CN1240537A - Patterns of electrically conducting polymers and their application as electrodes or electrical contacts - Google Patents
Patterns of electrically conducting polymers and their application as electrodes or electrical contacts Download PDFInfo
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- CN1240537A CN1240537A CN97180571A CN97180571A CN1240537A CN 1240537 A CN1240537 A CN 1240537A CN 97180571 A CN97180571 A CN 97180571A CN 97180571 A CN97180571 A CN 97180571A CN 1240537 A CN1240537 A CN 1240537A
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
Abstract
Electronic devices having patterned electrically conductive polymers providing electrical connection thereto and methods of fabrication thereof are described. Liquid crystal display cells are described having at least one of the electrodes providing a bias across the liquid crystal material formed from a patterned electrically conductive polymer. Thin film transistors having patterned electrically conductive polymers as source drain and gate electrodes are described. Light emitting diodes having anode and coated regions formed from patterned electrically conductive polymers are described. Methods of patterning using a resist mask; patterning using a patterned metal layer, patterning the metal layer using a resist; and patterning the electrically conductive polymer directly to form electrodes and anode and cathode regions are described.
Description
The application require on March 17th, 1997 application, exercise question is the provisional application No.60/040 of " Method ofPatterning Electrically Conductive Polymer Films To FormElectrodes And Interconnection Conductors On A Surface Using AResist To Patern A Metal Layer To Patern An ElectricallyConductive Polymer Layer ", 129 priority.
The application require people such as M.Angelopoulos in application on November 12nd, 1996, exercise question is the provisional application No.60/030 of " SOLUTION APPLIED; IMAGEABLE; TRANSPARENTPOLYMERS AS CONDUCTING ELECTRODES ", 501 priority.
The application require people such as M.Angelopoulos in application on March 7th, 1997, exercise question is the provisional application No.60/040 of " PATTERNS OF ELECTRICALLY CONDUCTINGPOLYMERS AND THEIR APPLICATION AS ELECTRODES ANDELECTRICAL CONTACTS ", 335 priority.
The application require people such as M.Angelopoulos in application on March 7th, 1997, exercise question is the provisional application No.60/040 of " PATTERNS OF ELECTRICALLY CONDUCTINGPOLYMERS AND THEIR APPLICATION AS ELECTRODES INFIELD EFFECT TRANSISTORS ", 628 priority.
The application require people such as M.Angelopoulos in application on March 7th, 1997, exercise question is the provisional application No.60/040 of " METHODS OF PATTERNING ELECTRICALLYCONDUCTIVE POLYMER FILMS TO FORM ELECTRODES ANDINTERCONNECTION CONDUCTORS ON A SURFACE ", 159 priority.
The application require on March 7th, 1997 application, exercise question is the provisional application No.60/040 of " METHOD OfPatterning Electrically Conductive Polymer Films To FormElectrodes And Interconnection Conductors On A Surface Using AResist Mask ", 130 priority.
The application require people such as M.Angelopoulos in application on March 7th, 1997, exercise question is the provisional application No.60/040 of " STRUCTURES HAVING PATTERNED ELECTRICALLYCONDUCTIVE POLYMER FILMS AND METHODS OFFABRICATION THEREOF ", 132 priority.The application require people such as M.Angelopoulos in application on March 7th, 1997, exercise question is the provisional application No.60/040 of " LIGHT EMITTING DIODES HAVING ELECTRICALLYCONDUCTIVE POLYMER ELECTRODES ", 131 priority.
Technical field of the present invention
Target of the present invention is patterned conductive polymer and preparation method thereof.More specifically, target of the present invention is to have with conducting polymer as electrode contact and active area and the electronic device that graphically electrically contacts that formed by conducting polymer, particularly this base polymer is as the electrode of electrical optical converter or the application that electrically contacts, and this quasi-converter comprises LCD, electrooptic modulator, diode, light-emitting diode, transistor and other or the like.
Background technology
Present electrical optical converter and other devices electrically contact or electrode generally is a metal.Metal is by evaporation or sputter procedure deposit, and this needs expensive instrument and equipment, and generally speaking process is pretty troublesome.
Conducting polymer is a newer electron-like material, is the reserve of it being used as electrode material herein.This base polymer combines the electric conductivity of metal and the processing advantage of polymer.
The example of our described conducting polymer comprises replacement and does not replace electrically conductive polyaniline herein, polyparaphenylene, poly (phenylenevinylene), polythiophene, poly-furans, polypyrrole, poly-selenophen, polyisothianaphthene, polyphenylene sulfide, polyacetylene, polypyridine ethenylidene, the mixture of the copolymer of polyazine and their combination and they and other polymer and monomer whose.
In order to make the electrode of these polymer as device, they preferably can have suitable conductivity and be easy to graphical.In addition, these polymer preferably not outgas in order to avoid cause and use their to be polluted as the device that electrically contacts.In addition, conducting polymer preferably can be realized graphical by photoetching.Graphically preferably neither can cause reducing of conducting polymer, also can not cause any deterioration of conducting polymer performance.
Therefore, preferably develop these polymer are carried out patterned method, can be applicable to any conducting polymer system and can not have a negative impact making it, so just can be used as electrically contacting of device through patterned conducting polymer to conducting polymer.The performance of equally also wishing conducting polymer is controlled, so that make device outgas or pollution can not occur.
Purpose of the present invention
The purpose of this invention is to provide the electronic device that the performance that adopts conducting polymer is improved.
The purpose of this invention is to provide the figure of conducting polymer and the method for making figure.Particularly, at first make resist graphical, afterwards with the resist figure transfer to conducting polymer.In case figure transfer to conducting polymer, is just removed resist.
The objective of the invention is to utilize the resist that puts on the conducting polymer that the figure of conducting polymer is provided.Particularly, at first metal is carried out graphically afterwards metallic pattern being transferred on the conducting polymer, then just with metal removal.
Another object of the present invention is to utilize the metal that puts on the conducting polymer that the figure of conducting polymer is provided.
Another object of the present invention provides the figure of the conducting polymer with high conductivity.
Another object of the present invention provides the figure of the conducting polymer with high light transmittance.
Another object of the present invention provides the figure of the conducting polymer with good thermal stability.
Another object of the present invention provides the conducting polymer with high light transmittance and high conductivity.
Another object of the present invention provides can be used as and electrically contacts or the conducting polymer of electrode and the figure of conducting polymer.
Another object of the present invention provides and can be used as electrically contacting or the conducting polymer of electrode and the figure of conducting polymer in electrical optical converter and the device.
Another object of the present invention provides the conducting polymer that can be used as the electrode in the LCD and the figure of conducting polymer.
Another object of the present invention provides the LCD that is made of conductive polymer electrodes.
Another object of the present invention provides the LCD that is made of conductive polymer electrodes and metal electrode.
Another object of the present invention provides the LCD that is made of conductive polymer electrodes and indium-tin oxide electrode.
Another object of the present invention provides active matrix thin film transistor (TFT) LCD that the electrode by one or more conducting polymers constitutes.
Another object of the present invention provides the LCD that the electrode by the one or more conducting polymers that show the good charge retention constitutes.
Another object of the present invention provides the LCD that the electrode by the one or more conducting polymers that show good light permeability/voltage characteristic constitutes.
Another object of the present invention provides the LCD that the electrode by the one or more conducting polymers that show good image retention performance constitutes.
Another object of the present invention provides the conducting polymer that can be used as the one or more electrodes in the light-emitting diode and the figure of conducting polymer.
Another object of the present invention provides the organic or inorganic light-emitting diode that the electrode by one or more conducting polymers constitutes.
Another object of the present invention provides the organic or inorganic light-emitting diode that the electrode by one or more patterned conducting polymers constitutes.
Another object of the present invention provides has the injection region, hole that formed by conducting polymer and/or the light-emitting diode of electron injection region.
Another object of the present invention provides can be used as and transistorizedly electrically contacts, as drain electrode, source electrode and gate electrode in field-effect transistor (FET) device and the conducting polymer that contacts in the bipolar transistor and the figure of conducting polymer.
Another object of the present invention provides the figure that shows satisfactory electrical conductivity, good thermal stability, no outgas and have the conducting polymer of high light transmittance in some occasion.
Another object of the present invention provides by resist being applied to the figure of the conducting polymer that conducting polymer obtains, and wherein resist is through overexposure and development and form figure in the resist.Make the resist figure transfer to conducting polymer by etching, then resist is removed.
Another wide aspect of the present invention provides by metal being applied to the figure of the conducting polymer that the conducting polymer surface obtains.Metal realizes that by using resist graphically resist wherein is through overexposure and development.The resist figure transfer makes figure transfer to conducting polymer by etching technique to metal then.
Another wide aspect of the present invention provides by graphical metal level is applied to conducting polymer, makes figure enter conducting polymer and by removing the figure that metal obtains conducting polymer by etching.
Of the present invention one more specifically the aspect provide the thin film transistor switch that LCD is used, one of them and a plurality of source electrodes, drain and gate electrode are to be made of the conducting polymer that shows satisfactory electrical conductivity and good thermal stability.
Another object of the present invention provides the light-emitting diode that is made of conductive polymer electrodes and metal electrode.
Another object of the present invention provides the conducting polymer that can be used as the one or more electrodes in the light-emitting diode and the figure of conducting polymer.
Another object of the present invention provides the organic or inorganic light-emitting diode that the electrode by one or more conducting polymers constitutes.
Another object of the present invention provides the organic or inorganic light-emitting diode that the electrode by one or more patterned conducting polymers constitutes.
Another object of the present invention provides by as hole injecting electrode or the light-emitting diode that constitutes as the conducting polymer of electron injecting layer.
Brief introduction of the present invention
Therefore, a wide aspect of the present invention provides conducting polymer and patterned conductive polymer and its patterned method is provided.
A wide aspect of the present invention provides to have and can be the electronic device that device provides the patterned conductive polymer of electrical connection.
A wide aspect of the present invention is that the patterned conductive polymer is configured on the electronic device so that electrically contact for device provides.
Another wide aspect of the present invention provides the figure that shows satisfactory electrical conductivity, good thermal stability, no outgas and have the conducting polymer of high light transmittance in some occasion.
Another wide aspect of the present invention provides by resist being applied to the figure of the conducting polymer that conducting polymer obtains, wherein resist is through overexposure and development, and make figure transfer to conducting polymer by etching technique, then resist is removed.
Another wide aspect of the present invention provides by metal being applied to the figure of the surperficial conducting polymer that obtains of conducting polymer.Metal is graphical by using resist, and resist wherein is through overexposure and development.The resist figure transfer makes figure transfer to conducting polymer by etching technique, then with metal removal to metal then.
Another wide aspect of the present invention provides by graphical metal level is applied to conducting polymer, makes figure enter conducting polymer by etching then and by removing the figure that metal obtains conducting polymer.
Another wide aspect of the present invention provides the conducting polymer that electrically contacts that can be used as electrical optical converter and device and the figure of conducting polymer.
Another wide aspect of the present invention provides electrical optical converter and the device with one or more conductive polymer electrodes.
Of the present invention one more specifically the aspect provide LCD with one or more conductive polymer electrodes.LCD has an indium-tin oxide electrode and a conductive polymer electrodes in one embodiment.
Of the present invention one more specifically the aspect provide to have and show high electric charge retention, the LCD of one or more conductive polymer electrodes of good light permeability/voltage characteristic and good image retention performance.
Of the present invention one more specifically the aspect be to have the electronic device of electroactive part that has the surface; This surface has a dielectric layer, and a window is arranged on this dielectric layer, and the periphery of window exposes electroactive part; Configuration one conductive polymer coating on dielectric layer; This conductive polymer coating electrically contacts by periphery and the electroactive part that window and covering should be configured on the dielectric layer.
