CN1260749C - Prepn. process for magnetic core solenoidal microinduction element of micro-electromechanical system - Google Patents
Prepn. process for magnetic core solenoidal microinduction element of micro-electromechanical system Download PDFInfo
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- CN1260749C CN1260749C CN 200410017853 CN200410017853A CN1260749C CN 1260749 C CN1260749 C CN 1260749C CN 200410017853 CN200410017853 CN 200410017853 CN 200410017853 A CN200410017853 A CN 200410017853A CN 1260749 C CN1260749 C CN 1260749C
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Abstract
The present invention provides a method for preparing a magnetic core solenoidal micro-induction element of a micro-electromechanical system. The MEMS technology of a micro-electromechanical system is used for processing a silicon chip whose double faces are oxidized to obtain alignment symbols engraved on both sides in order to improve alignment precision during exposure. A seed layer is removed by physical etching technology. By adopting electrical plating for one time, a conductor is connected. A prepared micro-induction element is composed of a substrate, a pin, a coil and a magnetic core, wherein two sets of connected three-dimensional stereo solenoid coils are symmetrically circled on the rectangle or annular closed magnetic core. The coil is formed by the connection of a bottom-layer coil and a top-layer coil through a connected conductor. The bottom-layer coil, top-layer coil and the connected conductor are separated by polyimide insulation materials and the magnetic core. The method of the present invention avoids an undercutting phenomenon caused by wet etching technology and solves a problem of stereo winding and insulation among layers and an electrical plating problem for the high ratio of depth to width to greatly improve the inductance performance of the micro-induction element.
Description
Technical field
The present invention relates to the preparation method of a kind of MEMS (micro electro mechanical system) (MEMS) magnetic core solenoid micro inductor spare, microminiaturization, the integrated magnetic core micro-inductor device of preparation is the key element of realizing microminiaturized DC-DC converter, can be widely used in the power supply device of radio communication, military affairs/aero-space instrument equipment, computer/external equipment and other various portable type electronic products.Belong to microelectronics technology.
Background technology
Miniaturization portable type electronic product such as mobile communication product mobile phone CDMA (Code DivisionMultiple Access in recent years, code division multiple access), portable notebook computer, networking products ADSL (AsymmetricalDigital Subscriber Loop, ADSL (Asymmetric Digital Subscriber Line)), microprocessor, digital camera, flush memory device, sound equipment, charger etc. more and more receive the welcome and the concern in market.The miniaturization of these portable type electronic products, microminiaturization at first will be considered the miniaturization and the microminiaturization of electronic devices and components.Magnetic device such as inductance component and the power transformer that constitutes by it, the DC-DC converter, oscillator, filter, amplifier and tuner etc. are indispensable critical elements in the electronic circuit, inductance component microminiaturized and with the integrated of circuit be to realize electronic equipment, the electronic product small size, one of in light weight and high performance key, particularly the microminiaturized DC-DC converter that is made of the magnetic thin film micro-inductor device will be widely used in various portable type electronic products such as mobile phone CDMA, networking products ADSL, transmission of the power of microprocessor and DVD etc. among computer system/external equipment such as the notebook personal computer, digital system such as 8mm video tape recorder etc.Generally speaking, conventional inductance component mostly adopts mechanical winding mode coiling around magnetic core, has the low shortcomings such as (a few KHz) of big, the high weight of volume, cost height and operating frequency.The magnetic thin film micro-inductor device requires operating frequency more than 1MHz, and size adopts conventional microelectric technique to be difficult in and makes high performance microminiaturized inductance component on the planar substrate below 2mm.In recent years, MEMS (micro electro mechanical system) (MEMS) technology rapid development, particularly standard-LIGA the process technology based on the non-silicon materials of three-dimensional becomes the current a kind of state-of-the-art technology of developing microminiaturized sandwich construction micro element and RF MEMS device in the world.As (C.H.Ahn such as Ahn, Y.J.Kim, M.G.Allen, A Fully Integrated Planar Toroidal Inductor with a MicromachinedNickel-Iron Magnetic Bar, IEEE Trans.Magn., Vol.17, No.3,1994, pp.463-469.) adopt MEMS technology and reactive ion etching (RIE) technology, by the method for electro-coppering coil and iron nickel magnetic core, developed the solenoid micro inductor spare that is of a size of 4mm * 1mm, inductance value is 0.4 μ H under 10kHz.Owing in manufacturing process, use wet chemical etching bottom, unavoidably bring the undercutting phenomenon to coil.And in manufacture process, the insulating material curing temperature that the author uses will exert an influence to the performance of coil and magnetic core up to 350 ℃, therefore is difficult to obtain high performance micro-inductor device.
