CN1348165A - 氧化铟锡膜用浸蚀液 - Google Patents

氧化铟锡膜用浸蚀液 Download PDF

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CN1348165A
CN1348165A CN01135428A CN01135428A CN1348165A CN 1348165 A CN1348165 A CN 1348165A CN 01135428 A CN01135428 A CN 01135428A CN 01135428 A CN01135428 A CN 01135428A CN 1348165 A CN1348165 A CN 1348165A
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indium oxide
etching liquid
tin film
ito
etching
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CN1185615C (zh
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山边纯成
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Toshiba Corp
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    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/91After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/53After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
    • C04B41/5338Etching
    • C04B41/5353Wet etching, e.g. with etchants dissolved in organic solvents
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
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    • C09K13/00Etching, surface-brightening or pickling compositions

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  • Ceramic Engineering (AREA)
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  • ing And Chemical Polishing (AREA)
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Abstract

提供一种ITO膜用浸蚀液,该浸蚀液含有浸蚀氧化铟锡的有机酸以及吸附于氧化铟锡膜表面、具有使表面电位为负电位的性质且分子内部不含有苯环的阴离子型表面活性剂。该浸蚀液使得对ITO膜进行快速浸蚀成为可能,并且能够在不增加水质负荷的情况下进行废水处理。

Description

氧化铟锡膜用浸蚀液
技术领域
本发明涉及组成液晶显示器等的透明导电膜—氧化铟锡(ITO)膜使用的浸蚀液。
背景技术
以前,使用草酸水溶液进行ITO膜的浸蚀。但其问题在于,由于该草酸水溶液对ITO膜的溶出速度慢,其结果导致浸蚀速度低。
为了克服上述问题,特开平7-141932号公报公开了一种在草酸水溶液中添加十二烷基苯磺酸的ITO膜用浸蚀液。该浸蚀液与单纯的草酸水溶液相比,虽然提高了浸蚀速度,但由于分子内含有苯环,使得在废液处理时产生了BOD(Biochemical Oxygen Demand)升高的问题。
附图说明
图1为表示本发明实施例1中的浸蚀液中十二烷酸三乙醇胺盐的添加量与ITO粒子表面ζ电位关系的示意图。
图2为表示本发明实施例2中的浸蚀液中十二烷酸三乙醇胺盐的添加量与ITO膜的浸蚀速度关系的示意图。
发明内容
本发明的目的在于提供一种能够快速浸蚀ITO膜,能够在不增加水质负荷的情况下进行废水处理的ITO膜用浸蚀液。
本发明所涉及的氧化铟锡膜用浸蚀液,其特点在于含有浸蚀氧化铟锡的有机酸以及吸附于氧化铟锡膜表面、具有使其表面电位(ζ电位)为负电位的性质且分子内部不含有苯环的阴离子型表面活性剂。
以下,参照本发明所涉及的氧化铟锡(ITO)膜用浸蚀液进行详细说明。
该ITO膜用浸蚀液是将浸蚀ITO的有机酸和吸附于ITO膜表面、具有使其表面电位(ζ电位)为负电位的性质且分子内部不含有苯环的阴离子型表面活性剂溶解于水而形成的。
作为上述有机酸,可以是例如草酸、马来酸、丙二酸等。在这些有机酸中,由于草酸不腐蚀铝等配线材料,而且价格低廉,因此是有效的有机酸。
上述有机酸,对于水而言,优选的配合比例,以重量百分比计,为0.1-3.5%。如果有机酸的配合量不足0.1wt%,难以以较快的速度溶解ITO膜。另一方面,如果有机酸的配合量超过3.5wt%,例如,当有机酸为草酸时,其以二水合物的形式析出。
作为上述阴离子型表面活性剂,可以是例如十二烷酸三乙醇胺盐、十二烷基硫酸铵、四(十二烷基)硫酸铵、7-乙基-2-甲基十一烷醇-4-硫酸铵等。
上述阴离子型表面活性剂,对于水而言,优选的配合比例为1-10000ppm。如果阴离子型表面活性剂的配合量不足1ppm,在配合效果方面很难提高浸蚀速度。另一方面,如果阴离子型表面活性剂的配合量超过10000ppm,则浸蚀液发泡,不利于使用。
上述说明所涉及的本发明的浸蚀液,由于是将草酸之类的有机酸以及吸附于ITO膜表面、具有使其表面电位(ζ电位)为负电位性质的十二烷酸三乙醇胺盐之类的阴离子型表面活性剂溶解于水后形成,因此能够提高对ITO膜的浸蚀速度。
即,用有机酸例如草酸水溶液对ITO膜进行浸蚀时,有必要将上述ITO膜的表面电位的绝对值增大,使从ITO膜表面溶出的ITO粒子表面间的电斥力增大。
由于相对于具有这种性质的草酸水溶液,ITO膜的表面电位为负电位,因此如果添加了十二烷酸三乙醇胺盐之类的具有吸附于ITO膜表面且使表面电位(ζ电位)为负电位性质的阴离子型表面活性剂,吸附于ITO膜表面后,能够使上述ITO膜表面的负电位更大。另外,上述表面活性剂也吸附于由于草酸的作用而使上述ITO膜溶出的ITO粒子表面。其结果是,由于ITO膜、ITO粒子间的电斥力变大,ITO粒子从ITO膜表面扩散的扩散力变大,因此能够提高ITO膜的浸蚀速度。
另外,由于采用十二烷酸三乙醇胺盐之类的分子内不含苯环的阴离子型表面活性剂,因此废水处理时,能够避免BOD增大等水质负荷增加的问题。
实施例
以下,对优选实施例进行详细说明。
实施例1
在草酸为3.4wt%、纯水为96.6wt%的草酸水溶液中添加0.03-0.38wt%的十二烷酸三乙醇胺盐,制备浸蚀液。将ITO粒子浸于该浸蚀液和草酸水溶液中,测定ITO粒子表面的ζ电位。其结果如图1所示。
从图1中可以看到,添加了十二烷酸三乙醇胺盐的浸蚀液与不添加十二烷酸三乙醇胺盐的草酸水溶液相比,ITO粒子表面的ζ电位向负方向移动。
实施例2
在草酸为3.4wt%、纯水为96.6wt%的草酸水溶液中添加3.8×10-11-0.38wt%的十二烷酸三乙醇胺盐,制备浸蚀液。将被ITO膜覆盖的玻璃基板浸于该浸蚀液(温度为40℃)中,采用接触式膜厚测定器测定ITO膜的浸蚀速度。其结果如图2所示。
从图2可以看到,在溶解有草酸和十二烷酸三乙醇胺盐的浸蚀液中,随着十二烷酸三乙醇胺盐添加量的增大,ITO膜的浸蚀速度增大。特别地,当十二烷酸三乙醇胺盐的浓度达到3.8×10-7以上时,与没有添加十二烷酸三乙醇胺盐的草酸水溶液相比,ITO膜的浸蚀速度能够增加10%左右。
正如以上详述的那样,根据本发明,能够提供一种在用于形成液晶显示装置的透明电极的制作布线图案的工艺中有用的ITO膜用浸蚀液,使得对ITO膜进行快速浸蚀成为可能,并且能够在不增加水质负荷的情况下进行废水处理。

Claims (3)

1.一种氧化铟锡膜用浸蚀液,其特征在于,含有浸蚀氧化铟锡的有机酸以及吸附于氧化铟锡膜表面、具有使表面电位(ζ电位)为负电位的性质且分子内部不含有苯环的阴离子型表面活性剂。
2.根据权利要求1所述的氧化铟锡膜用浸蚀液,其特征在于,上述有机酸为草酸。
3.根据权利要求1记载的氧化铟锡膜用浸蚀液,其特点在于,上述阴离子型表面活性剂为十二烷酸三乙醇胺盐或十二烷基硫酸铵。
CNB011354283A 2000-10-12 2001-10-12 氧化铟锡膜用浸蚀液 Expired - Fee Related CN1185615C (zh)

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JP2000312080A JP3445570B2 (ja) 2000-10-12 2000-10-12 酸化インジウム錫膜用エッチング液およびエッチング方法

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KR100448868B1 (ko) * 2002-07-10 2004-09-18 동우 화인켐 주식회사 비결정질 ito 식각액 조성물
KR20040005457A (ko) * 2002-07-10 2004-01-16 동우 화인켐 주식회사 개선된 ito 또는 비결정질 ito 식각액 조성물
EP1707763A4 (en) 2003-12-12 2010-06-23 Honda Motor Co Ltd CAMSHAFT, METHOD FOR MAKING A CAM FOR A CAMSHAFT AND METHOD FOR PRODUCING THE CAMSHAFT WAVE
JP4534591B2 (ja) 2004-05-17 2010-09-01 日本錬水株式会社 高純度シュウ酸水溶液の回収方法
JP2011166006A (ja) * 2010-02-12 2011-08-25 Sumitomo Precision Prod Co Ltd エッチング方法
CN102585832A (zh) * 2011-12-30 2012-07-18 江阴江化微电子材料股份有限公司 一种低张力ito蚀刻液及其制备方法

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