CN1299166C - 使用双波长形成自动对准图案的方法 - Google Patents

使用双波长形成自动对准图案的方法 Download PDF

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Publication number
CN1299166C
CN1299166C CNB038025280A CN03802528A CN1299166C CN 1299166 C CN1299166 C CN 1299166C CN B038025280 A CNB038025280 A CN B038025280A CN 03802528 A CN03802528 A CN 03802528A CN 1299166 C CN1299166 C CN 1299166C
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CN
China
Prior art keywords
radiation
photoresist
wavelength
layer
lithographic
Prior art date
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Expired - Fee Related
Application number
CNB038025280A
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English (en)
Chinese (zh)
Other versions
CN1620634A (zh
Inventor
U·奥科罗安彦乌
A·C·博泰利
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GlobalFoundries Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of CN1620634A publication Critical patent/CN1620634A/zh
Application granted granted Critical
Publication of CN1299166C publication Critical patent/CN1299166C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CNB038025280A 2002-02-27 2003-02-21 使用双波长形成自动对准图案的方法 Expired - Fee Related CN1299166C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/083,914 US6764808B2 (en) 2002-02-27 2002-02-27 Self-aligned pattern formation using wavelenghts
US10/083,914 2002-02-27

Publications (2)

Publication Number Publication Date
CN1620634A CN1620634A (zh) 2005-05-25
CN1299166C true CN1299166C (zh) 2007-02-07

Family

ID=27753386

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB038025280A Expired - Fee Related CN1299166C (zh) 2002-02-27 2003-02-21 使用双波长形成自动对准图案的方法

Country Status (9)

Country Link
US (1) US6764808B2 (enExample)
EP (1) EP1478978B1 (enExample)
JP (1) JP2005519456A (enExample)
KR (1) KR20040094706A (enExample)
CN (1) CN1299166C (enExample)
AU (1) AU2003211152A1 (enExample)
DE (1) DE60329371D1 (enExample)
TW (1) TWI278013B (enExample)
WO (1) WO2003073165A2 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10138105A1 (de) * 2001-08-03 2003-02-27 Infineon Technologies Ag Fotolack und Verfahren zum Strukturieren eines solchen Fotolacks
US7501230B2 (en) * 2002-11-04 2009-03-10 Meagley Robert P Photoactive adhesion promoter
DE10309266B3 (de) * 2003-03-04 2005-01-13 Infineon Technologies Ag Verfahren zum Bilden einer Öffnung einer Licht absorbierenden Schicht auf einer Maske
DE10310781A1 (de) * 2003-03-12 2004-09-30 Infineon Technologies Ag Verfahren zum Betreiben eines Mikroprozessors und eine Mikroprozessoranordnung
US7265366B2 (en) * 2004-03-31 2007-09-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2006085741A1 (en) * 2005-02-09 2006-08-17 Stichting Dutch Polymer Institute Process for preparing a polymeric relief structure
US7816072B2 (en) * 2005-05-02 2010-10-19 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition and method for forming resist pattern
US20070166649A1 (en) * 2006-01-18 2007-07-19 Cheng-Hung Yu Method of forming a micro device
CN100465666C (zh) * 2006-01-24 2009-03-04 联华电子股份有限公司 微元件制作方法
JP2007287928A (ja) * 2006-04-17 2007-11-01 Nec Electronics Corp 半導体集積回路およびその製造方法ならびにマスク
JP4660826B2 (ja) * 2006-08-18 2011-03-30 山栄化学株式会社 レジストパターンの形成方法
US7863150B2 (en) * 2006-09-11 2011-01-04 International Business Machines Corporation Method to generate airgaps with a template first scheme and a self aligned blockout mask
KR101023077B1 (ko) * 2008-10-27 2011-03-24 주식회사 동부하이텍 마스크 패턴 형성 방법
JP6321189B2 (ja) 2014-01-27 2018-05-09 東京エレクトロン株式会社 パターン化膜の臨界寸法をシフトするシステムおよび方法
WO2016025210A1 (en) 2014-08-13 2016-02-18 Tokyo Electron Limited Critical dimension control in photo-sensitized chemically-amplified resist
US11294273B2 (en) * 2019-10-25 2022-04-05 Innolux Corporation Mask substrate and method for forming mask substrate

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4704347A (en) * 1985-02-18 1987-11-03 U.S. Philips Corporation Method of manufacturing a semiconductor device, in which a photolacquer mask is formed by means of a two-layer lacquer system.
US4810601A (en) * 1984-12-07 1989-03-07 International Business Machines Corporation Top imaged resists
EP0366503A2 (en) * 1988-10-28 1990-05-02 Hewlett-Packard Company Chemical compositions for improving photolithographic performance
US5180655A (en) * 1988-10-28 1993-01-19 Hewlett-Packard Company Chemical compositions for improving photolithographic performance
JPH0842365A (ja) * 1994-07-28 1996-02-13 Toyota Motor Corp セラミックス製バタフライ弁およびその製造方法
US6100010A (en) * 1998-02-23 2000-08-08 Sharp Kabushiki Kaisha Photoresist film and method for forming pattern thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0098922A3 (en) 1982-07-13 1986-02-12 International Business Machines Corporation Process for selectively generating positive and negative resist patterns from a single exposure pattern
JPH09319097A (ja) * 1996-01-16 1997-12-12 Sumitomo Chem Co Ltd レジストパターンの形成方法
FR2812450B1 (fr) * 2000-07-26 2003-01-10 France Telecom Resine, bi-couche de resine pour photolithographie dans l'extreme ultraviolet (euv) et procede de photolithogravure en extreme ultraviolet (euv)
US7223227B2 (en) 2002-05-13 2007-05-29 Pflueger D Russell Spinal disc therapy system

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4810601A (en) * 1984-12-07 1989-03-07 International Business Machines Corporation Top imaged resists
US4704347A (en) * 1985-02-18 1987-11-03 U.S. Philips Corporation Method of manufacturing a semiconductor device, in which a photolacquer mask is formed by means of a two-layer lacquer system.
EP0366503A2 (en) * 1988-10-28 1990-05-02 Hewlett-Packard Company Chemical compositions for improving photolithographic performance
US5180655A (en) * 1988-10-28 1993-01-19 Hewlett-Packard Company Chemical compositions for improving photolithographic performance
JPH0842365A (ja) * 1994-07-28 1996-02-13 Toyota Motor Corp セラミックス製バタフライ弁およびその製造方法
US6100010A (en) * 1998-02-23 2000-08-08 Sharp Kabushiki Kaisha Photoresist film and method for forming pattern thereof

Also Published As

Publication number Publication date
KR20040094706A (ko) 2004-11-10
JP2005519456A (ja) 2005-06-30
DE60329371D1 (de) 2009-11-05
WO2003073165A2 (en) 2003-09-04
US6764808B2 (en) 2004-07-20
US20030162135A1 (en) 2003-08-28
TWI278013B (en) 2007-04-01
CN1620634A (zh) 2005-05-25
WO2003073165A3 (en) 2003-10-16
EP1478978B1 (en) 2009-09-23
EP1478978A2 (en) 2004-11-24
TW200303573A (en) 2003-09-01
AU2003211152A1 (en) 2003-09-09

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