CN1310071A - 测量焊接参数用的压电传感器 - Google Patents

测量焊接参数用的压电传感器 Download PDF

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CN1310071A
CN1310071A CN01103835A CN01103835A CN1310071A CN 1310071 A CN1310071 A CN 1310071A CN 01103835 A CN01103835 A CN 01103835A CN 01103835 A CN01103835 A CN 01103835A CN 1310071 A CN1310071 A CN 1310071A
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electrode
piezoelectric
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CN1135145C (zh
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陈王丽华
赵小珊
柯少荣
张耀明
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Hong Kong Polytechnic University HKPU
ASM Assembly Automation Ltd
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ASM Assembly Automation Ltd
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Abstract

超声波焊接装置的传感器包括一个位于焊接装置中超声换能器和超声聚能器之间的压电材料,该传感器至少有二个输出端可测量不同的焊接参数,选择输出信号以便对所述焊接参数有较佳信号响应。

Description

测量焊接参数用的压电传感器
本发明涉及一种压电传感器,可供集成电路中的元件焊接时测量焊接参数,如冲击力、超声振幅和焊接时间。本发明还将应用范围扩大到包括这种传感器的超声焊接装置。
在微电子产品和集成电路制造中,焊接是一种机械工艺,它用金属焊丝(如铝丝、金丝或铜丝)在二个元件(如集成电路元件和印刷电路板)之中产生电连接。焊接工艺一般包括两个阶段。在第一阶段,超声焊接装置下降到接触垫片上并使焊丝预先变形。随后在第二阶段,焊接装置发出一串超声能。在第二阶段中,焊接装置发生振动,焊头开始与焊丝一同运动并去除表面上不能粘结的氧化层(如果有的话)。然后在吸收了超声能和压力之后,焊丝变形并且在焊丝与垫片的界面形成的冶金结合。
在这两阶段中有必须监测的参数。第一阶段需要测量和监视冲击力及跟着发生的作用到焊丝的力,以保证焊接质量。在第二阶段中超声脉冲串的幅度及持续时间(叫做焊接时间)都对焊接质量有重大影响,因而必须予以监控。能保证要求质量的焊接参数的最佳范围通常由每种焊接机确定的,但为了确保这些参数在该范围内必须对它们进行监控。
美国专利US 4,854,494描述一种用压电传感器监测焊接参数的方法,这种传感器附着在超声聚能器上来测量超声振幅,并用应变片来监测粘结力。但在这种结构中,监测焊接参数需要两个单独的传感器。
美国专利US 4,040,885描述一种装置,它通过对焊头在自由振动(无载荷)状态和在焊接作业时的振幅进行比较实现超声焊接系统焊接质量的无损监测。
本发明的目的在于提供一种单一装置来测量焊接参数并使其成为超声焊接装置的一个组成部分,因而很方便将其从一台焊接装置传到另一台中。
根据本发明所提供的传感器能用于测量超声焊接作业时的焊接参数,该传感器包括的压电材料,其位于超声焊接装置的超声换能器旁,该传感器的第一输出端用于感测一个或一个以上第一焊接参数,第二输出端用于感测一个或一个以上的第二焊接参数。
用这种方法,一个传感器即能同时测量许多焊接参数。此外由于将传感器放在超声换能器旁,传感器可与焊接装置形成一体,因此可随焊接装置从一台焊机搬到另一台上。此外由于不同参数有不同的信号输出,因此对不同的被测参数其输出信号的响应可以优化。
本发明的一个优选实施例中,第一输出端用于感测冲击力而第二输出端用于感测超声振幅和焊接时间。第一输出端最好包括一对电极,其方位平行于焊头运动方向相同的施加冲击力方向,而第二输出端包括一对电极的方位与施加的冲击力的方向相垂直。
