CN113621945A - Wafer processing apparatus and method - Google Patents

Wafer processing apparatus and method Download PDF

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Publication number
CN113621945A
CN113621945A CN202110861416.2A CN202110861416A CN113621945A CN 113621945 A CN113621945 A CN 113621945A CN 202110861416 A CN202110861416 A CN 202110861416A CN 113621945 A CN113621945 A CN 113621945A
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wafer
processing chamber
exhaust port
inlet pipe
gas
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CN202110861416.2A
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CN113621945B (en
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周静兰
雷涛
刘喜锋
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Yangtze Memory Technologies Co Ltd
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Yangtze Memory Technologies Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45568—Porous nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The invention discloses a wafer processing device and a wafer processing method. The wafer processing apparatus includes: a processing chamber for receiving a wafer; the first air inlet pipe is provided with at least one first air hole for transmitting carrier gas to the processing chamber; the second air inlet pipe is provided with at least one second air hole used for transmitting carrier gas to the processing chamber; a third gas inlet pipe provided with at least one third gas hole for delivering carrier gas to the processing chamber; the first air holes, the second air holes and the third air holes are arranged at intervals in the height direction of the processing chamber. The invention can effectively improve the load effect of the wafer and improve the performance of the wafer.

Description

Wafer processing apparatus and method
Technical Field
The present invention relates to the field of semiconductor technology, and in particular, to a wafer processing apparatus and method.
Background
Dummy wafers (dummy wafers) are also placed on the top and bottom of the wafer boat when a furnace tube is used to deposit an ONO (silicon oxide-silicon nitride-silicon oxide) structure on the wafers of the wafer boat. Due to the different structure of the dummy wafer and the plurality of wafers, the wafers adjacent to the dummy wafer may be affected, resulting in a loading effect. The prior art improves the loading effect of the adjacent wafers of the virtual wafer by improving the structure of the virtual wafer to reduce the influence on the adjacent wafers.
However, in practical applications, because only two gas inlets for transmitting carrier gas are disposed in the furnace tube, and the gas holes on the two gas inlets are respectively opposite to the top and the bottom of the wafer boat, residual gas of the reaction gas in the furnace tube after processing the wafer is easily accumulated in the middle of the wafer boat, so that the wafer in the middle of the wafer boat also has a load effect, and the method of improving the virtual wafer structure cannot improve the load effect of the wafer in the middle of the wafer boat, which results in the performance of the wafer being affected.
Disclosure of Invention
The invention provides a wafer processing device and a wafer processing method, which can effectively improve the load effect of a wafer and improve the performance of the wafer.
The invention provides a wafer processing device, comprising:
a processing chamber for receiving a wafer;
the first air inlet pipe is provided with at least one first air hole for transmitting carrier gas to the processing chamber;
the second air inlet pipe is provided with at least one second air hole used for transmitting carrier gas to the processing chamber;
a third gas inlet pipe provided with at least one third gas hole for delivering carrier gas to the processing chamber;
the first air holes, the second air holes and the third air holes are arranged at intervals in the height direction of the processing chamber.
Further preferably, the second air hole is disposed opposite to a middle portion of the wafer.
Further preferably, the first air hole is disposed opposite to a top end of the wafer, and the third air hole is disposed opposite to a bottom end of the wafer.
The wafer processing device also comprises a first shell and a second shell;
the first shell is a hollow shell to enclose the processing chamber, a first exhaust port is arranged on the first shell, and the first exhaust port is communicated with the processing chamber;
the second shell is a hollow shell to contain the first shell, a second exhaust port is formed in the second shell, and the second exhaust port is communicated with the first exhaust port.
Further preferably, the first exhaust port extends along a bottom to a top of a side surface of the first housing, and the second exhaust port is located at a bottom of a side surface of the second housing.
Further preferably, the wafer processing apparatus further comprises a baffle plate;
the baffle covers on the first exhaust port, just the baffle with the middle part of wafer is relative.
Further preferably, the wafer processing apparatus further includes a third housing;
the third shell is a hollow shell, the third shell accommodates the first shell, and the second shell accommodates the third shell;
and the third shell is provided with a third exhaust port, and the third exhaust port is communicated with the first exhaust port and the second exhaust port.
Further preferably, the third exhaust port extends along a bottom to a top of a side surface of the third housing.
Further preferably, the first exhaust port and the third exhaust port are arranged at intervals in the circumferential direction of the third casing.
The first exhaust port and the third exhaust port are spaced apart by 130 degrees to 210 degrees in the circumferential direction of the third casing.
Further preferably, the first air inlet pipe, the second air inlet pipe, the third air inlet pipe and the first exhaust port are arranged along the circumferential interval of the first shell, and the first air inlet pipe, the second air inlet pipe, the third air inlet pipe and the first exhaust port are in the circumferential interval angle of the first shell is not smaller than 90 degrees.
Further preferably, the wafer processing apparatus further comprises at least one transfer pipe;
the transmission pipe is provided with a plurality of fourth air holes for transmitting reaction gas to the processing chamber, and the fourth air holes are arranged at intervals in the height direction of the processing chamber.
Further preferably, the first air inlet pipe, the second air inlet pipe, the third air inlet pipe and the transmission pipe are arranged at intervals along the circumferential direction of the treatment chamber, and the interval angles of the first air inlet pipe, the second air inlet pipe, the third air inlet pipe and the transmission pipe in the circumferential direction of the treatment chamber are not less than 90 degrees.
The application also provides a wafer processing method, which comprises the following steps:
placing a plurality of wafers in a processing chamber, wherein the wafers are arranged at intervals along the height direction of the processing chamber;
respectively transmitting carrier gas to a plurality of positions of the wafer in the processing chamber so as to process the wafer; the plurality of positions are arranged at intervals in a height direction of the processing chamber.
