CN121219834A - 半导体装置以及半导体装置的制造方法 - Google Patents

半导体装置以及半导体装置的制造方法

Info

Publication number
CN121219834A
CN121219834A CN202380098296.2A CN202380098296A CN121219834A CN 121219834 A CN121219834 A CN 121219834A CN 202380098296 A CN202380098296 A CN 202380098296A CN 121219834 A CN121219834 A CN 121219834A
Authority
CN
China
Prior art keywords
layer
semiconductor device
gold
plating
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380098296.2A
Other languages
English (en)
Chinese (zh)
Inventor
奥畑亮
西泽弘一郎
森田智之
德久智明
清水寿和
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN121219834A publication Critical patent/CN121219834A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
CN202380098296.2A 2023-05-29 2023-05-29 半导体装置以及半导体装置的制造方法 Pending CN121219834A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2023/019866 WO2024247025A1 (ja) 2023-05-29 2023-05-29 半導体装置および半導体装置の製造方法

Publications (1)

Publication Number Publication Date
CN121219834A true CN121219834A (zh) 2025-12-26

Family

ID=88729163

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380098296.2A Pending CN121219834A (zh) 2023-05-29 2023-05-29 半导体装置以及半导体装置的制造方法

Country Status (3)

Country Link
JP (1) JP7378693B1 (https=)
CN (1) CN121219834A (https=)
WO (1) WO2024247025A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025109755A1 (ja) * 2023-11-24 2025-05-30 三菱電機株式会社 半導体装置およびその製造方法
CN121076034B (zh) * 2025-11-04 2026-03-10 深圳市联合蓝海应用材料科技股份有限公司 一种化合物半导体背孔器件及其制备方法和晶体管

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02214127A (ja) * 1989-02-15 1990-08-27 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2803408B2 (ja) * 1991-10-03 1998-09-24 三菱電機株式会社 半導体装置
TWI504780B (zh) * 2009-09-04 2015-10-21 穩懋半導體股份有限公司 一種利用無電解電鍍法將金屬種子層鍍在半導體晶片的背面及導孔的製程方法
JP5725073B2 (ja) * 2012-10-30 2015-05-27 三菱電機株式会社 半導体素子の製造方法、半導体素子
JP2022070436A (ja) * 2020-10-27 2022-05-13 富士通株式会社 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JPWO2024247025A1 (https=) 2024-12-05
JP7378693B1 (ja) 2023-11-13
WO2024247025A1 (ja) 2024-12-05

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