电极可以用于单块压电材料上。这块压电材料一般是环形而电极以90°间隔配置在压电材料四周。但压电材料也可呈其它形状,如方形或矩形。
提供的信号处理装置用于处理从第一及第二输出端输出的信号,它有使二个信号分开的器具。信号处理器可以包括从第一信号输出端输出信号的低通滤波器及从第二信号输出端输出信号的高通滤波器和谐波滤波器。信号处理器还包括信号放大器。
还应明白,本发明可将应用范围扩大到包括这种传感器的焊接装置,因此从更广的角度看,本发明提供的超声焊接装置,它包括超声换能器和超声聚能器,该装置还包括传感器,其压电材料位于上述换能器旁,该传感器的第一输出端用于感测一个或一个以上第一焊接参数,而第二输出端用于感测一个或一个以上的第二焊接参数。
现在通过实力并参看附图来描述本发明的一个实施例,附图中:
图1是装有根据本发明实施例所描述传感器的超声波焊接装置的局部分解透视图。
图2是焊接装置与系统的其它部件连接的原理图。
图3是传感器的横剖面图。
图4是传感器第一输出信号示意图。
图5是传感器第二输出信号示意图。
先参看图1,图上示出装上根据本发明一个优选实施例所述传感器5的超声波焊接装置。此焊接装置9包括安装用凸缘1,超声换能器2,超声聚能器3和焊头4,焊头4可做成毛细管形或楔形。超声换能器2可以是压电式郎元万(Langevin)形夹层换能器,但也可用技术上已知的任何一种适用的换能器。换能器2用来产生超声频率振动,在驱动焊头4之前其超声频率被聚能器3扩大。如上所述,焊接装置是传统的。
但在本发明的这一实施例中,传感器5成为焊接装置9的组成部分且位于换能器2和聚能器3的中间。如图2所示,焊接装置9使用时换能器2接收超声信号发生器10的输出信号,而传感器5的输出信号(下面详述)首先输送给放大器11a、11b和低通及高通滤波器12、13,其输送方式下面说明,然后在穿过另外放大器15、16后输送给计算机14。如下所述,传感器5的输出信号可用于监测重要的焊接参数并向超声信号发生器10提供控制反馈信号。特别是计算机14可储存一组对各焊接参数可以接受的数据,并可使测得的焊接参数与这组数据比较。当测得参数与这组可接受的数据范围不同时,便产生控制反馈信号使它们回到这组数据范围内。
如图3所示,传感器5包括个圆环形压电材料(任何适用压电材料均可以),其上用任何适当方法(如共同烧结、电镀、喷镀、蒸涂、电化学淀积)附着两对电极20、21。第一对电极20竖直配置,因此它们在于焊头4平行的直线上。第二对电极21水平配置,即与焊头4垂直。传感器背侧有一共同的接地平面,因而每对电极20、21可对其发送输出信号,输出信号被收集。图4示出从第一、即垂直的电极对20发出的典型输出信号,而图5示出从第二、即水平电极对21发出的典型输出信号。
两对电极20、21用于感测不同的参数。垂直的那对电极20感测冲击力,这些电极对由于焊头4与焊到接触垫片的焊丝的接触引起的焊接装置9的弯曲运动比较敏感,因为它们竖直地与焊头4平行。图4示出这些电极的典型输出信号,信号可来自电极对20的上面一个电极或下面一个电极。水平配置的第二电极对21用于测量超声振幅及焊接时间。
图4示出第一对电极20的典型输出信号,可以看到一当焊头4接触焊丝并开始使焊丝对着接触垫片发生变形,即可发现信号(图上水平轴5ms左右开始有信号)。此信号的幅度可用于确定冲击力。该信号还示出以后加上超声脉冲串时的连续均匀的响应,与此对比,图5示出水平配置的第二电极对21的典型信号。可以注意到,这对电极的输出信号在焊头4与表面接触时,只显示很小的信号,这是因为这些电极与焊头4垂直配置因而不易发现接触时焊接装置9的弯曲运动。但第二对电极21随着超声脉冲串而有较强较清楚的信号而这一传感器电极对用于测量超声脉冲串的振幅和焊接时间。
回来参看图2,第一电极对20的输出信号送到放大器11a,然后到低通(如4KHz)滤波器12以消除超声波振动,然后被放大器15放大,如上所述,这一信号可用于确定冲击力,另一方面,第二电极对21的信号被放大器11b放大后,通向高通滤波器13,有时是谐波滤波器17,然后到放大器16,该信号用于测量超声振幅和焊接时间。
应当明白,也可用其它电极结构,本发明不局限于图3所示的那种结构。例如,可以用多个电极,随后均分以提供输出信号。电极也可做成实心的扇形体,分布在环形压电材料圆周上。许多结构是业内人士容易明了的。重要的是竖直定位的电极的方向平行于焊头4,所提供的输出信号用于测量冲击力,而水平电位电极与焊头4垂直,用于测量超声振幅和焊接时间。
在上述实施例中,二个电极对形成在同一块压电材料上,但应明白,压电元件可分成两块,每块上支承着一对相应的电极。

