CN1216386C - Mini magnetic core solenoidal microinduction element and its prepn. method - Google Patents
Mini magnetic core solenoidal microinduction element and its prepn. method Download PDFInfo
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- CN1216386C CN1216386C CN 200410017852 CN200410017852A CN1216386C CN 1216386 C CN1216386 C CN 1216386C CN 200410017852 CN200410017852 CN 200410017852 CN 200410017852 A CN200410017852 A CN 200410017852A CN 1216386 C CN1216386 C CN 1216386C
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Abstract
The present invention provides a minitype magnetic core solenoidal micro-induction element and a preparation method thereof. The micro-induction element is composed of a substrate, a pin, a coil and a magnetic core, wherein two sets of connected three-dimensional stereo solenoid coils are symmetrically circled on the rectangle or annular closed magnetic core. The coil and the pin are arranged on a substrate plane. The coil is formed by the connection of a bottom-layer coil and a top-layer coil through a connected conductor. The bottom-layer coil, the top-layer coil and the connected conductor are separated by polyimide insulation materials and the magnetic core. Coils are separated by the polyimide insulation materials. During a manufacturing process, the following technology processing is adopted: a silicon chip is processed to obtain alignment symbols engraved on both sides; by adopting the technology of physical etching seed layer, polishing technology and a secondary electroplating method, a connected conductor is obtained. The present invention solves a problem of the stereo winding of the coil and the insulation among layers and an electrical plating problem for the high ratio of depth to width to greatly improve inductance performance.
Description
Technical field
The present invention relates to a kind of microminiaturized magnetic core solenoid micro inductor spare and preparation method thereof, the microminiaturized magnetic core micro-inductor device of preparation is a key element of realizing microminiaturized DC-DC converter, can be widely used in the power supply device of radio communication, military affairs/aero-space instrument equipment, computer/external equipment and other various portable type electronic products.Belong to microelectronics technology.
Background technology
Miniaturization portable type electronic product such as mobile communication product mobile phone CDMA (CodeDivision Multiple Access in recent years, code division multiple access), portable notebook computer, networking products ADSL (Asymmetrical Digital Subscriber Loop, ADSL (Asymmetric Digital Subscriber Line)), microprocessor, digital camera, flush memory device, sound equipment, charger etc. more and more receive the welcome and the concern in market.The miniaturization of these portable type electronic products, microminiaturization at first will be considered the miniaturization and the microminiaturization of electronic devices and components.Magnetic device such as inductance component and the power transformer that constitutes by it, the DC-DC converter, oscillator, filter, amplifier and tuner etc. are indispensable critical elements in the electronic circuit, inductance component microminiaturized and with the integrated of circuit be to realize electronic equipment, the electronic product small size, one of in light weight and high performance key, particularly the microminiaturized DC-DC converter that is made of the magnetic thin film micro-inductor device will be widely used in various portable type electronic products such as mobile phone CDMA, networking products ADSL, transmission of the power of microprocessor and DVD etc. among computer system/external equipment such as the notebook personal computer, digital system such as 8mm video tape recorder etc.Generally speaking, conventional inductance component mostly adopts mechanical winding mode coiling around magnetic core, has the low shortcomings such as (a few KHz) of big, the high weight of volume, cost height and operating frequency.The magnetic thin film micro-inductor device requires operating frequency more than 1MHz, and size adopts conventional microelectric technique to be difficult in and makes high performance microminiaturized inductance component on the planar substrate below 2mm.In recent years, MEMS (micro electro mechanical system) (MEMS) technology rapid development, particularly standard-LIGA the process technology based on the non-silicon materials of three-dimensional becomes the current a kind of state-of-the-art technology of developing microminiaturized sandwich construction micro element and RF MEMS device in the world.As (C.H.Ahn such as Ahn, Y.J.Kim, M.G.Allen, A Fully Integrated PlanarToroidal Inductor with a Micromachined Nickel-Iron Magnetic Bar, IEEE Trans.Magn., Vol.17, No.3,1994, pp.463-469.) adopt MEMS technology and reactive ion etching (RIE) technology, by the method for electro-coppering coil and iron nickel magnetic core, developed the solenoid micro inductor spare that is of a size of 4mm * 1mm, inductance value is 0.4 μ H under 10kHz.Owing in manufacturing process, use wet chemical etching bottom, unavoidably bring the undercutting phenomenon to coil.And in manufacture process, the insulating material curing temperature that the author uses will exert an influence to the performance of coil and magnetic core up to 350 ℃, therefore is difficult to obtain high performance micro-inductor device.
Summary of the invention
The objective of the invention is at the deficiency of the prior art and the market demand, propose a kind of microminiaturized magnetic core solenoid micro inductor spare and preparation method thereof, make the micro-inductor device that obtains have low resistance, high inductance, high-quality-factor and high efficiency, low-loss characteristics.
For realizing such purpose, the present invention utilizes the micro-electromechanical system (MEMS) technology, silicon chip to two-sided oxidation is handled, obtain the double-sided overlay alignment symbology,, adopt the physical etchings technology to go Seed Layer so that when exposure improved alignment precision, the undercutting phenomenon of avoiding wet-etching technology to bring, adopt polishing technology and second time electroplating method, obtain bonding conductor, prepare high-quality microminiaturized magnetic core solenoid micro inductor spare.
Micro-inductor device of the present invention is mainly by substrate, pin, and coil, magnetic core are formed, two groups of 3 D stereo solenoid coils that link to each other of symmetrical coiling on the closed magnetic core of annular, coil and pin are arranged on the substrate plane.Coil is connected to form by bonding conductor by bottom coil and top layer coil, and bottom coil, top layer coil and bonding conductor separate by polyimide foam insulation and magnetic core, separates by polyimide foam insulation between coil and the coil.
The width of bottom coil of the present invention and top layer coil is 15～25 μ m, and the conductor thickness of each circle is 5～20 μ m, and the spacing between each circle is 15～25 μ m, and the number of turn is 38～42 circles.
The spatial form of bonding conductor of the present invention is a four prisms cylinder, and thickness is 40～70 μ m.
Soft magnetic material such as the permalloy of core material for electroplating, thickness is 20～40 μ m.
Polyimide foam insulation not only insulate magnetic core and upper and lower layer line circle, and play support platform.Polyimides adopts following technical process: gluing, even glue and high speed rotating, dry then, hot setting.
It is specific as follows that the present invention makes the technology of MEMS magnetic core solenoid micro inductor spare:
1, the two-sided positive-glue removing AZ4000 of the silicon chip substrate series of the two-sided oxidation of crossing in clean, photoresist thickness is 5 μ m, then photoresist is dried; After exposure, developing, etching silicon dioxide in corrosive liquid is removed all photoresists with acetone at last, obtains the double-sided overlay alignment symbology with the silicon chip bottom surface.
2, deposit Cr/Cu bottom coil Seed Layer on silicon chip, thickness is 100nm.Following technology is all carried out on this face.
3, positive-glue removing, photoresist thickness are 8 μ m, and the photoresist on the substrate base is dried; After exposure and the development, obtain the bottom coil figure; Electro-coppering bottom coil then, thickness is 5 μ m.
4, positive-glue removing, the thickness of photoresist are 20 μ m, then photoresist are dried; After exposure and the development, obtain the figure of pin and bonding conductor; Electroplate pin and bonding conductor at last, thickness is 15 μ m, and plated material is a copper.
5, remove all photoresists with acetone after, with physical etchings method etching Cr/Cu bottom coil Seed Layer.
6, get rid of polyimides, curing and polishing, polyimides thickness is 20 μ m, and stoving process is that segmentation is incubated 3 hours between 120～200 ℃, solidifies 2 hours under 250 ℃ of argon gas atmosphere then, cools off with stove at last; The polishing polyimides is till bonding conductor and pin exposure.
7, sputter Cr/Cu magnetic core Seed Layer, thickness is 100nm; Positive-glue removing, photoresist thickness are 20 μ m, then photoresist are dried; After exposure and the development, obtain the magnetic core figure; Electroplate magnetic core at last, material is a permalloy, and thickness is 20 μ m.
8, positive-glue removing, the thickness of photoresist are 15 μ m, then photoresist are dried; After exposure and the development, obtain the figure of pin and bonding conductor; Electroplate pin and bonding conductor at last, thickness is 30 μ m, and plated material is a copper.
9, remove all photoresists with acetone after, with physical etchings method etching Cr/Cu magnetic core Seed Layer.
10, get rid of polyimides, curing and polishing, polyimides thickness is 40 μ m, and stoving process is that segmentation is incubated 3 hours between 120～200 ℃, solidifies 2 hours under 250 ℃ of argon gas atmosphere then, cools off with stove at last; The polishing polyimides is till pin and bonding conductor exposure.
11, sputter Cr/Cu top layer coil Seed Layer, thickness is 100nm; Positive-glue removing, photoresist thickness are 8 μ m, then photoresist are dried; After exposure and the development, obtain the figure of top layer coil; Last electroplating topping coil, thickness is 5 μ m, plated material is a copper.
12,,, finally obtain magnetic core solenoid micro inductor spare with physical etchings method etching Cr/Cu top layer coil Seed Layer with behind the acetone removal photoresist.
In the inventive method, elder generation's low speed 800 maintenance handovers were held 10 seconds when getting rid of polyimides, and quick again 2000 maintenance handovers were held 30 seconds, dried then, solidified.
The present invention compared with prior art has following useful effect:
(1) the present invention has changed traditional employing method for winding making micro-inductor device, and adopt MEMS technology development micro-inductor device, have operating frequency height, the resistance that size is little, low, high advantages such as inductance value, high-quality-factor, high efficiency, low-loss, low cost and mass production;
(2) the present invention has changed employing wet etching Seed Layer, and adopts physical method etching Seed Layer, has avoided wet etching the undercutting phenomenon to occur, obtains the uniform conductor of coil;
(3) the present invention adopts the double-sided overlay technology, has improved the precision of photoetching greatly;
(4) the present invention adopts the second time electroplating bonding conductor, efficiently solves the problem of the advanced expanded letter of electroplating the bonding conductor appearance in the prior art;
(5) the present invention adopts polishing technology, has improved the planarization of substrate, has solved the problem that opening circuit appears in connection between bonding conductor and the coil well.
Description of drawings
Fig. 1 is a micro-inductor device structural representation of the present invention.Among Fig. 1,1 is substrate, and 2 is pin, and 3 is coil, and 4 is magnetic core.
Fig. 2 is that Fig. 1 structure is along A-A direction cut-away view.Among Fig. 2,1 is substrate, and 4 is magnetic core, and 5 is bottom coil, and 6 is polyimide foam insulation, and 7 is connector, and 8 is top layer coil.
Fig. 3 is positive-glue removing in the inventive method step 1, exposure, developing process schematic diagram.Among Fig. 3,1 is substrate, and 9 is positive glue.
Fig. 4 is etching SiO in the step 1
2And deluster and carve the adhesive process schematic diagram.Among Fig. 4,10 is the alignment figure.
Fig. 5 is deposit Cr/Cu in step 2～3, positive-glue removing, exposure, development, electroplating ground loop process schematic representation.Among Fig. 5,5 is bottom coil; 11 is Cr/Cu bottom coil Seed Layer; 12 is positive glue.
Fig. 6 is positive-glue removing, exposure, development in the step 4, electroplates pin and bonding conductor process schematic representation.Among Fig. 6,2 is pin; 7 is connector; 13 is positive glue.
Fig. 7 removes positive glue and etching technics schematic diagram in the step 5.
Fig. 8 is polyimide curing and a glossing schematic diagram in the step 6.Among Fig. 8,6 is polyimides.
Fig. 9 deposits Cr/Cu, positive-glue removing, exposure, development, electroplating technology schematic diagram in the step 7.Among Fig. 9,4 is magnetic core; 14 is Cr/Cu magnetic core Seed Layer; 15 is positive glue.
Figure 10 is positive-glue removing, exposure, development in the step 8, electroplates pin and bonding conductor process schematic representation.Among Figure 10,2 is pin; 7 is connector; 15 is positive glue.
Figure 11 removes positive glue and etching technics, polyimide curing and glossing schematic diagram in step 9～10.Among Figure 11,6 is polyimides.
Figure 12 is sputter Cr/Cu in the step 11, positive-glue removing, exposure, development, electroplating topping Cu coil process schematic diagram.Among Figure 12,8 is top layer coil; 17 is Cr/Cu top layer coil Seed Layer; 18 is positive glue.
Figure 13 removes positive glue and etching technics schematic diagram in the step 12.
Embodiment
Below in conjunction with accompanying drawing concrete structure of the present invention is further described.
Micro-inductor device structure of the present invention as shown in Figure 1, by substrate 1, pin 2, solenoid coil 3, magnetic core 4 are formed, solenoid coil 3 is based on substrate 1, two groups of 3 D stereo solenoid coils 3 that link to each other of symmetrical coilings around the magnetic core 4 of rectangle closure, and the two ends of solenoid coil 3 connect pin 2.
Fig. 2 be Fig. 1 structure along A-A direction cut-away view, shown the longitudinal stereoscopic structure at solenoid coil of the present invention 3 places.As shown in Figure 2, bottom coil 5 is set on the plane of substrate 1, coiling 3 D stereo solenoid coil 3 around the magnetic core 4, solenoid coil 3 is connected to form by bonding conductor 7 by bottom coil 5, top layer coil 8, and bottom coil 5, top layer coil 8, bonding conductor 7 all separate by polyimide foam insulation 6 and magnetic core 4.
The spatial form of bonding conductor 7 is a four prisms cylinder, highly is 40 μ m.
Fig. 3～13 have provided the development technology of above-mentioned microminiaturized magnetic core solenoid micro inductor spare, concretely: (1) clean cross the silicon chip substrate 1 of two-sided oxidation two-sided on positive-glue removing 9, as shown in Figure 3.The thickness of photoresist is 5 μ m, and the photoresist bake out temperature is 95 ℃, and the time is 1 hour; Single face exposure with develop after, etching silicon dioxide and remove photoresist obtains alignment symbol 10 as shown in Figure 4; (2) deposit Cr/Cu bottom coil Seed Layer 11, and as shown in Figure 5, thickness is 100nm; (3) positive-glue removing 12, and as shown in Figure 5, photoresist thickness is 8 μ m, and with the substrate base oven dry, the temperature of stoving process is 95 ℃, and drying time is 1 hour; After exposure and the development, obtain the bottom coil figure; Electroplating ground loop 5 then, and as shown in Figure 5, thickness is 5 μ m, and plated material is a copper; (4) positive-glue removing 13, and as shown in Figure 6, the thickness of photoresist is 20 μ m, and in stoving process, bake out temperature is 90 ℃, and the time is 2 hours; After exposure and the development, obtain the figure of pin and bonding conductor; Electroplate pin 2 and bonding conductor 7 then, as shown in Figure 6, thickness is 15 μ m, and plated material is a copper; (5) with acetone photoresist 12,13 is removed after, with physical etchings method etching Cr/Cu bottom coil Seed Layer 11, obtain figure shown in Figure 7; (6) get rid of polyimides 6, solidify and polishing, as shown in Figure 8, polyimides thickness is 20 μ m, stoving process be 120 ℃, 150 ℃, 180 ℃ each 1 hour, under 250 ℃ of argon gas atmosphere, solidified 2 hours then, cool off with stove at last; Polishing polyimides 6 is till pin 2 and bonding conductor 7 exposures; (7) sputter Cr/Cu magnetic core Seed Layer 14, and as shown in Figure 9, thickness is 100nm; Positive-glue removing 15, as shown in Figure 9, photoresist thickness is 20 μ m, and bake out temperature is 95 ℃, and the time is 1 hour; After exposure and the development, obtain the magnetic core figure; Electroplate magnetic core permalloy 4 at last, as shown in Figure 9, thickness is 20 μ m; (8) positive-glue removing 16, and as shown in figure 10, the thickness of photoresist is 15 μ m, and bake out temperature is 90 ℃, and the time is 2 hours; After exposure and the development, obtain the figure of pin and bonding conductor; Electroplate pin 2 and bonding conductor 7 at last, as shown in figure 10, thickness is 30 μ m, and plated material is a copper; (9) with acetone photoresist 15,16 is removed after, with physical etchings method etching Cr/Cu magnetic core Seed Layer 14; (10) get rid of polyimides 6, solidify and polishing, as shown in figure 11, polyimides thickness is 40 μ m, stoving process be 120 ℃, 150 ℃, 180 ℃ each 1 hour, under 250 ℃ of argon gas atmosphere, solidified 2 hours then, cool off with stove at last; The polishing polyimides is till pin 2 and bonding conductor 7 exposures; (11) sputter Cr/Cu top layer coil Seed Layer 17, and as shown in figure 12, thickness is 100nm; Positive-glue removing 18, as shown in figure 12, photoresist thickness is 8 μ m, and bake out temperature is 95 ℃, and the time is 1 hour; Expose and development, obtain the figure of top layer coil; Last electroplating topping coil 8, as shown in figure 12, thickness is 5 μ m, plated material is a copper; (12) with acetone photoresist 18 is removed after, with physical etchings method etching Cr/Cu top layer coil Seed Layer 17, finally obtain magnetic core solenoid micro inductor spare as shown in figure 13.
Among the embodiment, elder generation's low speed 800 maintenance handovers were held 10 seconds when getting rid of polyimides, and quick again 2000 maintenance handovers were held 30 seconds, dried then, solidified.
Claims (3)
1, a kind of microminiaturized magnetic core solenoid micro inductor spare, comprise substrate (1), pin (2), coil (3), magnetic core (4), it is characterized in that upward two groups of 3 D stereo solenoid coils (3) that link to each other of symmetrical coiling of the closed magnetic core (4) of annular, coil (3) is based on substrate (1), by bottom coil (5), top layer coil (8) is connected to form by bonding conductor (7), the two ends of coil (3) connect pin (2), the bottom coil (5) of coil (3), top layer coil (8), bonding conductor (7) all separates by polyimide foam insulation (6) and magnetic core (4); The width of each circle conductor of described coil (3) is 20 μ m, and thickness is 5 μ m, is spaced apart 20 μ m between each circle, and the number of turn is 42 circles; Described magnetic core (4) material is a permalloy, and thickness is 20 μ m.
2, a kind of preparation method of microminiaturized magnetic core solenoid micro inductor spare as claimed in claim 1 is characterized in that comprising the steps:
1) at the two-sided positive-glue removing of the silicon chip substrate of two-sided oxidation, the thickness of photoresist is 5 μ m, then photoresist is dried; Substrate is after the single face exposure and developing, and etching silicon dioxide removes photoresist, obtains alignment figure (10);
2) deposit Cr/Cu bottom coil Seed Layer (11), thickness is 100nm;
3) positive-glue removing, photoresist thickness are 8 μ m, and the photoresist on the substrate is dried; After exposure and the development, obtain the bottom coil figure; Last electro-coppering bottom coil (5), thickness is 5 μ m;
4) positive-glue removing, the thickness of photoresist are 20 μ m, then photoresist are dried; After exposure and the development, obtain the figure of pin and bonding conductor; Electroplate pin (2) and bonding conductor (7) at last, thickness is 15 μ m, and plated material is a copper;
5) with behind the acetone removal photoresist, with physical etchings method etching Cr/Cu bottom coil Seed Layer (11);
6) get rid of polyimides (6), thickness is 20 μ m, stoving process be 120 ℃, 150 ℃, 180 ℃ each 1 hour, under 250 ℃ of argon gas atmosphere, solidified 2 hours then, cool off with stove at last; Polishing polyimides (6) is till pin (2) and bonding conductor (7) exposure;
7) sputter Cr/Cu magnetic core Seed Layer (14), thickness is 100nm; Positive-glue removing, photoresist thickness are 20 μ m, then photoresist are dried; After exposure and the development, obtain the magnetic core figure; Electroplate magnetic core (4) at last, material is a permalloy, and thickness is 20 μ m;
8) positive-glue removing, the thickness of photoresist are 15 μ m, then photoresist are dried; After exposure and the development, obtain the figure of pin and bonding conductor; Electroplate pin (2) and bonding conductor (7) at last, thickness is 30 μ m, and plated material is a copper;
9) with behind the acetone removal photoresist, with physical etchings method etching Cr/Cu magnetic core Seed Layer (14);
10) get rid of polyimides (6), thickness is 40 μ m, stoving process be 120 ℃, 150 ℃, 180 ℃ each 1 hour, under 250 ℃ of argon gas atmosphere, solidified 2 hours then, cool off with stove at last; The polishing polyimides is till pin (2) and bonding conductor (7) exposure;
11) sputter Cr/Cu top layer coil Seed Layer (17), thickness is 100nm; Positive-glue removing, photoresist thickness are 8 μ m, then photoresist are dried; After exposure and the development, obtain the figure of top layer coil; Last electro-coppering top layer coil (8), thickness is 5 μ m;
12) with behind the acetone removal photoresist,, finally obtain magnetic core solenoid micro inductor spare with physical etchings method etching Cr/Cu top layer coil Seed Layer (17).
3, the preparation method of microminiaturized magnetic core solenoid micro inductor spare as claimed in claim 2, elder generation's low speed 800 maintenance handovers were held 10 seconds when it is characterized in that getting rid of polyimides, and quick again 2000 maintenance handovers were held 30 seconds, dried then, solidified.
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| CN 200410017852 CN1216386C (en) | 2004-04-22 | 2004-04-22 | Mini magnetic core solenoidal microinduction element and its prepn. method |
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Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101060027B (en) * | 2007-05-15 | 2011-04-27 | 东南大学 | Micro-electromechanical inductor for suppressing the substrate eddy effect and its manufacture method |
| CN101477873B (en) * | 2008-09-25 | 2012-02-15 | 上海交通大学 | Preparation of micro-inductor device in planar magnetic core helical structure |
| CN101907690A (en) * | 2010-07-28 | 2010-12-08 | 上海交通大学 | Miniaturized amorphous magnetically soft alloy magnetic core solenoid flux gate sensor |
| CN101885467B (en) * | 2010-07-28 | 2012-06-27 | 上海交通大学 | Manufacturing method of micro fluxgate sensor with amorphous magnetic core |
| CN111403168A (en) * | 2020-03-25 | 2020-07-10 | 电子科技大学 | Manufacturing method of magnetic film annular inductor |
| CN112599321B (en) * | 2020-12-19 | 2024-05-14 | 北京航空航天大学 | Miniature three-dimensional solenoid transformer and digital isolator |
| CN113077981B (en) * | 2021-03-04 | 2023-04-14 | 电子科技大学 | Preparation method of thin film inductor with high inductance value, high Q value and high resonant frequency |
| CN115248403A (en) * | 2022-06-27 | 2022-10-28 | 上海阿芮斯智能科技有限公司 | MEMS fluxgate sensor based on conical magnetic gathering device and manufacturing method thereof |
| CN116022731B (en) * | 2023-02-17 | 2023-07-07 | 西南应用磁学研究所(中国电子科技集团公司第九研究所) | Manufacturing method of MEMS fluxgate sensor based on WLP (wafer level packaging) process |
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