CN103871854A - Laser annealing equipment - Google Patents
Laser annealing equipment Download PDFInfo
- Publication number
- CN103871854A CN103871854A CN201410109711.2A CN201410109711A CN103871854A CN 103871854 A CN103871854 A CN 103871854A CN 201410109711 A CN201410109711 A CN 201410109711A CN 103871854 A CN103871854 A CN 103871854A
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- China
- Prior art keywords
- semiconductor substrate
- edge
- energy
- laser annealing
- protective cover
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Abstract
The invention provides laser annealing equipment used for annealing a semiconductor substrate. The laser annealing equipment comprises a protective cover, wherein the protective cover is arranged at the edge of the semiconductor substrate and is used for protecting the edge of the substrate. The laser annealing equipment enables the energy of a laser beam to be output stably, avoids the energy peak of the edge of the semiconductor substrate, and improves the yield of the edge of the semiconductor substrate.
Description
Technical field
The present invention relates to technical field of semiconductors, relate in particular to a kind of laser annealing apparatus.
Background technology
Laser annealing (Laser Annealing) is to utilize the laser beam that has certain energy (Power), scans fast, thereby reach the effect that in Semiconductor substrate, a certain micro-subregional Microsecond grade is annealed at semiconductor substrate surface.
In the time carrying out laser scanning, it is all generally arc scan, please refer to the scanning theory schematic diagram of the laser annealing apparatus of the art of the prior art shown in Fig. 1, laser beam 100 is along the surface of the inswept Semiconductor substrate 200 of arcuate directions, this scan mode is verified and is more conducive to a certain micro-subregional heat radiation in Semiconductor substrate 200, thereby reduces the warpage rate of Semiconductor substrate 200.
As Fig. 1, the heat of the mid portion of Semiconductor substrate 200 can dispel the heat to the fringe region of Semiconductor substrate 200, but the situation of Semiconductor substrate 200 fringe regions is with regard to more complicated.On the one hand, the edge of Semiconductor substrate 200 has lacked radiating surface, causes heat radiation difficulty, and annealing time in a disguised form extends, and has increased heat budget; On the other hand, there are some potential defects at Semiconductor substrate 200 edges, after excited by thermal stress, easily break from fault location generation Semiconductor substrate 200.
For the problems referred to above, the solution of prior art, the energy of adjustment laser beam.Particularly, please refer to the laser energy curve synoptic diagram of the laser annealing apparatus of the prior art shown in Fig. 2, be the central point of Semiconductor substrate 200 in conjunction with A point in Fig. 1 and Fig. 2, abscissa represents the radial direction of Semiconductor substrate 200, and ordinate represents along the laser energy of the radial direction of Semiconductor substrate 200.
Shown in Fig. 1 and Fig. 2, before laser beam 100 enters Semiconductor substrate 200, laser beam 100 energy are reduced in advance, wait after the edge a period of time that enters Semiconductor substrate 200, then the energy that improves laser beam 100 is to normal operation energy; Before laser beam 100 is about to leave Semiconductor substrate 200, reduces in advance the energy of laser beam 100, then keep the energy of laser beam 100 to leave the edge of Semiconductor substrate 200 to this laser beam 100.
Prior art reduces in advance the energy of laser beam near semiconductor substrate edge, can effectively weaken the heat accumulation effect of semiconductor substrate edge, has reduced the risk of fragmentation.But laser system is not perfectly in energy control, in the time of power conversion, has the appearance of an energy spikes (Power Spike).That is to say, scanning each time all can be accompanied by the generation of two energy spikes.At semiconductor substrate edge place, the yield of Semiconductor substrate can be greatly affected.
Therefore, be necessary existing laser annealing apparatus to improve, to improve the yield of semiconductor substrate edge.
Summary of the invention
The problem that the present invention solves provides a kind of laser annealing apparatus, and the energy of laser beam can steadily be exported, and avoids the appearance of the energy spikes of semiconductor substrate edge, improves the yield at the edge of Semiconductor substrate.
For addressing the above problem, the invention provides a kind of laser annealing apparatus, for Semiconductor substrate is annealed, comprising: protective cover, be arranged on the edge of Semiconductor substrate, described protective cover is for the protection of edges of substrate.
Alternatively, described Semiconductor substrate be shaped as circle, described protective cover be shaped as annular.
Alternatively, described protective cover is around the edge setting of described substrate.
Compared with prior art, the present invention has the following advantages:
The present invention is by install protective cover additional on laser annealing machine, thereby the energy of laser beam can steadily be exported, and avoids the appearance of the energy spikes of semiconductor substrate edge, improves the yield at the edge of Semiconductor substrate.
Accompanying drawing explanation
Fig. 1 is the scanning theory schematic diagram of the laser annealing apparatus of prior art;
Fig. 2 is the laser energy curve synoptic diagram of the laser annealing apparatus of prior art.
Fig. 3 is the laser energy curve synoptic diagram of the laser annealing apparatus of one embodiment of the invention.
Embodiment
From background technology, prior art reduces in advance the energy of laser beam near semiconductor substrate edge, can effectively weaken the heat accumulation effect of semiconductor substrate edge, has reduced the risk of fragmentation.But laser system is not perfectly in energy control, in the time of power conversion, has the appearance of an energy spikes (Power Spike).That is to say, scanning each time all can be accompanied by the generation of two energy spikes.At semiconductor substrate edge place, the yield of Semiconductor substrate can be greatly affected.
