CN1253611C - 氮化镓单晶膜的制造方法 - Google Patents
氮化镓单晶膜的制造方法 Download PDFInfo
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- CN1253611C CN1253611C CN 01116770 CN01116770A CN1253611C CN 1253611 C CN1253611 C CN 1253611C CN 01116770 CN01116770 CN 01116770 CN 01116770 A CN01116770 A CN 01116770A CN 1253611 C CN1253611 C CN 1253611C
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- gallium nitride
- substrate
- gan
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN 01116770 CN1253611C (zh) | 2001-04-24 | 2001-04-24 | 氮化镓单晶膜的制造方法 |
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CN 01116770 CN1253611C (zh) | 2001-04-24 | 2001-04-24 | 氮化镓单晶膜的制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN1382838A CN1382838A (zh) | 2002-12-04 |
CN1253611C true CN1253611C (zh) | 2006-04-26 |
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CN 01116770 Expired - Fee Related CN1253611C (zh) | 2001-04-24 | 2001-04-24 | 氮化镓单晶膜的制造方法 |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1313654C (zh) * | 2004-06-02 | 2007-05-02 | 中国科学院半导体研究所 | 生长高阻氮化镓外延膜的方法 |
CN1300387C (zh) * | 2004-11-12 | 2007-02-14 | 南京大学 | 无掩膜横向外延生长高质量氮化镓 |
CN100454490C (zh) * | 2006-09-30 | 2009-01-21 | 中国科学院合肥物质科学研究院 | 自剥离氮化镓衬底材料的制备方法 |
CN102465334A (zh) * | 2010-11-19 | 2012-05-23 | 广东德豪润达电气股份有限公司 | 一种氮化镓基led外延层的生长方法 |
CN105719946A (zh) * | 2014-12-03 | 2016-06-29 | 广东昭信半导体装备制造有限公司 | 一种GaN复合衬底制备方法 |
CN114214663B (zh) * | 2022-01-06 | 2024-06-14 | 武汉工程大学 | 一种氮空位修饰的氮化镍电催化材料及其制备方法与应用 |
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2001
- 2001-04-24 CN CN 01116770 patent/CN1253611C/zh not_active Expired - Fee Related
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CN1382838A (zh) | 2002-12-04 |
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Owner name: FANGDA GROUP CO LTD Free format text: FORMER OWNER: FANGDA-FUKE INFORMATION MATERIAL CO LTD, JIANGXI Effective date: 20060519 |
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Owner name: SHENZHEN CITY FANGDA GUOKE OPTOELECTRONICS TECHNO Free format text: FORMER OWNER: FANGDA GROUP CO LTD Effective date: 20070810 |
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Effective date of registration: 20070810 Address after: 518055 Shenzhen Nanshan District City Xili Town, Longjing Fangda Patentee after: Shenzhen Fangda Guoke Optical Electronic Technology Co., Ltd. Address before: 518055 Guangdong city of Shenzhen province Nanshan District Xili Town, Longjing Fangda industrial city Patentee before: Fangda Group Co., Ltd. |
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