CN1297000C - 包含应力调节覆盖层的互连结构及其制造方法 - Google Patents
包含应力调节覆盖层的互连结构及其制造方法 Download PDFInfo
- Publication number
- CN1297000C CN1297000C CNB031784194A CN03178419A CN1297000C CN 1297000 C CN1297000 C CN 1297000C CN B031784194 A CNB031784194 A CN B031784194A CN 03178419 A CN03178419 A CN 03178419A CN 1297000 C CN1297000 C CN 1297000C
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- China
- Prior art keywords
- stress
- interconnection structure
- layer
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- Expired - Fee Related
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
- H01L23/53295—Stacked insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (43)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/218,292 | 2002-08-14 | ||
US10/218,292 US6617690B1 (en) | 2002-08-14 | 2002-08-14 | Interconnect structures containing stress adjustment cap layer |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1477705A CN1477705A (zh) | 2004-02-25 |
CN1297000C true CN1297000C (zh) | 2007-01-24 |
Family
ID=27788771
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB031784194A Expired - Fee Related CN1297000C (zh) | 2002-08-14 | 2003-07-16 | 包含应力调节覆盖层的互连结构及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6617690B1 (zh) |
JP (1) | JP4045216B2 (zh) |
KR (1) | KR100497580B1 (zh) |
CN (1) | CN1297000C (zh) |
TW (1) | TWI222170B (zh) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002017374A1 (en) * | 2000-08-18 | 2002-02-28 | Tokyo Electron Limited | Low-dielectric silicon nitride film and method of forming the same, semiconductor device and fabrication process thereof |
JP4005873B2 (ja) * | 2002-08-15 | 2007-11-14 | 株式会社東芝 | 半導体装置 |
US6958542B2 (en) * | 2002-09-03 | 2005-10-25 | Kabushiki Kaisha Toshiba | Semiconductor device |
US7253524B2 (en) * | 2003-11-25 | 2007-08-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Copper interconnects |
US7005724B2 (en) * | 2004-02-13 | 2006-02-28 | Agere Systems Inc. | Semiconductor device and a method of manufacture therefor |
US7193325B2 (en) * | 2004-04-30 | 2007-03-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reliability improvement of SiOC etch with trimethylsilane gas passivation in Cu damascene interconnects |
US7141503B2 (en) * | 2004-06-25 | 2006-11-28 | Ami Semiconductor, Inc | Methods for manufacturing a soft error and defect resistant pre-metal dielectric layer |
DE102004042168B4 (de) * | 2004-08-31 | 2009-08-20 | Advanced Micro Devices, Inc., Sunnyvale | Halbleiterelement mit einem Metallisierungsschichtstapel mit kleinem ε mit erhöhter Widerstandsfähigkeit gegen Elektromigration und Verfahren zum Bilden des Halbleiterelements |
US7638859B2 (en) | 2005-06-06 | 2009-12-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Interconnects with harmonized stress and methods for fabricating the same |
US7462527B2 (en) * | 2005-07-06 | 2008-12-09 | International Business Machines Corporation | Method of forming nitride films with high compressive stress for improved PFET device performance |
JP5096669B2 (ja) | 2005-07-06 | 2012-12-12 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置の製造方法 |
US7563704B2 (en) * | 2005-09-19 | 2009-07-21 | International Business Machines Corporation | Method of forming an interconnect including a dielectric cap having a tensile stress |
US20070080455A1 (en) * | 2005-10-11 | 2007-04-12 | International Business Machines Corporation | Semiconductors and methods of making |
US20070155186A1 (en) * | 2005-11-22 | 2007-07-05 | International Business Machines Corporation | OPTIMIZED SiCN CAPPING LAYER |
US7863183B2 (en) * | 2006-01-18 | 2011-01-04 | International Business Machines Corporation | Method for fabricating last level copper-to-C4 connection with interfacial cap structure |
US8034724B2 (en) * | 2006-07-21 | 2011-10-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US7811911B2 (en) * | 2006-11-07 | 2010-10-12 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
KR100824622B1 (ko) | 2006-11-27 | 2008-04-24 | 동부일렉트로닉스 주식회사 | 반도체 소자의 제조 방법 |
US7576003B2 (en) * | 2006-11-29 | 2009-08-18 | International Business Machines Corporation | Dual liner capping layer interconnect structure and method |
US7847402B2 (en) * | 2007-02-20 | 2010-12-07 | International Business Machines Corporation | BEOL interconnect structures with improved resistance to stress |
KR101100142B1 (ko) * | 2007-02-21 | 2011-12-29 | 후지쯔 세미컨덕터 가부시키가이샤 | 반도체 장치와 그 제조 방법 |
US20080299718A1 (en) * | 2007-06-01 | 2008-12-04 | Texas Instruments Incorporated | Damascene process having retained capping layer through metallization for protecting low-k dielectrics |
US20090176367A1 (en) * | 2008-01-08 | 2009-07-09 | Heidi Baks | OPTIMIZED SiCN CAPPING LAYER |
US7868453B2 (en) * | 2008-02-15 | 2011-01-11 | International Business Machines Corporation | Solder interconnect pads with current spreading layers |
US8368053B2 (en) * | 2011-03-03 | 2013-02-05 | International Business Machines Corporation | Multilayer-interconnection first integration scheme for graphene and carbon nanotube transistor based integration |
US8780576B2 (en) | 2011-09-14 | 2014-07-15 | Invensas Corporation | Low CTE interposer |
JP6318433B2 (ja) * | 2013-11-28 | 2018-05-09 | 大陽日酸株式会社 | シリコン窒化膜の形成方法及びシリコン窒化膜 |
US20150228555A1 (en) * | 2014-02-10 | 2015-08-13 | Globalfoundries Inc. | Structure and method of cancelling tsv-induced substrate stress |
US20160086960A1 (en) * | 2014-09-22 | 2016-03-24 | Texas Instruments Incorporated | Low-Temperature Passivation of Ferroelectric Integrated Circuits for Enhanced Polarization Performance |
JP6711673B2 (ja) * | 2016-04-06 | 2020-06-17 | キヤノン株式会社 | 光電変換装置、光電変換装置の製造方法及び撮像システム |
US10062653B2 (en) | 2016-09-29 | 2018-08-28 | Toshiba Memory Corporation | Semiconductor device and method for manufacturing same |
US11990334B2 (en) | 2019-07-19 | 2024-05-21 | Tokyo Electron Limited | Method for tuning stress transitions of films on a substrate |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1310471A (zh) * | 2000-02-22 | 2001-08-29 | 国际商业机器公司 | 形成用于互连的双层低介电阻挡层的方法及形成的装置 |
US6307268B1 (en) * | 1999-12-30 | 2001-10-23 | Winbond Electronics Corp | Suppression of interconnect stress migration by refractory metal plug |
CN1327266A (zh) * | 2000-06-07 | 2001-12-19 | 三菱电机株式会社 | 半导体装置及其制造方法 |
EP1168436A2 (en) * | 2000-06-29 | 2002-01-02 | International Business Machines Corporation | Polymer and ceramic composite electronic substrates |
US6368967B1 (en) * | 2000-05-04 | 2002-04-09 | Advanced Micro Devices, Inc. | Method to control mechanical stress of copper interconnect line using post-plating copper anneal |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4888247A (en) * | 1986-08-27 | 1989-12-19 | General Electric Company | Low-thermal-expansion, heat conducting laminates having layers of metal and reinforced polymer matrix composite |
US5077115A (en) * | 1990-05-08 | 1991-12-31 | Rogers Corporation | Thermoplastic composite material |
US5358775A (en) * | 1993-07-29 | 1994-10-25 | Rogers Corporation | Fluoropolymeric electrical substrate material exhibiting low thermal coefficient of dielectric constant |
US5552210A (en) * | 1994-11-07 | 1996-09-03 | Rogers Corporation | Ceramic filled composite polymeric electrical substrate material exhibiting high dielectric constant and low thermal coefficient of dielectric constant |
US5487218A (en) * | 1994-11-21 | 1996-01-30 | International Business Machines Corporation | Method for making printed circuit boards with selectivity filled plated through holes |
US5574630A (en) * | 1995-05-11 | 1996-11-12 | International Business Machines Corporation | Laminated electronic package including a power/ground assembly |
US6147009A (en) | 1998-06-29 | 2000-11-14 | International Business Machines Corporation | Hydrogenated oxidized silicon carbon material |
-
2002
- 2002-08-14 US US10/218,292 patent/US6617690B1/en not_active Expired - Lifetime
-
2003
- 2003-06-30 TW TW092117810A patent/TWI222170B/zh not_active IP Right Cessation
- 2003-07-16 CN CNB031784194A patent/CN1297000C/zh not_active Expired - Fee Related
- 2003-07-16 JP JP2003275624A patent/JP4045216B2/ja not_active Expired - Fee Related
- 2003-08-06 KR KR10-2003-0054257A patent/KR100497580B1/ko not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6307268B1 (en) * | 1999-12-30 | 2001-10-23 | Winbond Electronics Corp | Suppression of interconnect stress migration by refractory metal plug |
CN1310471A (zh) * | 2000-02-22 | 2001-08-29 | 国际商业机器公司 | 形成用于互连的双层低介电阻挡层的方法及形成的装置 |
US6368967B1 (en) * | 2000-05-04 | 2002-04-09 | Advanced Micro Devices, Inc. | Method to control mechanical stress of copper interconnect line using post-plating copper anneal |
CN1327266A (zh) * | 2000-06-07 | 2001-12-19 | 三菱电机株式会社 | 半导体装置及其制造方法 |
EP1168436A2 (en) * | 2000-06-29 | 2002-01-02 | International Business Machines Corporation | Polymer and ceramic composite electronic substrates |
Also Published As
Publication number | Publication date |
---|---|
KR100497580B1 (ko) | 2005-07-01 |
CN1477705A (zh) | 2004-02-25 |
TW200403807A (en) | 2004-03-01 |
JP2004080017A (ja) | 2004-03-11 |
KR20040016388A (ko) | 2004-02-21 |
TWI222170B (en) | 2004-10-11 |
JP4045216B2 (ja) | 2008-02-13 |
US6617690B1 (en) | 2003-09-09 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20171115 Address after: Grand Cayman, Cayman Islands Patentee after: GLOBALFOUNDRIES INC. Address before: American New York Patentee before: Core USA second LLC Effective date of registration: 20171115 Address after: American New York Patentee after: Core USA second LLC Address before: American New York Patentee before: International Business Machines Corp. |
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TR01 | Transfer of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070124 Termination date: 20190716 |
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CF01 | Termination of patent right due to non-payment of annual fee |