JPH0992748A - Package for semiconductor element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a package in which a semiconductor element can be set, while being secured firmly, in a cavity without applying undue force, the number of machining steps of the cover is decreased, and stress due to repeated heating/ cooling the semiconductor element is relaxed at each joint of the ceramic board, the cover, and the semiconductor element. SOLUTION: A semiconductor element 14 is secured through a first solder 11 onto the upper surface of a ceramic board 16 and a cover 17 having a cavity 18 for containing the semiconductor element 14 is bonded to the upper surface of a ceramic board 16 at the circumferential fringe thereof so that the semiconductor element 14 is contained in the cavity. The cover 17 comprises a cover body 19 covering the upper surface of the semiconductor element 14, and a frame member 26 independent from the cover body 19 with the upper surface being bonded through a buffer material 24 to the lower surface of the cover body 19 at the circumferential fringe thereof. The cover body 19, the frame member 26 and the ceramic board 16 have coefficients of thermal expansion α1 , α2 , α3 satisfying a relationship α1 <=α2 <=α3 .

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a package for housing a semiconductor device.

[0002]

2. Description of the Related Art Conventionally, as a semiconductor element package of this type, a ceramic substrate and a lid have a space for accommodating semiconductor elements therein, and the ceramic substrate is formed of a glass ceramic sintered body. There is disclosed a package for accommodating a semiconductor element in which a lid is made of an aluminum nitride sintered body (JP-A-6-244295). In this package, the ceramic substrate contains 50.0 to 90.0% by volume of at least one crystal of cordierite and mullite, and 10.0 to 50.0% by volume of at least alumina, spinel, anorthite and forsterite. 1
And crystals of seeds are included. The lid is formed into a bowl shape by forming a compact by press-molding a raw material powder containing AlN powder as a main component, and then firing the compact at a temperature of about 1800 ° C. Further, the lower surface of the side wall of the lid is adhered to the upper peripheral edge of the ceramic substrate through a sealing material such as glass or resin, and the upper surface of the semiconductor element is covered by the lid in order to efficiently dissipate the heat generated by the semiconductor element into the atmosphere. It is glued to the inner surface.

In the semiconductor element housing package thus constructed, the coefficient of thermal expansion of the ceramic substrate is close to the coefficient of thermal expansion of the lid and the coefficient of thermal expansion of silicon which is a constituent material of the semiconductor element. Thermal stress is not generated in the ceramic substrate, the lid, and the semiconductor element due to the heat generated by the semiconductor element, and the semiconductor element can be normally and stably operated for a long period of time.

[0004]

However, in the above-mentioned conventional package for accommodating semiconductor elements, there is variation in the height of the side wall of the as-sintered lid, and in this state, the ceramic substrate having the semiconductor element fixed on the upper surface is When the lid is bonded, there is a problem that an excessive compressive force acts on the semiconductor element or the upper surface of the semiconductor element cannot be bonded to the inner surface of the lid. If the lower surface of the side wall and the inner surface of the lid are machined in order to adjust the height of the side wall to the height of the semiconductor element in order to solve this point, the machining of the inner surface of the lid is troublesome and the number of processing steps is significantly increased. There is a problem. Further, in the conventional package for accommodating semiconductor elements, although the coefficient of thermal expansion of the ceramic substrate is close to the coefficient of thermal expansion of the lid and the semiconductor element, they do not completely match, so the ceramic substrate and the lid are not matched. In addition, there is a problem that a relatively large stress is applied to each bonded portion between the semiconductor elements due to repeated heat generation and cooling of the semiconductor element.

An object of the present invention is to allow the semiconductor element to be securely fixed to the ceramic substrate and the lid main body without being forcedly applied to the semiconductor element, and to accommodate the semiconductor element in the empty space, thereby reducing the man-hour for machining the lid. Another object of the present invention is to provide a semiconductor device package that can alleviate the stress generated in the ceramic substrate, the lid, and the bonding portions between the semiconductor devices due to repeated heat generation and cooling of the semiconductor device. Another object of the present invention is to provide a semiconductor device package that can be made lighter and can reduce the temperature rise of the semiconductor device.

[0006]

