CN111916340A - Wafer processing device - Google Patents
Wafer processing device Download PDFInfo
- Publication number
- CN111916340A CN111916340A CN202010782174.3A CN202010782174A CN111916340A CN 111916340 A CN111916340 A CN 111916340A CN 202010782174 A CN202010782174 A CN 202010782174A CN 111916340 A CN111916340 A CN 111916340A
- Authority
- CN
- China
- Prior art keywords
- wafer
- injection pipe
- boat
- axial direction
- processing chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002347 injection Methods 0.000 claims abstract description 133
- 239000007924 injection Substances 0.000 claims abstract description 133
- 235000012431 wafers Nutrition 0.000 claims abstract description 102
- 239000007921 spray Substances 0.000 claims abstract description 15
- 238000009826 distribution Methods 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims description 50
- 230000007423 decrease Effects 0.000 claims description 2
- 238000002513 implantation Methods 0.000 claims 2
- 230000000694 effects Effects 0.000 abstract description 10
- 239000007789 gas Substances 0.000 description 41
- 230000015654 memory Effects 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229940095676 wafer product Drugs 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H01L21/205—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
- H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
The present invention relates to a wafer processing apparatus. The wafer processing apparatus includes: a processing chamber having a boat accommodating wafers, the boat extending in an axial direction of the processing chamber; the injection pipe is positioned in the processing chamber and extends along the axial direction of the processing chamber, the side wall of the injection pipe is provided with a plurality of spray holes which are arranged at intervals along the axial direction of the injection pipe, and the processing gas is transmitted to the processing chamber through the spray holes; the projection of the area with the plurality of spray holes in the injection pipe along the direction vertical to the axial direction of the processing chamber at least covers the projection of the wafer boat along the direction vertical to the axial direction of the processing chamber, so that the uniformity of gas distribution in the wafer boat is improved. The invention improves the distribution uniformity of the processing gas in the wafer boat, thereby increasing the number of wafers which can be processed by the wafer boat at the same time, improving the productivity of the machine table and improving the wafer processing effect.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a wafer processing device.
Background
With the development of the planar flash memory, the manufacturing process of the semiconductor has been greatly improved. In recent years, however, the development of planar flash memories has met with various challenges: physical limits, existing development technology limits, and storage electron density limits, among others. In this context, to solve the difficulties encountered by flat flash memories and to pursue lower production costs of unit memory cells, various three-dimensional (3D) flash memory structures, such as 3D NOR (3D NOR) flash memory and 3D NAND (3D NAND) flash memory, have come into force.
A 3D NAND memory is a memory formed by a stacking technique from two dimensions to three dimensions. With the aging of the integrated circuit production process, the 3D NAND memory has higher and higher requirements on the cost and the process performance of the production process of each layer, especially the requirements on the process technology thereof. In the process of manufacturing the 3D NAND memory, not only a high-quality CMOS gate and a channel functional layer structure with a better coverage performance need to be grown, but also the productivity of each machine needs to be fully utilized, so that the production cost is minimized on the basis of ensuring the quality.
However, currently, due to the limitation of the structure of the machine, the processing efficiency of the wafer is not high, so that the productivity of the machine is reduced, and the production cost of semiconductor products such as 3D NAND memory is indirectly increased.
Disclosure of Invention
The invention provides a wafer processing device, which is used for solving the problems of low efficiency and poor processing effect of the conventional wafer processing device in the process of processing wafers.
In order to solve the above problems, the present invention provides a wafer processing apparatus, comprising:
a processing chamber having a boat accommodating wafers, the boat extending in an axial direction of the processing chamber;
the injection pipe is positioned in the processing chamber and extends along the axial direction of the processing chamber, the side wall of the injection pipe is provided with a plurality of spray holes which are arranged at intervals along the axial direction of the injection pipe, and the processing gas is transmitted to the processing chamber through the spray holes;
the projection of the area with the plurality of spray holes in the injection pipe along the direction vertical to the axial direction of the processing chamber at least covers the projection of the wafer boat along the direction vertical to the axial direction of the processing chamber, so that the uniformity of gas distribution in the wafer boat is improved.
Optionally, the injection pipe is a straight pipe, and the injection pipe extends from the bottom of the processing chamber to the top of the processing chamber.
Optionally, the plurality of injection holes are arranged at equal intervals along the axial direction of the injection pipe.