Further preferably, the plurality of locations includes a top end, a middle portion, and a bottom end of the wafer.
Further preferably, the method further comprises:
in the process of conveying the carrier gas to the processing chamber, conveying a reaction gas to the processing chamber so as to process the wafer;
and exhausting residual gas after the wafer is processed by the reaction gas out of the processing chamber through the carrier gas.
Further preferably, the method further comprises:
and exhausting the residual gas exhausted by the processing chamber through a first exhaust channel, wherein the first exhaust channel is communicated with the processing chamber, the position of the processing chamber for exhausting the residual gas is opposite to the top end and the bottom end of the wafer, and the position of the first exhaust channel for exhausting the residual gas is opposite to the bottom end of the wafer.
Further preferably, the method further comprises:
and discharging residual gas discharged from the processing chamber through a second exhaust channel and a third exhaust channel, wherein the third exhaust channel is communicated with the processing chamber through the second exhaust channel, the position of the processing chamber for discharging the residual gas is opposite to the top end, the middle part and the bottom end of the wafer, and the positions of the second exhaust channel and the third exhaust channel for discharging the residual gas are opposite to the bottom end of the wafer.
Further preferably, the position where the processing chamber discharges the residual gas and the position where the second exhaust passage discharges the residual gas are arranged at intervals in the circumferential direction of the processing chamber.
Further preferably, the position where the process chamber discharges the residual gas and the position where the second exhaust passage discharges the residual gas are spaced apart by 130 degrees to 210 degrees in the circumferential direction of the process chamber.
The invention has the beneficial effects that: the first air inlet pipe, the second air inlet pipe and the third air inlet pipe are arranged, carrier gas is transmitted to the processing chamber through the first air hole in the first air inlet pipe, the second air hole in the second air inlet pipe and the third air hole in the third air inlet pipe, the first air hole, the second air hole and the third air hole are distributed at intervals in the height direction of the processing chamber, residual gas after reaction with the wafer at different positions in the processing chamber is discharged in time, the phenomenon that a deposited film layer in the wafer is too thick is avoided, and ESUM (device performance window) of the wafer is improved, so that the load effect of the wafer is improved, and the performance of the wafer is improved; the baffle plate is covered in the middle of the first exhaust port of the first shell, so that residual gas in the processing chamber is diffused through the top and the bottom of the first exhaust port, and the residual gas is prevented from accumulating at the wafer in the middle of the processing chamber, so that the load effect of the wafer in the middle of the processing chamber is further improved, and the performance of the wafer is improved; the third shell is arranged between the first shell and the second shell, and the third exhaust port of the third shell and the first exhaust port of the first shell are arranged in a staggered mode, so that the influence of the second exhaust port on the airflow direction of residual gas at the first exhaust port is relieved, the residual gas is prevented from accumulating at the wafer at the middle position of the processing chamber, the load effect of the wafer at the middle position of the processing chamber is further improved, and the performance of the wafer is improved.
Drawings
In order to illustrate the embodiments or the technical solutions in the prior art more clearly, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the invention, and it is obvious for a person skilled in the art that other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a wafer processing apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of an inlet pipe and a delivery pipe in a wafer processing apparatus according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of the relationship between the boat position and the ESUM according to one embodiment of the present invention;
FIG. 4 is a schematic diagram illustrating another relationship between the position of the wafer boat and the ESUM according to the embodiment of the present invention;
FIG. 5 is a schematic view of a first exhaust port and a baffle plate of a wafer processing apparatus according to an embodiment of the present invention;
FIG. 6 is a top view of a wafer processing apparatus according to an embodiment of the present invention;
FIG. 7 is a flowchart illustrating a wafer processing method according to an embodiment of the present invention;
FIG. 8 is a schematic exhaust diagram of the processing chamber and the first exhaust channel in a wafer processing method according to an embodiment of the invention;
fig. 9 is an exhaust diagram of the process chamber, the second exhaust passage and the third exhaust passage in the wafer processing method according to the embodiment of the invention.
Detailed Description
Specific structural and functional details disclosed herein are merely representative and are provided for purposes of describing example embodiments of the present invention. The present invention may, however, be embodied in many alternate forms and should not be construed as limited to only the embodiments set forth herein.
In the description of the present invention, it is to be understood that the terms "center", "lateral", "upper", "lower", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate orientations or positional relationships based on those shown in the drawings, and are used only for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified. Furthermore, the term "comprises" and any variations thereof is intended to cover non-exclusive inclusions.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used herein, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
Fig. 1 is a schematic structural diagram of a wafer processing apparatus according to an embodiment of the present invention.
As shown in fig. 1, a wafer processing apparatus according to an embodiment of the present invention includes a processing chamber 1, a boat 2, and a plurality of gas inlets 3. Wherein the boat 2 is located in the processing chamber 1, and the boat 2 extends along the height direction (i.e. axial direction) a of the processing chamber 1, preferably, the boat 2 extends from the bottom of the processing chamber 1 to the top of the processing chamber 2. The wafer boat 2 is used for placing a plurality of wafers 4, specifically, the wafer boat 2 has a plurality of wafer slots arranged in parallel along the height direction a of the processing chamber 1, and each wafer slot is placed with one wafer 4, so that the plurality of wafers 4 placed on the wafer boat 2 are arranged at intervals along the height direction a of the processing chamber 1.
