CN1334608A - Method for mfg. piezoelectric element - Google Patents

Method for mfg. piezoelectric element Download PDF

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Publication number
CN1334608A
CN1334608A CN01120620A CN01120620A CN1334608A CN 1334608 A CN1334608 A CN 1334608A CN 01120620 A CN01120620 A CN 01120620A CN 01120620 A CN01120620 A CN 01120620A CN 1334608 A CN1334608 A CN 1334608A
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Prior art keywords
reinforcement plate
piezoelectric
substrate
bonding agent
manufacture method
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CN01120620A
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Chinese (zh)
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杉园敦之
村上信治
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Hitachi Metals Ltd
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Sumitomo Special Metals Co Ltd
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  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

The present invention provides a method for manufacturing a piezoelectric element in which a substrate of piezoelectric material having high planarity and parallelism can be formed without having any adverse effect on the resonance characteristics thereof. The method for manufacturing a piezoelectric element comprises: a step for making trenches on the surface of a reinforcing plate, and a step for bonding the reinforcing plate to a substrate formed of piezoelectric material by introducing an adhesive having fluidity into the trenches of the reinforcing plate. Thus, the reinforcing plate can be bonded to the substrate formed by the piezoelectric material with predetermined strength. Also, by polishing the substrate formed by the piezoelectric material and which is bonded to said reinforcing plate, a substrate of piezoelectric material having high planarity and parallelism can be formed. Furthermore, since the adhesive layer can be dissolved simply by organic solvent, etc. the reinforcing plate can be peeled off in the state without applying any physical strength on the substrate formed of the piezoelectric material. Therefore, the resonance characteristics of the substrate formed of the piezoelectric material can be effectively kept.

Description

The manufacture method of piezoelectric element
Technical field
The present invention relates to the manufacture method of piezoelectric element, particularly reinforcement plate paste is being paid under the state on the substrate of being made by piezoelectric, the manufacture method of the piezoelectric element that the substrate of being made by piezoelectric is processed.
Background technology
In recent years, along with the increase and the high speed of the amount of information of electronic equipment, requiring to make the frequency of oscillation of electronic equipment and clock frequency is higher frequency.For this reason, require quartz crystal as an example of the piezoelectric element that forms by piezoelectric to have basic wave resonance frequency more than the 100MHz.
At this, be that resonance frequency is determined by thickness under the situation thicker, sliding quartz crystal.Therefore, have basic wave resonance frequency more than the 100MHz, the thickness of crystal slab must be reduced to below the 20 μ m in order to make crystal slab.In the case, if reduce the thickness of crystal slab, then produce easily damaged rough sledding.
At present,, adopt, crystal slab is worked into the method for specific thickness the reinforcement plate subsides being paid under the state on the crystal slab by bonding agent in order to prevent such rough sledding.More particularly, at first,, the crystal slab subsides are paid on the composition surface of the reinforcement plate that is coated with bonding agent, thus, crystal slab and reinforcement plate are engaged with after adhesive applicating is on the composition surface of reinforcement plate.In addition, pasting under the state of paying reinforcement plate and strengthening, crystal slab is being ground to the thickness of regulation.
But in described existing method, the flowability that is coated on the bonding agent on the composition surface of reinforcement plate usually is poor, so be difficult to be coated to equably on the composition surface of reinforcement plate.Thus, be difficult on the composition surface of reinforcement plate and crystal slab, form uniform bond layer.In the manner described, if the bond layer on the composition surface of crystal slab and reinforcement plate is not formed uniformly, then, when thickness according to the rules grinds the surface of crystal slab, have the flatness of crystal slab and the problem that the depth of parallelism reduces at state with reinforcement plate and crystal slab joint.For this reason, described existing method is difficult to form the crystal slab with higher flatness and depth of parallelism.
At present, open in the flat 8-46475 document, proposed following technology the spy, promptly not by bonding agent, and adopt power between the molecule, crystal slab is bonded on the surface as the silicon plate of reinforcement plate with physics mode, then, crystal slab is ground to the thickness of about 15 μ m.In the technology that is proposed, consider owing to do not adopt bonding agent, the situation that the flatness of the crystal slab that causes so can prevent the inhomogeneous of bond layer and the depth of parallelism reduce.
But, in the technology of this proposition,, silicon plate and crystal slab are engaged with physics mode owing to adopt power between the molecule, thus after the processing with the silicon plate when crystal slab is peeled away, crystal slab is applied the stress of physics.Thus, the resonance characteristics of crystal slab is changed.In addition, under the situation that adopts the power between the molecule, owing to do not bear the bond strength of the grinding of desired thickness, so also can't form crystal slab with the higher depth of parallelism and flatness.
Summary of the invention
One object of the present invention is to provide a kind of manufacture method of piezoelectric element, this method can form the substrate of being made by the piezoelectric with the higher depth of parallelism and flatness under the situation that the resonance characteristics that does not make the substrate of being made by piezoelectric (crystal slab) changes.
Another object of the present invention is to provide a kind of manufacture method of piezoelectric element, and this method can form thin and uniform bond layer between reinforcement plate and the substrate of being made by piezoelectric.
Another purpose of the present invention is to provide a kind of manufacture method of piezoelectric element, this method does not have in fact under the state of bond layer on the composition surface of reinforcement plate and the substrate made by piezoelectric, can engage with reinforcement plate with by the substrate that piezoelectric is made.
The manufacture method of piezoelectric element of the present invention comprises: the operation that forms recess on the surface of reinforcement plate; Import the recess of described reinforcement plate by having mobile bonding agent, with described reinforcement plate and the operation that engages by the substrate that piezoelectric is made.In addition, recess of the present invention refers to comprise the recess of groove shape, or the notions such as recess of small concaveconvex shape.
So, in formation recess on reinforcement plate, will have mobile bonding agent and import this recess, intensity engages with reinforcement plate with by the substrate that piezoelectric is made in accordance with regulations.In addition, by the substrate of being made by piezoelectric that is engaged on the reinforcement plate by described bonding agent is ground, can form the substrate of making by piezoelectric with the high depth of parallelism and high flatness.In addition, because bond layer can be by dissolvings easily such as organic solvents, even so after the substrate of being made by piezoelectric is processed, when the substrate that reinforcement plate is made from piezoelectric is peeled away, by bond layer is dissolved, still can apply under the situation of power of physics, reinforcement plate is peeled off at the substrate of piezoelectric not being made.Thus, the resonance characteristics that can prevent the substrate made by piezoelectric effectively changes.In the manner described, in the present invention, can under the situation that the resonance characteristics that does not make the substrate of being made by piezoelectric changes, form the substrate of making by piezoelectric with the high depth of parallelism and high flatness.
In the manufacture method of piezoelectric element of the present invention, the operation that described reinforcement plate and the substrate of being made by piezoelectric engage comprises following operation: under with described reinforcement plate and the baseplate-laminating of being made by piezoelectric and state that it is exerted pressure, import bonding agent from described recess, engage with described reinforcement plate with by the substrate that piezoelectric is made thus with flowability.So, make under reinforcement plate and the baseplate-laminating of making by piezoelectric and the state its pressurization, importing has mobile bonding agent, thus, under the state that is in contact with one another on the composition surface of the composition surface of reinforcement plate and the substrate of making by piezoelectric, have mobile bonding agent and be penetrated in this composition surface.Thus, between reinforcement plate and the substrate made by piezoelectric, can easily form thin and bond layer uniformly.
