CN1216393C - 场发射型电子源阵列及其制造方法与用途 - Google Patents

场发射型电子源阵列及其制造方法与用途 Download PDF

Info

Publication number
CN1216393C
CN1216393C CN998019259A CN99801925A CN1216393C CN 1216393 C CN1216393 C CN 1216393C CN 998019259 A CN998019259 A CN 998019259A CN 99801925 A CN99801925 A CN 99801925A CN 1216393 C CN1216393 C CN 1216393C
Authority
CN
China
Prior art keywords
layer
field emission
emission source
electrode
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN998019259A
Other languages
English (en)
Chinese (zh)
Other versions
CN1287678A (zh
Inventor
幡井崇
菰田卓哉
本多由明
相泽浩一
渡部祥文
栎原勉
近藤行广
冈直正
越田信义
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP36397098A external-priority patent/JP3084272B2/ja
Priority claimed from JP36396598A external-priority patent/JP2000188057A/ja
Priority claimed from JP14673999A external-priority patent/JP3076561B1/ja
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Publication of CN1287678A publication Critical patent/CN1287678A/zh
Application granted granted Critical
Publication of CN1216393C publication Critical patent/CN1216393C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/312—Cold cathodes, e.g. field-emissive cathode having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of metal-insulator-metal [MIM] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H01J31/123—Flat display tubes
    • H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
    • H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/312—Cold cathodes having an electric field perpendicular to the surface thereof
    • H01J2201/3125—Metal-insulator-Metal [MIM] emission type cathodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
CN998019259A 1998-08-26 1999-08-26 场发射型电子源阵列及其制造方法与用途 Expired - Fee Related CN1216393C (zh)

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
JP23960698 1998-08-26
JP239606/1998 1998-08-26
JP27233498 1998-09-25
JP272334/1998 1998-09-25
JP363965/1998 1998-12-22
JP363970/1998 1998-12-22
JP36397098A JP3084272B2 (ja) 1998-12-22 1998-12-22 電界放射型電子源
JP36396598A JP2000188057A (ja) 1998-12-22 1998-12-22 電子源
JP146739/1999 1999-05-26
JP14673999A JP3076561B1 (ja) 1999-05-26 1999-05-26 電界放射型電子源およびその製造方法

Publications (2)

Publication Number Publication Date
CN1287678A CN1287678A (zh) 2001-03-14
CN1216393C true CN1216393C (zh) 2005-08-24

Family

ID=27527774

Family Applications (1)

Application Number Title Priority Date Filing Date
CN998019259A Expired - Fee Related CN1216393C (zh) 1998-08-26 1999-08-26 场发射型电子源阵列及其制造方法与用途

Country Status (9)

Country Link
US (1) US6794805B1 (de)
EP (1) EP1026721B1 (de)
KR (1) KR100366805B1 (de)
CN (1) CN1216393C (de)
AT (1) ATE517427T1 (de)
DK (1) DK1026721T3 (de)
ES (1) ES2372168T3 (de)
TW (1) TW442813B (de)
WO (1) WO2000013197A1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE261611T1 (de) * 1994-09-22 2004-03-15 Canon Kk Verfahren zur herstellung einer elektronen- emittierenden einrichtung sowie einer elektronenquelle und eines bilderzeugungsgerätes mit derartigen elektronen-emittierenden einrichtungen
GB0025634D0 (en) * 2000-10-18 2000-12-06 Smiths Industries Plc Light-emitting devices and displays
TWI286773B (en) * 2000-10-26 2007-09-11 Matsushita Electric Works Ltd Field emission type electron source
JP3687522B2 (ja) * 2000-10-26 2005-08-24 松下電工株式会社 電界放射型電子源
US6771010B2 (en) 2001-04-30 2004-08-03 Hewlett-Packard Development Company, L.P. Silicon emitter with low porosity heavily doped contact layer
US20060012304A1 (en) * 2004-07-13 2006-01-19 Seung-Hyun Son Plasma display panel and flat lamp using oxidized porous silicon
KR100670351B1 (ko) * 2005-08-24 2007-01-16 삼성에스디아이 주식회사 플라즈마 디스플레이 패널
KR100659099B1 (ko) * 2005-10-11 2006-12-19 삼성에스디아이 주식회사 표시 장치
KR100659100B1 (ko) * 2005-10-12 2006-12-21 삼성에스디아이 주식회사 디스플레이 장치와 이의 제조 방법
JP2007294126A (ja) * 2006-04-21 2007-11-08 Canon Inc 電子放出素子、電子源、画像表示装置、及び、電子放出素子の製造方法
JP2007311329A (ja) 2006-05-19 2007-11-29 Samsung Sdi Co Ltd 発光装置、発光装置の電子放出ユニット製造方法、及び表示装置
CN101609778B (zh) * 2009-07-20 2011-11-09 浙江师范大学 多孔硅场发射发光二极管阵列及其制作技术
US8642371B2 (en) * 2011-04-06 2014-02-04 Shamsoddin Mohajerzadeh Method and system for fabricating ion-selective field-effect transistor (ISFET)
CN102360999A (zh) * 2011-11-08 2012-02-22 福州大学 柔性可控有机pn结场发射电子源
US10032870B2 (en) * 2015-03-12 2018-07-24 Globalfoundries Inc. Low defect III-V semiconductor template on porous silicon
CN109285740B (zh) * 2018-11-12 2024-02-09 北京大学 一种片上微型电子源及其制造方法
DE102020113351A1 (de) * 2020-05-18 2021-11-18 Dbt Gmbh Elektronenemitterstruktur, Äußerer-Photoeffekt-Emitter, Partikelsammelvorrichtung Tunnel- Flächenemitter halbleiterbasierter Direktemitter, und Flüssigkeitsionisator mit derselben, Verfahren zum Erzeugen von freien Elektronen und Verfahren zum Sammeln von Partikeln

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05342995A (ja) * 1992-06-08 1993-12-24 Olympus Optical Co Ltd Ｍｉｓ型冷陰極電子放出装置
JPH06140502A (ja) 1992-10-26 1994-05-20 Nec Corp 半導体装置の製造方法
JP3214256B2 (ja) 1994-10-12 2001-10-02 松下電器産業株式会社 電子パルス放出装置および表示装置
JPH0992130A (ja) 1995-09-25 1997-04-04 Olympus Optical Co Ltd 電荷発生器及びその製造方法
JP3281533B2 (ja) 1996-03-26 2002-05-13 パイオニア株式会社 冷電子放出表示装置及び半導体冷電子放出素子
TW391022B (en) * 1997-10-29 2000-05-21 Mitsubishi Rayon Co Field emission electron source, method of producing the same, and use of the same
KR100338140B1 (ko) 1998-09-25 2002-05-24 이마이 기요스케 전계 방사형 전자원
TW436837B (en) 1998-11-16 2001-05-28 Matsushita Electric Works Ltd Field emission-type electron source and manufacturing method thereof and display using the electron source
TW472273B (en) 1999-04-23 2002-01-11 Matsushita Electric Works Ltd Field emission-type electron source and manufacturing method thereof
SG90182A1 (en) 1999-10-18 2002-07-23 Matsushita Electric Works Ltd Field emission-type electron source and manufacturing method thereof

Also Published As

Publication number Publication date
TW442813B (en) 2001-06-23
ES2372168T3 (es) 2012-01-16
EP1026721A4 (de) 2006-12-06
EP1026721B1 (de) 2011-07-20
ATE517427T1 (de) 2011-08-15
WO2000013197A1 (fr) 2000-03-09
CN1287678A (zh) 2001-03-14
EP1026721A1 (de) 2000-08-09
DK1026721T3 (da) 2011-10-10
KR100366805B1 (ko) 2003-01-09
KR20010031414A (ko) 2001-04-16
US6794805B1 (en) 2004-09-21

Similar Documents

Publication Publication Date Title
CN1216393C (zh) 场发射型电子源阵列及其制造方法与用途
CN1917219A (zh) 源极/漏极电极、薄膜晶体管衬底及其制备方法和显示器件
CN1203597C (zh) 氮基半导体激光器件和其生产方法
CN1248547C (zh) 有机电致发光显示装置及其制造方法
CN1286156C (zh) 制造半导体器件的方法
CN1148774C (zh) 场致发射型电子源及其制造方法
CN1957447A (zh) Ⅲ族氮化物半导体晶体及其制造方法、ⅲ族氮化物半导体器件及其制造方法以及发光器件
CN1254173A (zh) 场致发射型电子源及其制造方法以及用该电子源的显示器
CN1409373A (zh) 剥离方法及半导体器件的制造方法
CN1152187A (zh) 半导体基片及其制造方法
CN1361921A (zh) 图像显示装置和图像显示装置的制造方法
CN1397984A (zh) 半导体器件及剥离方法以及半导体器件的制造方法
CN1624944A (zh) 发光装置
CN1227405A (zh) 阳极氧化方法和装置以及半导体衬底制造方法
CN1428817A (zh) 膜形成装置和膜形成方法以及清洁方法
CN1516211A (zh) 场致发射器件及其制造方法
CN1360350A (zh) 发光设备及其制造方法
CN1309407A (zh) 电子发射器件、冷阴极场发射器件和显示器及其制造方法
CN1828885A (zh) 晶体管阵列和有源矩阵基板
CN1555082A (zh) 激光装置、激光辐射方法及半导体器件及其制造方法
CN1138747A (zh) 半导体腐蚀方法及用该腐蚀方法制造半导体器件的方法
CN101064496A (zh) 半导体器件
CN1691277A (zh) 用于制造半导体器件的方法
CN1574155A (zh) 具有偶极子层的电子发射器件、电子源和图像显示器
CN1508840A (zh) 介质分离型半导体装置及其制造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20050824

Termination date: 20150826

EXPY Termination of patent right or utility model