CN1311100C - 清洁涂敷有有机物质的材料表面的方法以及用于执行所述方法的发生器和装置 - Google Patents

清洁涂敷有有机物质的材料表面的方法以及用于执行所述方法的发生器和装置 Download PDF

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Publication number
CN1311100C
CN1311100C CNB038041618A CN03804161A CN1311100C CN 1311100 C CN1311100 C CN 1311100C CN B038041618 A CNB038041618 A CN B038041618A CN 03804161 A CN03804161 A CN 03804161A CN 1311100 C CN1311100 C CN 1311100C
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China
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voltage
pulse
described material
band
coated
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Expired - Fee Related
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CNB038041618A
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English (en)
Chinese (zh)
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CN1633524A (zh
Inventor
丹尼尔·沙莱
帕特里克·肖凯
杰拉德·巴拉维恩
伯纳德·拉库尔
文森特·皮埃什
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USINOR SA
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USINOR SA
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32348—Dielectric barrier discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
  • Cleaning In General (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Plasma Technology (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CNB038041618A 2002-02-19 2003-02-19 清洁涂敷有有机物质的材料表面的方法以及用于执行所述方法的发生器和装置 Expired - Fee Related CN1311100C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR02/02047 2002-02-19
FR0202047A FR2836157B1 (fr) 2002-02-19 2002-02-19 Procede de nettoyage de la surface d'un materiau enduit d'une susbstance organique, generateur et dispositif de mise en oeuvre

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN200710085733XA Division CN101014222B (zh) 2002-02-19 2003-02-19 用于执行清洁涂敷有有机物质的材料表面的方法的发生器

Publications (2)

Publication Number Publication Date
CN1633524A CN1633524A (zh) 2005-06-29
CN1311100C true CN1311100C (zh) 2007-04-18

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Family Applications (2)

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CNB038041618A Expired - Fee Related CN1311100C (zh) 2002-02-19 2003-02-19 清洁涂敷有有机物质的材料表面的方法以及用于执行所述方法的发生器和装置
CN200710085733XA Expired - Fee Related CN101014222B (zh) 2002-02-19 2003-02-19 用于执行清洁涂敷有有机物质的材料表面的方法的发生器

Family Applications After (1)

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CN200710085733XA Expired - Fee Related CN101014222B (zh) 2002-02-19 2003-02-19 用于执行清洁涂敷有有机物质的材料表面的方法的发生器

Country Status (18)

Country Link
US (2) US7662237B2 (fr)
EP (1) EP1476588B1 (fr)
JP (2) JP4704686B2 (fr)
KR (1) KR100929538B1 (fr)
CN (2) CN1311100C (fr)
AT (1) ATE340278T1 (fr)
AU (1) AU2003238140B2 (fr)
BR (2) BRPI0307889B8 (fr)
CA (1) CA2476184C (fr)
DE (1) DE60308484T2 (fr)
ES (1) ES2273007T3 (fr)
FR (1) FR2836157B1 (fr)
MX (1) MXPA04007930A (fr)
PL (1) PL202796B1 (fr)
PT (1) PT1476588E (fr)
RU (1) RU2308546C2 (fr)
WO (1) WO2003078692A1 (fr)
ZA (1) ZA200406609B (fr)

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FR2865420B1 (fr) * 2004-01-28 2007-09-14 Saint Gobain Procede de nettoyage d'un substrat
EP1570921A1 (fr) * 2004-03-02 2005-09-07 Siemens Aktiengesellschaft Procédé pour le nettoyage par plasma d'une pièce
US20060246218A1 (en) * 2005-04-29 2006-11-02 Guardian Industries Corp. Hydrophilic DLC on substrate with barrier discharge pyrolysis treatment
AT502351A1 (de) * 2005-09-12 2007-03-15 Ziger Peter Anlage zur plasmaprozessierung von endlosmaterial
SK287455B6 (sk) * 2006-06-08 2010-10-07 Fakulta Matematiky, Fyziky A Informatiky Univerzity Komensk�Ho Zariadenie a spôsob čistenia, leptania, aktivácie a následné úpravy povrchu skla, povrchu skla pokrytého kysličníkmi kovov a povrchu iných materiálov pokrytých SiO2
JP2009032651A (ja) * 2007-06-26 2009-02-12 Panasonic Electric Works Co Ltd プラズマ処理装置
DE102007052573B4 (de) * 2007-11-03 2015-04-09 Manroland Web Systems Gmbh Feuchtwerk
US9168988B2 (en) * 2010-12-27 2015-10-27 Loch Stock and Barrel LLC Method of cleaning a rotating object
TWI463922B (zh) * 2011-03-09 2014-12-01 Creating Nano Technologies Inc 電漿產生裝置
US9638664B2 (en) * 2011-05-13 2017-05-02 Dbd Innovations Pty Ltd Method of analyzing a material
CN106660078B (zh) * 2014-06-05 2021-01-29 伊利诺斯工具制品有限公司 用于清洁物体的系统和方法
CN104342714B (zh) * 2014-10-22 2016-08-24 河北大学 一种去除不锈钢表面氧化皮的方法
US10722925B2 (en) * 2017-12-04 2020-07-28 Suss Micro Tec Photomask Equipment Gmbh & Co Kg Treatment head, treatment system and method for treating a local surface area of a substrate
RU2739195C1 (ru) * 2020-04-07 2020-12-21 Общество С Ограниченной Ответственностью "Нтц Тонкопленочных Технологий В Энергетике" Вакуумная напылительная установка с системой лазерной очистки паллет (варианты)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5938854A (en) * 1993-05-28 1999-08-17 The University Of Tennessee Research Corporation Method and apparatus for cleaning surfaces with a glow discharge plasma at one atmosphere of pressure
US5968377A (en) * 1996-05-24 1999-10-19 Sekisui Chemical Co., Ltd. Treatment method in glow-discharge plasma and apparatus thereof
WO2001040359A1 (fr) * 1999-12-02 2001-06-07 Dow Corning Limited Traitement de surface d'un materiau polymere organique
CN2455368Y (zh) * 2000-12-13 2001-10-24 广州市环境保护设备厂 一种油烟净化装置

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JPS5944797A (ja) * 1982-09-07 1984-03-13 増田　閃一 物体の静電的処理装置
DE3322341A1 (de) * 1983-06-22 1985-01-03 Siegfried Dr.-Ing. 5135 Selfkant Strämke Verfahren und vorrichtung zur oberflaechenbehandlung von werkstuecken durch glimmentladung
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US5443998A (en) * 1989-08-01 1995-08-22 Cypress Semiconductor Corp. Method of forming a chlorinated silicon nitride barrier layer
JP2811820B2 (ja) * 1989-10-30 1998-10-15 株式会社ブリヂストン シート状物の連続表面処理方法及び装置
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DE4332866C2 (de) * 1993-09-27 1997-12-18 Fraunhofer Ges Forschung Direkte Oberflächenbehandlung mit Barrierenentladung
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JP3391245B2 (ja) * 1997-12-30 2003-03-31 株式会社島津製作所 薄膜形成装置
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Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5938854A (en) * 1993-05-28 1999-08-17 The University Of Tennessee Research Corporation Method and apparatus for cleaning surfaces with a glow discharge plasma at one atmosphere of pressure
US5968377A (en) * 1996-05-24 1999-10-19 Sekisui Chemical Co., Ltd. Treatment method in glow-discharge plasma and apparatus thereof
WO2001040359A1 (fr) * 1999-12-02 2001-06-07 Dow Corning Limited Traitement de surface d'un materiau polymere organique
CN2455368Y (zh) * 2000-12-13 2001-10-24 广州市环境保护设备厂 一种油烟净化装置

Also Published As

Publication number Publication date
BR0307889A (pt) 2004-12-28
JP2010031377A (ja) 2010-02-12
PL202796B1 (pl) 2009-07-31
BR122012007163B1 (pt) 2015-08-11
RU2004127920A (ru) 2005-06-10
ES2273007T3 (es) 2007-05-01
FR2836157B1 (fr) 2004-04-09
US9502214B2 (en) 2016-11-22
FR2836157A1 (fr) 2003-08-22
US20090255809A1 (en) 2009-10-15
DE60308484T2 (de) 2007-05-24
AU2003238140A1 (en) 2003-09-29
ZA200406609B (en) 2005-08-31
CN101014222A (zh) 2007-08-08
CA2476184A1 (fr) 2003-09-25
KR100929538B1 (ko) 2009-12-03
CA2476184C (fr) 2010-02-09
KR20040084923A (ko) 2004-10-06
MXPA04007930A (es) 2004-11-26
CN1633524A (zh) 2005-06-29
PT1476588E (pt) 2006-12-29
EP1476588B1 (fr) 2006-09-20
PL370588A1 (en) 2005-05-30
BRPI0307889B8 (pt) 2017-03-28
JP2005526181A (ja) 2005-09-02
RU2308546C2 (ru) 2007-10-20
JP4704686B2 (ja) 2011-06-15
CN101014222B (zh) 2010-11-03
ATE340278T1 (de) 2006-10-15
DE60308484D1 (de) 2006-11-02
WO2003078692A1 (fr) 2003-09-25
US7662237B2 (en) 2010-02-16
BR0307889B1 (pt) 2012-11-27
US20050145174A1 (en) 2005-07-07
AU2003238140B2 (en) 2008-05-01
EP1476588A1 (fr) 2004-11-17

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