CN112575312B - Film preparation equipment and film preparation method - Google Patents
Film preparation equipment and film preparation method Download PDFInfo
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- CN112575312B CN112575312B CN201910939459.0A CN201910939459A CN112575312B CN 112575312 B CN112575312 B CN 112575312B CN 201910939459 A CN201910939459 A CN 201910939459A CN 112575312 B CN112575312 B CN 112575312B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a film preparation device and a film preparation method, wherein the film preparation device comprises the following steps: a reaction chamber; the first injection pipe is vertically arranged in the reaction chamber and is provided with a plurality of first injection holes which are sequentially arranged along the first injection pipe; the second injection pipe is arranged in the reaction chamber and comprises a first pipe section extending along the vertical direction, and a plurality of second injection holes are arranged along the first pipe section in sequence; one end of the second pipe section is communicated with the top end of the first pipe section, and the other end of the second pipe section is used for introducing first reaction gas; the bottom end of the first injection pipe is used for introducing first reaction gas. With the thin film preparation device, thin films are generated on a plurality of wafers, and the thicknesses of the thin films grown on the surfaces of the wafer positioned at the upper part of the reaction chamber and the wafer positioned at the bottom of the reaction chamber tend to be consistent.
Description
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to film preparation equipment and a film preparation method.
Background
In the semiconductor manufacturing process, chemical Vapor Deposition (CVD) has been widely used as a thin film process.
Chemical vapor deposition is performed in a reaction chamber of a thin film fabrication apparatus. The wafer is placed in a closed reaction chamber, then the reaction gas is conveyed into film preparation equipment, and the reaction gas and the wafer are subjected to chemical reaction in a high-temperature environment to deposit a layer of film on the surface of the wafer. Taking deposition of a silicon nitride layer as an example, dichlorosilane (SiH 2 Cl 2 ) Ozone (O) 3 ) The reaction gas can react with the wafer after being injected into the reaction chamber to form a silicon oxide layer on the surface of the wafer.
One type of reaction chamber is known as a vertical cylindrical structure, such as a furnace tube. In the reaction chamber, a plurality of wafers are sequentially arranged from bottom to top. The gas input pipe extends upwards into the reaction chamber from the bottom of the reaction chamber and extends in the vertical direction. The gas input pipe is positioned at one side of the wafer. A plurality of air inlets which are uniformly distributed along the vertical direction are arranged on the air input pipe. The lower end of the gas input pipe is communicated with the reaction gas, and the reaction gas enters the reaction chamber from the gas inlets to form a film on the surface of the wafer.
When gas is input into the reaction chamber through the gas input pipe, the pressure of the reaction gas in the reaction chamber is gradually reduced from top to bottom, so that the introduction amount of the reaction gas at the upper end and the lower end of the reaction chamber is unequal, and the thickness of a film grown on the surface of a wafer at the upper end of the reaction chamber is larger than that of a film grown on the surface of a wafer at the lower end of the reaction chamber. This can adversely affect the stability of the final semiconductor device produced.
The above information disclosed in the background section is only for enhancement of understanding of the background of the invention and therefore it may contain information that does not form the prior art that is already known to a person of ordinary skill in the art.
Disclosure of Invention
In the summary, a series of concepts in a simplified form are introduced, which will be further described in detail in the detailed description. This summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter.
It is a primary object of the present invention to overcome at least one of the above-mentioned drawbacks of the prior art, and to provide a thin film manufacturing apparatus comprising:
a reaction chamber;
the first injection pipe is vertically arranged in the reaction chamber and is provided with a plurality of first injection holes which are sequentially arranged along the first injection pipe;
a second injection tube disposed in the reaction chamber and comprising
A first pipe section extending in a vertical direction, provided with a plurality of second injection holes sequentially arranged along the first pipe section;
one end of the second pipe section is communicated with the top end of the first pipe section, and the other end of the second pipe section is used for introducing first reaction gas;
the bottom end of the first injection pipe is used for introducing first reaction gas.