The invention according to claim 1 is
As shown in FIG. 1, the semiconductor element 14 has the first solder 1 on the upper surface.
1, a ceramic substrate 16 fixed via 1 and a lid 17 having a cavity 18 capable of accommodating the semiconductor element 14,
This is an improvement of the semiconductor device package configured to accommodate the semiconductor device 14 by adhering the lid 17 to the peripheral edge of the upper surface of the ceramic substrate 16. The characteristic configuration is that the lid 17 covers the upper surface of the semiconductor element 14 and the lid main body 19
And a frame member 26, which is formed as a separate member from the lid main body 19 and whose upper surface is adhered to the lower peripheral edge of the lid main body 19 via the cushioning material 24 and covers the side surface of the semiconductor element 14,
When the thermal expansion coefficients of the frame member 26 and the ceramic substrate 16 are α ₁ , α ₂ and α ₃ , respectively, the relationship of α ₁ ≦ α ₂ ≦ α ₃ is satisfied. The invention according to claim 4 is the invention according to any one of claims 1 to 3, further comprising a first metallization layer 21 formed on a peripheral edge of an upper surface of the ceramic substrate 16 and a second metallization layer 22 on a lower surface of the frame member 26. Is formed, and the frame member 26 is adhered to the peripheral edge of the upper surface of the ceramic substrate 16 via the second metallization layer 22, the third solder 13, and the first metallization layer 21. . The invention according to claim 5 is the invention according to claim 1.
1 to 4, the semiconductor element 1 is further provided on the upper surface of the ceramic substrate 16 via the first solder 11.
4 is fixed and a third metallization layer 23 is formed on the lower surface of the lid body 19 facing the semiconductor element 14.
The upper surface of 4 is on the lower surface of the lid body 19 and the third solder 13 and the third solder 13
The semiconductor element package is characterized in that it is adhered via a metallized layer 23.

In the semiconductor element package thus constructed, the frame member 26 forming the side wall of the lid 17 is a separate member from the lid body 19, so that the semiconductor element 14 is not forced. The ceramic substrate 16 and the lid body 1
It can be accommodated in the empty space 18 in a state of being securely fixed to the space 9. Further, since the lid main body 19 and the frame member 26 have a relatively simple shape, the frame member 26 is formed in order to match the height with the semiconductor element 14.
Even if it is machined, it requires only a few steps. Further, the lid body 19, the frame member 26, and the ceramic substrate 16 satisfy the relationship of α ₁ ≦ α ₂ ≦ α ₃ among these thermal expansion coefficients, whereby the ceramic substrate 16 due to repeated heat generation and cooling of the semiconductor element 14, It is possible to relieve the stress generated in each bonding portion between the lid 17 and the semiconductor element 14, that is, in the first to third solders 11 to 13, and the first to third solders 11 can be formed due to the slight difference in the thermal expansion coefficient. The stresses generated in the parts 13 to 13 can also be reduced by expanding and contracting the cushioning material 24 having a small longitudinal elastic coefficient.

The invention according to claim 6 relates to claims 1 to 5.
The invention according to any one of the aspects, further comprising a heat sink 45 made of Al or Ag laminated and adhered on the upper surface of the lid body 19 as shown in FIG. In the package configured as described above, the heat generated by the semiconductor element 14 is smoothly dissipated from the heat sink 45 via the third solder 13 and the lid body 19, so that the temperature rise of the semiconductor element 14 can be reduced. .

[0009]

BEST MODE FOR CARRYING OUT THE INVENTION The lid body is formed of ceramics in a plate shape, and the frame member is formed of ceramics in a polygonal shape such as a rectangle or a circular frame shape. The ceramic substrate is a ceramic multilayer wiring substrate in which ceramic layers and circuit layers are alternately laminated and is formed in a plate shape. Further, a large number of I / O pins that are electrically connected to the circuit layer are provided on the lower surface of the ceramic substrate. The lid body is made of SiC, AlN, low temperature sintering material or Al ₂ O ₃ , and the frame material is SiC, Al
It is preferable that the ceramic substrate is made of N, a low temperature sintered material or Al ₂ O ₃ , and the ceramic substrate is made of AlN, a low temperature sintered material or Al ₂ O ₃ . The low-temperature sintered materials glass - can be a ceramic-based sintered material and BaSn (BO _{3) 2} sintered materials. SiC, AlN,
The coefficient of thermal expansion of the low temperature sintered material and Al ₂ O ₃ is the smallest in SiC, and increases in the order of AlN, low temperature sintered material, and Al ₂ O ₃ . Therefore, the materials for forming the lid main body, the frame member and the ceramic substrate are such that the thermal expansion coefficients α ₁ , α ₂ and α ₃ of the lid main body, the frame member and the ceramic substrate are α ₁ ≦ α ₂ ≦ α _{3 respectively} . Selected to meet. Buffer material is Al or Ag
Is formed by. When the cushioning material is made of Al, it is preferable that the thickness is in the range of 0.1 to 0.5 mm. This is because when the thickness of the cushioning material is less than 0.1 mm, the Si component in the brazing filler metal penetrates into the Al of the cushioning material to increase the amount of Al and the Al becomes hard, and when it exceeds 0.5 mm, the ceramics cracks. Because there is. When the cushioning material is made of Ag, the thickness should be 5 to 20.
It is preferable to set it in the range of μm. This is because if the thickness of the cushioning material is less than 5 μm, there is a risk of defective bonding.
This is because if the thickness exceeds μm, there is a problem that the ceramic will crack.