Claims (21)

1.一种测量超声波焊接作业的焊接参数用的传感器,该传感器包括位于超声焊接装置的超声换能器旁的压电材料,该传感器有感测一个或一个以上第一焊接参数的第一输出端,和感测一个或一个以上的第二焊接参数的第二输出端。
2.如权利要求1所述的传感器,其中所说的第一输出端用于感测冲击力,而第二输出端用于感测超声振幅和焊接时间。
3.如权利要求2所述的传感器,其中所说的第一输出端包括第一对电极,其方位平行于施加的冲击力的方向,而所说的第二输出端包括一对电极,其方位与施加的冲击力的方向垂直。
4.如权利要求3所述的传感器,其中所说的电极作用到单块压电材料上。
5.如权利要求4所述的传感器,其中所说的压电材料通常呈环形且所说电极以一定间隔配置在该压电材料周围。
6.如权利要求5所述的传感器,其中所说的电极以90°
7.如权利要求1所述的传感器还包括信号处理装置,用于处理上述第一及第二输出端输出的信号,该信号处理装置包括使两种信号分离开的装置。
8.如权利要求7所述的传感器,其中信号处理装置包括一低通滤波器,用于处理从上述第一信号输出端输出的信号。
9.如权利要求7所述的传感器,其中信号处理装置包括一高通滤波器和一谐波滤波器装置,用于处理从上述第二信号输出端输出的信号。
10.如权利要求7所述的传感器,其中所述的信号处理装置包括信号放大装置。
11.超声焊接装置包括一超声换能器和一超声聚能器,该装置还包括一传感器,此传感器包括位于上述换能器旁的压电材料,该传感器有感测一个或一个以上第一焊接参数的第一输出端,和感测一个或一个以上的第二焊接参数的第二输出端。
12.如权利要求11所述的装置,其中所述第一输出端用于感测冲击力,而所述第二输出端用于感测超声波持续时间和振幅。
13.如权利要求12所述的装置,其中所述的一输出端包括一对电极,其方位平行于施加的冲击力的方向,且其中所述第二输出端包括一对电极,其方位垂直于施加的冲击力的方向。
14.如权利要求13所述的装置,其中所述电极作用到单块压电材料上。
15.如权利要求14所述的装置,其中所述的压电材料通常是圆环形且所述电极以一定间隔配置在上述压电材料周围。
16.如权利要求15所述的装置,其中所述的电极以90°
17.如权利要求11所述的装置,还包括信号处理装置,用于处理从上述第一和第二输出端输出的信号,该信号处理装置包括将两种信号分离开的装置。
18.如权利要求16所述的装置,其中信号处理装置包括一个用于处理从第一信号输出端输出的信号用的低通滤波器。
19.如权利要求16所述的装置,其中信号处理装置包括一个高通滤波器和一谐波滤波器装置,用于处理从上述第二信号输出端输出的信号。
20.如权利要求16所述的装置,其中所述信号处理装置包括信号放大装置。
21.如权利要求11所述的装置还包括计算装置,该计算装置包括储存要求的焊接参数的装置,将测得的参数与要求的参数作比较的装置和发生反馈控制信号的装置。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107407576A (zh) * 2015-01-13 2017-11-28 哈金森公司 感应式移动传感器
CN115446427A (zh) * 2022-10-19 2022-12-09 中建安装集团有限公司 一种适用于中薄壁结构的双面焊接装置及方法

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6425514B1 (en) * 1999-11-10 2002-07-30 Asm Technology Singapore Pte Ltd Force sensing apparatus
TW521358B (en) * 2000-09-22 2003-02-21 Asm Tech Singapore Pte Ltd A method of bonding wires
US6644533B2 (en) * 2001-07-03 2003-11-11 Asm Technology Singapore Pte. Ltd. Force sensing apparatus
JP2003223275A (ja) * 2001-11-22 2003-08-08 Omron Corp 入力装置
KR20030066344A (ko) * 2002-02-01 2003-08-09 에섹 트레이딩 에스에이 와이어본더로 접합시에 최적의 접합 파라미터들을결정하기 위한 방법
JP2004047944A (ja) * 2002-05-22 2004-02-12 Nec Corp 接合装置および接合の良否判別方法を有する接合方法
DE102004026826B4 (de) * 2004-05-28 2010-01-14 Schunk Ultraschalltechnik Gmbh Ultraschallschweißvorrichtung und Konverter einer Ultraschallschweißvorrichtung
DE102004045575A1 (de) 2004-09-17 2006-04-06 Hesse & Knipps Gmbh Ultraschalltransducer mit einem in der Lagerung angeordneten Sensor
JP4825029B2 (ja) 2006-03-17 2011-11-30 富士通セミコンダクター株式会社 ボンディング装置及びボンディング方法
JP4679454B2 (ja) * 2006-07-13 2011-04-27 株式会社新川 ワイヤボンディング装置
EP1897648B1 (en) * 2006-09-05 2010-06-30 Technische Universität Berlin Method and device for controlling the generation of ultrasonic wire bonds
US7612895B2 (en) * 2007-05-18 2009-11-03 Suss Microtec Inc Apparatus and method for in-situ monitoring of wafer bonding time
JP4314313B1 (ja) * 2008-06-30 2009-08-12 株式会社新川 ボンディング装置
TW201416140A (zh) 2012-10-31 2014-05-01 Ind Tech Res Inst 可撓式超音波致動裝置
DE102018120124A1 (de) * 2018-08-17 2020-02-20 Herrmann Ultraschalltechnik Gmbh & Co. Kg Ultraschallschwingeinrichtung mit Piezosensor
US11691214B2 (en) * 2021-10-17 2023-07-04 Shinkawa Ltd. Ultrasound horn
US11798911B1 (en) * 2022-04-25 2023-10-24 Asmpt Singapore Pte. Ltd. Force sensor in an ultrasonic wire bonding device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3794236A (en) * 1973-05-07 1974-02-26 Raytheon Co Monitoring and control means for evaluating the performance of vibratory-type devices
GB1506164A (en) * 1974-07-09 1978-04-05 Mullard Ltd Ultrasonic bonding apparatus
US4341574A (en) * 1980-08-25 1982-07-27 Texas Instruments Incorporated Ultrasonic bond energy monitor
US4597519A (en) * 1984-02-27 1986-07-01 Fairchild Camera & Instrument Corporation Lead wire bonding with increased bonding surface area
DE3701652A1 (de) * 1987-01-21 1988-08-04 Siemens Ag Ueberwachung von bondparametern waehrend des bondvorganges
US5428995A (en) * 1993-03-08 1995-07-04 Litton Systems, Inc. Counterbalanced vibratory triaxial angular rate sensor with open loop output
US5326968A (en) * 1993-03-12 1994-07-05 Honeywell Inc. Photoelectric sensor with a circular polarizing lens attached to its housing
US5504424A (en) * 1993-05-28 1996-04-02 Durakool, Inc. Variable reluctance sensor utilizing a magnetic bobbin
US5592078A (en) * 1994-11-29 1997-01-07 Dapco Industries, Inc. Method and apparatus for moving along a boundary between electromagnetically different materials
EP0783105A4 (en) * 1995-07-21 1998-12-02 Matsushita Electric Ind Co Ltd MAGNETIC ROTATIONAL SPEED SENSOR
JP3086158B2 (ja) * 1995-07-26 2000-09-11 株式会社日立製作所 超音波ボンディング方法
JPH09119943A (ja) * 1995-10-24 1997-05-06 Wako:Kk 加速度センサ
US5607096A (en) * 1996-03-11 1997-03-04 National Semiconductor Corporation Apparatus and method for ultrasonic bonding lead frames and bonding wires in semiconductor packaging applications

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107407576A (zh) * 2015-01-13 2017-11-28 哈金森公司 感应式移动传感器
CN107407576B (zh) * 2015-01-13 2019-11-12 哈金森公司 感应式移动传感器
CN115446427A (zh) * 2022-10-19 2022-12-09 中建安装集团有限公司 一种适用于中薄壁结构的双面焊接装置及方法
CN115446427B (zh) * 2022-10-19 2023-12-12 中建安装集团有限公司 一种适用于中薄壁结构的双面焊接装置及方法

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