CN1357929A - 光半导体器件及其制造方法 - Google Patents

光半导体器件及其制造方法 Download PDF

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CN1357929A
CN1357929A CN01109555A CN01109555A CN1357929A CN 1357929 A CN1357929 A CN 1357929A CN 01109555 A CN01109555 A CN 01109555A CN 01109555 A CN01109555 A CN 01109555A CN 1357929 A CN1357929 A CN 1357929A
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epoxy resin
semiconductor device
transmission
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CN1225033C (zh
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李宅烈
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PHOTOELECTRON CO Ltd
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Abstract

一种光半导体器件,其制造是通过采用透射型环氧树脂模制的一阳极引脚支架和一阴极引脚支架,以及通过在所述树脂之下端形成一层反射型热辐射环氧树脂层,或是一层混合有色彩的反射型热辐射环氧树脂层,从而改善该器件的发光效率和热辐射能力;该器件的制造方法是,通过将具有反射型填充物的环氧树脂和强热辐射型的环氧树脂、或是反射型热辐射并混有色彩的环氧树脂设置于透射型环氧树脂之下端,以制成该光半导体器件。

Description

光半导体器件及其制造方法
本发明涉及一种光半导体器件及其制造方法，特别是一种大大改善其发光效率和热辐射能力的光半导体器件之制造方法。
通常，光半导体器件是通过电信号实现光传送的部件，它主要分为：普通的发光二极管和光接收二极管(光电晶体管、光电二极管、三极管交流半导体、光电集成电路)，发光二极管将电信号转换为光信号并用于前向输出，光接收二极管接收光信号并将其转换为电信号。这些所制造的光半导体器件产品，波长处于从可见光至红外线的宽波长范围内，其波长对应于组成半导体晶体之PN结的杂质的不同种类、密度和结构。
以下说明的光半导体器件以发光二极管为例。
发光二极管是一种发光元件，即所谓的注入式电致发光p-n结，它能在很低的电压下工作且使用寿命长，因此，它作为固体指示元件或图像指示器等，应用非常广泛。
发光二极管的结构如图1所示，它包括一晶片2，当电源加在阴极引脚3和阳极引脚4时该晶片发光，该两电极由导电金属材料制成，用于使电加于所述的晶片2，所述的晶片2被导电胶固定在一杯形垫片5上，该垫片5设置于所述阴极引脚3的一端，同时，晶片2由导线6与所述阳极引脚4之一端连接，也就是说，晶片2电连接于所述的阴极引脚3与阳极引脚4之间。
如图2所示，所述的晶片2模制于绝缘材料模7之中，以使其免受外部影响，但在其构造中，阴极引脚3和阳极引脚4的其它端部暴露于外，以便电源能从外部供给所述的晶片2。
当上述发光二极管1的阴极引脚3和阳极引脚4之暴露端部与一电路实现电连接时，电源通过所述的阴极引脚3和阳极引脚4供给所述晶片2，该发光二极管开始发光。模7通常由环氧树脂组成，并根据发光二极管1的波长，制成红色、绿色、橙色和其它颜色或无色透明体。
然而，象这种现有的二极管之中，在其壳体中的封固热应力作用下，光发射元件发射的光总是在减弱，而其光接收元件如果长时间使用，由于被其转换成电信号之光的量减少，光接收元件易于遭致光接收效率的退化。
