CN1319126C - Nozzle of CVD equipment for mfg of semiconductor device - Google Patents
Nozzle of CVD equipment for mfg of semiconductor device Download PDFInfo
- Publication number
- CN1319126C CN1319126C CNB031209564A CN03120956A CN1319126C CN 1319126 C CN1319126 C CN 1319126C CN B031209564 A CNB031209564 A CN B031209564A CN 03120956 A CN03120956 A CN 03120956A CN 1319126 C CN1319126 C CN 1319126C
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- CN
- China
- Prior art keywords
- hand
- hole
- shower nozzle
- base plate
- semiconductor device
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The present invention provided a shower head of a Chemical Vapor Deposition (CVD) apparatus which is provided with a body part having a plurality of the first jetting holes and the second jetting hole and a gas supply pipe connected to the body part for supplying gas into the body part. At this time, the first inlet port of the first jetting hole is smaller than the first outlet port of the first jetting hole and the second inlet port of the second jetting hole is larger than the second outlet port of the second jetting hole, wherein the second jetting holes are regularly located between the first jetting holes.
Description
The patent No. that the present invention requires on April 10th, 2002 to submit to is the rights and interests of the Korean Patent of 2002-19448, quotes this patent as a reference at this.
Technical field
The present invention relates to a kind ofly in order to make the equipment of semiconductor device, more particularly, relate to a kind of shower nozzle in order to the equipment of making semiconductor device, it can inject reative cell equably with process gas.
Background technology
In semiconductor applications, during the research and development of new material are carried out just energetically, and various large scale integrated circuits (LSI, Large-Scale Integrated circuit) also constantly develops as very lagre scale integrated circuit (VLSIC) (ULSI, Ultra Large-Scale Integrated circuit) because of the quick growth of these new materials.In other words, because be used for forming new material development widely in this field of film (as forming insulating barrier, semiconductor layer and the conductor layer of semiconductor device), therefore the large scale integrated circuit LSI as very lagre scale integrated circuit (VLSIC) ULSI etc. is arranged just now.Semiconductor device is made by deposition that repeats and formation pattern process usually.These processes are everlasting under the vacuum state, finish in a reative cell technical module.
Wafer as semiconductor device utilizes the method for chemical vapour deposition (CVD) (CVD, ChemicalVapor Deposition) to handle in reative cell usually.Reacting gas sees through shower nozzle usually and injects reative cell by a feeding mechanism (not shown), so that the wafer surface that is loaded in the reative cell is handled.
Along with wafer size becomes big, handle wafer surface equably and also become more difficult.In order to address this problem, to handle the used gas of wafer surface and utilize shower nozzle to inject reative cell.Because shower nozzle, gas are distributed in the reative cell equably, so just can on wafer surface, carry out a uniform CVD process.
Figure 1A and 1B are a CVD reative cell and a drawing in side sectional elevation in order to shower nozzle in the CVD reative cell of making semiconductor device.In Figure 1A and 1B, a slit valve 60 is formed at the sidewall of reative cell 10, makes wafer 50 can pass in and out reative cell 10.Open as slit valve 60, wafer 50 is imported in the reative cell 10 by the external world, is loaded into then on the pedestal 40.Pedestal 40 can move up and down by a drive unit 45.One heater (not shown) is arranged at and is used for heated chip 50 in the pedestal 40.As previously mentioned, reacting gas sees through shower nozzle 70 injection reative cells 10.Shower nozzle 70 comprise a head body 70a with a plurality of hand-hole h that pass base plate 75 with one to its feed tube 70b that is connected.Handle the used gas permeation feed tube 70b input head body 70a in wafer 50 surfaces, and then see through the space on a plurality of hand-hole h injection wafers 50.At last, gas is discharged outside the reative cell 10 by a blast pipe 80.Shower nozzle 70 is connected to a radio frequency (RF, Radio Frequency) power supply (power supply source) and comes the while as a plasma electrode, and pedestal 40 is a ground connection.
