TWI246080B - High density recording media with super high resolution near field structure, having a mask layer of high melting point metal oxide or silicon oxide - Google Patents
High density recording media with super high resolution near field structure, having a mask layer of high melting point metal oxide or silicon oxide Download PDFInfo
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- TWI246080B TWI246080B TW092126300A TW92126300A TWI246080B TW I246080 B TWI246080 B TW I246080B TW 092126300 A TW092126300 A TW 092126300A TW 92126300 A TW92126300 A TW 92126300A TW I246080 B TWI246080 B TW I246080B
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- melting point
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- 238000002844 melting Methods 0.000 title claims abstract description 19
- 230000008018 melting Effects 0.000 title claims abstract description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 14
- 229910052814 silicon oxide Inorganic materials 0.000 title claims abstract description 13
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 11
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 11
- 230000008859 change Effects 0.000 claims abstract description 11
- 230000003287 optical effect Effects 0.000 claims abstract description 8
- 239000013078 crystal Substances 0.000 claims abstract description 7
- 229920000515 polycarbonate Polymers 0.000 claims abstract description 6
- 239000004417 polycarbonate Substances 0.000 claims abstract description 6
- 238000010438 heat treatment Methods 0.000 claims abstract 2
- 239000010410 layer Substances 0.000 claims description 87
- 239000011241 protective layer Substances 0.000 claims description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 238000010586 diagram Methods 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000004575 stone Substances 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 230000002427 irreversible effect Effects 0.000 claims description 2
- 241001674048 Phthiraptera Species 0.000 claims 2
- 239000002253 acid Substances 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 2
- 239000002904 solvent Substances 0.000 claims 2
- 229910003070 TaOx Inorganic materials 0.000 claims 1
- 239000000839 emulsion Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 1
- 230000000704 physical effect Effects 0.000 abstract 1
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 14
- 229910001923 silver oxide Inorganic materials 0.000 description 8
- 238000000034 method Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 4
- 230000002441 reversible effect Effects 0.000 description 4
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 229910000618 GeSbTe Inorganic materials 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 230000005374 Kerr effect Effects 0.000 description 1
- 241001465754 Metazoa Species 0.000 description 1
- LKJPSUCKSLORMF-UHFFFAOYSA-N Monolinuron Chemical compound CON(C)C(=O)NC1=CC=C(Cl)C=C1 LKJPSUCKSLORMF-UHFFFAOYSA-N 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- OTCVAHKKMMUFAY-UHFFFAOYSA-N oxosilver Chemical class [Ag]=O OTCVAHKKMMUFAY-UHFFFAOYSA-N 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B7/2433—Metals or elements of Groups 13, 14, 15 or 16 of the Periodic Table, e.g. B, Si, Ge, As, Sb, Bi, Se or Te