According to one embodiment of the invention, the second pipe section comprises a vertically extending vertical section and an arched connecting section;
the two ends of the connecting section are respectively communicated with the top end of the vertical section and the top end of the first pipe section, and the first pipe section and the vertical section are tangent to the connecting section.
According to one embodiment of the invention, the first injection tube and the second injection tube are both quartz tubes.
According to one embodiment of the invention, the first injection tube is provided with a plurality of injection tubes.
According to one embodiment of the invention, the top end of the first injection tube is closed and the bottom end of the first tube segment is closed.
According to one embodiment of the present invention, the distances between two adjacent first injection holes are equal, and the distances between two adjacent second injection holes are equal.
In accordance with one embodiment of the present invention,
the thin film preparation apparatus further comprises a third injection pipe vertically arranged outside the reaction chamber;
a plurality of third injection holes which are sequentially arranged in the vertical direction are formed in the side wall of the third injection pipe, and the bottom end of the third injection pipe is used for introducing second reaction gas;
the side wall of the reaction chamber is also provided with a plurality of connecting holes, a plurality of connecting holes are sequentially distributed along the vertical direction, and the connecting holes are communicated with the third injection holes in a one-to-one correspondence manner.
According to one embodiment of the invention, the reaction chamber is a closed-top cylindrical structure.
According to one embodiment of the invention, the bottom end of the reaction chamber is also provided with an opening;
the film preparation equipment further comprises a wafer boat, wherein the wafer boat comprises a base, a bracket extending upwards from the base and a plurality of groups of brackets which are arranged on the bracket and are sequentially distributed along the extending direction of the bracket;
wherein the carriers extend from the opening into the reaction chamber, each set of carriers being adapted to hold a wafer.
The invention also provides a film preparation method based on the implementation of the film preparation equipment, which comprises the following steps:
placing a plurality of wafers inside a reaction chamber;
simultaneously injecting a first reaction gas into the reaction chamber through the first injection pipe and the second injection pipe so as to uniformly distribute the first reaction gas in the reaction chamber;
and inputting a second reaction gas into the reaction chamber so that the first reaction gas reacts with the second reaction gas to uniformly deposit a film on the surface of the wafer.
According to the technical scheme, the film preparation equipment has the advantages and positive effects that:
when the first reaction gas is injected into the reaction chamber, the output flow of the first injection hole is smaller when the first injection hole is closer to the bottom end of the reaction chamber, and the output flow of the second injection hole is larger when the second injection hole is closer to the bottom end of the reaction chamber, so that when the first injection hole and the second injection hole simultaneously convey the first reaction gas, the second injection hole can compensate the first reaction gas conveyed by the first injection hole, and the first reaction gas is distributed more uniformly in the vertical direction. Because the concentration of the first reaction gas in the whole reaction chamber tends to be uniform, after the reaction is performed, the thickness of the thin film grown on the surface of the wafer positioned at the upper part of the reaction chamber and the wafer positioned at the bottom of the reaction chamber tends to be uniform. Thus, the stability of the finally produced semiconductor device can be improved.
Drawings
Various objects, features and advantages of the present invention will become more apparent from the following detailed description of the preferred embodiments of the invention, when taken in conjunction with the accompanying drawings. The drawings are merely exemplary illustrations of the invention and are not necessarily drawn to scale. In the drawings, like reference numerals refer to the same or similar parts throughout. Wherein:
FIG. 1 is a schematic perspective view of a thin film fabrication apparatus according to an exemplary embodiment;
FIG. 2 is a schematic diagram of a thin film fabrication apparatus according to an exemplary embodiment;
FIG. 3 is a schematic cross-sectional top view of a thin film fabrication apparatus according to an exemplary embodiment;
FIG. 4 is a partial schematic view of a thin film fabrication apparatus according to an exemplary embodiment.