(A) Formation of the first metallized layer on the peripheral edge of the upper surface of the ceramic substrate When the ceramic substrate is made of a low-temperature sintering material: The ceramic substrate is formed by printing a conductor paste on a green sheet, stacking the paste, and then firing the paste. It is produced and becomes a multilayer wiring board. When the ceramic substrate is made of low temperature sintering material, Ag is used as the conductor paste and the temperature is 120 ° C.
After 10 minutes of drying and stacking, degreasing is performed at 375 ° C. for 40 minutes, and then firing is performed at 875 ° C. for 20 to 30 minutes to obtain a ceramic substrate. At this time, the first metallization layer is also A
g at the same time. When the ceramic substrate is made of AlN, Al ₂ O ₃ or SiC When the ceramic substrate is made of AlN, Al ₂ O ₃ or SiC, W paste is used to form a multilayer wiring substrate. The first metallization layer is also formed of W at the same time,
Ni plating is applied to the surface for soldering.

(B) Formation of the second metallized layer on the lower surface of the frame material When the second metallized layer is Al When the frame material is alone or when the frame material and the lid main body are bonded, Al-Si is formed on the lower surface of the frame material. The thickness is 0.1 to 0.
Place an Al plate of 5 mm and load 0.5-2 kg /
By adding cm ² and heating in vacuum at 600 to 630 ° C. for 5 to 30 minutes, the Al plate is bonded to the lower surface of the frame material, and this Al plate becomes the second metallized layer. The lower surface of the second metallization layer bonded to the frame material is preferably plated with Ni. When the second metallization layer is Ag When the frame material is used alone or when the frame material and the lid body are adhered, the Ag paste is applied to the lower surface of the frame material to 100 to 150 ° C.
~ 30 minutes heating to dry, 800 ~ 900 in air
By heating at 5 ° C. for 5 to 30 minutes, the Ag paste becomes a second metallized layer having a thickness of 5 to 20 μm. Ag
When the frame material to which the paste is applied is formed of AlN, in order to suppress the reaction of the glass component in the Ag paste, the surface on which the Ag paste is applied is subjected to an oxidation treatment before applying the Ag paste and further SiO ₂ Are preferably coated.

(C) Formation of the third metallized layer on the lower surface of the lid body When the third metallized layer is Al, the lid body is in a single state or at a predetermined position on the lower surface of the lid body when the lid body and the frame material are bonded. An Al-Si brazing material is sandwiched between Al plates having a thickness of 0.1 to 0.5 mm, and a load of 0.
5 ~ 2kg / cm ² added, 600 ~ 630 ℃ in vacuum
By heating for 5 to 30 minutes, the Al plate is bonded to a predetermined position on the lower surface of the lid body, and this Al plate becomes the third metallized layer. The lower surface of the second metallization layer bonded to the lid body is preferably plated with Ni. When the third metallized layer is Ag: The Ag paste is applied to a predetermined position on the lower surface of the lid body when the lid body is a single body or when the lid body and the frame material are adhered.
By heating to ~ 150 ° C for 5 to 30 minutes to dry, and heating in air to 800 to 900 ° C for 5 to 30 minutes,
The Ag paste serves as a third metallized layer having a thickness of 5 to 20 μm. If the lid body to which the Ag paste is applied is made of AlN, in order to suppress the reaction of the glass component in the Ag paste, A before applying the Ag paste
It is preferable that the surface on which the g paste is applied is oxidized and further coated with SiO ₂ .

(D) Forming a lid by adhering a frame material to the lid body When the cushioning material is Al A frame material, an Al-Si type brazing material, a cushioning material, an Al-Si type brazing material and a lid body are stacked in this order. , 0.5 to 2kg load on these
/ Cm ² was added, 5-30 to six hundred to six hundred and thirty ° C. in vacuo
By heating for a minute, the frame material is bonded to the lid body to form the lid. When the cushioning material is Ag: The Ag paste is applied to a position facing the frame material on the lower surface of the lid body, heated to 100 to 150 ° C. for 5 to 30 minutes and dried, and the Ag paste is applied to the upper surface of the frame material. 5-30
Heat to 5 ° C for 5-30 minutes to dry. The lid body and the frame material are overlapped and heated in the atmosphere at 800 to 900 ° C. for 5 to 30 minutes to bond the frame material to the lid body to form the lid. The Ag paste serves as a buffer material having a thickness of 5 to 20 μm. The lid body or frame material to which Ag paste is applied is Al
In the case of being formed by N, in order to suppress the reaction of the glass component in the Ag paste, the surface on which the Ag paste is applied is subjected to an oxidation treatment before applying the Ag paste and further SiO ₂
Are preferably coated.

(E) Fixing of Semiconductor Element to Ceramic Substrate Before adhering the lid to the ceramic substrate, the semiconductor element is fixed to the circuit layer on the upper surface of the ceramic substrate via the solder bump which is the first solder. Specifically, the first solder that is raised on the electrode on the lower surface of the semiconductor element is temporarily fixed to the terminal of the circuit layer on the upper surface of the ceramic substrate by the adhesive force of flux, and in this state, it is heated to 330 to 360 ° C. for 5 to 10 seconds. The semiconductor element is fixed to the ceramic substrate by melting the first solder.