Summary of the invention
The objective of the invention is at the deficiency of the prior art and the market demand, propose a kind of preparation method of MEMS (micro electro mechanical system) magnetic core solenoid micro inductor spare, make the micro-inductor device that obtains have low resistance, high inductance, high-quality-factor and high efficiency, low-loss characteristics.
For realizing such purpose, the present invention utilizes the micro-electromechanical system (MEMS) technology, silicon chip to two-sided oxidation is handled, obtain the double-sided overlay alignment symbology,, adopt the physical etchings technology to go Seed Layer so that when exposure improved alignment precision, the undercutting phenomenon of avoiding wet-etching technology to bring, adopt and once electroplate the bonding conductor method, effectively solve the problem of the high-aspect-ratio of electroplating the bonding conductor appearance in the prior art, prepare high-quality microminiaturized magnetic core solenoid micro inductor spare.
Micro-inductor device of the present invention is mainly by substrate, pin, and coil, magnetic core are formed, two groups of 3 D stereo solenoid coils that link to each other of symmetrical coiling on the closed magnetic core of annular, coil and pin are arranged on the substrate plane.Coil is connected to form by bonding conductor by bottom coil and top layer coil, and bottom coil, top layer coil and bonding conductor separate by polyimide foam insulation and magnetic core, separates by polyimide foam insulation between coil and the coil.
The width of bottom coil of the present invention and top layer coil is 15～25 μ m, and the conductor thickness of each circle is 5～20 μ m, and the spacing between each circle is 15～25 μ m, and the number of turn is 38～42 circles.
The spatial form of bonding conductor of the present invention is a four prisms cylinder, and thickness is 40～70 μ m.
Soft magnetic material such as the permalloy of core material for electroplating, thickness is 20～40 μ m.
Polyimide foam insulation not only insulate magnetic core and upper and lower layer line circle, and play support platform.
It is specific as follows that the present invention makes the technology of MEMS magnetic core solenoid micro inductor spare:
1, the two-sided positive-glue removing AZ4000 of the silicon chip substrate series of the two-sided oxidation of crossing in clean, photoresist thickness is 5 μ m, then photoresist is dried; After exposure, developing, etching silicon dioxide in corrosive liquid is removed all photoresists with acetone at last, obtains the double-sided overlay alignment symbology with the silicon chip bottom surface.
2, deposit Cr/Cu bottom coil Seed Layer on silicon chip, thickness is 100nm.Following technology is all carried out on this face.
3, positive-glue removing, photoresist thickness are 8 μ m, and the photoresist on the substrate base is dried; Obtain plating underlayer after exposure, the development and connect wire pattern; Remove photoresist behind the physical etchings bottom, obtain plating underlayer and connect lead.
4, positive-glue removing, photoresist thickness are 20 μ m, then photoresist are dried; Obtain the bottom coil figure after exposure, the development; Last electroplating ground loop, thickness is 20 μ m, plated material is a copper.
5, positive-glue removing, the thickness of photoresist are 10 μ m, then photoresist are dried; Obtain the figure of pin after exposure, the development; Electroplate pin at last, thickness is 10 μ m, and plated material is a copper.
6, remove all photoresists with acetone after; Get rid of polyimides, curing and polishing then, polyimides thickness is 40 μ m, and stoving process is that segmentation is incubated 3 hours between 120～200 ℃, solidifies 2 hours under 250 ℃ of argon gas atmosphere then, cools off with stove at last; The polishing polyimides, the insulating barrier that keeps bottom coil and magnetic core is 10 μ m.
