!269818 九、發明說明： 【發明所屬之技術領域】 說， 氣體 本發明係關於一種用以製造半導體裝置之設備，更明 係關於一種用以製造半導體裝置之設備的噴並制 均勻地注入反應室中。 /、了將衣& 【先前技術】 在半導體領域中，新材質的研發正積極地進行中， 5^貝體電路（LSI，Large-Scale Integrated circuit)如超大 并鹏 路（ULSI，Ultra Large-Scale Integrated circuit)也因為这此二二: 長而不斷發展。換言之，因為用來形成薄 J體衣置之絕緣層、半導體層與導體層）之新材質在此領域^ 廣泛的發展，因此才有現今如1；1^1等1^1。半導體裝置通篓 重覆的沈積與形成圖案製程來製造。這些製程常在真空狀態下曰， 於一反應室製程模組中完成。 ^ 、、作為半導體裝置之晶圓通常利用化學氣相沈積（CVD)的方 法^反應至中進行處理。反應氣體通常透過喷頭由一供應裝置（未 圖示)=人反應室中，以對裝載於反應室中的晶圓表面進行處理。 ^著晶®尺寸變大，均自地處理晶圓表面也變得更為困難。 =解決這個問題，處理晶圓表面所用之氣體利用喷頭注入反應 至中〔因為喷頭，氣體得以均勻地分布於反應室中，如此便可以 在晶圓表面上進行一均勻的CVD製程。 圖1A及1B為一CVD反應室及一用以製造半導體裝置之 CVD反應室=喷碩的橫剖面圖。在圖认及lB中，一狹縫閥6〇 形成於反應室10的側壁，使得晶圓5G可進出反應室1G。如狹縫 閥60曰打開’曰曰曰圓^〇 *外界傳入反應室1〇 *，然後裝載於晶座4〇 上。£曰座4(^可藉著一驅動裝置45而上下移動。一加熱器（未圖 =)设置於晶座40中用來加熱晶圓5〇。如前所述，反應氣體透過 喷頭70注入反，應室1〇。噴頭7〇包含一具有複數個穿過底板乃 的注入孔h的喷頭本體7〇a與一向其連接之氣體供應管7〇b。處理 Ϊ269818 炒^ ®斤用之氣體透過氣體供應管70b輸入喷頭本體7〇a， tiitfiln數個注人孔仏人晶圓5G上的空間。最後，氣體藉 氣^ ―排出反應室10外。喷頭70連接到一射頻(RF，Radio ^equency )電源供應器來同時作為一電聚電極，而晶座4〇是接地 θ勺0 士 ·τΞ·2Λ，2β為依據習知技術之典型喷頭的橫剖面圖且特別放 ϊ /Λ。之底板75的橫剖面。在圖2Α中，注入孔h有-入口 、、主入:?丨同^入口 ί的直徑D1小於出口0的直徑D2。因此， 口 ^ /柯之漏斗雜。如此，當流域過注入孔 通過庄入孔h之速度會減慢，然後再注入晶圓 如果喷頭几’八1會大於兩相鄰出口 〇之間的距離A2。因此， 供應器而上升熱器（未圖示）或射頻電源 7^之底ϊ部分之間的寬度差異可能會造成底板 70中，而噴頭70 ;、aV^生於底板75，熱應力便會累積於噴頭 圓5〇無法難整個離可能會不—致。因此，晶 徑D2大於入口 ！的^^丁均勻地處理。此外，因為出口 〇的直 慢，所以氣體無法到過出口 〇時其速度減 勻地分布於反應室1Q巾離m孔h之區域。因之’氣體無法均 所以對於藉緊密形雜 ’因^出Π 0的餘D2相當大， 制。此外，噴頭7〇H來i冒加氣體注入之有效面積會造成限 【發明内容】 轉會因未鑽注入孔之區域而增加。 頭，^本造半導，置之CVD設備的噴 引起的問題。 ，夕固起因於習知技術之限制或缺點所 本發明的一個優點皂扭BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for manufacturing a semiconductor device, and more particularly to a uniform injection reaction of a device for fabricating a semiconductor device. In the room. /, 衣衣& [Prior Art] In the field of semiconductors, research and development of new materials is actively underway, and LSI (Large-Scale Integrated circuit) such as ULSI (Ultra Large) -Scale Integrated circuit) Also because of this two: long and growing. In other words, since the new material for forming the insulating layer, the semiconductor layer and the conductor layer of the thin body is widely developed in the field, it is now such as 1; 1^1, etc. 1^1. Semiconductor devices are fabricated by repeated deposition and patterning processes. These processes are often carried out under vacuum and in a process chamber process module. ^, a wafer as a semiconductor device is usually processed by chemical vapor deposition (CVD). The reaction gas is usually passed through a showerhead from a supply device (not shown) = human reaction chamber to treat the surface of the wafer loaded in the reaction chamber. ^The size of the Crystal® has become larger, and it has become more difficult to handle the wafer surface from the ground. = To solve this problem, the gas used to treat the surface of the wafer is injected into the reaction using the nozzle (because the nozzle, the gas is evenly distributed in the reaction chamber, so that a uniform CVD process can be performed on the surface of the wafer. 