CN112239857A - Film preparation equipment - Google Patents

Film preparation equipment Download PDF

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Publication number
CN112239857A
CN112239857A CN201910645225.5A CN201910645225A CN112239857A CN 112239857 A CN112239857 A CN 112239857A CN 201910645225 A CN201910645225 A CN 201910645225A CN 112239857 A CN112239857 A CN 112239857A
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China
Prior art keywords
reaction chamber
injection
gas
injection ports
reaction
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Pending
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CN201910645225.5A
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Chinese (zh)
Inventor
刘满成
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Changxin Memory Technologies Inc
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Changxin Memory Technologies Inc
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Application filed by Changxin Memory Technologies Inc filed Critical Changxin Memory Technologies Inc
Priority to CN201910645225.5A priority Critical patent/CN112239857A/en
Publication of CN112239857A publication Critical patent/CN112239857A/en
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor

Abstract

The invention discloses a film preparation device, which comprises: a reaction chamber; a plurality of first injection ports for inputting a first reaction gas into the reaction chamber, the plurality of first injection ports being arranged in the reaction chamber in sequence along a vertical direction; a plurality of second injection ports for inputting a second reaction gas into the reaction chamber, the plurality of second injection ports being arranged in the reaction chamber in sequence along a vertical direction; the third injection port is used for inputting dilution gas into the reaction chamber and is arranged at the bottom end of the reaction chamber; wherein the closer the first injection ports and the second injection ports are to the bottom end of the reaction chamber, the higher the output flow rate is. The thin film preparation equipment is used for generating the thin films on a plurality of wafers, and the thicknesses of the thin films grown on the surfaces of the wafers positioned at the upper part of the reaction chamber and the wafers positioned at the bottom part of the reaction chamber tend to be consistent.

Description

Film preparation equipment
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to a film preparation device.
Background
In semiconductor manufacturing, Chemical Vapor Deposition (CVD) has been widely used as a thin film process. Atomic Layer Deposition (ALD) is one method in Chemical Vapor Deposition (CVD).
The chemical vapor deposition is carried out in a reaction chamber of the thin film preparation equipment. Firstly, the wafer is placed in a closed reaction chamber, and then reaction gas is conveyed into the film preparation equipmentThe reaction gas and the wafer are chemically reacted under a high temperature environment to deposit a film on the surface of the wafer. Taking the deposition of a silicon nitride layer as an example, dichlorosilane (SiH)2Cl2) Ammonia (NH)3) After being injected into the reaction chamber, the reaction gas can react with the wafer to form a silicon nitride layer on the surface of the wafer.
One conventional reaction chamber is a vertical strip structure, such as a furnace tube. In the reaction chamber, a plurality of wafers are sequentially arranged from bottom to top. The gas input pipe extends into the reaction chamber from the bottom of the reaction chamber upwards and extends along the vertical direction. The gas input pipe is positioned at one side of the wafer. The gas input pipe is provided with a plurality of gas inlets which are uniformly distributed along the vertical direction. The lower end of the gas input pipe is communicated with reaction gas, and the reaction gas enters the reaction chamber from the gas inlets so as to form a film on the surface of the wafer.
However, because the lengths of the reaction chamber and the gas input tube are both longer, the pressure of the reaction gas in the reaction chamber is gradually reduced from bottom to top, so that the introduction amount of the reaction gas at the upper end and the lower end of the reaction chamber is unequal, and the thickness of the film grown on the surface of the wafer at the upper end of the reaction chamber is smaller than that of the film grown on the surface of the wafer at the lower end of the reaction chamber. This may adversely affect the stability of the finally produced semiconductor device.
The above information disclosed in this background section is only for enhancement of understanding of the background of the invention and therefore it may contain information that does not constitute prior art that is already known to a person of ordinary skill in the art.
Disclosure of Invention
In this summary, concepts in a simplified form are introduced that are further described in the detailed description. This summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter.
It is a primary object of the present invention to overcome at least one of the above-mentioned drawbacks of the prior art, and to provide a thin film formation apparatus, comprising:
a reaction chamber;
a plurality of first injection ports for inputting a first reaction gas into the reaction chamber, the plurality of first injection ports being arranged in the reaction chamber in sequence along a vertical direction;
a plurality of second injection ports for inputting a second reaction gas into the reaction chamber, the plurality of second injection ports being arranged in the reaction chamber in sequence along a vertical direction;
the third injection port is used for inputting dilution gas into the reaction chamber and is arranged at the bottom end of the reaction chamber;
wherein the closer the first injection ports and the second injection ports are to the bottom end of the reaction chamber, the higher the output flow rate is.
According to one embodiment of the invention, two third injection openings are provided, two of said third injection openings being spaced apart.
According to one embodiment of the invention, the two third injection ports are oriented differently.
According to one embodiment of the invention, one of the third injection ports is directed in a vertically upward direction and the other of the third injection ports is directed in a horizontal direction.
According to an embodiment of the present invention, the first reactive gas and the second reactive gas are uniformly distributed by adjusting the flow rates of the two third injection ports, respectively.
According to an embodiment of the invention, the flow rate of the dilution gas ranges from 50 sccm/min to 800 sccm/min.
According to one embodiment of the invention, the bottom end of the reaction chamber is further provided with an opening;
the film preparation equipment also comprises a crystal boat, wherein the crystal boat comprises a base, a support extending upwards from the base and a plurality of groups of brackets which are arranged on the support and are sequentially arranged along the extending direction of the support;
the brackets can extend into the reaction chamber from the opening, and each group of brackets is used for supporting one wafer.
According to an embodiment of the present invention, the thin film formation apparatus further includes a first injection pipe vertically disposed within the reaction chamber, the plurality of first injection ports each being provided on an outer sidewall of the first injection pipe;
the bottom end of the first injection pipe is used for being communicated with a first reaction gas source.
According to an embodiment of the present invention, two of the third injection ports are respectively disposed at both sides of the first injection pipe.
According to one embodiment of the invention, the thin film preparation equipment further comprises a second injection pipe vertically arranged outside the reaction chamber, a plurality of second injection holes sequentially arranged in the vertical direction are arranged on the side wall of the second injection pipe, and the bottom end of the second injection pipe is used for being communicated with a second reaction gas source;
the side wall of the reaction chamber is also provided with a plurality of connecting holes which are sequentially arranged along the vertical direction;
the connecting holes are communicated with the second injection holes in a one-to-one correspondence mode, and the second injection holes are formed in the end, facing the reaction chamber, of each connecting hole.
According to one embodiment of the invention, the distance between two adjacent first injection openings is equal and the distance between two adjacent second injection openings is equal.
According to one embodiment of the invention, the reaction chamber is a closed-top cylindrical structure.
According to the technical scheme, the film preparation equipment has the advantages and positive effects that:
when reaction gas is injected into the reaction chamber, the third injection port injects diluent gas into the reaction chamber, the diluent gas is introduced from the bottom of the reaction chamber, and the reaction gas at the bottom of the reaction chamber is diluted, so that the concentration of the reaction gas in the whole reaction chamber tends to be consistent, and therefore, the thicknesses of the films grown on the surfaces of the wafer positioned at the upper part of the reaction chamber and the wafer positioned at the bottom of the reaction chamber tend to be consistent. Meanwhile, the film layer uniformity degree of the film on a single wafer is better.
Drawings
Various objects, features and advantages of the present invention will become more apparent from the following detailed description of preferred embodiments of the invention, when considered in conjunction with the accompanying drawings. The drawings are merely exemplary of the invention and are not necessarily drawn to scale. In the drawings, like reference characters designate the same or similar parts throughout the different views. Wherein:
FIG. 1 is a schematic perspective view of a thin film forming apparatus according to an exemplary embodiment;
FIG. 2 is a schematic half-section view of a thin film production apparatus according to an exemplary embodiment;
FIG. 3 is a schematic top view in cross section of a thin film preparation apparatus according to an exemplary embodiment;
FIG. 4 illustrates four sets of diluent gas input conditions according to an exemplary embodiment;
FIG. 5 is a graph illustrating the average thickness of a thin film as a function of the position of the thin film, according to one exemplary embodiment;
FIG. 6 illustrates film uniformity versus location of a film according to an exemplary embodiment.
Wherein the reference numerals are as follows:
1. a film preparation device; 11. a reaction chamber; 111. an inner cavity; 112. an air outlet; 113. an opening; 114. connecting holes; 115. a second injection port; 12. a wafer boat; 121. a base; 122. a support; 123. a bracket; 13. a first injection pipe; 130. a first injection hole; 131. a first injection port; 14. a third injection pipe; 141. a third injection port; 15. a second injection pipe; 151. a second injection hole; 152. a plasma generator; 2. a first reactant gas source; 3. an air pump; 4. a source of diluent gas; 5. and (5) a wafer.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their detailed description will be omitted.
Referring to fig. 1 and 2, fig. 1 and 2 disclose a thin film formation apparatus 1 according to the present embodiment. The thin film formation apparatus 1 includes a reaction chamber 11, a first injection pipe 13, a second injection pipe 15, a third injection pipe 14, and a boat 12. The wafer boat 12 is used for carrying a plurality of wafers 5 and carrying the plurality of wafers 5 into and out of the reaction chamber 11 together. The first injection pipe 13, the second injection pipe 15 and the third injection pipe 14 are all communicated with the inner cavity 111 of the reaction chamber 11. The first injection pipe 13 and the second injection pipe 15 are used to inject reaction gas into the reaction chamber 11. The third injection pipe 14 is used for injecting a diluent gas into the inner cavity 111 of the reaction chamber 11.
The reaction chamber 11 is typically made of a material that is resistant to high temperatures. The reaction chamber 11 is substantially straight. The reaction chamber 11 is vertically disposed. The reaction chamber 11 is provided with an inner cavity 111, and the wafer 5 is formed in the inner cavity 111. An opening 113 is provided at the bottom of the reaction chamber 11. The wafer boat 12 can feed a plurality of wafers 5 into the inner cavity 111 through the opening 113, and the bottom of the wafer boat 12 blocks the opening 113 after the wafer boat 12 enters the inner cavity 111. On the wafer boat 12, a plurality of wafers 5 are arranged in a vertical direction. The reaction chamber 11 may be configured as a cylinder structure with a closed top end and an unclosed bottom end, and the opening 113 is a bottom end port of the reaction chamber 11. The reaction chamber 11 may further be provided with a baffle plate (not shown) for closing the opening 113 when the boat 12 is outside the reaction chamber 11.
The reaction chamber 11 is further provided with an air outlet 112, and the air outlet 112 may be disposed near the opening 113. The gas outlet 112 may be externally connected to a gas pump 3, and the gas pump 3 is used for pumping gas out of the reaction chamber 11 to pump out the gas in the reaction chamber 11.
The first injection pipe 13 and the second injection pipe 15 are both straight pipes and are arranged vertically. The first injection pipe 13 is disposed inside the reaction chamber 11, and the second injection pipe 15 is disposed outside the reaction chamber 11. The first injection pipe 13 and the second injection pipe 15 each extend from the bottom end to the top end of the reaction chamber 11.
The first injection pipe 13 is disposed near an inner sidewall of the reaction chamber 11. A plurality of first injection holes 130 are provided on a sidewall of the first injection pipe 13. The first injection hole 130 is a through hole. The number of the first injection holes 130 may be more than 6, and the plurality of first injection holes 130 are sequentially arranged in the vertical direction. The port of the first injection hole 130 connected to the inner cavity 111 of the reaction chamber 11 is a first injection hole 131.
Referring to fig. 3, the second injection pipe 15 abuts against the outer sidewall of the reaction chamber 11. A plurality of second injection holes 151 are provided on a sidewall of the second injection pipe 15. The second injection hole 151 is a through hole. The number of the second injection holes 151 may be 6 or more, and the plurality of second injection holes 151 are sequentially arranged in a vertical direction. A plurality of connection holes 114 are formed in the sidewall of the reaction chamber 11, and the connection holes 114 are through holes. The number of the connection holes 114 coincides with the number of the second injection holes 151. The plurality of connection holes 114 are sequentially arranged in the vertical direction, the connection holes 114 are in one-to-one correspondence with the second injection holes 151, and the connection holes 114 are communicated with the corresponding second injection holes 151. The connecting hole 114 is ported to a second injection port 115 toward one end in the reaction chamber 11.
The first inlet 131 and the second inlet 115 are both directed toward the wafer boat 12. The distance between two adjacent first injection ports 131 is equal, and the distance between two adjacent second injection ports 115 is equal.
The first injection pipe 13 and the second injection pipe 15 each comprise a top end and a bottom end opposite to the top end. The ends of the top ends of the first injection pipe 13 and the second injection pipe 15 are closed. In this embodiment, the bottom ends of the first injection pipe 13 and the second injection pipe 15 are close to the bottom end of the reaction chamber 11. The bottom end of the first injection pipe 13 is externally connected with a first reaction gas source 2. The bottom end of the second injection pipe 15 is externally connected with a second reaction gas source. The first reactive gas source 2 is used for providing a first reactive gas, and the second reactive gas source is used for providing a second reactive gas. The first reactive gas source 2 may be a tank loaded with a first reactive gas, and the second reactive gas source may be a tank loaded with a second reactive gas. The first reactant gas may be a silicon-containing source gas, such as dichlorosilane (SiH)2Cl2). Second reaction gasThe body may be a nitrogen-containing source gas, such as ammonia (NH)3) The second reactant gas may also be oxygen (O)2)。
The first reactive gas in the first reactive gas source 2 flows through the first injection hole 130 and is injected into the reaction chamber 11 through the first injection hole 131. The second reactive gas in the second reactive gas source flows through the second injection hole 151 and the connection hole 114 in sequence and is injected into the reaction chamber 11 through the second injection hole 115. The first reactive gas and the second reactive gas react in a high temperature environment to form a thin film on the surface of the wafer 5.
The following will be described in more detail by taking an example of depositing a silicon nitride film on a wafer surface by an atomic layer deposition method: the bottom end of the second injection pipe 15 may be further provided with a plasma generator 152. In the plasma generator 152, nitrogen atoms in the second reactive gas, for example, ammonia (NH), can be ionized3) The ammonia gas is ionized into ammonium ions. The plasma generator 152 is connected to the second injection pipe 15, and the second reaction gas is ionized in the plasma generator 152, then is transported to the second injection pipe 15, and finally is injected into the reaction chamber 11 through the second injection port 151.
The process of depositing the silicon nitride film comprises the following steps: injecting a first reaction gas into the reaction chamber 11 through the first injection port 131, and extracting the first reaction gas from the reaction chamber after the first reaction gas deposits a silicon atomic layer on the surface of the wafer; injecting ionized second reaction gas into the reaction chamber 11 through the second injection port 151, wherein ammonium ions in the second reaction gas react with silicon atoms on the surface of the wafer to generate silicon nitride, and then extracting the second reaction gas; and alternately carrying out the two steps until the silicon nitride film on the wafer reaches the preset thickness.
In the first injection pipe 13, the gas pressure at the bottom end is greater than that at the top end, and therefore, the first injection port 131 connected to the bottom end outputs a larger flow rate of the first reaction gas than the first injection port 131 connected to the top end.
Similarly, in the second injection pipe 15, the gas pressure at the bottom end is higher than that at the top end, and therefore, the flow rate of the second reaction gas output from the second injection port 115 connected to the bottom end is higher than that of the second reaction gas output from the second injection port 115 connected to the top end.
Thus, the amount of the reaction gas introduced into the bottom of the reaction chamber 11 is greater than the amount of the reaction gas introduced into the top of the reaction chamber 11.
The third injection pipe 14 extends into the reaction chamber 11, one end of the third injection pipe 14 is communicated with the dilution gas source 4, and the end of the other end is provided with a third injection port 141. The third injection port 141 is disposed at the bottom of the inner cavity 111 of the reaction chamber 11. The dilution gas source 4 is used to provide dilution gas, and the dilution gas source 4 may be a tank loaded with dilution gas. The diluent gas is a gas that does not chemically react with the first reactive gas, the second reactive gas, and the wafer 5. The diluent gas is preferably a chemically inert gas such as nitrogen or an inert gas. The dilution gas source 4 injects a dilution gas into the reaction chamber 11 through the third injection port 141.
When the reaction gas is injected into the reaction chamber 11, the third injection port 141 injects a diluent gas into the reaction chamber 11, the diluent gas is injected from the bottom of the reaction chamber 11, and the reaction gas at the bottom of the reaction chamber 11 is diluted, so that the concentration of the reaction gas in the entire reaction chamber 11 tends to be uniform, and thus, the thicknesses of the thin films grown on the surfaces of the wafer 5 located at the upper part of the reaction chamber 11 and the wafer 5 located at the bottom of the reaction chamber 11 tend to be uniform. Meanwhile, the film layer uniformity of the film on a single wafer 5 is better.
Further, two third injection pipes 14 are provided, and the third injection ports 141 of the two third injection pipes 14 are respectively provided on both sides of the first injection pipe 13. Both third injection pipes 14 are connected to the diluent gas source 4. Like this, two third injection ports 141 all can inject diluent gas into reaction chamber 11, can make diluent gas more even in the bottom distribution of reaction chamber 11 like this to make the film coating uniformity degree on the monolithic wafer 5 better.
Further, the two third injection ports 141 are oriented differently. Thus, the two third injection ports 141 can inject the dilution gas in different directions, so that the dilution gas can be distributed more uniformly. In the present embodiment, one third injection port 141 is directed in a vertically upward direction, and the other third injection port 141 is directed in a horizontal direction. In both directions, the injected dilution gas can be mixed rapidly and homogeneously into the reaction gas. Further, the third injection port 141 in the horizontal direction injects the diluent gas away from the first injection port 131 or toward the first injection port 131.
Further, the distance between the first injection port 131 at the lowest position and the bottom end of the reaction chamber 11 ranges from 20 cm to 40cm, the distance between the vertically arranged third injection port 141 and the first injection pipe 13 ranges from 3 cm to 5cm, and the distance between the horizontally arranged third injection port 141 and the first injection pipe 13 ranges from 10 cm to 30 cm. The height of the two third injection pipes 14 in the reaction chamber 11 ranges from 3 cm to 5 cm.
Further, the flow rate of the diluent gas injected into the reaction chamber 11 ranges from 50 sccm/min to 800 sccm/min. By injecting the dilution gas at such a flow rate, the thickness of the film grown on the surface of each wafer 5 is uniform, and the thickness of the film on the surface of a single wafer 5 is more uniform.
Further, the thickness of the thin film on each wafer 5 and the thickness of the thin film layer on a single wafer 5 are made uniform by adjusting the flow rates of the dilution gas output from the two third injection ports 141, respectively.
In the present example, four sets of tests were performed, which were respectively the POR set, the Test1 set, the Test2 set, and the Test3 set, with reference to FIG. 4. In the table, NXF represents the third injection port 141 facing vertically upward, NY represents the third injection port 141 facing horizontally, the middle value represents the amount of the diluent gas introduced, and 1 part represents the amount of the diluent gas of 30 to 60 sccm.
Referring to fig. 5, the average film thickness of the thin films grown on the wafers 5 at different positions in the four sets of experiments is shown. In the graph, the vertical axis represents the average film thickness, and the horizontal axis represents the films on the wafers 5 at different positions, where TOP represents the film on the topmost wafer 5, CT represents the film on the wafer 5 located at the middle upper portion, CTR represents the film on the wafer 5 located at the middle portion, BC represents the film on the wafer 5 located at the middle lower portion, and BTM represents the film on the wafer 5 located at the bottommost portion. As can be seen from this figure, the thickness of the film tends to be uniform across the wafer 5 as the total amount of diluent gas is increased. In particular, in the Test3 group, the average thickness of the film of the wafer 5 at the top and the average thickness of the film of the wafer 5 at the bottom are the smallest.
Referring to fig. 6, the film uniformity of films grown on wafers 5 at different positions in four sets of experiments is shown. In the graph, the vertical axis represents film uniformity, and the horizontal axis represents films on wafers 5 at different positions, where TOP represents the film on the topmost wafer 5, CT represents the film on the wafer 5 located above and in the middle, CTR represents the film on the wafer 5 located in the middle, BC represents the film on the wafer 5 located below and in the middle, and BTM represents the film on the wafer 5 located at the bottommost. As can be seen from the figure, the film uniformity was better in both the Test2 and Test3 groups.
Further, the boat 12 includes a susceptor 121, a support 122, and a plurality of sets of carriers 123. The susceptor 121 may have a plate shape, such as a circular plate. The susceptor 121 may be horizontally disposed. The bracket 122 is mounted on the upper surface of the base 121. The bracket 122 extends upward from the upper surface of the base 121. A plurality of sets of the brackets 123 are sequentially arranged on the support 122 along the extending direction of the support 122, and each set of the brackets 123 can hold one wafer 5. The support 122 can extend into the reaction chamber 11 from the bottom opening 113 of the reaction chamber 11, so that all wafers 5 on the carrier 123 can enter the reaction chamber 11.
Although the present invention has been disclosed with reference to certain embodiments, numerous variations and modifications may be made to the described embodiments without departing from the scope and ambit of the present invention. It is to be understood, therefore, that this invention is not limited to the particular embodiments disclosed, but it is intended to cover modifications within the scope of the appended claims and their equivalents.

Claims (13)

1. A thin film formation apparatus, comprising:
a reaction chamber;
a plurality of first injection ports for inputting a first reaction gas into the reaction chamber, the plurality of first injection ports being arranged in the reaction chamber in sequence along a vertical direction;
a plurality of second injection ports for inputting a second reaction gas into the reaction chamber, the plurality of second injection ports being arranged in the reaction chamber in sequence along a vertical direction;
the third injection port is used for inputting dilution gas into the reaction chamber and is arranged at the bottom end of the reaction chamber;
wherein the closer the first injection ports and the second injection ports are to the bottom end of the reaction chamber, the higher the output flow rate is.
2. The apparatus according to claim 1, wherein the third injection port is provided in two, and the two third injection ports are separately provided.
3. The apparatus according to claim 2, wherein the two third injection ports are oriented differently.
4. The apparatus according to claim 3, wherein one of the third injection ports faces upward and the other of the third injection ports faces in a horizontal direction.
5. The apparatus according to claim 2, wherein the first reactive gas and the second reactive gas are uniformly distributed by adjusting flow rates of the two third injection ports, respectively.
6. The apparatus for preparing a thin film according to claim 1, wherein the flow rate of the diluent gas is in a range of 50 to 800 sccm/min.
7. The apparatus according to claim 1, wherein the diluent gas is nitrogen or an inert gas.
8. The apparatus according to claim 1, wherein the bottom end of the reaction chamber is further provided with an opening;
the film preparation equipment also comprises a crystal boat, wherein the crystal boat comprises a base, a support extending upwards from the base and a plurality of groups of brackets which are arranged on the support and are sequentially arranged along the extending direction of the support;
the brackets can extend into the reaction chamber from the opening, and each group of brackets is used for supporting one wafer.
9. The thin film formation apparatus according to claim 2, further comprising a first injection pipe vertically disposed within the reaction chamber, the plurality of first injection ports each being provided on an outer sidewall of the first injection pipe;
the bottom end of the first injection pipe is used for being communicated with a first reaction gas source.
10. The apparatus according to claim 9, wherein two of the third injection ports are respectively provided at both sides of the first injection pipe.
11. The film preparation apparatus according to claim 1, further comprising a second injection pipe vertically disposed outside the reaction chamber, wherein a plurality of second injection holes are formed in a side wall of the second injection pipe, the second injection holes are sequentially arranged in the vertical direction, and a bottom end of the second injection pipe is used for being communicated with a second reaction gas source;
the side wall of the reaction chamber is also provided with a plurality of connecting holes which are sequentially arranged along the vertical direction;
the connecting holes are communicated with the second injection holes in a one-to-one correspondence mode, and the port of one end, facing the inside of the reaction chamber, of each connecting hole is the second injection hole.
12. The apparatus according to claim 1, wherein the first injection ports are equally spaced apart from each other, and the second injection ports are equally spaced apart from each other.
13. The apparatus of claim 1, wherein the reaction chamber is a closed-top cylindrical structure.
CN201910645225.5A 2019-07-17 2019-07-17 Film preparation equipment Pending CN112239857A (en)

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CN201910645225.5A CN112239857A (en) 2019-07-17 2019-07-17 Film preparation equipment

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Application Number Priority Date Filing Date Title
CN201910645225.5A CN112239857A (en) 2019-07-17 2019-07-17 Film preparation equipment

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CN112239857A true CN112239857A (en) 2021-01-19

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113488382A (en) * 2021-05-31 2021-10-08 北海惠科半导体科技有限公司 Wafer boat and diffusion equipment
CN114093755A (en) * 2021-11-15 2022-02-25 长鑫存储技术有限公司 Semiconductor structure and forming method thereof
CN114093755B (en) * 2021-11-15 2024-05-03 长鑫存储技术有限公司 Semiconductor structure and forming method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113488382A (en) * 2021-05-31 2021-10-08 北海惠科半导体科技有限公司 Wafer boat and diffusion equipment
CN114093755A (en) * 2021-11-15 2022-02-25 长鑫存储技术有限公司 Semiconductor structure and forming method thereof
CN114093755B (en) * 2021-11-15 2024-05-03 长鑫存储技术有限公司 Semiconductor structure and forming method thereof

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