Each inlet conduit 3 is located at least partially within the process chamber 1, each inlet conduit 3 being for conveying a carrier gas, such as nitrogen N2. The air inlet D1 of each air inlet pipe 3 is positioned outside the processing chamber 1, at least one air hole is arranged on each air inlet pipe 3, and the air hole on each air inlet pipe 3 is communicated with the air inlet D1 of the air inlet pipe 3 and the processing chamber 1, so that the carrier gas is transmitted to the processing chamber 1 through the air inlet D1 and the air holes of each air inlet pipe 3.
The plurality of intake pipes 3 may include three intake pipes, i.e., a first intake pipe 3a, a second intake pipe 3b, and a third intake pipe 3c, as shown in fig. 2. The air holes of the first air inlet pipe 3a are first air holes 31a, the air holes of the second air inlet pipe 3b are second air holes 31b, the air holes of the third air inlet pipe 3c are third air holes 31c, and the first air holes 31a, the second air holes 31b and the third air holes 31c are arranged at intervals in the height direction a of the processing chamber 1. The first air hole 31a, the second air hole 31b and the third air hole 31c are all used for transmitting carrier gas to the processing chamber 1 so as to discharge residual gas after reaction at different positions in the processing chamber 1 in time, ensure that the thickness of a film layer (ONO, namely silicon oxide-silicon nitride-silicon oxide) deposited on a wafer at different positions meets the requirement, and avoid the wafer load effect caused by the fact that the ESUM (device performance window) of the wafer is influenced by the overlarge thickness of the film layer on the wafer.
Preferably, the second gas hole 31b is configured to be opposite to the middle of the wafer 4, that is, the second gas hole 31b is opposite to the wafer 4 in the middle of the boat 2, and the carrier gas is transmitted to the processing chamber 1 through the second gas hole 31b, which effectively ensures that the residual gas in the middle of the boat 2 is discharged in time, thereby improving the loading effect of the wafer 4 in the middle of the boat 2. The first air holes 31a are configured to be opposite to the top end of the wafer, that is, the first air holes 31a are opposite to the wafer 4 on the top end of the boat 2, and the carrier gas is transmitted to the processing chamber 1 through the first air holes 31a, so that the residual gas at the top end of the boat 2 is effectively ensured to be discharged in time, and the load effect of the wafer 4 on the top end of the boat 2 is improved. The third gas holes 31c are disposed opposite to the bottom end of the wafer 4, that is, the third gas holes 31c are opposite to the wafer 4 at the bottom end of the boat 2, and the carrier gas is transmitted to the processing chamber 1 through the third gas holes 31c, so as to effectively ensure that the residual gas at the bottom end of the boat 2 is discharged in time, thereby improving the loading effect of the wafer 4 at the bottom end of the boat 2. The top end, the middle portion and the bottom end are relative concepts, the middle portion of the wafer 4 may refer to a region including the wafer located at the center, the top end refers to a region located above the middle portion, the bottom end refers to a region located below the middle portion, and the lengths of the top end, the middle portion and the bottom end covered in the height direction a may be the same or different.
Three air inlet pipes 3 are respectively arranged, and air holes in the three air inlet pipes 3 are respectively arranged opposite to the wafers 4 at different positions so as to transmit air flows with different sizes to different positions of the processing chamber 1 according to actual requirements. For example, according to the distribution of the residual gas in the processing chamber, the maximum gas flow transmitted by the first gas inlet pipe 3a and the minimum gas flow transmitted by the third gas inlet pipe 3c are adjusted to ensure that the residual gas at different positions in the processing chamber can be discharged in time, and the load effect of the wafer at different positions in the processing chamber 1 is effectively improved.
If only two gas inlets are provided, the carrier gas is delivered to the bottom and top of the process chamber 1, respectively. The exhaust pump is located at the bottom, so that when the exhaust pump exhausts the residual gas in the processing chamber 1, the residual gas at the top of the processing chamber 1 is diffused to the middle and the bottom of the processing chamber 1, but the bottom of the processing chamber 1 is closer to the exhaust pump, so that the residual gas at the bottom of the processing chamber 1 can be exhausted in time, and the residual gas at the middle of the processing chamber 1 is farther from the exhaust pump, so that the residual gas is accumulated at the middle of the processing chamber 1, and further, the wafer film layer at the middle of the wafer boat 2 is too thick. As can be seen from fig. 3, the ESUMs (device performance windows) of the wafers 4 at the bottom position B2 and the top position B1 of the boat 2 are high, while those of the wafers 4 at the middle position B3 of the boat 2 (e.g., the 58 th wafer pocket position, which is ordered from the wafer pocket at the bottom of the boat 2) are low. Also, as can be seen from fig. 4, the ESUMs of the wafers 4 at the bottom position C2 and the top position C1 of the boat 2 are high, while those of the wafers 4 at the middle position C3 (e.g., the 60 th wafer slot position, sorted from the wafer slot at the bottom of the boat 2) of the boat 2 are low. In which, FIGS. 3 and 4 are graphs showing the relationship between the position of the boat and the ESUM under different reaction conditions. It can be seen that the wafers 4 in the middle of the boat 2 have a lower ESUM and there is a loading effect. In order to improve the load effect of the wafer 4 at the middle position of the wafer boat 2, the three air inlet pipes are arranged, and the air holes in the three air inlet pipes are arranged at intervals along the height direction A so as to simultaneously transmit carrier gas to different positions of the processing chamber 1, discharge residual gas in the processing chamber 1 in time, improve the ESUM of the wafer 4 at the middle position of the wafer boat 2, and further ensure that the load effect of the wafer 4 is improved.
