CN1249506A - 相位改变光盘 - Google Patents
相位改变光盘 Download PDFInfo
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Abstract
一种相位改变光盘,具有一第一介电层、一记录层、一第二介电层、一反射层和一保护层,其特征在于该反射层包括由具有1.9至3.0的负电性的一金属或其合金制成的一第一反射层和一由Cu、Ag或其合金制成的一第二反射层,该第一反射层与第二介电层紧密接触,且该第二反射层与第一反射层和该保护层紧密接触。
Description
本发明涉及一种相位改变光盘；且更具体地，涉及一种包括一双分层的反射层且具有优良的耐腐蚀性、循环性和信号重现精度的可重写相位改变光盘。
光盘通常具有图1中所示的结构，且在信息记录区(1)中，在一基底(10)的迹道上形成数字信息形成坑(11)。然后在其上顺序地形成一反射层(12)和一保护层(13)，如图2所示。
随着CD-ROM的改进，对可有效地容纳例如视频图象、静止图象和动画的有关多媒体的软件的可重写记录介质的需求日益增多。结果，开发出可被重复地记录和擦除的CD-RW(可重写紧致盘)。该CD-RW包括磁光型盘、相位改变型光盘和诸如此类。相位改变光盘利用可经受响应于例如激光束的光在晶相和非晶相之间的相位改变的记录材料，且该种光盘和与常规的CD结合使用的信息记录机构相兼容。
在相位改变盘中，通过用一受控的激光束辐射在晶相/非晶相之间互相转换记录坑的相位，信息可被记录在一记录层上或从该记录层上擦除。如图3所示，一常规的相位改变盘具有一第一介电层(21)、一记录层(22)、一第二介电层(23)、一反射层(24)和一保护层(25)，这些层被顺序地形成在一透明基底(20)上。当一激光束进行辐射以使将记录层的一特定区的相位从晶态转换成非晶态时，记录层中这些迹道包含形成在其上的记录信号，或反之亦然。
这种相位改变光盘(对于其短波长激光束和一单光学系统可被采用)可应用于下一代高密度可重写光盘，例如DVD-RAM(数字视频盘一随机存取存储器)。
在常规的相位改变光盘中，使用一Al合金或Ag以形成一具有有限的性能特性的相对厚的反射层。然而，使用由薄A1合金膜制成的一反射层可导致具有不令人满意的记录特性的盘，而由薄Ag膜制成的一反射层倾向于呈现较差的耐腐蚀性。
因此，存在有对开发一种包括一耐腐蚀且拥有改进的记录特性的薄反射层的相位改变光盘的需求。
因此，本发明的主要目的是提供一种具有优良的记录特性以及耐腐蚀性的相位改变光盘。
根据本发明，提供有一种相位改变光盘，具有一第一介电层、一记录层、一第二介电层、一反射层和一保护层，其特征在于该反射层包括由具有1.9至3.0的负电性的一金属或其合金制成的一第一反射层和一由Cu、Ag或其合金制成的一第二反射层，该第一反射层与第二介电层紧密接触，且该第二反射层与第一反射层和该保护层紧密接触。
通过以下结合附图进行的详细描述，本发明的这些和其他的优点将变得显然。
图1示出了一常规的光盘的概略性视图；
图2给出了沿A-A’截取的图1的放大的截面视图；
图3示出了说明一常规的相位改变光盘的分层结构的概略性视图；
图4给出了根据本发明的一实施例的相位改变光盘的概略性视图；
图5提供了一相位改变光盘中的重写过程的概略性视图；
图6例示了在本发明的例子中使用的激光束的多相位构成；
图7给出了在一加速老化试验中生成的一Ag反射层的腐蚀表面的SEM相片；
图8用图表示了在比较例10中制备的相位改变盘的播放信号的波型，其中采用具有750埃厚度的一单个Al-Ti反射层；
图9描述了对应于图8的，评估的用于播放的信号的理想的波型；
图10示出了包含各种不同厚度的一单个Al-Ti反射层的比较例的盘的模拟的加热-冷却特性；
图11记录了对于具有一Ag单反射层(■)的相位改变盘和在例10中制备的具有Al-Ti第一反射层和一Ag第二反射层(●)的盘的加速的老化试验；
图12说明了作为在比较例15至18的盘中采用的Al-Cr单反射层的厚度的函数的重写抖动值和循环性的改变；
图13示出了记录功率对在比较例15至18的盘中采用的Al-Cr单反射层的厚度的从属性；
图14示出了作为在例15至19和比较例19的盘中采用的Cu第二反射层的厚度的函数的重写抖动值和循环性的改变；
图15示出了在例20(■)和比较例22(●)及23(▲)中制备的相位改变光盘的抖动值对重写循环数的从属性。
参见图4，根据本发明的一实施例中的相位改变光盘包括一第一介电层(31)、一记录层(32)、一第二介电层(33)、一第一反射层(34)、一第二反射层(35)和一保护层(36)，它们已此次序被顺序地形成在一透明的基底(30)上。
采用一聚碳酸酯树脂，通过一常规的注入模制方法制备本发明中可被使用的该基底。在该基底上形成的槽的宽度和深度的设计考虑到影响盘的记录和播放特性的伺服特性。特别是，当在记录中使用陆和槽两者时，这些槽的深度应被设在λ/5n-λ/7n(λ＝记录/播放光的波长，n＝一聚碳酸酯基底的折射率)以防止串扰现象。
光盘的介电层应是光学上透明的且阻热。在形成本发明盘的介电层中可使用的介电材料最好具有高热稳定性，光吸收系数接近于0。它的例子包括有金属氧化物、金属碳酸盐、金属氮化物或其混合物。在本发明中可使用的介电材料的特殊例子包括ZnS-SiO2(8∶2)、AlN和GeN。本发明的第一和第二介电层可通过使用一RF(射频)溅射方法被形成300至3000埃厚的第一介电层和50至500埃的第二介电层。
在本发明的记录层的形成中使用的是可易于经受响应于激光束辐射在晶相和非晶相之间的相位改变的材料，且其例子包括例如Ge-Sb-Te、In-Sb-Te、Ag-In-Sb-Te、Cr-Ge-Sb-Te、和N-Ge-Sb-Te合金的常规的calcogen复合物。这些材料可与其他粘合剂一起使用以改善记录层特性。该记录层可通过使用例如DC(直流)溅射的一常规的方法被形成100至1000埃厚度。
为形成一反射层，例如Al、Ag、Au、Cu的常规金属可被使用。为了改善记录和抗氧化特性，可将小量的其他金属，例如Cr、Ni、Ti、Si、Mg加至其以形成一合金，例如Al-Ti(Ti 1.5wt％)、Ai-Cr(Cr2at％)、Ag-Al和Ag-Mg。
在本发明的光盘中，在形成第一反射层中使用的材料是具有1.9至3.0的负电性但不与介电层起反应的一金属或其合金。第二反射材料可使用一金属或一合金，例如Cu、Ag或其合金而被形成，该合金具有比第一反射层更高的热导率并可包含从由Al、Au、Cu、Ag、W、Mo、Ni、Ge、Si、Fe、Cr、Co、Zr、Zn、Ti、Ta、Mg、Pd、V、Nb、Hf、Sn、Sc、Rh、Pt、Mn和它们的组合物组成的一群中选择的一金属成分作为次要成分。
例示的用于形成第一反射层的金属包括Al、Au、W、Mo、Ni、Ge、Si、Pd、Sn、Rh、Pt及其合金，该合金可包含Al、Au、Cu、Ag、W、Mo、Ni、Ge、Si、Fe、Cr、Co、Zr、Zn、Ti、Ta、Mg、Pd、V、Nb、Hf、Sn、Sc、Rh、Pt、Mn或其组合物作为一次要成分。
通常，要求该反射层能够快速地冷却一熔化的标记，该熔化的标记是在通过激光束加热到一高于记录材料的熔点的温度，以使在其上形成一非晶态记录标记时在记录层中生成的，且在同时，能够在一擦除循环期间通过将该标记保持在一预定的恒定的温度到一足以使其晶化的时间而晶化一非晶态记录标记。当在该反射层中使用一Al合金时，由于在该反射层积累过热负载，信号特性随着重复的记录/擦除循环倾向于劣化。为了克服这一问题，已建议使用Ag和Cu，但由于其过高的热导率且还由于其倾向于与第二介电层发生反应，由Ag或Cu制成的反射层呈现出差的擦除特性。
在本发明中，与第二介电层紧密接触的第一反射层起到在晶化循环期间将该记录层的温度保持在一期望的范围内的作用及扮演防止第二反射层和该介电层之间发生反应的角色。而且，被定位在第一反射层和保护层之间的第二反射层具有更高的热导率并减轻在第一反射层上积累一过热负载。
第一和第二反射层的厚度可根据其形成使用的材料、记录层的组分、记录速度和介电层的组分和厚度而被适当地确定。例如，当第一反射层由W、Si、或一Al合金制成，且第二反射层由Cu、Ag或一Ag合金形成时，第一反射层最好具有10埃或更大，更佳地100埃或更大的厚度，而第二反射层最好具有250埃或更大，更佳地450埃或更大的厚度。
为了获得适宜的信号调制特性，最好该盘被制备以使记录层的非晶相和晶相之间的反射率的差大于10％。而且，当该盘的陆和槽区两者在记录中被使用时，由于由记录的非晶态标记和擦除的晶态标记之间的折射率的差所生成的信号相差导致的干扰，信号幅度倾向于减小。为了防止这一问题，，期望使非晶相的反射率接近于0。或设计各层的厚度以使槽和陆之间的信号幅度差最小。
而且，为了降低制做成本，最好将各层的厚度保持在一可允许的低限。
一常规的UV-可愈合(curable)的树脂可在本发明的盘的保护层中被使用。
图5示出了本发明的相位改变光盘的重写过程。当一高功率激光束被辐射在记录层的一区域上时，该被辐射区熔化且该熔化区被快速冷却以形成一非晶态区，即一记录标记。该记录标记可通过用具有对应于记录功率的1/3至1/2的一功率的一激光束辐射该记录区来重晶化该记录区而被擦除。具有由多个连续短脉冲组成的一多脉冲构成的一激光束是较佳的。
在以下的例子中对本发明作进一步的描述和说明，但并不期望限制本发明的范围。
CD-RW
在例1至14和比较例1至14中制备的CD双速相位改变光盘的特性根据以下方法被评估。
(1)耐腐蚀性(加速的老化试验)
一样本盘被在25-85℃、50-95％的相对湿度下保持达100小时，且其记录和播放特性被评估(良好：O，差：X)。
(2)记录特性
盘的记录特性被用用于CD-RW的动态特性评估设备(APEX Co.，模块媒体测试仪(MMT))进行评估。使用具有图6中所示的多脉冲构成的一激光束。记录功率和擦除功率各自为12.5mw和6.25mw。光源的波长是780nm且物镜的NA为0.55。
初始的记录特性由一初始记录后的抖动值表示。当该抖动值超过20ns时，该记录信号特性被认为是差的。
由第10次重写之后的抖动值代表的重写记录特性当该抖动值超过20ns时被认为是差的(良好：O，差：X)。
重写循环性意指直至抖动值达到比第10次重写之后的抖动值大50％时可实现的重写循环数。
例1
根据一注入模制方法使用一模子制备具有500埃深的螺旋槽的一1.2mm厚聚碳酸酯盘基底。
使用一RF溅射法在这些槽上形成具有950埃的厚度的一ZnS-SiO2(8∶2)第一介电层。然后，在第一介电层上形成200埃厚的一Ag-In-Sb-Te合金薄层。然后，通过RF溅射在其上形成具有250埃厚度的一ZnS-SiO2(8∶2)第二介电层。
在第二介电层上形成具有50埃厚度的一Al-Ti(Al 98.5wt％，Ti1.5wt％)第一反射层，且然后，在第一反射层上形成具有500埃厚度的一Ag第二反射层。
在第二反射层上旋转-涂覆一UV-可愈合树脂(SD 17∶DIC)作为一保护层。
所得到的相位改变光盘通过使用高速初始化设备(POP-120，Hitachi Co.)以半导体激光束(波长830nm)辐射记录层而被初始化。
这样制备的盘的特性被示出在表I中。
例2至5
重复例1的程序，除了如表I所示，反射层的构成和/或厚度被改变外。
这样制备的盘的特性被示出在表I中。
比较例1至14
重复例1的程序，除了如表I所示，反射层的构成和/或厚度被改变外。
这样制备的盘的特性被示出在表I中。
表I
| 第一(或单个)反射层 | 第二反射层 | 耐腐蚀性 | 重写特性 | 初始抖动(ns | |||
| 材料 | 厚度(埃) | 材料 | 厚度(埃) | ||||
| 例1 | Al-Ti | 50 | Ag | 500 | O | O | 12 |
| 例2 | Al-Ti | 30 | Ag | 500 | O | O | 12 |
| 例3 | Al-Ti | 10 | Ag | 500 | O | O | 12 |
| 例4 | Al-Ti | 10 | Ag | 250 | O | O | 13 |
| 例5 | Al-Ti | 100 | Ag | 400 | O | O | 14 |
| 比较例1 | Ag | 1000 | - | - | O | O | 21 |
| 比较例2 | Ag | 750 | - | - | O | O | 19 |
| 比较例3 | Ag | 500 | - | - | X | O | 15 |
| 比较例4 | Ag | 300 | - | - | X | O | 18 |
| 比较例5 | Ag | 250 | - | - | X | O | 19 |
| 比较例6 | Ag | 200 | - | - | X | X | 34 |
| 比较例7 | Ag | 150 | - | - | X | - | - |
| 比较例8 | Al-Ti | 1500 | - | - | O | O | 19 |
| 比较例9 | Al-Ti | 1000 | - | - | O | O | 19 |
| 比较例10 | Al-Ti | 750 | - | - | O | X | 23 |
| 比较例11 | Al-Ti | 500 | - | - | O | - | - |
| 比较例12 | Al-Ti | 300 | - | - | O | - | - |
| 比较例13 | Al-Ti | 10 | Ag | 200 | O | X | 21 |
| 比较例14 | Cu | 10 | Ag | 200 | O | X | 23 |
如表I中所见，在例1-5中制备的本发明的相位改变光盘呈现良好的重写记录特性和耐腐蚀性以及低于15ns的初始记录抖动值。