In the manufacture method of piezoelectric element of the present invention, the recess of described reinforcement plate forms according to the mode of the end of the bonding part between the substrate that extends to described reinforcement plate at least and made by piezoelectric.So, recess by reinforcement plate forms according to the mode of the end of the bonding part between the substrate that extends to described reinforcement plate at least and made by piezoelectric, even under the state with reinforcement plate and the baseplate-laminating made by piezoelectric, the recess of the end of the bonding part of the substrate of also can be easily making from reinforcement plate with by piezoelectric imports bonding agent.
In the manufacture method of piezoelectric element of the present invention, before the substrate that will make by piezoelectric and operation that reinforcement plate engages, also have respectively the composition surface of the substrate of making to the composition surface of described reinforcement plate with by piezoelectric to carry out the operation of mirror finish.So, mirror finish is carried out on composition surface by the substrate made to the composition surface of described reinforcement plate with by piezoelectric, the permeability of the bonding agent on the composition surface between the substrate that can improve reinforcement plate and be made by piezoelectric is so can be easily form uniform bond layer on the composition surface of reinforcement plate and the substrate made by piezoelectric.In addition, if mirror finish is carried out on two surfaces to the substrate made by piezoelectric, mirror finish is carried out on composition surface to reinforcement plate, then can adopt optical flat method (method of interference of light), observe the interference fringe on the composition surface be presented in the substrate made by piezoelectric and reinforcement plate.Thus, can measure the flatness of substrate when bonding of making by piezoelectric.According to this measurement result, can easily regulate the flatness of substrate when bonding of making by piezoelectric.
In the manufacture method of piezoelectric element of the present invention, described reinforcement plate comprises following material, and this material coefficient of thermal expansion coefficient is near the thermal coefficient of expansion of the substrate of being made by piezoelectric.So, according to comprising the mode that the material of its thermal coefficient of expansion near the thermal coefficient of expansion of the substrate of being made by piezoelectric constitutes reinforcement plate, can be when variations in temperature, prevent from effectively on the joint interface of reinforcement plate and the substrate made by piezoelectric, to produce thermal stress.Thus, the reduction of the flatness that causes of the distortion between the substrate that can prevent to make because of reinforcement plate with by piezoelectric.
In piezoelectric element manufacture method of the present invention, also comprise: after the substrate that will be made by piezoelectric and reinforcement plate engage, thickness of slab according to the rules, the operation that the surface of the substrate made by piezoelectric is ground; Then, by with the dissolving of described bonding agent, the operation that will peel away from reinforcement plate by the substrate that piezoelectric is made.So, can the substrate of being made by piezoelectric not applied under the situation of physical force, can easily the substrate of being made by piezoelectric peeled away from reinforcement plate by with the bonding agent dissolving.Consequently, can cause under the situation of adverse effect, will peel away from reinforcement plate by the substrate that piezoelectric is made in resonance characteristics not to the substrate made by piezoelectric.
In the manufacture method of piezoelectric element of the present invention, comprise: the operation that on the surface of reinforcement plate, forms recess; At the baseplate-laminating that will make by piezoelectric under the lip-deep state of described reinforcement plate, the sidepiece of the binding face of the substrate of making from reinforcement plate with by piezoelectric, import thermosetting the 1st bonding agent, and by having the recess importing of the 2nd mobile bonding agent from described reinforcement plate, the operation that the substrate made from described reinforcement plate with by piezoelectric engages, under the state that reinforcement plate and the substrate that formed by piezoelectric are engaged, size according to the rules, to cut off by the substrate that piezoelectric is made, form the operation of patch of piezoelectric material thus; By having mobile the 2nd bonding agent dissolving, will partly not peel off by the reinforcement plate that the 1st bonding agent is engaged on the patch of piezoelectric material, only will be engaged in the operation that the reinforcement plate on the patch of piezoelectric material is partly peeled off by the 2nd bonding agent.
So, can easily form the patch of piezoelectric material that combines with a part of surface of reinforcement plate.Thus, when transporting patch of piezoelectric material, can keep this reinforcement plate part easily it to be transported.Consequently, even under the situation that the size that makes patch of piezoelectric material reduces, also can easily carry out the disposal of patch of piezoelectric material.
In the manufacture method of piezoelectric element of the present invention, the lip-deep recess that is formed at described reinforcement plate comprises the pore on the composition surface that is formed at reinforcement plate at least.
So, by on the composition surface of reinforcement plate, forming pore at least as recess, if will have the pore that mobile bonding agent imports this reinforcement plate surface, then, can easily engage with reinforcement plate with by the substrate that piezoelectric is made by importing the bonding agent of this pore.In the case, because bonding agent is positioned at the pore on reinforcement plate surface,, engage with reinforcement plate with by the substrate that piezoelectric is made so can on the composition surface of reinforcement plate and the substrate of making by piezoelectric, not have in fact under the state of bond layer.Thus, to being engaged in the substrate of making by piezoelectric on the reinforcement plate when grinding, do not produce the depth of parallelism of the substrate of making by piezoelectric that causes by bond layer in uneven thickness and the rough sledding that flatness reduces.Consequently, can form the substrate of making by piezoelectric with the higher depth of parallelism and Geng Gao flatness.In addition, because bonding agent can be easily by dissolvings such as organic solvents, even so after the substrate of being made by piezoelectric is processed, under the situation that reinforcement plate and the strippable substrate of being made by piezoelectric are opened, by bonding agent is dissolved, can on not to the substrate of making by piezoelectric, apply under the situation of physical force, reinforcement plate is peeled off.Thus, the resonance characteristics that can prevent the substrate made by piezoelectric effectively changes.So, can under the situation that the resonance characteristics that does not make the substrate of being made by piezoelectric changes, form and form substrate by piezoelectric with the higher depth of parallelism and Geng Gao flatness.
In the manufacture method of piezoelectric of the present invention, the reinforcement plate with pore comprises the reinforcement plate of being made by porous ceramic.So, by adopting the reinforcement plate of making by porous ceramic, on the surface of reinforcement plate, have many pores.Thus,, then on the composition surface of reinforcement plate and the substrate made by piezoelectric, do not have in fact under the state of bond layer, can easily engage with reinforcement plate with by the substrate that piezoelectric is made if bonding agent is imported in this many pore.
In the manufacture method of piezoelectric element of the present invention, the reinforcement plate that is formed by porous ceramic comprises by being selected from porous matter ferrite, the reinforcement plate that a kind of material in porous matter aluminium oxide and the porous matter carbon forms.Because the reinforcement plate that is formed by porous ceramic adopts described existing material, is the material of reinforcement plate so can easily the material of selling on the market be migrated.
In the manufacture method of piezoelectric element of the present invention, form the ferritic operation of described porous matter and also comprise: the operation of ferrite forming body being carried out sintering; After to described ferrite forming body sintering, it is carried out accurately machined operation.Thus, can easily form porous matter ferrite.
