CN1284238C - 用于阻抗匹配的装置和方法 - Google Patents

用于阻抗匹配的装置和方法 Download PDF

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CN1284238C
CN1284238C CNB028056159A CN02805615A CN1284238C CN 1284238 C CN1284238 C CN 1284238C CN B028056159 A CNB028056159 A CN B028056159A CN 02805615 A CN02805615 A CN 02805615A CN 1284238 C CN1284238 C CN 1284238C
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菲利普·里奥内特
吉勒斯·蒙托雷奥尔
雅克·特里切特
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Abstract

本发明公开了用于阻抗匹配(例如用于功率放大器)的装置和方法，包括第一节点(204a)，用于接收要被阻抗匹配的输出电流；第二节点(212，214)，用于从第一节点接收输出电流；第一电流导线(202c)，用于从第一节点向第二节点传输电流；第三节点(204b)，用于从第二节点接收输出电流；和第二电流导线(202d)，用于从所述第二节点向所述第三节点传输电流，由此第一和第二电流导线被临近地放置，以使它们的电感为它们自感的和与它们互感的负数和。电流导线可以是焊线，装置可包括集成在功率放大器IC模块中的电容，其中电容可在与功率放大器分开的IC中提供，该装置可使用多个阻抗匹配单元，焊线可互相交叉在半导体印模中。这提供了下列的优点：易于实现；增加了匹配的精确性；只需很少的外部元件；易于制造；不需要专用设计流程；仅需标准IC生产和测试工具；使用低损耗匹配网络；仅在印模尺寸上有少量增加(由于电容的集成)，但是由于外部元件在数量上的减少，方案的总体尺寸显著地被减小(例如，减小50%)。