(F) Adhesion of Lid to Ceramic Substrate and Semiconductor Element The second solder is placed on the first metallization layer on the upper surface of the ceramic substrate on which the semiconductor element is fixed, and the third solder is placed on the upper surface of the semiconductor element.
With the solder placed, the lid is placed on the ceramic substrate so that the second metallized layer on the lower surface of the frame member faces the second solder and the third metallized layer on the lower surface of the lid body faces the third solder. In a reflow oven at 220-250 ° C for 5
The lid is bonded to the ceramic substrate and the semiconductor element by heating for 10 seconds.

(G) Heat sink When the heat sink is made of Al In the state where the lid body is a single body, the heat sink is placed on the upper surface of the lid body with the Al-Si brazing material sandwiched therebetween, and a load of 0.
5 ~ 2kg / cm ² added, 600 ~ 630 ℃ in vacuum
The heat sink is adhered to the lid body by heating for 5 to 30 minutes. The heat sink includes a plate-shaped heat sink, a heat sink having corrugated honeycomb fins formed in a honeycomb shape by press-molding an Al plate, and a corrugated louver fin having a large number of windows formed by press-molding an Al plate. Examples thereof include a heat sink and a heat sink having a large number of plate-shaped or pin-shaped fins formed by an aluminum die casting method or the like. When the heat sink is Ag 100 to 150 by applying Ag paste on the top surface of the lid body
800 ~ in the air by heating to ℃ 5-30 minutes to dry
By heating to 900 ° C. for 5 to 30 minutes, the above Ag
The paste becomes a heat sink having a thickness of 5 to 20 μm. A
When the lid body to which the g paste is applied is made of AlN, the surface to which the ag paste is applied is oxidized before applying the ag paste in order to suppress the reaction of the glass components in the ag paste. ₂ is preferably coated.

As the Al-Si type brazing material, Al-
7.5% Si foil (weight%, the same below), Al-13% S
i foil, Al-9.5% Si-1.0% Mg foil, Al-
A brazing material such as 7.5% Si-10% Ge foil is exemplified.
As the first solder, 95% Pb-5% Sn
Examples of solder include foil and 90% Pb-10% Sn foil.
As the second and third solders, Sn-3.5% Ag foil,
Pb-50% In foil, 37% Pb-63% Sn foil, 40
% Pb-60% Sn foil, 36% Pb-62% Sn-2%
An example of the solder is Ag foil.

[0018]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, embodiments of the present invention will be described in detail with reference to the drawings. <Examples 1 to 9> As shown in FIG. 1, a semiconductor element package 10 includes a ceramic substrate 16 having a semiconductor element 14 fixed to the upper surface thereof via first solder 11, and a semiconductor element 1
And a lid 17 having an empty space 18 capable of accommodating the
Reference numeral 7 denotes a lid main body 19 which covers the upper surface of the semiconductor element 14, and a member separate from the lid main body 19, and the upper surface is adhered to the lower peripheral edge of the lid main body 19 via a cushioning material 24.
And a frame member 26 that covers the side surface of the. As shown in Table 1, AlN and SiC are used as the lid body 19, Al is used as the buffer material 18, AlN, Al ₂ O ₃ , low temperature sintering material and SiC are used as the frame material 26, and Al is used as the ceramic substrate 16. ₂
When O ₃ , the low temperature sintering material, and AlN are used, and the thermal expansion coefficients of the lid body 19, the frame member 26, and the ceramic substrate 16 are α ₁ , α _2, and α ₃ , respectively, α ₁ ≦ α ₂ ≦ α ₃ So as to satisfy the above relationship, the lid body 19, the frame member 26, and the ceramic substrate 1
6 was combined.

As the low-temperature sintered material, "Low-temperature sintered material 951" manufactured by DuPont was used. SiC,
AlN, low temperature sintering material and Al ₂ O ₃ is the thermal expansion coefficient of each 4.2 × 10 ^-6 /℃,4.6×10 ^-6 /℃,5.8
It was ^{x10 -6} / ° C and 6.7 x 10 ^-6 / ° C. The lid body 19 is a plate having a length and width of 40 mm and a height of 0.38 mm, and the cushioning member 24 has a thickness of 0.2 mm and has a rectangular void 18 having a length and width of 18 mm.
The frame member 26 has a height of 0.38 mm and the cushioning member 2
4 had a void of the same shape. Also, the ceramic substrate 16
Is 40 mm in length and width and 1.5 mm in height,
The semiconductor element 14 has a length and width of 10 mm and a height of 0.
It was 5 mm. These semiconductor device packages 10
Was manufactured as follows.

First, the ceramic substrate 16, the frame member 26, and the lid main body 19 are in a single state, and the first metallization layer 21 is provided on the upper surface of the ceramic substrate 16, the second metallization layer 22 is provided on the lower surface of the frame member 26, and the lid is further provided. Third metallized layers 23 were formed in the center of the lower surface of the main body 19. The first metallization layer 21 was formed so as to be located on the peripheral edge of the upper surface of the ceramic substrate 16 at the same time when the ceramic substrate 16 was manufactured. For the second metallization layer 22, an Al plate having a thickness of 0.2 mm is placed on the lower surface of the frame member 26 with an Al-7.5% Si foil brazing material 27 interposed therebetween, and a load of 2 kg / cm ² is applied to these, and the vacuum is applied in a vacuum. It was formed by heating to 630 ° C. for 10 minutes. For the third metallized layer 23, an Al-7.5% Si foil brazing material 27 is sandwiched between Al plates having a thickness of 0.2 mm and a load of 2 kg / cm ² is applied to the third metallized layer 23 at 630 in vacuum. 1 to ℃
It was formed by heating for 0 minutes. Lid 17 and frame material 26
And the second and third metallization layers 22, 2 are joined.
The surface of 3 was plated with Ni (not shown).

Next, the frame material 26, the Al-7.5% Si foil brazing material 27, the cushioning material 24, and the Al-7.5% Si foil brazing material 27.
And the lid body 19 are stacked in order from the bottom, and a load of 2 kg is applied to them.
/ Cm ² was added and heated at 630 ° C. for 10 minutes in vacuum to bond the frame member 26 to the lid body 19 to form the lid 17. The circuit layer 16a on the upper surface of the ceramic substrate 16
The semiconductor element 14 is fixed to the semiconductor chip via the solder bump which is the first solder 11. Specifically, the first solder 11 raised on the electrode (not shown) on the lower surface of the semiconductor element 14 is temporarily fixed to the terminal of the circuit layer 16a on the upper surface of the ceramic substrate 16 by the adhesive force of flux, and in this state, the temperature is raised to 350 ° C. The semiconductor element 14 was fixed to the ceramic substrate 16 by heating for 10 seconds to melt the first solder 11.

Further, with the second solder 12 placed on the first metallization layer 21 on the upper surface of the ceramic substrate 16 and the third solder 13 placed on the upper surface of the semiconductor element 14, the second metallization layer 22 on the lower surface of the frame member 26 is The third metallization layer 23 on the lower surface of the lid body 19 faces the second solder 12 and the third solder 13
Cover the ceramic substrate 16 so as to face the
In this state, the lid 17 is heated at 250 ° C. for 5 seconds in the reflow furnace to cover the lid 17 with the ceramic substrate 16 and the semiconductor element 1.
4 was adhered to make a package 10. 1st solder 1
95% Pb-5% Sn foil was used as No. 1, and Sn-3.5% Ag foil was used as each of the second and third solders 12 and 13. Reference numeral 29 is an I / O pin provided on the lower surface of the ceramic substrate 16.

<Examples 10 to 19> As shown in FIG. 2 and Table 1, the lid body 19 is made of AlN, SiC, Al ₂ O _3.
As the buffer material 24 and Al as the frame material 26
N, Al ₂ O ₃ , low-temperature sintering material and SiC are used as the ceramic substrate 16, and Al ₂ O ₃ , low-temperature sintering material and AlN are used as the ceramic substrate 16, respectively, and the lid body 19, the frame member 26 and the ceramic substrate 1 are used.
When the thermal expansion coefficients of 6 are α ₁ , α ₂ and α ₃ , respectively, α ₁
The lid main body 19 and the frame member 26 are made to satisfy the relationship of ≦ α ₂ ≦ α _3.
And the ceramic substrate 16 are combined, and the heat sink 45 is laminated and adhered on the upper surface of the lid body 19 to manufacture the semiconductor element package 40. Lid body 19 of heat sink 45
As a method of laminating and adhering the same to the upper surface of the lid main body 19 with the lid main body 19 as a single body, Al-7.5% Si foil brazing material 2
A with a thickness of 0.2 mm that becomes the heat sink 45 by sandwiching 7
1 plates were overlapped, a load of 2 kg / cm ² was applied to these, and heating was performed at 630 ° C. for 10 minutes in vacuum. Except for the above, the configuration was substantially the same as in Examples 1-9.

<Examples 20 to 24> As shown in FIG. 3 and Table 1, AlN is used as the lid main body 59, Ag is used as the buffer material 64, AlN, Al ₂ O ₃ is used as the frame material 66, and low temperature firing is performed. The binder material is Al ₂ O ₃ for the ceramic substrate 16 and the low temperature sintering material is used, and the thermal expansion coefficients of the lid main body 59, the frame member 66 and the ceramic substrate 16 are α ₁ , α ₂ and α ₃ , respectively. At this time, the lid body 59, the frame member 66, and the ceramic substrate 16 were combined so as to satisfy the relationship of α ₁ ≦ α ₂ ≦ α ₃ to manufacture the semiconductor element package 50. The dimensions of the lid body 59, the ceramic substrate 16 and the semiconductor element 14 are the same as those in the first embodiment.
~ 9 respectively. The frame material 66 has a height of 0.635 mm and has a length and width of 18 m inside.
It had a rectangular void 58 of m. These semiconductor device packages 50 were manufactured as follows.

First, the ceramic substrate 16, the frame member 66, and the lid main body 59 are in the state of a single body, the first metallization layer 61 is provided on the periphery of the upper surface of the ceramic substrate 16, the second metallization layer 62 is provided on the lower surface of the frame member 66, and the lid is further provided. Third metallized layers 63 were formed in the center of the lower surface of the main body 59. The first metallized layer 61 was formed so as to be located on the peripheral edge of the upper surface of the ceramic substrate 16 at the same time when the ceramic substrate 16 was manufactured. The second metallized layer 62 is formed by applying Ag paste on the lower surface of the frame material 66, heating it at 150 ° C. for 10 minutes and drying it, and then 85
It was formed by heating to 0 ° C. for 10 minutes. The third metallized layer 63 was formed by applying Ag paste to the center of the lower surface of the lid body 59, heating it to 150 ° C. for 10 minutes to dry it, and then heating it to 850 ° C. for 10 minutes in the atmosphere. The second and third metallized layers had the same thickness of 10 μm. When the ceramic substrate 16, the frame member 66, or the lid main body 59 to which the Ag paste is applied is formed of AlN, the surface on which the Ag paste is applied is subjected to an oxidation treatment and further coated with SiO ₂ before applying the Ag paste. (Not shown).

Next, the Ag paste is applied to the position on the lower surface of the lid main body 59 facing the frame material 66, heated at 150 ° C. for 10 minutes and dried, and the Ag paste is applied to the upper surface of the frame material 66 and applied 150 The lid body 59 and the frame material 66 are overlapped with each other by heating at 850 ° C. for 10 minutes, and the frame material 66 is adhered to the lid body 59 to form the lid 57 by heating at 850 ° C. for 10 minutes in the atmosphere. . The Ag paste serves as the buffer material 64 having a thickness of 20 μm. Lid body 5 to which Ag paste is applied
9 or when the frame material 66 is made of AlN, A
Before applying the g paste, the surface on which the Ag paste is applied was oxidized and then coated with SiO ₂ (not shown). Further, the semiconductor element 14 was fixed to the circuit layer 16a on the upper surface of the ceramic substrate 16 via solder bumps which were the first solders 11.

Further, with the second solder 12 placed on the first metallization layer 61 on the upper surface of the ceramic substrate 16 and the third solder 13 placed on the upper surface of the semiconductor element 14, the second metallization layer 62 on the lower surface of the frame member 66 is The third metallization layer 63 on the lower surface of the lid body 59 faces the second solder 12 and the third solder 13
Cover 57 on the ceramic substrate 16 so as to face
In this state, the lid 57 was adhered to the ceramic substrate 16 and the semiconductor element 14 by heating at 250 ° C. for 10 seconds in a reflow furnace to manufacture the package 50. Reference numeral 28 is an I / O pin projectingly provided on the lower surface of the ceramic substrate 16.

<Examples 25 to 29> As shown in FIG. 4 and Table 1, AlN is used as the lid main body 59, Ag is used as the cushioning material 64, and AlN, Al ₂ O ₃ is used as the frame material 66, and low temperature baking is performed. The binder material is Al ₂ O ₃ for the ceramic substrate 16 and the low temperature sintering material is used, and the thermal expansion coefficients of the lid main body 59, the frame member 66 and the ceramic substrate 16 are α ₁ , α ₂ and α ₃ , respectively. At this time, the lid main body 59, the frame member 66, and the ceramic substrate 16 are combined so as to satisfy the relationship of α ₁ ≦ α ₂ ≦ α ₃ , and the heat sink 85 is laminated and adhered to the upper surface of the lid main body 59 to form the semiconductor element package 80. It was made. As a method for laminating the heat sink 85 to the lid body 59, the lid body 5
The Ag paste was applied to the upper surface of No. 9, heated to 150 ° C. for 10 minutes to be dried, and then heated to 850 ° C. for 10 minutes in the atmosphere. The thickness of the heat sink 85 is 20μ
m. Before applying the Ag paste, the surface of the lid main body 59 to which the Ag paste is applied is subjected to an oxidation treatment, and further S
The iO ₂ was coated (not shown). Except for the above, the configuration was substantially the same as in Examples 20-24.

<Comparative Examples 1 and 4> As shown in FIG. 5 and Table 1, the lid 7a was integrally formed of AlN, and the ceramic substrate 6 was formed of a low temperature sintering material or Al ₂ O ₃ .
The first metallization layer 3a was formed so as to be located on the peripheral edge of the upper surface of the ceramic substrate 6 at the same time as the production of the ceramic substrate 6. The second metallization layer 3b is formed on the lower surface of the lid 7a facing the first metallization layer 3a, and the lower surface center of the lid 7a facing the upper surface of the semiconductor element 4 fixed to the ceramic substrate 6 via the first solder 2a. A third metallization layer 3c was formed on the substrate. The second and third metallized layers 3a to 3c were formed by heating the applied Ag paste at 150 ° C. for 10 minutes to dry it and then heating it at 850 ° C. for 10 minutes in the atmosphere. Also, of the lid 7a formed of AlN, Ag
Before the Ag paste was applied, the surface to which the paste was applied was oxidized and further coated with SiO ₂ (not shown). The first metallization layer 3a on the upper surface of the ceramic substrate 6
The second solder 2b is placed on the second metallization layer 3b and the third solder 2c is placed on the upper surface of the semiconductor element 4,
The lid 7a is covered on the ceramic substrate 6 so as to face the solder 2b and the third metallization layer 3c faces the third solder 2c, and in this state, the lid 7a is heated to 250 ° C. for 10 seconds to make the lid 7a ceramic. The package 1a was manufactured by adhering it to the substrate 6 and the semiconductor element 4. The lid 7a has a length and width of 40 mm and a height of 1.2 mm, the cavity 8 has a length and width of 18 mm and a depth of 0.8 mm, and the ceramic substrate 6 has a length and width of 40 mm and a height of 1.5 mm. And the semiconductor element 4 is 1 in each of the vertical and horizontal directions.
The height was 0 mm at 0 mm.

<Comparative Examples 2, 3, 5 and 6> FIG. 6 and Table 1
As shown in Fig. 7, cover 7b with Kovar or C.
The ceramic substrate 6 was integrally formed of a u / W alloy, the ceramic substrate 6 was formed of a low temperature sintering material or Al ₂ O ₃ , and the above materials were combined to produce four types of semiconductor element packages 1b. The first metallization layer 3a is formed so as to be located on the peripheral edge of the upper surface of the ceramic substrate 6 at the same time as the production of the ceramic substrate 6,
On the lower surface of the lid 7b facing the first metallization layer 3a, a second
A metallization layer (not shown) is formed, and a ceramic substrate 6 is formed.
A third metallization layer (not shown) was formed at the center of the lower surface of the lid 7b facing the upper surface of the semiconductor element 4 fixed via the first solder 2a. The second and third metallized layers are Ni plating applied at predetermined positions. With the second solder 2b placed on the first metallization layer 3a on the upper surface of the ceramic substrate 6 and the third solder 2c placed on the upper surface of the semiconductor element 4, the second metallization layer faces the second solder 2b and the third metallization is performed. The lid 7b is covered on the ceramic substrate 6 so that the layer faces the third solder 2c, and in this state, the lid 7b is heated to 250 ° C. for 10 seconds to remove the lid 7b.
b was adhered to the ceramic substrate 6 and the semiconductor element 4 to prepare a package 1b. The dimensions of the lid 7b, the void 8, the ceramic substrate 6 and the semiconductor element 4 were substantially the same as those of the comparative example 1.

<Comparative Test and Evaluation> The materials of the components of the semiconductor element packages of Examples 1 to 29 and Comparative Examples 1 to 6 and the lid body and the frame material of the semiconductor element packages of Examples 1 to 29 were evaluated. The adhesion temperature is shown in Table 1. Example 1
29, and the warpage of the lids of the semiconductor device packages of Comparative Examples 1 to 6 (average warpage at a length of 40 mm), −40 ° C.
The bonding strength between the lid and the ceramic substrate after 1000 cycles of the temperature of 125 ° C. was applied to the package, the thermal resistance when the semiconductor element was heated by 3 W, and the weight of the package (including the semiconductor element) were measured. The results are shown in Table 2. In the package strength after the temperature cycle in Table 2, A indicates that the joint strength is good, B indicates that the joint strength is normal, and C indicates that the joint strength is poor.

[0032]

[Table 1]

[0033]

[Table 2]

As is clear from Tables 1 and 2, it was found that the packages of Examples 1 to 29 were lighter in weight and less warped than the packages of Comparative Examples 1 to 6. The joint strength between the lid and the ceramic substrate was also good because there was little stress on the solder.

[0035]

As described above, according to the present invention, the lid main body covers the upper surface of the semiconductor element, is formed of a member separate from the lid main body, and the upper surface of the lid main body is provided with a cushioning material on the lower peripheral edge thereof. The bonded frame material covers the side surface of the semiconductor element, and the thermal expansion coefficients of the lid body, the frame material, and the ceramic substrate lid body are respectively α
₁ and α ₂ and α ₃ , the lid body, the frame member, and the ceramic substrate are configured to satisfy the relationship α ₁ ≤α ₂ ≤α ₃ , so that the lid for adjusting to the height of the semiconductor element is used. Compared with the conventional package for semiconductor element storage, which requires complicated machining, the machining of the inner surface is complicated and the frame material can be machined to match the height of the semiconductor element. . Further, since the frame material forming the side wall of the lid is a member separate from the lid main body, the semiconductor element can be housed in the empty space in a state of being securely fixed to the ceramic substrate and the lid main body without applying an unreasonable force to the semiconductor element.