In the manufacture method of piezoelectric element of the present invention, the ferritic stomatal frequency of porous matter is at 4000/mm 2More than, 10000/mm 2In the following scope.So, can prevent the reduction of adhesive strength, and can prevent the depth of parallelism of the substrate made by piezoelectric and the situation that flatness causes adverse effect.That is, if the ferritic stomatal frequency of porous matter less than 4000/mm 2, then since the quantity of pore seldom, the amount of imbedding the bonding agent in the pore also reduces.Consequently, produce the rough sledding that adhesive strength reduces.In addition, if the ferritic stomatal frequency of porous matter surpasses 10000/mm 2, then the quantity of pore is more, and is densely distributed, and its diameter is identical with bigger hole, so the profile pattern of reinforcement plate reduces.Thus, the substrate that is formed by piezoelectric that is adhered on the reinforcement plate is added man-hour, producing the depth of parallelism of the substrate of making by piezoelectric and the rough sledding that flatness reduces.In order to prevent these rough sledding, the ferritic stomatal frequency of porous matter is at 4000/mm 2More than, 10000/mm 2In the following scope.
In the manufacture method of piezoelectric element of the present invention, the average pore size of the ferritic pore of porous matter is less than 5 μ m.So, can prevent that the depth of parallelism to the substrate made by piezoelectric from causing the situation of adverse effect.That is,, be positioned at the situation that the substrate portion of being made by piezoelectric on the pore of reinforcement plate deforms if the average pore size of the ferritic pore of porous matter greater than 5 μ m, then when the substrate of being made by piezoelectric grinds, has the pressing force because of grinding stone.In the case, the rough sledding that has the depth of parallelism decline of the substrate of making by piezoelectric.In order to prevent such rough sledding, the average pore size of the ferritic pore of porous matter is set in below the 5 μ m.
The manufacture method of piezoelectric element of the present invention comprises: formation on composition surface, has the operation of the reinforcement plate of pore at least; Bonding agent is imported the operation of the pore of described reinforcement plate; The operation of the substrate that will make by piezoelectric and the surface adhesion of described reinforcement plate; The operation that the substrate of being made by piezoelectric that is adhered on the reinforcement plate is ground.
So, by bonding agent being imported in the pore of reinforcement plate, can easily engage by the bonding agent that imports in this pore with reinforcement plate with by the substrate that piezoelectric is made.In the case, because bonding agent is positioned at the pore on reinforcement plate surface,, engage with reinforcement plate with by the substrate that piezoelectric is made so can on the composition surface of reinforcement plate and the substrate of making by piezoelectric, not have in fact under the state of bond layer.Thus, to the depth of parallelism that is engaged in substrate on the reinforcement plate, that make by piezoelectric when grinding, can produce the substrate of making by piezoelectric that causes by the uneven thickness of bond layer and the rough sledding that flatness descends.Consequently, can form the substrate of making by piezoelectric with the higher depth of parallelism and Geng Gao flatness.In addition, because bonding agent can be easily by dissolvings such as organic solvents, even so after the substrate of being made by piezoelectric is processed, under the situation that reinforcement plate is peeled off from the substrate of being made by piezoelectric, still can be by bonding agent is dissolved, the substrate of being made by piezoelectric not being applied under the situation of physical force, reinforcement plate is peeled off.Thus, the resonance frequency that can prevent the substrate made by piezoelectric effectively changes.
In the manufacture method of piezoelectric element of the present invention, described importing bonding agent operation comprises: in the pore of bonding agent being delivered to reinforcement plate and after on the surface of reinforcement plate, and the operation that the bonding agent of part beyond the pore in the reinforcement plate is removed.So, can easily bonding agent only be embedded in the pore place of reinforcement plate.Thus,, can on the composition surface of reinforcement plate and the substrate of making by piezoelectric, not have in fact under the state of bond layer, engage with reinforcement plate with by the substrate that piezoelectric is made by imbedding the bonding agent of pore.
In the manufacture method of piezoelectric element of the present invention, the reinforcement plate with pore has the size that a plurality of substrates of being made by piezoelectric can be set thereon.So, can have on the reinforcement plate of pore, the substrate of being made by a plurality of piezoelectrics is being set, thus, needn't adopt mounting table.So, produce the rough sledding of distortion between reinforcement plate that heat in the time of can eliminating the substrate bonding of making because of reinforcement plate with by piezoelectric causes and the mounting table, and the flatness and the depth of parallelism that also can not produce the substrate of being made by piezoelectric that causes because of the distortion between reinforcement plate and the mounting table descend.Consequently, can further improve the flatness and the depth of parallelism of the substrate of making by piezoelectric.
In the manufacture method of piezoelectric element of the present invention, the described substrate of being made by piezoelectric comprises crystal, and lanthanum is sowed Si oxide (Langasite:La 3Ga 5Si 5O 14) in any.Owing to adopt the substrate of making by such piezoelectric, so can easily form flatness and the good piezoelectric element of the depth of parallelism.
Description of drawings
Fig. 1 is the stereogram of manufacture method that is used to illustrate the quartz crystal of the present invention's the 1st embodiment;
Fig. 2 is the stereogram of manufacture method that is used to illustrate the quartz crystal of the present invention's the 1st embodiment;
Fig. 3 is the stereogram of manufacture method that is used to illustrate the quartz crystal of the present invention's the 1st embodiment;
Fig. 4 is the stereogram of manufacture method that is used to illustrate the quartz crystal of the present invention's the 1st embodiment;
Fig. 5 is the stereogram of manufacture method that is used to illustrate the quartz crystal of the present invention's the 1st embodiment;
Fig. 6 is the stereogram of manufacture method that is used to illustrate the quartz crystal of the present invention's the 1st embodiment;
Fig. 7 is the stereogram of manufacture method that is used to illustrate the quartz crystal of the present invention's the 1st embodiment;
Fig. 8 is the stereogram of manufacture method that is used to illustrate the quartz crystal of the present invention's the 1st embodiment;
Fig. 9 is the stereogram of manufacture method that is used to illustrate the quartz crystal of the present invention's the 1st embodiment;
Figure 10 is the cutaway view of manufacture method that is used to illustrate the quartz crystal of the present invention's the 2nd embodiment;
Figure 11 is the cutaway view of manufacture method that is used to illustrate the quartz crystal of the present invention's the 2nd embodiment;
Figure 12 is the cutaway view of manufacture method that is used to illustrate the quartz crystal of the present invention's the 2nd embodiment;
Figure 13 is the cutaway view of manufacture method that is used to illustrate the quartz crystal of the present invention's the 2nd embodiment;
Figure 14 is the cutaway view of manufacture method that is used to illustrate the quartz crystal of the present invention's the 2nd embodiment;
Figure 15 is the stereogram of manufacture method that is used to illustrate the quartz crystal of the present invention's the 2nd embodiment;
Figure 16 is the stereogram of manufacture method that is used to illustrate the quartz crystal of the present invention's the 3rd embodiment;
Figure 17 is the amplification view of the reinforcement plate of manufacture method shown in Figure 16;
Figure 18 is the stereogram of manufacture method that is used to illustrate the quartz crystal of the present invention's the 3rd embodiment;
Figure 19 is the amplification view of the reinforcement plate of manufacture method shown in Figure 180;
Figure 20 is the amplification view of manufacture method that is used to illustrate the quartz crystal of the present invention's the 3rd embodiment;
Figure 21 is the stereogram of manufacture method that is used to illustrate the quartz crystal of the present invention's the 3rd embodiment;
Figure 22 is the stereogram of manufacture method that is used to illustrate the quartz crystal of the present invention's the 3rd embodiment;
Figure 23 is the stereogram of manufacture method that is used to illustrate the quartz crystal of the present invention's the 3rd embodiment;
Figure 24 is the stereogram of manufacture method that is used to illustrate the quartz crystal of the present invention's the 3rd embodiment;
Figure 25 is the stereogram of manufacture method of quartz crystal that is used to illustrate the variation of the present invention's the 3rd embodiment.
