CN1331841A - Windowed non-ceramic package having embedded frame - Google Patents
Windowed non-ceramic package having embedded frame Download PDFInfo
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- CN1331841A CN1331841A CN99814836A CN99814836A CN1331841A CN 1331841 A CN1331841 A CN 1331841A CN 99814836 A CN99814836 A CN 99814836A CN 99814836 A CN99814836 A CN 99814836A CN 1331841 A CN1331841 A CN 1331841A
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- molding composite
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- 238000010992 reflux Methods 0.000 description 10
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
Abstract
An integrated circuit (IC) package includes a mold compound, a die, and a window. The mold compound has a frame embedded within it. The frame has a coefficient of thermal expansion that is less than the mold compound. The IC package is capable of being attached to a circuit board via a mass reflow process.
Description
Related application
This is that patent application serial numbers is the part continuation of 09/172,734 application, and this application was submitted on October 13rd, 1998, and exercise question is " with the imageing sensor of big circumfluence method (mass reflow) installation ".
Background of invention
1. invention field
The present invention relates to the integrated circuit encapsulation field.Particularly, this invention relates to the integrated circuit encapsulation that can be installed in big circumfluence method processing on the circuit board.
2. description of Related Art
Window type integrated circuit encapsulation can be used for multiple application, and integrated circuit is subjected to being positioned at illuminating or irradiation of light outside the integrated circuit encapsulation or other radiation source in these are used.Imageing sensor is exactly a kind of application of window type integrated circuit encapsulation.
For example, can in the encapsulation of window type integrated circuit, place a photodiode array.This photodetector array produces a kind of view data output according to the light that incides on this photodetector array.This photodetector array can be used for that image is caught or the application of other reconstruction of image.Together the light that shines on the described imageing sensor is carried out colour filter with a kind of color filter array (CFA) material and photodetector, just allow to form full-colour image.Each colour filter allows to see through on a kind of illumination to the one corresponding photodetector of predetermined color, can determine that so just this photodetector will detect the light of which kind of color.Optical sensor is divided into many groups are common to be used, just can determines to shine the color and the intensity of the light in a certain zone.
The available multiple technologies of integrated circuit (IC) encapsulation are installed on the circuit board, comprising: weld with big circumfluence method and artificial welding and hot bar encapsulation is welded on the circuit board.But artificial welding and hot bar weld the expense costliness and are slow processes.
Adopt the quick and operable automatically of big circumfluence method mounting circuit boards.The big backflow is meant that the temperature with the IC encapsulation is increased to one of about 215～225 ℃ multiple different technologies.On the temperature of this rising, the scolder on the surface-mounted integrated circuit pad is melted and is attached on the lead-in wire of IC encapsulation.After solder cools, the IC encapsulation just combines with pad securely.The big backflow comprises infrared, convection current and vapor phase technology.
It is more satisfactory than ceramic packaging to resemble the non-ceramic packaging of this class of window type Plastic Package, because this class encapsulation is more cheap than corresponding window type ceramic packaging.But, till now, following problem has all appearred in the normal window formula Plastic Package of being tested in big reflux technique: top cover has crackle, and tube core is peeled off from the tube core junction, and the seal cover that causes owing to the thermal expansion mismatch between the plastic and glass window separates.Up to now, the window type Plastic Package is installed on circuit board still uses this class technology of artificial welding, so that packaging body is unlikely to reach the temperature that big reflux technique raises.
Intel Company and Kyocera company unite the unsettled U.S. Patent application of submission, sequence number is 09/172,710, exercise question is for having described the non-ceramic packaging of a kind of window type in " the non-ceramic packaging of the window type that can reflux greatly ", and this encapsulation is well suited for the temperature requirement that big return circuit plate is installed.But wish to have a kind of method that can reduce internal stress.This will allow to reduce or eliminate the number of times that continues baking, and allows the encapsulation of large-size to use big circumfluence method.
Summary of the invention
A kind of integrated circuit (IC) encapsulation comprises: a molding composite, a tube core and a window.An embedded frame is arranged in the described molding composite.The thermal coefficient of expansion of this framework (CTE) is less than described molding composite.This IC encapsulation just can be fixed on the circuit board after big reflow treatment.
The accompanying drawing summary
Figure 1 shows that the applicant the cross-sectional view of improved window type four row flat packaging (QFP) 10.
