TWI249234B - Windowed non-ceramic package having embedded frame - Google Patents

Windowed non-ceramic package having embedded frame Download PDF

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Publication number
TWI249234B
TWI249234B TW088122398A TW88122398A TWI249234B TW I249234 B TWI249234 B TW I249234B TW 088122398 A TW088122398 A TW 088122398A TW 88122398 A TW88122398 A TW 88122398A TW I249234 B TWI249234 B TW I249234B
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Taiwan
Prior art keywords
lead frame
package
mold compound
mold
die
Prior art date
Application number
TW088122398A
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Chinese (zh)
Inventor
Zong-Fu Li
Kabul Sengupta
Deborah L Thompson
Original Assignee
Intel Corp
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Publication date
Priority claimed from US09/219,186 external-priority patent/US6072232A/en
Application filed by Intel Corp filed Critical Intel Corp
Application granted granted Critical
Publication of TWI249234B publication Critical patent/TWI249234B/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

An integrated circuit (IC) package includes a mold compound, a die, and a window. The mold compound has a frame embedded within it. The frame has a coefficient of thermal expansion that is less than the mold compound. The IC package is capable of being attached to a circuit board via a mass reflow process.

Description

1249234 A7 B7 五、發明說明（1 ) ilJLi請案 本案為美國專利申請案案號〇9/172,734的CIP(部份接續申 請案），該案之申請日期為1998年1〇月13日，案名為，，由質 量再回流安裝的影像感測器”。 1.發明領域 本發明之發明領域係有關於積體電路封裝。尤其是，本 發明有關於經質量再回流處理安裝一電路板上的積體電路 封裝。 2·相關技術說明 在多種不同的應用中使用開窗積體電路封裝，其中由位 在積體電路封裝内部的光或其他的輻射源。影像感測器為 開窗積體電路封裝的一種應用。 例如’可在光二極體陣列置於開窗積體電路封裝中。光 偵測器陣列基於入射光偵測器陣列的光提供影像數據輸 出。可使用光偵測器陣列以得到影像或使用在其他的影像 複製之應用中。色彩濾波器陣列（CFA)材料與光偵測器共 用以過濾入射影像感測器的光而允許形成全色彩的影像。 各遽波器允許預定之光色彩到達一對應的光偵測器，因此 偵測光器將感測那一種色彩。經由將光感測器分為數群， 可決定到達一區域的光強度及色彩。 由簡單不同的技術在電路板上安裝積體電路（IC)封裝， 该技術包含質量再回流及手動及熱桿焊接封裝到電路板 上。但是，手動焊接及熱桿焊接相當慢且昂貴。 -4 _ 本紙張尺度適用巾國國家標準（CNS)A4規格（21〇 X 297公髮) "" --------—— l·% (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 ^---------$ 麗^------------------------ [2492341249234 A7 B7 V. INSTRUCTIONS (1) ilJLi This case is the CIP (partially connected application) of US Patent Application No. 9/172,734. The application date of this case is 1 January, 1998. The invention relates to an image sensor mounted by mass reflow." Field of the Invention The field of the invention relates to an integrated circuit package. In particular, the invention relates to a quality reflow process for mounting a circuit board. Integral circuit package. 2. Description of Related Art Open-window integrated circuit packages are used in a variety of different applications, including light or other sources of radiation inside the integrated circuit package. Image sensors are open-window products. An application of a bulk circuit package, such as 'a photodiode array can be placed in a windowed integrated circuit package. The photodetector array provides image data output based on the light of the incident light detector array. A photodetector can be used The array is used to obtain images or used in other image reproduction applications. The Color Filter Array (CFA) material is shared with the photodetector to filter the light incident on the image sensor to allow for full color shadows. Each chopper allows a predetermined color of light to reach a corresponding photodetector, so the photodetector will sense that color. By dividing the photosensor into groups, the intensity of light reaching an area can be determined. Color. The integrated circuit (IC) package is mounted on the board by a simple and different technique, which includes mass reflow and manual and hot rod soldering to the board. However, manual soldering and hot rod soldering are quite slow and expensive. -4 _ This paper size applies to National Standard (CNS) A4 specifications (21〇X 297). "" --------—— l·% (Please read the notes on the back first) Fill in this page again) Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing ^---------$ Li ^---------------------- -- [249234

、發明說明（2 經濟部智慧財產局員工消費合作社印製 質量再回流板安裝技術爲一項相當快捷且自動化的程序 。質量再回流爲數據不同選擇中的一種，此技術可將记封 裝的技術提升到約215至225。〇。在這些上升的溫度中，在 積體電路板的墊片上的焊料融化，且附著到IC封裝上。在 焊料冷卻後，1(:封裝仍固定地耦合焊墊。質量再回流包含 紅外線’熱對流及蒸汽相效應。 可開窗塑膠封裝的非陶瓷封裝比陶堯封裝更需要，考量 其成本比對應的陶瓷開窗封裝還要低。但是，直到最近， 在質量再回流處理上的標準開窗塑膠封裝存在某些問題， 如蓋子裂開，晶粒從塑膠及玻璃開窗中去除一層及由於塑 膠及玻璃開窗心間熱膨脹不匹配所導致蓋子密封劑分開的 問題。直到最近，使用手動焊接以安裝這些開窗塑膠封裝 於電路板上，而維持大量的封裝可允許質量再回流處理的 上升溫度。 在與本案一同待審查之美國專利申請案案號09/172,710 ( 標題，，可質量再回流開窗非陶瓷封裝"，指定予英岱爾及 Ky0cera公司）中説明一開窗非陶资封裝，此封裝的確符合 質量再回流板安裝的熱需求。但是，需要減少内部應力。 此允許減少或去除加長的加熱時間，及延伸可質量再回流 之較大的封裝尺寸。 發明概述 積體電路（1C)封裝包含一鑄模化合物，一晶粒及一開窗 。鑄模化合物具有崁入其内的引線框。該引線框的熱膨脹 係數（CTE)小於鑄模化合物者。1(：封裝可經質量再回流處 ϋ n ϋ H ϋ ϋ n I n n ϋ ϋ · n n I ϋ n ϋ I J1T—、^ xa. I ^ a·· -a. »· ^ ^ I . (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 1249234 A7 五、發明說明（3 ) 理連接電路板。 量式之簡單說明 圖1顯7F由申清人修改之開窗四分平板包封（QFp)封裝1〇 的截面示意圖。 圖2A、2B及2C顯示封裝蓋子實施例的示意圖，其中包 含陶瓷引線框及玻璃開窗。 圖3A及3B顯示整個1C封裝封裝的示意圖。 圖4顯不一程序實施例，係用於將一晶粒連接到一開窗 非陶瓷封裝中。 圖5顯tf包含一崁入引線框之鑄模化合物實施例的截面 圖。 圖6及7分別顯示含及不含225t：IC封裝之包捲圖樣的模 擬結果。 圖8顯示崁入引線框之一實施例，該崁入引線框具有連 結崁入引線框侧邊的橫桿。 圖9A及9B顯示用於將一引線框崁入鑄模化合物之鑄模的 實施例。 圖10顯示一影像系統，此系統包含經質量再回流處理連 接一電路板的影像感測器。 詳細說明 本發明提出一種對於開窗非陶瓷積體電路（IC)封裝的改 進’其中該積體電路封裝可經一質量再回流處理加以安 裝。在1C封裝中鑄模化合物中崁入一引線框。當上升到與 質夏再回"瓦有關的局溫度時，此將減少I c封裝内部的應力。 -6- 本紙張尺度適用中國國家標準（CNS)A4^7_210 X 297公愛） ---- ---------------------訂---------線 (請先閱讀背面之注意事項再填寫本頁) !249234(Inventive Note (2) Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing quality reflow board installation technology is a fairly fast and automated program. Quality reflow is one of the different choices of data, this technology can be recorded in the packaging technology Raised to about 215 to 225. 在. At these rising temperatures, the solder on the pads of the integrated circuit board melts and adheres to the IC package. After the solder is cooled, 1 (: the package is still fixedly coupled to the solder Pad. Mass reflow includes infrared 'thermal convection and vapor phase effects. Non-ceramic packages in windowable plastic packages are more desirable than ceramic packages, considering the cost is lower than the corresponding ceramic window package. However, until recently, There are some problems with the standard windowed plastic package on the quality reflow process, such as the cracking of the cover, the removal of the die from the plastic and glass windows, and the cover sealant due to the thermal expansion mismatch between the plastic and the glass window. Separate issues. Until recently, manual soldering was used to mount these windowed plastic packages on the board, while maintaining a large number of packages allows for quality The rising temperature of the reflow process is described in U.S. Patent Application Serial No. 09/172,710 (title, quality reflow window non-ceramic package " designated to Inval and Ky0cera) A windowed non-ceramic package, this package does meet the thermal requirements of mass reflow plate installation. However, internal stresses need to be reduced. This allows for reduced or removed extended heating times and extended package size for extended mass reflow. SUMMARY OF THE INVENTION The integrated circuit (1C) package comprises a mold compound, a die and a window. The mold compound has a lead frame that is inserted therein. The lead frame has a coefficient of thermal expansion (CTE) less than that of the mold compound. : The package can be reflowed by mass ϋ n ϋ H ϋ ϋ n I nn ϋ ϋ · nn I ϋ n ϋ I J1T—, ^ xa. I ^ a·· -a. »· ^ ^ I . (Read first Note on the back side Fill in this page) Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed 1249234 A7 V. Invention description (3) Connect the circuit board. Simple description of quantity Figure 1 shows the window opened by Shen Qingren Quartering 2A, 2B, and 2C show a schematic view of an embodiment of a package cover including a ceramic lead frame and a glass window. Figures 3A and 3B show schematic views of the entire 1C package. A notable embodiment is used to connect a die to a windowed non-ceramic package. Figure 5 shows a cross-sectional view of an embodiment of a mold compound that is inserted into a leadframe. Figures 6 and 7 show And 256t: simulation results of the package pattern of the IC package. Figure 8 shows an embodiment of the intrusion leadframe having a crossbar that joins the sides of the leadframe. Figures 9A and 9B show An embodiment of a mold for injecting a lead frame into a mold compound. Figure 10 shows an image system comprising an image sensor connected to a circuit board by mass reflow processing. DETAILED DESCRIPTION The present invention provides an improvement to a windowed non-ceramic integrated circuit (IC) package in which the integrated circuit package can be mounted by a mass reflow process. A lead frame was inserted into the mold compound in the 1C package. This will reduce the stress inside the I c package when it rises to the local temperature associated with the summer. -6- This paper scale applies to China National Standard (CNS) A4^7_210 X 297 public) ---- --------------------- Order --- ------ line (please read the notes on the back and fill out this page) !249234

(請先閱讀背面之注意事項再填寫本頁) 申相人已發現經曰本Kyo_ Kyocer_司可使 塑膠Q㈣裝的修改，其允許塑膠封裝可容忍質量再^ 處理’而不會使得蓋子鏵模封裝分開或該晶粒與該轉模封 裝分開。另外’ _扣封裝可與具有高溫度穩定性的 CFA材枓結合’以產生維持色彩性能的影像感測器，而不 會曝露到質量再回流程序中。 下文説明可質量再回流的IC封裝’其係在共同待審之專 利申請案，中請案號爲G9/172,71G，標題爲"可質量再回* 之開窗非陶資封裝"，…英㈣公司及—公司： 下文説明加入崁入引線框於IC封裝之鑄模的改進方式。 i量再回流開窗非陶咨封_ 圖1顯示爲質量再回流之開窗QFP封裝1〇的透视圖方塊圖 。一非陶瓷鑄模封裝12組成封裝體。在一實施例中，應用 低溼度的塑膠製造該非陶瓷鑄模封裝，如由Kyocera公司研 究的ortho-cresol-novolac之低溼度鑄模化合物。在一實施例 中，下陷處22指使用噴出腳在形成後去除轉模封裝處。附 錄1包含Kyocera公司之低溼度鑄模化合物的材料特性。 經濟部智慧財產局員工消費合作社印製 晶粒固定劑14用於將晶粒16固定於定位。在一實施例中 ，晶粒固定劑14爲剛性的環氧樹脂，如由加州，Ranch〇 Dominguez的Ablestik電子材料及固定劑公司製造的填銀環氧 樹脂。 線連結18將晶粒16連接在引線框20中。選擇晶粒固定劑 14使將谷忍晶粒處理中上升的溫度。在質量再回流時，從 晶粒16連結14及铸模封裝12中去除一層的晶粒爲一項問題 -7 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 1249234(Please read the note on the back and then fill out this page.) Shen Xiangren has found that the Kyo_Kyocer_ can make the modification of the plastic Q (four), which allows the plastic package to tolerate the quality and then handle the 'without the lid铧The mold package is separated or the die is separated from the mold package. In addition, the _ buckle package can be combined with a CFA material having high temperature stability to produce an image sensor that maintains color performance without being exposed to a mass reflow procedure. The following describes the quality of the reflowable IC package, which is in the copending patent application, the case number is G9/172, 71G, the title is "The quality is back to * the window is not ceramic packaging" , ... British (4) company and company: The following describes the improvement of the injection mold into the lead frame in the IC package. i quantity and then reflow window non-porcelain seal _ Figure 1 shows a perspective block diagram of the open window QFP package for mass reflow. A non-ceramic mold package 12 constitutes a package. In one embodiment, the non-ceramic mold package is fabricated using a low humidity plastic such as the low humidity mold compound of ortho-cresol-novolac studied by Kyocera Corporation. In one embodiment, the depression 22 refers to the use of the ejection foot to remove the mold package after formation. Appendix 1 contains the material properties of Kyocera's low humidity mold compounds. The Ministry of Economic Affairs, Intellectual Property Office, Staff Consumer Cooperative, Printed Grain Fixing Agent 14 is used to fix the die 16 to the location. In one embodiment, the die attach agent 14 is a rigid epoxy resin such as a silver filled epoxy resin manufactured by Ablestik Electronic Materials and Fixing Agents Inc. of Ranch 〇 Dominguez, California. Wire bond 18 connects die 16 in leadframe 20. The grain fixative 14 is selected to bring the temperature up in the grain processing. When the mass is reflowed, removing a layer of grains from the die 16 and the mold package 12 is a problem. -7 - This paper scale applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 1249234

五、 發明說明（ 經濟部智慧財產局員工消費合作社印製 ，或者鑄模封裝12為質量再回流期間的一項問題。申請人 決定對於該鑄模化合物進行兩步驟的固化處理，此將:下 文中加以說明，參見圖3。 蓋子30封住鑄模封裝。在一實施例中。蓋子扣包含銘製 造的陶瓷引線框32。陶瓷引線框32固定透明的開窗。在— 實施例中，陶瓷引線框32包含内有玻璃開窗34的下凹的突 架。在該實施例中，鑄模封裝12及陶瓷引線框”使用雙酚 A型環氧樹脂密封。也可以使用環氧樹脂密封以密封陶瓷 引線框32到玻璃開窗34中。附錄2示適於使用在本發明中 的雙酚A型密封劑。 修改的開窗封裝尤其是適於（但是不限於）互補金氧半導 體（CMOS)影像感測器，考量其晶粒尺寸相當大（可過2二 milsX 240 mils)。適於一影像感測器之一封裝的實施例包含 一開窗，其面積微大於晶粒感光部位之面積。 在一實施例中，開窗大小約為晶粒感光部位面積的工2 倍。但是，開窗大於隨著與晶粒的距離而改變。圖2及3顯 示蓋子及鑄模封裝之實施例的示意圖。 圖2A、2B及2C顯示封裝蓋子30—實施例的示意圖，其 包含陶瓷引線框32及玻璃開窗34。第一尺寸的單位為 mils，而刮號内的尺寸為微米。在一實施例中，將玻璃開 窗34定位在陶瓷引線框32下胭突架40中。 圖3A及3B顯示依據本發明之整個IC封裝5〇之一實施例的 示意圖。指示一元件的第一尺寸為吋，第二吋（括號内）為 微米。雖然顯示的實施例包含一直接類型的導線架（四分 -8 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------^---------^ —^wi (請先閱讀背面之注意事項再填寫本頁) 1249234 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（6 ) 一平板封裝一 QFP)，但是也可以使用其他類型的封裝。而 且，可使用之封裝包含無導線封装，如球柵陣列（bga)封 裝，無導線晶片載體（LCC)封裝，及如雙線中封裝（Dlp)的 導線封裝’等等。 、 圖4示該程序之一實施例，係用於將一晶粒連接在開窗 非陶资封裝中。在步驟202中，曰曰口粒固定劑分配在鑄模封 裝上。在一實施例中，鑄模化合物包含如技術盛銀之環氧 樹脂的低剛性環氧樹脂。 η在步驟204中，持續進行該程序，其中刷除晶粒，或者 是來回移動，而應用壓力以固定地連接該晶粒在晶粒固定 ，中。作用在轉模封裝之平坦表面的良好晶粒連結劑爲附 著性者’而不必在晶粒後側艘金。 在步驟206中固化晶粒固定劑。重要的是在晶粒固定劑 :去除空胞，目此將導致去薄層上的問題。已知在晶粒固 疋劑上去除空胞時，二級固化處理優於單約固化。在一實 施例中，在約100X：的溫度下熱烘該晶粒固定劑約i小時， 然後在約150。。的溫度下，熱烘該晶粒固定劑⑴小時。 在方塊208中，在晶粒及鑄模封裝的導線架之間連接線 連結。 在方塊212中，將蓋子入在鑄模封裝上。在一實施例中 ’蓋子包㈣用雙㈣型環氧樹脂連接在陶资引線框训 玻璃開窗34。由加熱固化環氧樹脂。纟_實施例中，在溫 度上升到篆約持續70分鐘以進行該固化程序。在一實施 例中，使用用於將玻璃開窗34連接m線框32的相同環 I n I n n H ϋ i I I I i aame m n n ml I I I I 0 ϋ I I I ϋ ϋ ϋ I I I I ϋ I I ϋ ϋ n ϋ ϋ ϋ I (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 1249234 A7 〜 B7 五、發明說明（7 ) 氧樹脂，該蓋子連接鑄模封裝，且也經由將溫度上升到约 l5〇°C持續約7〇分鐘而固化該環氧樹脂。 在一實施例中，在符合等級sub 100的清潔室中，使用薄 板流體鉤，其中一微米小於100個粒，或每腕尺内包含更 少的粒子的污染。此有助於在組裝期間，防止粒子污染。 在一實施例中，開窗的刮除規格爲20微米，此規格表示 在玻璃中可允許之最大缺陷，此可干擾影像感測器的影像 性能。 爲將在執行質量再回流處理前密封封裝的溼氣，在裝袋 則使用延伸的加熱循環。在一實施例中，在125<)(:以加熱密 封封裝48小時，然後在溼氣的袋中眞空3以加以儲存或船 運此允許在封封裝可附合互連結及封裝電子電路（lpc)機 構的第四級表面安裝要求。（ lpc爲世界性電子互連結工業 的超過2300家公司的貿易協會）。 當安裝密封封裝時，將其從袋中去除，而且使用質量再 回⑽處理安裝在一電路板上，如方塊214中所示者。存在 各種不同類型的質量再回流處理。在一實施例中，使用ir/ 轉換質量再回流處理，其爲·· 1) 尖峰封裝體溫度約225°C。 2) 在215°C以上的時間約3〇秒。 3) 在183°C以上的時間約14〇秒。 開窗的非陶瓷封裝可忍受上述的質量再回流處理，而不 必將蓋子與鑄模封裝分開，或者是在鑄模封裝中去除晶粒。 I用炭入引線框i行質量再回流開窗韭陶瓷封奘 -10- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -- --------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 1249234 A7V. Description of invention (Printed by the Intellectual Property Office of the Intellectual Property Office of the Ministry of Economic Affairs, or the mold package 12 is a problem during mass reflow. The applicant decided to perform a two-step curing process on the mold compound, which will be: For illustration, see Figure 3. The cover 30 encloses the mold package. In one embodiment, the cover button includes a ceramic lead frame 32 that is fabricated. The ceramic lead frame 32 holds a transparent fenestration. In an embodiment, the ceramic lead frame 32 A recessed projection comprising a glass glazing 34 therein. In this embodiment, the mold package 12 and the ceramic lead frame" are sealed with a bisphenol A type epoxy resin. An epoxy resin seal can also be used to seal the ceramic lead frame. 32 to the glass fenestration 34. Appendix 2 shows a bisphenol A type sealant suitable for use in the present invention. The modified fenestration package is particularly suitable for, but not limited to, complementary metal oxide semiconductor (CMOS) image sensing. Considering that the grain size is quite large (can pass 2 2 milsX 240 mils). An embodiment suitable for one of the image sensor packages includes a window opening, the area of which is slightly larger than the grain photosensitive portion. In one embodiment, the window size is about twice the area of the photosensitive portion of the die. However, the window opening is larger than the distance from the die. Figures 2 and 3 show an embodiment of the cover and mold package. 2A, 2B, and 2C show a schematic view of an embodiment of a package cover 30 that includes a ceramic lead frame 32 and a glass fenestration 34. The first dimension is in mils and the size within the scratch is micrometer. In an embodiment, the glass fenestration 34 is positioned in the lower lead frame 40 of the ceramic lead frame 32. Figures 3A and 3B show schematic views of one embodiment of the entire IC package 5 in accordance with the present invention. For 吋, the second 吋 (in parentheses) is micron. Although the embodiment shown contains a direct type of lead frame (four points - 8 - this paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) --------^---------^ —^wi (Please read the notes on the back and fill out this page) 1249234 A7 B7 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing 5 Description of the Invention (6) A flat panel package (QFP), but other classes can also be used The package can also be used to include a leadless package such as a ball grid array (bga) package, a leadless wafer carrier (LCC) package, and a wire package such as a dual line package (Dlp). 4 shows an embodiment of the procedure for attaching a die to a fenestration non-ceramic package. In step 202, the mouthwash granule fixative is dispensed onto a mold package. In one embodiment, the mold is molded. The compound comprises a low-rigidity epoxy resin such as a technical silver-containing epoxy resin. η In step 204, the process is continued, wherein the die is removed, or moved back and forth, and pressure is applied to fixedly connect the die The grain is fixed, medium. A good die attach agent acting on the flat surface of the mold package is an adherent' without having to deposit gold on the back side of the die. The grain fixative is cured in step 206. What is important is that in the grain fixative: removing the empty cells, which will cause problems on the thin layer. It is known that secondary curing treatment is superior to single curing when removing empty cells on a grain solidifying agent. In one embodiment, the die fixative is thermally baked at a temperature of about 100X: for about i hours and then at about 150. . At the temperature, the grain fixative is heat-baked for (1) hours. In block 208, a wire bond is formed between the die and the leadframe of the mold package. In block 212, the cover is placed over the mold package. In one embodiment, the lid pack (four) is attached to the ceramic window frame glass window 34 by a double (tetra) type epoxy resin. The epoxy resin is cured by heating. In the embodiment, the curing process was carried out while the temperature was raised to about 70 minutes. In one embodiment, the same ring I n I nn H ϋ i III i aame mnn ml IIII 0 ϋ III a ϋ ϋ IIII ϋ II ϋ ϋ n ϋ ϋ 用于 for connecting the glass fenestration 34 to the m-wire frame 32 is used. I (please read the note on the back and then fill out this page) Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed 1249234 A7 ~ B7 V. Invention description (7) Oxygen resin, the cover is connected to the mold package, and also through the temperature rise The epoxy resin was cured by about 10 Torr for about 7 minutes. In one embodiment, in a clean room conforming to grade sub 100, a thin plate fluid hook is used, wherein one micron is less than 100 particles, or less pollen is contained within each caliper. This helps prevent particle contamination during assembly. In one embodiment, the fenestration has a scratch size of 20 microns, which indicates the maximum allowable defect in the glass, which can interfere with the image performance of the image sensor. In order to seal the moisture of the package prior to performing the mass reflow process, an extended heating cycle is used in the bagging. In one embodiment, at 125 <) (: packaged in a heat sealed enclosure for 48 hours, then hollowed out in a bag of moisture for storage or shipping. This allows for the attachment of interconnects and packaged electronic circuits in the package (lpc The organization's fourth-level surface mount requirements. (lpc is the trade association of more than 2,300 companies in the worldwide electronic interconnect industry.) When installing a hermetic package, remove it from the bag and use the mass to return (10) to handle the installation. On a circuit board, as shown in block 214. There are various types of mass reflow processes. In one embodiment, ir/conversion quality is used for reflow processing, which is ... 1) peak package temperature approx. 225 ° C. 2) Approximately 3 seconds at a time above 215 °C. 3) The time above 183 ° C is about 14 〇. The fenestrated non-ceramic package can withstand the above-described mass reflow process without necessarily separating the cover from the mold package or removing the die in the mold package. I use carbon into the lead frame i line quality reflow window 韭 ceramic seal -10- This paper scale applies to China National Standard (CNS) A4 specifications (210 X 297 mm) --------- --------- Line (please read the notes on the back and fill out this page) 1249234 A7

五、發明說明（8 ) 圖5顯示包含一崁入引線框3〇〇之鑄模化合物實施例的截 面圖。鑄模化合物大致上包圍該引線框。可包圍或不包圍 底面。在一實施例中，由陶瓷製造該引線框以符合陶瓷引 線框的CTE，而加寬1C封裝的開窗。在另一實施例中，謙 具有比鑄模化合物低的CTE製造該材料。例如，引線框可 包含一銅/鎢合金或合金一 42(包含42 %鎳及58%鐵的合 金），此常使用在導線中。 因為在1C封裝内的應用力很難量測，所以由有限元素 法’模擬該應力的模型，此為一般在機械設計上的工具。 表1顯示在鑄模化合物，晶粒固定劑，石夕晶粒，開窗密封 劑’開窗，陶瓷引線框及導線中模擬之CTES的代表性數 值。表1也顯示揚氏係數（指示材料之硬度）及布松比（指示 在正交方向拉開時，在單一方向的變形比），其為在此模 擬中使用者。 表1 ·在不同溫度下的材料性能 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 組件 不 同溫度下的模數2 材料特性/°c 布松比 氺氺氺 25〇C 150°C 155〇C 225 °C 25〇C 150°C 155〇C 225〇C 鑄模 化合物* 14.4 14.4 2.1 2.1 11.4 11.4 48.1 48.1 .23 晶粒 連接件* 8.0 .08 .08 •08 25 25 130 130 .3 矽晶粒 130 130 130 130 2.6 3.2 3.2 3.6 .23 開窗 密封件** 4.2 4.2 .045 .045 62.1 62.1 186 186 .35 玻璃開窗 72.9 72.9 72.9 72.9 6.8 7.5 7.5 7.9 •208 陶瓷開窗 引線架 280.5 275.6 275.6 272.6 5.74 6.76 6.76 7.38 .25 與導線 (合金42) 145 145 145 145 4.5 4.5 4.5 4.5 .3 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 1249234 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（9 ) *用於鑄模化合物及密封劑之玻璃遷移溫度。 * *晶粒固定劑的Tg為103°c。 * * *從25到225°C内認為布松比為固定者。 依據上表，在25到Tg内鑄模封裝，晶粒固定劑及密封劑的 材料性能維持固定，然後從Tg+ 5 °C到225°C内，改變到不同 的數值。矽性能反應[110]方向。 表2為使用包含合金42之崁入引線框的jc封裝之内部應 力減少的結果。鑄模結果顯示在具有崁入引線框之IC封裝 中在後侧晶粒及鑄模封裝之間及蓋子及鑄模封裝之間的環 氧樹脂表面上均減少相當的數量。此應力減少使其易於經 質量再回流連接到較大的封裝中，考量較大的封裝更易於 在溫度極限下接受内部應力，其限於質量再回流溫度。 表2 在封裝中的捲繞底*， μπι 在晶粒連結件中的最大 Von Mises 壓力 Mpa 在開窗密封中的最大 Von Mises 應用，MPa 溫度 -65 25 225 -65 25 225 -65 25 225 無崁入 引線框 -45.4 -26.4 +60.0 179.3 104.3 16.4 129.8 76.9 5.8 有嵌入 引線框 -23.4 -13.6 +13.3 136.5 79.4 4.8 133.2 77.4 4.7 I異，％ 48.5 48.5 77.8 23.9 23.9 70.3 -2.6 -0.65 19.0 * + /—符號指示凸/凹包封。 圖6及7分別顯示用於具有崁入引線框及不具崁入引線框 之1C封裝而在225。(：的模擬包封圖樣。可看出使用崁入引線 框時，包封已減少很多。 崁入引線框可具有多種形狀。但是，為了減少成本，可 -12- 本紙張尺度適用中國國豕標準（CNS)A4規格（210 x 297公爱) --------^--------- (請先閱讀背面之注意事項再填寫本頁) 1249234 A7 ________B7 五、發明說明（1Q ) 使用如圖2之開窗引線框32的縮小型式的簡單設計。申請 (請先閱讀背面之注意事項再填寫本頁) 人已發現甘圖5，6所示可將崁入引線框與晶粒周圍重疊而 得到最好的結果。 在一實施例中’崁入引線框300包含連接側邊304的橫样 302，以如圖8中所示者，得到額外的支撐。在開窗引線框 32的縮小型式中，突出架將崁入引線框固定地維持在鑄模 化合物中。引線框可使用更複雜的形狀（如峰巢形），但是 炭入引線框所增加的額外成本需要夠低，使得整個封裝仍 不不會比完成的陶瓷引線框還貴。 在另一實施例中，使用開窗引線框的全開窗連接鑄模化 合物。一炭入引線框減少在處理期的應用。例如，可使用 由合金- 42(CTE〜4.5 ppm/C)，銅/鎢合金（CTE〜6.5 ppm/C)，或陶瓷引線框（CTE〜7 4 ppm/c)。 麵模程序 圖9A，叩示鑄模之實施例，該鑄模可用於在引線框崁 入麵模化合物中。圖9A顯示在鑄模空腔340中定位崁入引 線框300的~模之截面圖。圖9B為從炭入引線框3〇〇往下看 之圖9A中虛線350的鑄模空腔的上視圖。 經濟部智慧財產局員工消費合作社印製 在一實施例中，使用止動劑342以將崁入引線框3〇〇固定 在定位。在鑄模空腔侧的移動劑及閘極36〇提供鑄模化合 物的來源。设計移動劑及閘極於鑄模空腔34〇中的位置使 得鑄模化合物可將壓力作用在崁入引線框的上表面，且維 持坎入引線框於鎮模空腔340。的下方。在鑄模反侧上的 氣孔362允许空氣在铸模化合物作用在鍀模空腔時可驅 -13- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） A7 1249234 五、發明說明（11) 離。當提供鑄模化合物予鏵模空腔34〇時，嵌入導線架谓。 在一實施例中’同時製造多個鑄模封裝。該鑄模封裝以 熟知方式在條帶上端對端連結。在另一處理步驟中轉模封 裝互相分開。 成像系統 。，圖賴示包含使用具有炭入引線框之冗封裝的影像感測 条疋影像系統400 »影像感測器經質量再回流處理連接電 路板。使用影像感測器彻作爲相機，梦眼或其他影像二 置的-部份。基本上，影像感測器電連接到一影像處理器 420及-記憶體43〇。影像系統也包含互連結電路物，以 與其他系統聯通，如主機電腦系統或其他的輸出裝置。影 像系統也包含一透鏡系統(圖中沒有顯示)以將光聚焦在： 像感測器上’如習知技術中熟知者。 經質量再回流處理連接影像感測器的能力將減少成本， 且加速製造程序。也提供比手動焊接更簡單的連接方法。 因此，文中已説明一可經質量再回流處理安裝到一電路 板I崁入引線框的1C封裝。文中説明的特定配置及方法只 用於説明本發明的原理。熟習本技術者可對於上述本發明 進行多種不同的修改也不偏離本發明的精神及觀點。例如 ，由於在後側晶粒及鑄模封裝之間及蓋子及鑄模封裝之間 環氧樹脂介面内部應力之崁入引線框所導致的減少，可不 需要延伸的加熱循環。文中説明的本發明並非用於限制本 發明。本發明的範圍係由下文中申請專利範圍的觀點所界 定。 ____ -14- 本紙張Z度適用中國國家標準（CNS)A4規格（21G X 297公爱） --------t---------^ i^w— (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 1249234 A7 B7 五、發明說明（ 經濟部智慧財產局員工消費合作社印製 12 放射計數(DPH) 介電常數[1 MHz][室溫] 積體阻力（室溫） 玻璃傳送溫度（Tg) 結合彈性 結合強度 熱膨脹(αΐ) 導熱率(室溫） 〇 η 〇 § 〇 日to X 00 2X ΙΟ15 Ω · cm 163〇C 18GPa 0.14 GPa 150 X 10'7/〇C?490 X 10"7/°C 0.8 w/m · k 額定值 耸单等(E0I1B S丨潜#薛) -------.---— 1®^--------訂---------線# (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 1249234 , A7 _B7 五、發明說明（12 ) N 〇· KSD-248-0 108-V. INSTRUCTION DESCRIPTION (8) Figure 5 shows a cross-sectional view of an embodiment of a mold compound comprising a lead frame 3〇〇. The mold compound substantially surrounds the lead frame. Can surround or not surround the bottom surface. In one embodiment, the leadframe is fabricated from ceramic to conform to the CTE of the ceramic leadframe while widening the fenestration of the 1C package. In another embodiment, the material has a lower CTE than the mold compound to make the material. For example, the leadframe may comprise a copper/tungsten alloy or alloy 42 (a alloy comprising 42% nickel and 58% iron), which is often used in wires. Since the applied force in the 1C package is difficult to measure, the model of the stress is simulated by the finite element method, which is a tool generally used in mechanical design. Table 1 shows representative values of CTES simulated in the mold compound, the grain fixer, the Shih-Yu grain, the window sealer 'windowing, the ceramic lead frame and the wire. Table 1 also shows the Young's modulus (indicating the hardness of the material) and the Busson's ratio (indicating the deformation ratio in a single direction when pulled in the orthogonal direction), which is the user in this simulation. Table 1 · Material properties at different temperatures (please read the notes on the back and fill out this page) Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Printed Modules Modules at Different Temperatures 2 Material Properties / °c Closonnex氺氺25〇C 150°C 155〇C 225 °C 25〇C 150°C 155〇C 225〇C Molding compound* 14.4 14.4 2.1 2.1 11.4 11.4 48.1 48.1 .23 Die connector* 8.0 .08 .08 • 08 25 25 130 130 .3 矽 die 130 130 130 130 2.6 3.2 3.2 3.6 .23 window seal ** 4.2 4.2 .045 .045 62.1 62.1 186 186 .35 glass opening 72.9 72.9 72.9 72.9 6.8 7.5 7.5 7.9 • 208 Ceramic window lead frame 280.5 275.6 275.6 272.6 5.74 6.76 6.76 7.38 .25 with wire (alloy 42) 145 145 145 145 4.5 4.5 4.5 4.5 .3 This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 mm) 1249234 Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Printed A7 B7 V. Invention Description (9) * Glass migration temperature for mold compounds and sealants. * * The grain fixative has a Tg of 103 ° C. * * * The Buzon ratio is considered to be fixed from 25 to 225 °C. According to the above table, the material properties of the mold fixing agent and the sealant are fixed in the mold package from 25 to Tg, and then changed from Tg + 5 ° C to 225 ° C to different values.矽 Performance response [110] direction. Table 2 shows the results of the internal stress reduction of the jc package using the intrusion leadframe containing alloy 42. The results of the molding showed a considerable reduction in the surface of the epoxy resin between the backside die and the mold package and between the cover and the mold package in the IC package having the lead frame. This reduction in stress makes it easy to reflow to a larger package via mass re-flow, and larger packages are more susceptible to internal stresses at temperature limits, which are limited to mass reflow temperatures. Table 2 Winding bottom in the package*, μπι Maximum Von Mises pressure in the grain joint Mpa Maximum Von Mises in the window seal application, MPa Temperature -65 25 225 -65 25 225 -65 25 225 None Into the lead frame -45.4 -26.4 +60.0 179.3 104.3 16.4 129.8 76.9 5.8 With embedded lead frame -23.4 -13.6 +13.3 136.5 79.4 4.8 133.2 77.4 4.7 I, % 48.5 48.5 77.8 23.9 23.9 70.3 -2.6 -0.65 19.0 * + / - The symbol indicates a convex/concave envelope. Figures 6 and 7 show a 1C package for use with an intrusion leadframe and without a leadframe, respectively, at 225. (: The analog encapsulation pattern. It can be seen that the encapsulation has been reduced a lot when using the lead frame. The intrusion lead frame can have a variety of shapes. However, in order to reduce the cost, the paper size can be applied to the Chinese national standard. Standard (CNS) A4 specification (210 x 297 public) --------^--------- (Please read the note on the back and fill out this page) 1249234 A7 ________B7 V. Invention Description (1Q) Use the simple design of the reduced version of the window lead frame 32 as shown in Figure 2. Application (please read the note on the back and then fill out this page) It has been found that the map can be inserted into the lead as shown in Figure 5,6. The frame overlaps the periphery of the die to give the best results. In one embodiment, the intrusion leadframe 300 includes a transverse pattern 302 that joins the sides 304 to provide additional support as shown in Figure 8. In the reduced version of the window leadframe 32, the ledge holds the pinned leadframe fixedly in the mold compound. The leadframe can use more complex shapes (such as peak nesting), but the additional cost of charcoal entry into the leadframe requires Low enough that the entire package is still not more expensive than the finished ceramic lead frame In another embodiment, the mold compound is joined using a fully open window of the windowed leadframe. A char-in leadframe reduces application during processing. For example, alloy-42 (CTE~4.5 ppm/C), copper can be used. /Tungsten alloy (CTE ~ 6.5 ppm / C), or ceramic lead frame (CTE ~ 7 4 ppm / c). Surface mold program Figure 9A, showing an example of a mold, which can be used to break into the surface mold in the lead frame In the compound, Fig. 9A shows a cross-sectional view of the die of the lead frame 300 positioned in the cavity 340 of the mold. Fig. 9B is a cavity of the mold of the broken line 350 of Fig. 9A viewed from the carbon into the lead frame 3〇〇. The upper view. Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Printed In one embodiment, a stopper 342 is used to fix the intrusion lead frame 3〇〇 in position. The moving agent and gate 36 on the cavity side of the mold cavity Providing a source of the mold compound. The design of the moving agent and the position of the gate in the cavity 34 of the mold allows the mold compound to apply pressure to the upper surface of the leadframe and maintain the recessed leadframe in the cavity 340. Below the air hole 362 on the opposite side of the mold allows the air to be molded When the object acts on the cavity of the die, it can be driven-13- This paper scale is applicable to China National Standard (CNS) A4 specification (210 X 297 public) A7 1249234 V. Invention description (11). When the mold compound is supplied to the mold In the case of the cavity 34, the lead frame is embedded. In one embodiment, a plurality of mold packages are simultaneously fabricated. The mold packages are joined end to end in a well-known manner on the strip. In another processing step, the mold packages are separated from each other. The imaging system includes an image sensing strip image system 400 using a redundant package with a char-in lead frame. The image sensor is connected to the circuit board by mass reflow processing. Use the image sensor as part of the camera, dream eye or other image. Basically, the image sensor is electrically coupled to an image processor 420 and a memory 43A. The imaging system also includes interconnecting junctions to communicate with other systems, such as host computer systems or other output devices. The imaging system also includes a lens system (not shown) to focus the light on: like a sensor' as is well known in the art. The ability to connect image sensors via mass reflow processing will reduce costs and speed up manufacturing processes. It also provides a simpler connection method than manual soldering. Therefore, a 1C package that can be mounted to a circuit board I to be inserted into a lead frame by mass reflow processing has been described. The specific configurations and methods illustrated herein are merely illustrative of the principles of the invention. A person skilled in the art can make various modifications to the invention described above without departing from the spirit and scope of the invention. For example, an extended heating cycle may not be required due to the reduction in the internal stress of the epoxy interface between the backside die and the mold package and between the cap and the mold package. The invention described herein is not intended to limit the invention. The scope of the invention is defined by the following claims. ____ -14- This paper Z degree is applicable to China National Standard (CNS) A4 specification (21G X 297 public) --------t---------^ i^w- (please first Read the notes on the back and fill out this page.) Ministry of Economic Affairs Intellectual Property Office Staff Consumer Cooperative Printed 1249234 A7 B7 V. Invention Description (Ministry of Economics, Intellectual Property Office, Staff Consumer Cooperative Printed 12 Radiation Count (DPH) Dielectric Constant [1 MHz ][Room temperature] Integrated resistance (room temperature) Glass transfer temperature (Tg) Combined with elastic bond strength Thermal expansion (αΐ) Thermal conductivity (room temperature) 〇η 〇§〇 to X 00 2X ΙΟ15 Ω · cm 163〇C 18GPa 0.14 GPa 150 X 10'7/〇C?490 X 10"7/°C 0.8 w/m · k Ratings, etc. (E0I1B S丨潜#薛) -------.--- — 1®^--------Book---------Line# (Please read the notes on the back and fill out this page.) This paper size applies to the Chinese National Standard (CNS) A4 specification ( 210 X 297 mm) 1249234 , A7 _B7 V. Description of invention (12 ) N 〇· KSD-248-0 108-

KYOCERA 技術文件—…> 公司半導體部門 —‘ \ _第四課密封件謀 密封件 M C 0’ 一】•气P只_. (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 2 可靠度·… C 斷乂二，：KIL-STfr 3830 1014) 測試項目' .MIL-STD ββ30 條件 NC2iH>10Q 溫度循環I 1010-CQND C -85t-150t iQCycles 0/100 熱震· 1011-C0ND· A Ot-lQOt 4QCycIee 0/100 衝阻j . 2QQ2-C0N0* B lSQOa.O.SM^Tiiea • 0/100 高溫儲存 lQQd'«C0N0 C lSOX/lOOOH · 'o/.ioo 低溫儲存 -flSt/lOOQH 0/100 高溫溼度卜 - 8St# 55XRH#1O00H 0/100 壓力烘培 121t(0.21MPa.50H 0/100 注意 陶瓷固化‘ ：：（·7<Ϊ8吋.3Q :密封寬度 m十） -t6- 1 物理性質… - 項目 Unit D a. t a ' 色彩. Tranilucence 特定空腔：-·· · 1 · 7 '*剪力強度/ MPa 2 6 . 4 a 熱脹係數· \ … i/m〇y 7 .玻璃傳送點i …， · •c 16 0 吸水性 '~— 介電係數、- · .«(IMHO 6 耗損因素：. · taaKlMH:) ο. o a 熱導 f :) · .，· · V/n-K — 表面阻力 .- · 0 1 . 0X10“ 注意 J判斷:〇SAHple :陶瓷/陶瓷 本紙張尺度適用中國國家標準（CNS)A4規格（210 χ 297公釐）KYOCERA Technical Documents—...> Company Semiconductor Division—' _ _ 4th Seal Seals MC 0' One] • Gas P only _. (Please read the notes on the back and fill out this page) Ministry of Economics Intellectual Property Bureau employee consumption cooperative printing 2 Reliability... C 乂 2, KIL-STfr 3830 1014) Test item '.MIL-STD ββ30 Condition NC2iH>10Q Temperature cycle I 1010-CQND C -85t-150t iQCycles 0/100 Thermal Shock · 1011-C0ND· A Ot-lQOt 4QCycIee 0/100 Impedance j . 2QQ2-C0N0* B lSQOa.O.SM^Tiiea • 0/100 High temperature storage lQQd'«C0N0 C lSOX/lOOOH · 'o/. Ioo Low Temperature Storage-flSt/lOOQH 0/100 High Temperature Humidity - 8St# 55XRH#1O00H 0/100 Pressure Baking 121t (0.21MPa.50H 0/100 Note Ceramic Curing ' ::(·7<Ϊ8吋.3Q: Seal Width m ten) -t6- 1 Physical properties... - Item Unit D a. ta 'Color. Tranilucence Specific cavity: -·· · 1 · 7 '*Shear strength / MPa 2 6 . 4 a Thermal expansion coefficient · \ ... i/m〇y 7 . Glass transfer point i ..., · • c 16 0 Water absorption '~—— Dielectric coefficient, - · .«(IMHO 6 Loss factor: · · taaKl MH:) ο. oa Thermal Conduction f :) · ., · · V/nK — Surface Resistance.- · 0 1 . 0X10“ Note J: 〇SAHple: Ceramic/Ceramic Paper Size Applicable to Chinese National Standard (CNS) A4 size (210 χ 297 mm)

Claims (1)

12492^8122398號專利申請案 中文申請專利範圍替換本(92年4月） c8 了1 •丨人Η \ Γ.申請專利範圍Patent application No. 12492^8122398 Replacement of Chinese patent application scope (April 1992) c8 1 • 丨人Η \ Γ. Patent application scope 1 · 一種積體電路（1C)封裝，包含： 一鑄模化合物，該鑄模化合物 , 物具有一崁入其内的引始 框，孩引線框的熱膨脹係數（CT 、、泉 、 E)小於鑄模化合物； 一連接鑄模化合物的晶粒；以及 一連接鑄模封裝以允許光到達晶粒的開窗。 2.如申請專利範圍第丨項之扣封 瓷。 可衮，其中孩引線框包含陶 3 ·如申請專利範圍第i項之Ic封裝合金。4 ·如申請專利範圍第3項之1C封裝 金-42。 5 ·如申請專利範園第1項之ic封裝5 加寬開窗的開窗引線框，該開窗引線框的cte小於鑄 模化合物的CTE。 6.如申請專利範圍第5項之IC封裝，其中該開窗引線框 材料與該引線框相同。7 ·如申叫專利範圍第1項之ic封裝，其中該引線框置於 粒周圍下方。 8· —種製造1C封裝之方法，該方法包含下列步驟：將一引線框置於一鑄模中，該引線框具有一頂表面、 一底表面以及在其間具有一頂部至底部之開口之一最外 側表面；以及 利用一鑄模化合物，大體上包圍並直接接觸該引線框 其中該引線框包含_ 其中該引線框包含合 裝 其中尚包含·· η 由 線 曰田 本紙張尺度適用中國國家標準(CNS) Α4規格(210X297公釐) 1249234 六、申請專利範園 之頂表面與最外侧表面。 9.如申請專利範圍第8項之方法，其中應用-鑄模化合物 大致上包㈣線框的步驟係應料模化合物大致上包圍 該陶瓷引線框。 1〇·如申請專利範圍第8項之方法，其中應用-鑄模化合物 大致上包圍引線框的步驟係應騎模化合物大致上包園 該合金引線框。 U.如申請專利範圍第8項之方法，其中應用-•模化合物 大致上包圍引線框的步驟係應用鑄模化合物大致上包圍 該合金-42引線框。 12·如申請專利範圍第8項之方法，其中尚包含·· 連接一晶粒到該鑄模化合物；以及 經由連接開窗到鏵模化合物封閉該晶粒。 •如申請專利範圍第12項之方法，其中連接晶粒到轉模化 合物的步驟包含定位該晶粒，使得其周圍置於引線框 上。 ’ 14. 一種製造1C封裝之方法，該方法包含： 連接一晶粒至具有一内嵌的引線框之一缚 該引線框具有一頂表面、一底表面、一在其中=至 底部之開口以及一最外側表面，該鑄模化合物大俨上包 圍該最外側表面；以及 匕 連接一開窗至該鑄模化合物以便包圍該晶粒。 15. 如申請專利範圍第14項之方法，其中連接晶粒到鑄模化 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公董) ABCD 1249234 六、申請專利範圍 合物的步騾包含定位該晶粒使得其周圍在該引線框上。 16·如申請專利範圍第14項之方法，其中連接開窗到鑄模化 0物的步驟尚包含下列步驟： 連接開窗到合金開窗引線框；以及 連接合金開窗引線框到鑄模化合物。 17. 如申請專利範圍第14項之方法，其中連接開窗到鑄模化 合物的步驟尚包含： 連接該開窗到陶瓷開窗引線框；以及 連接陶瓷開窗引線框到鑄模化合物。 18. —種方法，包含下列步驟： 放置一1C封裝於一電路板之附近；以及 經質量回流處理而將該〗c封裝連接至該電路板，其 中該I C封裝包含具有嵌入引線框之一鑄模化合物，其 中違欲入引線框具有小於該鎊模化合物之熱膨脹係數 (C T E )之熱膨脹係數，該引線框具有一頂表面、一底 表面以及一最外側表面，該鑄模化合物大體上包圍該最 外側表面。 19·如申請專利範圍第18項之方法，其中連接IC封裝到電路 板的步驟包含加熱1C封裝到215°C以上。 20·如申請專利範圍第8項之方法，其中該引線框具有小於 該鑄模化合物之熱膨脹係數（(：1：]£)之熱膨脹係數。 21·如申請專利範圍第8項之方法，其中該I C封裝用於抵抗 一質量再回流過程。 本紙張尺度適用中國國家標準(CNS) A4規格公爱) 1249234 - B8 C8 D8 六、申請專利範圍 22. 如申請專利範圍第8項之方法，進一步包括： 連接一晶粒至該鑄模化合物； 連接一開窗至一蓋子；以及 連接該蓋子至該鑄模化合物。 23. —種製造1C封裝之方法，該方法包含下列步驟：放置 一引線框於一鑄模中，該引線框具有一頂表面、一底表 面以及在其間具有一頂部至底部之開口之一最外側表 面，其中該引線框包含一陶瓷；以及 利用一鑄模化合物大體上包圍該引線框之最外側表 面。 24. —種製造I C封裝之方法，該方法包含下列步騾： 放置一引線框於一鑄模中，該引線框包含該I C封裝 之内部； 利用一鑄模化合物包圍該引線框； 放置該I C封裝之引線架至該引線框之外部； 放置該I C封裝之一晶粒至該引線架之外部；以及 放置該I C封裝之一開窗至該晶粒之外部。 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)1 . An integrated circuit (1C) package comprising: a mold compound having a lead frame inserted therein, and a thermal expansion coefficient (CT, spring, E) of the lead frame of the child is smaller than a mold compound a die connecting the mold compound; and a fenestration that connects the mold package to allow light to reach the die. 2. If the patent application scope is the same as the buckled porcelain. It can be awkward, in which the child lead frame contains the ceramic 3 · Ic package alloy as claimed in the scope of claim i. 4 · 1C package -42 as in the third paragraph of the patent application. 