Specific embodiments
With reference to the accompanying drawings, embodiments of the invention are described.
(the 1st embodiment)
Below with reference to figure l~Fig. 9, the manufacture method of the quartz crystal of the 1st embodiment is retouched State. In addition, quartz crystal is an example of " piezoelectric element " of the present invention.
At first, as shown in Figure 1, prepare to be of a size of the reinforcement plate 1 of 15mm * 15mm * 1mm. The thermal expansion of the crystal slab 2 that this reinforcement plate 1 preferably will be described near the back by thermal coefficient of expansion The material of coefficient is made. Such as, in the present embodiment, adopt by Al2O 3What-TiC formed increases Strong plate 1.
Then, as shown in Figure 2, form a plurality of groove 1a at the composition surface of reinforcement plate 1. This groove 1a is rectangular, and its width is 0.1mm, and the degree of depth is 0.2mm. This groove 1a is according to extending to enhancing The mode of two ends of plate 1 forms. In addition, this groove 1a be " recess " of the present invention one Individual example.
Then, as shown in Figure 3, prepare to be of a size of the crystal slab of 12mm * 12mm * 0.2mm 2. In addition, crystal slab 2 is an example of " substrate of being made by piezoelectric " of the present invention. The outside of the crystal slab 2 of this state and inner face are wrinkle shape surface.
From then on state as shown in Figure 4, adds by minute surface is carried out on two surfaces of crystal slab 2 The worker is processed into 0.07mm with the thickness of this crystal slab 2, and with the outside of crystal slab 2 and in Face is finish-machined to minute surface. This mirror finish is preferably thick according to the surface on two surfaces of crystal slab 2 The Ra value (center line average roughness) of rugosity is carried out less than the mode of 0.003 μ m. This is Because if the Ra value of the surface roughness of crystal slab 2 greater than 0.003 μ m, then is difficult to obtain Required resonant frequency, and be difficult between crystal slab 2 and reinforcement plate 1, form uniformly Bond layer.
Afterwards, as shown in Figure 5, on the mounting table 100 of disc-shape, arrange a plurality of ( Present embodiment is 3) reinforcement plate 1. Under this state, minute surface is carried out on the surface of reinforcement plate 1 Processing. The mirror finish of this reinforcement plate 1 is preferably according to the Ra value of the surface roughness of reinforcement plate 1 Mode less than 0.01 μ m is carried out. Its reason is: if the surface roughness of reinforcement plate 1 The Ra value greater than 0.01 μ m, then since between this reinforcement plate 1 and crystal slab 2, form sticking Connect in the agent layer, produce fluctuating (heaving), so be difficult to form uniform bond layer. Phase therewith Right, less than 0.01 μ m, bonding agent is towards enhancing such as the Ra value of the surface roughness of reinforcement plate 1 The permeability on the surface of plate 1 improves, thus can be easily between crystal slab 2 and reinforcement plate 1, Form uniform bond layer.
In the manner described, after the composition surface to reinforcement plate 1 carries out mirror finish, such as Fig. 6 Shown in, on the composition surface of reinforcement plate 1, two surfaces have been carried out the crystal of mirror finish Plate 2 is fitted, is pressurizeed. This pressurization is with 20 * 104~30×10 4Pa exerts pressure to water Press at the top of brilliant plate 2. Under this state, by distributor etc., from reinforcement plate 1 Groove 1a injects the bonding agent of wax system. Then, at the state that is pressurizeed in the top of crystal slab 2 Lower, under about 100 ℃ temperature, heated about 12 hours.
In addition, the bonding agent of wax system adopts viscosity lower, has mobile bonding agent. In the present embodiment, (Phthalic glue: daily use chemicals Seiko society gives birth to the O-phthalic colloid by acetone in employing Produce) dissolve and the bonding agent of formation. More particularly, adopting concentration is the adjacent benzene two of 17 quality % The first colloid, it is to mix with acetone and form according to 1: 5 mixing ratio. In addition, adjacent benzene two The concentration of first colloid is preferably in the scope of 15~20 quality %. If the O-phthalic colloid is dense Degree is less than 15 quality %, because the composition of bonding agent seldom, so adhesive strength reduces. In addition, If the concentration of O-phthalic colloid is greater than 20 quality %, then mobile variation thus, produces Bonding agent is difficult to equably scattered rough sledding. Thus, the concentration of O-phthalic colloid is established Fix on more than the 15 quality %, better in the scope below the 20 quality %.
At this, in the 1st embodiment, mirror finish is carried out on two surfaces of crystal slab 2, And the Surface Machining of reinforcement plate 1 is become minute surface, so when reinforcement plate 1 and crystal slab 2 are bonding, Can pass through the optical flat method, observe the joint interface of being presented between crystal slab 2 and the reinforcement plate 1 On interference fringe. Thus, can measure the flatness of crystal slab 2 when bonding. According to this survey Decide the result, can easily according to the mode that forms higher flatness, adjust the sticking of crystal slab 2 Connect state. Also have, described " optical flat method " instigates the interference of light striped to be shown in the mensuration table On the face, measure the method for flatness according to this interference fringe.
Engaging after the operation, such as Fig. 7 between reinforcement plate shown in Figure 61 and crystal slab 2 Shown in, with under reinforcement plate 1 and the state that crystal slab 2 engages, by the table to crystal slab 2 Face grinds, and the thickness of crystal slab 2 is worked into thickness below the 20 μ m. In this grinding In the operation, at first, by FO#3000 abrasive particle (particle diameter is in the scope of 3~6 μ m), advance The row rough lapping. Then, with cerium oxide abrasive particle (average grain diameter is 0.5 μ m), it is carried out essence Grind. When this grinds, take the end face of reinforcement plate 1 as benchmark, use electronic gauge, measure Apart from the height of the end face of crystal slab 2, the thickness of control crystal slab 2.
By this grinding, in the present embodiment, can form flatness less than 0.2 μ m/2mm (P-V Value), the depth of parallelism has the crystal slab of higher flatness and the depth of parallelism less than 0.1 μ m/4mm 2. Thus, can form the crystal slab with good resonance characteristics 2 that does not produce secondary undulation.