1A and 1B are cross-sectional views of a CVD reaction chamber and a CVD reaction chamber for squirting a semiconductor device. In the drawing, in Fig. 1B, a slit valve 6 is formed in the side wall of the reaction chamber 10 so that the wafer 5G can enter and exit the reaction chamber 1G. For example, the slit valve 60 曰 opens '曰曰曰 〇 〇 〇 * The outside is introduced into the reaction chamber 1 〇 *, and then loaded on the crystal holder 4 。. The cymbal 4 (^ can be moved up and down by a driving device 45. A heater (not shown) is disposed in the crystal holder 40 for heating the wafer 5. As described above, the reaction gas passes through the shower head 70. Injecting the reverse, the chamber 7〇 includes a nozzle body 7〇a having a plurality of injection holes h passing through the bottom plate and a gas supply pipe 7〇b connected thereto. The treatment Ϊ 818 268818 The gas is supplied to the head body 7〇a through the gas supply pipe 70b, and tiitfiln a plurality of holes on the human wafer 5G. Finally, the gas is taken out of the reaction chamber 10. The nozzle 70 is connected to a radio frequency. (RF, Radio ^equency ) The power supply is used as an electro-converging electrode at the same time, and the crystal holder 4 〇 is the ground θ scoop 0 士 · τ Ξ · 2 Λ, 2β is a cross-sectional view of a typical nozzle according to the prior art and The cross section of the bottom plate 75. In Fig. 2, the injection hole h has an inlet, a main inlet: the diameter D1 of the inlet ί is smaller than the diameter D2 of the outlet 0. Therefore, the mouth ^ / 柯The funnel is so mixed. So, when the watershed over the injection hole passes through the slab hole h, the speed will slow down, and then the wafer is injected into the wafer.八1 will be greater than the distance A2 between two adjacent exit ports. Therefore, the difference in width between the supply and the riser (not shown) or the bottom portion of the RF power source 7^ may cause the bottom plate 70, and The nozzle 70; aV^ is born on the bottom plate 75, and the thermal stress will accumulate in the nozzle circle 5〇, which cannot be difficult to be completely removed. Therefore, the crystal diameter D2 is larger than the inlet! The enthalpy of the exit enthalpy, so the gas can not reach the exit 〇 when its speed is evenly distributed in the area of the reaction chamber 1Q towel away from the m hole h. Because of the 'gas can not be uniform, so for the dense shape of the miscellaneous 'cause Π 0 The remaining D2 is quite large. In addition, the effective area of the nozzle 7〇H to the gas injection will cause a limit. [Invention] The transfer will increase due to the area of the un-injected hole. Head, semi-conducting, The problem caused by the spraying of the CVD equipment. One of the advantages of the present invention is the soapy twist caused by the limitations or disadvantages of the prior art.
設備的噴頭，在1中供—種用以製造半導體裝置之CVD 、甲配置有锼數個漏斗型的第一注入孔與複數個 6 1269818 倒漏斗型的第二注入孔穿透一底板，以避免該底板 加氣體注入之有效面積。 …、夂烙舁立曰 本^明的另一個優點為提供一種用以製造半導體裝置之CVD 設備的喷頭，在其中形成複數個注入孔穿透一底板，該注入孔之 入口與出口之間有一通道，且該入口與出口的直徑相等。 、其他本發明之特徵與優點將會在接下來的描述中提出， 下述說明本發縣可更容易瞭解，或者可藉由實行本發明^學 習。本發明之兀件與其他優點藉著接下來的說明與申請 及附圖所指出之結構將可了解與獲得。 …為了要達到這些以及其他關於本發明的優點，做為例示性與 廣，說明性二一種用以製造半導體裝置之CVD設備的喷頭，包^ 一氣體供應官，一具有一底板的噴頭本體，該喷頭本體連接至該 氣體供應管，該底板具有複數個穿透該底板之第一注入孔與第二 注公孔：ΐ中該第一注入孔之入口直徑小於該第-注入孔之出口 直徑二该第二注入孔之入口直徑大於該第二注入孔之出口直徑， 且该第二注入孔與該第一注入孔交替地配置。任選四個該第一注 士孔作為-正方形的四個頂點，則該第二注入孔位於該正方形的 中心點。該第一與第二注入孔為漏斗形狀。 種用以製造半導體裝置之CVD設備的喷頭，包含-氣體 二=e具有—底板时頭本體，射頭本體連接至該氣體供 應官，该底板具有複數個穿透該底板之注入孔，其中該注入孔之 入口直徑等於該注人孔之出口直徑，且該人口藉―通道連接至該 ，二該通道配錄該人口與該出口之間，且具有—小於該入口 與該出口之直徑。 此處應了解前述的-般說明與接下來的詳細說明皆為例示性 與說，性，錢為了提供本發蚊進—步之說_ 【實施方式】 接下來配合附圖，將詳細說明本發明之實施例。The nozzle of the device is provided in a CVD for manufacturing a semiconductor device, a first injection hole configured with a plurality of funnels, and a plurality of second injection holes of a 6 1269818 inverted funnel type penetrating a bottom plate to Avoid the effective area of the bottom plate plus gas injection. Another advantage of the present invention is to provide a showerhead for a CVD apparatus for fabricating a semiconductor device in which a plurality of injection holes are formed to penetrate a substrate between the inlet and the outlet of the injection hole. There is a passage, and the inlet is equal in diameter to the outlet. Other features and advantages of the present invention will be set forth in the description which follows. The description below may be more readily understood by the present invention or may be practiced by the practice of the present invention. The components and other advantages of the present invention will be appreciated and attained by the description of the appended claims. In order to achieve these and other advantages with respect to the present invention, illustrative and broad, illustrative, two types of showerheads for CVD equipment for fabricating semiconductor devices, including a gas supply officer, a showerhead having a backplane a body, the nozzle body is connected to the gas supply pipe, the bottom plate has a plurality of first injection holes and second injection holes penetrating the bottom plate: the inlet diameter of the first injection hole is smaller than the first injection hole The diameter of the outlet of the second injection hole is larger than the diameter of the outlet of the second injection hole, and the second injection hole and the first injection hole are alternately arranged. Optionally, the first first aperture is the four vertices of the square, and the second injection aperture is located at the center of the square. The first and second injection holes are in the shape of a funnel. A nozzle for a CVD apparatus for manufacturing a semiconductor device, comprising: a gas two = e having a bottom plate head body, the head body being connected to the gas supply officer, the bottom plate having a plurality of injection holes penetrating the bottom plate, wherein The inlet diameter of the injection hole is equal to the diameter of the outlet of the injection hole, and the population is connected to the channel by the channel, and the channel is between the population and the outlet, and has a diameter smaller than the diameter of the inlet and the outlet. It should be understood that the foregoing general description and the following detailed description are both illustrative and illustrative, and that, in order to provide the present invention, the present invention will be described in detail below. Embodiments of the invention.