Wherein reference numerals are as follows:
1. film preparation equipment; 11. a reaction chamber; 111. an inner cavity; 112. an air outlet; 113. an opening; 114. a connection hole; 115. a third injection port; 12. a wafer boat; 121. a base; 122. a bracket; 123. a bracket; 13. a first injection tube; 130. a first injection hole; 14. a second injection tube; 141. a first pipe section; 142. a second pipe section; 143. a second injection hole; 145. a vertical section; 146. a connection section; 15. a third injection tube; 151. a third injection hole; 152. a plasma generator; 2. a first reactant gas source; 3. an air extracting pump; 5. and (3) a wafer.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. However, the exemplary embodiments can be embodied in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus detailed descriptions thereof will be omitted.
Referring to fig. 1, 2, fig. 1, 2 disclose a thin film manufacturing apparatus 1 in the present embodiment. The thin film manufacturing apparatus 1 includes a reaction chamber 11, a first injection tube 13, a third injection tube 15, a second injection tube 14, and a boat 12. The boat 12 is used for carrying a plurality of wafers 5 and for transporting the plurality of wafers 5 into and out of the reaction chamber 11 together. The first injection pipe 13, the third injection pipe 15 and the second injection pipe 14 are all communicated with the inner cavity 111 of the reaction chamber 11. The first injection pipe 13, the third injection pipe 15, and the second injection pipe 14 are each used to charge the reaction chamber 11 with the reaction gas.
The reaction chamber 11 is typically made of a material resistant to high temperatures, such as a quartz material. The reaction chamber 11 has a substantially cylindrical shape. The reaction chamber 11 is vertically disposed. An inner cavity 111 is provided in the reaction chamber 11, and the wafer 5 is formed into a film in the inner cavity 111. An opening 113 is provided in the bottom of the reaction chamber 11. The boat 12 can feed a plurality of wafers 5 into the cavity 111 through the opening 113, and the bottom of the boat 12 closes off the opening 113 after the boat 12 enters the cavity 111. On the boat 12, a plurality of wafers 5 are arranged in the vertical direction. The reaction chamber 11 may be constructed in a cylindrical structure with a closed top end and an unsealed bottom end, and the opening 113 is a bottom end port of the reaction chamber 11. A baffle (not shown) may be further disposed on the reaction chamber 11, and the baffle is used to close the opening 113 when the boat 12 is outside the reaction chamber 11.
The reaction chamber 11 is further provided with an air outlet 112, which air outlet 112 may be provided close to the opening 113. The gas outlet 112 may be externally connected to a gas pump 3, and the gas pump 3 is used for pumping gas from the reaction chamber 11 to pump the gas in the reaction chamber 11.
The first injection pipe 13 and the third injection pipe 15 are straight pipes and are vertically arranged. The second injection tube 14 is an elbow. The first injection pipe 13 and the second injection pipe 14 are both disposed inside the reaction chamber 11, and the third injection pipe 15 is disposed outside the reaction chamber 11. The first injection pipe 13 and the third injection pipe 15 each extend from the bottom end to the top end of the reaction chamber 11.
The first injection pipe 13 is disposed near the inner sidewall of the reaction chamber 11. The top end of the first injection tube 13 is closed. A plurality of first injection holes 130 are provided on a sidewall of the first injection pipe 13. The first injection holes 130 are uniformly distributed along the first injection pipe 13. The first injection hole 130 may be a through hole. The number of the first injection holes 130 is consistent with the maximum number of wafers that can be carried by the wafer boat 12, and the first injection holes 130 are arranged in one-to-one correspondence with the wafers 5 on the wafer boat 12 when the wafer boat 12 is in the reaction chamber 11.
The second injection pipe 14 is disposed near the inner sidewall of the reaction chamber 11. The second injection tube 14 comprises a first tube segment 141 and a second tube segment 142. The first pipe section 141 is disposed vertically. The second pipe section 142 extends from the bottom of the reaction chamber 11 to the top of the first pipe section 141 and communicates with the first pipe section 141. In this embodiment, the second tube segment 142 includes a vertical segment 145 and a connecting segment 146. The vertical section 145 extends vertically, the vertical section 145 being disposed side by side with the first tube section 141. The vertical section 145 and the first pipe section 141 may be in close proximity to each other. The two ends of the connection section 146 are respectively connected to the top ends of the first pipe section 141 and the vertical section 145. The connecting section 146 is preferably arched, and both ends of the connecting section 146 are tangent to the first and second pipe sections 141 and 142, respectively, so that resistance of the reaction gas passing through the connecting section 146 can be reduced. The first pipe section 141 is provided at a sidewall thereof with a plurality of second injection holes 143. The second injection hole 143 is a through hole. The number of the second injection holes 143 may be more than 6, and the plurality of second injection holes 143 may be sequentially arranged in the vertical direction.
Referring to fig. 3, the third injection pipe 15 abuts against the outer side wall of the reaction chamber 11. A plurality of third injection holes 151 are provided on a sidewall of the third injection pipe 15. The third injection hole 151 is a through hole. The number of the third injection holes 151 may be more than 6, and the plurality of third injection holes 151 may be sequentially arranged in the vertical direction. A plurality of connection holes 114 are arranged on the side wall of the reaction chamber 11, and the connection holes 114 are through holes. The number of the connection holes 114 corresponds to the number of the third injection holes 151. The plurality of connection holes 114 are sequentially arranged in the vertical direction, the connection holes 114 are arranged in one-to-one correspondence with the third injection holes 151, and the connection holes 114 are communicated with the corresponding third injection holes 151. The connection hole 114 has a third injection port 115 toward an end port in the reaction chamber 11.
The first injection hole 130, the second injection hole 143, and the third injection hole 115 may each inject a reaction gas toward the boat 12. The interval between the adjacent two first injection holes 130 is equal, the interval between the adjacent two third injection holes 115 is equal, and the interval between the adjacent two second injection holes 143 is equal.
The first injection tube 13, the third injection tube 15 and the first tube segment 141 each comprise a top end and a bottom end opposite the top end. The ends of the top ends of the first injection pipe 13 and the third injection pipe 15 are closed, and the bottom end of the first pipe section 141 is closed. In this embodiment, the bottom ends of the first injection pipe 13, the third injection pipe 15 and the second pipe section 142 are all close to the bottom end of the reaction chamber 11. The bottom ends of the first injection pipe 13 and the second pipe section 142 are externally connected with a first reactant gas source 2. The bottom end of the third injection pipe 15 is externally connected with a second reaction gas source. The first reactive gas source 2 is used for providing a first reactive gas and the second reactive gas source is used for providing a second reactive gas.
The first reactant gas source 2 may be a tank loaded with the first reactant gas. The first reactive gas may be a silicon-containing source gas, such as dichlorosilane (SiH) 2 Cl 2 ). The first reaction gas in the first reaction gas source 2 is injected into the reaction chamber 11 from the first injection hole 130 while the first reaction gas is also injected into the reaction chamber 11 from the second injection hole 143.
The second reactant gas source may be a plasma generator 152 for manufacturing the second reactant gas, and the plasma generator 152 is disposed at the bottom end of the third injection pipe 15. The second reactive gas may be ozone (O) 3 ). Oxygen (O) 2 ) After being introduced into the plasma generator 152, the plasma generator 152 can supply oxygen (O 2 ) Ionization to generate ozone (O) 3 ) These ozone (O) 3 ) Is delivered as the second reaction gas into the third injection pipe 15 and then injected into the reaction chamber 11 from the third injection port 151.
The first and second reactive gases react in a high temperature environment to form a thin film on the surface of the wafer 5. The following describes in more detail a silicon oxide film deposited on a wafer surface by atomic layer deposition:
first, first reaction gas is injected into the reaction chamber 11 through the first injection hole 130 and the second injection hole 143 at the same time, and is pumped out of the reaction chamber after a silicon atomic layer is deposited on the surface of the wafer; ozone is injected into the reaction chamber 11 through the third injection port 151, and the ozone is used as a second reaction gas to react with silicon atoms on the surface of the wafer to generate silicon dioxide, and then the second reaction gas is extracted; the two steps are alternately performed until the silicon dioxide film on the wafer reaches a preset thickness.
In the first injection pipe 13, the gas pressure at the bottom end is smaller than the gas pressure at the top end, and thus, the first reaction gas output flow rate of the first injection hole 130 near the bottom end is smaller than the first reaction gas output flow rate of the first injection hole 130 near the top end. The second pipe section 142 of the second injection pipe 14 communicates the top end of the first pipe section 141 with the first reactant gas source, and the gas pressure at the top end of the first pipe section 141 is smaller than the gas pressure at the bottom end of the first pipe section 141, so that the first reactant gas output flow rate of the second injection hole 143 near the top end is smaller than the first reactant gas output flow rate of the second injection hole 143 near the bottom end.
Thus, the output flow rate of the first injection holes 130 on the first injection pipe 13 is smaller as they are closer to the bottom end of the reaction chamber, and the output flow rate of the second injection holes 143 on the second injection pipe 14 is larger as they are closer to the bottom end of the reaction chamber, so that the second injection holes 143 can compensate the first reaction gas supplied from the first injection holes 130 so that the first reaction gas is distributed more uniformly in the vertical direction when the first injection holes 130 and the second injection holes 143 simultaneously supply the first reaction gas. Since the concentration of the first reaction gas in the entire reaction chamber 11 tends to be uniform, after the reaction is performed, the thickness of the thin film grown on the surface of the wafer 5 located at the upper portion of the reaction chamber 11 and the wafer 5 located at the bottom portion of the reaction chamber 11 tends to be uniform.
Further, the first injection pipe 13 and the second injection pipe 14 are both quartz pipes.
The first injection tube 13 and the second injection tube 14 made of quartz are more resistant to high temperature and cannot be deformed or melted due to the excessively high temperature in the reaction chamber. Meanwhile, the chemical properties of the first and second injection pipes 14 made of quartz are stable, and they do not react with the reaction gas at high temperature.
Further, referring to fig. 4, the first injection pipe 13 may be provided in plurality. In this embodiment, two first injection pipes 13 may be provided, and two first injection pipes 13 and two second injection pipes 14 are provided on the same side of the reaction chamber. The two first injection pipes 13 are arranged close to each other, and the second injection pipe 14 is arranged at one side of one first injection pipe 13 facing away from the other first injection pipe. The injection directions of the first injection holes 130 on the two first injection pipes 13 and the second injection holes 143 on the second injection pipe 14 are each toward the middle region of the reaction chamber.
After the arrangement, the first injection pipes 13 and the second injection pipes 14 simultaneously inject the first reaction gas into the reaction chamber, so that the distribution of the first reaction gas in the reaction chamber is more uniform, and the films generated on each wafer are more uniform. The plurality of first injection pipes 13 and the plurality of second injection pipes 14 can accelerate the injection of the first reaction gas and reduce the wafer processing time when the first reaction gas is injected into the reaction chamber at the same time.
Further, the boat 12 includes a base 121, a rack 122, and a plurality of sets of brackets 123. The base 121 may be plate-shaped, for example, a circular plate. The base 121 may be horizontally disposed. The bracket 122 is mounted on the upper surface of the base 121. The bracket 122 extends upward from the upper surface of the base 121. The plurality of sets of carriers 123 are sequentially arranged on the carrier 122 along the extending direction of the carrier 122, and each set of carriers 123 can hold one wafer 5. The support 122 can extend into the reaction chamber 11 from the bottom opening 113 of the reaction chamber 11 so that all wafers 5 on the carrier 123 can enter the reaction chamber 11.
Although the invention has been disclosed with reference to certain embodiments, numerous variations and modifications may be made to the described embodiments without departing from the scope and scope of the invention. It is to be understood, therefore, that the invention is not to be limited to the specific embodiments disclosed and that it is to be defined by the scope of the appended claims and their equivalents.
Claims (10)
1. A thin film formation apparatus, comprising:
a reaction chamber;
the first injection pipe is vertically arranged in the reaction chamber and provided with a plurality of first injection holes which are uniformly distributed along the first injection pipe;
a second injection tube disposed in the reaction chamber and comprising
The first pipe section extends along the vertical direction, a plurality of second injection holes are formed in the first pipe section, the second injection holes are uniformly distributed along the first pipe section, and the bottom end of the first pipe section is closed;
one end of the second pipe section is communicated with the top end of the first pipe section, and the other end of the second pipe section is used for introducing first reaction gas;
the bottom end of the first injection pipe is used for introducing first reaction gas, when the first injection hole and the second injection hole simultaneously convey the first reaction gas into the reaction chamber, the output flow of the first injection hole is smaller when the first injection hole is closer to the bottom end of the reaction chamber, the output flow of the second injection hole is larger when the second injection hole is closer to the bottom end of the reaction chamber, and the second injection hole compensates the first reaction gas conveyed by the first injection hole so that the first reaction gas is distributed more uniformly in the vertical direction.
2. The thin film formation apparatus according to claim 1, wherein the second pipe section includes a vertical section extending vertically and an arched connecting section;
the two ends of the connecting section are respectively communicated with the top end of the vertical section and the top end of the first pipe section, and the first pipe section and the vertical section are tangent to the connecting section.
3. The thin film formation apparatus according to claim 1, wherein the first injection tube and the second injection tube are both quartz tubes.
4. The thin film formation apparatus according to claim 1, wherein the first injection pipe is provided with a plurality of injection pipes.
5. The thin film formation apparatus according to claim 1, wherein the top end of the first injection tube is closed.
6. The thin film formation apparatus according to claim 1, wherein a distance between adjacent two of the first injection holes is equal, and a distance between adjacent two of the second injection holes is equal.
7. The thin film formation apparatus according to any one of claims 1 to 6, wherein,
the thin film preparation apparatus further comprises a third injection pipe vertically arranged outside the reaction chamber;
a plurality of third injection holes which are sequentially arranged in the vertical direction are formed in the side wall of the third injection pipe, and the bottom end of the third injection pipe is used for introducing second reaction gas;
the side wall of the reaction chamber is also provided with a plurality of connecting holes, a plurality of connecting holes are sequentially distributed along the vertical direction, and the connecting holes are communicated with the third injection holes in a one-to-one correspondence manner.
8. The thin film formation apparatus according to claim 1, wherein the reaction chamber has a closed-top cylindrical structure.
9. The thin film formation apparatus according to any one of claims 1 to 6, wherein a bottom end of the reaction chamber is further provided with an opening;
the film preparation equipment further comprises a wafer boat, wherein the wafer boat comprises a base, a bracket extending upwards from the base and a plurality of groups of brackets which are arranged on the bracket and are sequentially distributed along the extending direction of the bracket;
wherein the carriers extend from the opening into the reaction chamber, each set of carriers being adapted to hold a wafer.
10. A thin film production method, characterized by being implemented based on the thin film production apparatus according to any one of claims 1 to 9, comprising:
placing a plurality of wafers inside a reaction chamber;
simultaneously injecting a first reaction gas into the reaction chamber through the first injection pipe and the second injection pipe so as to uniformly distribute the first reaction gas in the reaction chamber;
and inputting a second reaction gas into the reaction chamber so that the first reaction gas reacts with the second reaction gas to uniformly deposit a film on the surface of the wafer.
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| CN201910939459.0A CN112575312B (en) | 2019-09-30 | 2019-09-30 | Film preparation equipment and film preparation method |
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| CN201910939459.0A CN112575312B (en) | 2019-09-30 | 2019-09-30 | Film preparation equipment and film preparation method |
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