Then, shown in the line of the single-point among Fig. 8, by using the resin system grinding stone with crystal slab 2 Cut off, then, with bonding with between reinforcement plate 1 and the crystal slab 2 of organic solvent (acetone) Agent (O-phthalic colloid) dissolving is peeled away crystal slab 2 thus from reinforcement plate 1. By This obtains quartz plate 2a shown in Figure 9. In addition, quartz plate 2a is " piezoelectricity material of the present invention Tablet " example.
In the manufacture method of the quartz crystal of the 1st embodiment, as mentioned above, at reinforcement plate 1 In form groove 1a, by perfusion from this groove 1a have mobile bonding agent (17 quality %'s The O-phthalic colloid), the mobile bonding agent that has that imports from groove 1a oozes easily and equably Thoroughly in the composition surface of reinforcement plate 1 and crystal slab 2. Thus, can be at reinforcement plate 1 and crystal slab 2 The composition surface on, be formed uniformly bond layer. In addition, according to making by described uniformly sticking Connect the mode that the bonding crystal slab of agent layer and reinforcement plate forms specific thickness, it ground, Thus, can form the crystal slab with the higher depth of parallelism and flatness.
In addition, after size is cut off according to the rules with crystal slab 2, by with the bonding agent dissolving, Crystal slab 2 is not being applied in the situation of physical force, can be easily with crystal slab 2 from reinforcement plate 1 On peel away. Consequently, can the resonance characteristics of crystal slab 2 not caused adverse effect In the situation, crystal slab 2 and reinforcement plate are peeled away.
In addition, by in that reinforcement plate 1 and crystal slab 2 fitted to the state of their pressurizations, Importing has mobile bonding agent (the O-phthalic colloids of 17 quality %), at reinforcement plate 1 The composition surface and the state that is in contact with one another of the composition surface of crystal slab 2 under owing to will have flowability Bonding agent import on this composition surface, so can easily form thinner, uniform bond layer.
Have again, in described the 1st embodiment, by with the material (Al of thermal coefficient of expansion near the thermal coefficient of expansion of crystal slab 22O 3-TiC) form reinforcement plate 1, in the situation of variations in temperature, Can effectively prevent from producing thermal stress on the composition surface of reinforcement plate 1 and crystal slab 2. Like this, Can prevent the situation of the flatness decline that the distortion between reinforcement plate 1 and the crystal slab 2 causes.
(the 2nd embodiment)
Below with reference to Figure 10~Figure 15, the manufacture method of the 2nd embodiment is described.
At first, in the 2nd embodiment, through with the 1st embodiment's of Fig. 1~shown in Figure 5 After the identical method of manufacture method, carry out manufacture method shown in Figure 10. Shown in Figure 10 In the manufacture method, on the composition surface of the reinforcement plate 11 that is provided with a plurality of groove 11a, applying water Under the state of brilliant plate 12, it is pressurizeed. This pressurization is identical with the 1st embodiment, by with 20 * 104~30×10 4Exerting pressure of Pa pressed the top of crystal slab 12. In addition, Groove 11a is an example of " recess " of the present invention, and crystal slab 12 is of the present invention " by pressure The substrate that electric material is made " example.
Under this state, with the perpendicular direction of the bearing of trend of groove 11a, from reinforcement plate 11 Side end perfusion thermmohardening bonding agent with the composition surface of crystal slab 12. Thus, thermmohardening is bonding Agent is permeated in the surface of reinforcement plate part 11c. This thermmohardening bonding agent such as, adopt ABLE BOND (production of ABLE STIK company). Then, with the 1st embodiment's shown in Figure 6 Manufacture method is identical, from the groove 11a of reinforcement plate 11, the perfusion wax be bonding agent (17 quality %'s The O-phthalic colloid). Thus, the reinforcement plate of O-phthalic colloid infiltration between groove 11a The surface of part 11b. Then, exerting pressure to the top pressurization of crystal slab 12 by described State under, under about 100 ℃ temperature, it was heated about 12 hours. Thus, Crystal slab 12 is engaged on the reinforcement plate 11.
Then, as shown in figure 11, grind by the end face to crystal slab 12, with this water Brilliant plate 12 is worked into the thickness less than 20 μ m. The grinding condition of this moment and the phase of the 1st embodiment With. Then, as shown in figure 12, size is according to the rules cut off crystal slab 12.
Afterwards, as shown in figure 13, from the inner face side of reinforcement plate 11, reinforcement plate 11 is cut to Single dashdotted position. Thus, as shown in figure 14, with quartz plate 12a with by the reinforcement plate part The part that 11b and 11c form disconnects. By part shown in Figure 14 is soaked in the acetone, Make between quartz plate 12a and reinforcement plate part 11b and the wax of groove 11a inside system sticking Connect agent (O-phthalic colloid) dissolving. In addition, be positioned at quartz plate 12a and reinforcement plate part 11c Between the thermosetting bonding agent not by acetone solution. Thus, can be only with reinforcement plate part 11b 12a peels away from quartz plate. Consequently, form shown in Figure 15, at quartz plate 12a The part on surface, only engage the shape that reinforcement plate part 11c is arranged. In addition, quartz plate 12a is an example of " patch of piezoelectric material " of the present invention.
In the 2nd embodiment, by described manufacture method, can easily be formed on the surface A part engage the quartz plate 12a that reinforcement plate part 11c is arranged. Thus, transporting quartz plate During 12a, can according to the mode that keeps this reinforcement plate part 11c, easily transport. Its knot Really be, even in the littler situation of the size of quartz plate 12a, still can be easily to quartz plate 12a disposes.
(the 3rd embodiment)
Below with reference to Figure 16~Figure 24, the manufacture method of the 3rd embodiment is described.
In the manufacture method of the 3rd embodiment, reinforcement plate 21 adopts the surface to form a plurality of pores Mn-Zn be the Porous ferrite. This Mn-Zn is that the ferritic formation method of Porous is: At first, at the Fe of 65~75 quality %2O 3, the MnO of 15~20 quality %, and 10~15 Among the ZnO of quality %, add pure water and Alon (ARON), they are mixed. Afterwards, This mixture is calcined. This calcining is carried out about 4~6 under about 850~900 ℃ temperature Hour. Then, by ball mill, the mixture of calcining is ground into small of 1~3 μ m Grain. Then, add bonding agent, make its drying, the powder that forms good fluidity (forms Grain). In addition, by with forcing press it being compressed, form the compression body of regulation shape. In addition, Under about 1200~1300 ℃ high temperature, it is carried out sintering. At last, by carrying out by grinding The fine finishining of mill, adjusting Mn-Zn is the ferritic size and dimension of Porous.
In addition, when forming seldom ferrite of pore with high density, usually, behind sintering, By HIP (hot rolling hydrostatic head), it is carried out densification process. But, in basis the 3rd Among the embodiment since take the Porous ferrite that forms increased number of stomata as purpose, so do not carry out HIP Densification process.