在比较例1和2中制备的包括一具有750埃或更大厚度的Ag单反射层的盘呈现良好的耐腐蚀性但使用这样一厚银层在经济上是不可行的。当该Ag单反射层的厚度被减少到低于500埃时，耐腐蚀性变差。在该Ag单反射层的厚度小于200埃(比较例6和7)的情况下，盘除了腐蚀问题以外，还呈现差的记录特性。
图7示出了在一加速老化试验中获得的比较例3的盘的一Ag反射层的腐蚀表面的SEM相片。
关于包含一单Al-Ti反射层的盘，当该Al-Ti反射层的厚度为1000埃或更大(比较例8和9)时，耐腐蚀性和重写特性是令人满意的，但初始抖动值高于本发明盘。而且，用于制造这样一厚Al-Ti层的过程具有生产率低的问题。
当该Al-Ti反射层的厚度被减小到750、500和300埃(比较例10至12)时，记录信号特性劣化。
图8示出了在采用一单750埃Al-Ti反射层的比较例10中制备的相位改变盘的播放的信号的波型。由于盘上有缺陷的非晶态标记的存在，图8中所示的波型不同于呈现一理想的波型的图9中的波型。
图10中示出的是采用各种不同厚度的一单个Al-Ti反射层的比较例8至12的盘的模拟的加热-冷却特性。在该模拟中使用的材料的物理特性和光学常数被示出在表II中。
表II
| 材料 | 折射率(780nm) | 热导率(J/cm/sec/℃) | 比热 | |
| 介电层 | ZnS-SiO2 | 2.05+0.001I | 0.006 | 2.055 |
| 记录层 | Ag-In-Sb-Te | 4.13+4.68I | 0.0055 | 1.292 |
| 反射层 | Al-Ti | 2.54+7.82i | 1.1 | 2.464 |
如图10中所见，当Al合金反射层的厚度减小时，冷却率降低。
通常通过将记录层的温度升至其熔点之上并快速地将该熔化层冷却至该熔点之下而生成一非晶态记录标记，且如果该冷却率不是足够地高，该熔化层倾向于在被淬灭为一非晶相之前被晶化。具有小于750埃厚度的一单Al合金反射层的盘存在有冷却率不足的问题，且因此具有差的记录特性。
这样，使用常规的Al-Ti合金单反射层要求它具有1000埃或更大的厚度，而小于500埃厚度的一Ag单反射层又有腐蚀的问题。相反，具有一相对薄的层的本发明的薄盘呈现改善的特性。
例6至14
重复例1的程序，除了如表III所示，反射层的构成和厚度被改变外。
这样制备的盘的特性被示出在表III中。
表III
| 第一(或单)反射层 | 第二反射层 | 耐腐蚀性 | 重写特性 | 初始抖动(ns) | 重写循环性 | |||
| 材料 | 厚度(埃) | 材料 | 厚度(埃) | |||||
| 例6 | Al-Ti | 500 | Ag | 500 | O | O | 19 | ＞2000 |
| 例7 | Al-Ti | 400 | Ag | 500 | O | O | 18 | ＞2000 |
| 例8 | Al-Ti | 300 | Ag | 500 | O | O | 19 | ＞2000 |
| 例9 | Al-Ti | 200 | Ag | 500 | O | 0 | 18 | ＞2000 |
| 例10 | Al-Ti | 100 | Ag | 500 | O | O | 18 | ＞1800 |
| 例11 | Al-Ti | 100 | Ag | 450 | O | O | 14 | ＞900 |
| 例12 | W | 100 | Ag | 500 | O | O | 18 | ＞2000 |
| 例13 | W | 500 | Ag | 500 | O | O | 18 | ＞2000 |
| 例14 | Si | 100 | Ag | 500 | O | O | 18 | ＞1100 |
如从表III中所见，在例6-14中制备的本发明的相位改变光盘呈现良好的记录信号特性、耐腐蚀性和优良的重写循环性。
图11记录了对在比较例3中制备的采用一Ag单反射层(■)的相位改变盘和在例10中制备的具有Al-Ti第一反射层和一Ag第二反射层(●)的盘的加速的老化试验结果。本发明的盘呈现一恒定的抖动值。而具有一单Ag层的盘的抖动值在10小时后突然增大。
DVD-RAM
在例15至20和比较例15至18中制备的DVD-RAM的特性根据以下方法被评估。
一盘被装载在用于DVD-RAM的一动态特性评估设备(NakamichiCo)上且其特性在6.0ms/s的旋转速度下被评估。根据DVD-RAM标准1.0(DVD论坛)使用一激光束。该光源的波长是680nm且物镜的NA的是0.60。
在第十次重写后的重写抖动被定义为该抖动值并当该抖动值超过4ns时认为是差的。
该重写循环性由直至抖动值达到比该重写抖动高50％时可取得的重写循环数表示。
Pp(mW)代表记录功率。当重写抖动值小于4.0ns且重写循环性超过100,000次循环时，该盘的整体特性被分类为良好(良好：O，差：X)。
例15
根据一注入模制方法使用一模子制备具有70nm深的螺旋槽的一0.6mm厚聚碳酸酯盘基底。两相邻槽之间的距离是1.48μm且一槽中心与一连接陆中心之间的距离是0.74μm。沿着这些槽的中心线，首部坑被格式化以检测各扇区的地址。而且，在各槽中形成一弯曲以使相同频数的摆动信号可被检测到。
使用一RF溅射法在这些槽上形成具有950埃的厚度的一ZnS-SiO2(8∶2)第一介电层。然后，在第一介电层上形成200埃厚的一Ge-Sb-Te合金薄层。然后，通过RF溅射在其上形成具有140埃厚度的一ZnS-SiO2(8∶2)第二介电层。
通过溅射在第二介电层上形成具有500埃厚度的一Al-Cr(Al98wt％，Cr 2wt％)第一反射层，最后，通过使用DC溅射法在第一反射层上形成具有400埃厚度的一Cu第二反射层。在第二反射层上旋转-涂覆一UV-可愈合树脂(SD 17∶DIC)作为一保护层。
这样制备的盘的特性被示出在表IV中。
例16至19
重复例15的程序，除了如表IV所示，反射层的构成和厚度被改变外。
这样制备的盘的特性被示出在表IV中。
比较例15至21
重复例15的程序，除了如表IV所示，反射层的构成和厚度被改变外。
这样制备的盘的特性被示出在表IV中。
表IV
注意：A＝整体特性
| 第一(或单)反射层 | 第二反射层 | 重写抖动(ns) | 重写循环性 | Pp(mW) | A | |||
| 材料 | 厚度(埃) | 材料 | 厚度(埃) | |||||
| 例15 | Al-Cr | 500 | Cu | 400 | 3.7 | 120000 | 12.0 | O |
| 例16 | Al-Cr | 500 | Cu | 500 | 3.8 | 120000 | 12.6 | O |
| 例17 | Al-Cr | 500 | Cu | 600 | 3.9 | 130000 | 12.6 | O |
| 例18 | Al-Cr | 1000 | Cu | 500 | 3.7 | 100000 | 13.1 | O |
| 例19 | Al-Cr | 500 | Cu | 700 | 4.0 | 140000 | 12.6 | O |
| 比较例15 | Al-Cr | 500 | - | - | 3.8 | 2000 | 10.8 | X |
| 比较例16 | Al-Cr | 1000 | - | - | 3.7 | 2000 | 12.0 | X |
| 比较例17 | Al-Cr | 1500 | - | - | 3.6 | 50000 | 12.2 | X |
| 比较例18 | Al-Cr | 2000 | - | - | 3.6 | 70000 | 13.0 | X |
| 比较例19 | Al-Cr | 500 | Cu | 800 | 4.7 | - | 12.6 | X |
| 比较例20 | Al-Cr | 500 | Cu | 1000 | 4.6 | - | 12.8 | X |
| 比较例21 | Al-Cr | 1500 | Cu | 500 | 3.8 | 50000 | 12.2 | X |
如表IV中所见，在例15至19中制备的本发明的相位改变光盘呈现良好的记录信号特性和耐腐蚀性以及低初始记录抖动值。
图12示出了比较例15至18的盘的重写抖动值和循环性随Al-Cr单反射层的厚度的变化。即使Al-Cr层的厚度高达2000埃，整体循环性仅达到70000。
图13示出了比较例15至18的盘的记录功率随Al-Cr单反射层的厚度的变化。如图13中所示，当反射层的厚度增大时，记录功率必须被升高到一不期望的水平。而且，当在制造盘中使用一过分厚的反射层时，由于增加的材料成本和低生产率，该过程变为不经济。而且，当Al-Cr和Cu反射层的组合厚度大于一规定限度1300埃，如在比较例19至21中时，可获得具有高抖动值和差的重写循环性的盘。
图14示出了重写抖动值和循环性随Cu第二反射层的厚度的改变。例20
重复例15的程序，除了记录层的构成是GeSb2Te4外；具有500埃厚度的一Al-Cr合金(Cr 2.0 at％)层和具有100埃厚度的一Cu层被各自地使用作为第一和第二反射层；且在基底上不形成首部坑和摆动(wobble)。比较例22
重复例20的程序，除了具有500埃厚度的一Al-Cr合金层被用作为一单反射层外。比较例23
重复例20的程序，除了Cu第二反射层的厚度为200埃外。
在例20和比较例22和23中制备的盘在例12的条件下(除了速度被调整至8.2m/s外)被进行记录。图15示出了在例20(■)和比较例22(●)及23(▲)中制备的相位改变光盘的作为重写循环数的函数的重写抖动值(3Tw)的改变。
如从上述结果中所见，当在被检查的条件下，具有100埃厚度(例20)的薄Cu层呈现出比比较例23中采用的200埃厚Cu层更佳的特性。
因此，本发明的相位改变光盘可被有利地用于CD-ROW，DVD-RAM及诸如此类。
尽管已对本发明的实施例进行了描述和示出。显然在不超出由后附权利要求限定的本发明的精神的前提下，可作出各种变化和改型。
Claims (10)
1、一种相位改变光盘，具有一第一介电层、一记录层、一第二介电层、一反射层和一保护层，其特征在于该反射层包括由具有1.9至3.0的负电性的一金属或其合金制成的一第一反射层和一由Cu、Ag或其合金制成的一第二反射层，该第一反射层与第二介电层紧密接触，且该第二反射层与第一反射层和该保护层紧密接触。
2、根据权利要求1的相位改变光盘，其中第一反射层的金属或合金是从由Al、Au、W、Mo、Ni、Ge、Si、Pd、Sn、Rh、Pt及其合金组成的一群中被选择的。
3、根据权利要求2的相位改变光盘，其中该合金包含从由Al、Au、Cu、Ag、W、Mo、Ni、Ge、Si、Fe、Cr、Co、Zr、Zn、Ti、Ta、Mg、Pd、V、Nb、Hf、Sn、Sc、Rh、Pt、Mn和它们的组合物组成的一群中选择的一金属成分作为次要成分。
4、根据权利要求1的相位改变光盘，其中构成第二反射层的该合金包含从由Al、Au、Cu、Ag、W、Mo、Ni、Ge、Si、Fe、Cr、Co、Zr、Zn、Ti、Ta、Mg、Pd、V、Nb、Hf、Sn、Sc、Rh、Pt、Mn和它们的组合物组成的群中选择的一金属成分作为次要成分。
5、根据权利要求1的相位改变光盘，其中该记录层是一Ag-In-Sb-Te合金，第一反射层是具有10埃或更大厚度的W，Si，或一Al合金且第二反射层是具有250埃或更大厚度的Ag或Ag合金。
6、根据权利要求5的相位改变光盘，其中第一反射层是具有100埃或更大厚度的Al合金且第二反射层是具有450埃或更大厚度的Ag或Ag合金。
7、根据权利要求1的相位改变光盘，其中该记录层是一Ge-Sb-Te合金，第一反射层是Al或Al合金且第二反射层是Cu或Ag。
8、根据权利要求7的相位改变光盘，其中第一反射层和第二反射层的组合厚度是2000埃或更小。
9、根据权利要求8的相位改变光盘，其中第一反射层的厚度是1300埃或更小且第二反射层的厚度是10埃或更大。
10、根据权利要求9的相位改变光盘，其中第二反射层的厚度是800埃或更小。
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| KR19980041082 | 1998-09-30 | ||
| KR41082/1998 | 1998-09-30 | ||
| KR49920/1998 | 1998-11-20 | ||
| KR19980049920 | 1998-11-20 | ||
| KR19990020151 | 1999-06-02 | ||
| KR20151/1999 | 1999-06-02 |
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| US (1) | US6355326B1 (zh) |
| JP (1) | JP2000113514A (zh) |
| CN (1) | CN1249506A (zh) |
| DE (1) | DE19948346A1 (zh) |
| FR (1) | FR2784491A1 (zh) |
| GB (1) | GB2342217B (zh) |
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| CN101371304B (zh) * | 2006-01-18 | 2011-09-14 | 三菱化学媒体株式会社 | 光记录介质 |
| CN101425301B (zh) * | 2007-10-30 | 2011-10-19 | 财团法人工业技术研究院 | 光记录载体、信号产生装置、信息的记录方法与读取装置 |
| US8059521B2 (en) | 2007-01-11 | 2011-11-15 | Industrial Technology Research Institute | Optical recording carrier, signal generating apparatus, information recording method, and information reading apparatus |
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| US5075145A (en) * | 1989-04-07 | 1991-12-24 | Fuji Photo Film Co., Ltd. | Optical recording medium |
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- 1999-09-28 US US09/406,985 patent/US6355326B1/en not_active Expired - Fee Related
- 1999-09-29 FR FR9912160A patent/FR2784491A1/fr not_active Withdrawn
- 1999-09-29 CN CN99119752A patent/CN1249506A/zh active Pending
- 1999-09-29 DE DE1999148346 patent/DE19948346A1/de not_active Withdrawn
- 1999-09-29 GB GB9922922A patent/GB2342217B/en not_active Expired - Fee Related
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Cited By (6)
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| US7008681B2 (en) | 2002-03-15 | 2006-03-07 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium and manufacturing method and recording/reproducing method for the same |
| CN1306508C (zh) * | 2002-03-15 | 2007-03-21 | 松下电器产业株式会社 | 光学信息记录媒体及其制造方法和记录再现方法 |
| CN100449623C (zh) * | 2003-10-31 | 2009-01-07 | 巨擘科技股份有限公司 | 光盘片基板、光盘片及其制造方法 |
| CN101371304B (zh) * | 2006-01-18 | 2011-09-14 | 三菱化学媒体株式会社 | 光记录介质 |
| US8059521B2 (en) | 2007-01-11 | 2011-11-15 | Industrial Technology Research Institute | Optical recording carrier, signal generating apparatus, information recording method, and information reading apparatus |
| CN101425301B (zh) * | 2007-10-30 | 2011-10-19 | 财团法人工业技术研究院 | 光记录载体、信号产生装置、信息的记录方法与读取装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE19948346A1 (de) | 2000-07-06 |
| US6355326B1 (en) | 2002-03-12 |
| GB2342217A (en) | 2000-04-05 |
| GB2342217B (en) | 2002-12-31 |
| FR2784491A1 (fr) | 2000-04-14 |
| JP2000113514A (ja) | 2000-04-21 |
| GB9922922D0 (en) | 1999-12-01 |
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