In order to address the above problem, the invention provides a kind of laser annealing apparatus, the energy of laser beam can steadily be exported, avoid the appearance of the energy spikes of semiconductor substrate edge, improve the yield at the edge of Semiconductor substrate.Laser annealing apparatus provided by the invention, comprising: protective cover, be arranged on the edge of Semiconductor substrate, and described protective cover is for the protection of edges of substrate.In an embodiment of the present invention, described protective cover arranges around the edge of described substrate for one week.Described protective cover is positioned at edges of substrate, and around the above and below, edge of described substrate, edges of substrate is covered in this protective cover.As an embodiment, the material of described protective cover is special cermacis.
As an embodiment, described Semiconductor substrate be shaped as circle, described protective cover be shaped as annular.
Owing to being provided with protective cover, the energy of laser beam can steadily be exported, and please refer to the laser energy curve synoptic diagram of the laser annealing apparatus of the one embodiment of the invention shown in Fig. 3.The center that wherein the initial point A of reference axis is Semiconductor substrate, what abscissa represented is the size of the radial direction of Semiconductor substrate, what ordinate represented is the energy of the laser beam of the radial direction of speech Semiconductor substrate.As seen from Figure 3, the laser annealing apparatus that has installed laser beam additional is steady at the laser beam energy at the edge of substrate, and the Energy distribution in whole Semiconductor substrate is comparatively steady, and noenergy spike occurs.
To sum up, the present invention is by install protective cover additional on laser annealing machine, thereby the energy of laser beam can steadily be exported, and avoids the appearance of the energy spikes of semiconductor substrate edge, improves the yield at the edge of Semiconductor substrate.
Therefore, above-mentioned preferred embodiment is only explanation technical conceive of the present invention and feature, and its object is to allow person skilled in the art can understand content of the present invention and implement according to this, can not limit the scope of the invention with this.All equivalences that Spirit Essence is done according to the present invention change or modify, within all should being encompassed in protection scope of the present invention.
Claims (3)
1. a laser annealing apparatus, for Semiconductor substrate is annealed, is characterized in that, comprising: protective cover, be arranged on the edge of Semiconductor substrate, and described protective cover is for the protection of edges of substrate.
2. laser annealing apparatus as claimed in claim 1, is characterized in that, described Semiconductor substrate be shaped as circle, described protective cover be shaped as annular.
3. laser annealing apparatus as claimed in claim 1, is characterized in that, described protective cover is around the edge setting of described substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410109711.2A CN103871854A (en) | 2014-03-24 | 2014-03-24 | Laser annealing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410109711.2A CN103871854A (en) | 2014-03-24 | 2014-03-24 | Laser annealing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103871854A true CN103871854A (en) | 2014-06-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410109711.2A Pending CN103871854A (en) | 2014-03-24 | 2014-03-24 | Laser annealing equipment |
Country Status (1)
| Country | Link |
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| CN (1) | CN103871854A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108400089A (en) * | 2017-02-07 | 2018-08-14 | 中芯国际集成电路制造(上海)有限公司 | A kind of laser anneal method |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05304106A (en) * | 1992-04-28 | 1993-11-16 | Sony Corp | Excimer laser annealer |
| US6071796A (en) * | 1998-10-30 | 2000-06-06 | Sharp Laboratories Of America, Inc. | Method of controlling oxygen incorporation during crystallization of silicon film by excimer laser anneal in air ambient |
| CN1604276A (en) * | 2003-09-29 | 2005-04-06 | 统宝光电股份有限公司 | Method for forming polycrystalline series film layer by utilizing laser crystallization |
| CN1641844A (en) * | 2004-01-18 | 2005-07-20 | 统宝光电股份有限公司 | Laser annealing device for preparing polycrystal system membrance layer and method for forming polycrystal system membrance layer |
| CN102157343A (en) * | 2010-11-25 | 2011-08-17 | 清华大学 | Laser annealing device and method using trapezoidal beam spot for scanning |
| CN102290342A (en) * | 2011-09-05 | 2011-12-21 | 清华大学 | Laser scanning annealing method adopting hexagonal beam spot |
| CN102290362A (en) * | 2011-07-22 | 2011-12-21 | 清华大学 | Method for correcting positioning error of wafer during laser processing |
-
2014
- 2014-03-24 CN CN201410109711.2A patent/CN103871854A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05304106A (en) * | 1992-04-28 | 1993-11-16 | Sony Corp | Excimer laser annealer |
| US6071796A (en) * | 1998-10-30 | 2000-06-06 | Sharp Laboratories Of America, Inc. | Method of controlling oxygen incorporation during crystallization of silicon film by excimer laser anneal in air ambient |
| CN1604276A (en) * | 2003-09-29 | 2005-04-06 | 统宝光电股份有限公司 | Method for forming polycrystalline series film layer by utilizing laser crystallization |
| CN1641844A (en) * | 2004-01-18 | 2005-07-20 | 统宝光电股份有限公司 | Laser annealing device for preparing polycrystal system membrance layer and method for forming polycrystal system membrance layer |
| CN102157343A (en) * | 2010-11-25 | 2011-08-17 | 清华大学 | Laser annealing device and method using trapezoidal beam spot for scanning |
| CN102290362A (en) * | 2011-07-22 | 2011-12-21 | 清华大学 | Method for correcting positioning error of wafer during laser processing |
| CN102290342A (en) * | 2011-09-05 | 2011-12-21 | 清华大学 | Laser scanning annealing method adopting hexagonal beam spot |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108400089A (en) * | 2017-02-07 | 2018-08-14 | 中芯国际集成电路制造(上海)有限公司 | A kind of laser anneal method |
| CN108400089B (en) * | 2017-02-07 | 2020-08-04 | 中芯国际集成电路制造(上海)有限公司 | Laser annealing method |
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Application publication date: 20140618 |