Of the present invention another more specifically the aspect be following liquid crystal display device structure, its formation comprises: the 1st substrate; The 2nd substrate; Be configured in the liquid crystal layer between the 1st substrate and the 2nd substrate; At least on one of the 1st substrate and the 2nd substrate, dispose conducting polymer the instrument that current potential is put on the liquid crystal layer two ends is provided.
Of the present invention another more specifically the aspect be field-effect transistor with source electrode, drain and gate electrode, at least one is the patterned conductive polymer in these electrodes.
Of the present invention another more specifically the aspect be following structure, its formation comprises: substrate; Be configured in the patterned conductive polymer grid on the substrate; This grid is a conducting polymer; Be configured in the insulating barrier on the graphical grid; Be configured in the graphical source electrode on the insulating barrier; Be configured in the graphical drain electrode on the insulating barrier; Graphical source electrode and graphical drain electrode are formed by conducting polymer; And be configured in semi-conducting material among the grid between graphical source electrode and graphical drain electrode and graphical source electrode and the described graphical source electrode.
Of the present invention another more specifically the aspect be light-emitting diode, its formation has: substrate, anode construction, electroluminescent district, and cathode construction, wherein cathode construction or anode construction are conducting polymers.
Of the present invention another more specifically the aspect be Organic Light Emitting Diode, its formation has: substrate, anode, organic field luminescence layer and negative electrode, the male or female in this structure is a conducting polymer.
Of the present invention another more specifically the aspect be a kind of method, its formation comprises: the substrate with conducting polymer materials layer is provided; On the conducting polymer materials layer, dispose resist layer; Make resist to the energy graph exposure; The radiating pattern that forms figure in resist is developed, and its formation comprises the covering and the uncovering area of described conducting polymer; Remove conducting polymer from uncovering area, and remove the figure that resist stays described conducting polymer.
Of the present invention another more specifically the aspect be a kind of method, its formation comprises: the substrate with conducting polymer materials layer is provided; By on conductive polymer coating, forming the metal mask configuration metal layer image of graphical metal level, form by the conductive polymer regions of metallic pattern covering and the uncovering area of conducting polymer; Uncovering area is etched with the conductive polymer regions of removing exposure; And remove metal and obtain patterns of electrically conducting polymers.
Of the present invention another more specifically the aspect be a kind of method, its formation comprises: the substrate with conductive polymer coating is provided; On conductive polymer coating, dispose metal level; On metal level, dispose resist; Resist is exposed to radiating pattern; The radiating pattern that forms figure in resist is developed, obtain the area of coverage and the uncovering area of metal film; In described uncovering area, remove metal level, obtain the area of coverage and the uncovering area of described conducting polymer; Remove the uncovering area of described conducting polymer; Remove resist; And remove the remainder of metal level and obtain the figure of conducting polymer.
Of the present invention another more specifically the aspect be a kind of method, its formation comprises: the substrate with conducting polymer materials layer is provided; Wherein conducting polymer contains the energy-sensitive component; Make conducting polymer form exposure and unexposed area to the energy graph exposure; Remove the conducting polymer in one of exposure and unexposed area so that on substrate, form the figure of described conducting polymer.
Brief description
Further purpose of the present invention, characteristics and advantage are by will be apparent from below in conjunction with the accompanying drawing description of this invention, in the accompanying drawing:
Fig. 1 is the perspective illustration according to the embodiment of the structure that comprises the patterned conductive polymer of the present invention.
Fig. 2 is the diagrammatic side view according to another embodiment of the structure that comprises the patterned conductive polymer of the present invention.
Fig. 3 is the schematic diagram of typical liquid crystal structure.
Fig. 4 is the schematic diagram of the working condition of twisted nematic liquid crystal box; In (a), apply voltage, the light transmission maximum of liquid crystal cell, and in (b), be applied with voltage, the light transmission minimum of liquid crystal cell.
Fig. 5 is the schematic diagram of typical active matrix thin film transistor display.
Fig. 6 illustrates the top view of the unit box of TFT/LCD (thin-film transistor/LCD) display.
Fig. 7 illustrates along the schematic diagram of the cutaway view of AA ' line of Fig. 6.
Fig. 8 illustrates another cutaway view along AA ' line of Fig. 6.
Fig. 9 illustrates the part of the LCD of having assembled.
Figure 10 illustrates the schematic sectional view of a film transistor device, source electrode wherein, and one or more in the drain and gate electrode are made of conducting polymer.Source electrode and drain electrode are the top that directly is disposed at gate insulator, afterwards and with semiconductor they are covered.
Figure 11 illustrates the schematic sectional view of a film transistor device, source electrode wherein, and one or more in the drain and gate electrode are made of conducting polymer.The substrate conduction also is used as gate electrode simultaneously.Source electrode and drain electrode directly are configured in the top of insulator, afterwards and with semiconductor they are covered.
Figure 12 illustrates the schematic sectional view of a film transistor device, source electrode wherein, and one or more in the drain and gate electrode are made of conducting polymer.Source electrode and drain electrode directly are configured in semi-conductive top.
Figure 13 illustrates the schematic sectional view of a film transistor device, source electrode wherein, and one or more in the drain and gate electrode are made of conducting polymer.The substrate conduction also is used as gate electrode simultaneously.Source electrode and drain electrode directly are configured on the semiconductor.
Figure 14 illustrates source electrode and the electric current between the drain electrode and the relation curve of voltage gate electrode of the film transistor device that flows through the structure shown in Figure 11 schematic diagram.The long L of the raceway groove of this device is 100 microns, and raceway groove is wide to be 1500 microns.
Figure 15 illustrates the top view based on the representative configuration of the active matrix liquid crystal display of film transistor device.Source electrode wherein, one or more in the drain and gate electrode are made of polymer.
Figure 16 illustrates having two different film transistor device configurations, Figure 16 (a) and Figure 16 (b), film transistor device be the cutaway view of a pixel of the active matrix liquid crystal display on basis.Source electrode wherein, one or more in the drain and gate electrode are made of conducting polymer.
Figure 17 illustrates the via contact hole by passivation layer or insulating barrier.The bottom is a conducting polymer.The upper strata can be same material or different electric conducting materials, as metal, or tin indium oxide.
Figure 18 illustrates OLED (Organic Light Emitting Diode) structure of prior art, is produced on the glass substrate, and the negative electrode on top is opaque, and light can only send from glass side.
Figure 19 summary illustrates the light emitting diode construction with transparent (or opaque) negative electrode of the present invention.
Figure 20 schematically illustrates the light emitting diode matrix that is used for display image, and Figure 20 A is the passive matrix that a light-emitting diode is arranged at the intersection point place of each row and column, and Figure 20 B is for there being the active matrix of a current regulating circuit at the intersection point place of each row and column.
The graphical process of conducting polymer when Figure 21 illustrates the surface use resist of conducting polymer.The resist exposure is also developed; Image transfer is to conducting polymer; Remove resist.
The graphical process of conducting polymer when Figure 22 illustrates and by metal mask the surface of conducting polymer applied graphical metal level.Image transfer is removed metal afterwards to conducting polymer.
Figure 23 is illustrated in the graphical process that applies conducting polymer when covering metal level on the conducting polymer.Utilize resist to make metal patternization; Image is at first transferred to metal, arrives conducting polymer by etch transfer then; Remove remaining resist and metal.
Figure 24 illustrates the graphical process when making conducting polymer directly to radiant exposure; The zone that polymer is developed and to be easy to dissolve with removal afterwards.
Figure 25 and 26 illustrates the electrically conductive polyaniline lead about 10 μ m, and its formation is to have adopted resist on the conducting polymer surface.
Electrically conductive polyaniline lead shown in Figure 27 and 28 is to utilize by metal mask to be deposited on the lip-deep metal making of conducting polymer.
Figure 29, the electrically conductive polyaniline lead shown in 30 and 31 utilize by resist to form image and be deposited on the lip-deep covering metal making of conducting polymer.
Figure 32 illustrates the transmitted spectrum of the polyaniline film of 500 dusts.
Figure 33 illustrates the light transmission of the LCD that has two polyaniline electrodes and the characteristic curve of voltage relationship.
Figure 34 illustrates the brightness (light transmission) of the LCD that has two indium-tin oxide electrodes and the characteristic curve of voltage relationship.
Figure 35 illustrates the voltage and the time curve of the LCD that has polyaniline electrode.Electric charge reservation degree surpasses 95%.
Figure 41 and 42 is the schematic diagram at the junction surface between non-polymer electric conductor and the conducting polymer body.
Figure 43 is the schematic diagram that has according to the bipolar transistor of electrode of the present invention.
The present invention describes in detail
Target of the present invention is to adopt the device of conducting polymer, described conducting polymer comprises and replaces and substituted polyaniline not polyparaphenylene, poly (phenylenevinylene), polythiophene, polypyrrole, poly-furans, poly-selenophen, polyisothianaphthene, polyphenylene sulfide, polyacetylene, the mixture of the copolymer of polypyridine ethenylidene and their combination and they and other polymer and monomer whose.Found that these polymer can graphically form the conductive pattern that can be used as electrode or electrically contact by the photoetching realization in various electrical optical converters and device.Electrical optical converter and device that the present invention also has a target to be made up of one or more conductive polymer electrodes.
Fig. 1 is the perspective illustration with substrate 200 of deposit patterned conductive polymer 202 thereon.Interface 106 at least a portion between 204 form electrically contacting the surface 204 of substrate 200 to conducting polymer 202 along conducting polymer 202 and surface.Figure 102 can be electrically connected a large amount of electronic devices that are formed on the substrate 100.
Fig. 2 is for having the diagrammatic side view of the substrate 208 of dielectric layer 210 on its surface 212.Have through hole 214 in the dielectric layer 210, and be configured in and be used for filling vias 114 on the dielectric layer 110 so that the patterned conductive polymer 216 on surface 118 of contact substrate 108.Some can use the example of useful device of the present invention to be LCD (LCD), transistor (bipolar transistor and field-effect transistor), light-emitting diode or the like.
Liquid crystal display device
Electrical optical converter based on liquid crystal is the production flat-panel screens now, especially for the flat-panel screens of portable electric appts, modern technologies.Be expected at industry this technology when large area display advances and continue dominate in future.
Typical liquid crystal (twisted-nematic phase) box is shown in Fig. 3.In this device, nematic liquid crystal places at a distance of between the two sheet glass sheets of average out to 5-20 μ m.At the surface deposition transparency electrode of sheet glass, tin indium oxide.Deposit oriented layer on tin indium oxide, oriented layer stand friction treatment so that the parallel frictional direction of the orientation of nematic liquid crystal.If the frictional direction of two oriented layer mutually at an angle of 90, then liquid crystal is got the distorted-structure shown in Fig. 4 a.Incide on this liquid crystal cell as polarised light, plane of polarization will be followed the distortion of molecule and rotate 90 ° by liquid crystal cell the time.As placing the 2nd polarizer of the liquid crystal cell other end also to rotate 90 ° relative to the 1st polarizer, light just passes through liquid crystal cell.When voltage puts on the liquid crystal cell, will between the two ends of liquid crystal cell, produce electric field.Liquid crystal molecule will destroy twisted state according to electric field orientation (Fig. 4 b).The polarizer direction that this moment, incident light ran into becomes right-angled intersection, so there is not the light transmission liquid crystal cell.United States Patent (USP) 5,623,514 have described liquid crystal cell, quote its content herein as a reference.
LCD has multiple, comprises passive and Active Matrix Display.The composition of Active Matrix Display can be two terminal parts, as diode ring, and back to back diode (backward diode) and metal-insulator-metal type device.The composition of Active Matrix Display also can be 3 terminal parts, and as thin-film transistor, material wherein is a polysilicon, amorphous silicon, amorphous germanium, cadmium selenide or the like.