7, sputter NiFe magnetic core Seed Layer, thickness is 100nm; Positive-glue removing, photoresist thickness are 30 μ m, then photoresist are dried; After exposure and the development, obtain the magnetic core figure; Electroplate magnetic core at last, thickness is 30 μ m, and material is a permalloy.
8, remove all photoresists with acetone after, with physical etchings method etching N iFe magnetic core Seed Layer.
9, get rid of polyimides, curing and polishing, polyimides thickness is 60 μ m, and stoving process is that segmentation is incubated 3 hours between 120～200 ℃, solidifies 2 hours under 250 ℃ of argon gas atmosphere at last, cools off with stove at last; The polishing polyimides, the insulating barrier that keeps top layer coil and magnetic core is 10 μ m.
10, AM aluminum metallization film, thickness are 300nm; Positive-glue removing, photoresist thickness are 8 μ m, then photoresist are dried; Exposure with develop after, with chemical method etching aluminium film, remove all photoresists with acetone then after, obtain etching bonding conductor graphical window; Make mask with the aluminium film, reactive ion (RIE) etching polyimides etches into till the copper bonding conductor of bottom coil always; Electroplate bonding conductor at last, thickness is 50 μ m, and plated material is a copper.
11, with remaining aluminium film of physical etchings method etching, until exposing polyimides.
12, sputter Cr/Cu top layer coil Seed Layer, thickness is 100nm; Positive-glue removing, photoresist thickness are 20 μ m, then photoresist are dried; After exposure and the development, obtain the figure of top layer coil; Last electroplating topping coil, thickness is 20 μ m, plated material is a copper.
13, with behind the acetone removal photoresist, with physical etchings method etching Cr/Cu top layer coil Seed Layer.
14, get rid of polyimides, curing and polishing, polyimides thickness is 40 μ m, and stoving process is that segmentation is incubated 3 hours between 120～200 ℃, solidifies 2 hours under 250 ℃ of argon gas atmosphere then, cools off with stove at last; The polishing polyimides is till top layer coil exposes.
15, evaporation top layer aluminium film, thickness is 300nm; Positive-glue removing, photoresist thickness are 8 μ m, then photoresist are dried; Exposure with develop after, with chemical method etching top layer aluminium film, remove all photoresists with acetone then after, obtain window with reactive ion (RIE) etching bottom pin figure and peripheral polyimides; Make mask with top layer aluminium film, reactive ion (RIE) etching polyimides etches into pin and plating underlayer always and connects till the lead exposure.
16, with physical etchings method remaining top layer aluminium film of etching and top layer coil Cr/Cu Seed Layer, finally obtain magnetic core solenoid micro inductor spare.
In the inventive method, elder generation's low speed 800 maintenance handovers were held 10 seconds when getting rid of polyimides, and quick again 2000 maintenance handovers were held 30 seconds, dried then, solidified.
The present invention compared with prior art has following useful effect:
(1) the present invention has avoided employing wet etching Cr/Cu Seed Layer, and adopts physical method etching Seed Layer, has eliminated the undercutting phenomenon that occurs in the wet etching, can obtain the uniform conductor of coil;
(2) the present invention adopts the double-sided overlay technology, has improved the precision of photoetching greatly;
(3) the present invention adopts and once electroplates bonding conductor, efficiently solves the problem of the advanced expanded letter of electroplating the bonding conductor appearance in the prior art;
(4) the present invention adopts polyimides to make insulating barrier, efficiently solves the Insulation Problems between magnetic core and bottom coil and top layer coil and bonding conductor and the magnetic core.
(5) the present invention adopts polishing technology to polyimide insulative layer, has improved the planarization of substrate, has solved the problem that opening circuit appears in connection between bonding conductor and the coil well.
Description of drawings
Fig. 1 is a micro-inductor device structural representation of the present invention.Among Fig. 1,1 is substrate, and 2 is pin, and 3 is coil, and 4 is magnetic core.
