CN1322563C - Laser annealing device for preparing polycrystal system membrance layer and method for forming polycrystal system membrance layer - Google Patents
Laser annealing device for preparing polycrystal system membrance layer and method for forming polycrystal system membrance layer Download PDFInfo
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- CN1322563C CN1322563C CNB2004100004329A CN200410000432A CN1322563C CN 1322563 C CN1322563 C CN 1322563C CN B2004100004329 A CNB2004100004329 A CN B2004100004329A CN 200410000432 A CN200410000432 A CN 200410000432A CN 1322563 C CN1322563 C CN 1322563C
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Abstract
The present invention provides a laser annealing device for preparing polycrystal system membrane layers, which can avoid damaging non-crystal system layers at the fringe region of a base board during laser annealing. The laser annealing device comprises a shielding structure which can shield laser at the fringe region of a base board to avoid the laser completely irradiating the non-crystal system membrane layers at the fringe region of the base board when the non-crystal system membrane is under the process of laser annealing to form polycrystal system membrane layers. The present invention also provides a method for forming polycrystal system membrane layers by using the laser annealing device to carry out laser crystallization.
Description
Technical field
The present invention is relevant for a kind of laser anneal device in order to the preparation polycrystalline silicon membrane, and particularly relevant for a kind of continous way lateral solidification method (sequential lateral solidification that utilizes; SLS) carry out operation (the low temperature poly silicon process of low temperature polycrystalline silicon; LTPS process) employed laser anneal device.
Background technology
Thin-film transistor is an active digit group type flat-panel screens active block (activeelement) commonly used, is commonly used to drive active formula LCD (active matrix type liquidcrystal display), active formula organic electro-luminescent display devices such as (active matrix typeorganic light-emitting display).Semiconductor silicon film in the thin-film transistor generally can be divided into polysilicon (poly-silicon) film and amorphous silicon (amorphoussilicon, a-Si:H) film.
Though amorphous silicon membrane possesses low process temperature, is fit to a large amount of produce because of available vapour deposition process prepares, the operation technology than maturation thereby yield also than advantages such as height, but imitate mobility and make characteristics such as transistor can be applicable in the circuit of high service speed, the integration of drive circuit is preferable because the conductive characteristic of polysilicon is good, use the thin-film transistor of polysilicon film to have higher field, add the exploitation of low temperature polycrystalline silicon operation, gradually replace amorphous silicon membrane.
The manufacture method of common polysilicon membrane roughly has three kinds, first kind is to utilize deposition step directly to deposit formation, second kind is to utilize heat energy to make it crystallize into polysilicon membrane after forming amorphous silicon membrane earlier, and the third is to utilize laser to make it crystallize into polysilicon membrane after forming amorphous silicon membrane earlier.Yet above-mentioned method has following shortcoming, and the shortcoming of first method is to deposit the enough thick polysilicon film that could form big crystal grain, and its surface evenness is poor, and required process temperature is also up to 600 degree.Though second method can produce thin thickness and uniform polysilicon membrane, however the required temperature of its crystallisation step up to 600 degree, heat budget height, and the required time is long, can influence productive rate.The process temperature of the third method is low, and tradition is with quasi-molecule laser annealing (excimer laserannealing; ELA) mode makes amorphous silicon be converted to polysilicon, but its sweep speed has only 0.2mm/sec, and energy is 370mJ/cm only
2, not only productive rate is low, is subject to the size of energy, and the crystallization situation often only betides the surface, makes whole layer amorphous silicon recrystallize into the purpose of polysilicon and can't reach.Use sweep speed fast (30mm/sec) and laser energy height (600mJ/cm
2) continous way lateral solidification (SLS) laser annealing handle and to make amorphous silicon change into polysilicon, can solve the above problems.But, because amorphous silicon membrane is deposited on thickness and heterogeneity on the glass substrate edge, as shown in Figure 1, it illustrates the schematic diagram of the tradition amorphous silicon layer 14 that deposition forms on the resilient coating 12 of glass substrate 10, usually the amorphous silicon layer 14 at glass substrate 10 fringe region A can be thin than zone line (being main region) C, when laser is beaten at amorphous silicon membrane 14 thin locations, promptly fringe region A can be damaged because of laser easily.Yet the alignment mark lay down location of contraposition will be made in this zone normally back segment operation, so causes the interruption of back segment operation easily.
With regard to continous way lateral solidification (SLS) laser annealing is handled,, that is must beyond glass, just begin irradiation because the sweep speed (scan rate) of SLS laser board up to 30mm/sec, therefore must have a segment distance to do acceleration.
Be the problem of avoiding fringe region A to be damaged because of laser, existing wire harness laser (line beamlaser) all is from amorphous silicon membrane 14 evenly, and promptly main region C begins irradiation.And because continous way lateral solidification (SLS) laser annealing processing must just begin irradiation beyond glass, therefore shutter (shutter) opening point of controlling laser radiation in the board is located at thin film deposition and evenly locates, impaired with the amorphous silicon membrane 14 of avoiding being positioned at substrate edge region A.As shown in Figure 1, setting shutter opening point is D and E, but shutter complete opening point is d and e, so it is inhomogeneous to have the suffered laser energy of the amorphous silicon membrane 14 of a section, has reduced the zone that can be used to make panel on the contrary.
Summary of the invention
In view of this, the object of the present invention is to provide a kind ofly to can be used to make under the region area of panel can not influencing, can solve the laser anneal device that the amorphous silicon layer of substrate edge region suffers damage through laser annealing the time.
For reaching above-mentioned purpose, the present invention proposes a kind of laser anneal device in order to the preparation polycrystalline silicon membrane, this kind laser anneal device comprises a masking structure, when the amorphous layer rete being carried out laser annealing with the formation polycrystalline silicon membrane, masking structure can be kept out the laser of substrate edge region, shines the amorphous silicon film layer of substrate edge region fully to avoid laser.Therefore, the laser beam that corresponds to substrate edge region can the crested structure block or partial penetration fully.
Description of drawings
Fig. 1 is the schematic diagram of the tradition amorphous silicon layer that deposition forms on the resilient coating of glass substrate.
Fig. 2 is used for the schematic diagram of the laser anneal device of continous way lateral solidification method (SLS) for the present invention.
Fig. 3 is the enlarged drawing of the operation reative cell among Fig. 2, and wherein masking structure is made up of supporting construction, whirligig and baffle plate.
Fig. 4 is the plane graph of an embodiment of the masking structure of Fig. 3.
Fig. 5 is the plane graph of another embodiment of the masking structure of Fig. 3.
Fig. 6 can be convenient to the schematic diagram of the position that substrate passes in and out for baffle plate rotates to.
Fig. 7 is the structural representation of a kind of operation reative cell of another preferred embodiment of the present invention, and wherein masking structure is made up of baffle plate and retractor device.
Fig. 8 can be convenient to the schematic diagram of the position that substrate passes in and out for baffle plate is contracted to.
The figure number explanation
Glass substrate: 10 resilient coatings: 12
Amorphous silicon layer: 14,17 fringe regions: A
Main region: C shutter opening point: D, E
Shutter complete opening point: d, e
Laser: 22 lasing light emitters: 10
Attenuator: 11 beam homogenizers: 12
Cycloscope: 13 cover curtains: 14
Object lens: 15 preface reative cells: 20
Shift platform: 16 substrates: 18
Masking structure: 21 19-1,19-2,19-3: speculum
Supporting construction: 21b whirligig: 21c
Baffle plate: 21a supporting bracket: 21b
1
Bracing frame: 21b
2Retractor device: 21d
Embodiment
For fear of the laser of the high sweep speed of high-energy the amorphous silicon film layer of fringe region is caused damage, therefore, the invention provides a kind of laser anneal device of improvement, arrive the amorphous silicon film layer of substrate edge region, and the thin amorphous silicon film layer in this zone is damaged to avoid laser radiation.
