CN120770208A - 存储元件 - Google Patents

存储元件

Info

Publication number
CN120770208A
CN120770208A CN202480015462.2A CN202480015462A CN120770208A CN 120770208 A CN120770208 A CN 120770208A CN 202480015462 A CN202480015462 A CN 202480015462A CN 120770208 A CN120770208 A CN 120770208A
Authority
CN
China
Prior art keywords
layer
ferromagnetic
memory element
antiferromagnetic
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202480015462.2A
Other languages
English (en)
Chinese (zh)
Inventor
大森广之
肥后友也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Topology Logic Co ltd
Original Assignee
Topology Logic Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Topology Logic Co ltd filed Critical Topology Logic Co ltd
Publication of CN120770208A publication Critical patent/CN120770208A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/18—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
CN202480015462.2A 2023-03-01 2024-03-01 存储元件 Pending CN120770208A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2023-030767 2023-03-01
JP2023030767 2023-03-01
JP2023-080454 2023-05-15
JP2023080454 2023-05-15
PCT/JP2024/007787 WO2024181561A1 (ja) 2023-03-01 2024-03-01 メモリ素子

Publications (1)

Publication Number Publication Date
CN120770208A true CN120770208A (zh) 2025-10-10

Family

ID=92590005

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202480015462.2A Pending CN120770208A (zh) 2023-03-01 2024-03-01 存储元件

Country Status (4)

Country Link
EP (1) EP4676184A1 (https=)
JP (1) JPWO2024181561A1 (https=)
CN (1) CN120770208A (https=)
WO (1) WO2024181561A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010067520A1 (ja) 2008-12-10 2010-06-17 株式会社日立製作所 磁気抵抗効果素子、それを用いた磁気メモリセル及び磁気ランダムアクセスメモリ
US20190304525A1 (en) * 2018-04-02 2019-10-03 Intel Corporation Magnetic memory with chiral antiferromagnetic material for magnet switching
WO2019230352A1 (ja) * 2018-05-31 2019-12-05 Tdk株式会社 スピン軌道トルク型磁気抵抗効果素子及び磁気メモリ
US11508903B2 (en) * 2018-06-28 2022-11-22 Intel Corporation Spin orbit torque device with insertion layer between spin orbit torque electrode and free layer for improved performance
WO2020166722A1 (ja) * 2019-02-15 2020-08-20 国立大学法人東京大学 スピントロニクス素子及び磁気メモリ装置

Also Published As

Publication number Publication date
EP4676184A1 (en) 2026-01-07
JPWO2024181561A1 (https=) 2024-09-06
WO2024181561A1 (ja) 2024-09-06

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