CN119896059A - 存储装置 - Google Patents
存储装置 Download PDFInfo
- Publication number
- CN119896059A CN119896059A CN202380065238.XA CN202380065238A CN119896059A CN 119896059 A CN119896059 A CN 119896059A CN 202380065238 A CN202380065238 A CN 202380065238A CN 119896059 A CN119896059 A CN 119896059A
- Authority
- CN
- China
- Prior art keywords
- insulator
- conductor
- oxide
- transistor
- oxide semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Landscapes
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022-147574 | 2022-09-16 | ||
| JP2022147574 | 2022-09-16 | ||
| PCT/IB2023/058971 WO2024057167A1 (ja) | 2022-09-16 | 2023-09-11 | 記憶装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN119896059A true CN119896059A (zh) | 2025-04-25 |
Family
ID=90274456
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202380065238.XA Pending CN119896059A (zh) | 2022-09-16 | 2023-09-11 | 存储装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20250374513A1 (https=) |
| JP (1) | JPWO2024057167A1 (https=) |
| KR (1) | KR20250071946A (https=) |
| CN (1) | CN119896059A (https=) |
| WO (1) | WO2024057167A1 (https=) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI685113B (zh) * | 2015-02-11 | 2020-02-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| JP2019047101A (ja) * | 2017-09-05 | 2019-03-22 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| US11289475B2 (en) * | 2019-01-25 | 2022-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of semiconductor device |
| CN114424339A (zh) | 2019-09-20 | 2022-04-29 | 株式会社半导体能源研究所 | 半导体装置及半导体装置的制造方法 |
-
2023
- 2023-09-11 US US19/107,667 patent/US20250374513A1/en active Pending
- 2023-09-11 CN CN202380065238.XA patent/CN119896059A/zh active Pending
- 2023-09-11 KR KR1020257010768A patent/KR20250071946A/ko active Pending
- 2023-09-11 WO PCT/IB2023/058971 patent/WO2024057167A1/ja not_active Ceased
- 2023-09-11 JP JP2024546513A patent/JPWO2024057167A1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US20250374513A1 (en) | 2025-12-04 |
| KR20250071946A (ko) | 2025-05-22 |
| JPWO2024057167A1 (https=) | 2024-03-21 |
| WO2024057167A1 (ja) | 2024-03-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |