 (ja) * | 2004-03-31 | 2008-07-09 | シャープ株式会社 | 半導体装置 |
US20060063285A1 (en) * | 2004-09-23 | 2006-03-23 | Miller Joseph P | Methods for measuring die temperature |
KR100617801B1 (ko) * | 2005-05-27 | 2006-08-28 | 삼성전자주식회사 | 이동통신 단말기의 정전기 및 감전 보호 장치 |
EP2148434A1 (en) * | 2008-07-24 | 2010-01-27 | Seiko Epson Corporation | Radio frequency circuit with electrostatic protection and impedance matching and method for calibrating the same |
CN104145391B (zh) * | 2012-02-15 | 2017-08-08 | 高通股份有限公司 | 用于差分输入/输出接口的电涌保护 |
US9219055B2 (en) | 2012-06-14 | 2015-12-22 | International Business Machines Corporation | Structure and method for dynamic biasing to improve ESD robustness of current mode logic (CML) drivers |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3879640A (en) | 1974-02-11 | 1975-04-22 | Rca Corp | Protective diode network for MOS devices |
US4044313A (en) | 1976-12-01 | 1977-08-23 | Rca Corporation | Protective network for an insulated-gate field-effect (IGFET) differential amplifier |
DE2751289A1 (de) | 1977-11-16 | 1979-05-17 | Siemens Ag | Mos-fet-differenzverstaerker |
US4158863A (en) * | 1978-03-07 | 1979-06-19 | American Optical Corporation | Input overload protection circuit |
NL8100242A (nl) * | 1981-01-20 | 1982-08-16 | Philips Nv | Overspanningsbeveiliging van een lijncircuit. |
JPH02246613A (ja) | 1989-03-20 | 1990-10-02 | Fujitsu Ltd | 静電破壊保護回路 |
JPH0722928A (ja) | 1993-06-24 | 1995-01-24 | Nec Corp | 半導体集積回路装置 |
US5764464A (en) * | 1995-11-17 | 1998-06-09 | Burr-Brown Corporation | Low input bias current circuit |
JPH1146120A (ja) * | 1997-07-25 | 1999-02-16 | Mitsubishi Electric Corp | 差動増幅回路 |
US5862031A (en) | 1997-11-26 | 1999-01-19 | Analog Devices, Inc. | ESD protection circuit for integrated circuits having a bipolar differential input |
-
2000
- 2000-04-03 US US09/541,872 patent/US6400541B1/en not_active Expired - Lifetime
- 2000-10-11 EP EP00981012A patent/EP1236229B1/en not_active Expired - Lifetime
- 2000-10-11 CN CNB008150060A patent/CN1175491C/zh not_active Expired - Lifetime
- 2000-10-11 WO PCT/US2000/041118 patent/WO2001031708A1/en active Application Filing
- 2000-10-11 DE DE60040300T patent/DE60040300D1/de not_active Expired - Lifetime
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1985370B (zh) * | 2004-07-13 | 2010-09-08 | Nxp股份有限公司 | 包含esd器件的电子器件 |
CN100449749C (zh) * | 2005-12-20 | 2009-01-07 | 联咏科技股份有限公司 | 具有静电放电保护电路的差动输入输出级 |
US8179645B2 (en) | 2008-01-31 | 2012-05-15 | Realtek Semiconductor Corp. | Network communication processing apparatus with ESD protection |
CN101764397B (zh) * | 2008-12-24 | 2013-06-05 | 美格纳半导体有限会社 | 静电放电保护电路 |
CN102255626A (zh) * | 2011-06-30 | 2011-11-23 | 清华大学 | 一种基于π型网络带有静电放电保护的毫米波频段接收机 |
CN102255626B (zh) * | 2011-06-30 | 2013-08-21 | 清华大学 | 一种基于∏型网络带有静电放电保护的毫米波频段接收机 |
CN103855703A (zh) * | 2012-12-06 | 2014-06-11 | Nxp股份有限公司 | Esd保护 |
CN103855703B (zh) * | 2012-12-06 | 2017-09-22 | 安世有限公司 | Esd保护 |
CN107769757A (zh) * | 2017-10-10 | 2018-03-06 | 西安微电子技术研究所 | 一种比较器抗静电电路及其工作方法 |
CN107769757B (zh) * | 2017-10-10 | 2020-12-01 | 西安微电子技术研究所 | 一种比较器抗静电电路及其工作方法 |
Also Published As
Publication number | Publication date |
---|---|
EP1236229B1 (en) | 2008-09-17 |
WO2001031708A8 (en) | 2001-06-14 |
US6400541B1 (en) | 2002-06-04 |
DE60040300D1 (de) | 2008-10-30 |
EP1236229A1 (en) | 2002-09-04 |
CN1175491C (zh) | 2004-11-10 |
WO2001031708A1 (en) | 2001-05-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CI01 | Correction of invention patent gazette |
Correction item: Priority Correct: 1999.10.27 US 60/161,801|2000.04.03 US 09/541,872 False: 2000.04.03 US 09/541,872 Number: 45 Volume: 20 |
|
CI03 | Correction of invention patent |
Correction item: Priority Correct: 1999.10.27 US 60/161,801|2000.04.03 US 09/541,872 False: 2000.04.03 US 09/541,872 Number: 45 Page: The title page Volume: 20 |
|
ERR | Gazette correction |
Free format text: CORRECT: PRIORITY; FROM: 2000.4.3 US 09/541,872 TO: 1999.10.27 US 60/161,801 2000.4.3 US 09/541,872 |
|
ASS | Succession or assignment of patent right |
Owner name: MEDIATEK INC. Free format text: FORMER OWNER: ANALOG DEVICES, INC. Effective date: 20080404 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20080404 Address after: Hsinchu Science Industrial Park, Taiwan Patentee after: MediaTek.Inc Address before: Massachusetts, USA Patentee before: Analog Devices, Inc. |
|
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20041110 |