Figure 2 shows that the embodiment schematic diagram of described package cap, comprise ceramic frame and windowpane.
Figure 3 shows that the embodiment schematic diagram of complete IC encapsulation.
Figure 4 shows that tube core is fixed on a kind of of processing method in the non-ceramic packaging of window type
Embodiment.
Figure 5 shows that the viewgraph of cross-section of the embodiment of the described molding composite that contains embedded frame.
Be respectively the distortion pattern of the IC that contains embedded frame and do not contain embedded frame when being encapsulated in 225 ℃ shown in Fig. 6 and 7.
Figure 8 shows that a kind of embodiment of embedded frame, its cross bar has connected each limit of this embedded frame.
Fig. 9 A and 9B are depicted as a kind of embodiment that can be used for embedding at molding composite a kind of mould of framework.
Figure 10 shows that a kind of picture system, this system comprises that a big circumfluence method of usefulness is fixed on the imageing sensor on the circuit board.
Describe in detail
What set forth is the improvement project that can encapsulate with the non-ceramic integrated circuit of window type (IC) that big circumfluence method is installed.Framework is embedded in the molding composite of this IC encapsulation.When temperature rose to the high temperature that is suitable for big backflow, this can reduce the internal stress of this IC encapsulation.
The applicant confirms, from the window type plastics QFP encapsulation of general headquarters the Kyocera of kyoto, Japan company is improved, it makes Plastic Package can bear big reflow treatment and top cover do not occur and break away from the phenomenon that this molded packages or tube core are peeled off from this molded packages.In addition, this non-ceramic IC encapsulation can be combined with a kind of CFA material with high-temperature stability and make imageing sensor, this transducer is being subjected to also can keeping its color characteristics under the situation of big reflow treatment.
Below describedly be the IC that can reflux greatly encapsulation, just Intel Company and Kyocera company unite the U.S. Patent application of submission, sequence number is 09/172,710, exercise question is the description of " the non-ceramic packaging of the window type that can reflux greatly ".What further part was described is the improved IC encapsulation that embeds framework in molding composite.The non-ceramic packaging of the window type that can reflux greatly
Figure 1 shows that the cross-sectional view of the window type QFP encapsulation 10 that can reflux greatly.Non-ceramic moulding encapsulation 12 constitutes the main body of this encapsulation.A kind of embodiment is: the encapsulation of non-ceramic moulding is made by a kind of plastics of low water content, as the o-Hydroxytoluene Novolac molding composite of a kind of low water content of Kyocera company exploitation.Recess 22 is made this encapsulation is removed in the back with jemmy position for molded packages in the embodiment.The material behavior of a kind of low water content molding composite of Kyocera company enumerated in appendix 1.
Tube core connects 14 and is used for fixing tube core 16 on the throne.It is a kind of epoxy resin of soft that tube core in the embodiment connects 14, fills silver epoxy as general headquarters what the Ablestik electronic material of california Rancho Dominguez and adhesive company produced.
Welding wire joint 18 is fixed on tube core 16 on the lead frame 20.Selected tube core connection 14 can stand the high temperature of big reflow treatment.The problem that may occur in big reflux course is that tube core 16 is peeled off from tube core connection 14 or molded packages 12.Applicant decision connects tube core to be carried out for two steps and handles and solve this problem, discussed to this with reference to Fig. 3 in the back.
Top cover 30 seals molded packages.In the embodiment: top cover 30 comprises a ceramic frame 32 of being made by alumina.This ceramic frame 32 is being fixed transparent window; Windowpane 34 is set in the concave edges place of ceramic frame 32; A kind of bisphenol-A based epoxy resin sealing of described molded packages 12 and ceramic frame 32 usefulness.This epoxy resin also can be used for ceramic frame 32 and windowpane 34 sealing-ins.The characteristic of the bisphenol-A class sealant that is suitable for the present invention's use summed up in appendix 2.
Because the die-size bigger (can meet or exceed 240 mils) of complementary metal oxide semiconductors (CMOS) (CMOS) imageing sensor, therefore, this improved window type encapsulation is particularly suitable for this imageing sensor, but is not limited to this.The embodiment of this encapsulation is suitable for the imageing sensor that window is slightly larger than the tube core photosensitive area.
In one embodiment, described window is about 1.2 times of tube core photosensitive area.But the size of window changes according to its distance apart from tube core.Fig. 2 and 3 is depicted as the embodiment schematic diagram of described top cover and molded packages.
Figure 2 shows that a kind of embodiment schematic diagram of described package cap 30, comprise ceramic frame 32 and windowpane 34.First size unit is a mil, and the dimensional units in the bracket is a millimeter.In this embodiment, glass window 34 is set in concave edges 40 places of ceramic frame 32.
Figure 3 shows that a kind of embodiment schematic diagram according to complete IC encapsulation 50 of the present invention.The first size unit of indicator elment is an inch, and second size (in the bracket) unit is a millimeter.Though shown in the framework of this embodiment be that (four row flat packaging-QFP), the lead frame of other type also can use for the lead frame of specific type.But also can use other encapsulation, and comprising: such as no lead packages such as ball grid array (BGA) encapsulation, leadless chip carrier (LCC) encapsulation, and such as lead packages such as dual in-line package or the like.
Figure 4 shows that the embodiment that tube core is fixed on the processing method on the non-ceramic packaging of window type.Connect at step 202 distribution tube core on the molded packages.As a kind of embodiment, as previously mentioned, the epoxy resin that this tube core connects by a kind of soft constitutes, as constituting by filling silver epoxy.
This process continues in piece 204, and when exerting pressure, this tube core obtains cleaning or moved forward with backward, connects so that described tube core is firmly fixed at described tube core.So, needn't form good bonding at the gold-plated smooth surface of tube core and this molded packages of also can realizing of this die back side.
Described tube core is connected piece 206 to carry out.It is very important to eliminate the space in tube core connects, and the space may cause peeling off problem.Turned out to be the space of eliminating in the tube core connection, the effects that two steps handled were handled well than a step.As a kind of embodiment, described tube core connects and will toast about one hour down at about 100 ℃, toasts under about 150 ℃ about one hour then again.
At piece 208, the welding wire joint is attached between the lead frame of described tube core and molded packages.
At piece 212, described top cover is attached on the molded packages.As a kind of embodiment: this top cover comprises with the bisphenol-A based epoxy resin and is fixed on windowpane 34 on the ceramic frame 32, and this epoxy resin is through baking processing; Realize that this processing is that temperature is risen to about 150 ℃ and lasting about 70 minutes; Described top cover is attached on the molded packages employed epoxy resin and windowpane 34 is attached on the ceramic frame 32 employed identical, and this epoxy resin also rises to about 150 ℃ of high temperature and continues about 70 minutes processing.
As a kind of embodiment, above-mentioned steps utilizes laminar flow hood to finish in the clean room of inferior 100 standard level, in other room of this level in each cubit rice the contaminant particle of contained micron or not enough micron be less than 100.This helps to prevent the pollution of particle to tube core between erecting stage.
In the embodiment, it is 20 microns cutting that described window has a specification.This cutting specification is represented admissible greatest drawback on glass.Big again defective may influence the imaging performance of described imageing sensor.
Before carrying out described big reflow treatment,, before the dress bag, can prolong the cycle of baking for the moisture in the encapsulation that reduces sealing.As a kind of embodiment, described sealed package was toasted 48 hours down at 125 ℃, carried out vacuum seal with moistureproof sack then so that store and transportation.Therefore this sealed package meets 4 grades of mounted on surface requirements that electronic circuit connects and encapsulate association (IPC).(IPC is that the electronics that has tame member more than 2300 in the world wide connects industrial trade association.)
Shown in piece 214, when the encapsulation of good seal has been ready to install, just can from this bag, take out and be installed on the circuit board with big circumfluence method.Polytype big reflow treatment method is arranged.As a kind of embodiment, employed is the big reflow treatment method of IR/ convection current, is undertaken by following step:
1) the package main body temperature is risen to about 225 ℃;
2) be higher than 215 ℃ and continue about 30 seconds;
3) be higher than 183 ℃ and continue about 140 seconds.
The non-ceramic packaging of described window type can stand above-mentioned big reflow treatment, and top cover and described molded packages is separated or tube core is peeled off from described molded packages phenomenon can not occur.The window of the band embedded frame that can reflux greatly props up non-ceramic packaging
Figure 5 shows that the viewgraph of cross-section of the embodiment of the described molding composite that contains embedded frame 300.This molding composite is surrounded described framework basically.(on this bottom surface, can surround or also can not surround this framework.) as a kind of embodiment, this framework is made of pottery, so that be complementary with the CTE of the ceramic frame at this IC package window edge.In another embodiment, described embedding framework is made of the material that is lower than molding composite CTE.For example, this framework can contain alloy-42 (a kind of alloy that contains 42% nickel and 58% iron) commonly used in copper/tungsten alloy or the lead-in wire.
Measure owing to the internal stress of IC encapsulation is very difficult, so pass through finite element modeling to this internal stress modelling, finite element modeling is used as the engineering verification instrument of Machine Design usually.The exemplary number of C TE value that shows described molding composite, tube core connection, silicon die, window sealant, window, ceramic frame and go between and in modeling, use of table 1.Table 1 also shows yang type modulus (a kind of index of representing toughness of material) and the Poisson's ratio of using in the modeling (when along cross directional stretch, representing a kind of indicative coefficient that is out of shape on this direction).
Material behavior under table 1. different temperatures
| Content | Modulus, kN/mm | CIE，ppm/℃ | Poisson's ratio * * * | ||||||
| 25℃ | 150℃ | 155℃ | 225℃ | 25℃ | 150℃ | 155℃ | 225℃ | ||
| Molding composite * | 14.4 | 14.4 | 2.1 | 2.1 | 11.4 | 11.4 | 48.1 | 48.1 | .23 |
| Tube core connects * | 8.0 | .08 | .08 | .08 | 25 | 25 | 130 | 130 | .3 |
| Silicon die | 130 | 130 | 130 | 130 | 2.6 | 3.2 | 3.2 | 3.6 | .23 |
| Window sealant * * | 4.2 | 4.2 | .045 | .045 | 62.1 | 62.1 | 186 | 186 | .35 |
| Windowpane | 72.9 | 72.9 | 72.9 | 72.9 | 6.8 | 7.5 | 7.5 | 7.9 | .208 |
| Ceramic window frame | 280.5 | 275.6 | 275.6 | 272.6 | 5.74 | 6.76 | 6.76 | 7.38 | .25 |
| Lead-in wire (alloy 42) | 145 | 145 | 145 | 145 | 4.5 | 4.5 | 4.5 | 4.5 | .3 |
* the vitrification point (Tg) for molding composite and sealant is 150 ℃.
The Tg that the * tube core connects is 103 ℃.
* * thinks that Poisson's ratio is a constant between 25～225 ℃.
According to last table, molding composite, tube core connect and the material behavior of sealant remains unchanged between its Tg at 25 ℃, can change into a different set of value in addition from Tg+5 ℃～225 ℃ then.The characteristic of silicon has reflected those [110] explanations.
Table 2 has been summed up the typical consequence that reduces IC encapsulation internal stress with the embedded frame that contains alloy-42.This typical consequence shows: between back tube core and the described molded packages and the IC that between top cover and described molded packages, contains epoxy resin interface encapsulate, the embedded frame that is had obviously reduces its internal stress.The reduction of this stress makes and to be easier to realize larger sized encapsulation by big backflow because on such as this temperature extremes of big reflux temperature bigger envelope to attack size more responsive to internal stress.
Table 2
| The distortion * of package bottom, μ m | The VonMises stress maximum MPa that tube core connects | The Von Mises stress maximum MPa of window sealant | |||||||
| Temperature ℃ | -65 | 25 | 225 | -65 | 25 | ?225 | -65 | 25 | ?225 |
| Do not contain embedded frame | -45.4 | -26.4 | +60.0 | 179.3 | 104.3 | ?16.4 | 129.8 | 76.9 | ?5.8 |
| Contain embedded frame | -23.4 | -13.6 | +13.3 | 136.5 | 79.4 | ?4.8 | 133.2 | 77.4 | ?4.7 |
| Difference % | 48.5 | 48.5 | 77.8 | 23.9 | 23.9 | ?70.3 | -2.6 | -0.65 | ?19.0 |
*+/-number protruding/recessed distortion of expression.
Be respectively the typical variant pattern of the IC that contains embedded frame and do not contain embedded frame when being encapsulated in 225 ℃ shown in Fig. 6 and 7.Use the distortion of embedded frame obviously to diminish.
Described embedded frame can adopt multiple shape.But in order to reduce cost, window frame 32 can adopt the simple designs such as side's ring or pocket form among Fig. 2.The applicant has confirmed that best effect is the edge overlaid with described embedded frame and tube core, as illustrated in Figures 5 and 6.
As a kind of embodiment, described embedded frame 300 can comprise and is used for cross bar 302 additional support, that connect frame 304 as shown in Figure 8.In pocket-size window frame 32, the embedded frame in the molding composite is tightly fixed at the edge.Can also use more complicated frame shape (as the form of honeycomb), but the surcharge of employed framework should be enough low, could guarantee that like this expense of whole encapsulation is lower than full ceramic packaging.
In another embodiment, a kind of do not have the full windowpane of window frame to be attached on the described molding composite.Embedded frame reduces the stress in the big reflow treatment.For example, can use by alloy-42 (CTE～4.5ppm/C) or copper/tungsten alloy (embedded frame of CTE～6.5ppm/C) constitute, or ceramic frame (CTE～7.4ppm/C).Mould is handled
Fig. 9 A and 9B are depicted as a kind of a kind of embodiment that can embed the mould of framework in molding composite.Fig. 9 A is depicted as the viewgraph of cross-section of this mould, is illustrated in the situation of placing embedded frame 300 in the die cavity 340.Fig. 9 B is for overlooking the die cavity top view of described embedded frame 300 corresponding to Fig. 9 A dotted portion.
In this embodiment, block 342 is used for described embedded frame 300 is fixed in position.The runner and the cast gate 360 that are positioned at described die cavity 340 1 sides provide the source for described molding composite.Runner and cast gate are done to be provided with like this with respect to the position of described die cavity 340, so as molding composite when flowing to the end face pressurization of embedded frame, and embedded frame pressed downward in the described die cavity 340.When molding composite was provided in the described die cavity 340, the exhaust outlet 362 that is positioned at this mould offside allowed air is discharged.When in described die cavity 340, providing molding composite, also embedded lead frame 370.
In embodiments, can make a plurality of molded packages simultaneously.As everybody known, these molded packages are unified into a band end-to-end.In other treatment step, this molded packages is separated.Imaging system
Figure 10 shows the imaging system 400 that includes imageing sensor, and it has utilized the IC encapsulation that has embedded frame.Imageing sensor is attached on the circuit board by big reflow treatment method.Imageing sensor 410 is used as the part of video camera, silicon eye or other vision facilities.Typically, this imageing sensor is electrically coupled on image processor 420 and the memory 430.This imaging system also can comprise interconnection circuit 440, so as with communicate such as other systems such as mainframe computer system or other output equipments.Described imaging system also can comprise the lens combination (not shown), so as light focusing on imageing sensor, this is known in this area.
Thisly can reduce cost, and quicken manufacture process by the attached imageing sensor of big reflow method.This also comparable artificial welding method provides more reliable connection.
Therefore, disclosed is a kind of can the encapsulation by the IC that has embedded frame that big reflow treatment method is installed on the circuit board.Specific device described herein and method have just illustrated principle of the present invention.A large amount of improvement in form and details will can not break away from category of the present invention.For example because embedded framework, between back tube core and the molded packages and the internal stress between top cover and molded packages can reduce, so can not prolong the cycle of baking.Although that is showed the present invention relates to a kind of special embodiment, should not think that it is a kind of restriction.The present invention is only limited by the appended claims.
Appendix 1
Material behavior
(conventional parameter of EO1B)
| Parameter | Rated value |
| Heat conduction (room temperature) | ?????????????0.8W/M·K |
| Thermal expansion (α 1) | ?????150×10-7/℃，490×10-7/℃ |
| Bending strength | ?????????????0.14GPa |
| Bending resistance elasticity | ??????????????18GPa |
| Vitrification point (Tg) | ??????????????163℃ |
| Volume resistivity (room temperature) | ??????????2×10 15Ω·cm |
| Dielectric constant [1MHz] (room temperature) | ???????????????3.8 |
| α counts radiation (DPH) | 0.06 individual counting/cm2Hr |
Appendix 2
| Number: | KSD-248-0108-1 |
Claims (19)
1. an integrated circuit (IC) encapsulation comprises:
Molding composite has embedded a framework in this molding composite, the thermal coefficient of expansion of this framework (CTE) is less than the thermal coefficient of expansion of described molding composite;
Tube core is fixed on the described molding composite; And
Window is attached on the described molding composite, so that allow light to shine on the described tube core.
2. the IC of claim 1 encapsulation, wherein said framework contains pottery.
3. the IC of claim 1 encapsulation, wherein said framework contains a kind of alloy.
4. the IC of claim 3 encapsulation, wherein said framework contains alloy-42.
5. the IC of claim 1 encapsulation also comprises:
In abutting connection with the window frame of described window, the CTE of this window frame is less than the CTE of this molding composite.
6. the IC of claim 5 encapsulation, wherein said window frame is by constituting with described framework identical materials.
7. the IC of claim 1 encapsulation, wherein said framework around described tube core under.
8. make the method that IC encapsulates for one kind, this method comprises:
In mould, place framework; And
With molding composite described framework is surrounded basically.
9. the method for claim 8 wherein, realizes surrounding described framework basically with molding composite by surround a ceramic frame basically with molding composite.
10. the method for claim 8 wherein, realizes surrounding described framework basically with molding composite by surround an alloy framework basically with molding composite.
11. the method for claim 8 wherein, realizes surrounding described framework basically with molding composite by the framework that surrounds an alloy-42 with the plastic compound basically.
12. the method for claim 8 also comprises:
Tube core is fixed on the described molding composite; And
By being attached at, window encapsulates this tube core on the described molding composite.
13. the method for claim 12 wherein, is included as this tube core location with described die attach, so that its edge is positioned on the described framework on described molding composite.
14. a method of making the IC encapsulation, this method comprises:
Die attach is being contained on the molding composite of embedded frame; And
Window is attached at encapsulates this tube core on the described molding composite.
15. the method for claim 14 wherein, comprises this tube core of location with described die attach, so that its edge is positioned on the described framework on described molding composite.
16. the method for claim 14 wherein, is attached at described window on the described molding composite and also comprises:
Described window is attached on the alloy window frame; And
Described alloy window frame is attached on the described molding composite.
17. the method for claim 14 wherein, is attached at described window on the described molding composite and also comprises:
Described window is attached on the ceramic window frame; And
Described ceramic window frame is attached on the described molding composite.
18. one kind is fixed on method on the circuit board with IC encapsulation, this IC encapsulation comprises a molding composite that contains embedded frame, and the thermal coefficient of expansion of wherein said embedded frame (CTE) is less than the thermal coefficient of expansion of described molding composite, and this method comprises:
Be close to described circuit board and place described IC encapsulation; And
With big circumfluence method described IC encapsulation is attached on the described circuit board.
19. the method for claim 18 wherein, is attached at described IC encapsulation and comprises on the described circuit board this IC encapsulation is heated above 215 ℃.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/219,186 US6072232A (en) | 1998-10-13 | 1998-12-21 | Windowed non-ceramic package having embedded frame |
| US09/219,186 | 1998-12-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1331841A true CN1331841A (en) | 2002-01-16 |
| CN1225786C CN1225786C (en) | 2005-11-02 |
Family
ID=22818234
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB998148369A Expired - Fee Related CN1225786C (en) | 1998-12-21 | 1999-11-23 | Windowed non-ceramic package having embedded frame |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JP2002533926A (en) |
| KR (1) | KR100490692B1 (en) |
| CN (1) | CN1225786C (en) |
| AU (1) | AU1744800A (en) |
| DE (1) | DE19983826T1 (en) |
| GB (1) | GB2359927B (en) |
| TW (1) | TWI249234B (en) |
| WO (1) | WO2000038230A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104154995A (en) * | 2014-08-21 | 2014-11-19 | 中国科学院光电研究院 | Hyperspectral detection integrated module and manufacture method thereof |
| CN111551775A (en) * | 2020-06-16 | 2020-08-18 | 新纳传感系统有限公司 | Method for manufacturing current sensor |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6825540B2 (en) * | 2001-12-05 | 2004-11-30 | Matsushita Electric Industrial Co., Ltd. | Miniaturized, resin-sealed solid state imaging apparatus |
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| US4285002A (en) * | 1978-01-19 | 1981-08-18 | International Computers Limited | Integrated circuit package |
| JPS60115247A (en) * | 1983-11-28 | 1985-06-21 | Fujitsu Ltd | Semiconductor device |
| JPH0724287B2 (en) * | 1987-02-12 | 1995-03-15 | 三菱電機株式会社 | Semiconductor device having light transmitting window and method of manufacturing the same |
| DE69131784T2 (en) * | 1990-07-21 | 2000-05-18 | Mitsui Chemicals Inc | Semiconductor device with a package |
| US5324888A (en) * | 1992-10-13 | 1994-06-28 | Olin Corporation | Metal electronic package with reduced seal width |
| JP2784126B2 (en) * | 1993-02-23 | 1998-08-06 | 京セラ株式会社 | Manufacturing method of semiconductor device storage package |
| US6326678B1 (en) * | 1993-09-03 | 2001-12-04 | Asat, Limited | Molded plastic package with heat sink and enhanced electrical performance |
| US5498900A (en) * | 1993-12-22 | 1996-03-12 | Honeywell Inc. | Semiconductor package with weldable ceramic lid |
| US5471011A (en) * | 1994-05-26 | 1995-11-28 | Ak Technology, Inc. | Homogeneous thermoplastic semi-conductor chip carrier package |
| US5471001A (en) * | 1994-12-15 | 1995-11-28 | E. I. Du Pont De Nemours And Company | Crystallization of adipic acid |
| JP3471111B2 (en) * | 1995-03-20 | 2003-11-25 | 三菱電機株式会社 | Semiconductor device |
| JPH0992748A (en) * | 1995-09-21 | 1997-04-04 | Mitsubishi Materials Corp | Package for semiconductor element |
| JP3292798B2 (en) * | 1995-10-04 | 2002-06-17 | 三菱電機株式会社 | Semiconductor device |
| JPH09107054A (en) * | 1995-10-13 | 1997-04-22 | Sony Corp | Semiconductor device |
| US5821617A (en) * | 1996-07-29 | 1998-10-13 | Microsemi Corporation | Surface mount package with low coefficient of thermal expansion |
| JPH10189792A (en) * | 1996-12-27 | 1998-07-21 | Sony Corp | Semiconductor package |
| JP2002020358A (en) * | 2000-07-07 | 2002-01-23 | Kansai Tlo Kk | New water-soluble chiral shift reagent comprising complex of rare earth metal with amino acid derivative ligand and optically resolving agent comprising the complex |
| JP2002174956A (en) * | 2000-12-06 | 2002-06-21 | Ricoh Co Ltd | Image forming device |
| JP2003042150A (en) * | 2001-07-31 | 2003-02-13 | Koyo Seiko Co Ltd | Rolling bearing unit |
-
1999
- 1999-11-23 JP JP2000590209A patent/JP2002533926A/en active Pending
- 1999-11-23 WO PCT/US1999/028012 patent/WO2000038230A1/en active IP Right Grant
- 1999-11-23 DE DE19983826T patent/DE19983826T1/en not_active Withdrawn
- 1999-11-23 AU AU17448/00A patent/AU1744800A/en not_active Abandoned
- 1999-11-23 GB GB0113365A patent/GB2359927B/en not_active Expired - Fee Related
- 1999-11-23 CN CNB998148369A patent/CN1225786C/en not_active Expired - Fee Related
- 1999-11-23 KR KR10-2001-7007833A patent/KR100490692B1/en not_active IP Right Cessation
- 1999-12-20 TW TW088122398A patent/TWI249234B/en not_active IP Right Cessation
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104154995A (en) * | 2014-08-21 | 2014-11-19 | 中国科学院光电研究院 | Hyperspectral detection integrated module and manufacture method thereof |
| CN104154995B (en) * | 2014-08-21 | 2016-09-28 | 中国科学院光电研究院 | A kind of EO-1 hyperion detection integration module and manufacture method thereof |
| CN111551775A (en) * | 2020-06-16 | 2020-08-18 | 新纳传感系统有限公司 | Method for manufacturing current sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1225786C (en) | 2005-11-02 |
| JP2002533926A (en) | 2002-10-08 |
| AU1744800A (en) | 2000-07-12 |
| TWI249234B (en) | 2006-02-11 |
| DE19983826T1 (en) | 2002-03-07 |
| GB2359927B (en) | 2003-11-26 |
| GB0113365D0 (en) | 2001-07-25 |
| KR100490692B1 (en) | 2005-05-24 |
| WO2000038230A1 (en) | 2000-06-29 |
| GB2359927A (en) | 2001-09-05 |
| KR20020018993A (en) | 2002-03-09 |
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