CN1316455C - 具有超分辨率近场结构的高密度记录介质 - Google Patents
具有超分辨率近场结构的高密度记录介质 Download PDFInfo
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Abstract
提供一种包括包含高熔点金属氧化物或氧化硅的掩蔽层的具有超分辨率近场结构的高密度记录介质。更具体地讲，提供一种具有超分辨率近场结构的高密度记录介质，其包括依次堆叠的第二电介质层、记录层、保护层、掩蔽层、第一电介质层和聚碳酸酯层，其中掩蔽层包括高熔点金属氧化物或氧化硅以通过光或热诱导高熔点金属氧化物或氧化硅的结晶结构和光学特性中的物理变化来产生近场。
Description
技术领域
本发明涉及一种高密度记录介质，更具体地讲，涉及一种使用高熔点金属氧化物或氧化硅掩蔽层来制造的具有超分辨率近场结构的高密度记录介质。
背景技术
传统的记录介质能够被分类成磁光记录介质或相变记录介质。在磁光记录介质，如微型盘(MD)中，通过根据磁力和磁膜的磁化方向来检测从磁膜反射的直偏振光的旋转而读出信息。反射光的旋转被称作为“克尔效应”。在相变记录介质，如数字多功能盘(DVD)中，根据由于记录介质的非晶态记录域和晶态非记录域之间光学常数的不同吸收系数而引起的反射率的不同来读出信息。
最近，如在相变方法中，使用微型标记(凹坑)来记录信息和从记录介质中再现信息而不考虑衍射极限的多种方法已经被建议。在这些方法中最感兴趣的一种是使用超分辨率近场结构的记录方法，其公开在Applied PhysicsLetter，Vol.73，No.15，Oct.1998和日本期刊Applied Physics，Vol.39，Part l，No.2B，2000，PP.980-981。超分辨率近场结构使用在其特定掩蔽层产生的局部表面等离子体振子以再现信息。超分辨率近场结构被分类成：锑(Sb)传输型，其具有当从记录介质中再现信息时由于激光照射而变得透明的锑掩蔽层；或氧化银分解型，其具有分解成氧和银的氧化银(AgOx)掩蔽层，该氧化银(AgOx)掩蔽层起诱导局部等离子体振子的散射源的作用。
图1示出使用传统超分辨率近场结构的记录介质的结构。
如图1中所示，记录介质包括例如由ZnS-SiO2制成的第二电介质层112-2、例如由GeSbTe制成的记录层115、由电介质材料如ZnS-SiO2或SiN制成的保护层114、例如由Sb或AgOx制成的掩蔽层113、例如由ZnS-SiO2或SiN制成的第一电介质层112-1、和透明聚碳酸酯层111，这些层被顺序地相互堆叠。
当掩蔽层113由Sb制成时，SiN被用于保护层114和第一电介质层112-1。当掩蔽层113由AgOx制成时，ZnS-SiO2被用于保护层114和第一电介质层112-1。当再现信息时，保护层114防止记录层115和掩蔽层113之间的反应并且作为近场在其上作用的场所。当再现信息时，掩蔽层113的Sb变得透明，并且掩蔽层113的AgOx分解成氧和银，该氧化银(AgOx)掩蔽层起诱导局部等离子体振子的散射源的作用。
记录介质被通过聚焦透镜(未示出)的从激光源118发射的大约10-15mW的激光束照射以将记录层115加热到600℃以上，从而记录层115的激光照射的域变成非晶态，并且不管光学常数(n、k)的折射率n的改变而具有较小的光学常数(n、k)的吸收系数k。在Sb或AgOx掩蔽层113的照射域中，Sb的结晶结构改变或者AgOx不可逆的分解，从而起产生等离子体振子的散射源的作用，结果是产生比发射的激光束短的波长的光。保护层114用作朝向记录层115的超分辨率近场。其结果是，可将作为在尺寸上比所使用的激光的衍射极限小的微型标记被记录在记录介质上的信息再现。因此，可使用这种超分辨率近场结构，而不考虑所使用的激光的衍射极限来将记录在高密度记录介质中的信息再现。
然而，在具有这种超分辨率近场结构的记录介质中，它们的掩蔽层和记录层具有相似的转变温度，因而在信息再现期间确保热稳定性被认为是重要的。此外，这种超分辨率近场结构导致差的噪声特性。
发明内容
本发明提供了一种通过采用包括高熔点金属氧化物或氧化硅的掩蔽层而在信息从其中再现期间确保改善的热稳定性和噪声特性的具有超分辨率近场结构的高密度记录介质。
根据本发明的一方面，提供一种具有超分辨率近场结构的高密度记录介质，其包括依次堆叠的第二电介质层、记录层、保护层、掩蔽层、第一电介质层和聚碳酸酯层，其中掩蔽层包括高熔点金属氧化物或氧化硅以通过光或热诱导高熔点金属氧化物或氧化硅的结晶结构和光学特性中的物理变化来产生近场。
一种在再现期间提供有效的热稳定性和改善的噪声特性的根据本发明的超分辨率近场高密度记录介质可以由包括高熔点金属氧化物或氧化硅的掩蔽层来实现。
一种在再现期间提供有效的热稳定性和改善的噪声特性的根据本发明的超分辨率近场高密度记录介质可以由包括作为显示可逆的物理变化的高熔点金属氧化物的WOx的掩蔽层来实现。
一种在再现期间提供有效的热稳定性和改善的噪声特性的根据本发明的超分辨率近场高密度记录介质可以由包括作为显示不可逆的物理变化的高熔点金属氧化物的TaOx或AuOx的掩蔽层来实现。
一种在再现期间提供有效的热稳定性的根据本发明的超分辨率近场高密度记录介质可以由包括作为显示不可逆的物理变化的氧化硅的SiOx的掩蔽层来实现。
一种在再现期间提供有效的热稳定性和改善的噪声特性的超分辨率近场高密度记录介质还可以包括在第二电介质层下方的包含银(Ag)或铝(Al)的反射层。
附图说明
图1示出具有传统的超分辨率近场结构的高密度记录介质；
图2示出根据本发明实施例的具有超分辨率近场结构的高密度记录介质；
图3是对于根据本发明的记录介质和传统的记录介质的载波与噪声的比(CNR)与标记长度的关系的曲线图；和
图4是对于根据本发明的记录介质和传统的记录介质的噪声级别与标记长度的关系的曲线图。
具体实施方式
现在将通过不断地参照附图来详细地描述用于解决传统问题的本发明的结构和操作。
图2示出根据本发明实施例的具有超分辨率近场结构的高密度记录介质。图2的高密度记录介质包括：反射层，由银(Ag)或铝(Al)制成；第二电介质层122-2，例如由ZnS-SiO2制成；记录层125，例如由GeSbTe制成；保护层124，由电介质材料例如ZnS-SiO2/SiN制成；掩蔽层123；第一电介质层122-1，例如由ZnS-SiO2/SiN制成；和透明聚碳酸酯层121，这些层被顺序地相互堆叠。
掩蔽层123由高熔点金属氧化物和氧化硅之一制成。高熔点金属氧化物的例子包括：WOx，其在从记录介质中再现期间显示几乎可逆的物理变化以用于提改善热稳定性和噪声特性；和TaOx或AuOx，其显示不可逆的物理变化并有效地改善噪声特性。氧化硅的一例子为SiOx，其导致不可逆的物理变化并有效地改善噪声特性。
保护层124在再现信息期间防止记录层125和掩蔽层123之间的反应，并且用作超分辨率近场在其上起作用的场所。另外，掩蔽层123用作散射源以通过其在结晶结构和光学特性中的物理变化来产生局部等离子体振子。
由Ag或Al制成的反射层128用于诱导在背离入射激光束侧的记录层125和第二电介质层122-2的结晶结构和光学特性中的物理变化，以产生几乎等于在面向入射激光束侧的记录层125的上部和第一电介质层122-1的结晶结构和光学特性中的物理变化。
以下描述由显示接近可逆的物理变化的WOx制成的掩蔽层124。
当记录介质通过聚焦透镜(未示出)被具有从大约11mW的功率的激光源(未示出)发射出的大约405nm的波长的激光束照射以将记录介质125加热到600℃以上时，记录介质的激光照射的域变成非晶态并且在不管折射率n改变而具有降低的光学常数(n、k)的吸收系数k。在WOx掩蔽层的激光照射的域中，由于在其结晶结构和光学特性中的物理变化而产生等离子体振子，该物理变化作为在WOx掩蔽层中由4WO32W2O5+O2表示的可逆反应的结果而发生，从而发射具有比起始照射的激光束短的波长的光。另外，保护层124用作朝着记录层125的超分辨率近场。其结果是，可将作为比所使用的激光的衍射极限的尺寸小的微型标记而记录在记录介质上的信息再现。因此，使用这种超分辨率近场结构而不考虑所使用的激光的衍射极限可将记录在高密度记录介质中的信息再现。
图3是对于根据本发明的具有超分辨率近场结构的高密度介质和传统的具有超分辨率近场结构的高密度记录介质的载波与噪声的比(CNR)与标记长度的关系的曲线图。对于这两种高密度记录介质，405nm的激光束以11mW的功率通过具有0.65的数值孔径(NA)的透镜以3m/sec的速率射出以记录数据，并且相同的激光束但是以4mW的功率在与用于记录的相同的条件下射出以再现数据。参照图3中的结果，在40dB的CNR下，分辨率极限的标记长度对于具有AgOx掩蔽层的传统的超分辨率近场高密度记录介质是155.8nm，和对于根据本发明的具有WOx掩蔽层的超分辨率近场高密度记录介质是130nm。这个结果表明在相同条件下根据本发明的超分辨率近场高密度记录介质比传统的超分辨率近场高密度记录介质能够实现更高的高密度记录。
图4是对于根据本发明的超分辨率近场高密度记录介质和传统的具有超分辨率近场结构的高密度记录介质的噪声级别与标记长度的关系的曲线图。图4的结果是作为在与对于图3的结果的相同的条件下的实验结果而获得。从图4中清楚可知，具有AgOx掩蔽层的传统的超分辨率近场高密度记录介质的噪声级别是-65dBm，并且根据本发明的具有WOx掩蔽层的超分辨率近场高密度记录介质的噪声级别是-76dBm。这个结果表明根据本发明的超分辨率近场高密度记录介质提供比传统的超分辨率近场高密度记录介质更有效的噪声特性。
产业上的可利用性
通过根据本发明的具有高熔点的金属氧化物或氧化硅的掩蔽层的超分辨率近场高密度记录介质的情况下，改善了在再现期间的热稳定性和噪声特性。
Claims (5)
1、一种具有超分辨率近场结构的高密度记录介质包括依次堆叠的第二电介质层、记录层、保护层、掩蔽层、第一电介质层和聚碳酸酯层，其中掩蔽层包括高熔点金属氧化物或氧化硅以通过光或热诱导高熔点金属氧化物或氧化硅的结晶结构和光学特性中的物理变化来产生近场。
2、如权利要求1所述的高密度记录介质，其中，用于掩蔽层的高熔点金属氧化物是显示接近可逆的物理变化的WOx。
3、如权利要求1所述的高密度记录介质，其中，用于掩蔽层的高熔点金属氧化物是显示不可逆的物理变化的TaOx或AuOx。
4、如权利要求1所述的高密度记录介质，其中，用于掩蔽层的氧化硅是显示不可逆的物理变化的SiOx。
5、根据权利要求1至4的任何一项的高密度记录介质还包括在第二电介质层下方的包含银或铝的反射层。
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| JP2002281783A JP4221450B2 (ja) | 2002-09-26 | 2002-09-26 | 高融点金属酸化物又はシリコン酸化物のマスク層を用いる超解像度近接場構造の高密度記録媒体 |
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| KR100754166B1 (ko) * | 2004-05-17 | 2007-09-03 | 삼성전자주식회사 | 초해상 정보 저장매체 및 그 정보 기록 및/또는 재생기기 |
| EP1826758A1 (en) * | 2006-02-24 | 2007-08-29 | THOMSON Licensing | Optical multilayer storage medium using nanoparticles |
| CN100388374C (zh) * | 2006-06-30 | 2008-05-14 | 中国科学院上海光学精密机械研究所 | 一次记录式超分辨近场结构光盘 |
| CN101286005B (zh) * | 2007-04-10 | 2011-03-30 | 国家纳米科学中心 | 带有氧化物掩模的局域微缩光刻膜 |
| KR101536373B1 (ko) * | 2008-03-07 | 2015-07-13 | 톰슨 라이센싱 | 다중레벨 데이터 층을 포함하는 광학 저장 매체 |
| KR100978540B1 (ko) * | 2008-07-02 | 2010-08-27 | 연세대학교 산학협력단 | 플라즈모닉 소자가 적용된 후방 진행광 측정 장치 |
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| US6335908B1 (en) * | 1999-03-12 | 2002-01-01 | Sanyo Electric Co., Ltd. | Magneto optical recording medium with mask layer |
| WO2002035540A1 (fr) * | 2000-10-26 | 2002-05-02 | Fujitsu Limited | Support d'enregistrement magneto-optique, procede de reproduction et dispositif correspondant |
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| JP4221450B2 (ja) | 2009-02-12 |
| KR20050059190A (ko) | 2005-06-17 |
| TWI246080B (en) | 2005-12-21 |
| JP2004118945A (ja) | 2004-04-15 |
| EP1543505A1 (en) | 2005-06-22 |
| EP1543505A4 (en) | 2008-05-07 |
| AU2003263652A8 (en) | 2004-04-19 |
| TW200405326A (en) | 2004-04-01 |
| AU2003263652A1 (en) | 2004-04-19 |
| WO2004029936A1 (en) | 2004-04-08 |
| US7651793B2 (en) | 2010-01-26 |
| CN1685401A (zh) | 2005-10-19 |
| US20060147757A1 (en) | 2006-07-06 |
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