Specifically, each of the gas inlet pipes 3 may extend in the height direction a of the process chamber 1 within the process chamber 1, i.e., the extending direction of each of the gas inlet pipes 3 is the same as the extending direction of the boat 2. Preferably, each gas inlet pipe 3 extends from the bottom of the process chamber 1 to the top of the process chamber 1. When the air inlet pipe 3 is provided with a plurality of air holes, the air holes on the air inlet pipe 3 are arranged at intervals along the height direction A of the processing chamber 1. The distance between the air holes in the air inlet tube 3 in the height direction a of the processing chamber 1 may be set according to actual requirements, for example, each wafer slot of the wafer boat 2 corresponds to one air hole, so as to ensure that the carrier gas can be transmitted to the wafers 4 located at different positions of the wafer boat 2. The distance between two adjacent air holes on the air inlet pipe 3 in the height direction a of the processing chamber 1 may also be different, and is not particularly limited herein. In addition, the size of the air hole in each air inlet pipe 3 can be set according to actual requirements, for example, in the direction from the bottom of the processing chamber 1 to the top of the processing chamber 1, the aperture of the air hole in each air inlet pipe 3 is gradually increased, so as to avoid the problem of uneven distribution of the gas in the processing chamber 1 caused by the change of the internal pressure of the air inlet pipe 3. The pore diameter of the air hole in each air inlet pipe 3 may be the same, and is not particularly limited herein.
In addition, as shown in fig. 1, the wafer processing apparatus further includes at least one transfer pipe 9, the transfer pipe 9 is at least partially located in the processing chamber 1, and a gas inlet D5 of each transfer pipe 9 is located outside the processing chamber 1 to transfer a reaction gas to the processing chamber 1 through a gas inlet D5 to process the wafer in the processing chamber 1. The shape of the different transfer pipes 9 may be different. For example, the at least one transfer tube 9 includes a first transfer tube 9a, a second transfer tube 9b, a third transfer tube 9c, and a fourth transfer tube 9d, as shown in fig. 2. The first transmission pipe 9a and the second transmission pipe 9b can extend to the top of the processing chamber 1 along the bottom of the processing chamber 1 in the processing chamber 1, the side walls of the first transmission pipe 9a and the second transmission pipe 9b are respectively provided with a plurality of fourth air holes 91, and the plurality of fourth air holes 91 on the first transmission pipe 9a and the second transmission pipe 9b are arranged at intervals along the height direction A of the processing chamber 1, so that the reaction gas transmitted to the processing chamber 1 by the transmission pipes 9 is distributed at intervals in the processing chamber 1, and wafers 4 at different positions can react with the reaction gas. The distance between the plurality of fourth air holes 91 in the height direction a may be set according to actual requirements, and is not particularly limited herein. A third transfer pipe 9c and a fourth transfer pipe 9d are located at the bottom of the processing chamber 1, wherein the third transfer pipe 9c extends in the height direction a, and the fourth transfer pipe 9d extends in a direction perpendicular to the height direction a. Wherein the first transfer pipe 9a can be used for transferring ammonia NH to the process chamber 13Oxygen O2Nitrogen gas N2And hydrogen H2And a second transfer pipe 9b for transferring hexachlorodisilane HCDS, nitrogen N to the processing chamber 12Hydrogen gas H2And a third transfer pipe 9c for transferring nitrogen gas N to the processing chamber 12A fourth transfer pipe 9d for transferring nitrogen gas N to the processing chamber 12And hydrogen H2. It should be noted that the number of the delivery pipes 9 and the delivery gas can be set according to actual requirements, and are not limited specifically herein.
Further, as shown in fig. 6, the first air inlet pipe 3a, the second air inlet pipe 3B, the third air inlet pipe 3c and the transmission pipe 9 are arranged at intervals along the circumferential direction B of the processing chamber 1, and the interval angles of the first air inlet pipe 3a, the second air inlet pipe 3B, the third air inlet pipe 3c and the transmission pipe 9 in the circumferential direction B of the processing chamber 1 are not less than 90 degrees, so as to ensure that the reaction gas transmitted by the transmission pipe 9 can be fully reacted with the wafer 4 and then discharged by the carrier gas.
Further, as shown in fig. 1, the wafer processing apparatus further includes a first housing 5 and a second housing 6. The first housing 5 is a hollow housing to enclose the processing chamber 1. The first casing 5 has a first exhaust port D3 therein, and the first exhaust port D3 is in communication with the process chamber 1. As shown in conjunction with fig. 5, the first exhaust port D3 extends along the bottom of the side surface of the first casing 5 to the top of the side surface of the first casing 5. The second casing 6 is a hollow casing to accommodate the first casing 5, and the second casing 6 and the first casing 5 are arranged at an interval to form a first exhaust passage between the second casing 6 and the first casing 5. The second casing 6 has a second exhaust port D2, and the second exhaust port D2 is communicated with the first exhaust passage, the first exhaust port D3 and the processing chamber 1. As shown in fig. 1, the second exhaust port D2 is located at the bottom of the side surface of the second housing 6, as shown in fig. 1. An exhaust pump may be disposed at the second exhaust port D2, and after the reaction gas processes the wafer 4, residual gas in the process chamber 1 may be exhausted through the first exhaust port D3, the first exhaust passage, and the second exhaust port D2 by the exhaust pump.
Because the exhaust pump is located at the bottom of the second housing 6, when the exhaust pump exhausts the residual gas in the processing chamber 1, the residual gas at the top of the processing chamber 1 diffuses to the middle and the bottom of the processing chamber 1, but the bottom of the processing chamber 1 is closer to the exhaust pump, so that the residual gas at the bottom of the processing chamber 1 can be exhausted in time, and the residual gas at the middle of the processing chamber 1 is farther from the exhaust pump, so that the residual gas is accumulated at the middle of the processing chamber 1, and the load effect of the wafer 4 at the middle position of the wafer boat 2 is increased.