在本發明中，所有圖中相同的符號代表與圖1A及1B與圖2A 1269818 及2B中相同的元件或功能。所以在此省略相同元件與功能的說 日月。 ^ 圖3A及3B為依據本發明第一實施例的噴頭的橫剖面圖。在 圖3A及3B中，一本發明第一實施例的喷頭本體7〇a不像圖2A 及2B中典型的噴頭本體，其具有兩種不同的注入孔。即是，一第 二注入孔hi與一第二注入孔h2穿過圖丨a中噴頭本體7加的底板 乃而形成。第一注入孔hi為一漏斗形狀，其入口 u的直徑D3 小於出口 01的直徑D4,而第二注入孔為一倒漏斗形狀，其入 口 12的直徑D5大於出口 〇2的直徑D6。如圖3A所示，第I注 入孔hi與第二注入孔h2交替的配置。即，任選四個第一注入孔 hi作為矩形T1的四個頂點，則第二注入孔泣必位於矩形”的 中心點。因此，任選四個第二注入孔h2也會形成一第一注入孔M 位於中心點的矩形T2。較佳的狀況是第一注入孔hl與第二注入 孔h2分別形成一正方形。因此，第一注入孔之入口 η以及與 其鄰接第二注人孔h2之人口 12之間的寬度會等於第_注入孔hl 之出口 01以及與其鄰接第二注入孔h2之出口 〇2之間的寬度。 y因此，即使當喷頭本體70a產生熱膨脹時，底板75也不會變 开^此外，一部伤用來處理晶圓50表面的製程氣體被注入晶圓50 上的區士域，因為當流動氣體通過出口 〇1較入口 n大的第一注入 子L II時，其速度減慢。其餘的氣體則可被注入離晶圓5〇較遠的區 知、，晶圓50上的區域’因為當流動氣體通過出口 〇2較入口 口小 ί第時’其速度會變快。另外，因為與習知技術相比 相同大小面積裡可形成較多數目之注入孔，所以 可增加亂體注人之有效面積且可減少偏7()的重量。 趁本if明第二實施例的_的橫剖關。在圖4中， &板的庄入孔h具有相同直徑大小的入 入孔h入口 I的直徑聱π、、± λ ?丨u τ 1 τ也山^ >日日> 4於/主入孔h出口 〇的直徑。在入口 I:出口 0之間有一_ s，其直徑小於入口工斑出口 〇。雖欽盥 篇知技術她’第二實施财氣敝人之歧面誠沒有增力ΓΓ 1269818 但因為兩相鄰入口 i之間的寬度A5#於兩相鄰出口 〇之間 Α6 ’所以可以避免底板75之熱變形。此外，因為與習知技術相比， 底板75未包含注入孔h的面積減少，所以可以減輕喷頭7〇的重 量。 、 根據本發明，因為注人孔兩相鄰人口之_寬度等於兩 出口之間的寬度，所以即使當喷頭本體7〇a在遭受熱應力時， 可以避免底板75的熱變形。因此，可以在晶圓的整^面上 地沈，薄膜。此外，具有如本發明第—與第二實_所製作注入 孔的喷頭70㈣均自地分散製減體到整個 75較遠的區域與晶圓上的區域。另外，因為與習知技術^底^In the present invention, the same reference numerals in all the drawings represent the same elements or functions as those in Figs. 1A and 1B and Figs. 2A 1269818 and 2B. Therefore, the same elements and functions are omitted here. 3A and 3B are cross-sectional views of a head according to a first embodiment of the present invention. In Figs. 3A and 3B, a head body 7A of a first embodiment of the present invention is different from the head body typical of Figs. 2A and 2B, and has two different injection holes. That is, a second injection hole hi and a second injection hole h2 are formed through the bottom plate of the head body 7 in Fig. a. The first injection hole hi is in the shape of a funnel, the diameter D3 of the inlet u is smaller than the diameter D4 of the outlet 01, and the second injection hole is in the shape of an inverted funnel, and the diameter D5 of the inlet 12 is larger than the diameter D6 of the outlet port 2. As shown in Fig. 3A, the first injection hole hi and the second injection hole h2 are alternately arranged. That is, if four first injection holes hi are selected as the four vertices of the rectangle T1, the second injection hole must be located at the center point of the rectangle. Therefore, the optional four second injection holes h2 also form a first The injection hole M is located at a center point of the rectangle T2. Preferably, the first injection hole hl and the second injection hole h2 form a square, respectively. Therefore, the inlet η of the first injection hole and the second injection hole h2 adjacent thereto The width between the populations 12 will be equal to the width between the outlet 01 of the first injection hole hl and the outlet 〇2 adjacent to the second injection hole h2. y Therefore, even when the shower head body 70a is thermally expanded, the bottom plate 75 does not. In addition, a process gas for treating the surface of the wafer 50 is injected into the region of the wafer 50 because the flowing gas passes through the first injection L II having a larger outlet than the inlet n. , the speed is slowed down. The rest of the gas can be injected into the area far away from the wafer 5, the area on the wafer 50 'because when the flowing gas passes through the outlet 〇 2 is smaller than the inlet port' its speed Will be faster. In addition, because compared with the conventional technology A larger number of injection holes can be formed in the large and small areas, so that the effective area of the body can be increased and the weight of the partial 7() can be reduced. The cross-sectional view of the second embodiment is shown in Fig. 4. In the middle, the plated hole h of the & plate has the same diameter and the size of the entrance hole h. The diameter of the inlet I 聱π, ± λ 丨u τ 1 τ yam ^ > day > 4 in / main entrance hole h The diameter of the exit 。. There is a _ s between the inlet I: the exit 0, and its diameter is smaller than the entrance exit 〇. Although the knowledge of the technology, she’s the second implementation of the financial straits, there is no force. 1269818 However, since the width A5# between the two adjacent inlets i is between the two adjacent outlets Α6', the thermal deformation of the bottom plate 75 can be avoided. Furthermore, since the bottom plate 75 does not contain the injection hole h as compared with the prior art, The area is reduced, so that the weight of the nozzle 7 can be reduced. According to the present invention, since the width of the two adjacent populations of the injection hole is equal to the width between the two outlets, even when the nozzle body 7〇a is subjected to thermal stress When the thermal deformation of the bottom plate 75 can be avoided, it is possible to sink on the entire surface of the wafer. In addition, the shower head 70 (four) having the injection holes made by the first and second real films of the present invention are all dispersed from the ground to the region of the entire 75 and the area on the wafer. In addition, because of the conventional Technology ^ bottom ^
ΐίΐί的注人孔穿過底板75，所以可以增加氣體注人的有效面 積並減輕噴頭70的重量。 心很明顯地，熟悉本技藝者在不離開本發明之精神盥範圍内， 發明進行各種修改與變化。因此所有與隨附^申請專利 靶圍思義相等之變化均應包含於本發明之中。 【圖式簡單說明】 八2了能對本發明提供更進一步的了解，本發明配合附圖並結 二闡述本發明之原則的說明來說明本發明之實施例。在這些The 注ίΐί manhole passes through the bottom plate 75, so that the effective area of the gas injection can be increased and the weight of the head 70 can be reduced. It is obvious to those skilled in the art that various modifications and changes can be made thereto without departing from the spirit and scope of the invention. Therefore, all changes that are equivalent to the scope of the attached patent application should be included in the present invention. BRIEF DESCRIPTION OF THE DRAWINGS The invention will be further described in detail with reference to the appended claims. In these
°^反應室及—用以製造轉體裝置的噴 固2A及2B為依據習知技術之典型喷頭的橫剖面圖； 圖3A及3B為依據本發明第一實施例的嘴頭的橫剖面圖；及 圖4為依據本發明第二實施例的喷頭的橫剖面圖。 【主要元件符號說明】 10 反應室 40晶座 ^ 驅動裝置 晶圓 9 50 1269818 60 狹缝閥 70 喷頭 70a 喷頭本體 70b 氣體供應管 75 底板 80 排氣管 A1 相鄰入口I之間的距離 A2 相鄰出口 0之間的距離 A3 相鄰入口 11與12之間的距離 A4 相鄰出口 01與02之間的距離 A5 相鄰入口I之間的距離 A6 相鄰出口 0之間的距離 D1 入口 I直徑 D2 出口 0直徑 D3 入口 11直徑 D4 出口 01直徑 D5 入口 12直徑 D6 出口 02直徑 D7 入口 I直徑 D8 出口 0直徑 h 注入孔 hi 第一注入孔 h2 第二注入孔 I 入口 11 入口 12 入口 0 出口 01 出口 02 出口The reaction chamber and the spray-molding 2A and 2B for manufacturing the swivel device are cross-sectional views of a typical spray head according to the prior art; and FIGS. 3A and 3B are cross-sections of the nozzle head according to the first embodiment of the present invention. Figure 4 is a cross-sectional view of a showerhead in accordance with a second embodiment of the present invention. [Main component symbol description] 10 Reaction chamber 40 crystal holder ^ Driver wafer 9 50 1269818 60 Slit valve 70 nozzle 70a nozzle body 70b gas supply tube 75 bottom plate 80 exhaust pipe A1 distance between adjacent inlets I A2 Distance A3 between adjacent exits 0 Distance A4 between adjacent inlets 11 and 12 Distance A5 between adjacent exits 01 and 02 Distance A6 between adjacent inlets I Distance D1 between adjacent exits 0 Inlet I Diameter D2 Outlet 0 Diameter D3 Inlet 11 Diameter D4 Outlet 01 Diameter D5 Inlet 12 Diameter D6 Outlet 02 Diameter D7 Inlet I Diameter D8 Outlet 0 Diameter h Injection Hole hi First Injection Hole h2 Second Injection Hole I Entrance 11 Entrance 12 Entrance 0 exit 01 exit 02 exit
10 1269818 s 通道 T1 矩形 Τ2 矩10 1269818 s channel T1 rectangle Τ2 moment