Fig. 2 A and 2B are according to the drawing in side sectional elevation of the typical shower nozzle of prior art and the cross section of having amplified the base plate 75 of shower nozzle 70 especially.In Fig. 2 A, hand-hole h has the diameter D2 of the diameter D1 of an inlet I and an outlet O and inlet I less than outlet O.Therefore, hand-hole h is the funnel shaped shown in Fig. 2 A.So, when flowing gas passed through the outlet O of hand-hole h, its speed by hand-hole h can slow down, and then injected the space on the wafer 50.Because outlet O has one than the big diameter D2 of inlet I, so the distance A 1 between the two-phase neighbor entry I can be greater than the distance A 2 between the two adjacent outlet O.Therefore, if the temperature of shower nozzle 70 rises because of the heater in the pedestal 40 (not shown) or radio-frequency power supply, then the base plate 75 of shower nozzle 70 may be out of shape as Fig. 2 B.In other words, because the width difference between base plate 75 tops and the bottom part may cause the thermal deformation of base plate 75.If thermal deformation betides base plate 75, just thermal stress can accumulate in the shower nozzle 70, and the distance between shower nozzle 70 and the wafer 50 may be inconsistent.Therefore, wafer 50 can't be handled uniformly in its whole surface.In addition, because export the diameter D1 of the diameter D2 of O greater than inlet I, so its speed slows down when gas stream is crossed outlet O, so gas can't arrive the zone away from hand-hole h.Therefore, gas can't be distributed in the reative cell 10 equably.In addition, because the diameter D2 of outlet O is quite big, so can cause restriction for the effective area of borrowing tight formation hand-hole to increase the gas injection.In addition, the weight of shower nozzle 70 also can increase because of the zone of not boring hand-hole.
Summary of the invention
Therefore, the present invention is a kind of shower nozzle in order to the CVD equipment of making semiconductor device, and it can overcome one or more basically and result from the restriction or the caused problem of shortcoming of prior art.
An advantage of the present invention is for providing a kind of shower nozzle in order to the CVD equipment of making semiconductor device, first hand-hole and a plurality of second hand-hole of funnel type that dispose a plurality of funnel types therein penetrate a base plate, with the thermal deformation of avoiding this base plate and the effective area that increases the gas injection.
Another advantage of the present invention forms a plurality of hand-holes therein and penetrates a base plate for a kind of shower nozzle in order to the CVD equipment of making semiconductor device is provided, and between the inlet of this hand-hole and the outlet passage is arranged, and should inlet and the equal diameters that exports.
Other feature of the present invention and advantage will propose in ensuing description, can be easier to understand by following explanation the present invention, perhaps can learn by carrying out the present invention.Assembly of the present invention and other advantage can be understood by ensuing explanation and claim and the pointed structure of accompanying drawing and obtain.
For to reach these and other about advantage of the present invention, as exemplary and broad description, a kind of shower nozzle in order to the CVD equipment of making semiconductor device comprises a feed tube; One has the head body of a base plate, this head body is connected to this feed tube, this base plate has a plurality of first hand-hole and second hand-holes that penetrate this base plate, wherein the inlet diameter of this first hand-hole is less than the outlet diameter of this first hand-hole, the inlet diameter of this second hand-hole is greater than the outlet diameter of this second hand-hole, and wherein optional four these adjacent first hand-holes are as foursquare four summits, and then this second hand-hole is positioned at this foursquare central point.
Preferably, this first and second hand-hole is a funnel shaped.
Another kind comprises a feed tube in order to the shower nozzle of the CVD equipment of manufacturing semiconductor device; One has the head body of a base plate, this head body is connected to this feed tube, this base plate has a plurality of hand-holes that penetrate this base plate, wherein the inlet diameter of this hand-hole equals the outlet diameter of this hand-hole, and this inlet is connected to this outlet by a passage, this channel arrangement and has a diameter less than this inlet and this outlet between this inlet exports with this.
Should be appreciated that herein aforesaid general remark and ensuing detailed description are all exemplary and illustrative, it is in order to provide the present invention further to illustrate with claimed.
Description of drawings
In order to understand the invention provides further, conjunction with figs. of the present invention also illustrates embodiments of the invention in conjunction with the explanation that is used for setting forth principle of the present invention.In these accompanying drawings:
Figure 1A to 1B is a CVD reative cell and a drawing in side sectional elevation in order to the shower nozzle of making semiconductor device;
Fig. 2 A is a drawing in side sectional elevation according to the typical shower nozzle of prior art to 2B;
Fig. 3 A is a drawing in side sectional elevation according to the shower nozzle of first embodiment of the invention to 3B; And
Fig. 4 is the drawing in side sectional elevation according to the shower nozzle of second embodiment of the invention.
Embodiment
Next conjunction with figs. will describe embodiments of the invention in detail.
In the present invention, identical symbology and Figure 1A to 1B and Fig. 2 A identical assembly or function in the 2B among all figure.So omit the explanation of same components and function at this.