Fig. 2 is that Fig. 1 structure is along A-A direction cut-away view.Among Fig. 2,1 is substrate, and 4 is magnetic core, and 5 is bottom coil, and 6 is polyimide foam insulation, and 7 is connector, and 8 is top layer coil.
Fig. 3 is positive-glue removing in the inventive method step 1, exposure, developing process schematic diagram.Among Fig. 3,1 is substrate; 9 is positive glue.
Fig. 4 is etching SiO in the step 1
2And deluster and carve the adhesive process schematic diagram.Among Fig. 4,10 is the alignment figure.
Fig. 5 is a step 2, deposit Cr/Cu in 4, positive-glue removing, exposure, development, electroplating ground loop process schematic representation.Among Fig. 5,5 is bottom coil, and 11 is Cr/Cu bottom coil Seed Layer; 12 is positive glue.
Fig. 6 is positive-glue removing, exposure, development in the step 5, electroplates the pin process schematic representation.Among Fig. 6,2 is pin; 13 is positive glue.
Fig. 7 removes positive glue, polyimide curing and glossing schematic diagram in the step 6.Among Fig. 7,6 is polyimides.
Fig. 8 deposits NiFe in the step 7, positive-glue removing, exposure, development, electroplating technology schematic diagram.Among Fig. 8,4 is magnetic core; 14 is NiFe magnetic core Seed Layer; 15 is positive glue.
Fig. 9 removes positive glue and NiFe Seed Layer, polyimide curing and glossing schematic diagram in step 8～9.Among Fig. 9,6 is polyimides.
Figure 10 is step 10 an AM aluminum metallization film, positive-glue removing, exposure, development, reactive ion (RIE) etching polyimides process schematic representation.Among Figure 10,16 is the aluminium film; 17 is positive glue; 18 is etching window.
Figure 11 electroplates connector in step 10～11, removes aluminium membrane process schematic diagram.Among Figure 11,7 is connector.
Figure 12 is sputter Cr/Cu in the step 12, positive-glue removing, exposure, development, electroplating topping coil process schematic representation.Among Figure 12,8 is top layer coil; 19 is the Cr/Cu layer; 20 is positive glue.
Figure 13 removes positive glue and bottom, polyimide curing and glossing schematic diagram in step 13～14.Among Figure 13,6 is polyimides.
Figure 14 is an evaporation top layer aluminium film in the step 15, positive-glue removing, exposure, development, reactive ion (RIE) etching polyimides process schematic representation.Among Figure 14,21 is top layer aluminium film; 22 is positive glue.
Figure 15 removes positive glue, etching top layer aluminium film and bottom process schematic representation in the step 16.
Embodiment
Below in conjunction with accompanying drawing concrete structure of the present invention is further described.
Micro-inductor device structure of the present invention as shown in Figure 1, by substrate 1, pin 2, solenoid coil 3, magnetic core 4 are formed, solenoid coil 3 is based on substrate 1, two groups of 3 D stereo solenoid coils 3 that link to each other of symmetrical coilings around the magnetic core 4 of rectangle closure, and the two ends of solenoid coil 3 connect pin 2.
Fig. 2 be Fig. 1 structure along A-A direction cut-away view, shown the longitudinal stereoscopic structure at solenoid coil of the present invention 3 places.As shown in Figure 2, bottom coil 5 is set on the plane of substrate 1, coiling 3 D stereo solenoid coil 3 around the magnetic core 4, solenoid coil 3 is connected to form by bonding conductor 7 by bottom coil 5, top layer coil 8, and bottom coil 5, top layer coil 8, bonding conductor 7 all separate by polyimide foam insulation 6 and magnetic core 4.
The spatial form of bonding conductor 7 is a four prisms cylinder, highly is 50 μ m.