5 • If the ic package 5 of the patent application No. 1 is applied to widen the windowed lead frame, the cte of the window lead frame is smaller than the CTE of the mold compound. 6. The IC package of claim 5, wherein the window lead frame material is the same as the lead frame. 7 • The ic package of claim 1 of the patent scope, wherein the lead frame is placed under the grain. 8. A method of fabricating a 1C package, the method comprising the steps of: placing a leadframe in a mold having a top surface, a bottom surface, and one of a top to bottom opening therebetween An outer surface; and a mold compound substantially surrounding and directly contacting the lead frame, wherein the lead frame comprises _ wherein the lead frame comprises a spliced product which still contains ·· η by the line 曰田本纸标准Applicable to the Chinese National Standard (CNS ) Α 4 size (210X297 mm) 1249234 6. Apply for the top surface and the outermost surface of the patent garden. 9. The method of claim 8, wherein the step of applying - the mold compound substantially encloses the (four) wire frame is such that the mold compound substantially surrounds the ceramic lead frame. 1) The method of claim 8, wherein the step of applying the mold compound substantially surrounding the lead frame is to substantially envelop the alloy lead frame. U. The method of claim 8, wherein the step of applying the mold compound substantially surrounds the lead frame by applying a mold compound substantially surrounding the alloy-42 lead frame. 12. The method of claim 8, wherein the method further comprises: joining a die to the mold compound; and sealing the die via a fenestration to a die compound. The method of claim 12, wherein the step of joining the die to the mold compound comprises positioning the die such that it is placed on the lead frame. 14. A method of fabricating a 1C package, the method comprising: connecting a die to one of an embedded leadframe, the leadframe having a top surface, a bottom surface, an opening in the = to the bottom, and An outermost surface, the mold compound surrounds the outermost surface on a large side; and the crucible is joined to a mold compound to surround the mold. 15. For the method of applying for the scope of patent No. 14, in which the grain is connected to the mold, the paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 Gongdong) ABCD 1249234. The step of applying for the patent range includes positioning. The die is placed on the lead frame. 16. The method of claim 14, wherein the step of joining the window to the mold casting further comprises the steps of: joining the window to the alloy window lead frame; and joining the alloy window lead frame to the mold compound. 17. The method of claim 14, wherein the step of joining the window to the mold compound further comprises: joining the window to the ceramic window lead frame; and connecting the ceramic window lead frame to the mold compound. 18. A method comprising the steps of: placing a 1C package adjacent to a circuit board; and connecting the package to the circuit board by mass reflow processing, wherein the IC package comprises a mold having an embedded lead frame a compound wherein the off-the-shelf lead frame has a coefficient of thermal expansion that is less than a coefficient of thermal expansion (CTE) of the pound mold compound, the lead frame having a top surface, a bottom surface, and an outermost surface, the mold compound substantially surrounding the outermost side surface. 19. The method of claim 18, wherein the step of attaching the IC package to the circuit board comprises heating the 1C package to above 215 °C. The method of claim 8, wherein the lead frame has a coefficient of thermal expansion that is less than a coefficient of thermal expansion of the mold compound ((: 1:: £). 21) The method of claim 8, wherein The IC package is used to resist a mass reflow process. This paper scale applies to the Chinese National Standard (CNS) A4 specification public interest) 1249234 - B8 C8 D8 VI. Patent application scope 22. The method of applying for patent scope item 8 further includes : connecting a die to the mold compound; connecting a window to a cover; and connecting the cover to the mold compound. 23. A method of fabricating a 1C package, the method comprising the steps of: placing a leadframe in a mold having a top surface, a bottom surface, and an outermost side having a top to bottom opening therebetween a surface, wherein the lead frame comprises a ceramic; and substantially enclosing the outermost surface of the lead frame with a mold compound. 24. A method of fabricating an IC package, the method comprising the steps of: placing a leadframe in a mold, the leadframe comprising an interior of the IC package; surrounding the leadframe with a mold compound; placing the IC package Leading the lead frame to the outside of the lead frame; placing a die of the IC package to the outside of the lead frame; and placing one of the IC package to open the window to the outside of the die. This paper scale applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm)
TW088122398A 1998-12-21 1999-12-20 Windowed non-ceramic package having embedded frame TWI249234B (en)

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