JPWO2024181561A1 - - Google Patents
Info
- Publication number
- JPWO2024181561A1 JPWO2024181561A1 JP2025504008A JP2025504008A JPWO2024181561A1 JP WO2024181561 A1 JPWO2024181561 A1 JP WO2024181561A1 JP 2025504008 A JP2025504008 A JP 2025504008A JP 2025504008 A JP2025504008 A JP 2025504008A JP WO2024181561 A1 JPWO2024181561 A1 JP WO2024181561A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/18—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using Hall-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Materials of the active region
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023030767 | 2023-03-01 | ||
| JP2023080454 | 2023-05-15 | ||
| PCT/JP2024/007787 WO2024181561A1 (ja) | 2023-03-01 | 2024-03-01 | メモリ素子 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2024181561A1 true JPWO2024181561A1 (https=) | 2024-09-06 |
Family
ID=92590005
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025504008A Pending JPWO2024181561A1 (https=) | 2023-03-01 | 2024-03-01 |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP4676184A1 (https=) |
| JP (1) | JPWO2024181561A1 (https=) |
| CN (1) | CN120770208A (https=) |
| WO (1) | WO2024181561A1 (https=) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010067520A1 (ja) | 2008-12-10 | 2010-06-17 | 株式会社日立製作所 | 磁気抵抗効果素子、それを用いた磁気メモリセル及び磁気ランダムアクセスメモリ |
| US20190304525A1 (en) * | 2018-04-02 | 2019-10-03 | Intel Corporation | Magnetic memory with chiral antiferromagnetic material for magnet switching |
| WO2019230352A1 (ja) * | 2018-05-31 | 2019-12-05 | Tdk株式会社 | スピン軌道トルク型磁気抵抗効果素子及び磁気メモリ |
| US11508903B2 (en) * | 2018-06-28 | 2022-11-22 | Intel Corporation | Spin orbit torque device with insertion layer between spin orbit torque electrode and free layer for improved performance |
| WO2020166722A1 (ja) * | 2019-02-15 | 2020-08-20 | 国立大学法人東京大学 | スピントロニクス素子及び磁気メモリ装置 |
-
2024
- 2024-03-01 WO PCT/JP2024/007787 patent/WO2024181561A1/ja not_active Ceased
- 2024-03-01 CN CN202480015462.2A patent/CN120770208A/zh active Pending
- 2024-03-01 EP EP24764038.6A patent/EP4676184A1/en active Pending
- 2024-03-01 JP JP2025504008A patent/JPWO2024181561A1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP4676184A1 (en) | 2026-01-07 |
| CN120770208A (zh) | 2025-10-10 |
| WO2024181561A1 (ja) | 2024-09-06 |