Description

用于阻抗匹配的装置和方法
技术领域
本发明涉及阻抗匹配，具体地说(但不唯一)涉及功率放大器的阻抗匹配。
背景技术
在本发明的领域中，为了使来自诸如功率放大器的器件的能量得到最佳传输，功率放大器的输出阻抗应该匹配功率放大器驱动的电路的输入阻抗，这一点是公知的。实际上，典型地，诸如集成电路(IC)功率放大器(PA)的输出阻抗是通过使用包含诸如通过导线从外部装配到IC并连接到IC的电感和电容的电力/电子网络而达到匹配的。典型地，焊线(wire-bonding)用于连接导线。电容可以是金属氧化物半导体电容(MOSCAP)或者表面黏贴式器件(Surface Mounted Device，SMD)电容。电感通常由传输线制造而成，诸如微带(microstrip)线或者共面(coplanar)线，通过上述电容在精确的位置上分流接地。
但是，这个方法具有如下缺点(一个或多个)：出于成本的考虑，SMD电容具有较差的品质因数，这会导致损耗和使带宽变窄的不可忽略的串联寄生电感，同时导致的大容差将使PA RF的性能偏差在许多性能参数上退化。此外，当它们被自动取放时，这样的SMD电容具有最小的间距规格以适应装配机的限制，因此造成功率放大器整体使用大小的增加。
因此，存在对缓和上述缺点的阻抗匹配的需要。
发明内容
根据本发明的第一方面，提供了一种用于阻抗匹配的装置(200)，包括：第一IC焊层(204a)，用于接收要被阻抗匹配的输出电流；第一组焊区焊点(212，214)，用于从所述第一IC焊层接收输出电流；第一电流导线(202c)，用于从所述第一IC焊层向所述第一组焊区焊点传输电流；和第二IC焊层(204b)，用于从所述第一组焊区焊点接收输出电流；第二电流导线(202d)，用于从所述第一组焊区焊点向所述第二IC焊层传输电流；和连接到所述第二IC焊层的电容装置(208)，由此所述第一和第二电流导线被临近地放置，以使它们提供对所述输出电流的电感，该电感包括它们的自感减去它们互感的总和，所述用于阻抗匹配的装置还包括具有RF功率晶体管的IC和印刷传输线，其中该印刷传输线通过电流导线连接到电容装置。
根据本发明的第二方面，提供了一种用于阻抗匹配的方法，包括：提供第一IC焊层(204a)，用于接收要被阻抗匹配的输出电流；提供第一组焊区焊点(212，214)，用于从所述第一IC焊层接收输出电流；提供第一电流导线(202c)，用于从所述第一IC焊层向所述第一组焊区焊点传输电流；和提供第二IC焊层(204b)，用于从所述第一组焊区焊点接收输出电流；提供第二电流导线(202d)，用于从所述第一组焊区焊点向所述第二IC焊层传输电流；和提供连接到所述第二IC焊层的电容装置(208)，由此所述第一和第二电流导线被临近地放置，以使它们提供对所述输出电流的电感，该电感为它们的自感减去它们互感的总和，提供具有RF功率晶体管的IC和印刷传输线，其中该印刷传输线通过电流导线连接到电容装置。
附图说明
现在将要根据附图，仅仅通过例子来说明用于组成本发明的阻抗匹配的四种装置和方法，其中：
图1示出了用于阻抗匹配的公知装置的示意局部截面图；
图2示出了用于阻抗匹配的组成本发明的第一新颖装置的示意局部截面图；
图3示出了图2装置的等价电路的方框图；
图4示出了图3电路一部分的图示；
图5示出了用于阻抗匹配的组成本发明的使用两个阻抗匹配单元的第二新颖装置的示意局部截面图；
图6示出了大体上与图2装置相似的用于阻抗匹配的组成本发明的使用交叉布线的第三新颖装置的示意局部截面图；
图7示出了与图2装置相似的用于阻抗匹配的组成本发明的使用双模交叉布线的第四新颖装置的示意局部截面图；
具体实施方式
首先参看图1，用于功率放大器102(诸如用在蜂窝式无线设备中的模块双带PA)的公知阻抗匹配装置100具有许多通过常规焊线技术在具有要匹配的RF功率晶体管108的IC 106和印刷传输线110之间连接的导线104。外部表面黏贴式器件(SMD)电容112连接在地/接地和远离导线104的印刷传输线110上的精确位置之间。
在这个装置中，可以认识到，电感(Llin+1wire)通过印刷传输线110和来自导线的电感实现，印刷传输线110的长度决定电感值Lline，而来自导线的电感决定电感值1wire。印刷传输线110的长度是由SMD电容112的精确位置所确定的。这样一种装置构成一个增加RF功率晶体管108输出阻抗的匹配单元。实际中，通常只使用一个阻抗匹配单元不允许输出阻抗在不降低功率放大器102的RF性能的前提下，(从典型不匹配的3欧姆)达到50欧姆的典型期望值。那么，需要一个附加的匹配单元，第二SMD电容连接在地/接地和远离前者的印刷传输线110上的第二精确位置之间。对于双带功率放大器应用，每个频带需要一个所述装置。
在这种方法中，可以认识到，印刷传输线由于其宽度而具有较低的电感率，印刷传输线的长度以及需要符合自动取放机要求的元件到元件间隔的SMD电容的使用将使功率放大器的尺寸以及随之而来的成本急剧地增加。
而且，出于成本的考虑，SMD电容具有较差的品质因数，这将导致损耗和使带宽变窄的不可忽略的串联寄生电感，同时导致的大容差将使PA RF的性能偏差在许多性能参数上退化。
现在参看图2，用于双带蜂窝式无线功率放大器模块的第一新颖阻抗匹配装置200具有许多导线202a-202f，这些导线通过常规焊线技术分别在其上具有(要被匹配的)RF功率晶体管206的IC 204和集成电容208以及印刷传输线210，第一焊区焊点212，以及第二焊区焊点214之间连接。
印刷传输线210，第一焊区焊点212和第二焊区焊点214的每个都通过两根导线202连接到IC 204(在其各自焊层204a，204b，204c)：印刷传输线210(可能是共面的或者微带传输线)在IC焊层204c通过两根导线202a和202b连接到集成电容208，第一焊区焊点212在IC焊层204a通过导线202c连接到RF功率晶体管206、并在IC焊层204b通过导线202d连接到集成电容208，第二焊区焊点214在IC焊层204b通过导线202e连接到集成电容208、并在IC焊层204a通过导线202f连接到RF功率晶体管206。正如将在下面更多的细节中解释的，在导线对(202c和202d，202e和202f)中，一根导线(202c，202f)传输来自IC 204上RF功率晶体管206的RF电流，另一根(202d，202e)传输通往IC 204上集成电容208的RF电流。实际中可以理解，为了提高电流传输容量，单独说明的导线202a，202b，202c，202d，202e，和202f实际上可以是导线组，其中每个导线组具有两条或者更多条的单独导线。
在阻抗匹配装置200中可认识到，导线对(202c和202d，202e和202f)非并联地传输RF电流，因此在它们之间产生了互感，互感负增加导线自感，从而产生耦合的总电感。可以认识到，这个负增加的效应将导致每对导线总电感的降低(与图1的公知装置相比较)，进一步认识到，这将导致有可能获得第一匹配单元典型需要的较低电感值。此外，图2装置的对称几何图形给RF功率晶体管206提供了热电均衡工作环境。
可以认识到，虽然本发明的上述是关于匹配功率放大器的输出阻抗的，但是本发明在多级放大器的情况下也可被使用于级间匹配网络。
现在参看图3，阻抗匹配装置200的等价电路300具有由电感L和电容C(集成在与PA IC相同的印模上)组成的匹配单元302，其中电感L是通过把分别由导线对(202c和202d)和(202e和202f)形成的电感Lcd和Lef并联放置而产生的。
现在参看图4，示出的匹配单元302的图示400表明，如上述，由于电容C被集成到IC印模中，电感由导线对202形成，因此该装置不需要外部元件。因此可以理解，阻抗匹配装置200能够提供高Q元件，小印模尺寸，并且相比图1的公知装置需要更少的外部元件。
现在参看图5，类似图2装置的用于双带蜂窝式无线功率放大器模块的第二新颖阻抗匹配装置500使用了两个阻抗匹配单元。在装置500的这两个单元中，许多的导线502a-502j通过常规焊线技术分别在其上具有要被匹配的RF功率晶体管506的IC 504(在其各自的504a，504b和504c)和集成电容508和509(在两个部分509.1和509.2中示出)与印刷传输线522，第一焊区焊点514和第二焊区焊点516，第三焊区焊点518和第四焊区焊点520之间连接。
第一焊区焊点514和第二焊区焊点516中的每个分别通过导线502c和502j连接以在IC焊层504a接收来自IC 504的RF电流；第一焊区焊点514和第二焊区焊点516中的每个分别通过导线502d和502i连接以发送RF电流到包含集成电容508的IC 504的焊层504b。第三焊区焊点518和第四焊区焊点520中的每个分别通过导线502e和502h连接以从包含集成电容508的IC 504的焊层504b接收RF电流；第三焊区焊点518和第四焊区焊点520中的每个分别通过导线502f和502g连接以发送RF电流到包含集成电容509的IC 504的焊层504c，其中集成电容509通过导线502a和502b连接到印刷传输线522。
在阻抗匹配装置500中，可以认识到，导线对(202c和202d，202e和202f，202g和202h，202i和202j)非并联地传输RF电流，因此在它们之间产生了互感，其负增加导线自感，从而产生耦合的总电感，如同图2的装置200中一样，具有与上述已解释的相同的优点。进一步认识到，由于装置500包括两个阻抗匹配单元(分别是514，502c，502d，516，502i，502j，508和518，502e，502f，520，502g，502h，509)，这将允许功率放大器504的输出阻抗比图2的单一单元装置200更加有效地从3欧姆的典型值增加到50欧姆的期望值。
现在参看图6，第三新颖阻抗匹配装置600大体类似于图2的单一单元装置，并且包括一个交叉布线结构。用于双带蜂窝式无线功率放大器模块的阻抗匹配装置600具有许多导线602，这些导线通过常规焊线技术在其上具有要被匹配的RF功率晶体管606的IC 604，集成电容608，焊区610与印刷传输线622之间连接。集成电容608交叉分布在IC印模中，并且分别从晶体管606到焊区610，从焊区610到集成电容608，以及从集成电容608到印刷传输线622传输电流的导线602也是互相交叉在印模中。这样，可以认识到，装置600具有上面解释的图2装置200的所有优点，同时由于RF电流导电是通过交叉印模传播的，因此又增加了可以进行更有效的热电操作这一优点。
可以认识到，图6的阻抗匹配装置600由于是基于类似上述图2装置200的单阻抗匹配单元的，因此同样地可以扩展到两个或者更多阻抗匹配单元。
现在参看图7，第四新颖阻抗匹配装置700大体类似于图6的装置600，并且当使用两个不同印模时包括了一个交叉布线结构。用于双带蜂窝式无线功率放大器模块的阻抗匹配装置700具有许多导线702，这些导线通过常规焊线技术在其上具有要被匹配的RF功率晶体管706的第一IC印模704a，包含集成电容708的第二IC印模704b，焊区710与印刷传输线722之间连接。如同图6的装置600中一样，集成电容708交叉分布在IC印模704b中，并且分别从IC印模704a上的晶体管706到焊区710，从焊区710到IC印模704b上的集成电容708，以及从IC印模704b上的集成电容708到印刷传输线722传输电流的导线702也是互相交叉在印模中的。这样，可以认识到，装置700具有图2装置200的所有优点以及上述增加的图6装置600的热分布优点。此外，可以认识到，装置700由于使用了两个印模704a和704b，可以减少装置的全部成本，这是因为当提供集成电容的印模704b可以是更低成本的硅半导体时，印模704a(典型地，为高成本的砷化镓半导体)的尺寸可以减小到仅仅能够提供RF功率晶体管706的需要就行了。
可以认识到，由于图7的阻抗匹配装置700类似上述的图2装置200和图6装置600，是基于单阻抗匹配单元的，所以可以同样地被扩展到两个或者更多的阻抗匹配单元。在此情况中，第二单元(以及任意更多单元)所需的电容可以全部在更低成本的印模704b上提供。
可以认识到，虽然本发明是关于RF功率放大器做上述说明的，但是本发明也可以用于更高或者更低频率，或者用于需要阻抗变换的其它应用中，例如压控振荡器(VCO)或者低噪放大器(LNA)。同时也应该认识到，本发明可用于包括诸如GSM，CDMA，TDMA，W-CDMA，GPRS，EDGE，UMTS等标准调制或者所期望的其它调制结构的电信应用。
可以理解，上述的用于阻抗匹配的装置和方法提供了下列优点：
●易于实现
●增加了匹配的精确性
●只需很少的外部元件
●易于制造
●不需要专用设计流程
●仅需标准IC生产和测试工具
●使用低损耗匹配网络
●仅在印模尺寸上有少量增加(由于电容的集成)，但是由于外部元件在数量上的减少，方案的总体尺寸显著地被减小(例如，减小50％)。

Claims (10)

1.一种用于阻抗匹配的装置(200)，包括：
第一IC焊层(204a)，用于接收要被阻抗匹配的输出电流；
第一组焊区焊点(212，214)，用于从所述第一IC焊层接收输出电流；
第一电流导线(202c)，用于从所述第一IC焊层向所述第一组焊区焊点传输电流；和
第二IC焊层(204b)，用于从所述第一组焊区焊点接收输出电流；
第二电流导线(202d)，用于从所述第一组焊区焊点向所述第二IC焊层传输电流；和
连接到所述第二IC焊层的电容装置(208)，
由此所述第一和第二电流导线被临近地放置，以使它们提供对所述输出电流的电感，该电感包括它们的自感减去它们互感的总和，
所述用于阻抗匹配的装置还包括具有RF功率晶体管的IC和印刷传输线，其中该印刷传输线通过电流导线连接到电容装置。
2.根据权利要求1所述的用于阻抗匹配的装置，其中所述第一IC焊层和所述第二IC焊层是在集成电路(204)中提供的。
3.根据权利要求1所述的用于阻抗匹配的装置，其中所述第一IC焊层和所述第二IC焊层是在各自的集成电路(704a，704b)中提供的。
4.根据前述权利要求任意之一所述的用于阻抗匹配的装置，进一步包括：
第二组焊区焊点(518，520)，用于从所述第二IC焊层接收输出电流；
第三电流导线(502e，502h)，用于从所述第二IC焊层向所述第二组焊区焊点传输电流；和
第三IC焊层，用于从所述第二组焊区焊点接收输出电流；
第四电流导线(502f，502g)，用于从所述第二组焊区焊点向所述第三IC焊层传输电流，
由此所述第三和第四电流导线被临近地放置，以使它们提供对所述输出电流的电感，该电感为它们的自感减去它们互感的总和。
5.根据权利要求4所述的用于阻抗匹配的装置，其中所述电容装置包括：
连接到所述第二IC焊层的第一电容(508)；和
连接到所述第三IC焊层的第二电容(509)，用于连接到传输线(522)。
6.根据权利要求1所述的用于阻抗匹配的装置，其中所述电流导线是交叉指状的。
7.一种包含根据权利要求1所述的用于阻抗匹配的装置的模块。
8.一种用于阻抗匹配的方法，包括：
提供第一IC焊层(204a)，用于接收要被阻抗匹配的输出电流；
提供第一组焊区焊点(212，214)，用于从所述第一IC焊层接收输出电流；
提供第一电流导线(202c)，用于从所述第一IC焊层向所述第一组焊区焊点传输电流；和
提供第二IC焊层(204b)，用于从所述第一组焊区焊点接收输出电流；
提供第二电流导线(202d)，用于从所述第一组焊区焊点向所述第二IC焊层传输电流；和
提供连接到所述第二IC焊层的电容装置(208)，
由此所述第一和第二电流导线被临近地放置，以使它们提供对所述输出电流的电感，该电感为它们的自感减去它们互感的总和，
提供具有RF功率晶体管的IC和印刷传输线，其中该印刷传输线通过电流导线连接到电容装置。
9.根据权利要求8所述用于阻抗匹配的方法，其中所述第一IC焊层和所述第二IC焊层是在集成电路(204)中提供的。
10.根据权利要求8所述用于阻抗匹配的方法，其中所述第一IC焊层和所述第二IC焊层是在各自的集成电路(704a，704b)中提供的。
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CN1494741A (zh) 2004-05-05
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JP4318457B2 (ja) 2009-08-26
KR100862874B1 (ko) 2008-10-15
EP1237189A1 (en) 2002-09-04
HK1064208A1 (en) 2005-01-21
JP2004523172A (ja) 2004-07-29
US20070159266A1 (en) 2007-07-12
WO2002069403A1 (en) 2002-09-06
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US20040085152A1 (en) 2004-05-06
US7432778B2 (en) 2008-10-07

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