CN120937526A - 半导体装置 - Google Patents

半导体装置

Info

Publication number
CN120937526A
CN120937526A CN202480020670.1A CN202480020670A CN120937526A CN 120937526 A CN120937526 A CN 120937526A CN 202480020670 A CN202480020670 A CN 202480020670A CN 120937526 A CN120937526 A CN 120937526A
Authority
CN
China
Prior art keywords
electrode
region
flr
film
trench
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202480020670.1A
Other languages
English (en)
Chinese (zh)
Inventor
大井信敬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of CN120937526A publication Critical patent/CN120937526A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/415—Insulated-gate bipolar transistors [IGBT] having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
CN202480020670.1A 2023-03-30 2024-03-07 半导体装置 Pending CN120937526A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023056392 2023-03-30
JP2023-056392 2023-03-30
PCT/JP2024/008808 WO2024203120A1 (ja) 2023-03-30 2024-03-07 半導体装置

Publications (1)

Publication Number Publication Date
CN120937526A true CN120937526A (zh) 2025-11-11

Family

ID=92905631

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202480020670.1A Pending CN120937526A (zh) 2023-03-30 2024-03-07 半导体装置

Country Status (4)

Country Link
US (1) US20260020294A1 (https=)
JP (1) JPWO2024203120A1 (https=)
CN (1) CN120937526A (https=)
WO (1) WO2024203120A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5188037B2 (ja) * 2006-06-20 2013-04-24 株式会社東芝 半導体装置
JP5205856B2 (ja) * 2007-01-11 2013-06-05 富士電機株式会社 電力用半導体素子
JP2009289904A (ja) * 2008-05-28 2009-12-10 Toshiba Corp 半導体装置
JP6091395B2 (ja) * 2013-10-07 2017-03-08 三菱電機株式会社 半導体装置およびその製造方法
EP3084833B1 (en) * 2013-12-16 2017-09-13 ABB Schweiz AG Edge termination for semiconductor devices and corresponding fabrication method
CN106409884B (zh) * 2016-11-07 2019-06-28 株洲中车时代电气股份有限公司 一种功率半导体器件终端结构

Also Published As

Publication number Publication date
JPWO2024203120A1 (https=) 2024-10-03
US20260020294A1 (en) 2026-01-15
WO2024203120A1 (ja) 2024-10-03

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