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B7/2578—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24312—Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24314—Metals or metalloids group 15 elements (e.g. Sb, Bi)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Description
"^JiI26300 气沐年（〇月。日 修正 Ί、 Γ 1246080 五、發明說明（1) 【發明所屬之技術領域】 赴八ί發：，關於高密度記錄媒•，特別是有關使用高融 密度記錄媒體。 每、、、口構的问 【先前技術】 以前的記錄體，大致可分成光磁記錄方式的記錄媒 體’及相位變化記錄方式的記錄媒體。光磁記錄方式的媒 體如MD(Mini disk)，為在磁性體射入直線偏光、，則資訊、 對應磁性體的磁場大小及磁場方向，其反射光利用迴轉°現 象之磁場的克爾效應之考慮再播出的記錄媒體。 相位變化記錄方式的記錄媒體，如DVD(digi tal v e r s a t i 1 e d i s k )，為利用記錄媒體的被記錄區域與非記 錄區域的非晶質與結晶質的結晶狀態產生的光常數的吸收 係數之差’發生的反射率之差進行重播的記錄媒體。 最近又有相位變化記錄方式的一種，利用微小記號記 錄媒體記錄資訊’再將記錄媒體記錄的資訊，在繞射界限 以下重播的種種方法。其中之最受注目的利用超解析度近 場結構的記錄方式’在1'Applied Physics Letters， V〇1.73，No· 15，Oct· 1 99 8π 及，，Japanese journal of applied Physics, Vol. 39, Part I, No. 2B, 2000, pp 98 0 -98 1中有說明。超解析度近場結構為使用特殊的罩 層，利用在罩層的局部表面電漿（plasmon)者。超解析度 近場結構’有用雷射光束使罩層變成透明的錄（S b )透過 型；及銀氧化物（AgOx)被分解成銀與氧，分解之銀在發生 局部電電漿的散亂源作用的銀氧化物分解型等多種。
12273pifl.ptc 第6頁 1246080 案號 92126300 修正 五、發明說明（2) 第1圖示利用先前的超解析度近場（super resolution n e a r f i e 1 d )結構的超解析度近場結構之高密度記錄媒體 之圖。 如第1圖所示，記錄媒體為由電介質體的第二電介質體 層1 12-2、如GeSbTe的記錄層1 15、具保護層功能的如ZnS一 SiOySiN之電介質體的保護層114、銻（Sb) /銀氧化物 (AgOx)的罩層113、如ZnS-Si02/SiN之電介質體的第一電介 貝體層1 1 2 -1、及透明的聚峻酸脂層1 1 1順次層積而成之結 構0 此處，罩層113為銻（Sb)之場合，保護層i14及第 介質體層112-1為SiN ;罩層113為銀氧化物（Ag〇x)之場 合，保護層114及第一電介質體層U2 —! gZnS-Si〇2。 又，保護層1 1 4，可防止記錄層丨丨5與罩層丨丨3的反應， 在資訊記錄的重播時當做超解析度近場的作用場所。^， 罩層113為録（Sb)之％合錄（Sb)成為透明；罩層jig為銀氧 化物之場合，銀氧化物（AgOx)被分解成銀與氧，被分解的 銀在發生局部電聚的散亂源作用。 由該記錄媒體之輸出能量約1 〇 - 1 5 rnW的雷射器（未圖 示）’發出的雷射光束用收縮透鏡（未圖示）收縮，向記錄 媒體照射，把記錄層11 5加熱至約6 0 〇 °c以上，將雷射光'束 照射之區域用非晶質變換’使光常數（nk)的吸收^數1^7°變 小與折射率η的變化無關。此時，雷射光束照射的罩層^3 的録（Sb)或不可還原的銀氧化物（Ag0x)，因銻（Sb)結曰晶之 變化’或不可還原的銀氧化物（Ag〇x)的分解發生電^ :散 亂源作用，產生較照射之光的波長更短的波导水 月
11246080 i 修正 一曰 -----塞9212fi.^nfl_?屮车/ 五、發明綱^ _ 保護層1 14記錄層1 1 5擔任超解析 .界限以下的微小記號的重播也=每之功能，因此，繞射 .媒體記錄的資m，在繞射界限以二即能夠將高密度記錄 但是，如上述的超解析度播。 轉移溫度相類似，所以，4近^=構，罩層與記錄層的 重要之問題。又，此種和紐:由貝机重播時熱安全性成為 佳。 σ 析度近場結構的雜訊特性不 【發明内容] 本發明為解決上述的問題，提 氧化物或石夕氧化物之罩層，記⑽^/使/ 金屬 雜訊特性優良的超解析度近場結構=性與 錄層Λ/的目的，本發明為由第二電介質體層，記 次層積的起^ ^層、弟一電介質體層’及聚碳酸脂層順 罩層的咼融點金氧化物或矽氧化物 、 f成垓 至屬虱化或矽氧化物的結晶構造變化 .“、占 發明即以利用該些物理性變化發生的近：：； =、，本 結構的高密度記錄媒體達成上述之目的。11 X近場 可形如成上Λ，/用高融點金屬氧化物切氧化物的罩層， 趙解ί ΐ媒體重播出時的熱安全性及雜訊特性優良的 超解析度近場結構之高密度記錄媒體。 的 物為為幾達丰成入上述之目的，本發明可利用該高融點金屬氧化 物為成手全部可逆性的WOx的超解析度近γ_ b 記錄媒體達成。 、％結構之南密度 i於使用幾乎全部可逆性的斷之 合屬…’ — --- 4 1246080 ----92126300 五、發明說明（4) _修正
%/〇 M 記錄媒體重播時’熱安全性及雜訊特性優良的 、斤度近場結構之高密度記錄媒體。 物為為非達τ成上述之目的，本發明可利用該高融點金屬氧化 記^^:二的^^或^^的超解析度近場結構之高密度 夠f由使用非可逆性的。〇或^〇义之高融點金屬氧化，能 解^ & π圯錄媒體重播時，熱安全性及雜訊特性優良的超 解祈度近場結構之高密度記錄媒體。 β 成上述之目的，本發明可利用該矽氧化物為非可 达性Si 0X的超解析度近場結構之高密度記錄媒體達成。 絲撤由酿於使用非可逆性的^以之石夕氧化物，能夠製成由記 二、二重播時，熱女全性及雜訊特性優良的超解析近場結 構之高密度記錄媒體。 、° 為達成上述之目的，本發明可利用在該第二電介質體 二=下ί配置銀（A g)或鋁（A1)的反射層之超解解析度近場 、、、°構之高密度記錄媒體達成。 由於在該第二電介質體層的下部配置銀（Ag)或鋁 =射層’可製成由記錄媒媒體重播肖，熱安全性及 ’優良的超解析度近場結構之高密度記錄媒體。' 為讓本發明之上述原理和其他目的、特徵和優點 明顯易懂，下文特舉一較佳實施例，並配合所附圖 詳細說明如下： π 【實施方式】
為實現達成上述目的及除去先前的問題，本發明 造及其^用，參考所附圖面說明如下.