Fig. 3～15 have provided the development technology of above-mentioned MEMS magnetic core solenoid micro inductor spare, concretely: (1) is two-sided positive-glue removing AZ4000 series on the substrate 1 of the two-sided oxidation that clean is crossed, photoresist 9, as shown in Figure 3, the thickness of photoresist is 5 μ m, with the photoresist oven dry, the temperature of oven dry is 95 ℃, and the time is 1 hour; After single face exposure, the development, etching silicon dioxide in corrosive liquid removes photoresist 9, obtains double-sided overlay alignment patterns 10 as shown in Figure 4; (2) deposit Cr/Cu bottom coil Seed Layer 11 on silicon chip, as shown in Figure 5, thickness is 100nm; (3) positive-glue removing, photoresist thickness are 5 μ m, and with the substrate base oven dry, the temperature of oven dry is 95 ℃, and drying time is 1 hour; Obtain plating underlayer after exposure, the development and connect wire pattern; The physical etchings bottom is removed photoresist with acetone at last then, obtains plating underlayer and connects lead; (4) positive-glue removing 12, and as shown in Figure 5, photoresist thickness is 20 μ m, and with the substrate base oven dry, the temperature of oven dry is 90 ℃, and drying time is 2 hours; Obtain the bottom coil figure after exposure, the development; Last electroplating ground loop 5, thickness is 20 μ m, plated material is a copper; (5) positive-glue removing 13, and as shown in Figure 6, the thickness of photoresist is 10 μ m, and bake out temperature is 95 ℃, and the time is 1 hour; Obtain the figure of pin after exposure, the development; Electroplate pin 2, thickness is 10 μ m, and plated material is a copper; (6) remove positive glue 12,13 with acetone; Get rid of polyimides 6 then, solidify and polishing, as shown in Figure 7, polyimides thickness is 40 μ m, stoving process be 120 ℃, 150 ℃, 180 ℃ each 1 hour, under 250 ℃ of argon gas atmosphere, solidified 2 hours then, cool off with stove at last; Polishing polyimides 6, the insulating barrier that keeps bottom coil 5 and magnetic core 4 is 10 μ m; (7) sputter NiFe magnetic core Seed Layer 14, and as shown in Figure 8, thickness is 100nm; Positive-glue removing 15, photoresist thickness are 30 μ m, and bake out temperature is 90 ℃, and the time is 2 hours; After exposure and the development, obtain the magnetic core figure; Electroplate magnetic core 4, thickness is 30 μ m, and material is a permalloy; (8) with behind the acetone removal photoresist 15, with physical etchings method etching N iFe magnetic core Seed Layer 14; (9) get rid of polyimides 6, solidify and polishing, as shown in Figure 9, polyimides thickness is 60 μ m, and stoving process is 120 ℃, 150 ℃, 180 ℃ each 1 hour, under 250 ℃ of argon gas atmosphere, solidified 2 hours then, cool off with stove at last; Polishing polyimides 6, reservation top layer coil 8 as shown in Figure 2 is 10 μ m with the insulating barrier of magnetic core 4; (10) the AM aluminum metallization film 16, and as shown in figure 10, thickness is 300nm; Positive-glue removing 17, photoresist thickness are 8 μ m, and bake out temperature is 95 ℃, and the time is 1 hour; Exposure with develop after, with chemical method etching aluminium film 16, remove photoresist 17 with acetone at last, obtain bonding conductor graphical window 18, make mask with the aluminium film, reactive ion (RIE) etching polyimides 6 etches into the bonding conductor 7 of bottom always; Electroplate bonding conductor 7 at last, as shown in figure 11, thickness is 50 μ m, and plated material is a copper; (11) with remaining aluminium film 16 of physical etchings method etching, until exposing polyimides; (12) sputter Cr/Cu top layer coil Seed Layer 19, and as shown in figure 12, thickness is 100nm; Positive-glue removing 20, photoresist thickness are 20 μ m, and bake out temperature is 90 ℃, and the time is 2 hours; After exposure and the development, obtain the figure of top layer coil; Last electroplating topping coil 8, thickness is 20 μ m, plated material is a copper; (13) with behind the acetone removal photoresist 20, with physical etchings method etching Cr/Cu top layer coil Seed Layer 19; (14) get rid of polyimides 6, solidify and polishing, as shown in figure 13, polyimides thickness is 40 μ m, and stoving process is 120 ℃, 150 ℃, 180 ℃ each 1 hour, under 250 ℃ of argon gas atmosphere, solidified 2 hours then, cool off with stove at last; Polishing polyimides 6 is till top layer coil 8 exposes; (15) evaporation top layer aluminium film 21, and as shown in figure 14, thickness is 300nm; Positive-glue removing 22, photoresist thickness are 8 μ m, and bake out temperature is 95 ℃, 1 hour; After exposure and the development,, remove photoresist 22, obtain window with reactive ion (RIE) etching bottom pin figure and peripheral polyimides with acetone with chemical method etching top layer aluminium film 21; Make mask with top layer aluminium film 21 at last, reactive ion (RIE) etching polyimides 6 etches into pin 2 and plating underlayer always and connects till the lead exposure; (16) with physical etchings method remaining top layer aluminium film 21 of etching and Cr/Cu bottom coil Seed Layer 11, finally obtain magnetic core solenoid micro inductor spare as shown in figure 15.
