CN1232159C - 常压等离子体产生器 - Google Patents
常压等离子体产生器 Download PDFInfo
- Publication number
- CN1232159C CN1232159C CNB031383645A CN03138364A CN1232159C CN 1232159 C CN1232159 C CN 1232159C CN B031383645 A CNB031383645 A CN B031383645A CN 03138364 A CN03138364 A CN 03138364A CN 1232159 C CN1232159 C CN 1232159C
- Authority
- CN
- China
- Prior art keywords
- anode
- plasma generator
- negative electrode
- plasma
- atmospheric plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000009832 plasma treatment Methods 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 abstract description 15
- 230000003068 static effect Effects 0.000 abstract description 9
- 238000009825 accumulation Methods 0.000 abstract description 8
- 239000007789 gas Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 4
- 239000003344 environmental pollutant Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 231100000719 pollutant Toxicity 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Cleaning In General (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (2)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR200234880 | 2002-06-21 | ||
KR10-2002-0034880A KR100489624B1 (ko) | 2002-06-21 | 2002-06-21 | 상압 플라즈마 발생 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1468044A CN1468044A (zh) | 2004-01-14 |
CN1232159C true CN1232159C (zh) | 2005-12-14 |
Family
ID=29997368
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB031383645A Expired - Lifetime CN1232159C (zh) | 2002-06-21 | 2003-05-28 | 常压等离子体产生器 |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR100489624B1 (zh) |
CN (1) | CN1232159C (zh) |
TW (1) | TWI286048B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100828590B1 (ko) * | 2006-11-01 | 2008-05-09 | 주식회사 에이피아이 | 대기압 플라즈마 발생장치 |
KR100905257B1 (ko) * | 2007-08-31 | 2009-06-29 | 세메스 주식회사 | 전위 제어 방법, 이를 적용한 전위 제어 유닛 및 기판 처리장치 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2774367B2 (ja) * | 1990-08-07 | 1998-07-09 | 忠弘 大見 | プラズマプロセス用装置および方法 |
JPH04290226A (ja) * | 1991-03-19 | 1992-10-14 | Matsushita Electric Ind Co Ltd | プラズマ発生方法及びその装置 |
KR100302167B1 (ko) * | 1993-11-05 | 2001-11-22 | 히가시 데쓰로 | 플라즈마처리장치및플라즈마처리방법 |
JP3630982B2 (ja) * | 1997-05-22 | 2005-03-23 | キヤノン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
-
2002
- 2002-06-21 KR KR10-2002-0034880A patent/KR100489624B1/ko active IP Right Grant
-
2003
- 2003-05-08 TW TW092112540A patent/TWI286048B/zh not_active IP Right Cessation
- 2003-05-28 CN CNB031383645A patent/CN1232159C/zh not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
TWI286048B (en) | 2007-08-21 |
KR20030097488A (ko) | 2003-12-31 |
TW200400781A (en) | 2004-01-01 |
CN1468044A (zh) | 2004-01-14 |
KR100489624B1 (ko) | 2005-05-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CI01 | Publication of corrected invention patent application |
Correction item: Inventor Correct: Pu Yongshuo False: Lin Yongshuo Number: 50 Page: 761 Volume: 21 |
|
CI03 | Correction of invention patent |
Correction item: Inventor Correct: Pu Yongshuo False: Lin Yongshuo Number: 50 Page: The title page Volume: 21 |
|
COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: LIN YONGSHUO TO: PARK YONG-SEOK |
|
ERR | Gazette correction |
Free format text: CORRECT: INVENTOR; FROM: LIN YONGSHUO TO: PARK YONG-SEOK |
|
ASS | Succession or assignment of patent right |
Owner name: WEIHAI DIANMEISHI OPTO-MECHATRONICS CO., LTD. Effective date: 20140227 |
|
TR01 | Transfer of patent right |
Effective date of registration: 20140227 Address after: Gyeonggi Do Lingtong paldal Gu Dong 1009-1 fan dust Tian Tian Bldg.8 layer Patentee after: Display Manufacturing Service Co.,Ltd. Patentee after: WEIHAI DMS OPTICAL ELECTROMECHANICAL CO.,LTD. Address before: Gyeonggi Do Korea Suwon Patentee before: Display Manufacturing Service Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
CP03 | Change of name, title or address |
Address after: 264205 No. 88-1, Bekaert Road, Weihai Economic and Technological Development Zone, Weihai City, Shandong Province Patentee after: WEIHAI DMS OPTICAL ELECTROMECHANICAL Co.,Ltd. Patentee after: Display Manufacturing Service Co.,Ltd. Address before: Bldg.8, Fandi aitian, 1009-1 lingtongdong, Bada District, Shuiyuan City, Gyeonggi Province Patentee before: Display Manufacturing Service Co.,Ltd. Patentee before: WEIHAI DMS OPTICAL ELECTROMECHANICAL Co.,Ltd. |
|
CP03 | Change of name, title or address | ||
CX01 | Expiry of patent term |
Granted publication date: 20051214 |
|
CX01 | Expiry of patent term |