CN101477873B - Preparation of micro-inductor device in planar magnetic core helical structure - Google Patents
Preparation of micro-inductor device in planar magnetic core helical structure Download PDFInfo
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- CN101477873B CN101477873B CN2008102004228A CN200810200422A CN101477873B CN 101477873 B CN101477873 B CN 101477873B CN 2008102004228 A CN2008102004228 A CN 2008102004228A CN 200810200422 A CN200810200422 A CN 200810200422A CN 101477873 B CN101477873 B CN 101477873B
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Abstract
The invention relates to a micro-inductor with a planar core helical structure, and a preparation method thereof, which belong to the microelectronic technical field. The micro-inductor comprises a substrate, a magnetic core material, an insulating material, a coil with a planar helical structure, pins and lead wires, wherein, the coil with the planar helical structure is wrapped by two layers of core material and separated by polyimide; and a central pin is connected with external pins. The process is as follows: sputtering of a layer of Cr, whirl coating, photoetching, developing, etching and overlay alignment symbols making; bonding of the magnetic core material, whirl coating, photoetching, developing, etching of the magnetic core material; fling, drying and solidifying of polyimide, and polishing; sputtering, whirl coating, photoetching, developing, galvanization, and manufacturing of the coil with a planar helical structure, lead wires and pins; fling, drying and solidifying of polyimide, and polishing; sputtering of a layer of Ti, whirl coating, photoetching, developing and etching; and bonding of the magnetic core material, whirl coating, photoetching, developing, and etching of the magnetic core material. The method greatly reduces the high-frequency loss of the micro-inductor and effectively improves the high-frequency property thereof.
Description
Technical field
The present invention relates to a kind of preparation method of micro-inductor device of microelectronics technology, specifically, that relate to is a kind of preparation method of micro-inductor device in planar magnetic core helical structure.
Background technology
Miniaturization portable type electronic product such as mobile communication product mobile phone CDMA (code division multiple access), portable notebook computer, networking products ADSL (ADSL), microprocessor, digital camera, flush memory device, sound equipment, charger etc. more and more receive the concern and the welcome in market in recent years.The miniaturization of these portable type electronic products, microminiaturization at first will be considered the miniaturization and the microminiaturization of electronic devices and components.Magnetic device such as inductance component and be must indispensable critical elements in the electronic circuit by its power transformer that constitutes, DC-DC converter, oscillator, filter, amplifier and tuner etc.; The power that inductance component microminiaturized and be to realize one of electronic equipment, electronic product small size, in light weight and high performance key with circuit integrated, the microminiaturized DC-DC converter that particularly is made up of the magnetic thin film micro-inductor device will be widely used in microprocessor among various portable type electronic products such as mobile phone CDMA, networking products ADSL, computer system/external equipment such as the notebook personal computer transmits and DVD etc., digital system such as 8mm video tape recorder etc.In general, conventional inductance component mostly adopts mechanical winding mode coiling around magnetic core, has that volume is big, weight is high, the low shortcomings such as (a few KHz) of operating frequency.Along with the raising of magnetic device operating frequency, the magnetic thin film micro-inductor device requires to be operated in more than the frequency 1MHz, and size is at 20mm
2Below, yet adopt conventional microelectric technique to be difficult on planar substrate, make high performance microminiaturized inductance component.In recent years; MEMS (MEMS) technology rapid development; Be that standard-LIGA process technology of master becomes the current a kind of state-of-the-art technology of developing microminiaturized sandwich construction micro element and RF-MEMS device in the world with the non-silicon materials of three-dimensional particularly, the MEMS technology provides a brand-new approach for little inductance of realizing small size, big inductance quantity and high-quality-factor.
Literature search through to prior art is found; People such as Daniel are at " IEEE TRANSACTIONS ONMAGNETICS " (U.S. electric electronic engineering association magazine) (VOL.37; NO.4, July, 2001; Pp.2897-2899) delivered " Micromachined Spiral Inductors Using UV-LIGA Techniques (adopting the little inductance of micromechanics snail of UV-LIGA technology) " literary composition on; This article is mentioned the little inductance of a kind of planar magnetic core helical structure, and its coil shape is the square spiral structure, the NiFe film of core material for electroplating.The author adopts MEMS technology and UV-LIGA technology, adopts Cu coil and the NiFe magnetic core electroplated, has developed the micro-inductor device in planar magnetic core helical structure that is of a size of 4.2mm*4.2mm, and inductance value is a μ H level under 1-1000kHz.Owing in manufacturing process, use wet chemical etching bottom, unavoidably bring the undercutting phenomenon to coil.And in manufacturing process, what the author used is semiclosed core structure, produces leakage field, exerts an influence for the performance of device, therefore is difficult to obtain high performance micro-inductor device.
Summary of the invention
The objective of the invention is to deficiency of the prior art; A kind of preparation method of micro-inductor device in planar magnetic core helical structure is proposed; Utilize the Fe base amorphous/nanocrystalline band of excellent performance to make magnetic core; Snail structure coil and separates with insulating material between two magnetic cores, and the high frequency performance of this structure micro-inductor device is greatly improved.
The present invention realizes through following technical scheme:
Micro-inductor device in planar magnetic core helical structure involved in the present invention comprises substrate, core material, insulating material, snail structure coil, lead-in wire, and core material comprises bottom core material and top layer core material.Snail structure coil separates between bottom core material and top layer core material and with insulating material; The bottom core material is positioned at the substrate top; The pin of snail structure coil extends to the outside of core material respectively through lead-in wire, between core material and the snail structure coil, between core material and the lead-in wire, all separate through insulating material between snail structure coil and lead-in wire and the external pin and support.
Said snail structure coil is square coil or circular coil; The width of coil-conductor is 20～60 μ m, and the thickness of coil-conductor is 10～20 μ m, and the spacing between the coil-conductor is 20～40 μ m; Coil turn is 10～30 circles, and the outside dimension of coil is less than the size of core material.
Said core material is Fe-based amorphous/nanocrystalline strip, and thickness is 10～30 μ m, is of a size of 3.4*3.4mm
2
Said insulating material is a polyimides.
Between said bottom core material and the substrate one deck binding material is arranged, binding material is an epoxy AB glue.
In the above-mentioned device of the present invention, polyimides not only insulate core material and snail structure coil, and play support platform.Polyimides adopts following technical process: gluing, even glue and high speed rotating, dry then, hot setting.
Micro-inductor device in planar magnetic core helical structure manufacture method involved in the present invention comprises the steps:
Step 1: the thick Cr layer of one side (being called the B face) sputter one deck 30～80nm of the glass substrate of crossing in clean, positive-glue removing AZ4000 series, the thickness of photoresist is 3～5 μ m, then photoresist is dried; With back side resist exposure, development, etching Cr layer in etching liquid is removed all photoresists with acetone then; Get rid of polyimides, thickness is 3～5 μ m, carries out polyimides baking and curing technology then, finally obtains the double-sided overlay alignment symbology;
Step 2: the another side (being called the A face) in glass substrate gets rid of epoxide resin AB glue, then core material is bonded on the A face of substrate, dries naturally; Following technology is all carried out at the A face;
Step 3: positive-glue removing, photoresist thickness are 5～10 μ m, and photoresist is dried; Exposure and development; Etching core material in acid etch liquid is removed photoresist and epoxide resin AB glue with acetone then, forms the magnetic core figure;
Step 4: get rid of polyimides, thickness is 20～40 μ m, carries out polyimides baking and curing technology then; The polishing polyimides, polishing back polyimide layer is higher than core material 5～6 μ m;
Step 5: sputtering deposit Cr/Cu Seed Layer on the polyimide layer after the polishing, thickness is 20nm/80nm;
Step 6: positive-glue removing, the thickness of photoresist are 10～20 μ m, and photoresist is dried; Exposure and development obtain snail structure coil pattern; Electroplate snail structure coil then, thickness is 10～20 μ m, and plated material is a copper;
Step 7: positive-glue removing, the thickness of photoresist are 5～6 μ m, then photoresist are dried; Exposure and development obtain hub of a spool pin and external pin figure; Electroplate coil center pin and external pin, thickness is 5～6 μ m, and plated material is a copper;
Step 8: remove all photoresists with acetone, with dry method RIE etching Cr/Cu Seed Layer;
Step 9: get rid of polyimides, thickness is 15～25 μ m, carries out polyimides baking and curing technology then; The polishing polyimides is till hub of a spool pin and external pin exposure; Sputtering deposit Cr/Cu Seed Layer, thickness are 20nm/80nm;
Step 10: positive-glue removing, photoresist thickness are 5～10 μ m, then photoresist are dried; Exposure and development obtain lead-in wire and external pin figure; Electroplate lead wire and external pin figure, plated material are copper, and thickness is 5～10 μ m;
Step 11: positive-glue removing, the thickness of photoresist are 5～6 μ m, then photoresist are dried; Make public and development, obtain the figure of the outside two pins of coil; Electroplate outside two pins, thickness is 5～6 μ m, and plated material is a copper;
Step 12: remove all photoresists with acetone, with dry method RIE etching Cr/Cu Seed Layer;
Step 13: get rid of polyimides, the thickness of polyimides is 10～20 μ m, carries out polyimides baking and curing technology then; The polishing polyimides is till two pins exposes;
Step 14: sputtering sedimentation one Ti layer, thickness is 100～300nm; Positive-glue removing, the thickness of photoresist are 3～5 μ m, then photoresist are dried; Exposure and development, etching Ti layer is removed photoresist with acetone in HF solution, forms the pin protective layer;
Step 15: get rid of epoxide resin AB glue, the core material that bonds then dries naturally;
Step 16: positive-glue removing on core material, photoresist thickness are 5～10 μ m, and photoresist is dried; Exposure and development; Etching core material in acid etch liquid forms the core material figure then;
Step 17: remove photoresist and epoxide resin AB glue with acetone; Fall the Ti layer with the HF solution corrosion, finally obtain micro-inductor device in planar magnetic core helical structure.
In step 1, step 4, step 9, the step 13; Said polyimides baking and curing technology; Be specially: elder generation's low speed was kept 10 seconds for 800 rev/mins when getting rid of polyimides, kept 30 seconds, and dried then for quick again 2000 rev/mins; Stoving process is that segmentation is incubated totally 3 hours between 120～200 ℃, under 250 ℃ of argon gas atmosphere, solidifies 2 hours then.
In step 14, the step 17, said HF solution, its volumetric concentration is 2%.
The present invention compared with prior art has following useful effect:
(1) the present invention has changed employing conventional method making micro-inductor device; And adopting MEMS technology development micro-inductor device, device has advantages such as operating frequency height, small size, low resistance, high inductance, high-quality-factor, low-loss, low cost and mass production;
(2) the present invention adopts the double layer planar core material, and snail structure coil and separates with insulating material between two core materials, greatly reduces the dispersion loss of inductance component, has effectively improved the high frequency characteristics of inductance component;
(3) core material of the present invention's employing is Fe-based amorphous/nanocrystalline strip, has excellent soft magnet performance, helps to improve the performance of device;
(4) the present invention has changed employing wet etching Seed Layer, and adopts dry method RIE etching Seed Layer, has avoided wet etching the undercutting phenomenon to occur, obtains uniform coil-conductor;
(5) the present invention adopts polishing technology, has improved the planarization of substrate, has solved the interconnection problems between coil-conductor and the pin well.
Description of drawings
Fig. 1 is a micro-inductor device in planar magnetic core helical structure structural representation of the present invention;
Fig. 2 is the sectional view of Fig. 1;
Among the figure: 1 is glass substrate, and 2 is core material, and 3 is snail structure coil, and 4 is the pin of snail structure coil, and 5 are lead-in wire, and 6 is external pin, and 7 is polyimides.
Embodiment
Below in conjunction with accompanying drawing embodiments of the invention are done detailed explanation: present embodiment is being to experimentize under the prerequisite with technical scheme of the present invention; Provided detailed execution mode and concrete operating process, but protection scope of the present invention is not limited to following embodiment.
Like Fig. 1, shown in Figure 2, present embodiment is made up of glass substrate 1, core material 2, snail structure coil 3, center pin 4, lead-in wire 5, polyimides 7, and core material comprises layer core material and top layer core material.Snail structure coil 3 was also opened with polyimides between bottom core material and top layer core material in 7 minutes, and promptly bottom core material and top layer core material are wrapped in snail structure coil 3.The bottom core material is arranged on glass substrate 1 plane, and the center pin 4 of snail structure coil 3 connects external pin 6 through lead-in wire 5 respectively.The center pin 4 of snail structure coil 3 links to each other with external pin 6 through lead-in wire 5.Between core material 2 and the snail structure coil 3, between core material 2 and the lead-in wire 5, snail structure coil 3 with go between 5 and external pin 6 between all opened and supported in 7 minutes through polyimides.
Said snail structure coil 3 be shaped as snail structure square coil or circular coil, the width of coil-conductor is 20～60 μ m, the thickness of coil-conductor is 10～20 μ m, 20～40 μ m, coil turn are 10～30 circles.
Core material is Fe-based amorphous/nanocrystalline strip, and thickness is 10～30 μ m, is of a size of 3.4*3.4mm
2
The spatial form of center pin 4 is a cuboid, highly is 15～25 μ m.
Between said bottom core material and the glass substrate 1 one deck binding material is arranged, binding material is an epoxy AB glue.
Above-mentioned micro-inductor device in planar magnetic core helical structure, its manufacture method is specially:
Embodiment 1:
The thick Cr layer of one side (being called the B face) sputter one deck 30nm of the glass substrate of (1) crossing in clean, positive-glue removing AZ4000 series, the thickness of photoresist is 3 μ m, then photoresist is dried; With back side resist exposure, development, etching Cr layer in etching liquid is removed all photoresists with acetone then; Get rid of polyimides, thickness is 3 μ m, carries out polyimides baking and curing technology then, finally obtains the double-sided overlay alignment symbology.
(2) another side (being called the A face) in glass substrate gets rid of epoxide resin AB glue, then core material is bonded on the A face of substrate, dries naturally.Following technology is all carried out at the A face;
(3) positive-glue removing, photoresist thickness are 5 μ m, and photoresist is dried; Exposure and development; Etching core material in acid etch liquid is removed photoresist and epoxide resin AB glue with acetone then, forms the magnetic core figure.
(4) get rid of polyimides, thickness is 20 μ m, carries out polyimides baking and curing technology then; The polishing polyimides, polishing back polyimide layer is higher than core material 5 μ m.
(5) sputtering deposit Cr/Cu Seed Layer on the polyimide layer after the polishing, thickness is 20nm/80nm.
(6) positive-glue removing, the thickness of photoresist are 10 μ m, and photoresist is dried; Exposure and development obtain snail structure coil pattern; Electroplate snail structure coil then, thickness is 10 μ m, and plated material is a copper.
(7) positive-glue removing, the thickness of photoresist are 5 μ m, then photoresist are dried; Exposure and development obtain hub of a spool pin and external pin figure; Electroplate coil center pin and external pin, thickness is 5 μ m, and plated material is a copper.
(8) remove all photoresists with acetone, with dry method RIE etching Cr/Cu Seed Layer.
(9) get rid of polyimides, thickness is 15 μ m, carries out polyimides baking and curing technology then; The polishing polyimides is till hub of a spool pin and external pin exposure.Sputtering deposit Cr/Cu Seed Layer, thickness are 20nm/80nm.
(10) positive-glue removing, photoresist thickness are 5 μ m, then photoresist are dried; Exposure and development obtain lead-in wire and external pin figure; Electroplate lead wire and external pin figure, plated material are copper, and thickness is 5 μ m.
(11) positive-glue removing, the thickness of photoresist are 5 μ m, then photoresist are dried; Make public and development, obtain the figure of the outside two pins of coil; Electroplate outside two pins, thickness is 5 μ m, and plated material is a copper.
(12) remove all photoresists with acetone, with dry method RIE etching Cr/Cu Seed Layer.
(13) get rid of polyimides, the thickness of polyimides is 10 μ m, carries out polyimides baking and curing technology then; The polishing polyimides is till two pins exposes.
(14) sputtering sedimentation one Ti layer, thickness is 100nm; Positive-glue removing, the thickness of photoresist are 5 μ m, then photoresist are dried; Exposure and development are at 2% (HF: H
2O=2ml: etching Ti layer in HF solution 100ml), remove photoresist with acetone, form the pin protective layer.
(15) get rid of epoxide resin AB glue, the core material that bonds then dries naturally.
(16) positive-glue removing on core material, photoresist thickness are 5 μ m, and photoresist is dried; Exposure and development; Etching core material in acid etch liquid forms the core material figure then.
(17) remove photoresist and epoxide resin AB glue with acetone; With 2% (HF: H
2O=2ml: HF solution corrosion 100ml) falls the Ti layer, finally obtains micro-inductor device in planar magnetic core helical structure.
Embodiment 2:
The thick Cr layer of one side (being called the B face) sputter one deck 50nm of the glass substrate of (1) crossing in clean, positive-glue removing AZ4000 series, the thickness of photoresist is 4 μ m, then photoresist is dried; With back side resist exposure, development, etching Cr layer in etching liquid is removed all photoresists with acetone then; Get rid of polyimides, thickness is 4 μ m, carries out polyimides baking and curing technology then, finally obtains the double-sided overlay alignment symbology.
(2) another side (being called the A face) in glass substrate gets rid of epoxide resin AB glue, then core material is bonded on the A face of substrate, dries naturally.Following technology is all carried out at the A face;
(3) positive-glue removing, photoresist thickness are 8 μ m, and photoresist is dried; Exposure and development; Etching core material in acid etch liquid is removed photoresist and epoxide resin AB glue with acetone then, forms the magnetic core figure.
(4) get rid of polyimides, thickness is 30 μ m, carries out polyimides baking and curing technology then; The polishing polyimides, polishing back polyimide layer is higher than core material 6 μ m.
(5) sputtering deposit Cr/Cu Seed Layer on the polyimide layer after the polishing, thickness is 20nm/80nm.
(6) positive-glue removing, the thickness of photoresist are 15 μ m, and photoresist is dried; Exposure and development obtain snail structure coil pattern; Electroplate snail structure coil then, thickness is 15 μ m, and plated material is a copper.
(7) positive-glue removing, the thickness of photoresist are 5 μ m, then photoresist are dried; Exposure and development obtain hub of a spool pin and external pin figure; Electroplate coil center pin and external pin, thickness is 5 μ m, and plated material is a copper.
(8) remove all photoresists with acetone, with dry method RIE etching Cr/Cu Seed Layer.
(9) get rid of polyimides, thickness is 20 μ m, carries out polyimides baking and curing technology then; The polishing polyimides is till hub of a spool pin and external pin exposure.Sputtering deposit Cr/Cu Seed Layer, thickness are 20nm/80nm.
(10) positive-glue removing, photoresist thickness are 8 μ m, then photoresist are dried; Exposure and development obtain lead-in wire and external pin figure; Electroplate lead wire and external pin figure, plated material are copper, and thickness is 8 μ m.
(11) positive-glue removing, the thickness of photoresist are 5 μ m, then photoresist are dried; Make public and development, obtain the figure of the outside two pins of coil; Electroplate outside two pins, thickness is 5 μ m, and plated material is a copper.
(12) remove all photoresists with acetone, with dry method RIE etching Cr/Cu Seed Layer.
(13) get rid of polyimides, the thickness of polyimides is 15 μ m, carries out polyimides baking and curing technology then; The polishing polyimides is till two pins exposes.
(14) sputtering sedimentation one Ti layer, thickness is 200nm; Positive-glue removing, the thickness of photoresist are 4 μ m, then photoresist are dried; Exposure and development are at 2% (HF: H
2O=2ml: etching Ti layer in HF solution 100ml), remove photoresist with acetone, form the pin protective layer.
(15) get rid of epoxide resin AB glue, the core material that bonds then dries naturally.
(16) positive-glue removing on core material, photoresist thickness are 8 μ m, and photoresist is dried; Exposure and development; Etching core material in acid etch liquid forms the core material figure then.
(17) remove photoresist and epoxide resin AB glue with acetone; With 2% (HF: H
2O=2ml: HF solution corrosion 100ml) falls the Ti layer, finally obtains micro-inductor device in planar magnetic core helical structure.
Embodiment 3:
The thick Cr layer of one side (being called the B face) sputter one deck 80nm of the glass substrate of (1) crossing in clean, positive-glue removing AZ4000 series, the thickness of photoresist is 5 μ m, then photoresist is dried; With back side resist exposure, development, etching Cr layer in etching liquid is removed all photoresists with acetone then; Get rid of polyimides, thickness is 5 μ m, carries out polyimides baking and curing technology then, finally obtains the double-sided overlay alignment symbology.
(2) another side (being called the A face) in glass substrate gets rid of epoxide resin AB glue, then core material is bonded on the A face of substrate, dries naturally.Following technology is all carried out at the A face;
(3) positive-glue removing, photoresist thickness are 10 μ m, and photoresist is dried; Exposure and development; Etching core material in acid etch liquid is removed photoresist and epoxide resin AB glue with acetone then, forms the magnetic core figure.
(4) get rid of polyimides, thickness is 40 μ m, carries out polyimides baking and curing technology then; The polishing polyimides, polishing back polyimide layer is higher than core material 6 μ m.
(5) sputtering deposit Cr/Cu Seed Layer on the polyimide layer after the polishing, thickness is 20nm/80nm.
(6) positive-glue removing, the thickness of photoresist are 20 μ m, and photoresist is dried; Exposure and development obtain snail structure coil pattern; Electroplate snail structure coil then, thickness is 20 μ m, and plated material is a copper.
(7) positive-glue removing, the thickness of photoresist are 6 μ m, then photoresist are dried; Exposure and development obtain hub of a spool pin and external pin figure; Electroplate coil center pin and external pin, thickness is 6 μ m, and plated material is a copper.
(8) remove all photoresists with acetone, with dry method RIE etching Cr/Cu Seed Layer.
(9) get rid of polyimides, thickness is 25 μ m, carries out polyimides baking and curing technology then; The polishing polyimides is till hub of a spool pin and external pin exposure.Sputtering deposit Cr/Cu Seed Layer, thickness are 20nm/80nm.
(10) positive-glue removing, photoresist thickness are 10 μ m, then photoresist are dried; Exposure and development obtain lead-in wire and external pin figure; Electroplate lead wire and external pin figure, plated material are copper, and thickness is 10 μ m.
(11) positive-glue removing, the thickness of photoresist are 6 μ m, then photoresist are dried; Make public and development, obtain the figure of the outside two pins of coil; Electroplate outside two pins, thickness is 6 μ m, and plated material is a copper.
(12) remove all photoresists with acetone, with dry method RIE etching Cr/Cu Seed Layer.
(13) get rid of polyimides, the thickness of polyimides is 20 μ m, carries out polyimides baking and curing technology then; The polishing polyimides is till two pins exposes.
(14) sputtering sedimentation one Ti layer, thickness is 300nm; Positive-glue removing, the thickness of photoresist are 5 μ m, then photoresist are dried; Exposure and development are at 2% (HF: H
2O=2ml: etching Ti layer in HF solution 100ml), remove photoresist with acetone, form the pin protective layer.
(15) get rid of epoxide resin AB glue, the core material that bonds then dries naturally.
(16) positive-glue removing on core material, photoresist thickness are 10 μ m, and photoresist is dried; Exposure and development; Etching core material in acid etch liquid forms the core material figure then.
(17) remove photoresist and epoxide resin AB glue with acetone; With 2% (HF: H
2O=2ml: HF solution corrosion 100ml) falls the Ti layer, finally obtains micro-inductor device in planar magnetic core helical structure.
Among the present invention, polyimides baking and curing technology is that elder generation's low speed was kept 10 seconds for 800 rev/mins when getting rid of polyimides, kept 30 seconds, and dried then for quick again 2000 rev/mins.Stoving process is that segmentation is incubated totally 3 hours between 120～200 ℃, under 250 ℃ of argon gas atmosphere, solidifies 2 hours then.
The present embodiment micro-inductor device in planar magnetic core helical structure: operating frequency is more than 1MHz, and inductance value is between 1-7 μ H.As being 18 circles when the number of turn of coil, coil-conductor width and gap are 30 μ m, when the thickness of coil-conductor is 20 μ m, under 1MHz inductance value greater than 3 μ H and quality factor greater than 2.
Claims (9)
1. the preparation method of a micro-inductor device in planar magnetic core helical structure; This micro-inductor device comprises: substrate, binding material, core material, insulating material, snail structure coil, lead-in wire; It is characterized in that core material comprises bottom core material and top layer core material; Snail structure coil separates between bottom core material and top layer core material and with insulating material; The bottom core material is positioned at substrate top, and the external pin of snail structure coil extends to the outside of core material respectively through lead-in wire, between core material and the snail structure coil, between core material and the lead-in wire, all separate through insulating material between snail structure coil and lead-in wire and the external pin and support; It is characterized in that said method comprises the steps:
Step 1: the thick Cr layer of B face sputter one deck 30～80nm of the glass substrate of crossing in clean, positive-glue removing AZ4000 series, the thickness of photoresist is 3～5 μ m, then photoresist is dried; With B face resist exposure, development, etching Cr layer in etching liquid is removed all photoresists with acetone then; Get rid of polyimides, thickness is 3～5 μ m, carries out polyimides baking and curing technology then, finally obtains the double-sided overlay alignment symbology;
Step 2: another A face in glass substrate gets rid of epoxide resin AB glue, then core material is bonded on the A face of substrate, dries naturally; Following technology is all carried out at the A face;
Step 3: positive-glue removing AZ4000 series, the thickness of photoresist is 5～10 μ m, and photoresist is dried; Exposure and development; Etching core material in acid etch liquid is removed photoresist and epoxide resin AB glue with acetone then, forms the magnetic core figure;
Step 4: get rid of polyimides, thickness is 20～40 μ m, carries out polyimides baking and curing technology then; The polishing polyimides, polishing back polyimide layer is higher than core material 5～6 μ m;
Step 5: sputtering deposit Cr/Cu Seed Layer on the polyimide layer after the polishing, thickness is respectively 20nm and 80nm;
Step 6: positive-glue removing AZ4000 series, the thickness of photoresist is 10～20 μ m, and photoresist is dried; Exposure and development obtain snail structure coil pattern; Electroplate snail structure coil then, thickness is 10～20 μ m, and plated material is a copper;
Step 7: positive-glue removing AZ4000 series, the thickness of photoresist is 5～6 μ m, then photoresist is dried; Exposure and development obtain hub of a spool pin and external pin figure; Electroplate coil center pin and external pin, thickness is 5～6 μ m, and plated material is a copper;
Step 8: remove all photoresists with acetone, with dry method RIE etching Cr/Cu Seed Layer;
Step 9: get rid of polyimides, thickness is 15～25 μ m, carries out polyimides baking and curing technology then; The polishing polyimides is till hub of a spool pin and external pin exposure; Sputtering deposit Cr/Cu Seed Layer, thickness is respectively 20nm and 80nm;
Step 10: positive-glue removing AZ4000 series, the thickness of photoresist is 5～10 μ m, then photoresist is dried; Exposure and development obtain lead-in wire and external pin figure; The figure of electroplate lead wire and external pin, plated material are copper, and thickness is 5～10 μ m;
Step 11: positive-glue removing AZ4000 series, the thickness of photoresist is 5～6 μ m, then photoresist is dried; Exposure with develop, obtain the figure of two pins of the outside of coil; Electroplate outside two pins, thickness is 5～6 μ m, and plated material is a copper;
Step 12: remove all photoresists with acetone, with dry method RIE etching Cr/Cu Seed Layer;
Step 13: get rid of polyimides, the thickness of polyimides is 10～20 μ m, carries out polyimides baking and curing technology then; The polishing polyimides is till the two pins of the outside of coil exposes;
Step 14: sputtering sedimentation one Ti layer, thickness is 100～300nm; Positive-glue removing, the thickness of photoresist are 3～5 μ m, then photoresist are dried; Exposure and development, etching Ti layer is removed photoresist with acetone in HF solution, forms the pin protective layer;
Step 15: get rid of epoxide resin AB glue, the core material that bonds then dries naturally;
Step 16: positive-glue removing on core material, photoresist thickness are 5～10 μ m, and photoresist is dried; Exposure and development; Etching core material in acid etch liquid forms the core material figure then;
Step 17: remove photoresist and epoxide resin AB glue with acetone; Fall the Ti layer with the HF solution corrosion, finally obtain micro-inductor device in planar magnetic core helical structure.
2. the preparation method of micro-inductor device in planar magnetic core helical structure as claimed in claim 1 is characterized in that, in step 1, step 4, step 9, the step 13; Said polyimides baking and curing technology; Be specially: elder generation's low speed was kept 10 seconds for 800 rev/mins when getting rid of polyimides, kept 30 seconds, and dried then for quick again 2000 rev/mins; Stoving process is that segmentation is incubated totally 3 hours between 120～200 ℃, under 250 ℃ of argon gas atmosphere, solidifies 2 hours then.
3. the preparation method of micro-inductor device in planar magnetic core helical structure as claimed in claim 1 is characterized in that, in step 14, the step 17, and said HF solution, its volumetric concentration is 2%.
4. the preparation method of described micro-inductor device in planar magnetic core helical structure as claimed in claim 1 is characterized in that, said snail structure coil is square coil or circular coil, and the outside dimension of coil is less than the size of core material.
5. like the preparation method of claim 1 or 4 described micro-inductor device in planar magnetic core helical structure; It is characterized in that; Said snail structure coil, the width of its coil-conductor are 20～60 μ m, and the thickness of coil-conductor is 10～20 μ m; Spacing between the coil-conductor is 20～40 μ m, and coil turn is 10～30 circles.
6. the preparation method of described micro-inductor device in planar magnetic core helical structure as claimed in claim 1 is characterized in that, said core material is Fe-based amorphous/nanocrystalline strip, and thickness is 10～30 μ m, is of a size of 3.4*3.4mm
2
7. the preparation method of described micro-inductor device in planar magnetic core helical structure as claimed in claim 1 is characterized in that, said insulating material is a polyimides.
8. the preparation method of described micro-inductor device in planar magnetic core helical structure as claimed in claim 1 is characterized in that, between said bottom core material and the substrate one deck binding material is arranged.
9. the preparation method of described micro-inductor device in planar magnetic core helical structure as claimed in claim 8 is characterized in that, said binding material is an epoxy AB glue.
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| CN101656147B (en) * | 2009-08-27 | 2012-03-07 | 上海交通大学 | Method for preparing soft magnetic alloy thin strip magnetic core solenoid micro inductor |
| CN102789967B (en) * | 2012-08-16 | 2014-09-24 | 中国电子科技集团公司第五十五研究所 | Manufacturing method for soft magnetic core spiral micro-inductor |
| CN103000362B (en) * | 2012-12-07 | 2016-02-24 | 北京大学 | A kind of preparation method of folding spiral inductance of the band magnetic core based on flexible substrate |
| CN103043599B (en) * | 2012-12-07 | 2015-10-28 | 北京大学 | A kind of preparation method of the spiral inductance based on flexible polymer substrate |
| CN103022018B (en) * | 2012-12-07 | 2015-04-15 | 中国电子科技集团公司第五十五研究所 | Production method of current tuned integrated magnetic film micro inductor and inductance tuning method |
| CN103647124A (en) * | 2013-11-28 | 2014-03-19 | 宝电电子(张家港)有限公司 | A filter |
| CN104681232A (en) * | 2013-12-03 | 2015-06-03 | 北京嘉岳同乐极电子有限公司 | Mini-type inductor and manufacturing method thereof |
| CN104936379A (en) * | 2015-07-01 | 2015-09-23 | 电子科技大学 | Fabrication method for embedding magnetic core induction of printed circuit board |
| CN106298180A (en) * | 2016-08-17 | 2017-01-04 | 上海交通大学 | The graphical planar magnetic core double layer planar micro-inductance of helical structure thin film and preparation method |
| CN109215979A (en) * | 2018-10-17 | 2019-01-15 | 安徽安努奇科技有限公司 | A kind of patch type inductance and preparation method thereof |
| CN113460955B (en) * | 2021-06-30 | 2024-03-08 | 上海交通大学 | Method for manufacturing fast microcomputer electromagnetic passgate chip |
| CN114334429B (en) * | 2021-12-14 | 2022-11-08 | 华萃微感电子(江苏)有限公司 | High-strength integrally-formed micro-inductor preparation process |
| CN114999762B (en) * | 2022-06-09 | 2023-05-02 | 河南理工大学 | Soft magnetic film iron core, preparation method thereof and sensor |
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| CN1564276A (en) * | 2004-04-22 | 2005-01-12 | 上海交通大学 | Mini magnetic core solenoidal microinduction element and its prepn. method |
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