Among the embodiment, elder generation's low speed 800 maintenance handovers were held 10 seconds when getting rid of polyimides, and quick again 2000 maintenance handovers were held 30 seconds, dried then, solidified.
Claims (2)
1, a kind of preparation method of MEMS (micro electro mechanical system) magnetic core solenoid micro inductor spare is characterized in that comprising the steps:
1) positive-glue removing on the two-sided oxidized silicon chip substrate that clean is crossed, photoresist thickness is 5 μ m, then photoresist is dried; The silicon chip bottom surface is after exposure, developing, and etching silicon dioxide removes photoresist, obtains double-sided overlay alignment symbology (10);
2) deposit Cr/Cu bottom coil Seed Layer (11) on silicon chip, thickness is 100nm;
3) positive-glue removing, photoresist thickness are 5 μ m, and substrate base is dried; Obtain plating underlayer after exposure, the development and connect wire pattern; The physical etchings bottom is removed photoresist with acetone at last then, obtains plating underlayer and connects lead;
4) positive-glue removing, photoresist thickness are 20 μ m, and substrate base is dried; Obtain the bottom coil figure after exposure, the development; Last electroplating ground loop (5), thickness is 20 μ m, plated material is a copper;
5) positive-glue removing, the thickness of photoresist are 10 μ m, then photoresist are dried; Obtain the figure of pin after exposure, the development; Electroplate pin (2), thickness is 10 μ m, and plated material is a copper;
6) remove photoresist with acetone; Get rid of polyimides (6) then, thickness is 40 μ m, stoving process be 120 ℃, 150 ℃, 180 ℃ each 1 hour, under 250 ℃ of argon gas atmosphere, solidified 2 hours then, cool off with stove at last; Polishing polyimides (6), the insulating barrier that keeps bottom coil (5) and magnetic core (4) is 10 μ m;
7) sputter NiFe magnetic core Seed Layer (14), thickness is 100nm; Positive-glue removing, photoresist thickness are 30 μ m, and photoresist is dried; After exposure and the development, obtain the magnetic core figure; Electroplate magnetic core (4), thickness is 30 μ m, and material is a permalloy;
8) with behind the acetone removal photoresist, with physical etchings method etching N iFe magnetic core Seed Layer (14);
9) get rid of polyimides (6), thickness is 60 μ m, and stoving process is 120 ℃, 150 ℃, 180 ℃ each 1 hour, under 250 ℃ of argon gas atmosphere, solidified 2 hours then, cool off with stove at last; Polishing polyimides (6), the insulating barrier that keeps top layer coil (8) and magnetic core (4) is 10 μ m;
10) AM aluminum metallization film (16), thickness is 300nm; Positive-glue removing, photoresist thickness are 8 μ m, and photoresist is dried; After exposure and the development,, remove photoresist with acetone at last, obtain bonding conductor graphical window with chemical method etching aluminium film (16); Make mask with the aluminium film, reactive ion (RIE) etching polyimides (6) etches into the bonding conductor (7) of bottom always; Electroplate bonding conductor (7) at last, thickness is 50 μ m, and plated material is a copper;
11) with remaining aluminium film (16) of physical etchings method etching, until exposing polyimides (6);
12) sputter Cr/Cu top layer coil Seed Layer (19), thickness is 100nm; Positive-glue removing, photoresist thickness are 20 μ m, and photoresist is dried; After exposure and the development, obtain the figure of top layer coil; Last electroplating topping coil (8), thickness is 20 μ m, plated material is a copper;