Fig. 3 A is a drawing in side sectional elevation according to the shower nozzle of first embodiment of the invention to 3B.In 3B, the head body 70a of a first embodiment of the invention is unlike Fig. 2 A typical head body in the 2B at Fig. 3 A, and it has two kinds of different hand-holes.Promptly be that one first hand-hole h1 and one second hand-hole h2 pass the base plate 75 of head body 70a among Figure 1A and form.The first hand-hole h1 is a funnel shaped, and the diameter D3 of its inlet I1 is less than the diameter D4 of outlet O1, and the second hand-hole h2 one falls funnel shaped, and the diameter D5 of its inlet I2 is greater than the diameter D6 of outlet O2.As shown in Figure 3A, the configuration that replaces of the first hand-hole h1 and the second hand-hole h2.That is, optional four first hand-hole h1 are as four summits of rectangle T1, and then the second hand-hole h2 must be positioned at the central point of rectangle T1.Therefore, optional four second hand-hole h2 also can form the rectangle T2 that one first hand-hole h1 is positioned at central point.Preferable situation is that the first hand-hole h1 and the second hand-hole h2 form a square respectively.Therefore, the inlet I1 of the first hand-hole h1 and and the inlet I2 of the second hand-hole h2 of the first hand-hole h1 adjacency between width A3 can equal the first hand-hole h1 outlet O1 and and the outlet O2 of the second hand-hole h2 of the first hand-hole h1 adjacency between width A4.
Therefore, even when head body 70a produces thermal expansion, base plate 75 can not be out of shape yet.In addition, the process gas that some is used for handling wafer 50 surfaces is injected into the zone on the wafer 50, because when flowing gas entered the mouth the big first hand-hole h1 of I1 by outlet O1, its speed slowed down.Remaining gas then can be injected into from wafer 50 zone far away and the zone on the wafer 50, because when flowing gas entered the mouth the little second hand-hole h2 of I2 by outlet O2, its speed can accelerate.In addition, because compared with prior art, present embodiment can form plurality purpose hand-hole in identical big small size, so can increase effective area that gas injects and the weight that can reduce shower nozzle 70.
Fig. 4 is the drawing in side sectional elevation according to the shower nozzle of second embodiment of the invention.In Fig. 4, the hand-hole h of base plate 75 has the inlet I and outlet O of same diameter size.That is, the diameter D7 of hand-hole h inlet I equals the diameter D8 of hand-hole h outlet O.Between inlet I and outlet O a passage S is arranged, its diameter is less than inlet I and outlet O.Though compared with prior art, the effective area that gas injects among second embodiment does not increase, because the width A5 between the two-phase neighbor entry I equals the width A6 between the two adjacent outlet O, so can avoid the thermal deformation of base plate 75.In addition, because compared with prior art, the area that base plate 75 does not comprise hand-hole h reduces, so can alleviate the weight of shower nozzle 70.
According to the present invention because the width between the hand-hole two-phase neighbor entry equals the width between the two adjacent outlets, so even when head body 70a when suffering thermal stress, also can avoid the thermal deformation of base plate 75.Therefore, can be on the whole surface of wafer deposit film equably.In addition, have as the shower nozzle 70 of first and second two embodiment made hand-hole of the present invention equably dispersing technology gas comprise from base plate 75 zone far away and the zone on the wafer to the entire reaction chamber.In addition,, can form more hand-hole and pass base plate 75, so can increase effective area that gas injects and the weight that alleviates shower nozzle 70 because compared with prior art.
Clearly, those skilled in the art are not in leaving spirit of the present invention and scope, when carrying out various modifications and variation to the present invention.Therefore all variations that equate with the claim meaning all should be contained among the present invention.
Claims (4)
1. shower nozzle in order to the CVD equipment of making semiconductor device is characterized in that: comprise:
One feed tube;
One has the head body of a base plate, and described head body is connected to described feed tube, and described base plate has a plurality of first hand-hole and second hand-holes that penetrate described base plate, wherein
The inlet diameter of described first hand-hole is less than the outlet diameter of described first hand-hole,
The inlet diameter of described second hand-hole is greater than the outlet diameter of described second hand-hole, and wherein optional four adjacent described first hand-holes are as foursquare four summits, and then described second hand-hole is positioned at described foursquare central point.
2. the shower nozzle in order to the CVD equipment of making semiconductor device as claimed in claim 1, it is characterized in that: the upper surface of described base plate has substantially the same effective area with the lower surface of described base plate.
3. the shower nozzle in order to the CVD equipment of making semiconductor device as claimed in claim 1, it is characterized in that: described first and second hand-hole is a funnel shaped.
4. the shower nozzle in order to the CVD equipment of making semiconductor device as claimed in claim 1, it is characterized in that: the gross area of the described inlet of described first hand-hole and described second hand-hole is substantially equal to the gross area of the described outlet of described first hand-hole and described second hand-hole.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR200219448 | 2002-04-10 | ||
| KR10-2002-0019448A KR100473429B1 (en) | 2002-04-10 | 2002-04-10 | Showerhead used in CVD apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1450598A CN1450598A (en) | 2003-10-22 |
| CN1319126C true CN1319126C (en) | 2007-05-30 |
Family
ID=28786914
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031209564A Expired - Fee Related CN1319126C (en) | 2002-04-10 | 2003-03-21 | Nozzle of CVD equipment for mfg of semiconductor device |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR100473429B1 (en) |
| CN (1) | CN1319126C (en) |
| TW (1) | TWI269818B (en) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100574569B1 (en) * | 2004-04-30 | 2006-05-03 | 주성엔지니어링(주) | Methode for depositing atomic layer and ALD system having separate jet orifice for spouting purge-gas |
| KR101016921B1 (en) | 2004-08-20 | 2011-02-28 | 주성엔지니어링(주) | Showerhead |
| KR100701512B1 (en) * | 2006-03-23 | 2007-03-29 | 주식회사 에스에프에이 | Chemical Vapor Deposition Apparatus For Flat Panel Display |
| KR100910182B1 (en) * | 2007-06-21 | 2009-07-31 | 주식회사 에스에프에이 | Chemical Vapor Deposition Apparatus For Flat Panel Display |
| US7976631B2 (en) | 2007-10-16 | 2011-07-12 | Applied Materials, Inc. | Multi-gas straight channel showerhead |
| US9493875B2 (en) | 2008-09-30 | 2016-11-15 | Eugene Technology Co., Ltd. | Shower head unit and chemical vapor deposition apparatus |
| KR100918676B1 (en) * | 2009-04-03 | 2009-09-22 | 홍인표 | Apparatus for depositing vapor on wafer |
| US20120024478A1 (en) * | 2010-07-29 | 2012-02-02 | Hermes-Epitek Corporation | Showerhead |
| KR101935881B1 (en) * | 2012-04-26 | 2019-01-08 | 주성엔지니어링(주) | Treatment apparatus for large area substrate, Gas supplying apparatus for large area substrate and Showerhead support unit |
| KR101372222B1 (en) * | 2012-07-11 | 2014-03-10 | 주식회사 테스 | Apparatus for processing a substrate |
| CN103060906B (en) * | 2013-01-14 | 2015-09-16 | 东莞市中镓半导体科技有限公司 | A kind of Square spray nozzle structure for vapor phase epitaxy of material |
| KR20210100322A (en) | 2020-02-06 | 2021-08-17 | (주) 엠엠티케이 | Shower head in cvd process |
| KR102132216B1 (en) | 2020-03-20 | 2020-08-05 | (주) 엠엠티케이 | Shower head in cvd process |
| US20220093368A1 (en) * | 2020-09-21 | 2022-03-24 | Applied Materials, Inc. | Wafer non-uniformity tweaking through localized ion enhanced plasma (iep) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09216368A (en) * | 1996-02-13 | 1997-08-19 | Seiko Epson Corp | Ink jet nozzle plate and its production |
| CN1035704C (en) * | 1993-05-10 | 1997-08-20 | 株式会社东芝 | Method and apparatus for forming film |
| JP2000252215A (en) * | 1999-02-25 | 2000-09-14 | Toshiba Corp | Cvd system |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0435029A (en) * | 1990-05-31 | 1992-02-05 | Hitachi Electron Eng Co Ltd | Shower electrode structure for plasma cvd device |
| KR100466867B1 (en) * | 1997-07-03 | 2005-04-19 | 삼성전자주식회사 | Plasma-Enhanced Chemical Vapor Deposition Equipment with Constant Deposition Rate |
| KR20000010029U (en) * | 1998-11-14 | 2000-06-15 | 김영환 | Shower Head for Semiconductor Deposition Equipment |
| KR20000019466U (en) * | 1999-04-13 | 2000-11-15 | 윤종용 | A chemical vapor deposition apparatus |
| KR20010076521A (en) * | 2000-01-26 | 2001-08-16 | 윤종용 | A chemical vapor deposition apparatus |
-
2002
- 2002-04-10 KR KR10-2002-0019448A patent/KR100473429B1/en active IP Right Grant
-
2003
- 2003-03-13 TW TW092105554A patent/TWI269818B/en not_active IP Right Cessation
- 2003-03-21 CN CNB031209564A patent/CN1319126C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1035704C (en) * | 1993-05-10 | 1997-08-20 | 株式会社东芝 | Method and apparatus for forming film |
| JPH09216368A (en) * | 1996-02-13 | 1997-08-19 | Seiko Epson Corp | Ink jet nozzle plate and its production |
| JP2000252215A (en) * | 1999-02-25 | 2000-09-14 | Toshiba Corp | Cvd system |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200304958A (en) | 2003-10-16 |
| KR100473429B1 (en) | 2005-03-08 |
| TWI269818B (en) | 2007-01-01 |
| CN1450598A (en) | 2003-10-22 |
| KR20030080687A (en) | 2003-10-17 |
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