JPH07273110A - Wiring method - Google Patents
Wiring methodInfo
- Publication number
- JPH07273110A JPH07273110A JP6158294A JP6158294A JPH07273110A JP H07273110 A JPH07273110 A JP H07273110A JP 6158294 A JP6158294 A JP 6158294A JP 6158294 A JP6158294 A JP 6158294A JP H07273110 A JPH07273110 A JP H07273110A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- resist
- temporary
- film
- inspection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体デバイスの一時
的な配線の方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for temporarily wiring semiconductor devices.
【０００２】[0002]
【従来の技術】従来の半導体デバイスの配線は、金属、
例えば、Ａｌ、Ａｌ合金、Ｗ等の金属をスパッタリング
又はＣＶＤ法によって形成している。金属配線は、一度
配線すると全面的な変更は困難であり、取り外しができ
ない。これは酸化膜を痛め、下地にダメージを与えるか
らである。また、Ａｌ中にＳｉが進入してノジュールを
形成する。取り去りを繰り返すとノジュールが大きくな
る。このような事情から、金属配線は、部分的には取り
去ることが可能であっても、全体的に繰り返し着脱する
ことは困難である。2. Description of the Related Art Conventional semiconductor device wiring is made of metal,
For example, metals such as Al, Al alloys, and W are formed by sputtering or CVD. Once the metal wiring is wired, it is difficult to completely change it and it cannot be removed. This is because the oxide film is damaged and the base is damaged. Further, Si penetrates into Al to form nodules. The nodules grow larger when they are repeatedly removed. Under such circumstances, the metal wiring can be partially removed, but it is difficult to repeatedly attach and detach the metal wiring as a whole.
【０００３】一方、半導体デバイスでは、ある部分のデ
バイスの調査、一時的に必要な動作確認、臨時のテスト
等の必要な場合があり、プローブでは、段差等の関係で
測定が十分でない場合等がある。このような場合に、臨
時の繰り返し形成、除去可能な仮配線が望まれている。On the other hand, in the case of a semiconductor device, there are cases where it is necessary to investigate a certain part of the device, temporarily confirm the required operation, and perform a temporary test, and in the case of a probe, the measurement may not be sufficient due to a step or the like. is there. In such a case, temporary wiring that can be repeatedly formed and removed temporarily is desired.
【０００４】[0004]
【発明が解決しようとする課題】本発明はこのような繰
り返し形成、除去が可能な条件下において用いる半導体
デバイスの配線方法を提供することを目的とする。SUMMARY OF THE INVENTION It is an object of the present invention to provide a wiring method for a semiconductor device which is used under such a condition that it can be repeatedly formed and removed.
【０００５】[0005]
【課題を解決するための手段】本発明は、上記問題点を
解決するために、次の技術手段を講じたことを特徴とす
る。すなわち、有機溶媒に可溶な導電性有機化合物を蒸
着又は溶液の塗布により半導体素子の配線を形成するこ
とを特徴とする配線方法を提供する。この場合、前記配
線は仮配線であったり、テスト配線として用いると好適
である。The present invention is characterized by taking the following technical means in order to solve the above problems. That is, there is provided a wiring method characterized by forming a wiring of a semiconductor element by vapor deposition of a conductive organic compound soluble in an organic solvent or application of a solution. In this case, it is preferable that the wiring is a temporary wiring or used as a test wiring.
【０００６】[0006]
【作用】π電子をもつ有機物は結晶性、導電性があるこ
とが知られている。例えばポリアセチレン、ポリピロー
ル、ポリメチルピロール、ポリフラン、ポリチオフェン
等に例えばＣｌＯ4 、ＢＦ3 などのドーパントを入れた
ものは導電性がある。これらの材料は有機溶媒に可溶で
ある。これらの導電性有機物を配線材料として用い、レ
ジストとの溶媒に対する溶解度の差を利用して半導体装
置に配線を行うことができる。そしてこの配線は配線施
工、除去が可能である。Function: It is known that organic substances having π electrons have crystallinity and conductivity. For example, polyacetylene, polypyrrole, polymethylpyrrole, polyfuran, polythiophene, and the like, into which a dopant such as ClO 4 or BF 3 is added, are conductive. These materials are soluble in organic solvents. Wiring can be performed in the semiconductor device by using these conductive organic substances as a wiring material and utilizing the difference in solubility between the resist and the solvent. The wiring can be installed and removed.
【０００７】これらの導電性有機物は導電率が１０2 〜
１０4 程度であり、導電性能は、金属配線には到底及ば
ないし、また耐久性に欠けるので、永久配線とすること
はできないが、どのようなところにでも繰り返し容易に
使用することができるので、臨時の配線として有用であ
り、テスト、調査、調整、その他、リワーク及び仮配線
として好適である。These conductive organic substances have a conductivity of 10 2 to
Since it has a conductivity of about 10 4 and is not as good as metal wiring, and lacks durability, it cannot be used as a permanent wiring, but since it can be repeatedly used easily anywhere, It is useful as a temporary wiring, and is suitable for testing, investigation, adjustment, rework, and temporary wiring.
【０００８】配線形成方法としては加熱真空を用いる真
空蒸着方法、溶液の塗布による塗布方法を用いることが
できる。例えば、ポリアセチレンは融けにくく、スピン
コートすることができないので、真空蒸着する。溶媒と
してクロロフォルムを用いる。トルエンには溶解しな
い。一般にはレジストはトルエン、ベンゼン、ケトンに
溶解するが、クロロフォルムには溶解しないので、その
差を利用してパターニングすることができる。As the wiring forming method, a vacuum vapor deposition method using heating vacuum or a coating method by coating a solution can be used. For example, polyacetylene is difficult to melt and cannot be spin-coated, so it is vacuum-deposited. Chloroform is used as the solvent. It does not dissolve in toluene. Generally, the resist is soluble in toluene, benzene, and ketone, but is insoluble in chloroform, and therefore the patterning can be performed by utilizing the difference.
【０００９】[0009]
【実施例】図１は本発明の実施例の配線方法を示す模式
図である。 （ａ）導電性有機物配線材として下記に示す５，１０，
１５，２０−テトラフェニルポルフィリン誘導体を用
い、膜２を真空蒸着により基板１上に形成する。この誘
導体は融けにくく、スピンコートすることができないの
で、真空蒸着する。 （ｂ）膜２の上に、レジスト３として、ポリオキソタン
グステイソポリ酸（１２ＷＯ3 ・７Ｈ2 Ｏ2 ・ｎＨ2
Ｏ）の水溶液を塗布し、露光し、Ｈ2 Ｏにより非感光部
を除去し、配線のパターニングを行う。 （ｃ）レジスト３が溶解しない有機溶媒を用いて、膜２
のエッチングを行う。このような有機溶媒として、例え
ば、アセトン、トルエン、クロロフォルムを用いること
ができる。 （ｄ）レジスト３をアルカリ水溶液、例えばＮＨ3 水溶
液で除去する。テトラフェニルポルフィリン誘導体はア
ルカリには難溶で、配線４が残っている。この配線４を
用いて、一時的な検査を行う。 （ｅ）検査後、配線４は不要となるので、配線材除去
材、例えば、クロロフォルムで除去する。 （ｆ）基板１は仮配線、テスト配線である配線４をすぐ
に撤去することができる。配線４を撤去すると、上記
（ａ）の状態に戻るので、繰り返し適宜の臨時配線を行
うことができる。FIG. 1 is a schematic diagram showing a wiring method according to an embodiment of the present invention. (A) 5, 10 shown below as a conductive organic wiring material
The film 2 is formed on the substrate 1 by vacuum vapor deposition using a 15,20-tetraphenylporphyrin derivative. Since this derivative does not melt easily and cannot be spin-coated, it is vacuum-deposited. (B) on the film 2, the resist 3, polyoxometalate tongue Stay Seo polyacid (12WO 3 · 7H 2 O 2 · nH 2
The aqueous solution of (O) is applied, exposed to light, the non-photosensitive portion is removed with H 2 O, and the wiring is patterned. (C) The film 2 is formed by using an organic solvent that does not dissolve the resist 3.
Etching is performed. As such an organic solvent, for example, acetone, toluene, or chloroform can be used. (D) The resist 3 is removed with an alkaline aqueous solution, for example, NH 3 aqueous solution. The tetraphenylporphyrin derivative is hardly soluble in alkali, and the wiring 4 remains. A temporary inspection is performed using this wiring 4. (E) After the inspection, the wiring 4 is no longer necessary, so the wiring 4 is removed with a wiring material removing material, for example, chloroform. (F) In the substrate 1, the temporary wiring and the wiring 4 which is the test wiring can be immediately removed. When the wiring 4 is removed, the state of (a) above is restored, so that appropriate temporary wiring can be repeatedly performed.
【００１０】[0010]
【化１】 [Chemical 1]
【００１１】[0011]
【発明の効果】本発明の配線方法は、以上のように構成
されているので、下地にダメージを与えることなく、容
易に形成、除去ができる。従って、半導体装置の臨時の
配線として、テスト、調整等に寄与するところが大き
い。Since the wiring method of the present invention is constructed as described above, it can be easily formed and removed without damaging the base. Therefore, the temporary wiring of the semiconductor device largely contributes to testing, adjustment, and the like.
【図１】本発明の実施例の配線方法を示す模式的工程図
である。FIG. 1 is a schematic process diagram showing a wiring method according to an example of the present invention.
１ 基板 ２ ポリアセチレン膜 ３ レジスト ４ 配線 1 substrate 2 polyacetylene film 3 resist 4 wiring
Claims (3)
着し又は塗布し、半導体素子の配線を形成することを特
徴とする配線方法。1. A wiring method comprising forming a wiring of a semiconductor element by vapor-depositing or coating a conductive organic compound soluble in an organic solvent.
る請求項１記載の配線方法。2. The wiring method according to claim 1, wherein the wiring is a temporary wiring.
とする請求項１記載の配線方法。3. The wiring method according to claim 1, wherein the wiring is a test wiring.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6158294A JPH07273110A (en) | 1994-03-30 | 1994-03-30 | Wiring method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6158294A JPH07273110A (en) | 1994-03-30 | 1994-03-30 | Wiring method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07273110A true JPH07273110A (en) | 1995-10-20 |
Family
ID=13175282
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6158294A Withdrawn JPH07273110A (en) | 1994-03-30 | 1994-03-30 | Wiring method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07273110A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998021755A3 (en) * | 1996-11-12 | 1998-10-08 | Ibm | Patterns of electrically conducting polymers and their application as electrodes or electrical contacts |
| US6331356B1 (en) | 1989-05-26 | 2001-12-18 | International Business Machines Corporation | Patterns of electrically conducting polymers and their application as electrodes or electrical contacts |
-
1994
- 1994-03-30 JP JP6158294A patent/JPH07273110A/en not_active Withdrawn
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6331356B1 (en) | 1989-05-26 | 2001-12-18 | International Business Machines Corporation | Patterns of electrically conducting polymers and their application as electrodes or electrical contacts |
| US7095474B2 (en) | 1989-05-26 | 2006-08-22 | International Business Machines Corporation | Patterns of electrically conducting polymers and their application as electrodes or electrical contacts |
| WO1998021755A3 (en) * | 1996-11-12 | 1998-10-08 | Ibm | Patterns of electrically conducting polymers and their application as electrodes or electrical contacts |
| KR100304402B1 (en) * | 1996-11-12 | 2002-03-08 | 포만 제프리 엘 | Patterns of electrically conducting polymers and their application as electrodes or electrical contacts |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20010605 |