Based on this, alternatively, as shown in fig. 5, a baffle plate 8 is provided at the first exhaust port D3, the baffle plate 8 is located on the first exhaust port D3, and the baffle plate 8 is opposed to the middle of the wafer 4, i.e., the baffle plate 8 covers the middle position of the first exhaust port D3, to improve the flow direction of the residual gas exhausted. Because the baffle 8 is arranged in the middle of the first exhaust port D3 and the exhaust pump is located at the bottom of the second casing 6, when the exhaust pump pumps air, the residual gas is exhausted through the bottom and the top of the first exhaust port D3, and is not accumulated in the middle, that is, is not accumulated in the wafer 4 in the middle of the wafer boat 2, so as to effectively improve the load effect of the wafer 4 in the middle of the wafer boat 2 and improve the performance of the wafer 4.
Preferably, the area covered by the baffle plate 8 on the first exhaust port D3 is not more than one third of the area of the first exhaust port D3, so as to avoid the baffle plate 8 from influencing the exhaust amount of the first exhaust port D3 and ensure that residual gas can be exhausted through the first exhaust port D3 in time. For example, for the boat 2 having 119 wafer slots, the position of the shutter 8 corresponds to the position of 49 th to 69 th wafer slots (sorted from the wafer slot at the bottom of the boat 2).
Further, as shown in fig. 6, the first air inlet pipe 3a, the second air inlet pipe 3B, the third air inlet pipe 3c and the first exhaust port D3 are arranged at intervals along the circumferential direction B of the first housing 5, and the interval angle between the first air inlet pipe 3a, the second air inlet pipe 3B, the third air inlet pipe 3c and the first exhaust port D3 in the circumferential direction B of the first housing 5 is not less than 90 degrees, so that the carrier gas transmitted by the first air inlet pipe 3a, the second air inlet pipe 3B and the third air inlet pipe 3c is prevented from being directly exhausted from the first exhaust port D3, and the carrier gas cannot exhaust the residual gas.
Alternatively, as shown in fig. 6, a third casing 7 is disposed between the first casing 5 and the second casing 6, the third casing 7 is a hollow casing to accommodate the first casing 5, and the third casing 7 is disposed at a distance from the first casing 5, so that a second exhaust passage is formed between the third casing 7 and the first casing 5, and the second exhaust passage is communicated with the first exhaust port D3 and the processing chamber 1. The second casing 6 accommodates the third casing 7, and the third casing 7 is disposed at a distance from the second casing 6, so that a third exhaust passage is formed between the third casing 7 and the second casing 6, and the third exhaust passage communicates with the second exhaust port D2. The third casing 7 has a third exhaust port D4, and the third exhaust port D4 is communicated with the second exhaust passage and the third exhaust passage, so that residual gas in the processing chamber 1 can be exhausted through the first exhaust port D3, the second exhaust passage, the third exhaust port D4, the third exhaust passage and the second exhaust port D2.
The third exhaust port D4 and the first exhaust port D3 are arranged at an interval in the circumferential direction B of the third casing 7, and the angle α between the first exhaust port D3 and the third exhaust port D4 in the axial direction B of the third casing is 130 degrees to 210 degrees. Preferably, the first exhaust port D3 is angularly spaced from the third exhaust port D4 in the axial direction B of the third casing by 180 degrees. In this embodiment, the third casing 7 with the third exhaust port D3 is provided, so that the influence of the exhaust pump on the flow direction of the residual gas at the first exhaust port D3 can be alleviated, the residual gas at the first exhaust port D3 can be diffused horizontally, the residual gas can be prevented from accumulating at the wafer 4 at the middle position of the wafer boat 2, the load effect of the wafer 4 at the middle position of the wafer boat 2 can be effectively improved, and the performance of the wafer 4 can be improved.
As can be seen from the above, the wafer processing apparatus provided in the embodiment of the present invention can transmit the carrier gas to the processing chamber through the first air inlet pipe, the second air inlet pipe and the third air inlet pipe, and the first air hole on the first air inlet pipe, the second air hole on the second air inlet pipe and the third air hole on the third air inlet pipe are arranged at intervals in the height direction of the processing chamber, so as to timely discharge the residual gas after reaction with the wafer at different positions in the processing chamber, thereby avoiding the excessive thickness of the film layer deposited in the wafer, and further improving the ESUM (device performance window) of the wafer, thereby improving the load effect of the wafer and improving the performance of the wafer; the baffle plate is covered in the middle of the first exhaust port of the first shell, so that residual gas in the processing chamber is diffused through the top and the bottom of the first exhaust port, and the residual gas is prevented from accumulating at the wafer in the middle of the processing chamber, so that the load effect of the wafer in the middle of the processing chamber is further improved, and the performance of the wafer is improved; the third shell is arranged between the first shell and the second shell, and the third exhaust port of the third shell and the first exhaust port of the first shell are arranged in a staggered mode, so that the influence of the second exhaust port on the airflow direction of residual gas at the first exhaust port is relieved, the residual gas is prevented from accumulating at the wafer at the middle position of the processing chamber, the load effect of the wafer at the middle position of the processing chamber is further improved, and the performance of the wafer is improved.
Accordingly, the embodiment of the present invention further provides a wafer processing method, which can be applied to the wafer processing apparatus in the above embodiments.
Fig. 7 is a schematic flow chart illustrating a wafer processing method according to an embodiment of the invention.
As shown in fig. 7, the present embodiment provides a wafer processing method, which includes steps 101 to 102:
step 101, placing a plurality of wafers in a processing chamber, wherein the plurality of wafers are arranged at intervals along the height direction of the processing chamber.
For example, as shown in fig. 1, the first housing 5 encloses a closed space, i.e., the process chamber 1. A boat 2 is provided in the process chamber 1, the boat 2 extending in the height direction a of the process chamber 1, and preferably, the boat 2 extends from the bottom of the process chamber 1 to the top of the process chamber 1. The wafer boat 2 has a plurality of wafer pockets arranged in parallel in the height direction a of the process chamber 1. The wafers 4 are placed on wafer slots of the wafer boat 2, and one wafer 4 is placed on each wafer slot, so that the wafers 4 placed on the wafer boat 2 are arranged at intervals along the height direction a of the processing chamber 1.
102, respectively transmitting carrier gas to a plurality of positions of the wafer in the processing chamber so as to process the wafer; the plurality of positions are arranged at intervals in a height direction of the processing chamber.
For example, a plurality of gas holes are arranged in the processing chamber, and the gas holes are arranged at intervals along the height direction of the processing chamber, so that the carrier gas is transmitted to a plurality of positions of the wafer through the gas holes. Preferably, the plurality of positions of the wafer may include a top end, a middle portion, and a bottom end of the wafer, such that the plurality of air holes may be respectively opposite to the top end, the middle portion, and the bottom end of the wafer.
Preferably, as shown in fig. 2, three gas inlet pipes 3 may be disposed in the processing chamber 1, and the three gas inlet pipes 3 include a first gas inlet pipe 3a, a second gas inlet pipe 3b, and a third gas inlet pipe 3 c; the first air holes 31a of the first air inlet pipe 3a are distributed at the top end of the processing chamber 1, the second air holes 31b of the second air inlet pipe 3b are distributed at the middle part of the processing chamber 1, and the third air holes 31c of the third air inlet pipe 3c are distributed at the top end of the processing chamber 1.
As shown in fig. 1 and 2, the carrier gas, such as nitrogen, is transmitted to the bottom, middle and top of the processing chamber 1 through the inlet D1 and the gas holes of the three inlet pipes 3, and the residual gas after the reaction in the processing chamber is exhausted, so as to ensure that the load effect of the wafers 4 at various positions of the wafer boat 2 is improved.
Preferably, the method further comprises:
in the process of conveying the carrier gas to the processing chamber, conveying a reaction gas to the processing chamber so as to process the wafer;
and exhausting residual gas after the wafer is processed by the reaction gas out of the processing chamber through the carrier gas.
And respectively transmitting the reaction gas to a plurality of positions of the wafer in the processing chamber, wherein the positions are arranged at intervals in the height direction of the processing chamber. For example, a plurality of fourth gas holes are formed in the processing chamber, and the plurality of fourth gas holes are arranged at intervals along the height direction of the processing chamber, so as to transmit the reaction gas to a plurality of positions of the wafer through the plurality of fourth gas holes. Preferably, the plurality of positions of the wafer may include a top end, a middle portion, and a bottom end of the wafer, so that the plurality of fourth air holes may be respectively opposite to the top end, the middle portion, and the bottom end of the wafer.
An ONO (silicon oxide-silicon nitride-silicon oxide) structure is deposited on the wafer through reaction gas, and residual gas after reaction of the reaction gas is discharged in time through carrier gas, so that the phenomenon that the residual gas is accumulated in a processing chamber to cause the excessive thickness of a film layer deposited on the wafer is avoided, and the load effect of the wafer is improved.
Preferably, the method further comprises:
and exhausting the residual gas exhausted by the processing chamber through a first exhaust channel, wherein the first exhaust channel is communicated with the processing chamber, the position of the processing chamber for exhausting the residual gas is opposite to the top end and the bottom end of the wafer, and the position of the first exhaust channel for exhausting the residual gas is opposite to the bottom end of the wafer.
As shown in fig. 8, a first exhaust passage 100 is provided, the first exhaust passage 100 may be disposed around the process chamber 1, and the first exhaust passage 100 communicates with the process chamber 1 so as to exhaust the residual gas in the process chamber 1 to the outside through the first exhaust passage 100. The position N1 at which the process chamber 1 discharges the residual gas refers to a position at which the process chamber 1 communicates with the first exhaust path 100, and the residual gas in the process chamber 1 is discharged to the first exhaust path 100 through the position N1. The position N2 at which the first exhaust passage 100 discharges the residual gas refers to a position at which the first exhaust passage 100 communicates with the outside, and the residual gas in the first exhaust passage 100 is discharged to the outside through the position N2.
The residual gas is exhausted from the processing chamber 1 at a position N1 opposite to the top and bottom ends of the wafer 4, and the residual gas is exhausted from the first exhaust path 100 at a position N2 opposite to the bottom end of the wafer 4. An exhaust pump may be provided at position N2, i.e., opposite the bottom end of wafer 4. When the exhaust pump exhausts, the flow direction of the residual gas exhausted from the processing chamber 1 is affected by the exhaust pump, so the position N1 of the residual gas exhausted from the processing chamber 1 is opposite to the top and bottom ends of the wafer 4, the flow direction of the residual gas in the processing chamber 1 is exhausted towards the positions opposite to the top and bottom ends of the wafer 4, the residual gas is prevented from accumulating at the middle position of the processing chamber 1, the residual gas is prevented from accumulating at the wafer 4 at the middle position of the wafer boat 2, the load effect of the wafer 4 at the middle position of the wafer boat 2 is effectively improved, and the performance of the wafer 4 is improved.
