CN1195262A - 在电路上形成金属接点的工艺 - Google Patents

在电路上形成金属接点的工艺 Download PDF

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CN1195262A
CN1195262A CN97129750A CN97129750A CN1195262A CN 1195262 A CN1195262 A CN 1195262A CN 97129750 A CN97129750 A CN 97129750A CN 97129750 A CN97129750 A CN 97129750A CN 1195262 A CN1195262 A CN 1195262A
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乔瑞斯·皮特斯
安·阿凯特
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Alcatel Lucent SAS
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Abstract

一种在印刷电路板(PCB)上形成金属接点或柱的方法。用该方法获得的柱由连续3层金属(CU1、CU2、CU3或镍)构成,其中至少前两层由铜构成。这样形成接点的高度,足以用倒装芯片技术把芯片装配在印刷电路板上。利用电镀(电流镀)或电化学镀技术可实现本方法。

Description

在电路上形成金属接点的方法
本发明涉及在电路上形成至少一个接点的方法。
虽然以前没有专门地预备它,但是,这种方法特别适用已知的“倒装片”技术,该技术中利用所谓的“接点”(stand-off)把几个高密度电子芯片装配到印刷电路板上面。该接点是金属柱或突起,除了把芯片连接到电路板上以外,还在它们之间形成间距。由于通常由硅构成的芯片和载体,即印刷电路板的温度膨胀系数不同,该间距是减少互连中疲劳效应所必需的,特别在装配过程中,可以显著地不损坏金属柱。
在现有技术中,如称为“控制熔塌芯片连接”或“C4”技术的IBMTM技术,已经公开了在芯片上形成接点或柱的方法。在该技术中,通过钼掩模利用蒸发技术制造该柱。这种公知技术涉及相对昂贵的硅背端处理方法,此外需要高成本的掩模材料。例如,在1993年11月16在美国专利No.5,261,593公开了把倒装片电连接到印刷电路基板的一种方法,而且,在1994年9月20在美国专利No.5,349,500公开了一种装置。
在公知的技术中,在芯片上设置接点,即由芯片提供者设置接点。由于在相同的印刷电路板上通常装配几种不同的芯片,处理这些芯片需要形成多种掩模,使产量相对降低。而且由不同的芯片提供者重复至少部分的这些“突起”的加工方法。所有这些因素导致倒装芯片技术生产成本的增加。
本发明的目的是减少操作芯片的数量,从而显著地减少倒装片装配的生产成本。
按照本发明,由于在印刷电路板表面上形成所述接点来达到该目的,该印刷电路板包括所述电路,并且由第1层铜涂覆,所述方法包括下述主要连续的步骤:至少在所述第1层铜的预定部分镀上第2层铜,至少在所述第2层铜各部分上面镀上第3层金属层。
用这种方法,由相互层叠的3层金属构成接点位于印刷电路板表面上,即在倒装片技术情况,是在载体表面上,而不是在芯片表面上构成接点。仅用一个印刷电路板的单个背端方法代替几个芯片的单独处理来减少装配的成本。换句话说,不采用与不同芯片有关的不同突起技术来减少“突起”方法的成本。并且,“非熔化”接点的制造,即由回流焊接期间不熔化的金属构成,在装配后,能良好控制芯片和印刷电路板之间的接点高度。
更详细地说,所述的方法包括下列步骤:
淀积第1层光阻材料,覆盖所述的第1铜层;
至少在以后形成接点的位置,形成不覆盖所述第1铜层的第1图形;
在所述第1铜层的未覆盖部分,电镀所述第2铜层,所述第2铜层显著地厚于所述第1铜层。
由此,在印刷电路板表面形成由两层铜构成的接点。但是,对于某些应用,这些接点的高度不足以形成上述接点。
为弥补所述不足,利用电镀或电化学镀覆技术,可以进一步实现本发明的方法。
另一方面,利用电镀也称为电流镀(galvano-plating)技术的情况,本发明的方法还包括下述步骤:
淀积第2层光阻材料层;
至少在所述以后要形成的接点位置,形成不覆盖所述第2层铜的第2图形;
在所述第2铜层没覆盖的部分上涂镀所述第3金属层。
利用这种方法,形成由3层连续铜层构成的相对高的金属接点。
利用下述步骤,可进一步完成本电镀方法:
用第2金属保护层涂镀所述第3金属层;
剥离所述第1和第2光阻材料层;
腐蚀没保护的金属层直到除掉没保护的第1铜层;
剥离所述的第2金属保护层。
由于第2铜层相对于第1铜层具有较厚的厚度,所以在所谓差别腐蚀步骤的上一个腐蚀步骤,除掉了第1铜层的整个没保护的部分,而只稍微影响第2铜层的没保护部分的厚度。
应该注意,所述第3层金属最好为铜。
最后,通过下述步骤来完成本方法,电化学镀一层镍到没保护的铜层上的步骤,再薄镀一层金到所述的镍层上面的步骤。
另一方面,在利用电化学镀技术时,完成本发明的上述方法还包括下述步骤:
用第2金属保护层涂镀所述第2铜层;
剥离所述第1层光阻材料;
腐蚀没保护的第1铜层;
剥离所述第2金属保护层;
淀积光敏电介质材料层;
