CN119384882A - 电子部件 - Google Patents

电子部件 Download PDF

Info

Publication number
CN119384882A
CN119384882A CN202380046805.7A CN202380046805A CN119384882A CN 119384882 A CN119384882 A CN 119384882A CN 202380046805 A CN202380046805 A CN 202380046805A CN 119384882 A CN119384882 A CN 119384882A
Authority
CN
China
Prior art keywords
conductors
substrate
electronic component
conductor
planar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380046805.7A
Other languages
English (en)
Chinese (zh)
Inventor
水野孝昭
中矶俊幸
丰岛健司
吉冈由雅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Publication of CN119384882A publication Critical patent/CN119384882A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/497—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H10W20/496—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/498—Resistive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Coils Or Transformers For Communication (AREA)
CN202380046805.7A 2022-06-30 2023-06-27 电子部件 Pending CN119384882A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022-105968 2022-06-30
JP2022105968 2022-06-30
PCT/JP2023/023730 WO2024004985A1 (ja) 2022-06-30 2023-06-27 電子部品

Publications (1)

Publication Number Publication Date
CN119384882A true CN119384882A (zh) 2025-01-28

Family

ID=89383083

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380046805.7A Pending CN119384882A (zh) 2022-06-30 2023-06-27 电子部件

Country Status (4)

Country Link
US (1) US20250118659A1 (https=)
JP (1) JPWO2024004985A1 (https=)
CN (1) CN119384882A (https=)
WO (1) WO2024004985A1 (https=)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5070317A (en) * 1989-01-17 1991-12-03 Bhagat Jayant K Miniature inductor for integrated circuits and devices
JP2001223334A (ja) * 2000-02-09 2001-08-17 Toshiba Corp 半導体装置製造方法および半導体装置
JP2004103756A (ja) * 2002-09-09 2004-04-02 Tdk Corp コイル部品およびその製造方法
CN101460964B (zh) * 2006-06-01 2011-09-21 株式会社村田制作所 无线ic器件和无线ic器件用复合元件
US9954267B2 (en) * 2015-12-28 2018-04-24 Qualcomm Incorporated Multiplexer design using a 2D passive on glass filter integrated with a 3D through glass via filter
WO2017210814A1 (zh) * 2016-06-06 2017-12-14 华为技术有限公司 互感耦合滤波器及无线保真WiFi模组
JP2021197454A (ja) * 2020-06-15 2021-12-27 イビデン株式会社 配線基板及び配線基板の製造方法
WO2022097492A1 (ja) * 2020-11-06 2022-05-12 株式会社村田製作所 フィルタ装置およびそれを搭載した高周波フロントエンド回路

Also Published As

Publication number Publication date
US20250118659A1 (en) 2025-04-10
WO2024004985A1 (ja) 2024-01-04
JPWO2024004985A1 (https=) 2024-01-04

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