JP2784126B2 - Manufacturing method of semiconductor device storage package - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device housing package for housing a semiconductor device.

[0002]

2. Description of the Related Art Conventionally, a package for accommodating a semiconductor element for accommodating a semiconductor element, for example, a package for accommodating a solid-state image pickup device for converting light into electricity, is usually made of a resin such as epoxy, and is provided substantially at the center of the upper surface thereof. A rectangular insulating base having a concave portion for accommodating the solid-state imaging device, and a solid-state imaging device which extends from the periphery of the concave portion of the insulating base to the outside and connects the solid-state imaging device housed therein to an external electric circuit 42
Consists of a plurality of external lead terminals made of a metal material such as an alloy, and a lid made of a light-transmitting material such as glass and sapphire. A solid-state image sensor is bonded to the bottom of the concave portion of the insulating base via an adhesive. At the same time, each electrode of the solid-state imaging device is connected to an external lead terminal via a bonding wire, and thereafter, a lid is bonded to an upper bonding portion of the insulating base via a sealing material made of epoxy resin, and A solid-state imaging device as a product is obtained by hermetically sealing the imaging device inside.

Incidentally, the epoxy resin insulating base in the conventional package for housing semiconductor elements is prepared by placing an epoxy liquid resin at a pressure of about 50 to 100 kgf / cm ^{2 in} a mold in which external lead terminals are previously installed. It is manufactured by applying a temperature of about 150 to 200 [deg.] C. and thermally curing the material.

[0004]

However, in this conventional package for housing a semiconductor element, a concave portion for housing a semiconductor element such as a solid-state image pickup device is provided on the upper surface of the insulating base, and the periphery of the concave portion of the insulating base is provided. Since the external lead terminals made of 42 alloy or the like having a smaller coefficient of thermal expansion than the epoxy resin are arranged, the epoxy liquid resin is pressed into a mold in which the external lead terminals are installed and is thermally cured. When manufacturing an insulating substrate, heat shrinkage around the concave portion above the insulating substrate is suppressed by the external lead terminals and becomes smaller than below, and further, the amount of epoxy resin is smaller above the insulating substrate than below, and Greatly shrinks compared to the upper part, a large stress is generated between the upper part and the lower part of the insulating substrate due to the difference in the amount of heat shrinkage. The long side of had the disadvantage that warps about 100μm approximately downward.

Therefore, in this conventional package for housing a semiconductor element, the semiconductor element cannot be firmly bonded and fixed to the bottom of the concave portion of the insulating base, and the lid cannot be firmly joined to the insulating base. This has led to the disadvantage that the reliability of hermetic sealing of the container comprising the lid is low.

When the semiconductor element housed inside is a solid-state imaging device and the lid is made of a transparent member, the lid cannot be joined to the insulating base in parallel because the insulating base is warped.
As a result, when an image is formed on the solid-state imaging device from the outside through the lid and photoelectric conversion corresponding to the image formed on the solid-state imaging device is caused, distortion occurs in the image formation on the solid-state imaging device, There is also a disadvantage that accurate photoelectric conversion cannot be caused in the image sensor.

[0007]

SUMMARY OF THE INVENTION The present invention has been devised in view of the above-mentioned drawbacks, and has as its object to effectively prevent the occurrence of warpage in an insulating substrate, to bond and fix a semiconductor element to the insulating substrate, and to provide an insulating substrate. It is an object of the present invention to provide a method for manufacturing a package for housing a semiconductor element, which can make the bonding between the semiconductor device and the lid strong.

[0008]

According to the present invention, there is provided a concave portion for accommodating a semiconductor element on an upper surface, and a plurality of external lead terminals are attached with one end exposed around the concave portion and the other end exposed to the outside. A semiconductor device housing package comprising a rectangular resin insulating base and a lid, wherein the rectangular resin insulating base is manufactured in the following steps (1) and (2). A method for manufacturing a package for housing a semiconductor element.

(1) The coefficient of thermal expansion in the mold is smaller than the coefficient of thermal expansion of the resin serving as the insulating base, the cross-sectional area is 0.1 to 1.0 mm ² , and the length is the length of the long side of the insulating base. Of 50
% And a step of installing a plurality of external lead terminals.