Because another technology that following application potential on flat-panel screens being is is being researched and developed energetically is a light-emitting diode, particularly with the light-emitting diode of organic material as electroluminescent layer.The formation of light-emitting diode comprises injecting electrode, electroluminescent layer and electron injection electrode.What hole injecting electrode was the most frequently used is tin indium oxide.
Nowadays, the flat-panel screens overwhelming majority adopts to make based on the active matrix liquid crystal of thin-film transistor.One of course of processing that bothers most during liquid crystal cell is made is that the deposit of indium-tin oxide electrode reaches graphically.Tin indium oxide need at first utilize the evaporation technology deposit.Must carry out a few hours annealing to it at high temperature afterwards.Using photoresist then carries out graphically tin indium oxide.Photoresist is exposed and develops.By etching figure transfer is arrived tin indium oxide.Etching solution is the strong acid mixed liquor.Tin indium oxide generally is deposit before or after the tft layer deposit.In a kind of occasion in back, tin indium oxide acid etching solution can cause defective in film transistor device.
Therefore, preferably develop a kind of new electrode material, new material is compared with tin indium oxide and is handled simply, while light transmission height, good conductivity, environment and Heat stability is good, it is graphical to be easy to utilize photoetching to realize, and has good liquid crystal display performance, as high electric charge reservation degree, low image retention, and good light transmittance/voltage characteristic.Preferably also can develop the better electrode material that light-emitting diode and other devices use and electrically contact.
Conducting polymer is the newer electronic material of a class, can think the candidate materials of having great potentialities of electrode material.This polymer has the electrical property of bond and the potentiality of common Polymer Processing advantage.We introduce and replace and do not replace electrically conductive polyaniline herein, polyparaphenylene, polyazine, poly (phenylenevinylene), polythiophene, poly-furans, polypyrrole, poly-selenophen, polyisothianaphthene, polyphenylene sulfide, polyacetylene, the mixture of the copolymer of polypyridine ethenylidene and their combination and they and other polymer and monomer whose.
In order to adopt these polymer as the substitute material of tin indium oxide or as general electrode, these polymer must have suitable conductivity, be easy to graphical and have high light transmittance in some occasion.In addition, these polymer are not answered outgas, otherwise can cause device contamination.The outgas of conducting polymer can significantly reduce the electric charge reservation degree of display in liquid crystal display cell.In addition, conducting polymer need be easy to realize by photoetching graphical.Graphically can not reduce the conductivity of conducting polymer, also should not cause any deterioration of the performance of conducting polymer.So, preferably can develop a kind of method these polymer are carried out graphically, Perfected process should be to can be used for any conducting polymer system and can not cause negative effect to the performance of conducting polymer.
A kind of potential conducting polymer that can be used as conductive electrode is a polyaniline.Polyaniline (and other conducting polymers) is that the title of quoting herein as a reference is the U.S. Pat P 5,198,153 of " conducting polymer materials and application thereof ", and USP 5,200,112 and USP5, and the gang's polymer described in 202,061.
For considering that conducting polymer as polyaniline, is used as, such as, the conductive electrode of LCD, polymer preferably can show certain performance.As example, description of the invention will be example with the polyaniline, but the present invention is not limited to use polyaniline.These performances comprise:
Preferably conducting polymer in the light transmission of visible region greater than 80%, still show enough conductivity simultaneously and to the contact resistance of device metallurgy.
2. preferably show fine solubility and can form uniform coating.Coating does not preferably comprise particle, streak and tangible pin hole or defective.
3. preferably can be compatible with the oriented layer that is deposited on conductive electrode top; The employed solvent of deposit oriented layer (in most cases being polyimides) should insolublely be separated polyaniline, and do not produce serious interface and mix, and any dopant ion of can from polyaniline, not extracting.The dopant ion of extracting will cause the conductivity of polyaniline to descend and dopant ion might add oriented layer and finally enter liquid crystal, thereby destroy the performance of liquid crystal cell.
4. preferably the thermal stability of polymer can keep temperature to reach 150 ℃ at least.
5. preferably polymer does not show outgas, because any outgas all will cause the performance that enters the ionic soil of liquid crystal and destroy liquid crystal cell.
6. preferably polymer can provide good step covering power.
Preferably polymer need not strong etchant just can be graphical.
Except that above-mentioned polymer performance, it is also very important that the liquid crystal cell of being made by polyaniline also should have some performance.These performances comprise:
1. the relation property of good light transmittance and voltage.
2. good room temperature and high temperature electric charge reservation degree.
3. not residual in room temperature and high temperature hypograph.
A kind of conducting polymer, as polyaniline, it is not apparent can be used in such application and producing above-mentioned performance.Known polyaniline is by the non-conductive form (base) and acid that makes polymer, example hydrochloric acid, and the salt that reaction generates conductivity conducts electricity.This point is at Farad.Discuss.Chem.Soc., in A.G.MacDiamid that delivers in 88,317 and the article of A.J.Epstein introduction arranged.The structure of conductivity form comprises can be by the delocalization polymer radical cation of cloudy counter ion counterionsl gegenions neutralization, the application number of filing an application in January 9 nineteen ninety-five is No.08/370,127, title has introduction in the United States Patent (USP) of " disaggregation conducting polymer and precursor thereof ", quotes as a reference herein.
Make material become conductor and need ion.As everyone knows, in liquid crystal board, exist ion will cause electric charge reservation degree to reduce and the image retention variation, this is at H.Seiberle, M.Schadt is published in SID ' 92 Digest, in the article in 25 (1992) " charge carrier and display parameters are to the passive and Effect on Performance active location LCD " description is arranged.This point is one of problem of making us being concerned about most when adopting polyaniline.Use HCL acid to cause volatile movable ion as dopant.In fact observed low under 40-50 ℃ the temperature HCL from the polyaniline film outgas.This outgas can destroy the performance of liquid crystal (LC), because ion can be moved in the liquid crystal.We here make us finding uncannily, polyaniline can modification and is obtained doped polymer, no matter this doped polymer is at room temperature, the phenomenon that the ion migration enters liquid crystal still at high temperature can not take place, and LCD can have excellent electric charge reservation degree and image retention as a result.
Other care to ion is when polyimide alignment layers is deposited to polyaniline electrode top, to the normally high polar solvent of the employed solvent of polyimides, as NMP (N-methyl pyrrolidone) or γ-Ding Suan lactone, the both is the solvent of quite high polarity, the dopant ion and these ions are moved again enter oriented layer and liquid crystal of can extracting from polyaniline.This can destroy the performance of display again.In addition, the conductivity that will make polyaniline of extracting of these ions reduces.Quite amazing is to have found that polyimide alignment layers and polyaniline compatibility are fairly good and the ion phenomenon of extracting do not occurred.
Polyaniline preferably can provide good light transmittance, and showing simultaneously has enough sheet resistances and contact resistance to following data wire lines.Can regulate the light transmission of polyaniline by reducing thickness, but the sheet resistance of material is increased.Our described herein material list reveals good light transmittance, surface of good resistance and to the excellent contact resistance of metal.
Polyaniline preferably can provide good step to cover.This is a big problem when adopting tin indium oxide.In typical film transistor device structure, adopt tin indium oxide as transparency conductive electrode.Tin indium oxide is by sputtering deposit and uses common photoresist system to carry out photolithography patterning.Utilize the hot solution etching of red fuming nitric acid (RFNA) and mixed in hydrochloric acid agent then.General tin indium oxide is deposit before or after tft layer and passivation layer deposit.For the number that reduces photolithographic mask step generally is to adopt the latter.In this occasion, on passivation layer, form via hole so that the connection of the source/drain metal of the film transistor device under leading to is provided for indium tin oxide layer.Blocked up as passivation layer, the tin indium oxide problem that exists step to cover to via hole then is because tin indium oxide is by the sputtering technology deposit.On the other hand, when passivation layer is thin, generally has pin hole and exist,, and the tin indium oxide acid etching liquid may cause defective in film transistor device or bus.Polyaniline will be by spin coated or roller coating technology deposit.Therefore can provide good step to cover.Polyaniline also need not strong etchant and realizes graphical.
Although the present invention is applicable to multiple device, its introduction is the embodiment by active-matrix liquid crystal display, and particularly at Thin Film Transistor-LCD.As shown in Figure 5, the formation of common film transistor device display 10 comprises liquid crystal cell array or A, each liquid crystal cell comprises a thin-film transistor 11 and is used for by liquid crystal cell being applied voltage liquid crystal cell addressing and a capacitor 12 being used for keeping voltage when transistor disconnects when transistor turns.Transistor is to form on the glass substrate 13 at the back side of display 10 and connecting between columns is according to electrode 14 and column electrode 15 and be connected on the transparent display electrode 16 of each pixel, and all are on the back side of display 10.The front of display is to utilize continuous transparent common electrode 17 to form, and it separates with transparent display electrode 16 and be in parallel.Both formation of electrode 17 and show electrode 16 preferably all is to use the thin conductive transparent material that is carried on the glass substrate, as tin indium oxide.Because the size of the show electrode 16 of each pixel public electrode 17 continuously is little, so when voltage puts between electrode, can produce the field at random that extends outwardly into public electrode from the pixel or the liquid crystal cell edge of show electrode.Parallel with the outside of public electrode 17 and and the polarizer 19 of glass substrate 18 adjacency and be installed in back of the body glass substrate 13 back sides polarizer 20 mutually between suitable orientation.Oriented layer 21 and 22 is disposed at respectively on the inner surface of display and public electrode 16 and 17, and contact with the liquid crystal layer that wherein has the twisted nematic liquid crystal molecule, liquid crystal is to be encapsulated between the glass substrate 1 and 18 of two parallel installations that are loaded with oriented layer 21 and 22.Shine on the display 10 by a diffuser at the back side of display visible light source (not shown).Make display 10 have color as needs, then can be at colour filter 25 of oriented layer one side configuration of public electrode 17, and it comprises 3 primary colors (red, green and blue) groups, the set associative system that each primary colors all constitutes with the pixel A of 3 adjacency and form the color liquid crystal box.
The function of patterned conducting polymer in the liquid crystal cell that has been made into (being polyaniline) is the transparency electrode 16 as each pixel unit in the display 10, and the function of above-mentioned tin indium oxide is as continuous transparency electrode 17.In addition, also be made into liquid crystal cell, wherein the patterned conductive polymer is used as transparency electrode 16, and conducting polymer is continuous coated as continuous transparency electrode 17.Conducting polymer is also as continuous transparency electrode 17, and patterned tin indium oxide can be used as pixel capacitors 16.