在所述要形成金属接点的位置,除掉光敏电介质材料层,形成第2图形;
在所述第2铜层没保护的位置电镀第3金属层。
用这种方法,形成由3层连续层构成的相对高的金属接点。
在本电化学镀方法的第1实施例中,所述第3层金属是铜。
该方法还包括下列步骤,利用所述光敏电介质材料作为掩模,把一层镍电化学镀到所述接点上。
在本电化学镀方法的第2实施例中,所述第3层金属是镍。
然后,通过下述步骤完成电化学镀方法,即利用所述光敏电介质材料层作为掩模,薄镀一层金到所述镍层上。
由此,形成良好的电接触端或焊盘。
在上述方法中,所述保护层的第2金属,最好为锡-铝。
本技术可应用到非常大面积的基板上,即应用于不同尺寸的印刷电路板上,在一次设计和制造方法中,可以组合几种不同倒装芯片输入/输出(I/O)部分。它还能接纳大多数标准的可买到芯片的组装中。
通过下面结合附图对实施例的叙述,本发明的上述和其它目的及特征会变得显而易见,并且更好地理解本发明:
图1到图3表示按照本发明的电镀和电化学镀方法的公共步骤;
图4到图6表示电镀方法的进一步的步骤;
图7到图10表示电化学镀方法的进一步的步骤。
利用图1到图10所示的方法,形成位于印刷电路板表面上的金属突起或者接点,以便实现倒装片组装。
上述各图表示具有孔的印刷电路板PCB的横截面部分。如图1所示,用铜Cu1底层涂覆印刷电路板PCB的上下表面。下述方法步骤,要在电路板PCB上面获得导电的铜通路,突起的接点和电镀的通孔的最佳组合,使外部输入/输出(I/O)端连到倒装芯片上的接点,称为“连接柱”。
在下述部分,说明形成金属接点和电镀通孔的两种可能技术。按照第一种技术的连续的方法步骤,被称为电或电(流)镀技术,表示在图1到图6中,而按照第2种技术的连续方法步骤,被称为电化学镀技术,表示在图1至图3和图7到图10中。图1到图3是表示这两种技术的公共部分,在下面对其只说明一次。
本发明的第1步是淀积第1层光阻材料PR1覆盖PCB两侧的铜底层Cu1。按照现有技术中众所周知的技术,用光阻材料PR1形成图形,因此在下文不用更详细地说明。图2表示在层PR1上面形成图形后的电路板。
本方法的另外步骤是在底层或第1铜层Cu1的没覆盖部分,利用已构图的层PR1作为掩模,电镀第2铜层Cu2。第2铜层Cu2具有基本上大于第1铜层Cu1的厚度。第2铜层Cu2不仅淀积在没覆盖Cu1的部分,也淀积在穿过印刷电路板PCB的通孔中,如图3所示。
目前上述的两种技术不同。下面从这步骤开始解释关于电镀或电(流)镀的技术,以及电化学镀的技术。
在电镀技术中,接着的步骤是在器件上面淀积第2层光阻材料PR2,如图3所示。然后在第2光阻层PR2上面形成图形,在要形成接点的位置,留下没覆盖的部分铜Cu2。本方法的另外步骤是在这些没覆盖的Cu2部分上电镀第3层铜Cu3。并且,利用第2构图的层PR2作为掩模,在层Cu3的顶部,淀积锡-铅SnPb保护金属层。结果如图4所示。
然后,剥离两层光阻材料层PR1和PR2。其后,腐蚀铜层CU1和CU3的没保护部分,直到从电路板PCB除掉没覆盖的CU1层的部分,如图5所示。
在利用锡-铅层SnPb作为掩模差别地腐蚀铜层CU1和CU2后,两铜层CU1和CU2剩下的总厚度是大约35μm。
最后剥掉锡-铅SnPb保护金属层,形成由三个连续铜层CU1、CU2和CU3构成的高接点,如图6所示。金属接点的高度是在50到75μm之间。
通过在其上电化学镀较薄的镍保护层,涂覆又一个没保护的铜CU2和CU3层。通过在镍保护层顶面薄镀金层,则可实现优良的电接触。最后的电镀步骤的结果在图中没有表示。
这样完成了电镀技术。
在电化学镀中,图7表示图3所示的步骤的下一步骤,包括利用已构图的光阻层PR1作为掩模,在层CU2顶面淀积锡-铅SnPb保护金属层。用现有技术中公知的电镀方法,淀积保护层SnPb。
然后剥掉光阻层PR1,利用SnPb层作为掩模,腐蚀掉保留的铜CU1底层的没覆盖的部分。结果如图8所示。
接着的步骤是剥离保护金属层SnPb。然后,在整个器件上淀积光敏电介质材料层MP,如图9所示。例如,利用公知的“幕涂”技术,可以进行上述的淀积,例如,由“Shipley”公司的“multiposit”TM材料构成电介质层MP。淀积光敏电介质材料MP层,而不淀积光阻层的原因是后者对以后要进行的镍-金淀积不抗蚀。
如图9所示,在电介质层MP中形成图形。通过在以后要形成接点的位置,除掉光敏电介质材料MP层,利用光刻的方法,由该图形限定接点的位置。
按照第1实施方案,把第3铜CU3层电镀到第2铜层CU2没覆盖的部分。这样,形成由3个连续的铜层CU1、CU2、CU3构成的高接点。
对于上述的电镀技术,可以利用在其上电化学镀的较薄镍Ni保护层涂镀第3铜层CU3。该电镀方法利用电介质层MP作为掩模。通过在Ni镍层上面薄镀或电镀金来完成该方法。此时又以电介质层MP作为掩模。金属Au的厚度是大约0.1μm,利用它可改善芯片和接点之间的电接触。
按照另一实施方案,图中没有表示,把较厚的镍层电镀到第2铜层CU2的没覆盖的部分。这样形成的接点由两个铜层CU1、CU2和厚的镍层构成。用金层再覆盖镍层,以便提供良好的电接触。应当注意,利用电介质层MP作为掩模淀积镍和金层,并且,最好按照薄电镀技术淀积金层。
上面已经结合具体的装置叙述了本发明的原理,应当明白,所作的叙述只是举例说明,而不是对发明保护范围的限制。

Claims (13)

1.在电路上至少形成一个接点的方法,其特征是,在印刷电路板(PCB)表面上形成所述的接点,该电路板包括所述电路并且涂镀第1铜(CU1)层,所述方法包括下述主要的连续步骤:至少把第2铜(CU2)层镀到所述第1铜(CU1)层的预定部分,把第3层金属(CU3,Ni)镀到至少所述第2铜(CU2)层部分的顶面上。
2.按照权利要求1的方法,其特征是,所述方法包括下列步骤:
淀积第1光阻材料(PR1)层,覆盖所述第1铜(CU1)层;
至少在要形成接点的位置,形成没覆盖所述第1铜(CU1)层的第1图形;
在所述第1铜(CU1)层没覆盖的部分上电镀所述第2铜(CU2)层,所述第2铜(CU2)层基本上厚于所述第1铜(CU1)层。
3.按照权利要求2的方法,其特征是所述方法还包括下列步骤:
淀积第2光阻材料(PR2)层;
至少在所述要形成接点的位置,形成没覆盖所述第2铜层(CU2)的第2图形;
在所述第2铜(CU2)层没覆盖的部分,电镀所述第3金属(CU3)层。
4.按照权利要求3的方法,其特征是,所述方法还包括下列步骤:
用第2金属(SnPb)保护层涂镀所述第3金属(CU3)层;
剥离光阻材料的所述第1(PR1)和第2(PR2)层;
腐蚀没保护的金属层直到除掉没保护的第1铜(CU1)层;
剥掉第2金属(SnPb)所述的保护层。
5.按照权利要求4的方法,其特征是,所述第3层金属是铜(CU3)。
6.按照权利要求5的方法,其特征是,还包括电化学镀一层镍到没保护的铜(CU2、CU3)层上的步骤。
7.按照权利要求6的方法,其特征是,还包括把一层金薄电镀到所述镍层上的步骤。
8.按照权利要求2的方法,其特征是,所述方法还包括下列步骤:
用第2金属(SnPb)保护层涂镀所述第2铜(CU2)层;
剥离光阻材料的所述第1层(PR1);
腐蚀没保护的第1铜层(CU1);
剥离所述第2金属(SnPb)的保护层;
淀积光敏电介质材料(MP)层;
在所述要形成金属接点的位置,形成除掉所述光敏电介质材料(MP)层的第2图形;
在所述第2铜(CU2)层没覆盖部分,电镀所述第3金属(CU3、Ni)层。
9.按照权利要求8的方法,其特征是,所述第3层金属是铜(CU3)。
10.按照权利要求9的方法,其特征是还包括下述步骤,利用所述的光敏电介质材料(MP)层作为掩模,在所述接点上电化学镀一层镍(Ni)。
11.按照权利要求8的方法,其特征是,所述第3层的金属是镍(Ni)。
12.按照权利要求10或者11中任何一个方法,其特征是还包括下述步骤,利用所述光敏电介质材料(MP)层作为掩模,在所述镍(Ni)层上薄镀一层金(Au)。
13.按照权利要求4或8中任一个的方法,其特征是,所述保护层(SnPb)的第2金属是锡-铅。
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