(2) The liquid resin is press-fitted and hardened into the mold, and a bar-shaped member is buried along the long side under the recess, and external lead terminals are attached so as to be exposed to the outside from the periphery of the recess. Process.

[0011]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 shows an embodiment of a semiconductor device housing package for housing a solid-state image sensor manufactured by the manufacturing method of the present invention, wherein 1 is an insulating base, and 2 is a lid. The insulating base 1 and the lid 2 constitute a container 4 for housing the solid-state imaging device 3.

The insulating base 1 is made of an electrically insulating material such as epoxy, and has a concave portion 1a for accommodating the solid-state image pickup device 3 at a substantially central portion of the upper surface thereof. Are bonded and fixed via an adhesive.

A plurality of external lead terminals 7 extending from the periphery of the concave portion 1a to the outside are attached to the insulating base 1, and the external lead terminals 7 connect the solid-state imaging device 3 housed therein to an external electric circuit. Acts to connect electrically,
Each electrode of the solid-state imaging device 3 is connected to one end of the solid-state imaging device 3 via a bonding wire 6, and the other end led out is connected to an external electric circuit via a brazing material such as solder.

The external lead terminal 7 is made of Kovar metal (F
e-Ni-Co alloy) and 42 alloy (Fe-Ni alloy)
And the like.

The external lead terminal 7 is formed by applying a brazing material such as nickel or gold and a metal having good wettability to a thickness of 0.1 to 20.0 μm on the exposed surface by a conventionally known plating method. By doing so, the external lead terminals 7 can be securely and firmly connected to an external electric circuit. Accordingly, it is preferable that nickel, gold or the like is layered on the exposed surface of the external lead terminal 7 to a thickness of 0.1 to 20.0 μm.

On the upper surface of the insulating substrate 1 to which the external lead terminals 7 are attached, a light-transmitting lid 2 is joined via a sealing material, thereby comprising the insulating substrate 1 and the lid 2. The solid-state imaging device 3 is hermetically sealed inside the container 4.

The lid 2 is made of a translucent material such as sapphire, glass, quartz or the like, and irradiates an optical image reduced by an external lens member (not shown) onto the solid-state imaging device 3 housed in the container 4. It functions to form an image.

When the lid 2 is made of glass, for example, a glass component powder such as silica (SiO ₂ ), alumina (Al ₂ O ₃ ), calcia (CaO), barium oxide (BaO) is melted and cooled to form a flat plate. It is manufactured by molding.

Thus, according to the above-described package, the solid-state imaging device 3 is attached to the bottom surface of the concave portion 1a of the insulating base 1 via an adhesive, and each electrode of the solid-state imaging device 3 is connected to the external lead terminal 7 via the bonding wire 6. After that, the lid 2 is bonded to the upper surface of the insulating base 1 with a sealing material such as a resin, and the solid-state imaging device 3 is hermetically sealed inside the container 4 including the insulating base 1 and the lid 2. By stopping, a solid-state imaging device as a product is obtained.

Next, a method of manufacturing the insulating base 1 in the above-described semiconductor element housing package will be described with reference to FIGS.

First, a pair of upper and lower molds 8 and 9 for preparing the insulating base 1 shown in FIG. 2A are prepared. When the dies 8 and 9 are vertically stacked, a space having a shape corresponding to the insulating base 1 is formed inside.

Next, as shown in FIG. 2B, the rod-shaped member 5 is placed in an internal space formed when the molds 8 and 9 are overlapped.
Are arranged so as to be positioned along the long side under the concave portion 1a of the insulating base 1, and a plurality of external lead terminals 7 are disposed at positions where one end thereof is in the vicinity of the concave portion 1a.

The rod-shaped member 5 is made of a material such as 42 alloy having a thermal expansion coefficient smaller than that of the resin forming the insulating base 1. For example, an ingot (lumps) of 42 alloy or the like is rolled or stamped. It is formed in a predetermined rod shape by employing a conventionally known metal working method.

The plurality of external lead terminals 7 are 42
It is made of a metal material such as an alloy.
An ingot (a lump) such as an alloy is formed into a predetermined plate shape by applying a conventionally known metal working method.

The plurality of external lead terminals 7 correspond to FIG.
When one end of the external lead terminal 7 is commonly connected to the connecting member 10 as shown in FIG. 7, when a plurality of external lead terminals 7 are installed in the pair of dies 8, 9, the workability of the installation is improved. Therefore, it is preferable that one end of each of the plurality of external lead terminals 7 is commonly connected to the connecting member 10.