In the manner described, be the reinforcement plate that the Porous ferrite consists of forming by Mn-Zn After 21, as shown in figure 16, reinforcement plate 21 is positioned on the mounting table 100 of disc-shape. Under this state, mirror finish is carried out on the surface of reinforcement plate 21. The minute surface of this reinforcement plate 21 Processing is preferred identical with described the 1st embodiment, according to the Ra of the surface roughness of reinforcement plate 21 Value is processed less than the mode of 0.01 μ m. If will be that amplify in the cross section of the reinforcement plate 21 that forms of Porous ferrite by the described Mn-Zn that carries out mirror finish, to its observation, then form Figure 17 Shown shape. With reference to Figure 17, on the surface of reinforcement plate 21, be provided with a plurality of crystal grain 21a. In addition, between this crystal grain 21a, form pore 21b. This pore 21b is of the present invention " recessed Section " example.
In addition, the density of the ferritic pore 21b of Porous is preferably at 4000/mm2More than, 10000/mm2In the following scope. Its reason is as follows. That is, if Porous is ferritic The density of pore 21b is less than 4000/mm2, because the minimizing of the quantity of pore 21b, so imbed The amount of the bonding agent among the pore 21b also reduces. Consequently, producing adhesive strength reduces not Sharp situation. In addition, if the density of the ferritic pore 21b of Porous greater than 10000/mm2, Because the quantity of pore 21b increases, and is densely distributed, so the planarization on the surface of reinforcement plate 21 falls Low. Thus, in method described later, the crystal slab 23 that is adhered on the reinforcement plate 21 is being advanced When row grinds, produce the depth of parallelism of crystal slab 23 and the rough sledding that flatness reduces. The 3rd Among the embodiment, in order to prevent these rough sledding, the density in the ferritic hole of Porous preferably exists 4000/mm2More than, 10000/mm2In the following scope.
Also have, the surperficial average pore size of the ferritic pore 21b of Porous is preferably less than 5 μ m. Its reason is as follows. That is, if the average pore size of the ferritic pore 21b of Porous greater than 5 μ m, When in method described later, crystal slab 23 being ground, have following situation, because grinding stone The effect of pressing force, the part that is arranged in the crystal slab 23 on the pore 21b of reinforcement plate 21 falls In the blowhole and deform. In the case, the depth of parallelism that produces crystal slab 23 reduces not Sharp situation. In order to prevent such rough sledding, in the 3rd embodiment, best Porous iron The average pore size of the pore 21b of oxysome is preferably less than 5 μ m.
After the mirror finish of Figure 16 and reinforcement plate 21 shown in Figure 17, such as Figure 18 and Figure 19 Shown in, adopt bristle etc., on the composition surface of reinforcement plate 21, the bonding agent 22 of coating of wax system. The bonding agent 22 of this wax system is identical with the 1st embodiment, adopts viscosity lower, has flowability Bonding agent. That is, adopting concentration is the O-phthalic colloid of 17 quality %, and it is according to 1: 5 Mixing ratio mix with acetone and form. On reinforcement plate 21, applying described concentration is 17 Quality % has an O-phthalic colloid (bonding agent 22) than high fluidity. As shown in figure 19, This bonding agent 22 is imbedded the pore 21b inside on the surface of reinforcement plate 21, it is according to the rules thick Degree is formed on the surface of reinforcement plate 21.
Also have, formed by O-phthalic colloid by acetone diluted in coating, have mobile The property bonding agent 22 after, acetone composition evaporation. Thus, by the O-phthalic colloid form bonding Agent 22 is in solid state.
So, after bonding agent 22 solidifies, by bonding agent 22 is ground, remove the position Lip-deep bonding agent 22 in reinforcement plate 21. Thus, as shown in figure 20, bonding agent 22 only Only imbed the pore 21b inside on the surface of reinforcement plate 21, the reinforcement plate 21 beyond pore 21b The surface, not residual bonding agent 22.
After this, as shown in figure 21, on the composition surface of reinforcement plate 21, carry out on superimposed two sides The crystal slab 23 of mirror finish and its pressurization is bonding. This pressurization is bonding to be passed through with 20 * 104~ 30×10 4Pa exerts pressure, and the top of crystal slab 23 is pressed, simultaneously about 100 ℃ temperature under, it was heated about 3~12 hours. Thus, imbed the surface of reinforcement plate 21 Pore 21b in bonding agent 22 again be in molten state, by this bonding agent 22, will increase Strong plate 21 engages with crystal slab 23. At this, preferably be about 10~12 hours heat time heating time. Its reason is: can not produce the water that is caused by the shrinkage factor difference of bonding agent, crystal slab Realize engaging in the situation of brilliant plate distortion. In addition, crystal slab 23 is of the present invention " by the piezoelectricity material The substrate made of material " example.
In the manner described, after being engaged in crystal slab 23 on the reinforcement plate 21, such as Figure 22 institute Show, under reinforcement plate 21 and state that crystal slab 23 engages, the surface of crystal slab 23 is carried out Grind. Thus, the thickness of crystal slab 23 is worked into thickness less than 20 μ m. This operation Grinding condition is identical with described the 1st embodiment.
By this grinding, in the 3rd embodiment, can form flatness less than 0.2 μ m/2mm (P-V Value), the depth of parallelism is less than the higher flatness of having of 0.1 μ m/4mm and the crystal slab of the depth of parallelism 23. Thus, can form the good crystal slab 23 of resonance characteristics that does not produce secondary undulation.
After this, shown in the line of the single-point among Figure 23, for example, with the resin system grinding stone it is being cut Have no progeny, by organic solvent (acetone), will imbed between reinforcement plate 21 and the crystal slab 23 Bonding agent among the pore 21b (O-phthalic colloid) dissolving. Thus, crystal slab 23 and enhancing Plate 21 is peeled away. Consequently, obtain quartz plate 23a shown in Figure 24. In addition, quartz plate 23a is an example of " patch of piezoelectric material " of the present invention.
In the 3rd embodiment, in the manner described, by bonding agent being imported reinforcement plate 21 Pore 21b, by the bonding agent 22 that imports this pore 21b, can be easily with reinforcement plate 21 Hes Quartz plate 23 engages. In the case, because bonding agent 22 only is positioned at pore 21b inside, So on the composition surface of reinforcement plate 21 and crystal slab 23, there is not in fact the state of bond layer Lower, reinforcement plate and crystal slab are engaged. Thus, to being engaged in the crystal slab on the reinforcement plate 21 23 can not take place when grinding owing to the crystal slab that causes in uneven thickness of bond layer The situation that the depth of parallelism and flatness reduce. Consequently, can form and have the higher depth of parallelism and The crystal slab 23 of high flatness.
In addition, identical with described the 1st embodiment in the 3rd embodiment, because bonding The dissolvings such as organic solvent (acetone) can be easily passed through in agent (O-phthalic colloid) 22, even After to crystal slab 23 processing, in the situation that reinforcement plate 21 and crystal slab 23 are peeled off, by With bonding agent 22 dissolvings, can crystal slab 23 not being acted in the situation of physical force, peel off Reinforcement plate 21. Consequently, can prevent effectively that the resonance characteristics of crystal slab 23 from changing.