When made amorphous silicon film again during crystallization by continous way lateral solidification method (SLS), laser beam can be defined out earlier predetermined shape, and the irradiation that amorphous silicon film is continued with this laser.Fig. 2 is for being used for the laser anneal device of continous way lateral solidification method (SLS).
For crystalizing amorphous silicon film again, undefined initial laser 22 can be come out in self-excitation light source 10 radiation, and can pass through attenuator (attenuator) 11, beam homogenizer (homogenizer) 12 and cycloscope (field lens), aggregation laser bundle 22 and control the energy of laser beam 22 thus.
Next, laser beam 22 can be by defining predetermined shape by cover curtain (mask) 14.After the laser beam after the definition 22 passes through object lens (object lens) 15, laser beam 22 can be radiated at the amorphous silicon film 17 that shifts the substrate 18 on the platform 16 in the operation reative cell 20, make it convert polysilicon film to, laser corresponding to substrate 18 fringe regions can crested structure 21 block, or through masking structure 21 this regional laser beam is partly penetrated.Number in the figure 19-1,19-2,19-3 digital reflex mirror are in order to the path of control laser beam 22.
The structure of the operation reative cell among Fig. 2 is a preferred embodiment of the present invention, and Fig. 3 is the enlarged drawing of partial structure for this reason.
Fig. 7 is the structural representation of a kind of operation reative cell of another preferred embodiment of the present invention, masking structure 21 for example is made up of baffle plate 21a and retractor device 21d, retractor device 21d for example is fixed in operation reative cell wall, in order to support retractor device 21d and baffle plate 21a, and baffle plate 21a can be by the position of retractor device 21d control baffle plate 21a, and Fig. 8 can be convenient to the schematic diagram of the position that substrate 18 passes in and out for baffle plate 21a is contracted to.
The material of above-mentioned baffle plate 21a selects to reflect or to absorb the material of laser beam, so that laser beam can be blocked fully or part penetrates, its material for example is metal material (as chromium, aluminium, a silver etc.).
The present invention makes laser beam can not shine directly into the amorphous silicon layer of substrate edge region place thinner thickness by the improvement laser anneal device, makes the amorphous silicon layer of fringe region impaired to avoid high-octane laser radiation meeting.
The present invention is by the design of baffle plate, makes the high-octane laser radiation of high sweep speed can avoid direct irradiation to fringe region, therefore can not reduce the zone that can be used to make panel.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; anyly have the knack of this skill person; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking accompanying the claim person of defining.
Claims (10)
1. the laser anneal device in order to the preparation polycrystalline silicon membrane is characterized in that, comprises at least:
One shifts platform, in order to place a substrate; And
One masking structure is in order to the edge zone of protection corresponding to this substrate.
2. the laser anneal device in order to the preparation polycrystalline silicon membrane as claimed in claim 1 is characterized in that this masking structure comprises:
One baffle plate; And
One supporting construction is fixed on this transfer platform, in order to support this baffle plate.
3. the laser anneal device in order to the preparation polycrystalline silicon membrane as claimed in claim 2 is characterized in that this masking structure more comprises: a whirligig in order to fixing this baffle plate on this supporting construction, and makes this baffle plate can do rotary moving.
4. the laser anneal device in order to the preparation polycrystalline silicon membrane as claimed in claim 2 is characterized in that this supporting construction is a supporting bracket or a bracing frame.
5. the laser anneal device in order to the preparation polycrystalline silicon membrane as claimed in claim 1 is characterized in that this masking structure comprises:
One baffle plate; And
One retractor device in order to supporting this baffle plate, and makes this baffle plate can do telescopic moving.
6. the laser anneal device in order to the preparation polycrystalline silicon membrane as claimed in claim 5 is characterized in that this retractor device is fixed in the wall of an operation reative cell.