Optionally, the apertures of the plurality of injection holes on the injection pipe gradually increase in a direction from the bottom of the processing chamber to the top of the processing chamber.
Optionally, the interval between adjacent injection holes on the injection pipe is gradually reduced in a direction from the bottom of the processing chamber to the top of the processing chamber.
Optionally, the apertures of all the spray holes on the injection pipe are the same; alternatively, the first and second electrodes may be,
the aperture of the plurality of injection holes on the injection pipe gradually increases in a direction pointing to the top of the process chamber along the bottom of the process chamber.
Optionally, the wafer boat is internally provided with a plurality of wafer slots for bearing wafers and arranged along the axial direction of the wafer boat;
one wafer groove at least corresponds to the position of one jet hole on the injection pipe.
Optionally, the number of the injection pipes is multiple, and the multiple injection pipes are symmetrically distributed around the boat.
Optionally, the device further comprises an inner shell and an outer shell, wherein the inner shell is nested inside the outer shell, and the inner shell surrounds and forms the processing chamber;
the injection pipe is disposed on an inner surface of the inner casing facing the process chamber.
Optionally, the gas exhaust device further comprises a gas exhaust port arranged at the top of the processing chamber, and the gas exhaust port is communicated with a channel between the inner shell and the outer shell and used for exhausting redundant gas in the processing chamber.
According to the wafer processing device provided by the invention, the injection pipe is arranged in the processing chamber and extends along the axial direction of the processing chamber, and the projection of the area with the plurality of spray holes on the injection pipe along the direction vertical to the axial direction of the processing chamber at least covers the projection of the wafer boat along the direction vertical to the axial direction of the processing chamber, so that in the process of transmitting the processing gas to the inside of the processing chamber through the injection pipe, the processing gas can reach the plurality of areas comprising the top and the bottom of the wafer boat through the spray holes, the uniformity of the distribution of the processing gas in the wafer boat is improved, the number of wafers which can be processed by the wafer boat at the same time is increased, the capacity of a machine table is improved, and the production efficiency of semiconductor devices is reduced. Meanwhile, the distribution uniformity of the processing gas in the wafer boat is improved, which is beneficial to improving the processing effect of the gas on the wafer, thereby correspondingly improving the quality of the wafer product.
Drawings
FIG. 1 is a schematic diagram of a wafer processing apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic view of a first configuration of an injection tube according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a second configuration of an injection tube in accordance with an embodiment of the present invention;
FIG. 4 is a schematic view of a third construction of an injection tube according to an embodiment of the present invention.
Detailed Description
The following describes in detail a specific embodiment of a wafer processing apparatus according to the present invention with reference to the accompanying drawings.
In order to protect the semiconductor device on the surface of the wafer from external damage, a film structure such as a barrier layer is usually formed on the surface of the wafer to block the external environment. The current process of forming a film structure such as a barrier layer on a wafer surface is usually performed in a reaction chamber having a wafer boat. Since the current pipeline for delivering the processing gas is located at and only at the bottom of the reaction chamber, the concentration of the processing gas at the bottom of the reaction chamber is higher, and the concentration of the processing gas at the top of the reaction chamber is lower, which finally results in poor processing of the wafers located at the upper part of the wafer boat. Therefore, in order to ensure the processing quality, the wafers can be usually placed only in a partial area of the boat, for example, for a boat with 144 wafer slots, only 75 to 100 wafers can be placed at most in order to ensure the processing quality, so that a large area of the boat is left vacant, and the throughput of the machine is reduced.
In order to increase the throughput of the wafer processing apparatus and improve the processing effect of the wafer processing apparatus, the present embodiment provides a wafer processing apparatus. Fig. 1 is a schematic structural diagram of a wafer processing apparatus according to an embodiment of the present invention, fig. 2 is a schematic structural diagram of an injector according to an embodiment of the present invention, fig. 3 is a schematic structural diagram of an injector according to a second embodiment of the present invention, and fig. 4 is a schematic structural diagram of an injector according to a third embodiment of the present invention. As shown in fig. 1 to 4, the wafer processing apparatus according to the present embodiment includes:
a process chamber 10 having a boat 11 accommodating wafers 12, the boat 11 extending in an axial direction of the process chamber 10;
an injection pipe 13 located in the processing chamber 10 and extending along an axial direction of the processing chamber 10, a sidewall of the injection pipe 13 having a plurality of injection holes 131 arranged at intervals along the axial direction of the injection pipe 13, and a process gas being transferred to the processing chamber 10 through the injection holes 131;
the projection of the area of the injection pipe 13 having the plurality of injection holes 131 in the direction perpendicular to the axial direction of the processing chamber 10 at least covers the projection of the boat 11 in the direction perpendicular to the axial direction of the processing chamber 10, so as to improve the uniformity of the gas distribution inside the boat 11.
Specifically, the boat 11 has a plurality of wafer slots arranged in parallel along an axial direction (e.g., a Y-axis direction in fig. 1) of the process chamber 10, and each wafer slot is used for placing one wafer 12. The injection pipe 13 extends from the outside to the inside of the processing chamber 10 from the bottom end of the processing chamber 10, and also extends in the axial direction of the processing chamber 10, that is, the extension direction of the injection pipe 13 is the same as the extension direction of the boat 11. The injection pipe 13 has a plurality of injection holes 131 arranged at intervals along an axial direction of the injection pipe 13 (i.e., a Y-axis direction in fig. 1) to transmit a process gas from the outside to the inside of the wafer boat 11 through the injection holes 131, so as to process the wafers 12 in the wafer boat 11. For example, the process gas may be NH3And the processing gas is used for forming a barrier layer containing nitrogen on the surface of the wafer 12, so that the semiconductor device structure formed on the surface of the wafer 12 is protected. The plurality of the present embodiment means two or more.
In the present embodiment, the extending height of the injection pipe 13 inside the process chamber 10 is increased, so that the projection of the area of the injection pipe 13 having the plurality of injection holes 131 in the direction perpendicular to the axial direction of the process chamber 10 (for example, the X-axis direction in fig. 1) at least covers the projection of the boat 11 in the direction perpendicular to the axial direction of the process chamber 10, that is, the height of the area of the injection pipe 13 having the plurality of injection holes 131 is greater than or equal to the height of the boat 11, at least the injection hole 131 at the lowest end of the injection pipe 13 can transmit the process gas to the surface of the wafer 12 at the lowest layer of the boat 11, and at least the injection hole 131 at the highest end of the injection pipe 13 can transmit the process gas to the surface of the wafer at the highest layer of the boat, thereby improving the uniformity of the distribution of the process gas inside the boat 11, on one hand, the treatment effect of the wafer is improved, and the phenomenon that the treatment effect of different areas on the surface of the wafer is different due to uneven distribution of treatment gas is avoided; on the other hand, the number of the wafers 12 that can be processed simultaneously in the boat 11 is increased, and the throughput of the processing machine is improved.
Optionally, the injection pipe 13 is a straight pipe, and the injection pipe 13 extends from the bottom of the processing chamber 10 to the top of the processing chamber 10.
Specifically, the height of the injection pipe 13 may be equal to the height of the process chamber 10, and the injection hole 131 in the injection pipe 13 may also extend from the bottom of the injection pipe 13 to the top of the injection pipe 13.
In other embodiments, a person skilled in the art may adjust the shape of the injection pipe 13 according to actual needs, for example, the injection pipe 13 is configured as a spiral pipe surrounding the inner wall of the processing chamber 10 and extending along the axial direction of the processing chamber 10, so as to further improve the uniformity of the distribution of the processing gas at different angles and different area positions in the boat.
Alternatively, the plurality of nozzle holes 131 are arranged at equal intervals along the axial direction of the injection pipe 13.
For example, as shown in fig. 2, the injection pipe 13 has a plurality of injection holes 131, and the interval between any two adjacent injection holes 131 is equal. The apertures of all the injection holes 131 on the injection pipe 13 are equal to simplify the manufacturing process of the injection pipe 13. In this embodiment, the specific size of the aperture of the nozzle 131 may be set by those skilled in the art according to actual needs, for example, the pressure in the reaction chamber 10, the type of the processing gas, and the like, which is not limited in this embodiment. The material of the injection pipe 13 may be, but is not limited to, quartz material.
Alternatively, the apertures of the plurality of injection holes 131 on the injection pipe 13 gradually increase in a direction from the bottom of the process chamber 10 to the top of the process chamber 10.
