CN121444613A - 半导体装置 - Google Patents

半导体装置

Info

Publication number
CN121444613A
CN121444613A CN202480044319.6A CN202480044319A CN121444613A CN 121444613 A CN121444613 A CN 121444613A CN 202480044319 A CN202480044319 A CN 202480044319A CN 121444613 A CN121444613 A CN 121444613A
Authority
CN
China
Prior art keywords
region
semiconductor
small
type
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202480044319.6A
Other languages
English (en)
Chinese (zh)
Inventor
具灿淳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Publication of CN121444613A publication Critical patent/CN121444613A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies

Landscapes

  • Electrodes Of Semiconductors (AREA)
CN202480044319.6A 2024-01-10 2024-11-26 半导体装置 Pending CN121444613A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2024-002082 2024-01-10
JP2024002082 2024-01-10
PCT/JP2024/041892 WO2025150283A1 (ja) 2024-01-10 2024-11-26 半導体装置

Publications (1)

Publication Number Publication Date
CN121444613A true CN121444613A (zh) 2026-01-30

Family

ID=96386553

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202480044319.6A Pending CN121444613A (zh) 2024-01-10 2024-11-26 半导体装置

Country Status (3)

Country Link
JP (1) JPWO2025150283A1 (https=)
CN (1) CN121444613A (https=)
WO (1) WO2025150283A1 (https=)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9825128B2 (en) * 2015-10-20 2017-11-21 Maxpower Semiconductor, Inc. Vertical power transistor with thin bottom emitter layer and dopants implanted in trenches in shield area and termination rings
JP6673174B2 (ja) * 2016-12-12 2020-03-25 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP7635524B2 (ja) * 2020-09-08 2025-02-26 富士電機株式会社 半導体装置および半導体装置の製造方法

Also Published As

Publication number Publication date
WO2025150283A1 (ja) 2025-07-17
JPWO2025150283A1 (https=) 2025-07-17

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