7. the laser anneal device in order to the preparation polycrystalline silicon membrane as claimed in claim 1 is characterized in that having an amorphous silicon film layer on this substrate, and this amorphous silicon film layer is carried out a laser annealing by this laser anneal device, to transfer a polycrystalline silicon membrane to.
8. a method of utilizing laser crystallization to form polycrystalline silicon membrane is characterized in that, comprising:
Provide a substrate, and this substrate has an amorphous silicon film layer, this substrate is positioned over one in the operation reative cell shifts on the platform, wherein this operation reative cell comprises that more a masking structure is in order to the edge zone of protection corresponding to this substrate;
Adjust this masking structure, make this masking structure cover this fringe region corresponding to this substrate; And
This amorphous silicon film layer on this substrate is carried out laser annealing, to transfer a polycrystalline silicon membrane to.
9. the method for utilizing laser crystallization to form polycrystalline silicon membrane as claimed in claim 8 is characterized in that, carries out the method for laser annealing and anneals for using high sweep speed and high-octane laser.
10. the method for utilizing laser crystallization to form polycrystalline silicon membrane as claimed in claim 8 is characterized in that, the method for carrying out laser annealing is for using continous way lateral solidification method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100004329A CN1322563C (en) | 2004-01-18 | 2004-01-18 | Laser annealing device for preparing polycrystal system membrance layer and method for forming polycrystal system membrance layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100004329A CN1322563C (en) | 2004-01-18 | 2004-01-18 | Laser annealing device for preparing polycrystal system membrance layer and method for forming polycrystal system membrance layer |
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| Publication Number | Publication Date |
|---|---|
| CN1641844A CN1641844A (en) | 2005-07-20 |
| CN1322563C true CN1322563C (en) | 2007-06-20 |
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| CNB2004100004329A Expired - Fee Related CN1322563C (en) | 2004-01-18 | 2004-01-18 | Laser annealing device for preparing polycrystal system membrance layer and method for forming polycrystal system membrance layer |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7754518B2 (en) * | 2008-02-15 | 2010-07-13 | Applied Materials, Inc. | Millisecond annealing (DSA) edge protection |
| CN103915318A (en) | 2014-03-17 | 2014-07-09 | 京东方科技集团股份有限公司 | Laser annealing device, polycrystalline silicon thin film and manufacturing method thereof |
| CN103871854A (en) * | 2014-03-24 | 2014-06-18 | 上海华力微电子有限公司 | Laser annealing equipment |
| CN109950144B (en) * | 2019-04-08 | 2021-10-22 | 京东方科技集团股份有限公司 | Laser annealing equipment |
| CN112670206A (en) * | 2020-12-21 | 2021-04-16 | 上海华力集成电路制造有限公司 | Laser annealing equipment for improving wafer fragment and application method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05304106A (en) * | 1992-04-28 | 1993-11-16 | Sony Corp | Excimer laser annealer |
| JP2000135578A (en) * | 1998-10-27 | 2000-05-16 | Sumitomo Heavy Ind Ltd | Laser radiating device |
| US6071796A (en) * | 1998-10-30 | 2000-06-06 | Sharp Laboratories Of America, Inc. | Method of controlling oxygen incorporation during crystallization of silicon film by excimer laser anneal in air ambient |
-
2004
- 2004-01-18 CN CNB2004100004329A patent/CN1322563C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05304106A (en) * | 1992-04-28 | 1993-11-16 | Sony Corp | Excimer laser annealer |
| JP2000135578A (en) * | 1998-10-27 | 2000-05-16 | Sumitomo Heavy Ind Ltd | Laser radiating device |
| US6071796A (en) * | 1998-10-30 | 2000-06-06 | Sharp Laboratories Of America, Inc. | Method of controlling oxygen incorporation during crystallization of silicon film by excimer laser anneal in air ambient |
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| CN1641844A (en) | 2005-07-20 |
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