Specifically, the injection pipe 13 has a plurality of injection holes 131, and the interval between any two adjacent injection holes 131 is equal, and the hole diameters of the plurality of injection holes 131 on the injection pipe 13 gradually increase in a direction from the bottom of the processing chamber 10 to the top of the processing chamber 10. This is because, when the process gas is transferred from the bottom to the top of the injection pipe 13, the gas pressure in the injection pipe 13 is gradually decreased, and the process gas at the top of the boat 11 can be additionally supplemented by gradually increasing the aperture of the injection holes 131 in the injection pipe 13, so as to avoid the problem of uneven distribution of the process gas in the boat 11 caused by the change of the internal pressure of the injection pipe 13, thereby further improving the wafer processing effect. The specific range of the hole diameters of the plurality of injection holes 131 on the injection pipe 13 gradually increases, and those skilled in the art can select the hole diameters according to actual needs, for example, according to the injection height of the injection pipe 13, the pressure when the processing gas is injected into the injection pipe 13, and the like.
Alternatively, the interval between the adjacent injection holes 131 on the injection pipe 13 is gradually decreased in a direction from the bottom of the process chamber 10 to the top of the process chamber 10.
Optionally, the apertures of all the injection holes 131 on the injection pipe 13 are the same; alternatively, the first and second electrodes may be,
the plurality of orifices 131 on the injection pipe 13 are gradually increased in diameter in a direction from the bottom of the process chamber 10 toward the top of the process chamber 10.
Fig. 3 is a second structural view of an injection pipe according to an embodiment of the present invention, and fig. 4 is a third structural view of an injection pipe according to an embodiment of the present invention. Specifically, in order to avoid the problem of the amount of the processing gas on the upper portion of the boat decreasing due to the gradual pressure decrease during the process of transferring the processing gas from the bottom to the top of the injection pipe 13, the density of the injection holes 131 is increased in the direction from the bottom of the processing chamber 10 to the top of the processing chamber 10 to perform additional gas compensation on the upper portion of the boat 11, thereby further improving the wafer processing effect. On the basis of increasing the distribution density of the spray holes 131, the hole diameters of the spray holes 131 on the injection pipe 13 can be made equal, as shown in fig. 3; the apertures of the plurality of injection holes 131 on the injection pipe 13 may be gradually increased in a direction from the bottom of the process chamber 10 to the top of the process chamber 10, as shown in fig. 4.
Optionally, a plurality of wafer slots for carrying the wafers 12 and arranged along the axial direction of the wafer boat 11 are arranged in the wafer boat 11;
one wafer groove corresponds to at least one spray hole 131 on the injection pipe 13.
For example, according to actual needs, a person skilled in the art may make the number of the injection holes 131 on the injection pipe 13 equal to the number of the wafer grooves, and the interval between adjacent injection holes 131 equal to the interval between adjacent wafer grooves, that is, a plurality of injection holes 131 correspond to a plurality of wafer grooves one to one. Or, the number of the injection holes 131 in the injection pipe 13 is several times of the number of the wafer grooves, so that a plurality of injection holes 131 correspond to one wafer groove, and the number of the injection holes 131 corresponding to each wafer groove is equal to that of the injection holes 131. Alternatively, the number of the injection holes 131 on the injection pipe 13 is made larger than the number of the wafer grooves, and the number of the injection holes 131 corresponding to one wafer groove increases in a direction toward the top of the process chamber 10 along the bottom of the process chamber 10.
In order to further improve the uniformity of the processing effect on different areas of the wafer surface, optionally, the number of the injection pipes 13 is multiple, and the multiple injection pipes 13 are symmetrically distributed about the boat 11.
Optionally, the wafer processing apparatus further comprises an inner shell 14 and an outer shell 15, wherein the inner shell 14 is nested inside the outer shell 15, and the inner shell 14 surrounds and forms the processing chamber 10;
the injection pipe 13 is disposed on an inner surface of the inner casing facing the process chamber.
Optionally, the wafer processing apparatus further includes an exhaust port disposed at the top of the processing chamber 10, and the exhaust port is communicated with the channel 17 between the inner shell 14 and the outer shell 15, and is used for exhausting excess gas in the processing chamber 10.
The number of the injection pipes 13 is 1 as an example. The injection pipe 13 and the channel 17 are respectively arranged on two opposite sides of the boat 11, the channel 17 is located in an interlayer area between the inner shell 14 and the outer shell 15, and a suction pump 16 is communicated with the channel 17 and used for discharging redundant gas in the reaction chamber 10 to the outside of the reaction chamber 10 through the channel 17. The direction of the arrows in fig. 1 indicates the direction of exhausting the excess gas in the processing chamber 10.