12273pifl.ptc 第9頁 1246080 ' ：'· ..: -： < 1 隸 92126300 i、發明說明(5) 修正 第2圖示本發明實施例之超解 錄媒體之圖。 i解析度近場結構的高密度記 如第2圖所示，本發明之眚& ^ ^ μ ® 1 9 Q 々 、也例為配有銀（A g )或鋁（a 1 ) 的反射層1 2 8、記錄媒體為如Zs ^ ^ Μ 1 99 9 。勹戈乙心Sl〇2的電介質體的第二電 7 S S Π〜M 6的記錄層125,具保護功能的 二九2介質體的保護層124、罩層123、如W- 屏I:1貝體第—電介質體層122]，以及透明的 1石反酸知層1 2 1，順次層積之構造。 此處，罩層1 23是由為改善由記錄媒體重播出時的熱安 全性及雜訊特性之幾丰入α、、，t 榀u 逆性的W〇X之高融點金屬氧化 厘备几从u达符〖生的非可埂性的TaO或AuOx之高融點金 物中之一種形成特性的非可逆性的論之石夕氧化 保護層:24可防止記錄層m與罩層123的反應，在資訊 S己錄的播牯’、當做超解析度近場的作用場所。又，罩層 1 2 3在結晶構造變化及糸與牲卜 聚的散亂源作用。先子特性之物理性變化成為局部電 又具反射層之功能的銀（Ag )或鋁（a 1)的反射層1 2 8， 乃：、、、使田射光束照射之背面側的記錄層丨2 5及第二電介質 ，層1 2 2 - 2 ’亦如雷射光束照射側的記錄層} 2 5及第一電介 貝體層1 2 2 1同樣地產生結晶構造變化及光學特性變化等 之物理性變化而設。 以下之1明’假設罩層丨2 3為幾乎全可逆性的w〇 X。 由。亥。己錄媒體的具有波長約4 5 m及輸出功率約11 m⑺的
12273pifl.ptc 第10頁 曰身于A (： |圖τι〇丄發出的雷射光束在收縮透鏡（未圖示）收 !246080 五 案號 92126300 發明說明（6) 縮後向記錄媒體照射，將記錄層丨25加熱至約6〇 〇 把雷射光束照射之區域非晶質變換，使光 以上， 收係數k變小，不受其折射率〇變化之拘束。此j k)的吸 束照射的WOx之4WO3變化為2^〇5+〇2的可逆性，電射光 結晶構造變化及光學特性轡化犛舲饰w “ ' 弓I起的 」多正 ▼ δ - 〇 ' 史 ti BL Μ ^ p 結晶構造變化及光學特性變化等物理性變 :I起# 電 ，散亂源作用，產生較照射之光的波長更短的：J生 J。又，保二層124對記錄層125承擔·解析度 此。因此，繞射界限以下的微小記號也可重播，的功 向密記錄媒體的記錄資訊，在繞射界限以下卩施夠將 第3圖示記號長度與CNR(載波雜訊比）的關係。。 第3圖為在先前的超解析度近場結 用波長405nm、數值孔徑〇 65、乃於山冓的同4度圮媒體， 击 〇 / , · bb及輸出功率UmW的雷鼾氺 束，以3m/s的速度照射進行記錄，再 田射先 孔徑0· 65、及輸出功率4mW的雷射 / ^ ^、數值 行照射再生之結果的曲線。由該結先以^ 4〇dB，使用Ag〇x之罩層的超解柝 在CNR為 婵體之場人，觫；^声μ κ 斤又近％結構的高密度記錄 Λ二/ 限為記號長度155·8Κ曰使用 WOx的罩層之超解析度近場結構的高密度記 ^用 5，解析度的界限為記號長度13〇nm。因此可知體明 的超解析度近場結構的高密度本心月 度近場結構的高密度記錄媒體，=條；㈡的超解析 密度記錄。 ^ U樣條件下可以更高的 號長度與雜訊水準的相關曲線。 第4圖的貫驗條件與第3圖相同。 社 號長度13〇nm，在使ffiAg〇x的 二二=了知，在記 -；--------之超解析度近^結構的
12273pi fl.ptc
$ 11頁 _ 案號 9212630η 修正 五、發明說明（7) 高密度記錄媒體之場合， 使用_之罩層的超解析二…為-651 ^ 解析产ίΐίί "1。因此在同樣條件下本發明的超 特度近％結構的高密度記錄媒冑，更具優良的雜訊水準 發明效果 本發明使用高融點金屬氧化物或石夕氧化物之罩層，可 由記錄媒體再生時’熱安全性及雜訊特性優良的 ~解析度近場結構的高密度記錄媒體。 、雖然本發明已以一較佳實施例揭露如上，然其並非用 以限定本發明，任何熟習此技藝者，在不脫離本發明之精 神和範圍内，當可作些許之更動與潤飾，因此本發明之保 護範圍當視後附之申請專利範圍所界定者為準。
第12頁 1246080 __案號 92126:^00 圖式簡單說明 修正 【圖式之簡單說明】 第1圖示使用先前之超解析度近場結構的高密度記錄媒 體。 第2圖示本發明實施例之超解析度近場結構的高密度記 錄媒體。 第3圖示記號長度與載波雜訊比（CNR)的關係曲線。 第4圖示記號長度與雜訊水準的相關曲線。 【圖式之標示說明】 1 1 1、1 2 1聚碳酸脂層 112-1、122-1第一電介質體層 1 12-2、1 22-2第二電介質體層 113、123 罩層 i 1 4、1 2 4保護層 1 1 5、1 2 5記錄層 1 2 8反射層
12273pifl.ptc 第13頁
Claims (1)
1246080 -----1 號 92126300 六'、申明專利範圍 1 · 一種超解析度诉p _ 二電介質體厣、纪錄展每、、、°構向岔度記錄媒體，係由第 声、聚# _二^/ 、，亲層、保護層、罩層、第一電介質體 層I石反酸脂層順次層積構成； ；丨貝體 其特徵為，在該-π ψ人s ^ 層，利用因朵式献枯。至屬虱化物或矽氧化物的罩 曰構1先或…吏遠高融點金屬氧化物或矽氧化物的& 曰曰構k嫒化及光學特性 虱化物的釔 理性變化所發生的近場，化的物里…本發明利用該物 一夕如申請專利範圍第i項所述的超解 德、度記錄媒體’其特徵為該高融點金屬氧：物構的高 可逆性的w〇x。 生屬乳化物為幾乎全部 3.如申請專利範圍第1項所述的超解批声.斥4 尚密度記錄媒體，其特徵為該高融點斤又、二結構的 性的Ta〇x或Au〇x。 乳化物為非可逆 4·如申請專利範圍第1項所述的超解柄庚、β 高密度記錄媒體’其特徵為該矽氧 X ^場結構的 SiOx。 〜兩非可埂性的 5·如申請專利範圍第1項至第4項之任何一 解析度近場結構的高密度記錄媒體，其 、所述的超 介質體層的下部配置銀（Ag)或鋁（A1 ) ^反射層在該第二電
12273pifl.ptc 第14頁 1246080 SS 92126300 的超解析度近場結 構的體)(發明名稱··使用高融點金屬氧化物或石夕氧化物之軍層 本發明提供一種使用高融點金屬 罩層1超解析度近場結構的高密度記錄或矽氧化物之 電介質體層、記錄層、保護層、罩層、第二。在該由第二 聚碳酸脂層順次層積構成的超解析度近p:電介質體層及 錄媒體，對高融點金屬氧化物或矽氧化:=構的高密度記 熱使該高融點金屬氧化物或矽氧化物的处曰f層，用光或 學特性變化的物理性變化，該超解析度;;造變化及光 記錄媒體利用該物理性變化發生的近場。每…構的高密度 五、（一）、本案代表圖為··第____2____圖 (二）、本案代表圖之元件代表符號簡單說明· 121聚碳酸脂層122-1第一電介質體層· 1 23罩層124保護層125記錄層 ' ㈢ 122-2第二電介質體層128反射層 六、英文發明摘要~(發明名稱：HIGH DENSITY RECORDING MEDIA WITH SUPER RESOLUTION NEAR FIELD STRUCTURE, HAVING A MASK LAYER OF HIGH MELTING POINT METAL OXIDE OR SILICON OXIDE) The invention provides a high density recording media with a super high resolution near field structure, that contains: a second dielectric layer, a recording layer, a protection layer, a mask layer, a first dielectric layer, and a polycarbonate layer. Heating or lighting on the mask layer will change the crystal structure and optical characteristic of the high melting point
12273pifl.ptc 第3頁
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| Application Number | Priority Date | Filing Date | Title |
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| JP2002281783A JP4221450B2 (ja) | 2002-09-26 | 2002-09-26 | 高融点金属酸化物又はシリコン酸化物のマスク層を用いる超解像度近接場構造の高密度記録媒体 |
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| EP (1) | EP1543505A4 (zh) |
| JP (1) | JP4221450B2 (zh) |
| KR (1) | KR20050059190A (zh) |
| CN (1) | CN1316455C (zh) |
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| KR20050086305A (ko) * | 2004-02-25 | 2005-08-30 | 삼성전자주식회사 | 초해상 정보 저장매체 및 재생 신호 안정화 방법 |
| KR100754166B1 (ko) * | 2004-05-17 | 2007-09-03 | 삼성전자주식회사 | 초해상 정보 저장매체 및 그 정보 기록 및/또는 재생기기 |
| EP1826758A1 (en) * | 2006-02-24 | 2007-08-29 | THOMSON Licensing | Optical multilayer storage medium using nanoparticles |
| CN100388374C (zh) * | 2006-06-30 | 2008-05-14 | 中国科学院上海光学精密机械研究所 | 一次记录式超分辨近场结构光盘 |
| CN101286005B (zh) * | 2007-04-10 | 2011-03-30 | 国家纳米科学中心 | 带有氧化物掩模的局域微缩光刻膜 |
| JP5539905B2 (ja) * | 2008-03-07 | 2014-07-02 | トムソン ライセンシング | マルチレベルデータ層を含む光記憶媒体 |
| KR100978540B1 (ko) * | 2008-07-02 | 2010-08-27 | 연세대학교 산학협력단 | 플라즈모닉 소자가 적용된 후방 진행광 측정 장치 |
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| JP3967776B2 (ja) | 1997-09-18 | 2007-08-29 | 株式会社日立製作所 | 光記録媒体 |
| KR100525370B1 (ko) * | 1998-08-21 | 2005-12-27 | 엘지전자 주식회사 | 광 기록 매체 |
| JP2000285536A (ja) * | 1999-03-31 | 2000-10-13 | Sanyo Electric Co Ltd | 光磁気記録媒体 |
| US6335908B1 (en) * | 1999-03-12 | 2002-01-01 | Sanyo Electric Co., Ltd. | Magneto optical recording medium with mask layer |
| US20010015949A1 (en) | 1999-12-28 | 2001-08-23 | Toshihiko Nagase | Optical recording medium and recording-reproducing apparatus |
| JP2002025138A (ja) | 2000-07-13 | 2002-01-25 | National Institute Of Advanced Industrial & Technology | 光記録媒体および光記録再生装置 |
| TW513615B (en) * | 2000-07-24 | 2002-12-11 | Ritek Corp | Photolithography using a super-resolution near-field structure |
| US6767656B2 (en) * | 2000-10-26 | 2004-07-27 | Fujitsu Limited | Magneto-optical recording medium and method of reproducing the same |
| TW579045U (en) * | 2001-04-23 | 2004-03-01 | Ind Technology Res Inst Materi | Super-resolution recordable optical disk |
| JP4106417B2 (ja) * | 2002-05-16 | 2008-06-25 | 三星電子株式会社 | 高融点の記録層を有する記録媒体及びその記録媒体の情報記録方法、及びその記録媒体から情報を再生する情報再生装置及び情報再生方法 |
| US6896946B2 (en) * | 2002-06-06 | 2005-05-24 | Ritek Corporation | Initiation-free super-resolution optical medium |
| JP2004310803A (ja) * | 2003-04-01 | 2004-11-04 | Samsung Electronics Co Ltd | 超解像近接場構造の記録媒体、その再生方法及び再生装置 |
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| CN1316455C (zh) | 2007-05-16 |
| TW200405326A (en) | 2004-04-01 |
| EP1543505A4 (en) | 2008-05-07 |
| WO2004029936A1 (en) | 2004-04-08 |
| KR20050059190A (ko) | 2005-06-17 |
| JP2004118945A (ja) | 2004-04-15 |
| US7651793B2 (en) | 2010-01-26 |
| JP4221450B2 (ja) | 2009-02-12 |
| AU2003263652A1 (en) | 2004-04-19 |
| EP1543505A1 (en) | 2005-06-22 |
| US20060147757A1 (en) | 2006-07-06 |
| AU2003263652A8 (en) | 2004-04-19 |
| CN1685401A (zh) | 2005-10-19 |
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