在理想的发光二极管中，光的发射是与正向电流成正比的，而这限于理想的光发射元件不产生热量之情况；另一种情况是，随着正向电流的增大，由于热量的逸散，发光二极管的温度上升，光发射效率因此而降低，从而不能使其与正向电流量保持正比。简而言之，光发射元件中这种温度的上升不仅降低光发射效率，而且破坏发光晶片之p-n结的结合，因此导致其耐久性的降低。
换言之，如果发光(或光接收)晶片内所产生的热量不能有效地从壳体内散发出来，则晶片的光发射效率(或光接收元件的光接收效率)将降低，其可靠性得不到保证。
本发明的目的在于为解决这些问题，提出一种具有极好的热辐射性能和高可靠性的光半导体器件及其制造方法。
本发明的另一目的在于提出一种通过混合不同色彩之填充物而具有所需波长范围的光半导体器件及其制造方法。
本发明之又一目的在于提出一种光半导体器件及其制造方法，该光半导体器件通过前向无损耗地发射光线，而具有改善的光发射效率。
以下结合附图详细说明本发明的最佳实施例。
图1是常规的发光(光接收)二极管的纵向剖面图；
图2是用以说明生产常规的发光(光接收)二极管之过程的示意图；
图3是本发明之一实施例所制成的光半导体器件的纵向剖面图；
图4是本发明之另一实施例所制成的光半导体器件的纵向剖面图。
以下详细说明本发明的光半导体器件及其制造方法，需要时参照附图。
图3是根据本发明之一实施例的光半导体器件的纵向剖面图。如图3所示，在本发明之光半导体器件的结构中，包括一阳极引脚支架3；一阴极引脚支架4；导线6，用于使电流流通于所述阳极引脚支架3与一晶片2之间；透射型环氧树脂A，它模制两个所述引脚支架3和4之部分；反射型光辐射环氧树脂，设置于所述透射型环氧树脂的下端，其中包含热辐射填充物B或是有色环氧树脂B，该有色环氧树脂B中包含有色填充物。
常规的光半导体器件被密封于壳体中，包括根据发光晶片2之波长实现绿色、红色、黄色、黑色等色彩的环氧树脂。相比之下，与传统的技术不同的是，本发明的光半导体器件在两电极引脚支架3和4之部分采用透射型环氧树脂A，而其壳体之最下端采用反射型热辐射环氧树脂制成，或根据该晶片的波长范围采用相应的色彩。
在该光半导体器件的制造方法中，一对支架被布置于多组、多排之中。每一单个的引脚支架与导电胶点接，导电胶与一光学晶片结合；所述的引脚支架采用金线、经电极与所述的光学晶片连接；透射型环氧树脂被装入一模杯，该模杯采用容器状，以容纳壳体的每一组成物；被装入所述模杯的或是反射型热辐射(有机的、无机的、含有金属的)环氧树脂，或是那种可导出各种不同颜色(波长)的环氧树脂，当它硬化后，进行修整处理，使壳体合为一体。
图4是本发明之另一实施例的光半导体器件的纵向剖面图。与图3所示的实施例不同，在图4所示的方案中，反射型材料C被设置于透射型环氧树脂层A和热辐射型环氧树脂层B之间，该反射型材料为一种绝缘材料，它用于将从环氧树脂透镜反射来的光线再反射回去，因而能阻止从透射型环氧树脂反射来的光免受损耗。
如上所述，通过在透射型环氧树脂层之下端设置一层环氧树脂层，并于其中插入反射型及强热辐射型(有机的、无机的、含金属的)填充物和各种不同波长范围的填充物(有机的、无机的、含金属的)，以制造出一种光半导体器件，从而在本发明中，有可能避免常规的发光二极管或光接收二极管所固有的热老化现象，同时，通过实现各种不同波长范围的色彩，以提供一种具有发光效率高或光接收效率高的产品。

Claims (4)

1、一种光半导体器件制造方法，其特征在于采用一个双模，其中，透射型环氧树脂和反射型热辐射(有机的、无机的、含金属的)环氧树脂被分别装入一个模杯，该模杯根据不同的壳体而采用不同容器之形状。
2、一种光半导体器件制造方法，其特征在于与各种具有不同波长范围之填充物混合的环氧树脂(有机的、无机的、含金属的)被装入在透射型环氧树脂层之上，该透射型环氧树脂被装入一容器中，该容器根据不同的壳体采用不同的形状。
3、一种光半导体器件制造方法，其特征在于采用复合结构，其中反射型材料被装入在透射型环氧树脂之上，该透射型环氧树脂先被点入一个模杯中，然后热辐射型(有机的、无机的、含金属的)环氧树脂被点入在所述反射型材料之上，所述的模杯根据不同的壳体而采用不同的形状。
4、一种光半导体器件，根据上述之权利要求1至3所述之任一方法制成。
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