CN120981899A - 绝缘膜形成材料、半导体装置的制造方法及半导体装置 - Google Patents

绝缘膜形成材料、半导体装置的制造方法及半导体装置

Info

Publication number
CN120981899A
CN120981899A CN202480026473.0A CN202480026473A CN120981899A CN 120981899 A CN120981899 A CN 120981899A CN 202480026473 A CN202480026473 A CN 202480026473A CN 120981899 A CN120981899 A CN 120981899A
Authority
CN
China
Prior art keywords
insulating film
forming material
film forming
electrode
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202480026473.0A
Other languages
English (en)
Chinese (zh)
Inventor
足立宪哉
米田聪
松川大作
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Actri Microsystems Co ltd
Original Assignee
Actri Microsystems Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Actri Microsystems Co ltd filed Critical Actri Microsystems Co ltd
Publication of CN120981899A publication Critical patent/CN120981899A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F290/00—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
    • C08F290/08—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated side groups
    • C08F290/14—Polymers provided for in subclass C08G
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F299/00—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers
    • C08F299/02—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Formation Of Insulating Films (AREA)
CN202480026473.0A 2023-04-19 2024-04-19 绝缘膜形成材料、半导体装置的制造方法及半导体装置 Pending CN120981899A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023068850 2023-04-19
JP2023-068850 2023-04-19
PCT/JP2024/015649 WO2024219502A1 (ja) 2023-04-19 2024-04-19 絶縁膜形成材料、半導体装置の製造方法及び半導体装置

Publications (1)

Publication Number Publication Date
CN120981899A true CN120981899A (zh) 2025-11-18

Family

ID=93152953

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202480026473.0A Pending CN120981899A (zh) 2023-04-19 2024-04-19 绝缘膜形成材料、半导体装置的制造方法及半导体装置

Country Status (5)

Country Link
JP (1) JPWO2024219502A1 (https=)
KR (1) KR20260005243A (https=)
CN (1) CN120981899A (https=)
TW (1) TW202510124A (https=)
WO (1) WO2024219502A1 (https=)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4868183B2 (ja) * 2008-09-30 2012-02-01 日産化学工業株式会社 新規なフッ素化テトラカルボン酸二無水物、これより得られるポリイミド前駆体、ポリイミドとその利用
JPWO2015118836A1 (ja) * 2014-02-10 2017-03-23 日立化成デュポンマイクロシステムズ株式会社 ポリイミド前駆体を含む樹脂組成物、硬化膜の製造方法及び電子部品
JP7238271B2 (ja) 2018-05-21 2023-03-14 住友ベークライト株式会社 電子装置、及び電子装置の製造方法
JP7378949B2 (ja) * 2019-03-29 2023-11-14 日鉄ケミカル＆マテリアル株式会社 ポリイミドフィルムの製法
WO2022070362A1 (ja) * 2020-09-30 2022-04-07 昭和電工マテリアルズ株式会社 樹脂組成物、半導体装置の製造方法、硬化物及び半導体装置
WO2022201497A1 (ja) * 2021-03-26 2022-09-29 昭和電工マテリアルズ株式会社 半導体装置の製造方法、半導体装置、集積回路要素、及び、集積回路要素の製造方法
CN117203746A (zh) * 2021-04-28 2023-12-08 富士胶片株式会社 接合体的制造方法、半导体器件的制造方法及树脂组合物
TW202307090A (zh) * 2021-05-17 2023-02-16 日商富士軟片股份有限公司 含聚醯亞胺部形成用組成物、接合體之製造方法、接合體、器件之製造方法及器件
WO2023022179A1 (ja) * 2021-08-20 2023-02-23 アオイ電子株式会社 半導体モジュールおよびその製造方法、電子装置、電子モジュール、ならびに電子装置の製造方法
JP2023039804A (ja) * 2021-09-09 2023-03-22 Ｈｄマイクロシステムズ株式会社 樹脂組成物、半導体装置の製造方法、硬化物及び半導体装置

Also Published As

Publication number Publication date
TW202510124A (zh) 2025-03-01
WO2024219502A1 (ja) 2024-10-24
JPWO2024219502A1 (https=) 2024-10-24
KR20260005243A (ko) 2026-01-09

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