Further, if the rod-shaped member 5 is further connected to the connecting member 10 to which the plurality of external lead terminals 7 are commonly connected, the rod-shaped member 5 can be installed in the dies 8, 9 by the external lead terminals. 7 can be performed at the same time as the installation, and the workability of installation of the bar-shaped member 5 is further improved. Therefore, it is preferable that the rod-shaped member 5 is further connected to the connecting member 10 to which the external lead terminals 7 are commonly connected.

Further, the rod-shaped member 5 and the plurality of external lead terminals 7 are installed in the pair of dies 8 and 9 by placing the rod-shaped member 5 and the external lead terminals 7 on the die 8, and thereafter, This is performed by overlapping the mold 9 on the mold 8.

Next, as shown in FIG. 2 (c), the liquid resin is press-fitted into the internal spaces of the dies 8, 9 in which the rod members 5 and the external lead terminals 7 are installed, through the injection port 11. Is hardened, and after that, when it is taken out of the molds 8 and 9, a concave portion 1a for accommodating the semiconductor element is provided on the upper surface,
A plurality of external lead terminals 7 are attached with one end around the recess 1a and the other end exposed to the outside.
The rectangular resin-made insulating substrate 1 as a product in which the bar-shaped member 5 is buried along the long side of the lower side a.

As the resin to be pressed into the internal spaces of the dies 8, 9, a thermosetting resin such as epoxy or a thermoplastic resin such as polyphenylene sulfide is suitably used. If it is, a curing agent and a filler are added to and mixed with the epoxy resin powder raw material, and a temperature of about 150 to 200 ° C. is added thereto, and the mixture is heated and melted to temporarily form a liquid resin. Through the injection port 11 into the inner space of about 50-100 kgf / c
By press-fitting with a pressure of m ² and thermosetting in the internal spaces of the dies 8 and 9, the insulating substrate 1 is formed. When the material is made of a thermoplastic resin such as polyphenylene sulfide, about 40 to 12
A heat of 0 ° C. is applied to soften the liquid resin to form a liquid resin.
The insulating base 1 is obtained by press-fitting with a pressure of 2000 kgf / cm ² and solidifying in the internal spaces of the molds 8 and 9.

When the liquid resin is pressed into the interior spaces of the molds 8 and 9 and cured to form the insulating base 1, the lower part of the insulating base 1 is more likely to thermally contract than the upper part where the concave portion 1a is formed. However, the thermal contraction is suppressed by the rod-shaped member 5 having a thermal expansion coefficient smaller than the thermal expansion coefficient of the resin to be the insulating substrate 1, as a result, the thermal contraction of the entire insulating substrate 1 becomes substantially uniform, and the generation of stress is effectively performed. Thus, the insulating base can be made flat without warpage. Therefore, since the insulating base 1 is flat without warpage, the solid-state imaging device 3 can be firmly bonded and fixed to the bottom surface of the concave portion 1a, and the lid 2 can be firmly joined to the insulating base 1. Thus, the solid-state imaging device 3 housed therein can be operated normally and stably for a long period of time.

Further, since the insulating base 1 is flat without any warpage, the cover 2 can be joined to the insulating base 1 in parallel, and as a result, an image is formed on the solid-state image pickup device 3 through the cover 2 from outside. Can be accurately imaged, and the solid-state imaging device 3 can have extremely accurate photoelectric conversion.

The rod-shaped member 5 has a sectional area of 1.0.
If it exceeds mm ² , when the insulating substrate 1 is manufactured, the force of the bar-shaped member 5 for suppressing the thermal shrinkage of the resin below the insulating substrate 1 becomes too large, and the insulating substrate 1 is warped.
If the cross-sectional area is less than 0.1 mm ² , thermal contraction of the resin below the insulating substrate 1 by the rod-shaped member 5 cannot be sufficiently suppressed, and the insulating substrate 1 will be warped. Therefore, the bar-shaped member 5 has a sectional area of 0.1 to 1.0 m.
It is specified in the range of m ^2.

