CN119895531A - 用于形成半导体装置的衬底、半导体层叠结构体、半导体装置、用于形成半导体装置的衬底的制造方法、半导体层叠结构体的制造方法以及半导体装置的制造方法 - Google Patents

用于形成半导体装置的衬底、半导体层叠结构体、半导体装置、用于形成半导体装置的衬底的制造方法、半导体层叠结构体的制造方法以及半导体装置的制造方法 Download PDF

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Publication number
CN119895531A
CN119895531A CN202380065244.5A CN202380065244A CN119895531A CN 119895531 A CN119895531 A CN 119895531A CN 202380065244 A CN202380065244 A CN 202380065244A CN 119895531 A CN119895531 A CN 119895531A
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CN
China
Prior art keywords
silicon carbide
semiconductor device
semiconductor
substrate
layer
Prior art date
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Pending
Application number
CN202380065244.5A
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English (en)
Chinese (zh)
Inventor
重川直辉
梁剑波
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Public University Legal Person Osaka
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Public University Legal Person Osaka
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Publication of CN119895531A publication Critical patent/CN119895531A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3208—Silicon carbide
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/8303—Diamond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2903—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Recrystallisation Techniques (AREA)
CN202380065244.5A 2022-09-12 2023-09-12 用于形成半导体装置的衬底、半导体层叠结构体、半导体装置、用于形成半导体装置的衬底的制造方法、半导体层叠结构体的制造方法以及半导体装置的制造方法 Pending CN119895531A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022144364 2022-09-12
JP2022-144364 2022-09-12
PCT/JP2023/033217 WO2024058180A1 (ja) 2022-09-12 2023-09-12 半導体装置形成用基板、半導体積層構造体、半導体装置、半導体装置形成用基板の製造方法、半導体積層構造体の製造方法及び半導体装置の製造方法

Publications (1)

Publication Number Publication Date
CN119895531A true CN119895531A (zh) 2025-04-25

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CN202380065244.5A Pending CN119895531A (zh) 2022-09-12 2023-09-12 用于形成半导体装置的衬底、半导体层叠结构体、半导体装置、用于形成半导体装置的衬底的制造方法、半导体层叠结构体的制造方法以及半导体装置的制造方法

Country Status (4)

Country Link
US (1) US20260096168A1 (https=)
JP (1) JPWO2024058180A1 (https=)
CN (1) CN119895531A (https=)
WO (1) WO2024058180A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025243391A1 (ja) * 2024-05-21 2025-11-27 三菱電機株式会社 半導体装置および半導体装置の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7646025B1 (en) * 2007-05-31 2010-01-12 Chien-Min Sung Diamond LED devices and associated methods
GB201222352D0 (en) * 2012-12-12 2013-01-23 Element Six Ltd Substrates for semiconductor devices
JP2016139655A (ja) * 2015-01-26 2016-08-04 富士通株式会社 半導体装置及び半導体装置の製造方法
GB201509766D0 (en) * 2015-06-05 2015-07-22 Element Six Technologies Ltd Method of fabricating diamond-semiconductor composite substrates
JP6772711B2 (ja) * 2016-09-20 2020-10-21 住友電気工業株式会社 半導体積層構造体および半導体デバイス
JP7061747B2 (ja) * 2017-07-10 2022-05-02 株式会社タムラ製作所 半導体基板、半導体素子、及び半導体基板の製造方法
JP7205233B2 (ja) * 2019-01-04 2023-01-17 富士通株式会社 半導体装置、半導体装置の製造方法及び基板接合方法
JP7295351B1 (ja) * 2021-09-22 2023-06-20 日本碍子株式会社 支持基板と１３族元素窒化物結晶基板との貼り合わせ基板

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JPWO2024058180A1 (https=) 2024-03-21
US20260096168A1 (en) 2026-04-02
WO2024058180A1 (ja) 2024-03-21

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