TW517452B - Method for manufacturing piezoelectric element - Google Patents

Method for manufacturing piezoelectric element Download PDF

Info

Publication number
TW517452B
TW517452B TW90114937A TW90114937A TW517452B TW 517452 B TW517452 B TW 517452B TW 90114937 A TW90114937 A TW 90114937A TW 90114937 A TW90114937 A TW 90114937A TW 517452 B TW517452 B TW 517452B
Authority
TW
Taiwan
Prior art keywords
reinforcing plate
plate
aforementioned
adhesive
substrate
Prior art date
Application number
TW90114937A
Other languages
Chinese (zh)
Inventor
Atsuyuki Sugizono
Shinji Murakami
Original Assignee
Sumitomo Spec Metals
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Spec Metals filed Critical Sumitomo Spec Metals
Application granted granted Critical
Publication of TW517452B publication Critical patent/TW517452B/en

Links

Landscapes

  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Ceramic Products (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

The present invention provides a method for manufacturing a piezoelectric element in which a substrate of piezoelectric material having high planarity and parallelism can be formed without having any adverse effect on the resonance characteristics thereof. The method for manufacturing a piezoelectric element comprises: a step for making trenches on the surface of a reinforcing plate, and a step for bonding the reinforcing plate to a substrate formed of piezoelectric material by introducing an adhesive having fluidity into the trenches of the reinforcing plate. Thus, the reinforcing plate can be bonded to the substrate formed by the piezoelectric material with predetermined strength. Also, by polishing the substrate formed by the piezoelectric material and which is bonded to said reinforcing plate, a substrate of piezoelectric material having high planarity and parallelism can be formed. Furthermore, since the adhesive layer can be dissolved simply by organic solvent, etc., the reinforcing plate can be peeled off in the state without applying any physical strength on the substrate formed of the piezoelectric material. Therefore, the resonance characteristics of the substrate formed of the piezoelectric material can be effectively kept.

Description

517452 、發明說明(1) [發明之背景] (發明之領域) 本發明係有關壓電元杜+剩、止I、+ t , 电70件之製造方法,特別係有關壓電元 件構成之基板貼上增強板之狀態下,針對壓電材料所構成 之基板施以加工之壓電元件之製造方法。 [背景技術之說明] 近ΐ县P現著電子機器之資訊量之增加及高速化,對電 子機器振I頻率和時鐘脈衝頻率的高頻化之需求也增加 了。因2,例如,壓電材料所構成之壓電元件之一例一晶 體振盪器,也被要求具備100MHz以上的基本波諧振頻率。 而厚度滑動式晶體振盪器係由其厚度決定諧振頻率。因_ 此,f要晶體板具備100MHzu上之基本波諧振頻率,就必 須將晶體板減薄至20 // m以下。此時卻會發生晶體板太薄 易於破損的問題。 以往,為防止上述之問題而採取的方法是,在晶體板上 用黏合劑貼上增強板之狀態下,將晶體板加工減薄到既定 的厚度。更詳細地說,首先,在增強板之黏合表面塗上黏 合劑後’再將晶體板和增強板予以黏合。而且,在黏上增 強板予以加強之狀態下’將晶體板加工減薄到既定的厚 度。 然而,上述傳統方法,由於增強板上黏合表面所塗佈的_ 黏合劑,通常其流動性不佳,有不容易均勻散佈於增強板 的黏合面上的問題。因此,很難在增強板和晶體板之黏合 面形成均勻的黏合劑層。但若晶體板和增強板的黏合面的517452, Description of the invention (1) [Background of the invention] (Field of the invention) The present invention relates to a method for manufacturing piezoelectric elements such as ++, +, t, and 70 electrical components, and particularly relates to a substrate composed of piezoelectric elements. A manufacturing method of a piezoelectric element in which a substrate made of a piezoelectric material is processed in a state in which a reinforcing plate is attached. [Explanation of the background technology] Kinki Prefecture P has seen an increase in the amount of information of electronic devices and the increase in speed, and there has been an increase in the demand for high frequency of electronic device vibration frequency and clock pulse frequency. Because of this, for example, a crystal oscillator, which is an example of a piezoelectric element made of a piezoelectric material, is also required to have a fundamental wave resonance frequency of 100 MHz or more. The thickness sliding crystal oscillator determines its resonance frequency by its thickness. Therefore, if the crystal plate has the fundamental wave resonance frequency at 100MHzu, the crystal plate must be thinned to less than 20 // m. However, the crystal plate is too thin and easily broken. Conventionally, in order to prevent the above-mentioned problems, a method for reducing the thickness of a crystal plate to a predetermined thickness in a state in which a reinforcing plate is attached with an adhesive on the crystal plate has been adopted. In more detail, first, an adhesive is applied to the bonding surface of the reinforcing plate, and then the crystal plate and the reinforcing plate are bonded. In addition, the crystal plate is thinned to a predetermined thickness in a state where the reinforcing plate is bonded and reinforced. However, in the above conventional method, due to the adhesive applied on the bonding surface of the reinforcing plate, the fluidity is generally not good, and there is a problem that it is not easy to uniformly spread on the bonding surface of the reinforcing plate. Therefore, it is difficult to form a uniform adhesive layer on the bonding surface of the reinforcing plate and the crystal plate. But if the bonding surface of the crystal plate and the reinforcing plate

C:\2D-CODE\90-09\90114937.ptd 第5頁 517452 五、發明說明(2) f ΰ劑層形成得不均勻,則當其在增強板和晶體板黏合狀 L下’針對晶體板表面進行加工研磨到既定之厚度時,晶 體板的平面度及平行度均有品質低落之慮。 因此’上述傳統方法,無法形成具高度平面度和平行度 的晶體板。 於是’以往有人在曰本專利特開平8-4647 5號公報上提 案一種j作為增強板的矽晶板表面,不使用黏合劑而用分 子間力里使晶體板作物理性接合後,再將晶體板研磨到丄5 左右的技術。在該項被建議的技術中’由於不使用黏 J被w為可避免因黏合劑層之不均勻而引起的晶體板 平面f和平行度之品質低落的問題。 $ t p# 接B ,故於完成加工後從矽晶板剝離晶體 使晶體板受到物理性的應力。因此,有可能使 力量,由於其接人;化的問題…’若使用分子間 發生無法形成^声i無法達到所需之耐研磨程度,就會 [發明之揭示] X平仃度和平面度的晶體板的問題。 本發明之目的之— 法,其係不使壓電材料^提供一種壓電元件之製造方 生變化,而可形成且“成之基板(晶體板)之諧振特性發 成之基板者。 〃有高度平行度及平面度之壓電材料構 法 本發明之另一目的 ,其係於增強板與 ’在於提供一種壓電元件之製造方 壓電材料所構成之基板之間,可簡單C: \ 2D-CODE \ 90-09 \ 90114937.ptd Page 5 517452 V. Description of the invention (2) f The tincture layer is not uniformly formed. When it is under the adhesion L of the reinforcing plate and the crystal plate, the crystal is targeted at the crystal. When the surface of the plate is processed and ground to a predetermined thickness, the flatness and parallelism of the crystal plate may be degraded. Therefore, the above-mentioned conventional method cannot form a crystal plate having a high degree of flatness and parallelism. Therefore, in the past, some people proposed in Japanese Patent Laid-Open No. 8-4647 No. 5 a silicon crystal plate surface as a reinforcing plate. The crystal plate crops were rationally bonded by intermolecular force without using an adhesive, and then the crystals were bonded. Plate grinding technology to around 丄 5. In this proposed technique, 'the absence of sticking J is used to avoid the problems of low quality of the plane f and parallelism of the crystal plate caused by the unevenness of the adhesive layer. $ t p # is connected to B, so after the processing is completed, the crystal is peeled from the silicon crystal plate to subject the crystal plate to physical stress. Therefore, it is possible to make force due to its accessibility; the problem ... If the use of intermolecular molecules fails to form ^ sound i can not achieve the required degree of resistance to grinding, [invention of disclosure] X flatness and flatness Problem with the crystal plate. The object of the present invention is a method that can form a substrate that does not change the manufacturing method of a piezoelectric element, and can produce a substrate that has a resonance characteristic of a completed substrate (crystal plate). Construction method of piezoelectric material with high parallelism and flatness Another object of the present invention is between a reinforcing plate and a substrate formed by a piezoelectric material which is a manufacturing method for providing a piezoelectric element.

517452 、發明說明 立 地形成均勻之黏合劑層者。 2月之又一目的,在於提供一種壓電元件之 並益二,於增強板與屢電材料所構成之基板之間7實 基板相接合者。 j使柘強板與屋電材料所構成之 包:ΐ::範圍第1項中之壓電元件之製造方法,其中, 有板之表面形成凹部,並於該增強板 含有:ίΐ基;而且’本發明中所稱凹部,係指 ,同時將具有流動性之黏合劑導这入二增強板形成凹部 板與塵電材料所構成之基板以既定:強;相=可使增強 之基板。再者,黏合劑層可之塵電材料所構成 ,故於完成加工後從壓電材料 】::寺:"予以溶解 時,藉黏合劑之溶解,不必2 t j基板剝離增強板之 物理性力量即可剥離增強板。::材=成之基板承受 成基板之諧振特性發生變化。 可避免使塵電材料構 申請專利範圍第2項中之壓電 專利範圍第1項中將增 j衣&方法,其申請 接合之步驟,包括將辦強板板材料所構成之基板加以 黏合加麼之狀態下==電材料所構成之基板加以 動性之黏合劑,在增強板之 第7頁 C:\2D-CODE\90-09\90114937.ptd 五、發明說明(4) 接合面與壓雷 下,使具流動性〇 ^ ^之基板之接合面互相接觸之狀態 板與壓電材料 二占δ f浸透到接合面中。由此可於增強 合劑層。 斤構成之基板之間’簡單形成厚度均勾之黏 申请專利範圍第3 一 請專利範圍第丨項或2、墊電凡件之製造方法,於其申 係至少延伸至增強^構中,其增強板凹部之形成, 成,至少延伸至增強板與壓電材=其增強板凹部之形 態下’仍可從增強板與壓電材::::成之基板黏合之狀 之端部之凹部’簡單導入黏合劑。、之基板之接合部分 申叫專利範圍第4項中之壓雷 請專利範圍第1項之結構中:造方法,、於其申 與增強板接合之步驟之前 i电料所構成之基板 對增強板之接合面與壓電材;;::=驟,胃步驟係針 鏡面加工者。如此,藉由針二=妾T,,加以 所構成基板之接合面,力口以:;=之;合面與壓電材料 材料所構成基板之接合面d:可使增強板與壓電 心點合劑增加浸透性,可於拎% ΪΙΓ才料所構成基板之接合面簡單形成均句之黏“ '。2者’右將屋電材料所構成之基板兩 /亚將增強板之接合面予以鏡面加工,可使用光學平面法 (optlcal flat,利用光之干涉條紋之方 所構成之基板與增強板之接合表面出現之干517452, Description of the invention Those who form a uniform adhesive layer on the ground. Another purpose of February is to provide a combination of piezoelectric elements, which are bonded to a solid substrate between a reinforcing plate and a substrate made of a repeatable material. j The method of manufacturing a piezoelectric element made of a sturdy board and a house electric material: ΐ :: The piezoelectric element manufacturing method of item 1 in which a recess is formed on the surface of the board, and the reinforcing board contains: a base; 'The recessed part referred to in the present invention refers to a substrate composed of a recessed plate and a dust-electric material, which is guided by a flowable adhesive into the two reinforcing plates at the same time. The predetermined: strong; phase = substrate that can be reinforced. In addition, the adhesive layer can be composed of a dusty electrical material, so it can be removed from the piezoelectric material after the processing is completed. The strength can peel the reinforcing plate. :: Material = Into the substrate. The resonance characteristics of the substrate change. It can avoid making the dust-electricity material structure in the second patent application scope of the piezoelectric patent scope, the first method will increase the j clothing & method, the application of the bonding step, including the substrate made of strong board materials In the state of adding == the substrate made of electrical material is a dynamic adhesive, on page 7 of the reinforcing plate C: \ 2D-CODE \ 90-09 \ 90114937.ptd 5. Description of the invention (4) Joint surface Under pressure and lightning, the state plate and the piezoelectric material that make the joint surface of the substrate with fluidity ^^ contact each other δ f penetrate into the joint surface. This can be used to strengthen the mixture layer. Between the substrates constituted by the kilograms, the thickness of the adhesive layer is simply formed. The scope of the patent application is No. 3-the scope of the patent application, or 2. The manufacturing method of the pad is extended to at least the reinforced structure. The formation of the concave portion of the reinforcing plate is at least extended to the form of the concave portion of the reinforcing plate and the piezoelectric material = the concave portion of the reinforcing plate and the piezoelectric material can still be removed from the reinforcing plate and the piezoelectric material ::: 'Simple import adhesive. The bonding part of the substrate is called the lightning protection in the scope of the patent scope No. 4 in the structure of the scope of the patent scope: the manufacturing method, the substrate pair formed by the electric material before the application of the step of joining with the reinforcing plate The joint surface of the plate and the piezoelectric material; :: = step, the stomach step is a needle mirror surface processor. In this way, by using pin 2 = 妾 T, the joint surface of the substrate is added, and the force mouth is:; = of; the joint surface and the junction surface of the substrate composed of the piezoelectric material d: the reinforcing plate and the piezoelectric core can be made The spotting agent can increase the permeability, and it can be used to easily form a uniform bond on the joint surface of the substrate made of 拎% ΪΙΓ. The two of the right will strengthen the joint surface of the substrate made of the house electrical material and / or the reinforced plate. For mirror processing, the optical plane method (optlcal flat) can be used.