When the length of the rod-shaped member 5 is less than 50% of the length of the long side of the insulating substrate 1, when the insulating substrate 1 is manufactured, the resin under the insulating substrate 1 is thermally shrunk by the rod-shaped member 5. Does not reach the entire length of the insulating base 1 in the long side direction, and a part of the insulating base 1 is warped. Therefore, the length of the rod-shaped member 5 is specified to be 50% or more of the length of the long side of the insulating base 1.

Further, if the width and thickness of the rod-shaped member 5 are set to 0.1 mm or more, the mechanical strength of the rod-shaped member 5 is increased, and when the insulating base 1 is manufactured, the rod-shaped member 5 is attached to the insulating base 1. Even if the pressure accompanying the heat shrinkage of the resin is applied, no deformation occurs, and the heat shrinkage of the resin below the insulating base 1 can be effectively suppressed. Therefore, it is preferable that the width and thickness of the rod-shaped member 5 be 0.1 mm or more.

The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the gist of the present invention. For example, the above-described embodiment accommodates a solid-state image pickup device. Although a package has been described as an example, the present invention is also applicable to a package containing another semiconductor element.

In the above-described embodiment, a rod having a rectangular cross section is used as the rod member 5, but a cylindrical rod having a circular cross section may be used instead. In this case, the rod-shaped member 5
Is preferably 0.1 mm or more in diameter to increase the mechanical strength.

Further, the rod-shaped member 5 is provided in the concave portion 1 of the insulating base 1.
Although one is disposed immediately below a, a plurality may be disposed below the insulating base 1.

[0039]

According to the method for manufacturing a package for housing a semiconductor element of the present invention, the coefficient of thermal expansion in a mold for manufacturing an insulating base is smaller than the coefficient of thermal expansion of the resin used as the insulating base, and the cross-sectional area is not more than 0.1. Since a rod-like member having a length of 1 to 1.0 mm ² and a length of 50% or more of the length of the long side of the insulating base has been installed, a liquid resin is injected into the inner space of the mold and cured. When an insulating substrate is used, even if the lower portion of the insulating substrate attempts to thermally contract more than the upper portion where the concave portion is formed, the thermal contraction is suppressed by a rod-shaped member having a thermal expansion coefficient smaller than that of the resin used as the insulating substrate. As a result, the thermal contraction of the entire insulating substrate is substantially uniform, and the generation of stress is effectively prevented, so that the insulating substrate can be made flat without warpage. Therefore, since the insulating base is flat without warpage, the solid-state imaging device can be firmly adhered and fixed to the bottom of the concave portion, and the lid can be firmly joined to the insulating base. The solid-state imaging device to be housed can be operated normally and stably for a long period of time.

Further, since the insulating base is flat without warpage, the lid can be joined to the insulating base in parallel, and as a result, an image can be accurately formed on the solid-state imaging device through the lid from the outside. It is possible to cause the solid-state imaging device to perform extremely accurate photoelectric conversion.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing one embodiment of a semiconductor device housing package for housing a solid-state imaging device manufactured by a manufacturing method of the present invention.

2 (a) to 2 (c) are cross-sectional views for respective steps for explaining a method of manufacturing the insulating base of the package shown in FIG.

FIG. 3 is a plan view of an external lead terminal used in the manufacturing method shown in FIG. 2;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Insulating base 2 ... Lid 3 ... Semiconductor element 4 ... Container 5 ... Bar-shaped member 7 ... External lead terminal 8 ... Mold 9 ... Mold

Claims (1)

(57) [Claims] An upper surface having a recess for accommodating a semiconductor element;
And a plurality of external lead terminals have one end around the recess,
A semiconductor element housing package comprising a rectangular resin insulating base and a lid attached with the other end exposed to the outside, wherein the rectangular resin insulating base is as follows: A method for manufacturing a semiconductor element housing package, which is manufactured in the step (2). (1) The coefficient of thermal expansion in the mold is smaller than the coefficient of thermal expansion of the resin serving as the insulating base, the cross-sectional area is 0.1 to 1.0 mm ² , and the length is 50% of the length of the long side of the insulating base. The step of installing the bar-shaped member and the plurality of external lead terminals as described above. (2) A step of press-fitting and hardening the liquid resin into the mold, embedding a rod-shaped member along the longer side below the recess, and attaching an external lead terminal to be exposed to the outside from the periphery of the recess.