In the wafer processing apparatus provided by the present embodiment, the injection pipe is disposed inside the processing chamber and extends along the axial direction of the processing chamber, and the projection of the area with the plurality of injection holes on the injection pipe along the direction perpendicular to the axial direction of the processing chamber at least covers the projection of the boat along the direction perpendicular to the axial direction of the processing chamber, so that in the process of transmitting the processing gas to the inside of the processing chamber through the injection pipe, the processing gas can reach the plurality of areas including the top and the bottom of the boat through the injection holes, the uniformity of the distribution of the processing gas inside the boat is improved, the number of wafers simultaneously processed by the boat is increased, the machine productivity is improved, and the production efficiency of the semiconductor device is reduced. Meanwhile, the distribution uniformity of the processing gas in the wafer boat is improved, which is beneficial to improving the processing effect of the gas on the wafer, thereby correspondingly improving the quality of the wafer product.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. A wafer processing apparatus, comprising:
a processing chamber having a boat accommodating wafers, the boat extending in an axial direction of the processing chamber;
the injection pipe is positioned in the processing chamber and extends along the axial direction of the processing chamber, the side wall of the injection pipe is provided with a plurality of spray holes which are arranged at intervals along the axial direction of the injection pipe, and the processing gas is transmitted to the processing chamber through the spray holes;
the projection of the area with the plurality of spray holes in the injection pipe along the direction vertical to the axial direction of the processing chamber at least covers the projection of the wafer boat along the direction vertical to the axial direction of the processing chamber, so that the uniformity of gas distribution in the wafer boat is improved.
2. The wafer processing apparatus of claim 1, wherein the injector tube is a straight tube and extends from a bottom of the process chamber to a top of the process chamber.
3. The wafer processing apparatus as claimed in claim 2, wherein the plurality of injection holes are arranged at equal intervals in an axial direction of the injection pipe.
4. The wafer processing apparatus as claimed in claim 3, wherein the plurality of injection holes on the injection pipe have a gradually increasing aperture diameter in a direction from the bottom of the process chamber to the top of the process chamber.
5. The wafer processing apparatus of claim 2, wherein a spacing between adjacent ones of the orifices on the injector tube decreases in a direction along a bottom of the process chamber toward a top of the process chamber.
6. The wafer processing apparatus as claimed in claim 5, wherein the apertures of all the nozzles on the injection pipe are the same; alternatively, the first and second electrodes may be,
the aperture of the plurality of injection holes on the injection pipe gradually increases in a direction pointing to the top of the process chamber along the bottom of the process chamber.
7. The wafer processing apparatus according to claim 1, wherein the wafer boat has a plurality of wafer slots therein for carrying wafers and arranged in an axial direction of the wafer boat;
one wafer groove at least corresponds to the position of one jet hole on the injection pipe.
8. The wafer processing apparatus of claim 1, wherein the number of the implantation tubes is plural, and the plural implantation tubes are symmetrically distributed about the boat.
9. The wafer processing apparatus of claim 1, further comprising an inner shell and an outer shell, the inner shell nested inside the outer shell, the inner shell surrounding the process chamber;
the injection pipe is disposed on an inner surface of the inner casing facing the process chamber.