Further, since the lid body, the frame material and the ceramic substrate satisfy the relationship of α ₁ ≦ α ₂ ≦ α ₃ among these thermal expansion coefficients, the ceramic substrate, the lid and the ceramic substrate are repeatedly heated and cooled by the semiconductor element. The stress generated in each adhesive portion between semiconductor elements can be relieved, and the stress generated in each adhesive portion due to the slight difference in each thermal expansion coefficient is also reduced by expansion and contraction of the cushioning material having a small longitudinal elastic coefficient. be able to. Further, if Al having a relatively small specific gravity is used as the buffer material, the package of the present invention can be made lighter than the conventional package. On top of the lid body, Al
Alternatively, if a heat sink formed of Ag is laminated and adhered, the heat generated by the semiconductor element is smoothly dissipated from the heat sink via the third solder and the lid body, so that the temperature rise of the semiconductor element can be reduced.

[Brief description of drawings]

FIG. 1 is a cross-sectional view of essential parts of a semiconductor device package according to first to sixth embodiments of the present invention.

FIG. 2 is a cross-sectional view of essential parts of semiconductor device packages of Examples 7 to 13 of the present invention.

FIG. 3 is a cross-sectional view of essential parts of semiconductor device packages of Examples 14 to 16 of the present invention.

FIG. 4 is a cross-sectional view of essential parts of semiconductor device packages of Examples 17 to 19 of the present invention.

5 is a cross-sectional view of a main part of a semiconductor device package of Comparative Example 1. FIG.

FIG. 6 is a cross-sectional view of essential parts of semiconductor device packages of Comparative Examples 2 and 3.

[Explanation of symbols]

 10, 40, 50, 80 Package for semiconductor element 11 First solder 13 Third solder 14 Semiconductor element 16 Ceramic substrate 17, 57 Lid 18, 58 Cavity 19, 59 Lid body 21, 61 First metallized layer 22, 62 2 metallized layer 23,63 third metallized layer 24,64 buffer material 26,66 frame material 45,85 heat sink

 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Masafumi Hatsuka 1-297 Kitabukurocho, Omiya City, Saitama Prefecture Mitsubishi Materials Research Institute

Claims (6)

[Claims] 1. A semiconductor element (14) having a first solder (11) on the upper surface thereof.
A ceramic substrate (16) fixed via, and a lid (17,57) having a cavity (18,58) capable of accommodating the semiconductor element (14), the lid (17,57) In a semiconductor device package configured to accommodate the semiconductor device (14) by adhering to a peripheral edge of an upper surface of the ceramic substrate (16), the lids (17, 57) have an upper surface of the semiconductor device (14). And a lid body (19,59) for covering the lid body (19,59) and a top surface formed by a member separate from the lid body (19,59) via a cushioning material (24,64) around the lower edge of the lid body (19,59). A frame member (26, 6) which is adhered and covers the side surface of the semiconductor element (14).
6), and the coefficient of thermal expansion of the lid body (19, 59), the frame material (26, 66) and the ceramic substrate (16) are α ₁ and α ₂ and α ₃ , respectively, α ₁ A semiconductor device package characterized by satisfying a relationship of ≦ α ₂ ≦ α ₃ . 2. The lid body (19, 59) having a thermal expansion coefficient α ₁ is made of Si.
C, AlN, low-temperature sintering material or Al ₂ O ₃ , frame material (26, 66) having a thermal expansion coefficient α ₂ is formed of SiC, AlN, low-temperature sintering material or Al ₂ O ₃ , A ceramic substrate (16) having a coefficient α ₃ is formed of AlN, a low temperature sintered material or Al ₂ O _3, and the lid body (19, 59) is formed so as to satisfy the relationship of α ₁ ≦ α ₂ ≦ α _3.
The semiconductor device package according to claim 1, wherein the frame material (26, 66) and the ceramic substrate (16) are selected. 3. The semiconductor device package according to claim 1, wherein the buffer material (24, 64) is made of Al or Ag. 4. A first metallization layer (21,61) is formed on a peripheral edge of an upper surface of the ceramic substrate (16), and a second metallization layer (22,62) is formed on a lower surface of the frame member (26,66). The frame material (26, 66) and the second metallization layer (22, 62) and the third
The semiconductor device package according to any one of claims 1 to 3, which is bonded to a peripheral edge of an upper surface of the ceramic substrate (16) via a solder (13) and the first metallized layer (21, 61). 5. The first solder on the upper surface of the ceramic substrate (16).
The semiconductor element (14) is fixed via (11), and a third metallization layer (23, 63) is formed on the lower surface of the lid body (19, 59) facing the semiconductor element (14). 5. The semiconductor according to claim 1, wherein an upper surface of the (14) is bonded to a lower surface of the lid body (19, 59) via a third solder (13) and the third metallized layer (23, 63). Device package. 6. The package for a semiconductor device according to claim 1, wherein a heat sink (45, 85) formed of Al or Ag is laminated and adhered on the upper surface of the lid body (19, 59).