In addition, in the 3rd embodiment, compare with described the 1st embodiment, can make crystal The material efficiency of plate improves. That is, in the 1st embodiment, in operation shown in Figure 7, When grinding being engaged in crystal slab 2 on the reinforcement plate 1, be positioned at the crystal slab 2 on the groove 1a In the situation that may deform. Thus, in operation shown in Figure 8, cutting off crystal slab 2 The time, the part part in addition that will be positioned on the groove 1a is used as quartz plate 2a. Therewith relative, Among 3 embodiment, owing in reinforcement plate 21, do not have groove, in operation shown in Figure 23, cutting When going out crystal slab 23, can be with whole parts as quartz plate 23a (with reference to Figure 24). Its knot Really be, in the manufacture method of the 3rd embodiment, compare with the 1st embodiment, can make crystal The material efficiency of plate 23 improves.
Also have, in the 3rd embodiment, bonding agent (O-phthalic colloid) 22 importings are being increased After on the pore 21b inside of strong plate 21 and the surface of reinforcement plate 21, by grinding, removal increases The bonding agent 22 of part beyond the pore 21b of strong plate 21 can be easily with bonding agent 22 only Imbed among the pore 21b of reinforcement plate 21. Thus, by imbedding the bonding agent of pore 21b, Do not have in fact on the composition surface of reinforcement plate 21 and crystal slab 23 under the state of bond layer, can Reinforcement plate 21 and crystal slab 23 are engaged.
Have again, in the 3rd embodiment, in that only the pore 21b inside at reinforcement plate 21 is residual Under the state of bonding agent 22, pressurize bonding to reinforcement plate 21 and crystal slab 23. In these feelings Under the condition, reinforcement plate 21 and crystal slab 23 being pressurizeed when bonding, if at reinforcement plate 21 And have the gap between the crystal slab 23, then also have the bonding agent 22 of pore 21b inside to be exuded to The situation of the joint interface of reinforcement plate 21 and crystal slab 23. But, even ooze at bonding agent 22 Go out in the situation of joint interface the thickness of the bond layer that is formed by the bonding agent 22 that oozes out Minimum, only be below the 0.1 μ m. Thus, can not be created in reinforcement plate 21 and crystal slab 23 The joint interface place exist thicker bond layer such, make crystal slab 23 after the processing parallel So the rough sledding that degree and flatness reduce is no problem.
In addition, this time disclosed embodiment only is that schematically it should be considered as nonrestrictive. Scope of the present invention is not limited by described embodiment, and by the model of asking for protection of claim Enclose and provide, this scope comprises implication and the model that the scope of asking for protection with claim is equal in addition Whole variations in enclosing.
Such as, in the described the 1st and the 2nd embodiment, as the material of reinforcement plate, adopt its thermal coefficient of expansion near the Al of the thermal coefficient of expansion of crystal slab2O 3-TiC, still, the present invention is not Be limited to this material, also can use thermal coefficient of expansion to keep off the material of the thermal coefficient of expansion of crystal slab. Such as, can consider to adopt crystal, aluminium oxide, crystal glass etc. In addition, also can adopt its heat The coefficient of expansion is near the material of crystal slab. Such as, also can adopt Mn-Zn system or Ni-Zn system Ferrite. If adopt the higher Ferrite Material of processability, then have easily to reinforcement plate The advantage of processing.
In addition, in described the 1st~the 3rd embodiment, as having mobile bonding agent, adopt Be the O-phthalic colloid of 17 quality % with its concentration, but the invention is not restricted to this, as long as be Have mobile bonding agent, even then in the situation of the bonding agent that adopts other, still can obtain Get identical effect. Such as, also can according to the mode of not using solvent, use same as before pure wax (alcowax) (production of daily use chemicals Seiko society). In addition, as of the present invention, have Mobile bonding agent under 100 ℃ condition, adopts kinematic viscosity in 10~30cp scope Interior bonding agent is better.
Also have, in the described the 1st and the 2nd embodiment, the groove of reinforcement plate is rectangular, but this Invention is not limited thereto shape, even be V-shape, or the groove of U word shape or other shape Situation under, still can obtain identical effect. In addition, also can on the surface of reinforcement plate, establish Be equipped with small jog, import bonding agent from this recess. In the present invention, with such groove Be referred to as " recess " with the recess in the small jog.
Have, in the described the 1st and the 2nd embodiment, the groove of reinforcement plate is according to extending to enhancing again The mode of two ends of plate connects, still, in the present invention, needn't be necessarily according to extending to The mode of two ends of reinforcement plate connects. That is, the groove of reinforcement plate can extend to reinforcement plate at least End with the bonding part of crystal slab. In this manner, even with reinforcement plate and crystal slab Under the state of fitting, still can be easily recessed from the end of the bonding part of reinforcement plate and crystal slab Section imports bonding agent.
In addition, in the 3rd embodiment, as reinforcement plate 21, adopting Mn-Zn is Porous Ferrite, but the invention is not restricted to this, and also can adopt Ni-Zn is the Porous ferrite. In addition Outward, even in the situation that adopts Porous ferrite porous ceramic in addition, still can obtain Identical effect. Such as, also can adopt Porous aluminium oxide or Porous carbon. In addition, if Be not limited to porous ceramic, and adopt at the leachy reinforcement plate of composition surface tool, can obtain phase Effect together.
In addition, in described the 3rd embodiment, will have mobile bonding agent (17 quality The O-phthalic colloid of %) be coated on the surface of reinforcement plate 21 after, by grinding, remove pore Bonding agent 22 beyond the 21b, thus, only in pore 21b inside, residual have a bonding agent 22, But the invention is not restricted to this situation, coating that also can be by bonding agent and grind beyond other Method, in pore 21b inside, residual have a bonding agent 22.
Also have, in described the 1st~the 3rd embodiment, as an example of the substrate of being made by piezoelectric, what provide is the example that adopts crystal slab, but the invention is not restricted to this situation, even by beyond the crystal, such as, lanthanum is sowed Si oxide (La3Ga 5SiO 14),LT(LiTaO 3: lithium tantalate), LN (LiNbO3: lithium niobate) etc. the substrate that piezoelectric is made, still can obtain Get identical effect.
That is, by forming recess (groove or pore) at reinforcement plate, and will have flowability Bonding agent import this recess, intensity according to the rules is with reinforcement plate with by described piezoelectric The substrate of making engages. In addition, by by described bonding agent, to being bonded on the reinforcement plate The substrate of being made by piezoelectric grinds, and can form thus by having higher depth of parallelism peace The substrate that the piezoelectric of face degree is made. Also have since can be easily by organic solvent etc., With the bond layer dissolving, so even after the substrate of being made by piezoelectric is processed, will strengthen When plate is peeled away from the substrate of being made by piezoelectric, by with the dissolving of lytic agent layer, still can The substrate that is formed by piezoelectric not being applied in the situation of physical force, reinforcement plate is peeled off. Thus, can effectively prevent the feelings that the resonance characteristics of the substrate made by piezoelectric changes Condition. Thus, can be in the situation that the resonance characteristics that does not make the substrate that is formed by piezoelectric changes, The substrate that formation is made by the piezoelectric with the higher depth of parallelism and flatness.
In addition, in described the 1st~the 3rd embodiment, as the manufacture method of piezoelectric element, right The example of the manufacture method of vibrating member is illustrated, and still, the invention is not restricted to this situation, The present invention also can be widely applicable for other the manufacture method of piezoelectric element such as wave filter.