Fig. 6 illustrates the top view of the unit box structure of TFT/LCD (thin-film transistor/LCD) display.101 and 102 is data/address buss, and 103 and 104 is grid buss.106,107 and 108 form thin-film transistors, and wherein 108 is projections of 104, and 106 are projections of 101.The 106th, the source electrode, and 107 are drain electrodes.106 and 107 normally adopt same electric conducting material, as metal, make.The 105th, transparent pixel electrode is to be made by conducting polymer by photoetching.Pixel capacitors 105 forms a pixel capacitance device at the top electrode of colour filter one side (not shown) and the liquid crystal (not shown) of between.130 is expansions of 105.130 and 103 by an insulator layer (not shown) separately and form holding capacitor.When the high voltage that is fit to puts on the grid bus 104, the film transistor device conducting.Therefore, pixel capacitance device and holding capacitor are charged to the design voltage that determines the electrooptics characteristic of liquid crystal the pixel by film transistor device from data/address bus 101.Like this, designed image just obtains display.Two sectional structure charts along A-A ' line are shown on Fig. 7 and 8.106 is source electrodes in Fig. 7 and 8, the 107th, and drain electrode, the 108th, gate electrode, the 109th, gate insulation layer, the 110th, amorphous silicon layer, the 111st, the n+ amorphous silicon layer, the 112nd, passivation layer, and 105 are pixel capacitors.In Fig. 8, another layer 113 is arranged on the top of passivation layer 112, this layer is low dielectric transparent polymeric layer.Pixel capacitors 105 places on 113 layer by layer, so pixel capacitors can expand to the top of data/address bus to increase the aperture ratio of pixel.In Fig. 7 pixel capacitors 105 and 107 some be the direct area of coverage.In Fig. 8, this covering is by the via hole on the polymeric layer 113.Fig. 9 illustrates the part of the LCD of having assembled.The 120th, glass substrate.The 121st, chromatic filter layer.The 122nd, the transparent conductive electrode layer.122 can be indium tin oxide layer or transparent conductive polymer layer.The 123rd, shift bed course, and be used for being fixed in the electrode slice (not shown) that drives electronic circuit and be connected by fin.123 are made by metal level.The 124th, conductive epoxy resin is electrically connected with 122 and 123.Like this, 122 just can be connected to the driving electronic circuit by 124 and 123.The 125th, liquid crystal layer.All metal levels among Fig. 6-9 and conductive layer all can be substituted by conducting polymer according to the present invention.
Film transistor device
In present film transistor device electrically contact or electrode is a metal.Metal is by evaporation or sputter procedure deposit, and this requires expensive instrument and equipment.
Suitable polymers comprises replacement and does not replace electrically conductive polyaniline, polyparaphenylene, poly (phenylenevinylene), polythiophene, poly-furans, polypyrrole, poly-selenophen, polyisothianaphthene, polyphenylene sulfide, polyacetylene, polyazine, the mixture of the copolymer of polypyridine ethenylidene and their combination and they and other polymer and monomer whose.
In order to make the contact electrode of these polymer as thin-film transistor, they preferably have suitable conductivity and are easy to graphical.In addition, these polymer preferably not outgas to avoid causing the pollution of using device.In addition, conducting polymer preferably can be realized graphical by photoetching.Graphically preferably neither can cause reducing of conducting polymer, also can not cause any deterioration of conducting polymer performance.
Therefore, preferably developing these polymer are carried out patterned method, is a kind of method that can be applicable to any conducting polymer system and can not have a negative impact to conducting polymer ideally.
Adopt conductive polymer electrodes different as using
At least one as the source electrode in the film transistor device of semiconductor layer and among draining of type conjugated polymer before introduced (H.Koezuka, A.Tsumura, T.Ando, U.S. Patent No. 5,107,308).Grid is to be made of metal all the time in this patent.In addition, when in the drain electrode in film transistor device one was conducting polymer thin film, this film just had patterned metal lead wire.Employed conducting polymer growth method is electrochemical polymerization.Although the author of above-mentioned patent has always described the another kind of method that can be used to form conductive polymer electrodes, they do not provide any solution to conductive polymer coating is patterned into to the shape of desired source electrode and/or drain electrode and the problem that forms transistor channel between electrode.We have proposed to adopt the one or more source electrodes of conducting polymer as film transistor device in the present patent application, the device of drain and gate electrode and make the patterned approach of conductive polymer coating.
Another target of the present invention is that wherein one or more source electrodes, drain and gate electrode are the film transistor devices that is made of conducting polymer.Figure 10 to 13 illustrates the structure of film transistor device.
Figure 10 illustrates a device that is produced on the substrate 61.Patterned conductive polymer grid electrode 62 is disposed on the substrate 61.Insulating barrier 63 is disposed on the gate electrode 62. Source electrode 65 and 66 liang of electrodes of drain electrode of being made of conducting polymer are disposed on the gate insulator 63 also graphical.Semiconductor layer 64 be disposed at source electrode 65 and drain electrode 66 electrodes and gate insulator 63 a part above.
The difference of Figure 11 and Figure 10 is substrate 61 conductions and is used as grid 61.One of this structure special but and nonrestrictive example be to adopt the heavy doping substrate as substrate/gate electrode (61 and 62) and adopt thermal growth oxide 63 as the insulating barrier on it.Other each layers are identical with Figure 10's.
The difference of Figure 12 and Figure 10 is that source electrode 65 and 66 liang of electrodes of drain electrode are configured in the top of semiconductor layer 64, and this layer is before to be configured on the gate insulator.
The difference of Figure 13 and Figure 10 is that source electrode 65 and 66 liang of electrodes of drain electrode are configured in the top of semiconductor layer 64, and this layer is before to be configured on the gate insulator.
Figure 14 illustrates source electrode and the electric current between the drain electrode and the relation curve of gate electrode voltage of the film transistor device that flows through the structure shown in Figure 11 schematic diagram.The channel length of this device, L be 100 microns, and channel width is 1500 microns.
Figure 15 illustrates the top view based on the typical structure of the active matrix liquid crystal display of film transistor device.Source electrode wherein, one or more in the drain and gate electrode are made of polymer.
Figure 16 illustrates the cutaway view based on a pixel of the active matrix liquid crystal display of film transistor device with two different film transistor device configuration Figure 16 (a) and Figure 16 (b).Source electrode wherein, one or more in the drain and gate electrode are made of conducting polymer.
Figure 17 illustrates the via contact hole by passivation layer or insulating barrier.The bottom is a conducting polymer.The upper strata can be same material or different electric conducting materials, as metal, and conducting polymer or tin indium oxide.
LED device
The patterned conductive polymer also can be used to produce electroluminescent diode.More specifically say, the present invention relates to the transparent cathode and the anode construction of light-emitting diode (including OLED), this device can provide the display of partially transparent at least on being produced on transparent substrates the time, and can provide on being made in the opaque substrate that comprises device and circuit the time can from the negative electrode unilateral observation to demonstration.The present invention is applicable to have organic and the light-emitting diode inorganic electroluminescent district.The description of this invention will be reference with the Organic Light Emitting Diode, but be not limited to Organic Light Emitting Diode.
The Organic Light Emitting Diode of describing in the former work is to make on glass substrate, and its underpart electrode is the transparent conductor tin indium oxide.The upper electrode of this device is opaque, thus the light that sends from the electroluminescent district can only from the glass unilateral observation to.Exception be recently by people such as V.Bulovic at Nature380, the structure of being reported in 29 (1996), cathodic metal wherein after the tin indium oxide deposition process in the middle of attenuate and become partially transparent.
Organic light emitting diode display on the opaque substrate or the organic light emitting diode display on the transparent substrates require the upper electrode structure to satisfy following standard: (1) is transparent to the light-emitting diode emission; (2) provide low series resistance electric current to inject to entering the light-emitting diode active region; (3) when forming two-dimensional array spontaneous emission demonstration, this diode provides sufficiently high electrode plane transverse conduction; (4) with the diaphragm that is subject to chemistry and physically impaired organic film under opposing; and (5) can be with the benign pathways deposit; the globality of layer/electrode interface can not cause damage, so can be protected to the organic layer at its deposit place.The transparent electrode material commonly used of the anode through being commonly used for Organic Light Emitting Diode is a tin indium oxide, 1-4 can meet the demands, but because it normally produces deposit in the oxygen plasma environment that damages in meeting to the organic district in the organic light emitting diode device structure, so can not satisfy (5).To too as the GaN situation of electrode.Standard (5) is actually the most marginal, although because have several transparent conductive materials, nearly all material all involves the plasma or the high treatment temperature that can cause irreversible damage to luminous organic material.
What need is transparent cathode and/or the anode construction of being convenient to make and can satisfying all above-mentioned requirements.
Therefore, preferably develop the electrode material that makes new advances, its processing technology is simpler than tin indium oxide, but can provide high light transmittance, satisfactory electrical conductivity, environment and thermal stability again simultaneously and be easy to realize by photoetching graphical.
The formation of typical light-emitting diode comprises hole injecting electrode, electroluminescent layer and electron injection electrode.This is a kind of basic structure.Sometimes hole transmission layer can be incorporated between injecting electrode and the electroluminescent layer to improve the mobility and the isolated hole in hole.Also have, electron transfer layer also can be included between electroluminescent layer and the electron injection electrode.
Electroluminescent layer can be a conjugatd polymers, organic molecule, and as the AlQ material, or inorganic material, as GaAs.Typical hole injecting electrode comprises tin indium oxide.The typical electronic injecting electrode comprises aluminium, calcium or the like.
The conductive doped polymer of P according to the present invention can be used as hole injection layer, and the conductive doped polymer of M according to the present invention can be used as electron injecting layer.
The structure of the Organic Light Emitting Diode 300 of prior art shown in Figure 18.Substrate 312 is a glass, and indium tin oxide films 314 directly is deposited on glass and form anode.But for efficient operation, organic district generally includes multilayer, and shown in Figure 18 is hole injection layer 316, hole transmission layer 318 and electroluminescent (EL) layer 320.EL layer 320 is metallo-chelate three (oxine) aluminium, (being abbreviated as S or Alq3 sometimes).Hole transmission layer in this structure is fragrant diamine.Metal alloy MgAg is deposited on the organic substance forming negative electrode 322, and this cathode thickness is opaque during greater than about 10nm.Not shownly be used for protecting negative electrode to avoid the hermetic seal of aqueous vapor effect sometimes.
The EL layer of Figure 18 structure is a member that is called in the organic one group of organic material of molecule.These are to utilize the evaporation technology deposit successively.Polymer forms another group electroluminescent organic material of demonstration and normally applies by spin coated.Polymer organic LED also is to utilize indium-tin oxide anode to be made on the glass substrate and have opaque negative electrode (normally low workfunction metal, as calcium) usually, and light can only be launched from a side as a result.They also can use multiple layer polymer to increase work efficiency.
Embodiment of light-emitting diode of the present invention is the Organic Light Emitting Diode with transparent cathode 340, and its general configuration is shown among Figure 19.Be formed in glass substrate 332 or have on the plasticity substrate of tin indium oxide (or conducting polymer) anode 334 as Organic Light Emitting Diode, then this time is just from the both sides emission, and Organic Light Emitting Diode is partially transparent at least.When an observer watches the display that is made of such organic LED array attentively, both can concentrate on the image that presents on the display, also can see the scene of back by display.On the other hand, form on opaque substrate such as silicon and utilization has the display of the Organic Light Emitting Diode of transparent cathode and can observe by watching attentively from the light of cathode side emission.It is favourable making organic light emitting diode display on silicon, because device and circuit can form before being deposited with OLED on the silicon, and device and circuit can be used to make the Active Matrix Display that has integrated drive electronics.
According to the present invention, the male or female of light-emitting diode can be undermined scratch resistant conducting polymer protective layer and formed or cover by wear-resistant, as included by quoting herein.From the Organic Light Emitting Diode with section as shown in figure 19 launch the both sides of diode (promptly from) penetrates only from top and bottom because anode and negative electrode both are transparent.
Conducting polymer described herein can provide gratifying cathode electrode by satisfying to requirements such as the transparency, the vertical conduction that is used for low series resistance, formation diaphragm and not damaged depositing technics.Undermine scratch resistant conducting polymer is " conduct electricity and the polymeric material that resistance to wears/scratch and preparation method thereof and use " at title application number and be No.08/193 about wear-resistant, 926, date of application is February 9,1994 and application number be No.08/476,141, date of application is June 7, in two U.S. Patent applications of 1995 description is arranged, and quotes its content herein as a reference.Below each is required to consider respectively.
Display device is to form by make a plurality of identical Organic Light Emitting Diodes on a bulk substrate, and Organic Light Emitting Diode wherein is arranged in two-dimensional array form and has the photoemissive device that control is sent from each diode.Say that generally image is (the passive matrix mode) that is formed by a lead on Figure 20 A, such as, make selected capable lead 490 be in positive voltage Vr, and all not chosen capable leads 492 keep earth potential.Each column wire 494,496 is applied a voltage, wherein i be the column wire index and until maximum number of column till.So just equal Vr-Vci and this voltage just determines luminous quantity along the forward bias of selected capable lead 490 on Organic Light Emitting Diode 498,400.Be applied with reverse bias on the every other Organic Light Emitting Diode 402,404, so not luminous.
For being shown in the array of Figure 20 A, have only that Organic Light Emitting Diode just can be luminous when addressing is this row lead, in showing, the high information content produces a flicker.This can be remedied by the array shown in Figure 20 B (active matrix mode), uses the circuit that comprises in each crosspoint to come column conductor voltage sampling in this manner and keeps by other row leads of addressing.In this occasion, the shared common cathode of all diodes.Because it is little and fast that these circuit need, most convenient is to make monocrystalline silicon.In this 2nd kind of occasion, substrate is opaque and need a transparent negative electrode observe image.
The list of references that quote in this place thereby be for reference being included in herein.The application number that transfers the assignee of the present invention is No.08/794,072, and the date of application is February 4, and 1997 U.S. Patent application has been described the structure and the manufacture method of Organic Light Emitting Diode, and its content is included in herein as a reference.
Patterned method
In order can or to electrically contact as electrode, conducting polymer preferably passes through graphically.Described multiple can be used to herein various conducting polymers have been carried out patterned method.
These methods comprise that the surface to conducting polymer applies erosion resistant.Resist can be that negativity also can be a positivity, and can develop in aqueous solvent or organic solvent.The example of negative resist has the polymethyl methacrylate class; linear novolaks/diazo naphthoquinone system; the styrene polymer and the copolymer thereof of the protection of tert-butoxy phosphinylidyne; the styrene polymer and the copolymer thereof of tertiary butyl protection; the styrene polymer and the copolymer thereof of tertiary butyl protection, the acrylate polymer of other sour legibility deprotections and copolymer thereof.These are example and be not limited to these.The example of positive corrosion-resisting agent has the epoxy-based polymerization of containing thing, has the hydroxystyrene polymers of crosslinking agent, and siloxane polymer.These are example, and are not limited to these.Make resist to given radiant exposure, this class radiation such as ultraviolet, electron beam, X ray and ion beam utilize developer to develop developer such as tetramethylammonium hydroxide aqueous solution afterwards, the NaOH aqueous solution, the KOH aqueous solution, methyl iso-butyl ketone (MIBK), the tetraethyl ammonium hydroxide aqueous solution, isopropyl alcohol, propylene, Ethylene Glycol Methyl ether acetic acid ester, diethylene glycol dimethyl ether, methyl ethyl ketone or the like.These are example and be not limited to these.Afterwards by reactive ion etching (RIE) with this resist image transfer to conducting polymer, such as adopting oxygen, CO
2, SO
2, fluorine or the like.One works as image transfer to conducting polymer, just remaining resist is removed, and preferably uses a kind of solvent clean, as acetone, and diethylene glycol dimethyl ether, isopropyl alcohol or the like.This scheme is shown among Figure 21.Preferably be used for applying solvent and the developer of resist and the development conditions of resist of resist, and can not make the performance of conducting polymer with the solvent that removes resist, as conductivity, light transmission, thermal stability or the like, deterioration.
The 2nd kind makes the method for patterns of electrically conducting polymersization is the method that adopts at the surface deposition metal of conducting polymer, and used metal comprises as aluminium, gold or the like.Graphical metal level is deposited on the conducting polymer by metal mask.Afterwards by reactive ion etching (RIE) with this figure transfer to conducting polymer, such as adopting oxygen, CO
2, SO
2, fluorine or the like.Utilize acid solution then, example hydrochloric acid, hydrofluoric acid, acetate, sulfuric acid, perchloric acid, phosphoric acid, metal etch is fallen in nitric acid and any combination thereof.This scheme is shown in Figure 22.Preferably the condition when metal deposit and etching can not have a negative impact to the performance of conducting polymer.
The 3rd kind makes the method for patterns of electrically conducting polymersization is to adopt the method that covers metal at the surface deposition of conducting polymer, and used metal comprises as aluminium, gold or the like.Make metal patternization by resist.Make resist to radiant exposure, this class radiation such as ultraviolet light, visible light, electron beam, X ray, ion beam also adopts with aforementioned similar developer and develops, and passes through, such as, use aforesaid acid solution to metal carry out etching with figure transfer to metal level.Afterwards by reactive ion etching with this figure transfer to conducting polymer, such as adopting oxygen, CO
2, SO
2, fluorine or the like.Utilize the removal of solvents resist then, remove metal by acid etching agent similar to the above afterwards.This scheme is shown in Figure 23.Preferably above-mentioned treatment step and in these treatment steps employed solvent can infringement not arranged to the performance of conducting polymer.
The 4th kind makes the method for patterns of electrically conducting polymersization is directly to radiant exposure.The conducting polymer radiation-sensitive is so produce difference through irradiation solubility between exposure region and unexposed area.Radiation can be an electron beam, ion beam and electromagnetic radiation (as X ray and light).In this occasion, the zone that the solubility after overexposure is higher can be removed by solvent clean, and the result produces direct patterns of electrically conducting polymers.This scheme is shown in Figure 24, and as United States Patent (USP) 5,198,153 is described, and its content is quoted as a reference herein.
In all above-mentioned occasions, radiant exposure can comprise electromagnetic radiation, as the light of X ray and various wavelength, and can comprise charged and non-charged particle beam, as electron beam, and ion beam and elementary particle bundle.
Concrete example is as follows:
1. the application number of herein quoting as a reference that proposes on February 2nd, 1996 is No.08/595, the polyaniline that mixes with the acrylamide propane sulfonic acid described in 853 the U.S. Patent application by spin coated on glass substrate, employed appropriate solution comprises positive methyl pyrrolidone, metacresol, dimethylpropylene urea, dimethyl sulfo group dimethyl formamide or the like.The thickness of coating can be controlled by the concentration and the rotary speed of the polymer in the solution.0.1% to 5% polymer solution in the given solvent of general application.The thickness of coating is at 500 to 1000 dusts.The conductivity of film is 1 to 150S/cm in (west/centimetre).The film of coating toasts 5 minutes to remove remaining solvent in 85 ℃ stove.On this polyaniline surface, apply common Shipley photoetching resist (MP1808).Resist was 85 ℃ of bakings 30 minutes.The polyaniline substrate that will be coated with resist then is to ultraviolet photoetching, and dosage is 70mj.In alkaline Micropos CD-30 reagent solution, develop afterwards.Because alkaline developer can make the polyaniline dedoping and its conductivity is descended, so preferably strict control developer and developing time.In this occasion, concentration of developer can dilute 50% with deionized water.Resist developed 30 seconds, used water rinse afterwards.To solidify 30 minutes so that resist hardened before image transfer at 1 ℃ through the resist that develops then.Then by the oxygen reactive ion etching with the resist image transfer to polyaniline.The etching of polyaniline is to use 150 watts RF (radio frequency) power termination, carries out in the reactive ion etching device 2 minutes at the oxygen of 100 millitorr pressure and 20sccm (per minute standard cubic centimeter).After image transfer, remaining photoetching resist utilizes the acetone flush away.Electrically conductive polyaniline lead at 10 microns that make by this way shown in Figure 25 and 26.Find that through measuring the back conductivity and the initial conductivity of polyaniline figure are similar.In other words, the result of this technical process obviously reduces conductivity.To other performances, comprise light transmission, thermal stability and comprehensive Environmental Chemistry stability are are also evaluated and tested, and this is discussed below.
2. will gather (3-butyl thiophene-2,5-double-basis) be dissolved in the appropriate solvent (as oxolane, methyl ethyl ketone, N-methyl pyrrolidone or the like) and spin coated on glass plate.Then film is exposed in the iodine chamber polythiophene is mixed.Afterwards with doped samples pumping under dynamic vacuum.The conductivity that obtains is 1000 to 2000S/cm.Adopt the Shipley photoetching resist MP1808 that as above uses that this film is carried out graphically in the face of polyaniline.
3. will gather (3-hexyl thiophene-2,5-double-basis) and dissolve as stated above, coating and mix and graphical by above-mentioned example 1.
4. will gather (3-octyl group thiophene-2,5-double-basis) handles and graphical as stated above.
5. polypyrrole is deposited on the glass plate by following mode.Pyrrole monomer (0.045M) is dissolved in 500 milliliters the water.In the 2nd beaker in 500 ml waters dissolved oxidant FeCl
3(.015M).Then the 5-sulfosalicylic acid of (.015M) and 5-anthraquinone-2-sulfonic acid sodium salt (.015M) are added in the oxidizing agent solution.The glass plate that one side is had mask immerses in the monomer solution.Then oxidizing agent solution is added in the monomer solution.Make solution reaction 10 to 30 minutes so that monomer carries out polymerization and is deposited on the glass plate.The thickness that is deposited on the electric polypyrrole on the glass plate depends on allows glass plate rest on time in the polymerization tank.The conductivity that polypyrrole has is approximately 200S/m.By above-mentioned resist the polypyrrole that is deposited on the glass plate is carried out graphically afterwards.
6. the polyaniline spin coated that will utilize the doping of acrylamido propane sulfonic acid is on glass plate.The aluminium coating of evaporation one deck 300 dusts on polyaniline.The resist layer that will be 2.0 microns based on the thickness of Shipley polypropylene glycol ether acetic acid esters solvent is coated on the aluminium.This resist layer is to utilize after the ultraviolet photoetching of 150mj 50/50 Microposit developer concentrate and deionized water mixed liquor to develop to dosage.After the development, resist was toasted 30 minutes at 85 ℃.Then by at room temperature to the aluminium etching with figure transfer to aluminium, etching solution be by 80% phosphoric acid, the Transene aluminium etching solution of 5% acetate, 5% nitric acid and 10% water composition.Etch-rate was 4.19 dust/seconds.And figure is transferred on the polyaniline with the etch-rate of 39 dust/seconds by the oxygen reactive ion etching in the oxygen of 100 millitorr pressure and 20sccm (per minute standard cubic centimeter) by the power termination of 150 watts of application.Another is at 30 ℃ of following etching aluminium with figure transfer to the method on the polyaniline.Aluminium and polyaniline both are subjected to the acid solution etching when improving temperature, and etch-rate was 37 dust/seconds.Remaining resist cleans by acetone and removes.Remaining aluminium can adopt the dilute hydrochloric acid solution of dilution 25% to remove.Figure 27,28 and 29 illustrate in this way patterned electrically conductive polyaniline.
7. the substituting polythiophene of introducing above and the polypyrrole of polymerized in-situ also are to utilize the aluminium of describing according to top p-poly-phenyl amine to cover metal to carry out graphically.
8. polyaniline acrylamido propane sulfonic acid is deposited on a side of glass.On this surface, pass through metal mask deposit aluminum conductor figure.This figure is transferred on the polyaniline by the oxygen reactive ion etching.Then remaining aluminium is etched away with dilute hydrochloric acid solution.This method is because its sizable characteristics and very desirable.Adopt this mode can make 50 microns polyaniline lead shown in Figure 30 and 31.
9. adopt this mode also can the polypyrrole of substituted thiophene and polymerized in-situ to be carried out graphically.
10. polyaniline acrylamido propane sulfonic acid can directly make film to the radiant exposure as the electron beam and graphical.After the irradiation, polymer is through crosslinked and become soluble.Unexposed area useable solvents flush away and form the figure of electrically conductive polyaniline.
Conducting polymer can be by spin coated, dip coating, roller coat, the spraying and be coated on the substrate, also can carry out chemistry or electrochemical polymerization at the scene in its surface.
For making conducting polymer can be applicable to LCD, the light transmission of film in the visible region preferably greater than 80%.Figure 32 illustrates the light transmission (covering and graphical lead) of polyaniline acrylamido propane sulfonic acid.As seen from the figure, as the film of 500 dusts, polymer shows the light transmission greater than 90% in whole visible region.This typical light transmission with anneal oxidation indium tin is consistent.The conductivity of polyaniline lead is approximately 100S/m, and preferably greater than 100S/m.Material list reveals environmental stability, and its conductivity does not change in time in air.Material shows thermal stability under 150 ℃.
Because the performance of the performance of material is good, so just be assembled into liquid crystal cell, two electrodes of one of them liquid crystal cell all adopt conducting polymer to make such as polyaniline, and another is an electrode employing polyaniline then, and another electrode adopts tin indium oxide.All adopt the occasion of polyaniline at two electrodes, an electrode is made up of graphical lead, and the 2nd electrode is made up of coverlay.Spin coated polyimides on polyaniline (Nissan SE5210) oriented layer.Polyimides solidified 1 hour down at 125 ℃.The thickness of film is 500 dusts.Then polyimide layer is carried out mechanical friction.Filling comprises the Merck liquid crystal of left hand reagent in the test liquid crystal cell.Polarizer is attached to the outside of glass, and its axis of homology is parallel with frictional direction.Like this, just finished 90 ° of twisted-nematic phase studies of right hand plate.Performance to this liquid crystal cell is measured.Figure 33 illustrates the light transmission/voltage response of the liquid crystal cell of being made up of two polyaniline electrodes.This curve is consistent with the light transmission/voltage response (Figure 34) of the crystal that indium-tin oxide electrode is formed.The electric charge reservation degree that comprises the liquid crystal of polyaniline electrode at room temperature is 95% (Figure 35).This is also consistent with the electric charge reservation degree of the liquid crystal cell performance of being made up of indium-tin oxide electrode.The image retention of liquid crystal cell is also consistent well.
Figure 41 illustrates the surface 411 of the substrate 413 with configuration material layer 415 thereon and is configured in material layer 417 on the surface 411, and its configuration mode makes material layer 417 layer of cover material 415 on the area of coverage 419.Material 417 can be according to conducting polymer of the present invention, and material 415 can be non-polymer conducting material, as metal or semiconductor.Also have, two zones 417 and 415 can all be conducting polymers also.
Figure 42 illustrates the surface 423 of the substrate 421 with material layer 425 and 427, and material layer 425 and 427 is with interface 429 adjacency.Material 425 and 427 can be that one of conducting polymer or layer 425 and 427 can be conducting polymers, and another is non-polymer conducting material, as metal or semiconductor.
Utilize the graphic method of the conducting polymer of introducing herein and utilize the graphic method of non-polymer electric conductor well known in the prior art can be easy to produce the structure of Figure 41 and 42.
The schematically illustrated bipolar transistor of Figure 43, its formation comprises substrate 802, buries secondary collector electrode 804, light doping section 896, base region 808, emitter region 810, dielectric layer 812 and the high-doped zone 814 that touches secondary collector electrode 804.Dielectric layer has window 816 and is used to connect emitter; Window 818 is used to connect the base region and window 820 is used for bonding pad 814 with auxiliary connection collector electrode 804.Patterned electric conductor or electrode 822,824 and 826 provide respectively emitter, and each district of base stage and collector electrode contacts.
Electrode 822,824 and 826 can be formed by conducting polymer according to the present invention.Conducting polymer forms the ohmic contact that connects active device region 810,808 and 814.
Polyparaphenylene is conducted electricity in serve as reasons replacement that its solubility precursor forms and replacing of the example that can be used to realize conducting polymer of the present invention, poly (phenylenevinylene), polyaniline, polyazine, polythiophene, polyparaphenylene thioether, poly-furans, polypyrrole, poly-selenophen, the copolymer of polyacetylene and their composition and monomer.The general molecular formula of these polymer, structure and the using method thereof of utilizing them to make can be at the United States Patent (USP)s 5 of authorizing people such as Angelopoulos, 198,153 and 1994, the application number of filing an application February 9 is No.08/193, the U.S. Patent application that 926 application is awaited the reply and 1995, and the application number of filing an application June 7 is No.08/476, find in the U.S. Patent application that 141 application is awaited the reply, quote its content herein as a reference.
To have introduced the polyaniline compound conducting polymer be to be hopeful most and be the optimum conducting polymer that is applied to wide commercial field.Polymer has excellent environmental stability and can provide a simple step synthetic.Can prepare a large amount of soluble derivatives.Such as, we are before at United States Patent (USP) 5,370, disclose the new water-soluble electrically conductive polyaniline of gang in 825, quote its content herein as a reference.
Following United States Patent (USP) has been described realizing the useful resist of the present invention, quotes its content herein as a reference:
5,580,694，5,554,485，5,545,409，5,492,793，5,401,614，5,296,332，5,240,812，5,071,730，4,491,628，5,583,620，5,561,194，5,547,812，5,498,765，5,486,267，5,482,817，5,464,726，5,380,621，5,374,500，5,372,912，5,342,727，5,304,457，5,300,402，5,278,010，5,272,042，5,266,444，5,198,153，5,164,278，5,102,772，5,098,816，5,059,512，5,055,439，5,047,568，5,045,431，5,026,624，5,019,481，4,940,651，4,939,070，4,931,379，4,822,245，4,800,152，4,760,013，4,551,418，5,338,818，5,322,765，5,250,395，4,613,398，4,552,833，5,457,005，5,422,223，5,338,818，5,322,765，5,312,717，5,229,256，5,286,599，5,270,151，5,250,395，5,238,773，5,229,256，5,229,251，5,215,861，5,204,226，5,115,095，5,110,711，5,059,512，5,048,358，5,023,164，4,999,280，4,981,909，4,908,298，4,867,838，4,816,112，4,810,601，4,808,511，4,782,008，4,770,974，4,693,960，4,692,205，4,665,006，4,657,845，4,613,398，4,603,195，4,601,913，4,599,243，4,552,833，4,507,331，4,493,855，4,464,460，4,430,153，4,307,179，4,307,178，5,362,599，4,397,937，5,567,569，5,342,727，5,294,680，5,273,856，4,980,264，4,942,108，4,880,722，4,853,315，4,601,969，4,568,631，4,564,575，4,552,831，4,522,911，4,464,458，4,409,319，4,377,633，4,339,522，4,259,430，5,209,815，4,211,843，5,260,172，5,282,264，5,227,280，5,024,896，4,904,564，4,828,964，4,745,045，4,692,405，4,606,998，4,600,683，4,449,243，4,567,132，4,564,484，4,562,091，4,539,222，4,493,855，4,456,675，4,359,522，4,289,573，4,284,706，4,238,559，4,224,361，4,212,935，4,204,009，5,091,103，5,124,927，5,378,511，5,366,757，4,590,094，4,886,727，5,268,260，5,391,464，5,115,090，5,114,826，4,886,734，4,568,601，4,678,850，4,543,319，4,524,126，4,497,891，4,414,314，4,414,059，4,398,001，4,389,482，4,379,826，4,379,833，4,187,331.
Preferred embodiment is described though The present invention be directed to, and for the technology personage, do not break away from the spirit and scope of the present invention and can finish multiple remodeling, changes and improvements.
Claims (131)
1. structure comprises:
Electronic device with the electroactive part that has the surface;
Described surface has dielectric layer, has a window to expose electroactive part on this dielectric layer;
Described window has periphery;
The conductive polymer coating that on described dielectric layer, disposes;
Described conductive polymer coating electrically contacts by described periphery and the described electroactive part that described window and covering are configured on the described dielectric layer
2. structure as claimed in claim 1, wherein said electronic device have a plurality of windows and expose a plurality of electroactive districts on described dielectric layer, described conducting polymer electrically contacts described a plurality of electroactive district; Described conducting polymer has the part that described contact is attached to the described a plurality of electroactive districts that expose.
3. structure as claimed in claim 1, wherein said conductive polymer coating has figure.
4. structure as claimed in claim 1, wherein said electric conducting material is from comprising one or more replacements and unsubstituted poly (phenylenevinylene), polyparaphenylene, polyaniline, polythiophene, polyazine, poly-furans, polypyrrole, poly-selenophen, the polyparaphenylene thioether is selected in one group of material of the mixture of the copolymer of polyacetylene and their combination and they and other polymer and monomer whose.
5. structure comprises:
The surface;
Be deposited on described lip-deep conductive polymer coating with figure;
Described conductive polymer coating at least a portion contacts with described surface electrical;
Other parts of described conductive polymer coating and described surface do not electrically contact.
6. structure as claimed in claim 5 wherein also comprises the dielectric material that is configured between described other parts and the described surface.
7. structure as claimed in claim 5, wherein said surface are to select from the group of being made up of electric conductor and semiconductor.
8. structure as claimed in claim 7, wherein said semiconductor are to be formed by a kind of material of selecting from the group that organic material and inorganic material constitute.
9. structure as claimed in claim 7, wherein said electric conductor are to be formed by a kind of material of selecting from the group that metal and polymer constitute.
10. structure as claimed in claim 1, wherein said electronic device is from liquid crystal device, transistor device is selected in the group that luminescent device and extinction device constitute.
11. as the structure of claim 10, wherein said transistor is to select from the group of bipolar transistor and field-effect transistor formation.
12. as the structure of claim 10, wherein luminescent device is a light-emitting diode.
13. as the structure of claim 10, wherein the extinction device is a charge coupled device.
14. a structure comprises:
Conductive surface with periphery;
Conductive polymer coating with periphery;
The described periphery of described conductive surface has the zone of not aiming at the described periphery of described conductive polymer coating.
15. a liquid crystal display device structure comprises:
The 1st substrate;
The 2nd substrate;
Be configured in the liquid crystal layer between the 1st substrate and the 2nd substrate;
At least one of described the 1st substrate and the 2nd substrate have configuration conducting polymer thereon can provide the device that current potential is put on described liquid crystal layer two ends.
16. structure as claim 15, wherein said electric conducting material is from comprising one or more replacements and unsubstituted poly (phenylenevinylene), polyparaphenylene, polyaniline, polythiophene, polyazine, poly-furans, polypyrrole, poly-selenophen, the polyparaphenylene thioether is selected in one group of material of the mixture of the copolymer of polyacetylene and their combination and they and other polymer and monomer whose.
17. as the structure of claim 15, wherein said the 1st substrate has configuration the 1st conductive polymer coating thereon, described the 2nd substrate has configuration the 2nd conductive polymer coating thereon.
18. as the structure of claim 15, wherein said conductive polymer coating is a continuous film.
19. as the structure of claim 15, wherein said conductive polymer coating is by graphical.
20. as the structure of claim 17, wherein said the 1st conductive polymer coating is a continuous film, and the 2nd conductive polymer coating is patterned.
21. as the structure of claim 15, one of wherein said the 1st substrate and described the 2nd substrate have configuration conductive polymer coating thereon, and other described the 1st substrate and the 2nd substrate have configuration indium tin oxide layer thereon.
22. as the structure of claim 15, wherein said conducting polymer has dopant.
23. as the structure of claim 15, wherein said structure is a transparent configuration.
24. as the structure of claim 15, wherein said structure is a catoptric arrangement.
25. as the structure of claim 15, its formation also comprises at least one polarization layer and at least one liquid crystal aligning layer that contacts with liquid crystal layer.
26. as the structure of claim 23, wherein said the 1st substrate and the 2nd substrate both are transparent to electromagnetic radiation.
27. as the structure of claim 15, one of wherein said substrate is transparent to electromagnetic radiation, and another described substrate reflecting electromagnetic radiation.
28. as the structure of claim 15, wherein said the 1st substrate and the 2nd substrate are by from glass, the material of selecting in the group that semiconductor and pottery constitute forms.
29. as the structure of claim 15, wherein said the 1st substrate is a glass, and described the 2nd substrate is a semiconductor.
30. as the structure of claim 15, wherein said conducting polymer is transparent.
31. as the structure of claim 27, wherein said reflective also comprises circuitous pattern on it.
32. as the structure of claim 31, wherein said circuitous pattern comprises patterned conducting polymer.
33. a liquid crystal display device, its formation comprises conducting polymer.
34. a structure, its formation comprises:
The 1st substrate with the 1st and the 2nd apparent surface, this surface have and are disposed at its described the 1st lip-deep the 1st conductive polymer coating;
Be disposed at the 1st oriented layer on the described conductive layer;
The 2nd substrate with the 1st and the 2nd apparent surface, this surface have and are disposed at its described the 1st lip-deep the 2nd conductive polymer coating, are disposed at the oriented layer on described the 2nd conductive layer;
Be disposed at the described the 2nd lip-deep the 1st polarization layer of described the 1st substrate;
Be disposed at the described the 2nd lip-deep the 2nd polarization layer of described the 2nd substrate;
Described the 1st substrate arrangement becomes in abutting connection with described the 2nd substrate to make described the 1st oriented layer in the face of described the 2nd oriented layer;
Forming cavity at the sealing spacing body between described the 1st substrate and the 2nd substrate between sealing spacing body and described the 1st substrate and between described the 2nd substrate and the sealing spacing body;
Described cavity is filled with liquid crystal material;
At least one is a conductive polymer coating in the described the 1st and the 2nd conductive layer.
35. liquid crystal display device structure as claim 12, wherein electric conducting material is from comprising one or more replacements and unsubstituted poly (phenylenevinylene), polyparaphenylene, polyaniline, polythiophene, polyazine, poly-furans, polypyrrole, poly-selenophen, the polyparaphenylene thioether is selected in one group of material of the mixture of the copolymer of polyacetylene and their combination and they and other polymer and monomer whose.
36. a liquid crystal display device structure comprises:
Semiconductor substrate with the 1st surface and the 2nd surface;
Reflector on the described the 1st surperficial at least a portion;
The transparent surface of described relatively Semiconductor substrate separate configuration;
Be disposed at the liquid crystal material between described semiconductor and the described transparent substrates;
Be disposed at described transparent substrates and the Semiconductor substrate conductive polymer coating at least one.
37. structure as claim 36, wherein electric conducting material is from comprising one or more replacements and unsubstituted poly (phenylenevinylene), polyparaphenylene, polyaniline, polythiophene, polyazine, poly-furans, polypyrrole, poly-selenophen, the polyparaphenylene thioether is selected in one group of material of the mixture of the copolymer of polyacetylene and their combination and they and other polymer and monomer whose.
38. a structure comprises:
Substrate;
The graphical grid that forms by the patterned conductive material that is disposed on the described substrate;
Be disposed at the insulating barrier on the described graphical grid;
Be disposed at the graphical source electrode on the described insulating barrier;
Be disposed at the graphical drain electrode on the described insulating barrier;
Described graphical grid, at least one is to be formed by conducting polymer in described graphical source electrode and the described graphical drain electrode;
Be disposed between described graphical source electrode and the graphical drain electrode and be disposed at semi-conducting material on the described insulating barrier.
39. structure as claim 38, wherein conducting polymer is from comprising one or more replacements and unsubstituted poly (phenylenevinylene), polyparaphenylene, polyaniline, polythiophene, polyazine, poly-furans, polypyrrole, poly-selenophen, the polyparaphenylene thioether is selected in one group of material of the mixture of the copolymer of polyacetylene and their combination and they and other polymer and monomer whose.
40. as the structure of claim 38, wherein said semi-conducting material is to select from the group of organic material and inorganic material formation.
41. a structure comprises:
Conductive substrates;
Described substrate is a gate electrode;
Be disposed at the insulating barrier on the described substrate;
Be disposed at the graphical source electrode on the described insulating barrier;
Be disposed at the graphical drain electrode on the described insulating barrier;
At least one is formed by conducting polymer in described source electrode and the described drain electrode;
Be disposed between described graphical source electrode and the graphical drain electrode and be disposed at semi-conducting material on the described grid.
42. structure as claim 41, wherein conducting polymer is from comprising one or more replacements and unsubstituted poly (phenylenevinylene), polyparaphenylene, polyaniline, polythiophene, polyazine, poly-furans, polypyrrole, poly-selenophen, the polyparaphenylene thioether is selected in one group of material of the mixture of the copolymer of polyacetylene and their combination and they and other polymer and monomer whose.
43. as the structure of claim 41, wherein said semi-conducting material is to select from the group of organic material and inorganic material formation.
44. as the structure of claim 41, wherein said substrate is from silicon, selects in the group that germanium and GaAs constitute.
45. a structure comprises:
Substrate;
Be disposed at the graphical grid on the described substrate;
Described grid is an electric conducting material;
Be disposed at the insulating barrier on the described graphical grid;
Be disposed at the semiconductor layer on the described insulating barrier;
Be disposed at the graphical source electrode on the described semiconductor layer;
Be disposed at the graphical drain electrode on the described semiconductor layer;
Described graphical grid, at least one is a conducting polymer in described graphical source electrode and the described graphical drain electrode.
46. structure as claim 45, wherein conducting polymer is from comprising one or more replacements and unsubstituted poly (phenylenevinylene), polyparaphenylene, polyaniline, polythiophene, polyazine, poly-furans, polypyrrole, poly-selenophen, the polyparaphenylene thioether is selected in one group of material of the mixture of the copolymer of polyacetylene and their combination and they and other polymer and monomer whose.
47. as the structure of claim 45, wherein said semi-conducting material is to select from the group of organic material and inorganic material formation.
48. as the structure of claim 47, wherein said semiconductor layer is from Si, Ge, and G selects in Ar and the combination thereof.
49. a structure comprises:
Conductive substrates;
Described substrate is a gate electrode;
Be disposed at the insulating barrier on the described grid;
Be disposed at the semiconductor layer on the described insulating barrier;
Be disposed at the graphical source electrode on the described semiconductor layer;
Be disposed at the graphical drain electrode on the described semiconductor layer;
Described grid, at least one is a conducting polymer in described graphical source electrode and the described graphical drain electrode.
50. structure as claim 49, wherein conducting polymer is from comprising one or more replacements and unsubstituted poly (phenylenevinylene), polyparaphenylene, polyaniline, polythiophene, polyazine, poly-furans, polypyrrole, poly-selenophen, the polyparaphenylene thioether is selected in one group of material of the mixture of the copolymer of polyacetylene and their combination and they and other polymer and monomer whose.
51. as the structure of claim 49, wherein said semi-conducting material is to select from the group of organic material and inorganic material formation.
52. a structure comprises:
Insulating barrier with the 1st side and the 2nd side;
Be configured in the grid of described the 1st side of described insulating barrier;
Be configured in the semiconductor layer of described the 2nd side;
Be configured to the graphical source electrode that electrically contacts with described semiconductor layer;
Be configured to the graphical drain electrode that contacts with described semiconductor layer;
Described graphical grid, at least one is a conducting polymer in described graphical source electrode and the described graphical drain electrode.
53. structure as claim 52, wherein conducting polymer is from comprising one or more replacements and unsubstituted poly (phenylenevinylene), polyparaphenylene, polyaniline, polythiophene, polyazine, poly-furans, polypyrrole, poly-selenophen, the polyparaphenylene thioether is selected in one group of material of the mixture of the copolymer of polyacetylene and their combination and they and other polymer and monomer whose.
54. as the structure of claim 53, wherein said semi-conducting material is to select from the group of organic material and inorganic material formation.
55. a structure comprises:
The semiconductor layer of from the group of organic and inorganic semiconductor formation, selecting;
Be disposed at the patterned conductive polymeric layer on the described semiconductor layer;
Described patterned conductive layer forms the ohmic contact to described semiconductor layer.
56. structure as claim 55, wherein conducting polymer is from comprising one or more replacements and unsubstituted poly (phenylenevinylene), polyparaphenylene, polyaniline, polythiophene, polyazine, poly-furans, polypyrrole, poly-selenophen, the polyparaphenylene thioether is selected in one group of material of the mixture of the copolymer of polyacetylene and their combination and they and other polymer and monomer whose.
57. a structure comprises:
The electroluminescent district;
Anode;
Negative electrode;
At least one is a conducting polymer in described anode and the negative electrode.
58. as the structure of claim 58, wherein said conducting polymer is to select from the group of hole-injecting material and electronics injection material formation.
59. as the structure of claim 58, wherein said conducting polymer is patterned.
60. a structure comprises:
The electroluminescent district;
The injection region, hole;
Electron injection region;
Provide at least one the conducting polymer that electrically contacts in injection region, described hole and the electron injection region.
61. an Organic Light Emitting Diode comprises: substrate, anode construction, electroluminescent district and cathode construction are electrically coupled in described anode region and the cathodic region at least one and undermine the patterned conductive polymer that scratch resistant conducting polymer protective layer covers by wear-resistant.
62. as the structure of claim 57, wherein said electroluminescent district is made of the material of selecting from the group that organic material and inorganic material constitute.
63. diode as claim 57, wherein conducting polymer is from comprising one or more replacements and unsubstituted poly (phenylenevinylene), polyparaphenylene, polyaniline, polythiophene, polyazine, poly-furans, polypyrrole, poly-selenophen, the polyparaphenylene thioether is selected in one group of material of the mixture of the copolymer of polyacetylene and their combination and they and other polymer and monomer whose.
64. as the diode of claim 60, wherein said electroluminescent district is made of the material of selecting from the group that organic material and inorganic material constitute.
65. as the diode of claim 61, wherein said electroluminescent district is made of the material of selecting from the group that organic material and inorganic material constitute.
66. light-emitting diode that constitutes by the patterned conductive polymer.
67., wherein also comprise tin indium oxide as the diode of claim 57.
68. as the diode of claim 57, wherein said anode is a transparent conductor.
69. as the diode of claim 57, wherein said conductor is a tin indium oxide.
70. as the diode of claim 57, wherein said electroluminescent district is made of single organic field luminescence floor.
71. as the diode of claim 57, wherein said electroluminescent district is made of the organic lamination that comprises an electroluminescent layer and an electron transfer layer at least, wherein said thin metal layer directly contacts with electron transfer layer.
72., wherein also comprise transparent substrates as the diode of claim 57.
73. as the diode of claim 72, wherein said substrate is translucent.
74. as the diode of claim 72, wherein said substrate is opaque.
75. as the diode of claim 74, the described material of wherein said substrate is from by glass, selects in the group that plastics and silicon constitute.
76. as the structure of claim 72, wherein said substrate is flexible.
77. array that constitutes by the Organic Light Emitting Diode of an above claim 57.
78., wherein also comprise the single crystalline substrate that has electronic circuit as the array of claim 77.
79. as the array of claim 78, wherein said circuit control is from the light of described array emission.
80. a method comprises:
Substrate with conducting polymer materials layer is provided;
Deposit one deck energy-sensitive material on described conducting polymer materials layer;
Make described resist to the energy graph exposure so that on described energy-sensitive material layer, form figure;
The described figure that will form figure on described layer develops and obtains the exposure region and the unexposed area of described conducting polymer;
Remove the conducting polymer in the described exposure region;
Remove described resist and stay described patterns of electrically conducting polymers on the described substrate.
81. method as claim 80, wherein said conducting polymer is from comprising one or more replacements and unsubstituted poly (phenylenevinylene), polyparaphenylene, polyaniline, polythiophene, polyazine, poly-furans, polypyrrole, poly-selenophen, the polyparaphenylene thioether is selected in one group of material of the mixture of the copolymer of polyacetylene and their combination and they and other polymer and monomer whose.
82. as the method for claim 80, wherein said energy is from electromagnetic radiation, selects in the group that the heat and the particle beams constitute.
83. as the method for claim 80, wherein said development is to finish by the described resist district of removing described energy exposure.
84. as the method for claim 80, wherein said development is to finish by removing the described resist district that described energy is not exposed.
85. as the method for claim 83, wherein said removal is to finish by chemolysis.
86. as the method for claim 84, wherein said removal is to finish by chemolysis.
87. as the method for claim 80, wherein said removal is to finish by reactive ion etching.
88. a method comprises:
Substrate with conducting polymer materials layer is provided;
Figure by the metal mask deposited metal forms graphical metal level on described conductive polymer coating, form the zone and the exposure region that are covered by described metallic pattern of described conducting polymer;
The described exposure region of etching is to remove described exposure region;
Remove described metal.
89. method as claim 88, wherein said conducting polymer is from comprising one or more replacements and unsubstituted poly (phenylenevinylene), polyparaphenylene, polyaniline, polythiophene, polyazine, poly-furans, polypyrrole, poly-selenophen, the polyparaphenylene thioether is selected in one group of material of the mixture of the copolymer of polyacetylene and their combination and they and other polymer and monomer whose.
90. as the method for claim 89, wherein said mask is a molybdenum, and described metal is a platinum.
91. as the method for claim 89, wherein said etching is a reactive ion etching.
92. as the method for claim 89, wherein said exposure region is to utilize acid to remove.
93. a method comprises:
Substrate with conducting polymer materials layer is provided;
On described conductive polymer coating, dispose metal level;
Configuration energy sensitive material on described metal level;
Described energy-sensitive material is exposed to radiating pattern:
The described figure that will form figure on described energy-sensitive material develops and obtains the exposure region and the unexposed area of described metal level;
Remove the described metal level in the described exposure region, obtain the exposure region and the unexposed area of described conducting polymer;
Remove the exposure region of described conducting polymer;
Remove described energy-sensitive material;
Remove the remainder of described metal level.
94. method as claim 93, wherein said conducting polymer is from comprising one or more replacements and unsubstituted poly (phenylenevinylene), polyparaphenylene, polyaniline, polythiophene, polyazine, poly-furans, polypyrrole, poly-selenophen, the polyparaphenylene thioether is selected in one group of material of the mixture of the copolymer of polyacetylene and their combination and they and other polymer and monomer whose.
95. as the method for claim 93, wherein said metal level is to select from the group that Al forms.
96. as the method for claim 93, wherein said radiation is electromagnetic radiation.
97. as the method for claim 93, the described metal level of wherein removing in the described exposure region is to utilize acid etching.
98. as the method for claim 93, the described conducting polymer in the described exposure region of wherein said removal is to utilize reactive ion etching.
99. as the method for claim 93, the remainder of wherein removing described metal level is to utilize the acid etching agent.
100. a method comprises:
Substrate with conducting polymer materials layer is provided;
Described conducting polymer comprises the energy-sensitive agent;
Make described conducting polymer form the unexposed area figure to the energy graph exposure:
Remove the conducting polymer among in described exposure region and the unexposed area and form the figure of the described conducting polymer on the described substrate.
101. method as claim 100, wherein said conducting polymer is from comprising one or more replacements and unsubstituted poly (phenylenevinylene), polyparaphenylene, polyaniline, polythiophene, polyazine, poly-furans, polypyrrole, poly-selenophen, the polyparaphenylene thioether is selected in one group of material of the mixture of the copolymer of polyacetylene and their combination and they and other polymer and monomer whose.
102. as the method for claim 100, wherein said energy is from electromagnetic radiation, selects in the group that the heat and the particle beams constitute.
103. as the method for claim 100, wherein said development is to finish by the described resist district of removing described energy exposure.
104. as the method for claim 100, wherein said development is to finish by removing the described resist district that described energy is not exposed.
105. as the method for claim 103, wherein said removal is to finish by chemolysis.
106. as the method for claim 104, wherein said removal is to finish by chemolysis.
107. as the method for claim 100, wherein said removal is to finish by reactive ion etching.
108. as the method for claim 100, wherein said energy-sensitive agent is the composition of described conducting polymer.
109. as the method for claim 100, wherein said energy-sensitive agent is the additive of described conducting polymer.
110. as the method for claim 108, the formation of wherein said conducting polymer comprises the precursor and the dopant of conducting polymer.
111. as the method for claim 110, wherein said composition is described precursor.
112. as the method for claim 110, wherein said composition is described dopant.
113. a structure comprises:
Ohmic contact between conducting polymer and the semiconductor.
114. as the structure of claim 113, wherein said semiconductor is to select from the group of organic semiconductor and inorganic semiconductor formation.
115. a structure comprises:
The electricity of the low contact resistance between non-polymer conductor and the conducting polymer engages.
116. a method comprises:
Provide to have source area the field-effect transistor of drain region and gate regions;
Form source electrode, drain electrode and gate electrode;
Described source electrode, at least one is by patterns of electrically conducting polymersization is formed in drain electrode and the gate electrode.
117. a method comprises:
Provide to have emitter region the bipolar transistor of base region and collector area;
Form emitter electrode, base electrode and collector electrode;
Described emitter electrode, at least one is by patterns of electrically conducting polymersization is formed in described base electrode and the collector electrode.
118. a structure comprises:
Has emitter region, the bipolar transistor of base region and collector area;
Emitter electrode, base electrode and collector electrode;
Described emitter electrode, at least one is the patterned conductive polymer in described base electrode and the collector electrode.
119. a method comprises:
Provide and have the electroluminescent district, the light-emitting diode in anode region and cathodic region;
Form anode electrode and cathode electrode;
At least one is by patterns of electrically conducting polymersization is formed in described anode electrode and the described cathode electrode.
120. a method comprises:
Provide and have the electroluminescent district, the light-emitting diode in anode region and cathodic region;
Form anode electrode and cathode electrode;
At least one is to be formed by conducting polymer in described anode region and the described cathodic region.
121. as the method for claim 120, at least one is by patterns of electrically conducting polymersization is formed in wherein said anode region and the described cathodic region.
122. a method comprises:
Electronic device with electroactive district is provided;
By making patterns of electrically conducting polymersization form electrically contacting to described electroactive district.
123. a structure comprises:
The surface of non-dielectric material;
Have described lip-deep the 1st surface that is disposed at non-dielectric material and dielectric materials layer with the 2nd surface;
The described layer of described dielectric material has the edge;
Be disposed at described the 2nd surface and cross the conductive polymer coating that described edge arrives the described surface of non-dielectric material.
124. a structure comprises:
Semiconductor layer with the 1st side and the 2nd side;
Dielectric layer in described the 1st side;
The 1st patterned conductive layer on described dielectric layer;
The 2nd patterned conductive layer on described the 2nd side;
The described the 1st, the described the 2nd and described the 3rd patterned conductive layer at least one is a conducting polymer.
125. a field-effect transistor, its formation comprises source electrode, drain electrode and gate electrode, and wherein at least one is the patterned conductive polymer.
126. a structure, its formation comprises:
Insulating barrier with the 1st side and the 2nd side;
Be configured in the grid of described the 1st side of described insulating barrier;
Cross the semiconductor layer that described graphical source electrode and described graphical drain electrode are configured in described the 2nd side;
Be configured in the graphical source electrode of described the 2nd side;
Described graphical grid, at least one is a conducting polymer in described graphical source electrode and the described graphical drain electrode.
127. a structure comprises:
The semiconductor layer of from the group of organic and inorganic semiconductor formation, selecting;
Be disposed at the patterned conductive polymeric layer on the described semiconductor layer.
128. a structure comprises:
Semiconductor layer;
Make the 1st window in the described dielectric layer that semiconductor layer exposes in the 1st district;
Make the 2nd window in the described dielectric layer that semiconductor layer exposes in the 2nd district;
Be configured as the 1st figure that is in the conductor that electrically contacts with described the 1st district;
Be configured as the 2nd figure that is in the conductor that electrically contacts with described the 2nd district;
Be configured in the 3rd figure of the conductor on the dielectric layer between described the 1st figure and the 2nd figure;
At least one is the patterned conductive polymer in the described the 1st, the 2 and the 3rd figure of conductor.
129. a structure comprises:
The electroluminescent district;
The injection region, hole;
Electron injection region;
The anode contact;
The negative electrode contact;
At least one is a conducting polymer in injection region, described hole and the described electron injection region.
130. one kind has gate electrode, the field-effect transistor of source electrode and drain electrode, and wherein at least one is the patterned conductive polymer.
131. one kind has emitter electrode, the bipolar transistor of base electrode and collector electrode, and wherein at least one is the patterned conductive polymer.
Applications Claiming Priority (16)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US3050196P | 1996-11-12 | 1996-11-12 | |
| US60/030,501 | 1996-11-12 | ||
| US4033597P | 1997-03-07 | 1997-03-07 | |
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| US60/040,159 | 1997-03-07 | ||
| US60/040,628 | 1997-03-07 |
Publications (2)
| Publication Number | Publication Date |
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| CN1240537A true CN1240537A (en) | 2000-01-05 |
| CN1170321C CN1170321C (en) | 2004-10-06 |
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ID=27574171
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB971805717A Expired - Lifetime CN1170321C (en) | 1996-11-12 | 1997-11-10 | Patterns of electrically conducting polymers and their application as electrodes or electrical contacts |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP0953213A2 (en) |
| JP (1) | JP2000505249A (en) |
| KR (1) | KR100304402B1 (en) |
| CN (1) | CN1170321C (en) |
| SG (1) | SG121693A1 (en) |
| WO (1) | WO1998021755A2 (en) |
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| JPS5848940A (en) * | 1981-09-18 | 1983-03-23 | Fujitsu Ltd | Semiconductor device |
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| JPS63177443A (en) * | 1987-01-16 | 1988-07-21 | Seiko Epson Corp | Interconnection in semiconductor device |
| JPH07273110A (en) * | 1994-03-30 | 1995-10-20 | Kawasaki Steel Corp | Wiring method |
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1997
- 1997-11-10 KR KR1019980705329A patent/KR100304402B1/en not_active IP Right Cessation
- 1997-11-10 EP EP97949443A patent/EP0953213A2/en not_active Withdrawn
- 1997-11-10 SG SG200104767A patent/SG121693A1/en unknown
- 1997-11-10 JP JP10522863A patent/JP2000505249A/en not_active Abandoned
- 1997-11-10 CN CNB971805717A patent/CN1170321C/en not_active Expired - Lifetime
- 1997-11-10 WO PCT/US1997/020862 patent/WO1998021755A2/en active Application Filing
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| CN113355107A (en) * | 2021-07-05 | 2021-09-07 | 合肥中聚合臣电子材料有限公司 | Liquid crystal orientation agent |
Also Published As
| Publication number | Publication date |
|---|---|
| KR19990077188A (en) | 1999-10-25 |
| SG121693A1 (en) | 2006-05-26 |
| WO1998021755A3 (en) | 1998-10-08 |
| WO1998021755A2 (en) | 1998-05-22 |
| JP2000505249A (en) | 2000-04-25 |
| CN1170321C (en) | 2004-10-06 |
| KR100304402B1 (en) | 2002-03-08 |
| EP0953213A2 (en) | 1999-11-03 |
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