Preferably, the method further comprises:
and discharging residual gas discharged from the processing chamber through a second exhaust channel and a third exhaust channel, wherein the third exhaust channel is communicated with the processing chamber through the second exhaust channel, the position of the processing chamber for discharging the residual gas is opposite to the top end, the middle part and the bottom end of the wafer, and the positions of the second exhaust channel and the third exhaust channel for discharging the residual gas are opposite to the bottom end of the wafer.
As shown in fig. 9, a second exhaust passage 200 and a third exhaust passage 300 are provided, the second exhaust passage 200 is disposed around the process chamber 1, and the second exhaust passage 200 communicates with the process chamber 1, the third exhaust passage 300 is disposed around the second exhaust passage 200, and the third exhaust passage 300 communicates with the second exhaust passage 200, so that the residual gas in the process chamber 1 is exhausted to the outside through the second exhaust passage 200 and the third exhaust passage 300.
The position M1 at which the process chamber 1 discharges the residual gas refers to a position at which the process chamber 1 communicates with the second exhaust passage 200, and the residual gas in the process chamber 1 is discharged to the second exhaust passage 200 through the position M1. The position M2 at which the second exhaust passage 200 discharges the residual gas refers to a position at which the second exhaust passage 200 communicates with the third exhaust passage 300, and the residual gas in the first exhaust passage 200 is discharged to the third exhaust passage 300 through the position M2. The position M3 at which the third exhaust passage 300 discharges the residual gas refers to a position at which the third exhaust passage 300 communicates with the outside, and the residual gas in the third exhaust passage 300 is discharged to the outside through the position M3.
The position M1 at which the process chamber 1 discharges the residual gas is opposite to the top, middle, and bottom ends of the wafer 4, and the positions M2 and M3 at which the second exhaust passage 200 and the third exhaust passage 300 discharge the residual gas are opposite to the bottom end of the wafer 4. An exhaust pump may be provided at position M3, i.e., opposite the bottom end of wafer 4. When the exhaust pump is used for pumping, the second exhaust passage 200 is arranged between the processing chamber 1 and the third exhaust passage 300, so that the gas flow direction of the residual gas exhausted from the processing chamber 1 is not influenced by the exhaust pump, i.e. the residual gas in the processing chamber 1 is horizontally diffused into the second exhaust passage 200, i.e. the position M1 of the residual gas exhausted from the processing chamber 1 is opposite to the top end, the middle part and the bottom end of the wafer 4, thereby avoiding the residual gas from accumulating at the wafer 4 at the middle position of the wafer boat 2, effectively improving the load effect of the wafer 4 at the middle position of the wafer boat 2 and improving the performance of the wafer 4.
Preferably, as shown in fig. 9, a position M1 at which the residual gas is exhausted from the processing chamber 1 and a position M2 at which the residual gas is exhausted from the second exhaust passage 200 are arranged at intervals in the circumferential direction B of the processing chamber 1. Specifically, the position M1 at which the process chamber 1 discharges the residual gas and the position M2 at which the second exhaust passage 200 discharges the residual gas are spaced apart by 130 degrees to 210 degrees in the circumferential direction of the process chamber 1. Preferably, the separation angle between the position M1 where the residual gas is exhausted from the processing chamber 1 and the position M2 where the residual gas is exhausted from the second exhaust passage 200 in the circumferential direction of the processing chamber 1 is 90 degrees.
The wafer processing method provided by the embodiment of the invention can respectively transmit carrier gas to a plurality of positions of the wafer in the processing chamber, and the positions are arranged at intervals in the height direction of the processing chamber, so that residual gas after reaction with the wafer at different positions in the processing chamber is discharged in time, the excessive thickness of a deposited film layer in the wafer is avoided, and the ESUM (device performance window) of the wafer is further improved, thereby improving the load effect of the wafer and the performance of the wafer; the position of the residual gas exhausted by the processing chamber is opposite to the top end and the bottom end of the wafer, so that the residual gas in the processing chamber is diffused out through the positions opposite to the top end and the bottom end of the wafer, and the residual gas is prevented from accumulating at the wafer at the middle position of the processing chamber, thereby further improving the load effect of the wafer at the middle position of the processing chamber and improving the performance of the wafer; the second exhaust channel is arranged to relieve the influence of the position of the third exhaust channel for exhausting the residual gas on the airflow direction of the processing chamber for exhausting the residual gas, and the residual gas is prevented from accumulating at the wafer position at the middle position of the processing chamber, so that the load effect of the wafer at the middle position of the processing chamber is further improved, and the performance of the wafer is improved.
In summary, although the present invention has been described with reference to the preferred embodiments, the above-described preferred embodiments are not intended to limit the present invention, and those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention, therefore, the scope of the present invention shall be determined by the appended claims.

Claims (20)

1. A wafer processing apparatus, comprising:
a processing chamber for receiving a wafer;
the first air inlet pipe is provided with at least one first air hole for transmitting carrier gas to the processing chamber;
the second air inlet pipe is provided with at least one second air hole used for transmitting carrier gas to the processing chamber;
a third gas inlet pipe provided with at least one third gas hole for delivering carrier gas to the processing chamber;
the first air holes, the second air holes and the third air holes are arranged at intervals in the height direction of the processing chamber.
2. The wafer processing apparatus of claim 1, wherein the second gas hole is disposed opposite to a middle portion of the wafer.
3. The wafer processing apparatus of claim 2, wherein the first air hole is disposed opposite a top end of the wafer and the third air hole is disposed opposite a bottom end of the wafer.
4. The wafer processing apparatus of claim 1, further comprising a first housing and a second housing;
the first shell is a hollow shell to enclose the processing chamber, a first exhaust port is arranged on the first shell, and the first exhaust port is communicated with the processing chamber;
the second shell is a hollow shell to contain the first shell, a second exhaust port is formed in the second shell, and the second exhaust port is communicated with the first exhaust port.