Also have, in the 3rd embodiment, such as Figure 16~shown in Figure 21, shown at disc-shape Mounting table 100 on, the leachy a plurality of reinforcement plates 21 of tool are set, then, by bonding agent, Crystal slab 23 is engaged on this reinforcement plate 21, but the invention is not restricted to this situation, as The conversion example of the 3rd embodiment as shown in figure 25, also can not adopt mounting table, and is equipped with tool Leachy, such as the large-scale reinforcement plate 31 that is of a size of 60mm * 60mm * 7mm, and By bonding agent, with polylith (in this conversion example, being 12) crystal slab (by the piezoelectricity material The substrate that material is made) 23 is engaged on this large-scale reinforcement plate 31. If consist of in this manner, Owing to do not adopt mounting table, can eliminate by reinforcement plate and the crystal slab (base of being made by piezoelectric Heat when plate) bonding and the distortion between reinforcement plate and mounting table that causes. Thus, also Can not produce owing to crystal slab that the distortion between reinforcement plate and the mounting table causes (by the piezoelectricity material The substrate that material is made) flatness and the depth of parallelism reduce. Consequently, can further improve water Flatness and the depth of parallelism of brilliant plate (substrate of being made by piezoelectric) 23.

Claims (17)

1. the manufacture method of a piezoelectric element, this method comprises:
On the surface of reinforcement plate, form the operation of recess;
Import the recess of described reinforcement plate by having mobile bonding agent, with described reinforcement plate and the operation that engages by the substrate that piezoelectric is made.
2. manufacture method according to claim 1, it is characterized in that, described reinforcement plate and the operation that engaged by the substrate that piezoelectric is made are comprised: under described reinforcement plate and the baseplate-laminating of making by piezoelectric and state that it is exerted pressure, import from described recess and to have mobile bonding agent, thus with described reinforcement plate and the operation that engages by the substrate that piezoelectric is made.
3. manufacture method according to claim 1 and 2 is characterized in that, the recess of described reinforcement plate forms according to the mode of the end of the bonding part between the substrate that extends to described reinforcement plate at least and made by piezoelectric.
4. manufacture method according to claim 1, it is characterized in that, before the substrate of making by piezoelectric and operation that reinforcement plate engages, comprise also that respectively the composition surface of the substrate of making to the composition surface of described reinforcement plate with by piezoelectric carries out the operation of mirror finish.
5. manufacture method according to claim 1 is characterized in that, described reinforcement plate contains the material of thermal coefficient of expansion near the thermal coefficient of expansion of the substrate of being made by piezoelectric.
6. manufacture method according to claim 1 is characterized in that, after the substrate that will be made by piezoelectric and reinforcement plate engage, also comprises thickness of slab according to the rules, the operation that the surface of the substrate made by piezoelectric is ground; And
After this, by with the dissolving of described bonding agent, the operation that will peel away from reinforcement plate by the substrate that piezoelectric is made.
7. the manufacture method of a piezoelectric element, this method comprises following operation:
On the surface of reinforcement plate, form the operation of recess;
At the baseplate-laminating that will make by piezoelectric under the lip-deep state of described reinforcement plate, the sidepiece of the binding face of the substrate of making from reinforcement plate with by piezoelectric, import thermosetting the 1st bonding agent, and import from the recess of described reinforcement plate by having the 2nd mobile bonding agent, described reinforcement plate and the operation that engages by the substrate that piezoelectric is made;
Under the state that reinforcement plate and the substrate made by piezoelectric are engaged, size according to the rules will be cut off by the substrate that piezoelectric is made, and forms the operation of patch of piezoelectric material thus;
By having mobile the 2nd bonding agent dissolving, will partly not peel off by the reinforcement plate that the 1st bonding agent is engaged on the patch of piezoelectric material, only will be engaged in the operation that the reinforcement plate on the patch of piezoelectric material is partly peeled off by the 2nd bonding agent.
8. manufacture method according to claim 1 is characterized in that, the lip-deep recess that is formed on described reinforcement plate comprises the pore on the composition surface at least that is formed in the reinforcement plate.
9. manufacture method according to claim 8 is characterized in that, the reinforcement plate with pore comprises the reinforcement plate of being made by porous ceramic.
10. manufacture method according to claim 9 is characterized in that, the reinforcement plate that is formed by porous ceramic comprises that by from porous matter ferrite, a kind of material selecting in porous matter aluminium oxide and the porous matter carbon forms.
11. manufacture method according to claim 10 is characterized in that, forms the ferritic operation of described porous matter and also comprises:
The ferrite formed body is carried out the operation of sintering;
After to described ferrite formed body sintering, it is carried out accurately machined operation.
12., it is characterized in that the ferritic stomatal frequency of described porous matter is at 4000/mm according to claim 10 or 11 described manufacture methods 2More than, 10000/mm 2In the following scope.
13. manufacture method according to claim 10 is characterized in that, the average pore size of the ferritic pore of described porous matter is less than 5 μ m.
14. the manufacture method of a piezoelectric element, this method comprises following operation:
Form and in composition surface, have the operation of the reinforcement plate of pore at least;
Bonding agent is imported the operation in the pore of described reinforcement plate;
The operation of the substrate that will make by piezoelectric and the surface adhesion of described reinforcement plate;
The operation that the substrate that is formed by piezoelectric that is adhered on the reinforcement plate is ground.
15. manufacture method according to claim 14 is characterized in that, the operation that imports bonding agent comprises: in the pore of bonding agent being delivered to reinforcement plate and after on the surface of reinforcement plate, and the operation of the bonding agent of part beyond the pore in the removal reinforcement plate.
16. manufacture method according to claim 8 is characterized in that, the reinforcement plate with pore has the size that a plurality of substrates of being made by piezoelectric can be set thereon.
17. manufacture method according to claim 1 is characterized in that, the described substrate of being made by piezoelectric comprises crystal, and lanthanum is sowed Si oxide (La 2Ga 5Si 5O 14) in any.
CN01120620A 2000-07-17 2001-07-17 Method for mfg. piezoelectric element Pending CN1334608A (en)

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JP153562/2001 2001-05-23
JP2001153562A JP2002190629A (en) 2000-07-17 2001-05-23 Method for manufacturing piezoelectric element

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CN105229924A (en) * 2013-05-21 2016-01-06 日本碍子株式会社 The manufacture method of piezoelectric device, piezoelectric device and piezoelectricity self-supporting substrate
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JP6097896B1 (en) * 2015-09-15 2017-03-15 日本碍子株式会社 Method for estimating thickness tendency of composite substrate and piezoelectric substrate
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CN102582142B (en) * 2010-12-22 2015-11-25 日本碍子株式会社 The manufacture method of composite base plate and composite base plate
CN105229924A (en) * 2013-05-21 2016-01-06 日本碍子株式会社 The manufacture method of piezoelectric device, piezoelectric device and piezoelectricity self-supporting substrate
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CN108352442B (en) * 2015-09-15 2021-07-20 日本碍子株式会社 Composite substrate and method for estimating thickness trend of piezoelectric substrate

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