JPWO2025150283A1 - - Google Patents
Info
- Publication number
- JPWO2025150283A1 JPWO2025150283A1 JP2025569292A JP2025569292A JPWO2025150283A1 JP WO2025150283 A1 JPWO2025150283 A1 JP WO2025150283A1 JP 2025569292 A JP2025569292 A JP 2025569292A JP 2025569292 A JP2025569292 A JP 2025569292A JP WO2025150283 A1 JPWO2025150283 A1 JP WO2025150283A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024002082 | 2024-01-10 | ||
| PCT/JP2024/041892 WO2025150283A1 (ja) | 2024-01-10 | 2024-11-26 | 半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2025150283A1 true JPWO2025150283A1 (https=) | 2025-07-17 |
Family
ID=96386553
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025569292A Pending JPWO2025150283A1 (https=) | 2024-01-10 | 2024-11-26 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPWO2025150283A1 (https=) |
| CN (1) | CN121444613A (https=) |
| WO (1) | WO2025150283A1 (https=) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9825128B2 (en) * | 2015-10-20 | 2017-11-21 | Maxpower Semiconductor, Inc. | Vertical power transistor with thin bottom emitter layer and dopants implanted in trenches in shield area and termination rings |
| JP6673174B2 (ja) * | 2016-12-12 | 2020-03-25 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
| JP7635524B2 (ja) * | 2020-09-08 | 2025-02-26 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
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2024
- 2024-11-26 JP JP2025569292A patent/JPWO2025150283A1/ja active Pending
- 2024-11-26 CN CN202480044319.6A patent/CN121444613A/zh active Pending
- 2024-11-26 WO PCT/JP2024/041892 patent/WO2025150283A1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN121444613A (zh) | 2026-01-30 |
| WO2025150283A1 (ja) | 2025-07-17 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20251226 |