5. The wafer processing apparatus of claim 4, wherein the first exhaust port extends along a bottom to a top of a side surface of the first enclosure, and the second exhaust port is located at a bottom of a side surface of the second enclosure.
6. The wafer processing apparatus of claim 5, further comprising a baffle plate;
the baffle covers on the first exhaust port, just the baffle with the middle part of wafer is relative.
7. The wafer processing apparatus of claim 4, further comprising a third housing;
the third shell is a hollow shell, the third shell accommodates the first shell, and the second shell accommodates the third shell;
and the third shell is provided with a third exhaust port, and the third exhaust port is communicated with the first exhaust port and the second exhaust port.
8. The wafer processing apparatus of claim 7, wherein the third exhaust port extends along a bottom to a top of a side surface of the third enclosure.
9. The wafer processing apparatus of claim 7, wherein the first exhaust port and the third exhaust port are spaced apart along a circumferential direction of the third housing.
10. The wafer processing apparatus of claim 9, wherein the first exhaust port and the third exhaust port are spaced apart by 130 degrees to 210 degrees in a circumferential direction of the third housing.
11. The wafer processing apparatus as claimed in claim 7, wherein the first air inlet pipe, the second air inlet pipe, the third air inlet pipe and the first exhaust port are arranged at intervals along a circumferential direction of the first housing, and an interval angle between the first air inlet pipe, the second air inlet pipe, the third air inlet pipe and the first exhaust port in the circumferential direction of the first housing is not less than 90 degrees.
12. The wafer processing apparatus of claim 1, further comprising at least one transfer tube;
the transmission pipe is provided with a plurality of fourth air holes for transmitting reaction gas to the processing chamber, and the fourth air holes are arranged at intervals in the height direction of the processing chamber.
13. The wafer processing apparatus of claim 12, wherein the first air inlet pipe, the second air inlet pipe, the third air inlet pipe and the transmission pipe are arranged at intervals along a circumferential direction of the processing chamber, and an interval angle between the first air inlet pipe, the second air inlet pipe, the third air inlet pipe and the transmission pipe in the circumferential direction of the processing chamber is not less than 90 degrees.
14. A method of wafer processing, the method comprising:
placing a plurality of wafers in a processing chamber, wherein the wafers are arranged at intervals along the height direction of the processing chamber;
respectively transmitting carrier gas to a plurality of positions of the wafer in the processing chamber so as to process the wafer; the plurality of positions are arranged at intervals in a height direction of the processing chamber.
15. The method of claim 14, wherein the plurality of locations includes a top, middle, and bottom end of the wafer.
16. The method of claim 14, further comprising:
in the process of conveying the carrier gas to the processing chamber, conveying a reaction gas to the processing chamber so as to process the wafer;
and exhausting residual gas after the wafer is processed by the reaction gas out of the processing chamber through the carrier gas.
17. The method of claim 16, further comprising:
and exhausting the residual gas exhausted by the processing chamber through a first exhaust channel, wherein the first exhaust channel is communicated with the processing chamber, the position of the processing chamber for exhausting the residual gas is opposite to the top end and the bottom end of the wafer, and the position of the first exhaust channel for exhausting the residual gas is opposite to the bottom end of the wafer.
18. The method of claim 16, further comprising:
and discharging residual gas discharged from the processing chamber through a second exhaust channel and a third exhaust channel, wherein the third exhaust channel is communicated with the processing chamber through the second exhaust channel, the position of the processing chamber for discharging the residual gas is opposite to the top end, the middle part and the bottom end of the wafer, and the positions of the second exhaust channel and the third exhaust channel for discharging the residual gas are opposite to the bottom end of the wafer.
19. The wafer processing method as claimed in claim 18, wherein the position where the process chamber exhausts the residual gas and the position where the second exhaust passage exhausts the residual gas are arranged at intervals in a circumferential direction of the process chamber.
20. The method of claim 19, wherein the location at which the process chamber exhausts the residual gas and the location at which the second exhaust channel exhausts the residual gas are spaced 130 degrees to 210 degrees apart in a circumferential direction of the process chamber.
CN202110861416.2A 2021-07-29 2021-07-29 Wafer processing apparatus and method Active CN113621945B (en)

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JP2013026435A (en) * 2011-07-21 2013-02-04 Mitsubishi Electric Corp Heat treatment apparatus
CN104419912A (en) * 2013-09-05 2015-03-18 北京北方微电子基地设备工艺研究中心有限责任公司 Gas inlet device and reaction cavity
CN109950143A (en) * 2019-03-26 2019-06-28 长江存储科技有限责任公司 Wafer processing apparatus
CN111916340A (en) * 2020-08-06 2020-11-10 长江存储科技有限责任公司 Wafer processing device
CN113035681A (en) * 2019-12-24 2021-06-25 中微半导体设备(上海)股份有限公司 Wafer airlock device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013026435A (en) * 2011-07-21 2013-02-04 Mitsubishi Electric Corp Heat treatment apparatus
CN104419912A (en) * 2013-09-05 2015-03-18 北京北方微电子基地设备工艺研究中心有限责任公司 Gas inlet device and reaction cavity
CN109950143A (en) * 2019-03-26 2019-06-28 长江存储科技有限责任公司 Wafer processing apparatus
CN113035681A (en) * 2019-12-24 2021-06-25 中微半导体设备(上海)股份有限公司 Wafer airlock device
CN111916340A (en) * 2020-08-06 2020-11-10 长江存储科技有限责任公司 Wafer processing device

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