13) with behind the acetone removal photoresist, with physical etchings method etching Cr/Cu top layer coil Seed Layer (19);
14) get rid of polyimides (6), solidify and polishing, polyimides thickness is 40 μ m, and stoving process is 120 ℃, 150 ℃, 180 ℃ each 1 hour, under 250 ℃ of argon gas atmosphere, solidified 2 hours then, cool off with stove at last; Polishing polyimides (6) is till top layer coil (8) exposes;
15) evaporation top layer aluminium film (21), thickness is 300nm; Positive-glue removing, photoresist thickness are 8 μ m, and photoresist is dried; After exposure and the development,, remove photoresist, obtain window with reactive ion etching bottom pin figure and peripheral polyimides with acetone with chemical method etching top layer aluminium film (21); Use top layer aluminium film (21) to make mask at last, reactive ion etching polyimides (6) etches into pin (2) and plating underlayer always and connects till the lead exposure;
16) with physical etchings method remaining top layer aluminium film (21) of etching and Cr/Cu bottom coil Seed Layer (11), finally obtain magnetic core solenoid micro inductor spare.
2, the preparation method of microminiaturized magnetic core solenoid micro inductor spare as claimed in claim 1, elder generation's low speed 800 maintenance handovers were held 10 seconds when it is characterized in that getting rid of polyimides, and quick again 2000 maintenance handovers were held 30 seconds, dried then, solidified.
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| CN101170002B (en) * | 2007-09-20 | 2010-08-18 | 上海交通大学 | RF micro-inductance with suspending structure and its making method |
| CN101599425B (en) * | 2009-04-17 | 2010-09-29 | 北京交通大学 | Preparation method of solenoid inductor in micro electro mechanical system (MEMS) |
| CN101908403B (en) * | 2009-06-08 | 2013-03-06 | 中国长城计算机深圳股份有限公司 | Inductance element, power factor correction circuit and switch power supply |
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| CN102789967B (en) * | 2012-08-16 | 2014-09-24 | 中国电子科技集团公司第五十五研究所 | Manufacturing method for soft magnetic core spiral micro-inductor |
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| CN106298180A (en) * | 2016-08-17 | 2017-01-04 | 上海交通大学 | The graphical planar magnetic core double layer planar micro-inductance of helical structure thin film and preparation method |
| CN107705971A (en) * | 2017-08-30 | 2018-02-16 | 歌尔股份有限公司 | A kind of manufacture method of coil, coil, electronic equipment |
| US20220157512A1 (en) * | 2020-11-13 | 2022-05-19 | Cyntec Co., Ltd. | Structure for forming a 3d-coil transponder |
| CN112599321B (en) * | 2020-12-19 | 2024-05-14 | 北京航空航天大学 | Miniature three-dimensional solenoid transformer and digital isolator |
| CN114334335A (en) * | 2021-12-30 | 2022-04-12 | 杭州电子科技大学 | Magnetic element with multilayer magnetic core |
| CN114898986A (en) * | 2022-05-05 | 2022-08-12 | 北京航空航天大学 | Z-type MEMS double-layer solenoid inductance double-layer coil and integrated preparation method |
| CN114883083A (en) * | 2022-05-05 | 2022-08-09 | 北京航空航天大学 | Progressive MEMS double-layer solenoid inductance coil and integrated preparation method thereof |
| CN115072655B (en) * | 2022-07-22 | 2022-11-11 | 中国电子科技集团公司第五十八研究所 | Wafer-level preparation method of biocompatible micro solenoid |
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