CN1215546C - 等离子体处理系统中腐蚀终点的确定方法和确定装置 - Google Patents

等离子体处理系统中腐蚀终点的确定方法和确定装置 Download PDF

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Publication number
CN1215546C
CN1215546C CNB998116130A CN99811613A CN1215546C CN 1215546 C CN1215546 C CN 1215546C CN B998116130 A CNB998116130 A CN B998116130A CN 99811613 A CN99811613 A CN 99811613A CN 1215546 C CN1215546 C CN 1215546C
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China
Prior art keywords
monitoring circuit
signal
utmost point
terminal point
endpoint
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CNB998116130A
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English (en)
Chinese (zh)
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CN1439173A (zh
Inventor
加罗斯洛·W·温尼泽克
M·J·弗朗西斯·查德拉塞卡·达萨帕
埃里克·A·赫德森
马克·维普金
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Lam Research Corp
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Lam Research Corp
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Publication of CN1439173A publication Critical patent/CN1439173A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CNB998116130A 1998-09-30 1999-09-15 等离子体处理系统中腐蚀终点的确定方法和确定装置 Expired - Fee Related CN1215546C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/164,389 1998-09-30
US09/164,389 US6228278B1 (en) 1998-09-30 1998-09-30 Methods and apparatus for determining an etch endpoint in a plasma processing system

Publications (2)

Publication Number Publication Date
CN1439173A CN1439173A (zh) 2003-08-27
CN1215546C true CN1215546C (zh) 2005-08-17

Family

ID=22594268

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB998116130A Expired - Fee Related CN1215546C (zh) 1998-09-30 1999-09-15 等离子体处理系统中腐蚀终点的确定方法和确定装置

Country Status (8)

Country Link
US (3) US6228278B1 (enExample)
EP (1) EP1118113A1 (enExample)
JP (1) JP4508423B2 (enExample)
KR (1) KR100704345B1 (enExample)
CN (1) CN1215546C (enExample)
AU (1) AU5925999A (enExample)
TW (1) TW429469B (enExample)
WO (1) WO2000019520A1 (enExample)

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US7218503B2 (en) * 1998-09-30 2007-05-15 Lam Research Corporation Method of determining the correct average bias compensation voltage during a plasma process
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US6930049B2 (en) * 2000-08-24 2005-08-16 Texas Instruments Incorporated Endpoint control for small open area by RF source parameter Vdc
US6861362B2 (en) * 2001-06-29 2005-03-01 Lam Research Corporation Self-aligned contact process implementing bias compensation etch endpoint detection and methods for implementing the same
US6837965B2 (en) * 2002-08-14 2005-01-04 Aaron D. Gustafson Method and apparatus for etch processing with end point detection thereof
US20040173469A1 (en) * 2003-03-04 2004-09-09 Ryujiro Udo Plasma processing apparatus and method for manufacturing electrostatic chuck
US7264676B2 (en) * 2003-09-11 2007-09-04 United Microelectronics Corp. Plasma apparatus and method capable of adaptive impedance matching
US8105367B2 (en) 2003-09-29 2012-01-31 Smith & Nephew, Inc. Bone plate and bone plate assemblies including polyaxial fasteners
US7115210B2 (en) * 2004-02-02 2006-10-03 International Business Machines Corporation Measurement to determine plasma leakage
US6952014B1 (en) * 2004-04-06 2005-10-04 Qualcomm Inc End-point detection for FIB circuit modification
US7595972B2 (en) * 2004-04-09 2009-09-29 Varian Semiconductor Equipment Associates, Inc. Clamp for use in processing semiconductor workpieces
DE102004030723A1 (de) * 2004-06-25 2006-02-02 VenTec Gesellschaft für Venturekapital und Unternehmensberatung mbH Mobiler, elektrostatischer Substrathalter
CN100359660C (zh) * 2005-01-27 2008-01-02 北京北方微电子基地设备工艺研究中心有限责任公司 一种等离子体刻蚀工艺的终点检测方法
CN100365788C (zh) * 2005-01-27 2008-01-30 北京北方微电子基地设备工艺研究中心有限责任公司 一种多晶硅栅刻蚀终点的检测装置
US7578301B2 (en) * 2005-03-28 2009-08-25 Lam Research Corporation Methods and apparatus for determining the endpoint of a cleaning or conditioning process in a plasma processing system
CA2616798C (en) 2005-07-25 2014-01-28 Smith & Nephew, Inc. Systems and methods for using polyaxial plates
US8382807B2 (en) 2005-07-25 2013-02-26 Smith & Nephew, Inc. Systems and methods for using polyaxial plates
US7662648B2 (en) * 2005-08-31 2010-02-16 Micron Technology, Inc. Integrated circuit inspection system
JP5094002B2 (ja) * 2005-09-06 2012-12-12 ルネサスエレクトロニクス株式会社 プラズマ処理装置およびその異常放電抑止方法
CN100344793C (zh) * 2005-11-02 2007-10-24 北京大学 一种对等离子体刻蚀进行定量监测的方法及结构
US20070122920A1 (en) * 2005-11-29 2007-05-31 Bornstein William B Method for improved control of critical dimensions of etched structures on semiconductor wafers
JP4986459B2 (ja) * 2006-01-24 2012-07-25 ルネサスエレクトロニクス株式会社 半導体集積回路装置
EP1992065B1 (de) * 2006-03-08 2011-09-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung zur nachbildung der symmetrischen und asymmetrischen impedanz einer asynchronmaschine
JP4802018B2 (ja) * 2006-03-09 2011-10-26 筑波精工株式会社 静電保持装置及びそれを用いた真空環境装置並びにアライメント装置又は貼り合わせ装置
JP5160802B2 (ja) * 2007-03-27 2013-03-13 東京エレクトロン株式会社 プラズマ処理装置
US7744691B2 (en) * 2007-04-10 2010-06-29 Calcium Silicate Corporation Energy conserving pozzolan compositions and cements incorporating same
US7864502B2 (en) * 2007-05-15 2011-01-04 International Business Machines Corporation In situ monitoring of wafer charge distribution in plasma processing
US8343305B2 (en) * 2007-09-04 2013-01-01 Lam Research Corporation Method and apparatus for diagnosing status of parts in real time in plasma processing equipment
KR100961203B1 (ko) * 2008-04-29 2010-06-09 주식회사 하이닉스반도체 스페이서 패터닝 기술을 이용한 미세 패턴 형성 방법
JP2010199429A (ja) * 2009-02-26 2010-09-09 Fujifilm Corp プラズマエッチング方法及びプラズマエッチング装置並びに液体吐出ヘッドの製造方法
US8906164B2 (en) * 2010-08-05 2014-12-09 Lam Research Corporation Methods for stabilizing contact surfaces of electrostatic chucks
CN103717179B (zh) 2011-06-15 2017-08-08 史密夫和内修有限公司 可变角度锁定植入物
US9076831B2 (en) * 2011-11-04 2015-07-07 Lam Research Corporation Substrate clamping system and method for operating the same
CN103395741B (zh) * 2013-07-31 2016-06-01 杭州士兰微电子股份有限公司 微机电工艺监控结构和监控方法
US9543225B2 (en) * 2014-04-29 2017-01-10 Lam Research Corporation Systems and methods for detecting endpoint for through-silicon via reveal applications
US20150364550A1 (en) 2014-06-16 2015-12-17 Infineon Technologies Ag Optimized layer for semiconductor
US10993750B2 (en) 2015-09-18 2021-05-04 Smith & Nephew, Inc. Bone plate

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US4473435A (en) 1983-03-23 1984-09-25 Drytek Plasma etchant mixture
US5045149A (en) 1988-10-24 1991-09-03 Vlsi Technology, Inc. Method and apparatus for end point detection
JPH0374843A (ja) * 1989-08-16 1991-03-29 Tadahiro Omi ドライエッチング装置および方法
US5013400A (en) 1990-01-30 1991-05-07 General Signal Corporation Dry etch process for forming champagne profiles, and dry etch apparatus
US5198072A (en) * 1990-07-06 1993-03-30 Vlsi Technology, Inc. Method and apparatus for detecting imminent end-point when etching dielectric layers in a plasma etch system
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US5308414A (en) 1992-12-23 1994-05-03 International Business Machines Corporation Method and apparatus for optical emission end point detection in plasma etching processes
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JP3306677B2 (ja) * 1993-05-12 2002-07-24 東京エレクトロン株式会社 自己バイアス測定方法及び装置並びに静電吸着装置
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US6101971A (en) * 1998-05-13 2000-08-15 Axcelis Technologies, Inc. Ion implantation control using charge collection, optical emission spectroscopy and mass analysis

Also Published As

Publication number Publication date
US6228278B1 (en) 2001-05-08
CN1439173A (zh) 2003-08-27
KR20010075508A (ko) 2001-08-09
US20030183335A1 (en) 2003-10-02
KR100704345B1 (ko) 2007-04-05
US6562187B2 (en) 2003-05-13
US20010004921A1 (en) 2001-06-28
TW429469B (en) 2001-04-11
AU5925999A (en) 2000-04-17
WO2000019520A1 (en) 2000-04-06
JP2002526924A (ja) 2002-08-20
EP1118113A1 (en) 2001-07-25
JP4508423B2 (ja) 2010-07-21

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Granted publication date: 20050817

Termination date: 20160915