10. The wafer processing apparatus of claim 9, further comprising an exhaust port disposed at a top of the processing chamber, the exhaust port communicating with the passage between the inner shell and the outer shell for exhausting excess gas within the processing chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010782174.3A CN111916340B (en) | 2020-08-06 | 2020-08-06 | Wafer processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010782174.3A CN111916340B (en) | 2020-08-06 | 2020-08-06 | Wafer processing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111916340A true CN111916340A (en) | 2020-11-10 |
| CN111916340B CN111916340B (en) | 2021-09-28 |
Family
ID=73287777
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010782174.3A Active CN111916340B (en) | 2020-08-06 | 2020-08-06 | Wafer processing device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111916340B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113373522A (en) * | 2021-05-31 | 2021-09-10 | 北海惠科半导体科技有限公司 | Diffusion device and diffusion system |
| CN113621945A (en) * | 2021-07-29 | 2021-11-09 | 长江存储科技有限责任公司 | Wafer processing apparatus and method |
| WO2023138210A1 (en) * | 2022-01-24 | 2023-07-27 | 盛美半导体设备(上海)股份有限公司 | Furnace tube for thin film deposition, thin film deposition method and processing apparatus |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1771584A (en) * | 2003-04-01 | 2006-05-10 | 东京毅力科创株式会社 | Method of heat treatment and heat treatment apparatus |
| CN103646902A (en) * | 2013-11-26 | 2014-03-19 | 上海华力微电子有限公司 | Gas injection tube for optimizing semiconductor processing conditions |
| CN108690972A (en) * | 2018-08-06 | 2018-10-23 | 长江存储科技有限责任公司 | Gas injection tube and film deposition device for film deposition device |
| CN110828331A (en) * | 2018-08-09 | 2020-02-21 | Asm Ip控股有限公司 | Shaft furnace for processing substrate and liner tube used therein |
-
2020
- 2020-08-06 CN CN202010782174.3A patent/CN111916340B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1771584A (en) * | 2003-04-01 | 2006-05-10 | 东京毅力科创株式会社 | Method of heat treatment and heat treatment apparatus |
| CN103646902A (en) * | 2013-11-26 | 2014-03-19 | 上海华力微电子有限公司 | Gas injection tube for optimizing semiconductor processing conditions |
| CN108690972A (en) * | 2018-08-06 | 2018-10-23 | 长江存储科技有限责任公司 | Gas injection tube and film deposition device for film deposition device |
| CN110828331A (en) * | 2018-08-09 | 2020-02-21 | Asm Ip控股有限公司 | Shaft furnace for processing substrate and liner tube used therein |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113373522A (en) * | 2021-05-31 | 2021-09-10 | 北海惠科半导体科技有限公司 | Diffusion device and diffusion system |
| CN113621945A (en) * | 2021-07-29 | 2021-11-09 | 长江存储科技有限责任公司 | Wafer processing apparatus and method |
| CN113621945B (en) * | 2021-07-29 | 2023-09-01 | 长江存储科技有限责任公司 | Wafer processing apparatus and method |
| WO2023138210A1 (en) * | 2022-01-24 | 2023-07-27 | 盛美半导体设备(上海)股份有限公司 | Furnace tube for thin film deposition, thin film deposition method and processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111916340B (en) | 2021-09-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111916340B (en) | Wafer processing device | |
| JP6580729B2 (en) | Chemical control mechanism of wafer processing equipment | |
| US20160168704A1 (en) | Gas injectors | |
| US20070087296A1 (en) | Gas supply device and apparatus for processing a substrate | |
| US8643080B2 (en) | Three-dimensional semiconductor memory device | |
| US8967082B2 (en) | Plasma processing apparatus and gas supply device for plasma processing apparatus | |
| CN101523573B (en) | Plasma filming apparatus, and plasma filming method | |
| US10777501B2 (en) | Semiconductor device and method of manufacturing the same | |
| US20120064682A1 (en) | Methods of Manufacturing Three-Dimensional Semiconductor Memory Devices | |
| US20120280325A1 (en) | Semiconductor device and method of manufacturing the same | |
| US9945570B2 (en) | Unit and method for cooling, and apparatus and method for treating substrate | |
| US10041170B2 (en) | Dummy wafer, thin-film forming method, and method of fabricating a semiconductor device using the same | |
| US11476151B2 (en) | Vacuum chuck, substrate processing apparatus including the same and related method of manufacture | |
| US8952448B2 (en) | Three-dimensional semiconductor memory devices and methods for manufacturing same | |
| US10050053B2 (en) | Carbon and fluorine concentration of electrodes for a semiconductor device | |
| US20170022610A1 (en) | Wafer processing apparatus having gas injector | |
| US8377206B2 (en) | Apparatus and method of forming semiconductor devices | |
| US20230088313A1 (en) | System and apparatus for gas distribution | |
| CN113206074A (en) | Semiconductor device and method for manufacturing the same | |
| KR20180009853A (en) | Apparatus for treating substrate | |
| US20190280103A1 (en) | Semiconductor structure and method for manufacturing the same | |
| CN104746047A (en) | Atomic layer deposition device | |
| US11183513B1 (en) | Semiconductor device and method for fabricating the same | |
| US20220285174A1 (en) | Substrate processing apparatus including filling gas supply line and substrate processing method using the same | |
| KR102208609B1 (en) | Shower head for chemical vapor deposition and depositing apparatus using the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |