CN1228608A - 用于腐蚀的保护单元 - Google Patents
用于腐蚀的保护单元 Download PDFInfo
- Publication number
- CN1228608A CN1228608A CN99103644A CN99103644A CN1228608A CN 1228608 A CN1228608 A CN 1228608A CN 99103644 A CN99103644 A CN 99103644A CN 99103644 A CN99103644 A CN 99103644A CN 1228608 A CN1228608 A CN 1228608A
- Authority
- CN
- China
- Prior art keywords
- protected location
- area
- corrosion
- basically
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 62
- 239000000463 material Substances 0.000 claims abstract description 57
- 238000005260 corrosion Methods 0.000 claims description 43
- 230000007797 corrosion Effects 0.000 claims description 43
- 239000000758 substrate Substances 0.000 claims description 31
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 239000003989 dielectric material Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- 230000003139 buffering effect Effects 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 description 22
- 230000015572 biosynthetic process Effects 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 208000005189 Embolism Diseases 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000011859 microparticle Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 206010034719 Personality change Diseases 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 208000015181 infectious disease Diseases 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Fuses (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (30)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/037,288 | 1998-03-09 | ||
US09/037288 | 1998-03-09 | ||
US09/037,288 US6060398A (en) | 1998-03-09 | 1998-03-09 | Guard cell for etching |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1228608A true CN1228608A (zh) | 1999-09-15 |
CN1155051C CN1155051C (zh) | 2004-06-23 |
Family
ID=21893529
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB991036441A Expired - Fee Related CN1155051C (zh) | 1998-03-09 | 1999-03-09 | 用于腐蚀的保护单元的方法和装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6060398A (zh) |
EP (1) | EP0942462B1 (zh) |
JP (1) | JPH11317394A (zh) |
KR (1) | KR100581454B1 (zh) |
CN (1) | CN1155051C (zh) |
DE (1) | DE69932664T2 (zh) |
TW (1) | TW419748B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103117269A (zh) * | 2011-11-16 | 2013-05-22 | 北大方正集团有限公司 | 一种熔丝组件、熔丝组件制造方法及设备 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5976917A (en) | 1998-01-29 | 1999-11-02 | Micron Technology, Inc. | Integrated circuitry fuse forming methods, integrated circuitry programming methods, and related integrated circuitry |
US6274440B1 (en) * | 1999-03-31 | 2001-08-14 | International Business Machines Corporation | Manufacturing of cavity fuses on gate conductor level |
US6562674B1 (en) * | 1999-07-06 | 2003-05-13 | Matsushita Electronics Corporation | Semiconductor integrated circuit device and method of producing the same |
US6887391B1 (en) * | 2000-03-24 | 2005-05-03 | Analog Devices, Inc. | Fabrication and controlled release of structures using etch-stop trenches |
US6602791B2 (en) * | 2001-04-27 | 2003-08-05 | Dalsa Semiconductor Inc. | Manufacture of integrated fluidic devices |
US6583031B2 (en) | 2001-07-25 | 2003-06-24 | Onix Microsystems, Inc. | Method of making a MEMS element having perpendicular portion formed from substrate |
US6872648B2 (en) * | 2002-09-19 | 2005-03-29 | Infineon Technologies Ag | Reduced splattering of unpassivated laser fuses |
US7557424B2 (en) * | 2007-01-03 | 2009-07-07 | International Business Machines Corporation | Reversible electric fuse and antifuse structures for semiconductor devices |
RU2537488C2 (ru) * | 2012-08-22 | 2015-01-10 | Закрытое акционерное общество "Инструменты нанотехнологии" | Устройство травления поверхности для металлографического анализа |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2634059B1 (fr) * | 1988-07-08 | 1996-04-12 | Thomson Csf | Microcomposant electronique autoscelle sous vide, notamment diode, ou triode, et procede de fabrication correspondant |
JP2695548B2 (ja) * | 1991-09-04 | 1997-12-24 | 富士通株式会社 | 半導体装置 |
SE9304145D0 (sv) * | 1993-12-10 | 1993-12-10 | Pharmacia Lkb Biotech | Sätt att tillverka hålrumsstrukturer |
US5420455A (en) * | 1994-03-31 | 1995-05-30 | International Business Machines Corp. | Array fuse damage protection devices and fabrication method |
US5587613A (en) * | 1994-05-25 | 1996-12-24 | Crosspoint Solutions, Inc. | Low-capacitance, isotropically etched antifuse and method of manufacture therefor |
US5698112A (en) * | 1994-11-24 | 1997-12-16 | Siemens Aktiengesellschaft | Corrosion protection for micromechanical metal layers |
US5538924A (en) * | 1995-09-05 | 1996-07-23 | Vanguard International Semiconductor Co. | Method of forming a moisture guard ring for integrated circuit applications |
DE19638666C1 (de) * | 1996-01-08 | 1997-11-20 | Siemens Ag | Schmelzsicherung mit einer Schutzschicht in einer integrierten Halbleiterschaltung sowie zugehöriges Herstellungsverfahren |
KR19980015544A (ko) * | 1996-08-22 | 1998-05-25 | 김광호 | 리페어회로 및 그 제조방법 |
US5773361A (en) * | 1996-11-06 | 1998-06-30 | International Business Machines Corporation | Process of making a microcavity structure and applications thereof |
JP3301334B2 (ja) * | 1997-01-31 | 2002-07-15 | 三菱電機株式会社 | センサ素子及びその製造方法 |
US5899736A (en) * | 1997-09-19 | 1999-05-04 | Siemens Aktiengesellschaft | Techniques for forming electrically blowable fuses on an integrated circuit |
-
1998
- 1998-03-09 US US09/037,288 patent/US6060398A/en not_active Expired - Lifetime
-
1999
- 1999-02-25 TW TW088102858A patent/TW419748B/zh not_active IP Right Cessation
- 1999-02-27 EP EP99103818A patent/EP0942462B1/en not_active Expired - Lifetime
- 1999-02-27 DE DE69932664T patent/DE69932664T2/de not_active Expired - Lifetime
- 1999-03-09 KR KR1019990007658A patent/KR100581454B1/ko not_active IP Right Cessation
- 1999-03-09 JP JP11061798A patent/JPH11317394A/ja active Pending
- 1999-03-09 CN CNB991036441A patent/CN1155051C/zh not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103117269A (zh) * | 2011-11-16 | 2013-05-22 | 北大方正集团有限公司 | 一种熔丝组件、熔丝组件制造方法及设备 |
CN103117269B (zh) * | 2011-11-16 | 2015-07-15 | 北大方正集团有限公司 | 一种熔丝组件、熔丝组件制造方法及设备 |
Also Published As
Publication number | Publication date |
---|---|
EP0942462A3 (en) | 2000-07-05 |
EP0942462B1 (en) | 2006-08-09 |
DE69932664D1 (de) | 2006-09-21 |
KR100581454B1 (ko) | 2006-05-24 |
DE69932664T2 (de) | 2007-08-09 |
JPH11317394A (ja) | 1999-11-16 |
KR19990077699A (ko) | 1999-10-25 |
TW419748B (en) | 2001-01-21 |
US6060398A (en) | 2000-05-09 |
CN1155051C (zh) | 2004-06-23 |
EP0942462A2 (en) | 1999-09-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: INFINEON TECHNOLOGIES AG Free format text: FORMER OWNER: SIEMENS AG Effective date: 20120213 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20120213 Address after: Federal Republic of Germany City, Laura Ibiza Berger Patentee after: Infineon Technologies AG Address before: Munich, Germany Patentee before: Siemens AG |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20040623 Termination date: 20160309 |
|
CF01 | Termination of patent right due to non-payment of annual fee |