IH C:\2D-CODE\90-09\90114937.ptd $ 8頁 517452 五 發明說明(5) = !電材料所構成基板之平面度。即可根據 了、。°果間早地调郎壓電材料所構成基板黏合時的平面度 請:=5項中之壓電元件之製造方法,於其申 兮私把圍第項之結構中,其增強板係包括其他材料, ::Ϊ 脹:、數係近似壓電材料所構成基板之熱膨脹 似壓電材料所構成基板之熱膨脹係數之材料,合;; 免在增強板與壓電材料所構= 所變板與壓電材料 私王夂艰而招致平面度品質之低落。 :=利範圍第6項中之壓電元件之製造方法 之項:結構中,在使壓電材料所構成之基: 辦強;fe之桩二& ί驟之後,更包括一種步驟,該步驟係使 二板之接合面與壓電材料所構成基板之接合面,研磨成 椹:ίIfΐ:並於其後藉黏合劑之溶解而將壓電材料所 土板伙增強板剝離者。申請專利範圍第6項中,如 不施加物理性應力予麼電材料所構成之基板, Ϊ5=解二可將壓電材料所構成之基板從增強板剝 =其結果,纟不影響壓電材料所構成之基板之諧振特性 Ϊ ΐ:,即可將壓電材料所構成之基板從增強板剝離。 ^申言月專利範圍第7項中之壓電元件之製造方法 , ,包括I列步驟’即:①於增強板上形成凹部之步驟;②將 整電材料所構成之基板貼上增強板表面之狀態了,由增強 C:\2D-CODE\90-09\90114937.ptd 517452 五、發明說明(6) - 板與壓電材料所構成基板之接合面之側端導入熱固性之第 1種黏合劑,同時從增強板之凹部導入具有流動性之第2 霉占合劑’藉以使增強板與壓電材料所構成基板接合之步 ^ ;③在增強板與壓電材料所構成基板接合之狀態下 ϋ材料所構成之基板切割成既定之大小,藉以形成壓雷 葬之步驟④將具有流動性之第2種黏合劑予以溶解, 乂 ^ =使經由第2種黏合劑接合於壓電材料片之IH C: \ 2D-CODE \ 90-09 \ 90114937.ptd $ 8 pages 517452 5 Description of the invention (5) =! The flatness of the substrate made of electrical materials. Can be based on ,. ° The flatness of the substrates composed of the piezoelectric materials made by Guomao early when bonding: Please refer to the manufacturing method of the piezoelectric element in item 5; in the structure of the second item, the reinforcement plate includes Other materials, :: Ϊ Expansion: The material is similar to the thermal expansion of a substrate made of piezoelectric material, similar to the coefficient of thermal expansion of a substrate made of piezoelectric material; Difficulties with the prince of piezoelectric materials led to a low quality of flatness. : = The item of manufacturing method of the piezoelectric element in Item 6 of the profit range: In the structure, after the base made of the piezoelectric material is: to do strong; after the second step of fe & The steps are to grind the joint surface of the two plates and the joint surface of the substrate made of piezoelectric material into 椹: ΐ If: and then dissolve the reinforcing plate of the piezoelectric material and the reinforcing plate by dissolving the adhesive. In item 6 of the scope of the patent application, if no physical stress is applied to the substrate made of the electromechanical material, 解 5 = Solution 2: The substrate made of piezoelectric material can be peeled from the reinforcing plate = the result, 纟 does not affect the piezoelectric material The resonance characteristics of the formed substrate Ϊ ΐ: The substrate made of piezoelectric material can be peeled from the reinforcing plate. ^ The method for manufacturing a piezoelectric element in item 7 of the scope of the claim, including the first row of steps, that is: ① the step of forming a recess on the reinforcing plate; ② the substrate composed of the entire electrical material is attached to the surface of the reinforcing plate C: \ 2D-CODE \ 90-09 \ 90114937.ptd 517452 V. Description of the invention (6)-The first type of bonding of the thermosetting property is introduced at the side end of the joint surface of the board and the piezoelectric material Step of introducing the second moldable compound with fluidity from the concave portion of the reinforcing plate at the same time so as to join the reinforcing plate with the substrate made of piezoelectric material ^; ③ in a state where the reinforcing plate and the substrate made of piezoelectric material are joined基板 The substrate made of the material is cut into a predetermined size to form a lightning funeral step. ④The second adhesive with fluidity is dissolved. 乂 ^ = The second adhesive is bonded to the piezoelectric material sheet.

Si:之Π:::由第1種黏合劑接姆電材A 強二面項V藉由此種結構’可簡單形成增 電材料片日寺,可保:::::”電材料片。由此,搬運麼 果,即使壓電材粗y /、θ強板部分而予以簡單移動。苴結 中請專利範圍m型化、,仍一可簡單搬運。 請專利範圍第1項之纟士、 ^壓電几件之製造方法,於其申 ,係至少包括形成於I 形成於增強板表面之凹部 申請專利範圍苐8項曰板接a表面之氣孔者。 表面形成作為凹部士、上述,在增強板之至少接合 ?增強板* Φ之氣孔乳則經2具有%動性之黏合劑導人 單地使增強板與愿料6 入该氣孔之黏合劑,可簡 合劑係位於增強之基板接合。此時,因i :層存在於增強板與屢電::::可在實質上並無黏合 ’當針對接合於増強基板予以接合。由此 ___ 電材科所構成之基板加以研 C:\2D-GQDE\90-09\90114937.ptd 第10頁 )上7452 五、發明說明(7) f 1,不會發生起因於黏合劑声之,声僬、/ 所構成之基板之平行声 d θ之尽度偏差而使壓電材料 ,可形成具有高度平;;質低落之問題。其結果 板。又因為则係可= 材料所構成之基 材料所構成之基板之加、,合^寻間早地溶解,於壓電 之基板剝離時,也可葬对ί,將增強板從麼電材料所構成 需要加物理性之力量;;::::溶解而使增強板剝離,不 有效避免壓電材料所構::戶:構成之基板。由此’可 tf ^ ,-i IS 8 ^ ^ ^ ^ ^ 料所構成之美柘#垢# 己載之發明,可在不使壓電材 申請專利範圍第9項7之上所構成之基板。 請專利範圍第8項之社構中堅"凡件之製造方法,於其申 括多孔質陶莞增強板° ’真、具有氣孔之增強板,係包 孔質陶究之增強板,藉專::f;弟9項中,係使用多 ,只要將黏合劑導入言;夕吏?強板表面有許多氣孔。如此 料所構成之基板間之接二固軋^ L即可在增強板與壓電材 下,簡單地將增強板盘=’實質上並無黏合劑層之狀態 申請專利範圍第10項;”構成之基板接合起來。 請專利範圍第9項之結構中中之塵 括從多孔質肥粒鐵、多孔所,、夕孔貝陶瓷增強板,係包 其一之增強板。申請專利^鋁,多孔質碳等材料群中任選 】耗圍第1 0項中,可上;十、夕丨所 陶瓷增強板之類的傳統材 1。。认收士社 述夕孔貝 增強板。 4,間早地將市售之材料挪用為Si: of Π ::: The first type of adhesive is used to form a strong dihedral item V of electric material A. With this structure, a power-increasing material sheet can be easily formed, such as: Nitsa :::: "electric material sheet. Therefore, even if the piezoelectric material has a thick y /, θ strong plate, it can be easily moved. If the patented scope is m-shaped, it can still be easily transported. The method of manufacturing piezoelectric pieces includes, in its application, at least the pores formed on the surface of the reinforcing plate formed on the surface of the reinforced plate and the scope of the patent application is 8 items. The surface is formed as a recessed hole. At least join the reinforcing plate? The reinforcing plate * Φ of the pore milk is guided through the 2% adhesive to make the reinforcing plate and the adhesive 6 into the pores. The simple agent is located on the reinforced substrate. At this time, because the i: layer is present on the reinforcing plate and repeated electricity :::: can be substantially bonded. When the substrate is bonded to the stubborn substrate, the substrate composed of the Department of Electrical Materials will be researched. : \ 2D-GQDE \ 90-09 \ 90114937.ptd page 10) on 7452 V. Description of invention (7) f 1, no Due to the extreme deviation of the parallel sound d θ caused by the sound of the adhesive and the sound of the substrate, the piezoelectric material can be formed to have a high level; the problem of low quality. The result is the plate. And because It can be equal to the addition of the substrate made of the base material of the material. It can be dissolved early in the process. When the piezoelectric substrate is peeled off, it can also be buried. The reinforcement plate must be added from the electrical material. Physical strength ;; :::: dissolves and peels the reinforcing plate, which does not effectively prevent the piezoelectric material from forming :: :: the substrate made of it. From this' 可 tf ^, -i IS 8 ^ ^ ^ ^ ^ The composition of the beautiful 柘 ### The self-contained invention can be made on a substrate that does not make the piezoelectric material apply for the scope of patent No. 9 to No. 7. Please refer to the backbone of the social structure of the No. 8 patent. In its application, porous ceramic reinforced board ° 'reinforced board with porosity, is a reinforced board with porous porosity, by the special :: f; brother 9 items, the system is used more, as long as the adhesive Introduction; Xi Li? There are many air holes on the surface of the strong plate. The two solid rolling between the substrates made of this material ^ L In the reinforcing plate may be the piezoelectric material, the reinforcing plate disk simply = 'state substantially no adhesive layers range patent item 10; "constituting the bonded substrate. The dust in the structure of item 9 of the patent range includes porous ferrous iron, porous materials, and Sicombe ceramic reinforced boards, including one of the reinforced boards. Apply for patent ^ Aluminum, porous carbon and other materials are optional.] Consumption in the 10th item, available; 10, the traditional materials such as ceramic reinforced board 1. . Recruitment agency Shu Xi Kongbei reinforced board. 4. Earlier misappropriation of commercially available materials as

C:\2D-CODE\90-09\90ll4937.ptd ill 1麗_| 第11頁 517452C: \ 2D-CODE \ 90-09 \ 90ll4937.ptd ill 1Li_ | Page 11 517452

517452517452

不良影響。也即,若多孔質肥粒鐵之氣孔之平均孔徑大於 5 # m,則於研磨壓電材料所構成之基板時,由於磨:之押 壓力,有可能使位於增強板氣孔上之壓電材料所構成之基 板邛刀發生^:形之問題。此時會發生壓電材料所構成之美 板平行度品質低落之問題。申請專利範圍第丨3項中,為^ 止此類問題,將多孔質肥粒鐵之氣孔平均孔徑形成在5 以内。 μ 申請專利範圍第1 4項中之壓電元件之製造方法, =列步驟:步驟①其係形成至少在接合表面具有氣孔之^辦 ί 將黏合劑導入該增強板之氣孔;步驟③將壓曰電 "、斤構成之基板接合於增強板表面上;步驟④人 於增強板上之壓電材料所構成之基板加以研磨。 口 改4申Μ ί利範圍第1 4項巾,如上述,係將黏合劑導入該辦 位於==基板予以接合。此時,因黏合劑係 认曰強板表面之軋孔内,故可在實質上並無黏合 =於增強板與壓電材料所構成之基板之接合面之狀能;^ 板與厂堅電材料所構成之基板予以接合。二:針 不ί:ϊ 1曾強板上之壓電材料所構成之基板加以研磨i, 成之基板之平行产及i^ 偏差而使壓電材料所構 _ ^ 十仃度及干面度品質低落之問題。其鈇果,可 7又ί ί “度平行度和平面度的壓電材料所構成之美板 土板之加工後,將增強板從壓電材料所構成之Adverse effects. That is, if the average pore diameter of the pores of the porous ferrous iron is greater than 5 # m, when grinding the substrate made of piezoelectric material, the piezoelectric material located on the pores of the reinforcing plate may be caused by the grinding pressure. The formed substrate trowel has a ^: shape problem. At this time, the problem of low parallelism quality of the US plate composed of piezoelectric materials occurs. In item 3 of the scope of the patent application, in order to prevent such problems, the average pore diameter of the pores of the porous ferrous iron is formed within 5. μ The method for manufacturing a piezoelectric element in item 14 of the scope of the patent application, is as follows: Step ① It is to form a pore with at least the pores on the joining surface. 将 The adhesive is introduced into the pores of the reinforcing plate; step ③ The substrate composed of electric power and bonding is bonded to the surface of the reinforcing plate; in step ④, the substrate made of piezoelectric material on the reinforcing plate is polished. As mentioned above, the adhesive is introduced into the office, which is located on the substrate. At this time, because the adhesive is recognized as a rolled hole on the surface of the strong plate, there can be virtually no adhesion = the shape energy of the joint surface of the substrate composed of the reinforcing plate and the piezoelectric material; The substrates made of materials are bonded. 2: Needle not: ϊ 1The substrate made of piezoelectric material on Zeng Qiang plate is polished i, the parallel production of the substrate and the deviation of i ^ make the structure of piezoelectric material _ ^ ten degrees and dry surface The problem of low quality. The result is a beautiful plate made of piezoelectric material with parallelism and flatness. After the soil plate is processed, the reinforcing plate is made of piezoelectric material.

JW452 五、發明說明(10) 基板剝離時,也可對人 要加物理性之力量;;:1料=使增強板剥離,不需 效避免壓電材料所構成之芙板%冓成之基板。由此,可有 申請專利範圍第15項中:壓;振:性:生變化。 請專利範圍第14項之結構中,::^造方* ’於其申 括:將黏合劑導入該辩# & > 钻s劑之步驟,尚包 後,再將辦強乳孔内及增強板表面上之 说丹财增強板之氣孔以外部分夕私入今丨丄八 請專利範圍第15項+,藉上 ΐ:之步驟。申 針對增強板之氣孔填…;:早地將黏合劑只 可在增強板與壓電材料所構成心=點合劑, 並無黏合劑層存在 斤基板間之接合面,實質上 所構成之基板接合起來:’間早地將增強板與壓電材料 利範圍第16項中之壓電元件之製造方&,於 ::::圍第8項之結構中’具有氣孔之增強 、大小 ίΐ!置複數之^述塵電材料所構成之基板者。中請專利 :弟1 6項中’藉由此種構成,可佈置複數之上述壓電材 2所構成之基板於具有氣孔之增強板上,故不必使用載料 1 t此,可解消起因於增強板與壓電材料所構成之基板 黏合k之熱效應而在增強板與載料台之間發生形變之門 題,故也可避免因增強板與載料台之間發生形變而使壓電 t料所構成之基板之平面度及平行度之品質低落之問題。 結果,可提升壓電材料所構成之基板之平面度及平 度。 申請專利範圍第1 7項中之壓電元件之製造方法,於其申JW452 V. Description of the invention (10) When the substrate is peeled off, you can also add physical strength to the person;: 1 material = peeling the reinforcing plate without the need to avoid the substrate formed by the piezoelectric material. . As a result, there may be patent application scope No. 15: pressure; vibration: nature: change. In the structure of item 14 of the patent, please refer to: ^ 造 方 * 'in its claim: the step of introducing the adhesive into the debate # & > Drilling agent, after packaging, will be in the strong pores And on the surface of the reinforced board, the part outside the pores of the Dancai reinforced board is privately entered today. I would like to request the 15th + of the patent scope, and borrow the following steps: Application for air hole filling of reinforced board ... :: The adhesive can only be formed on the reinforced board and the piezoelectric material at the core = point agent, and there is no adhesive layer on the joint surface between the substrates, which is essentially a substrate Joined together: 'Make the reinforcing plate and the piezoelectric element in the scope of the piezoelectric material in the 16th item & early in the structure of the :::: surrounding item 8' with the enhancement and size of air holes ! Set a plurality of substrates made of dust and electricity materials. Patent claimed: In this 16th item, 'With this structure, a plurality of substrates composed of the above-mentioned piezoelectric material 2 can be arranged on a reinforcing plate with air holes, so it is not necessary to use a carrier material 1 t. This can be eliminated due to The thermal effect of the bonding of the substrate composed of the reinforcing plate and the piezoelectric material causes the deformation between the reinforcing plate and the carrier, so it can also avoid the piezoelectric t due to the deformation between the reinforcing plate and the carrier. The quality of the flatness and parallelism of the substrate formed by the material is low. As a result, the flatness and flatness of the substrate made of the piezoelectric material can be improved. The manufacturing method of the piezoelectric element in the 17th scope of the patent application is

C:\2D-CODE\90-09\90114937.t 517452C: \ 2D-CODE \ 90-09 \ 90114937.t 517452

、發明說明(π) 请專利範圍第1項之結構中,其壓電材料所 係含有晶體或I闌鎵石夕化物(LasGas S i Ou )中之任_ 土板 二專利範圍第1 7項中,藉由使用此種壓電材 1者申 板,可簡單地形成具優良平面度及平行度==之基 [本發明之最佳實施例] 以下根據圖示說明本發明之實施例。 (弟1貫施例) 參照圖卜9,以下說明第1實施例中晶體振盪器之步驟。 再者,晶體振盪器係本發明「壓電元件」之一例。 首先,如圖1所示,準備一塊15n]inx 15mmx lmm之增強板 (1) 。該增強板(1)之熱膨脹係數,宜以與後述之晶體板 (2) 之熱膨脹係數近似之材料形成。例如,本實施例中, 係使用Al2〇3-TiC所製成之增強板(丨)。 、其次,如圖2所示,在增強板(1)之接合表面形成複數之 溝(la)。該溝(la)係由寬〇· lmm左右,深〇· 2_左右之矩形 形狀所形成。該溝(la)係延伸形成於增強板(1 )之兩邊端 部。再者,該溝(1 a)係本發明之「凹部」之一例。 其次,如圖3所示,準備一塊i2mmx I2mmx 0.2mm大小之 晶體板(2)。再者,晶體板(2)係本發明之「壓電材料所構 成之基板」之一例。 由此狀態,如圖3所示,在晶體板(2)之兩面施以鏡面加 工’使晶體板(2)之厚度成為〇· 〇7min,同時將晶體板(2)之 表面及背面加工成鏡面。該鏡面加工,將晶體板(2 )之兩 表面之表面粗糙度加工至R a值(中心線平均粗縫度)〇 . 〇 〇 32. Description of the invention (π) In the structure of item 1 of the patent scope, any of the piezoelectric materials containing crystals or LasGas S i Ou is included in the structure of the patent. In this case, by using such a piezoelectric material, a substrate can be simply formed with a base having excellent flatness and parallelism == [the preferred embodiment of the present invention] The embodiment of the present invention will be described below with reference to the drawings. (First Embodiment) Referring to FIG. 9, the steps of the crystal oscillator in the first embodiment will be described below. The crystal oscillator is an example of the "piezoelectric element" of the present invention. First, as shown in Figure 1, prepare a 15n] inx 15mmx lmm reinforcement board (1). The thermal expansion coefficient of the reinforcing plate (1) is preferably formed of a material similar to the thermal expansion coefficient of the crystal plate (2) described later. For example, in this embodiment, a reinforcing plate (丨) made of Al203-TiC is used. Secondly, as shown in FIG. 2, a plurality of grooves (la) are formed on the joining surfaces of the reinforcing plate (1). The groove (la) is formed by a rectangular shape having a width of about 0.1 mm and a depth of about 0.2 mm. The groove (la) is formed at both end portions of the reinforcing plate (1). The groove (1 a) is an example of the "recessed part" of the present invention. Next, as shown in Fig. 3, prepare a crystal plate (2) with a size of i2mmx I2mmx 0.2mm. The crystal plate (2) is an example of the "substrate made of a piezoelectric material" of the present invention. In this state, as shown in FIG. 3, mirror surface processing is performed on both sides of the crystal plate (2) so that the thickness of the crystal plate (2) becomes 0.07 min. At the same time, the surface and the back surface of the crystal plate (2) are processed into Mirror. In this mirror processing, the surface roughness of both surfaces of the crystal plate (2) is processed to Ra value (average thickness of center line) 〇 〇 〇 3

C:\2D-CODE\90-09\90114937.ptd 第15頁 517452C: \ 2D-CODE \ 90-09 \ 90114937.ptd Page 15 517452

〇.〇〇…以上,則難以j 輪度達Μ 五、發明說明(12) //m以下為宜。因為,曰㈣ 以在晶體板⑺與增強板頻率,同時也難 9强板U)之間形成均勻之黏合劑層。 人,如圖5所不,在圓盤形狀之載料台 姒本實施例中為3個)之增強板⑴。在 ^ = 強板⑴之表面施以鏡面加工。該增強板⑴:、:面力::: 將增強板(Π之表面粗糙度加工至“值001 以下為宜。 因為,若增強板(1)接合面之表面粗糙度達Ra值〇· 〇1 以 上,則晶體板(2)之間形成的黏合劑層會發生表面波紋(凹 凸)將難以形成均勻之黏合劑層。相反地,若增強板(1 )之 表面粗糙度在Ra值〇· (Π 以下,則黏合劑對增強板(1)表鲁 面之浸透性會升高,因此可在晶體板(2)與之增強板(1)之 間簡單地形成均勻之黏合劑層。 如上所述,在增強板(1 )之接合表面施以鏡面加工後, 如圖6所示’將兩面施以鏡面加工之晶體板(2 )貼到增強板 (1)之接合表面上再加壓。該加壓,係藉2〇 X 1 〇4Pa-30 X 1 04Pa之加壓力押壓。在此狀態下,將臘系黏合劑以定量 分料器(di spenser)等器具注入增強板(1)之溝(la)中。再 以上述之加壓力加壓於晶體板(2 )之上部之狀態下,以約 1 0 0 °C之溫度加熱1 2個小時。 再者,臘系黏合劑,係使用黏度低而有流動性的黏合 劑。本實施例中,係使用將酞膠(曰化精工公司製)溶解於 丙酮(a c e t ο n e )之黏合劑。即,使用欧膠和丙S同以1 : 5混合 比率混合成具1 7質量%之濃度的酞膠。再者,酞膠的濃度〇.〇〇 ... above, it is difficult to achieve the degree of j round. V. Description of the invention (12) // m or less is preferred. Because, it is difficult to form a uniform adhesive layer between the frequency of the crystal plate 增强 and the enhancement plate, and it is also difficult to form a strong plate. The person, as shown in FIG. 5, has a disk-shaped loading table (3 in this embodiment), a reinforcing plate ⑴. The surface of ^ = strong plate ⑴ is mirror-finished. The reinforcing plate ⑴:,: surface force ::: It is advisable to process the surface roughness of the reinforcing plate (Π to "value 001 or less. This is because if the surface roughness of the joining surface of the reinforcing plate (1) reaches Ra value 〇 · 〇 1 or more, the surface of the adhesive layer formed between the crystal plates (2) will be corrugated (concavo-convex), and it will be difficult to form a uniform adhesive layer. On the contrary, if the surface roughness of the reinforcing plate (1) is Ra value 0 · (Π or less, the permeability of the adhesive to the surface of the reinforcing plate (1) will increase, so a uniform adhesive layer can be simply formed between the crystal plate (2) and the reinforcing plate (1). As above As described above, after the joining surface of the reinforcing plate (1) is subjected to mirror processing, as shown in FIG. 6, 'the mirror plate (2) with mirror processing on both sides is attached to the joining surface of the reinforcing plate (1) and then pressurized. The pressure is pressed by a pressure of 20 × 1 〇4Pa-30 × 1 04Pa. In this state, the wax-based adhesive is injected into the reinforcing plate (1) with a device such as a di spenser. ) In the trench (la), and then pressurized on the upper part of the crystal plate (2) with the aforementioned pressure, at a temperature of about 100 ° C. Heat for 12 hours. In addition, wax-based adhesives use low-viscosity adhesives with fluidity. In this example, phthalic rubber (made by Kasei Seiko Co., Ltd.) is used to dissolve acetone (acet ο ne). ). That is, the phthalate rubber with a concentration of 17% by mass was mixed with European rubber and acrylic S at a mixing ratio of 1: 5. Furthermore, the concentration of phthalate rubber

517452 五、發明說明(13) 以15貝里%〜20貝里%範圍内者為宜。若酞膠的濃度大於2〇 貝I °/◦,流動性就會差,因此會發生黏合劑不易均勻散佈 的問題。所以,酞膠的濃度最好是設定在15質量%以上2〇 質量%以下之範圍内。 此處,第1實施例中,由於是將晶體板(2)兩表面鏡面加 工’且在增強板(1 )之表面也施以鏡面加工,故於黏合增 強板(1)和晶體板(2)時,可用光學平面法觀察到晶體板曰 (2 )和增強板(1 )之接合界面顯示之干涉條紋。其結果,可 根據其測量結果,可簡單地調整晶體板(2)之黏合狀態以 使其具有高平面度。再者,所謂光學平面法,係指於測量 表面顯示干涉條紋,從該干涉條紋觀察平面度之方法而 4 言。 於圖6所示增強板(1 )和晶體板(2 )之黏合步驟後,如圖7 所示’在增強板(1)和晶體板(2 )黏合之狀態下,研磨晶體 板(2 )之表面,將晶體板(2 )之厚度加工到2 〇 # m以下之厚 度。此研磨過程中,先以F0#30 0 0磨石粒(粒徑3〜6 #m)作 粗研磨。然後,以氧化鈽磨石粒(平均粒徑〇 · 5 # m )作最後 加工研磨。在此研磨過程中,使用電氣測微計(e丨ec t r i c micro-meter)測量增強板(1)上面為基準至晶體板(2)上面 之高度,藉以控制晶體板(2 )之厚度。 藉由上述研磨,本實施例中,可形成具有平面度〇·2//π1 · /2mm CKP-V值)以下,平行度〇· 1 以下之高平面度 及咼平行度之晶體板(2)。由此,可形成不會發生副振動 而具有優良諧振特性之晶體板(2 )。517452 V. Description of the invention (13) It is suitable to be in the range of 15 to 20%. If the concentration of the phthalic adhesive is more than 20 ° I ° / ◦, the fluidity is poor, so that the problem that the adhesive is not easily dispersed uniformly may occur. Therefore, the concentration of the phthalic gum is preferably set in a range of 15% by mass to 20% by mass. Here, in the first embodiment, since both surfaces of the crystal plate (2) are mirror-finished and the surface of the reinforcing plate (1) is also mirror-finished, the reinforcing plate (1) and the crystal plate (2) are bonded. ), Interference fringes displayed at the joint interface between the crystal plate (2) and the reinforcing plate (1) can be observed by the optical plane method. As a result, the bonding state of the crystal plate (2) can be simply adjusted to have a high flatness based on the measurement results. The optical plane method refers to a method of displaying interference fringes on a measurement surface and observing the flatness from the interference fringes. After the bonding step of the reinforcing plate (1) and the crystal plate (2) shown in FIG. 6, as shown in FIG. 7, 'the reinforcing plate (1) and the crystal plate (2) are bonded, and the crystal plate (2) is ground. On the surface, the thickness of the crystal plate (2) is machined to a thickness of 20 mm or less. In this grinding process, first use F0 # 30 0 0 grindstone grains (particle size 3 ~ 6 #m) for rough grinding. Then, oxidized honing stone grains (average particle size: 0.5 m) were used as the final processing and grinding. In this grinding process, an electrical micrometer (e 丨 ec t r i c micro-meter) is used to measure the height from the top of the reinforcing plate (1) to the top of the crystal plate (2), so as to control the thickness of the crystal plate (2). Through the above-mentioned polishing, in this embodiment, a crystal plate (2 with a flatness of 0 · 2 // π1 · / 2mm CKP-V) or less, a high flatness of 以下 1 or less and a parallelism of 形成 can be formed. ). This makes it possible to form a crystal plate (2) having excellent resonance characteristics without causing side vibrations.

C:\2D-CODE\90-09\90114937.ptd 第17頁 517452 五、發明說明(14) 然後,如圖8之一點鏈線所示,將晶體板(2 ),例如用樹 脂(r e s i η)系磨石切割後,再把增強板(1 )和晶體板(2 )之 間的黏合劑(酞膠)用有機溶劑(丙酮)加以溶解,將晶體板 (2 )剝離增強板(1)。由此,可獲得如圖9所示之晶體板 (2)。 再者,晶體板(2 a )係本發明「壓電材料片」之一例。 在第1實施例之晶體振盪器步驟中,如上述,形成增強 板(1 )之溝(1 a ),同時將具流動性之黏合劑(1 7質量%之酞 ♦)注入該溝(1 a )中’則被導入溝(1 a)之具流動性之黏合 劑,即可簡單地浸透到增強板(丨)和晶體板(2 )之接合面, 形成均勻的黏合劑層。再將以該均勻之黏合劑層接合於增4 強板(1 )之晶體板(2 )加以研磨至既定之厚度,即可形成具 有N平行度及1¾平面度之晶體板。 又’將晶體板(2 )切割成既定之大小後,再溶解黏合劑 ’可簡單地將晶體板(2 )剝離增強板(1 ),而不必加物理力 量於晶體板(2 )上。其結果,可將晶體板(2 )剝離增強板 (1 ),而不致對晶體板(2 )之諧振特性造成不良影響。 又,在增強板(1)和晶體板(2 )黏合加壓之狀態下,將具 有流動性之黏合劑(1 7質量%之酞膠)導入,藉此可使增強 板(1 )之接合面和晶體板(2)之接合面互相接觸之狀態下, 將具有流動性之黏合劑導入該接合面,故可簡單地形成厚 度均勻之黏合劑層。 而且,上述第1實施例中,增強板(丨)之材料(A12 〇3 - T i C) ,其熱膨脹係數係與晶體板(2 )之熱膨脹係數近似者所形C: \ 2D-CODE \ 90-09 \ 90114937.ptd Page 17 517452 V. Description of the invention (14) Then, as shown by a dot chain line in FIG. 8, the crystal plate (2), for example, using resin (resi η ) After the grinding stone is cut, the adhesive (phthalein) between the reinforcing plate (1) and the crystal plate (2) is dissolved with an organic solvent (acetone), and the crystal plate (2) is peeled from the reinforcing plate (1). . Thereby, a crystal plate (2) as shown in Fig. 9 can be obtained. The crystal plate (2a) is an example of the "piezoelectric material sheet" of the present invention. In the crystal oscillator step of the first embodiment, as described above, a groove (1 a) of the reinforcing plate (1) is formed, and a flowable adhesive (17 mass% phthalophthalate) is injected into the groove (1 a ') is introduced into the groove (1 a) with a flowable adhesive, which can simply penetrate the joint surface of the reinforcing plate (丨) and the crystal plate (2) to form a uniform adhesive layer. Then, the crystal plate (2) bonded to the reinforcing plate (1) with the uniform adhesive layer is ground to a predetermined thickness, and a crystal plate having N parallelism and 1¾ flatness can be formed. Also, after the crystal plate (2) is cut to a predetermined size, and then the adhesive is dissolved, the crystal plate (2) can be simply peeled off the reinforcing plate (1) without applying a physical force to the crystal plate (2). As a result, the crystal plate (2) can be peeled from the reinforcing plate (1) without adversely affecting the resonance characteristics of the crystal plate (2). In addition, in a state where the reinforcing plate (1) and the crystal plate (2) are bonded and pressurized, a flowable adhesive (17% by mass of phthalic adhesive) is introduced, thereby bonding the reinforcing plate (1). In a state where the bonding surface of the surface and the crystal plate (2) are in contact with each other, an adhesive having fluidity is introduced into the bonding surface, so that an adhesive layer having a uniform thickness can be simply formed. Moreover, in the above-mentioned first embodiment, the material (A12 03-T i C) of the reinforcing plate (丨) has a coefficient of thermal expansion that is similar to that of the crystal plate (2).

C:\2D-C0DE\90-09\90114937.ptd 第 18 頁 517452C: \ 2D-C0DE \ 90-09 \ 90114937.ptd page 18 517452

f ’稭此可有效防止溫度變化時增強板(1)和晶體板間 妾合面發生熱應力。由此,可防止因增強板(丨)和晶體 (2)之間發生變形而導致平面度品質之低落。 (第2實施例) 參照圖1 0〜圖1 5,以下說明第2實施例之步驟。’ 首先,第2實施例中,經過與圖丨〜圖5所示第i實施例之 ^驟相同之步驟後,移至圖〗〇所示之步驟。圖丨〇所示之步 驟中,係於設有複數之溝(113)之增強板(1)之接合表面上 黏合晶體板(2 )之狀態下加壓。該加壓方法,與第i實施例 相同,係以2 0 X 1 04Pa〜30 X 1〇4pa之加壓力押壓於晶體板 (2 )之上部者。再者,溝(丨丨a)係本發明之「凹部」之一 j 例,晶體板(2 )係本發明之「壓電材料構成之基板」之一 例。 在此種狀態下’將熱固性黏合劑注入增強板(丨丨)和晶體 板(1 2 )之接合面之側面端部,而該增強板(丨丨)和晶體板 (1 2)係與丨構(iia)之延伸方向形成直角者。由此,可使熱 固性黏合劑浸透到增強板部分(丨丨c )之表面。該熱固性黏 合劑,可採用例如艾伯耳黏合劑(莫伯耳史蒂克公司製)。 然後’與圖6所示第1實施例之步驟相同,將臘系黏合劑 (1 7夤量%之酜膠)注入增強板(1 1 )之溝(1 1 a )。由此,酞膠 會浸透到位於溝(1 la)之間的增強板部分(llc)之表面。 然後,在上述加壓力加壓於晶體板(丨2)上部之狀態下 以約1 0 0 °C加熱約1 2個小時。由此,可使晶體板(丨2 )接合 於增強板(11)。f 'This can effectively prevent thermal stress from occurring at the bonding surface between the reinforcing plate (1) and the crystal plate when the temperature changes. Therefore, it is possible to prevent the flatness quality from being lowered due to the deformation between the reinforcing plate (丨) and the crystal (2). (Second Embodiment) The steps of the second embodiment will be described below with reference to Figs. 10 to 15. First, in the second embodiment, after the same steps as those in the i-th embodiment shown in FIGS. 1-5 to 5 are performed, the process moves to the steps shown in FIG. In the step shown in Fig. 丨, the pressure is applied while the crystal plate (2) is bonded to the joining surface of the reinforcing plate (1) provided with a plurality of grooves (113). This pressurizing method is the same as that in the i-th embodiment, in which the upper part of the crystal plate (2) is pressed with a pressure of 20 X 10 Pa to 30 X 104 Pa. Furthermore, the groove (a) is an example of the "recess" of the present invention, and the crystal plate (2) is an example of the "substrate made of a piezoelectric material" of the present invention. In this state, 'the thermosetting adhesive is injected into the side ends of the joint surface of the reinforcing plate (丨 丨) and the crystal plate (1 2), and the reinforcing plate (丨 丨) and the crystal plate (1 2) are connected to 丨The extending direction of the structure (iia) forms a right angle. Thus, the surface of the reinforcing plate portion (丨 丨 c) can be impregnated with the thermosetting adhesive. The thermosetting adhesive can be, for example, an Abel adhesive (manufactured by Moble Stark). Then, the same procedure as in the first embodiment shown in FIG. 6 is performed, in which a wax-based adhesive (17% by volume of rubber) is injected into the groove (1 1 a) of the reinforcing plate (1 1). As a result, the phthalic glue will permeate the surface of the reinforcing plate portion (llc) located between the grooves (11a). Then, it is heated at about 100 ° C for about 12 hours under the above-mentioned pressure and pressure on the upper part of the crystal plate (2). Thereby, the crystal plate (丨 2) can be joined to the reinforcing plate (11).

C:\2D-CODE\90-09\90114937.ptd 第19頁 517452 、發明說明(16) 之後,如圖1 1所示,研磨晶體板(丨2 )之上面,將晶體板 (^2)加工成2〇 “爪以下之厚度。此時之研磨條件,與第1實 知例相同。之後’如圖1 2所示,將晶體板(1 2 )切割成既定 之大小。 、/然後,如圖1 3所示,從增強板(;[丨)的背面將增強板(丨j ) 削到一點鏈線的位置。由此,如圖丨4所示,分離成晶體片 (j2a)和增強板部分(Ub)及(llc)之部分。將圖14所示之 部分浸潰到丙酮中,藉以溶解晶體片(丨2a)和增強板部分 (jib)之間及位於溝(Ua)内的臘系黏合劑(酞膠)。而位於 曰曰$片(12a)和增強板部分(llc)之間的熱固性黏合劑則並 不溶解於丙i同中。藉此,可單獨將增強板部分(nb)從晶4 體片(12a)剝離下來。其結果,如圖15所示,形成只有增 ^板4为(11 c)接合在晶體片(j 2 a)表面上的形狀。再者, 晶體片(1 2 a)係本發明之「壓電材料片」之一例。 八第2實施例中,可經由上述步驟,簡單地形成增強板部 t(llc)接合在其一部分表面的晶體片(12a)。因此,搬運 晶體片(12a)時,可藉保持增強板部分(Uc)而簡單地搬 運。其結果,即使晶體片(丨2 a)被小型化了,仍可簡單地 處理晶體片(1 2 a )的搬運。 (第3實施例) 參照圖16〜24,以下說明第3實施例之步驟。 /第3實施例之步驟中,係採用表面形成許多氣孔的“ —211 系多孔質肥粒鐵作為增強板(21)。該赴―Zn系多孔質肥粒 鐵之形成方法’首先,在65-75質量%的FeO、15〜20質量%C: \ 2D-CODE \ 90-09 \ 90114937.ptd P.19 517452 After the description of the invention (16), as shown in Figure 11, grind the top of the crystal plate (丨 2), and place the crystal plate (^ 2) It is processed to a thickness of 20 "or less. The grinding conditions at this time are the same as those of the first known example. After that, as shown in Fig. 12, the crystal plate (1 2) is cut to a predetermined size. As shown in Figure 13, the reinforcing plate (丨 j) is cut to the position of a chain line from the back of the reinforcing plate (; [丨). Thus, as shown in Figure 丨 4, it is separated into a crystal plate (j2a) and The part of the reinforcing plate (Ub) and (llc). The part shown in FIG. 14 is immersed in acetone to dissolve the crystal plate (丨 2a) and the reinforcing plate (jib) and located in the groove (Ua). Wax adhesive (phthalein). The thermosetting adhesive located between the sheet (12a) and the reinforcing plate part (llc) is not dissolved in the acrylic resin. By this, the reinforcing plate can be separated. Part (nb) is peeled off from the crystal body (12a). As a result, as shown in FIG. 15, only the plate 4 is formed into a shape (11c) bonded to the surface of the crystal plate (j2a). Person, crystal The sheet (1 2 a) is an example of the "piezoelectric material sheet" of the present invention. In the eighth embodiment, the crystal plate (12a) having the reinforcing plate portion t (llc) bonded to a part of the surface can be simply formed through the above steps. Therefore, the crystal piece (12a) can be easily carried by holding the reinforcing plate portion (Uc). As a result, even if the crystal piece (1 2 a) is miniaturized, the handling of the crystal piece (1 2 a) can be easily handled. (Third Embodiment) Referring to Figs. 16 to 24, the steps of the third embodiment will be described below. / In the step of the third embodiment, "-211 series porous ferrous iron having a large number of pores on its surface was used as a reinforcing plate (21). The method of forming" Zn series porous ferrous iron "is first described at 65. -75% by mass of FeO, 15 ~ 20% by mass

C:\2D-CODE\90-09\90114937.ptd 517452 說明(17) " ---—__ 的MnO和1 0〜1 5質量%的211〇中,加上純水和A 1⑽(日本 :化高度粘膠纖維商品名稱)混合。並將該混合物予二假 k。該假燒係約以85(rc〜9〇(rc進行約4 —6個小時。然後, 使用球磨機(baU mill),將假燒過之混合物粉碎成約1 “ =3 // m的微粒子。並加上結合劑乾燥後形成流動性良好的 米刀末(成粒)。再用壓力機加以押固,形成所需形狀之壓縮 ,再以約1 2 〇 〇 C - 1 3 0 0 °C之高溫燒結。最後,施以研磨 最後加工’完成—Zn系多孔質肥粒鐵的尺寸和形狀。 又,若要形成高密度而氣孔少的肥粒鐵時,通常是在燒 結後以Η I P (熱靜水壓加壓機)加以高密度化。但是,本第3 實施例中,目的在形成多氣孔的多孔質肥粒鐵,故不作 鄱 HIP高密度化之處理。 如上述,形成Μη-Zn系多孔質肥粒鐵之增強板(21 )後, 如圖1 6所示,將增強板(2 1)佈置於圓盤形狀之載料台 (1 〇 0 )上。在此狀態下,對增強板(2丨)之表面施以鏡面加 工。該增強板(2 1 )之鏡面加工,與上述第1實施例相同, 以增強板(21 )之表面粗糙度加工至Ra值〇· 01 以下為 宜。若將如此鏡面加工過的Mn — Zn系多孔質肥粒鐵之增強 板(2 1 )剖面加以放大觀察,即呈如圖丨7所示之形狀。參照 圖1 7 ’可知增強板(2 1)之表面佈置著複數之結晶粒子 j (21a)。而該結晶粒子(2 ia)之間則形成氣孔(21b)。該氣 孔(2 1 b)即係本發明「凹部」之一例。 再者,多孔質肥粒鐵之氣孔(2 1 b )之密度,以4 0 0 0個 /mm2以上1 〇 〇 〇 〇個/ mm2以下為宜。其原因如下,即:若多孔C: \ 2D-CODE \ 90-09 \ 90114937.ptd 517452 Explanation (17) " -----__ of MnO and 10 to 15 mass% of 211〇, plus pure water and A 1⑽ (Japan : Chemical name of highly viscose fiber)). And the mixture is given two false k. The pseudo-firing is performed at about 85 (rc ~ 90) (rc for about 4-6 hours. Then, using a baU mill, the pseudo-firing mixture is pulverized into fine particles of about 1 "= 3 // m. After adding the binder to dry, it will form rice flour with good fluidity (granulate). Then press it with a press to form the desired shape of compression, and then press it at about 12,000 ° C-1300 ° C. High-temperature sintering. Finally, grinding and final processing are completed-the size and shape of the Zn-based porous ferrous iron. In order to form high-density ferrous iron with few porosity, it is usually sintered with Η IP ( (Hydrostatic hydrostatic press) to increase density. However, in the third embodiment, the purpose is to form porous ferrous iron with multiple pores. Therefore, the treatment of HIP densification is not performed. As described above, Mη- After the reinforcing plate (21) of Zn-based porous fertilizer grain iron, as shown in FIG. 16, the reinforcing plate (21) is arranged on a disc-shaped carrier (100). In this state, The surface of the reinforcing plate (2 丨) is mirror-finished. The mirror-finishing of the reinforcing plate (2 1) is the same as the first embodiment described above. The surface roughness of the reinforcing plate (21) is preferably processed to Ra value below 0.01. If the mirror-processed Mn-Zn porous ferrous iron reinforced plate (2 1) section is enlarged to observe, It has the shape shown in Figure 丨 7. Referring to Figure 17 ', it can be seen that a plurality of crystalline particles j (21a) are arranged on the surface of the reinforcing plate (21). And pores (21b) are formed between the crystalline particles (2 ia). ). This pore (2 1 b) is an example of the "recess" of the present invention. In addition, the density of the pores (2 1 b) of the porous ferrous iron is 4,000 / mm2 or more and 100%. 〇 / mm2 is preferable. The reason is as follows: if porous

C:\2D-CODE\90-09\90ll4937.ptd 第21頁 517452 五、發明說明(18) 質肥粒鐵之氣孔(2 1 b )之密度小於4 0 0 0個/mm2,則因氣孔 (2 1 b )之數減少而使填進氣孔(2 1 b )之黏合劑之量也減少。 其結果,發生黏合強度不足的問題。又,若多孔質肥粒鐵 之氣孔(2 lb)之密度超過1 0 0 0 0個/mm2,則因氣孔(2 lb)之 數增加而使增強板(2 1 )表面平坦品質低落。因此,在後述 之步驟中,研磨接合於增強板(2 1 )上的晶體板(2 3 )時,會 發生晶體板(2 3 )之平行度及平面度品質低落之問題。第3 實施例中,為防止此類問題,多孔質肥粒鐵之氣孔lb) 之密度,以40 0 0個/mm2以上1 0 0 0 0個/mm2以下為宜。 而且,多孔質肥粒鐵之氣孔(2 1 b )之表面平均孔徑,以5 // m以下為宜。其理由如下,即:若多孔質肥粒鐵之氣孔 參 (2 1 b )之表面平均孔徑,大於5 # m,則在後述之步驟中研 磨晶體板(2 3 )時,有時會因磨石之押壓力而使位於增強板 (2 1 )氣孔(2 1 b)上之晶體板(2 3 )之部分陷進氣孔而變形。 此時,會發生晶體板(23)平行度品質低落之問題。為防止 此類問題,第3實施例中,多孔質肥粒鐵之氣孔(丨b)之平 均孔徑,以小於5 /z m為宜。 繼圖1 6及圖1 7所示增強板(2 1 )鏡面加工之後,如圖丨8及 圖19所示,將臘系黏合劑(22)用毛刷等塗佈於增強板(21) 之接合表面上。該臘系黏合劑(22),與第i實施例相同, 使用具有低流動性黏度之黏合劑。也即,採用酞膠和· 以1 ·· 5之混合比率混合之具有丨7質量%之濃度之高流酞 膠。將具有此種1 7質量%濃度之高流動性酞膠(黏合 )塗佈於增強板(21)上。該黏合劑(22),如圖19所示^ 517452 五、發明說明(19) 進增強板(21)之表面氣孔(21b)内,同時以既定之厚度形 成於增強板(2 1 )之表面上。 再者,以丙酮稀釋而具流動性之酞膠所形成之黏合劑 (2 2 ),於塗佈後,丙g同成分會蒸發。因此,狄膠所形成之 .占合劑(2 2 )會呈固體化之狀態。 乂 如此黏合劑(2 2 )呈固體化後,研磨黏合劑(2 2 ),去除位 於増強板(21)表面之黏合劑(22)。藉此,如圖2〇所示,只 在增強板(21)表面之氣孔(21b)内填進黏入劑(22),氣孔 (川)以外之增強板(21)表面則呈沒有;:;;((』;之; 態。 然後,如圖2 1所示,將兩面施以鏡面加工之晶體板(2 3 )馨 貼於增強板(2 1 )之接合表面上加壓黏合。該加壓黏合之步 驟’係以2 0 X 1 04Pa-30 X 1 〇4pa之壓力押壓晶體板(23)之上 部,同時用約100 °C之溫度加熱約3-12個小時。藉此,原 先填進增強板(2 1 )表面氣孔(2 1 b )内之黏合劑(2 2 )再度呈 熔融狀態,藉由該黏合劑(2 2 ),使增強板(2 1 )與晶體板 (2 3 )接合。此時,加熱時間以約丨〇〜丨2個小時為宜。因為 ’如此可避免因晶體板之收縮率之差而發生晶體板之變形 ’而予以接合。再者,晶體板(2 3 )係本發明之「壓電材料 所構成之基板」之一例。 如上述,將晶體板(23)接合於增強板(21)後,如圖22所❿ 示,在增強板(21 )與晶體板(23)接合之狀態下,研磨晶體 板(2 3 )之表面。藉此,將晶體板(2 3 ) 加工成20/zm以下之 厚度。該步驟中之研磨條件,與上述第1實施例相同。C: \ 2D-CODE \ 90-09 \ 90ll4937.ptd Page 21 517452 V. Description of the invention (18) The density of the pores (2 1 b) of the fertile grain iron is less than 4 0 0 / mm2, because of the pores The number of (2 1 b) is reduced, so that the amount of the adhesive filling the air inlet hole (2 1 b) is also reduced. As a result, a problem of insufficient adhesive strength occurs. In addition, if the density of the pores (2 lb) of the porous ferrous iron exceeds 100 000 holes / mm2, the number of the pores (2 lb) increases, and the quality of the flatness of the surface of the reinforcing plate (2 1) is deteriorated. Therefore, in the steps described later, when the crystal plate (2 3) bonded to the reinforcing plate (2 1) is ground, a problem occurs in that the parallelism and flatness of the crystal plate (2 3) are deteriorated. In the third embodiment, in order to prevent such problems, the density of the pores lb) of the porous ferrous iron is preferably not less than 40,000 pieces / mm2 and not more than 100,000 pieces / mm2. In addition, the average surface pore diameter of the pores (2 1 b) of the porous ferrous iron is preferably 5 // m or less. The reason is as follows: If the average surface pore diameter of the pores (2 1 b) of the porous fertilizer grain iron is larger than 5 # m, the crystal plate (2 3) may be ground due to grinding in the steps described later. The pressure of the stone causes the part of the crystal plate (2 3) located on the air hole (2 1 b) of the reinforcing plate (2 1) to sink into the air inlet hole and deform. At this time, a problem arises that the parallelism quality of the crystal plate (23) is low. To prevent such problems, in the third embodiment, the average pore diameter of the pores (丨 b) of the porous ferrous iron is preferably less than 5 / z m. Following mirror processing of the reinforcing plate (2 1) shown in FIGS. 16 and 17, as shown in FIGS. 8 and 19, a wax-based adhesive (22) is applied to the reinforcing plate (21) with a brush or the like. Of the joint surface. This wax-based adhesive (22) is the same as that in the i-th embodiment, and uses an adhesive having a low fluidity viscosity. That is, a phthalic glue and a high-flow phthalic glue having a concentration of 7% by mass, which is mixed at a mixing ratio of 1 to 5. A highly fluid phthalic adhesive (adhesive) having such a concentration of 17% by mass is applied to a reinforcing plate (21). The adhesive (22) is shown in FIG. 19 ^ 517452 V. Description of the invention (19) enters the surface pores (21b) of the reinforcing plate (21) and is formed on the surface of the reinforcing plate (2 1) at a predetermined thickness. on. In addition, the adhesive (2 2) formed by the phthalic rubber diluted with acetone and having flowability, after coating, the same component of acrylic g will evaporate. Therefore, the .zhan mixture (2 2) formed by diex will be in a solid state.乂 After the adhesive (2 2) is solidified in this way, the adhesive (2 2) is ground to remove the adhesive (22) located on the surface of the stubborn plate (21). Therefore, as shown in FIG. 20, only the adhesive (22) is filled in the air holes (21b) on the surface of the reinforcing plate (21), and the surface of the reinforcing plate (21) other than the air holes (Sichuan) is absent; ; ((”; 之;” state. Then, as shown in FIG. 21, the crystal plate (2 3) with mirror processing on both sides is attached to the bonding surface of the reinforcing plate (2 1) under pressure and bonded. The step of pressure bonding is to press the upper part of the crystal plate (23) with a pressure of 20 X 1 04Pa-30 X 1 〇4pa, and heat it at about 100 ° C for about 3-12 hours. The adhesive (2 2) originally filled into the pores (2 1 b) on the surface of the reinforcing plate (2 1) was once again in a molten state. With the adhesive (2 2), the reinforcing plate (2 1) and the crystal plate ( 2 3) Bonding. At this time, the heating time is preferably about 丨 0 ~ 丨 2 hours. Because 'this can avoid the deformation of the crystal plate due to the difference in the shrinkage of the crystal plate', the bonding is performed. Furthermore, the crystal The plate (2 3) is an example of the "substrate made of a piezoelectric material" of the present invention. As described above, after the crystal plate (23) is bonded to the reinforcing plate (21), as shown in FIG. (21) The surface of the crystal plate (2 3) is ground in a state of being bonded to the crystal plate (23). Thereby, the crystal plate (2 3) is processed to a thickness of 20 / zm or less. The grinding conditions in this step, This is the same as the first embodiment.

第23頁 517452Page 517 452

517452517452

五、發明說明(21) 板(2 3 )之諧振特性起變化。 # ΐ从ί3實施例中,與上述第丨實施例相較, _ 板之材料效率。也即 ‘ ,研磨接合於增強板( j二如圖7所不步驟中 之晶體板⑴之部分,(右板(门2)0”位於溝(la)上5. Description of the invention (21) The resonance characteristics of the plate (2 3) change. # ΐFrom the embodiment 3, compared with the first embodiment, the material efficiency of the plate. That is, ′, the part bonded to the reinforcing plate (j 2 is the part of the crystal plate 中 in the step shown in Fig. 7, (right plate (gate 2) 0) is located on the groove (la)

甲、切〇]日日脰板(2)時’採用位於溝(la)部分以外之部分 作為晶體板(2 a)。相及土士 黛qA 祐I省々六产 相反地弟3貝^例中,因增強板(21) 二…溝=存在,在圖23所示之步驟中,切割晶體板(23) %,可採用所有部分作為晶體板(23a)(參照圖24)。直结 果,第3實施例之製造方法,與第丨實施例相較,可提升晶(A, cut 0) In the case of the plate (2), the portion outside the groove (la) is used as the crystal plate (2a). In the case of Toasty, qA, and I, the third place in the province, the third place. In the example, because the reinforcing plate (21) two ... groove = exists, in the step shown in FIG. 23, the crystal plate (23)% is cut, All parts can be adopted as the crystal plate (23a) (refer to FIG. 24). As a direct result, compared with the first embodiment, the manufacturing method of the third embodiment can improve the crystal

體板(2 3 )之材料效率。 尸又,第3實施例中,將黏合劑(酞膠)導入增強板(21)之 氣孔(2 1 b)内及增強板(2 1)之表面上之後,將增強板(2 j ) 之氣孔(2lb)以外之部分之黏合劑(22)研磨去除,即可藉 此將黏合劑(2 2 )簡單地只填進增強板(2 1)之氣孔(2 1 b)中 。藉由該被填入氣孔(2 1 b)之黏合劑,在增強板(2 1 )和晶 體板(23)之接合面實質上並無黏合劑層存在之狀態下,可 將增強板(2 1 )和晶體板(2 3 )予以接合。 再者,第3實施例中,係將黏合劑(22)只留於增強板(21 )之氣孔(2 1 b)内之狀態下,使增強板(2 1)和晶體板(2 3 )加 壓黏合。此時,增強板(2 1)和晶體板(2 3 )加壓黏合之際, 若增強板(2 1 )和晶體板(2 3 )之間有空隙,則氣孔(2 1 b)内 之黏合劑(22)有時會滲出到增強板(21)和晶體板(23)之接 合界面。但是,即使黏合劑(2 2 )會滲出到接合界面,該滲Material efficiency of the body board (2 3). In the third embodiment, after the adhesive (phthalein) is introduced into the pores (2 1 b) of the reinforcing plate (21) and on the surface of the reinforcing plate (21), the reinforcing plate (2 j) is The adhesive (22) other than the pores (2lb) is ground and removed, so that the adhesive (2 2) can be simply filled into the pores (2 1 b) of the reinforcing plate (2 1). With the adhesive filled in the pores (2 1 b), the reinforcing plate (2) can be placed in a state where the bonding surface of the reinforcing plate (2 1) and the crystal plate (23) is substantially free of an adhesive layer. 1) and the crystal plate (2 3). In addition, in the third embodiment, the adhesive (22) is left in the pores (2 1 b) of the reinforcing plate (21), and the reinforcing plate (2 1) and the crystal plate (2 3) are used. Pressure bonding. At this time, when the reinforcing plate (2 1) and the crystal plate (2 3) are pressure-bonded, if there is a gap between the reinforcing plate (2 1) and the crystal plate (2 3), the air hole (2 1 b) The adhesive (22) may ooze out to the joint interface between the reinforcing plate (21) and the crystal plate (23). However, even if the adhesive (2 2) oozes to the bonding interface, the bleed

C:\2D-C0DE\90-09\90114937.ptd 第25頁 517452 五、發明說明(22) ::黏合劑層僅為0 · 1 " m以下之極薄厚度。因此,不會發 ‘厚度厚的黏合劑層存在於增強板(21 ) s ^ 面時-樣,使加工後的晶體板(23)之平;;(及23平): 度口口貝低落的毛病,故無問題。 =者,本次所揭示之實施例,當視為一切均屬範例而非 义I性者。本發明之範圍,非以上述實施例之說明而係以 申请專利範圍來揭示,更包括與申請專利範圍均等之意味 及申凊範圍内之一切變更。 例如,上述第1及第2實施例中,係採用其熱膨脹係數近 似晶體板之熱膨脹係數之Hj3 —Tic作為增強板之材料,但 本發明不限於此,只要是近似晶體板之熱膨脹係數之材 料,也可使用其他材料。例如,晶體、鋁、石英玻璃等。 而且,即使其熱膨脹係數不近似晶體板之熱膨脹係數之材 料,也可使用。例如,使用Μη-Ζπ系或Ni-Zn系肥粒鐵材 料,也可。若使用此種加工性高之肥粒鐵,有容易加工之 優點。 又,上述第1及第3實施例中,係採用具有丨7質量%濃度 之酞膠作為有流動性的黏合劑,但本發明不限於此,〇 是具有流動性之黏合劑,即使使用其他黏合劑,'也可獲^ 同樣之效果。例如,直接使用不加溶劑之ALC〇WAX(日化精 工公司製),也可。再者,本發明中使用之具流動性之黏 合劑,在loot之條件下,以具#10cp_3〇cp左右之流動魅 度之黏合劑為宜。 又,上述第1及第2實施例巾,係將增強板之溝形成矩形 C:\2D-CODE\90-09\90114937.ptd 517452 五、發明說明(23) 形狀,但本發明不p 溝’也可獲得同樣二:^,:使是v字形狀或其他形狀之 微小之凹凸,由該凹2。:戈更進-,’在增強板表面設 將此類溝及微小之^導:黏合劑’也可。本發明中,係 <凹凸,總稱為凹部。 又,上述第1及箓9 6 丄 貫通至增強板兩邊2㈣:,將增強板之溝形成延伸 強板兩邊端部。也mr ,不必延伸貫通至增 板盥晶體板之接i 溝,只要至少延伸到增強 =1、 接合部分之端部即可。如此,在增強板盥曰 二::之,也可從增強板與晶體板之接合部;: 邛之凹部,_間早地導入黏合劑。 又’第3實施例中,係採用Mn-Zn系多孔質肥粒鐵作為增 強板(21 ),但本發明不限於此,使用Ni—Ζιι系多孔質肥粒 鐵’也可。又’使用多孔質肥粒鐵以外之多孔質陶曼,也 T獲付同樣之效果。例如,使用多孔質銘或多孔質碳,也 可。又’不限於多孔質陶瓷,只要是接合表面具有氣孔之 增強板,也可獲得同樣之效果。 又,上述第3實施例中,係以具流動性之黏合劑(丨7質量 %之酞膠)塗佈於增強板(2 1 )之表面之後,再將氣孔(2 1 b) 以外部分之黏合劑(2 2 )藉研磨去除,而只在氣孔(2 1 b)内 留下黏合劑(2 2 ),但本發明不限於此,使用黏合劑之塗佈 及研磨以外之方法,在氣孔(2 1 b )内留下黏合劑(2 2 ),也 可。 又,上述第1〜3實施例中,係顯示使用晶體板作為壓電 材料所構成之基板之一例,但本發明不限於此,可使用晶C: \ 2D-C0DE \ 90-09 \ 90114937.ptd page 25 517452 V. Description of the invention (22) :: The adhesive layer is only extremely thin at 0 · 1 " m. Therefore, no thick adhesive layer is present on the reinforcing plate (21) s ^ surface, so that the processed crystal plate (23) is flat; (and 23 flat): the degree of mouth is low There are no problems. =, The embodiments disclosed this time should be regarded as all examples, not meanings. The scope of the present invention is disclosed not by the description of the above embodiments but by the scope of patent application, and also includes the meaning equivalent to the scope of patent application and all changes within the scope of the patent application. For example, in the first and second embodiments described above, Hj3-Tic whose thermal expansion coefficient is similar to that of the crystal plate is used as the material of the reinforcing plate, but the present invention is not limited to this, as long as it is a material that approximates the thermal expansion coefficient of the crystal plate , Other materials can also be used. For example, crystal, aluminum, quartz glass, and the like. Moreover, even materials whose thermal expansion coefficient does not approximate that of the crystal plate can be used. For example, a Mn-Zπ-based or Ni-Zn-based ferrous iron material may be used. If such fertile iron with high workability is used, it has the advantage of being easy to process. In addition, in the first and third embodiments, a phthalic adhesive having a concentration of 7% by mass was used as the adhesive with fluidity, but the present invention is not limited to this. 〇 is an adhesive with fluidity, even if other Adhesive, 'can also achieve the same effect ^. For example, ALCWAX (manufactured by Nippon Chemical Co., Ltd.) may be used without any solvent. Furthermore, the adhesive with fluidity used in the present invention is preferably an adhesive with a flow charm of about # 10cp_30cp under the condition of loot. In addition, the towels of the first and second embodiments are formed by forming the grooves of the reinforcing plate into a rectangular shape C: \ 2D-CODE \ 90-09 \ 90114937.ptd 517452 5. Description of the invention (23) Shape, but the present invention does not p groove 'The same two can be obtained: ^ ,: the concave and convex of the v-shape or other shapes, and the concave 2. : 戈 更 进-, ’It is also possible to provide such grooves and minute guides: adhesives on the surface of the reinforcing plate. In the present invention, it is < concave and convex, and is generally referred to as a concave portion. In addition, the above-mentioned first and 箓 9 6 丄 penetrate to both sides of the reinforcing plate 2㈣: the grooves of the reinforcing plate are formed to extend the ends of both sides of the reinforcing plate. Also mr, it is not necessary to extend through to the groove of the connecting plate of the increase plate, as long as it extends at least to the end of the reinforced = 1, joint portion. In this way, in the reinforced board: 2: It is also possible to introduce the adhesive from the joint of the reinforced board and the crystal board; In the third embodiment, Mn-Zn-based porous fertilizer iron is used as the reinforcing plate (21). However, the present invention is not limited to this, and Ni-Zim-based porous fertilizer iron may be used. Also, the use of porous Taurman other than porous ferrous iron has the same effect. For example, porous pores or porous carbon may be used. It is not limited to porous ceramics. The same effect can be obtained as long as the reinforcing plate has pores on the bonding surface. In addition, in the third embodiment described above, the surface of the reinforcing plate (2 1) was coated with a flowable adhesive (丨 7 mass% phthalic adhesive), and then the other parts of the pores (2 1 b) The adhesive (2 2) is removed by grinding, and only the adhesive (2 2) is left in the pores (2 1 b). However, the present invention is not limited to this. The method other than coating and grinding the adhesive is used in the pores. (2 1 b) may leave the adhesive (2 2). In the first to third embodiments, an example of a substrate made of a crystal plate as a piezoelectric material is shown. However, the present invention is not limited to this. A crystal may be used.

C:\2D-CODE\90-09\90114937.ptd 第27頁 517452 五、發明說明(24) 體以外之,例如,鋼嫁石夕化物(La3Ca5Si〇4)、 :酸鐘(tanta:lc acid lithium)或ln(un叫:銳酸: 獲得同樣之效果。 卄所構成之基板,也可 也即,在增強板形成凹部(溝或氣孔), 性之黏合劑導入該凹部,藉此可將 、' 机動 所構成之基板以既定之強度予強::上 黏合劑接合於增強板之壓電材料所;成:j板,C: \ 2D-CODE \ 90-09 \ 90114937.ptd Page 27 517452 V. Description of the invention (24) Except for the body, for example, steel dopant (La3Ca5Si〇4), tanta: lc acid lithium) or ln (un called: sharp acid: the same effect can be obtained. The substrate made of , can also form a recess (groove or pore) in the reinforcing plate, and a sexual adhesive is introduced into the recess, so that the recess can be introduced. , 'The substrate formed by the motor is strengthened with a predetermined strength: the upper adhesive is bonded to the piezoelectric material of the reinforcing plate;

f,可形;具有高平行度及平面度之ί:;:所:::A 板。又’由於黏合劑声可简置士 土 故於壓雷材枓所::有機溶劑等予以溶解, 料所ί 板加工*,將增強板剝離壓電材 :0”只要溶解黏合劑層,π必加物理性之 電,料所構成之基板,即可剝離增_。藉此, 可有效防止屬電材料所構成基板之諧振特性發生變化。如 此,、在維,壓電材料所構成基板之諧振特性之狀態下,可 形成具有高平行度及平面度之壓電材料所構成之基板。 又,上述第1〜3實施例中,係舉振盪器之製造方法之例 來說明壓電元件之製造方法’但本發明不限於此,可廣泛 適用於濾'片等其他壓電元件之製造方法。 又,上述第3實施例中,如圖16〜圖21所示,係以圓盤 形狀之載料台(1〇〇)上佈置複數個具有氣孔之增強板(21) 之後,再利用黏合劑針對該增強板(21)將晶體板(23)接合 上去之例來說明,但本發明不限於此,作為第3實施例, 如圖25所#’不必使用载料台’而準備具有氣孔之例如f, shapeable; ί:;: 所 ::: A plate with high parallelism and flatness. Also, because the adhesive sound can be simply settled, it is dissolved in the mine material :: organic solvent, etc., the material is processed, the plate is processed, and the reinforcing plate is peeled from the piezoelectric material: 0 "as long as the adhesive layer is dissolved, π Physical electricity must be added, and the substrate made of materials can be peeled off. This can effectively prevent the resonance characteristics of substrates made of electrical materials from changing. In this way, in the dimension, substrates made of piezoelectric materials In the state of resonance characteristics, a substrate made of a piezoelectric material having high parallelism and flatness can be formed. In addition, in the above-mentioned first to third embodiments, an example of a method for manufacturing an oscillator is used to explain the piezoelectric element. Manufacturing method 'However, the present invention is not limited to this, and can be widely applied to manufacturing methods of other piezoelectric elements such as filters. In addition, in the third embodiment described above, as shown in FIGS. 16 to 21, a disc shape is used. After arranging a plurality of reinforcing plates (21) with pores on the carrier table (100), an example of bonding the crystal plate (23) to the reinforcing plate (21) by using an adhesive is described, but the present invention does not Limited to this, as a third embodiment, as shown in FIG. 25 # Stage without using carrier material 'is prepared having pores of e.g.

imii C:\2D-CODE\90-09\90114937.ptd 第28頁imii C: \ 2D-CODE \ 90-09 \ 90114937.ptd Page 28

517452 五、發明說明(25) 60· X 6 0mm X 7mm之大型增強板(31 ),同時在該大型增強 板(3 1 )上佈置複數個(本變形例中使用丨2個)晶體板(壓電 材料所構成之基板)(2 3 ),再利用黏合劑針對該增強板 (2 1 )將晶體板(2 3 )接合上去,也可。若採取此種結構,則 由於不使用載料台,即可避免 生之熱而導致增強板與載料台 也可避免因增強板與載料台之 體板(壓電材料所構成之基板) 之問題。其結果,可提升晶體 基板)之平面度及平行度。 因增強板與晶體板接合時發 之間產生變形問題。由此, 間產生之變形問題而導致晶 之平面度及平行度品質低落 板(2 3 )(壓電材料所構成之517452 V. Description of the invention (25) A large reinforcing plate (31) of 60 · X 60 mm x 7 mm, and a plurality of (two in this modification example) crystal plates are arranged on the large reinforcing plate (3 1) ( The substrate (2 3) made of a piezoelectric material may be bonded to the reinforcing plate (2 1) by using an adhesive, and the crystal plate (2 3) may be joined. If this structure is adopted, the reinforcing plate and the material table can be avoided because the heat is not used because the material table is not used, and the body plate (the substrate made of piezoelectric material) can be avoided because of the reinforcing plate and the material table. Problem. As a result, the flatness and parallelism of the crystal substrate can be improved. Deformation problems occur between the reinforcing plate and the crystal plate when they are joined. As a result, the quality of the flatness and parallelism of the crystal is low due to the deformation problem that occurs between the plate (2 3) (made of piezoelectric material

[元件編號之說明] 1 增強板 la 溝 2 晶體板 2a 晶體片 11 增強板 11a 溝 lib 增強板部分 lie 增強板部分 12 晶體板 12a 晶體片 21 增強板 21a 結晶粒子 21b 氣孑L[Explanation of component number] 1 reinforced plate la groove 2 crystal plate 2a crystal plate 11 reinforced plate 11a groove lib reinforced plate portion lie reinforced plate portion 12 crystal plate 12a crystal plate 21 reinforced plate 21a crystal particle 21b

517452517452

C:\2D-CODE\90-09\90114937.ptd 第30頁 517452 圖式簡單說明 圖1為顯示本發明第1實施例中晶體振盪器步驟之透視 圖。 圖2為顯示本發明第1實施例中晶體振盪器步驟之透視 圖。 圖3為顯示本發明第1實施例中晶體振盪器步驟之透視 圖。 圖4為顯示本發明第1實施例中晶體振盪器步驟之透視 圖。 圖5為顯示本發明第1實施例中晶體振盪器步驟之透視 圖。 圖6為顯示本發明第1實施例中晶體振盪器步驟之透視 · 圖。 圖7為顯示本發明第1實施例中晶體振盪器步驟之透視 圖。 圖8為顯示本發明第1實施例中晶體振盪器步驟之透視 圖。 圖9為顯示本發明第1實施例中晶體振盪器步驟之透視 圖。 圖1 0為顯示本發明第2實施例中晶體振盪器步驟之透視 圖。 — 圖11為顯示本發明第2實施例中晶體振盪器步驟之透視 圖。 圖1 2為顯示本發明第2實施例中晶體振盪器步驟之透視 圖。C: \ 2D-CODE \ 90-09 \ 90114937.ptd Page 30 517452 Brief Description of Drawings Figure 1 is a perspective view showing the steps of a crystal oscillator in the first embodiment of the present invention. Fig. 2 is a perspective view showing the steps of the crystal oscillator in the first embodiment of the present invention. Fig. 3 is a perspective view showing the steps of the crystal oscillator in the first embodiment of the present invention. Fig. 4 is a perspective view showing the steps of the crystal oscillator in the first embodiment of the present invention. Fig. 5 is a perspective view showing the steps of the crystal oscillator in the first embodiment of the present invention. Fig. 6 is a perspective view showing the steps of the crystal oscillator in the first embodiment of the present invention. Fig. 7 is a perspective view showing the steps of the crystal oscillator in the first embodiment of the present invention. Fig. 8 is a perspective view showing the steps of the crystal oscillator in the first embodiment of the present invention. Fig. 9 is a perspective view showing the steps of the crystal oscillator in the first embodiment of the present invention. Fig. 10 is a perspective view showing the steps of the crystal oscillator in the second embodiment of the present invention. — FIG. 11 is a perspective view showing the steps of the crystal oscillator in the second embodiment of the present invention. Fig. 12 is a perspective view showing the steps of a crystal oscillator in a second embodiment of the present invention.

C:\2D-C0DE\90-09\90I14937.ptd 第31頁 517452 圖式簡單說明 圖1 3為顯示本發明第2實施例中晶體振盪器步驟之透視 圖。 圖1 4為顯示本發明第2實施例中晶體振盪器步驟之透視 圖。 圖1 5為顯示本發明第2實施例中晶體振盪器步驟之透視 圖。 圖1 6為顯示本發明第3實施例中晶體振盪器步驟之透視 圖。 圖1 7為圖1 6所示步驟中增強板之放大剖面圖。 圖1 8為顯示本發明第3實施例中晶體振盪器步驟之透視 圖。 圖1 9為圖1 8所示步驟中增強板之放大剖面圖。 圖2 0為顯示本發明第3實施例中晶體振盪器步驟之放大 剖面圖。 圖2 1為顯示本發明第3實施例中晶體振盪器步驟之透視 圖。 圖2 2為顯示本發明第3實施例中晶體振盪器步驟之透視 圖。 圖2 3為顯示本發明第3實施例中晶體振盪器步驟之透視 圖。 圖2 4為顯示本發明第3實施例中晶體振盪器步驟之透視 圖。 圖2 5為顯示本發明第3實施例之變形例中晶體振盪器步 驟之透視圖。C: \ 2D-C0DE \ 90-09 \ 90I14937.ptd Page 31 517452 Brief Description of Drawings Figure 13 is a perspective view showing the steps of the crystal oscillator in the second embodiment of the present invention. Fig. 14 is a perspective view showing the steps of the crystal oscillator in the second embodiment of the present invention. Fig. 15 is a perspective view showing the steps of the crystal oscillator in the second embodiment of the present invention. Fig. 16 is a perspective view showing the steps of a crystal oscillator in a third embodiment of the present invention. FIG. 17 is an enlarged sectional view of the reinforcing plate in the step shown in FIG. 16. Fig. 18 is a perspective view showing the steps of a crystal oscillator in a third embodiment of the present invention. FIG. 19 is an enlarged sectional view of the reinforcing plate in the step shown in FIG. 18. Fig. 20 is an enlarged sectional view showing the steps of the crystal oscillator in the third embodiment of the present invention. Fig. 21 is a perspective view showing the steps of the crystal oscillator in the third embodiment of the present invention. Fig. 22 is a perspective view showing the steps of the crystal oscillator in the third embodiment of the present invention. Fig. 23 is a perspective view showing the steps of the crystal oscillator in the third embodiment of the present invention. Fig. 24 is a perspective view showing the steps of the crystal oscillator in the third embodiment of the present invention. Fig. 25 is a perspective view showing the steps of a crystal oscillator in a modification of the third embodiment of the present invention.

C:\2D-CODE\90-09\90114937.ptd 第32頁C: \ 2D-CODE \ 90-09 \ 90114937.ptd Page 32

Claims (1)

517452 曰 ^ ,---篆號9011細7 年 月 、'申請專利範圍 1&二種壓電元件之製造方法,其包括: 、增強板之表面形成凹部的步驟;以及 強:ΪΪ 凹部導入具有流動性之黏合劑,藉以使增 2 〃 i電材料所構成之基板相接合的步驟。 中·如申請專利範圍第丨項之壓電元件之製造方法,其 步驟前ΐΐϊ強板與前述壓電材料所構成之基板相接合之 板加以厂將前述增強板與前述壓電材料所構成之基 合劑,狀態τ ’自前述凹部導入具流動性之黏 接合之板與前述壓電材料所構成之基板相 中3前利範圍第1或2項之麼電元件之製造方法,直 電材垃係至少延伸至前述增強板與前述壓 冓成之基板接合部分之端部而形成者。 中,·^ 1 =利範圍第1項之壓電元件之製造方法,直 前,成之基板與增強板接合之步驟之 板之接合面,進行鏡面與壓電材料所構成基 5.如申請專利範圍第丨項 前述增強板,#句括且士也I电兀*什&展k方法,其中 & U # 括具有熱膨脹係數與前述壓電材料所Μ 成基板之熱膨脹係數相近的材料 1坚电材枓所構 包6括如申請專利範圍第1項之壓電元件之製造方法,其更 前述壓電材料所構成之其> t 針對增強板之接合面增強,接合之步驟之後, ~電材料所構成基板之接合面,研 第33頁 517452517452 ^, --- No. 9011 in July, 'application patent scope 1 & two kinds of manufacturing methods of piezoelectric elements, including: a step of forming a concave portion on the surface of a reinforcing plate; and strong: 导入 The introduction of the concave portion has A step of bonding a substrate made of an additive material with a flowable adhesive. Medium · If the method of manufacturing a piezoelectric element according to item 丨 of the patent application range, before the steps, the plate where the strength plate and the substrate made of the aforementioned piezoelectric material are joined is processed by the factory to make the reinforcing plate and the aforementioned piezoelectric material. Base mixture, state τ 'Introducing the fluid-phase adhesive bonding plate and the substrate phase composed of the aforementioned piezoelectric material from the aforementioned recessed portion, the manufacturing method of the electric element of item 3 or 2 of the foregoing range, direct electric material It is formed by extending at least to the end of the joint portion of the reinforcing plate and the pressed substrate. In, ^ 1 = the manufacturing method of the piezoelectric element in the first range of the benefit range, the front surface of the substrate and the reinforcing plate in the step of joining the substrate, the mirror surface and the piezoelectric material constitute the base 5. If the patent is applied for Scope item 丨 the aforementioned reinforced plate, # sentence includes and also the electrical and electronic methods, where & U # includes a material with a thermal expansion coefficient similar to that of the substrate formed by the aforementioned piezoelectric material1 The piezo-electric material structure includes a method for manufacturing a piezoelectric element as described in item 1 of the patent application scope, which is further composed of the aforementioned piezoelectric material. T After the step of strengthening the bonding surface of the reinforcing plate, ~ Joint Surface of Substrates Made of Electrical Materials, P.33 517452 電材料所構成之基板從 ___案號90114937_年月 六、申請專利範圍 磨成既定之板厚度的步驟;以及 於研磨後藉黏合劑之溶解而將壓 增強板剝離的步驟。 7· —種壓電元件之製造方法,其係包括· 於增強板上形成凹部之步驟; 將前述壓電材料所構成之基板貼上增強板表面之狀離 下,由前述增強板與前述壓電材料所構成基板之接合^之 側端導入熱固性之第1種黏合劑,同時從前述增強板之凹 部導入具有流動性之第2種黏合劑,藉以使前述增強板盥 前述壓電材料所構成基板接合之步驟; 〃 在前述增強板與前述壓電材料所構成基板接合之狀態 下’將則述壓電材料所構成基板切割成既定之大小,藉以 形成壓電材料片之步驟;以及 將鈿述具有流動性之弟2種黏合劑予以溶解,藉以只使 經由第2種黏合劑接合於壓電材料片之前述增強板部分剝 離,而不剝離經由第1種黏合劑接合於壓電材料片之增強 板部分之步驟。 8 ·如申請專利範圍第1項之壓電元件之製造方法,其 中’形成於前述增強板表面之凹部,係包括形成於前述增 強板之至少接合表面之氣孔。 9 ·如申请專利範圍第8項之壓電元件之製造方法,其 中,具有如述氣孔之增強板,係包括多孔質陶瓷增強板 者0 1 0 ·如申請專利範圍第9項之壓電元件之製造方法,其The substrate made of electrical materials is from ___ Case No. 90114937_ June 6. The scope of patent application: the step of grinding to a predetermined plate thickness; and the step of peeling the pressure-reinforcing plate by dissolving the adhesive after grinding. 7 · —A method for manufacturing a piezoelectric element, comprising the steps of: forming a recess on a reinforcing plate; attaching a substrate made of the aforementioned piezoelectric material to the surface of the reinforcing plate, and removing the substrate from the reinforcing plate and the aforementioned pressure; A thermosetting first adhesive is introduced to the side of the substrate ^ of the substrate made of the electric material, and a second adhesive having fluidity is introduced from the concave portion of the aforementioned reinforcing plate, so that the aforementioned reinforcing plate is constituted by the aforementioned piezoelectric material. Substrate bonding step; 步骤 a step of cutting the substrate made of the piezoelectric material into a predetermined size to form a piezoelectric material sheet in a state where the foregoing reinforcing plate is bonded to the substrate made of the piezoelectric material; and The two adhesives with flowability are dissolved, so that only the aforementioned reinforcing plate bonded to the piezoelectric material sheet via the second adhesive is partially peeled off, and the piezoelectric material sheet is not peeled off via the first adhesive. Steps to strengthen the board. 8 · The method for manufacturing a piezoelectric element according to item 1 of the patent application, wherein the recess formed on the surface of the aforementioned reinforcing plate includes an air hole formed on at least the joint surface of the aforementioned reinforcing plate. 9 · The method for manufacturing a piezoelectric element according to item 8 of the patent application, wherein the reinforcing plate having the pores as described above includes a porous ceramic reinforcing plate 0 1 0 · The piezoelectric element according to item 9 of the patent application Manufacture method, which 517452 Λ_η 曰 修正 案號 90114937 六 t、申請專利範圍 中,前述多孔質陶瓷所構成之增強板,係包括選自多孔質 肥粒鐵、多孔質鋁及多孔質碳等材料群中之一種材料所構 成的增強板。 11 ·如申請專利範圍第1 〇項之壓電元件之製造方法,其 中,形成前述多孔質肥粒鐵之步驟,係包括: 燒結肥粒鐵成型體之步驟;以及 前述肥粒鐵成型體之燒結後,進行最後加工之步驟。 12.如申請專利範圍第1〇或11項之壓電元件之製造方 法,其中,前述多孔質肥粒鐵之氣孔密度,係在4〇〇〇個 /mm2以上’ 1〇 0 0 0個、#以下者。 中13.二申,請/:】範圍第10項之壓電元件之製造方法,其 :。别述夕孔貝肥粒鐵之氣孔的平均孔徑,係在…以下 1 4 · 一種壓電元件之製造方法,其 形成至少在接入#θ女广a ’、匕括· 將黏合劑導=:ί面具有亂孔之增強板的步驟; 1 V入則述增強板之氣孔的步驟· 將壓電材料所構成之基板接合, 驟;以及 ⑴现增強板表面上的步 針對接合於前述增 研磨的步驟。 電材料所構成之基板加以 1 5·如申請專利範 中,導入前述勒合劑之第步驟員之二電製造方法,其 孔以外部分之黏合劑去除之步驟4再將前述增強板之氣517452 Λ_η Amendment No. 90114937 Six-t. In the scope of the patent application, the reinforcing plate composed of the aforementioned porous ceramics is a kind of material selected from the group consisting of porous ferrous iron, porous aluminum, and porous carbon. Composition of reinforcing plates. 11. The method for manufacturing a piezoelectric element according to item 10 of the patent application scope, wherein the step of forming the aforementioned porous ferrous iron includes: a step of sintering the ferrous iron shaped body; and the aforementioned ferrous iron shaped body After sintering, the final processing step is performed. 12. The method for manufacturing a piezoelectric element according to item 10 or 11 of the scope of patent application, wherein the pore density of the aforementioned porous ferrous iron is 4,000 pieces / mm2 or more, 10,000 pieces, # Followings. Zhong 13. Second application, please /:] The method of manufacturing a piezoelectric element in the range of item 10, which:. In addition, the average pore diameter of the iron pores in the ferric grains of Xikongbei is based on the following: 1 · A method of manufacturing a piezoelectric element, which is formed at least in the connection of # θ 女 广 a ', and guides the adhesive = : the step of strengthening the plate with random holes on the surface; the step of stiffening the holes of the reinforcing plate in 1 V; joining the substrates made of piezoelectric material; Steps of grinding. The substrate made of electric material is added. 5 · As in the patent application, the second step of the electric manufacturing method of the aforementioned stepping agent is introduced. The step 4 of removing the adhesive outside the hole is the step 4 of the reinforcing plate. 4 * 517452 _案號90114937_年月曰 修正_ 六、申請專利範圍 1 6.如申請專利範圍第8項之壓電元件之製造方法,其 中,具有前述氣孔之增強板,係具有可在其上佈置複數個 上述壓電材料所構成之基板的大小。 1 7.如申請專利範圍第1項之壓電元件之製造方法,其 中,前述壓電材料所構成之基板,係含有晶體及鑭鎵矽化 物(1^3〇8581014)中之任一種者。4 * 517452 _Case No. 90114937_ Revised Year of the Month _ 6. Application for Patent Scope 1 6. The manufacturing method of the piezoelectric element according to item 8 of the Patent Scope, where the reinforcing plate with the aforementioned air holes is provided with A size of a substrate made of the plurality of piezoelectric materials is arranged on the substrate. 1 7. The method for manufacturing a piezoelectric element according to item 1 of the scope of the patent application, wherein the substrate made of the aforementioned piezoelectric material contains any one of a crystal and a lanthanum gallium silicide (1 ^ 3088581014). \\326\2d-\91-ll\90114937.ptc 第36頁\\ 326 \ 2d- \ 91-ll \ 90114937.ptc Page 36
TW90114937A 2000-07-17 2001-06-20 Method for manufacturing piezoelectric element TW517452B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000215281 2000-07-17
JP2000314110 2000-10-13
JP2001153562A JP2002190629A (en) 2000-07-17 2001-05-23 Method for manufacturing piezoelectric element

Publications (1)

Publication Number Publication Date
TW517452B true TW517452B (en) 2003-01-11

Family

ID=27344075

Family Applications (1)

Application Number Title Priority Date Filing Date
TW90114937A TW517452B (en) 2000-07-17 2001-06-20 Method for manufacturing piezoelectric element

Country Status (3)

Country Link
JP (1) JP2002190629A (en)
CN (1) CN1334608A (en)
TW (1) TW517452B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI637540B (en) * 2013-05-21 2018-10-01 日本碍子股份有限公司 Method for manufacturing piezoelectric device, piezoelectric device and piezoelectric independent substrate

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4830858B2 (en) * 2004-12-28 2011-12-07 日本電気株式会社 Piezoelectric ceramic actuator and portable device
JP5814774B2 (en) * 2010-12-22 2015-11-17 日本碍子株式会社 Composite substrate and method for manufacturing composite substrate
WO2017047605A1 (en) * 2015-09-15 2017-03-23 日本碍子株式会社 Composite substrate and method for estimating thickness trend of piezoelectric substrate
JP6097896B1 (en) * 2015-09-15 2017-03-15 日本碍子株式会社 Method for estimating thickness tendency of composite substrate and piezoelectric substrate
JP7271458B2 (en) * 2020-02-03 2023-05-11 信越化学工業株式会社 Composite substrate manufacturing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI637540B (en) * 2013-05-21 2018-10-01 日本碍子股份有限公司 Method for manufacturing piezoelectric device, piezoelectric device and piezoelectric independent substrate

Also Published As

Publication number Publication date
CN1334608A (en) 2002-02-06
JP2002190629A (en) 2002-07-05

Similar Documents

Publication Publication Date Title
CN102468385B (en) The manufacture method of composite base plate and composite base plate
TW517452B (en) Method for manufacturing piezoelectric element
CN101612722A (en) Polishing pad and manufacture method thereof
CN101096080A (en) Solidified abrasive lapping polishing pad having self-modifying function and preparation method
CN105164919A (en) Composite substrate for elastic wave element and elastic wave element
RU2010100771A (en) TOP-STRUCTURED ABRASIVE MATERIAL AND METHOD FOR PRODUCING AND USING IT
JP2009536108A5 (en)
CN109686530A (en) Flaked bonding material and magnetic work and preparation method thereof and purposes
JP5363092B2 (en) Method of manufacturing composite substrate for surface acoustic wave filter and composite substrate for surface acoustic wave filter
JP2009300735A5 (en)
Fang et al. Material removal in grinding sapphire wafers with brazed–diamond pellet plates
WO2001069676A3 (en) Method and apparatus for bonding substrates
WO2000076723A1 (en) Table of wafer polisher, method of polishing wafer, and method of manufacturing semiconductor wafer
TWI289093B (en) Method of manufacturing diamond disk
TWI265325B (en) Manufacturing method of optically laminated body, elliptic polarization plate formed by the laminated body, circular polarization plate and liquid crystal display apparatus
CN210650150U (en) Optical array crystal end face grinding clamp
CN113690364A (en) Composite piezoelectric substrate and preparation method thereof
JP5234780B2 (en) Composite substrate manufacturing method and composite substrate
JP2011165958A (en) Support substrate for laminated substrate, and method of manufacturing the same
JP2017135553A (en) Method for manufacturing piezoelectric composite substrate
TWI840819B (en) Adhesive film for wafer processing
TWI831435B (en) Method for substrate lapping
CN110499121B (en) Inorganic filler, high-temperature-resistant adhesive containing inorganic filler and preparation method of high-temperature-resistant adhesive
JP2005333100A (en) Support plate
JP2011190375A (en) Adhesion method, and abrasive-containing adhesive used in the same

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees